TWI785987B - 電漿處理裝置的檢查方法 - Google Patents

電漿處理裝置的檢查方法 Download PDF

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Publication number
TWI785987B
TWI785987B TW111105412A TW111105412A TWI785987B TW I785987 B TWI785987 B TW I785987B TW 111105412 A TW111105412 A TW 111105412A TW 111105412 A TW111105412 A TW 111105412A TW I785987 B TWI785987 B TW I785987B
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TW
Taiwan
Prior art keywords
chamber
unit
gas
inspection
pressure
Prior art date
Application number
TW111105412A
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English (en)
Chinese (zh)
Other versions
TW202238770A (zh
Inventor
吉森大晃
嘉瀬慶久
中澤和輝
Original Assignee
日商芝浦機械電子裝置股份有限公司
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Publication of TW202238770A publication Critical patent/TW202238770A/zh
Application granted granted Critical
Publication of TWI785987B publication Critical patent/TWI785987B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
TW111105412A 2021-03-23 2022-02-15 電漿處理裝置的檢查方法 TWI785987B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021048143A JP7366952B2 (ja) 2021-03-23 2021-03-23 プラズマ処理装置の検査方法
JP2021-048143 2021-03-23

Publications (2)

Publication Number Publication Date
TW202238770A TW202238770A (zh) 2022-10-01
TWI785987B true TWI785987B (zh) 2022-12-01

Family

ID=83324551

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111105412A TWI785987B (zh) 2021-03-23 2022-02-15 電漿處理裝置的檢查方法

Country Status (4)

Country Link
JP (1) JP7366952B2 (ja)
KR (1) KR102690175B1 (ja)
CN (1) CN115116874A (ja)
TW (1) TWI785987B (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040240971A1 (en) * 2003-06-02 2004-12-02 Tokyo Electron Limited Substrate processing apparatus and substrate transferring method
US20060191877A1 (en) * 2005-02-28 2006-08-31 Tokyo Electron Limited Plasma processing method and post-processing method
US20080031710A1 (en) * 2006-08-01 2008-02-07 Tokyo Electron Limited Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
US20200083070A1 (en) * 2018-03-20 2020-03-12 Tokyo Electron Limited Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
JP3676983B2 (ja) * 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
JP2003017478A (ja) * 2001-07-05 2003-01-17 Tokyo Electron Ltd 真空処理装置および真空処理方法
JP3947100B2 (ja) * 2002-12-20 2007-07-18 株式会社フィズケミックス 多層膜処理装置及び多層膜処理方法
JP2006179528A (ja) * 2004-12-20 2006-07-06 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
JP5224567B2 (ja) * 2005-11-21 2013-07-03 株式会社日立国際電気 基板処理装置、基板処理方法および半導体装置の製造方法
JP2007186757A (ja) * 2006-01-13 2007-07-26 Tokyo Electron Ltd 真空処理装置及び真空処理方法
JP4789821B2 (ja) * 2007-02-05 2011-10-12 東京エレクトロン株式会社 基板処理装置の検査方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040240971A1 (en) * 2003-06-02 2004-12-02 Tokyo Electron Limited Substrate processing apparatus and substrate transferring method
US20060191877A1 (en) * 2005-02-28 2006-08-31 Tokyo Electron Limited Plasma processing method and post-processing method
US20080031710A1 (en) * 2006-08-01 2008-02-07 Tokyo Electron Limited Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
US20200083070A1 (en) * 2018-03-20 2020-03-12 Tokyo Electron Limited Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same

Also Published As

Publication number Publication date
JP2022147049A (ja) 2022-10-06
TW202238770A (zh) 2022-10-01
KR20220132436A (ko) 2022-09-30
CN115116874A (zh) 2022-09-27
KR102690175B1 (ko) 2024-07-30
JP7366952B2 (ja) 2023-10-23

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