TWI785987B - Inspection method of plasma treatment equipment - Google Patents
Inspection method of plasma treatment equipment Download PDFInfo
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- TWI785987B TWI785987B TW111105412A TW111105412A TWI785987B TW I785987 B TWI785987 B TW I785987B TW 111105412 A TW111105412 A TW 111105412A TW 111105412 A TW111105412 A TW 111105412A TW I785987 B TWI785987 B TW I785987B
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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Abstract
本發明提供一種可準確地進行檢查用晶圓上的粒子的測定的電漿處理裝置的檢查方法。實施方式的電漿處理裝置的檢查方法包括:利用搬送部從第二腔室向第一腔室搬送檢查用晶圓的步驟;在利用所述搬送部進行的所述檢查用晶圓向所述第一腔室的搬送結束後,向所述第二腔室的內部供給氣體的步驟;在所述第一腔室內對所述檢查用晶圓進行電漿處理的步驟;利用所述搬送部從所述第一腔室向所述第二腔室搬送檢查用晶圓的步驟;在利用所述搬送部進行的所述檢查用晶圓向所述第二腔室的搬送結束後,向所述第二腔室的內部供給所述氣體的步驟;以及對附著於從所述第二腔室搬出的所述檢查用晶圓的粒子進行測定的步驟。The present invention provides an inspection method of a plasma processing apparatus capable of accurately measuring particles on an inspection wafer. The inspection method of the plasma processing apparatus according to the embodiment includes: using a transfer unit to transfer the inspection wafer from the second chamber to the first chamber; After the transfer in the first chamber is completed, a step of supplying gas to the inside of the second chamber; a step of performing plasma processing on the inspection wafer in the first chamber; A step of transferring the inspection wafer to the second chamber from the first chamber; after the transfer of the inspection wafer to the second chamber by the transfer unit is completed, a step of supplying the gas into the second chamber; and a step of measuring particles adhering to the inspection wafer carried out from the second chamber.
Description
本發明的實施方式關於一種電漿處理裝置的檢查方法。Embodiments of the present invention relate to an inspection method of a plasma processing device.
利用電漿的乾燥製程例如是在製造微細結構體時被運用。例如,在半導體裝置、平板顯示器、光罩等的製造中,進行蝕刻處理、灰化處理、損害的去除等各種電漿處理。The drying process using plasma is used, for example, in the manufacture of microstructures. For example, in the manufacture of semiconductor devices, flat panel displays, and photomasks, various plasma treatments such as etching, ashing, and damage removal are performed.
在進行此種電漿處理的電漿處理裝置例如設置有對處理物實施電漿處理的製程腔室、經由閘閥與製程腔室連接的傳輸腔室(transfer chamber)、設置於傳輸腔室的內部且在與製程腔室之間搬送處理物的搬送機械手等。另外,為了將傳輸腔室內維持為減壓氣體環境,有時也設置經由閘閥與傳輸腔室連接的加載互鎖腔室。The plasma treatment device for performing such plasma treatment is provided with, for example, a process chamber for performing plasma treatment on the object to be processed, a transfer chamber connected to the process chamber through a gate valve, and a transfer chamber installed inside the transfer chamber. And the transfer manipulator that transfers the processed objects between the process chamber and the like. In addition, in order to maintain the pressure-reduced gas atmosphere inside the transfer chamber, a load-lock chamber connected to the transfer chamber via a gate valve may also be provided.
在所述電漿處理裝置中,在製程腔室內進行電漿處理。若反覆進行電漿處理,則有產生源自透過電漿處理而生成的反應生成物的粒子之虞。若所產生的粒子落下至處理物的表面而附著於處理物的表面,則導致成品率的下降。In the plasma treatment device, plasma treatment is performed in a process chamber. When the plasma treatment is repeated, particles derived from the reaction product produced by the plasma treatment may be generated. When the generated particles fall to the surface of the object to be processed and adhere to the surface of the object to be processed, the yield will decrease.
另外,粒子未必僅在製程腔室內產生。例如,透過傳輸腔室內的搬送機械手的動作而產生,或者在從外部空間將處理物搬入至加載互鎖腔室內時混入,或者還透過將腔室彼此連接的閘閥的開閉動作而產生。Additionally, particles are not necessarily generated only within the process chamber. For example, it is generated by the action of the transfer robot in the transfer chamber, or it is mixed in when the processed objects are carried into the load lock chamber from the external space, or it is generated by the opening and closing of the gate valves connecting the chambers.
因此,需要在對處理物進行處理之前確認是否產生粒子後開始處理。或者,在判明了因粒子引起的不良的產生的情況下,需要查明粒子在哪個腔室內產生。 因此,對於處理室內的狀態的檢查,已知有以下方法:將與製品用晶圓不同的檢查用晶圓搬送至作為檢查對象的處理室來實施處理,對所述檢查用晶圓上的粒子進行測定,由此來檢查處理室內的狀態(例如,參照專利文獻1)。 Therefore, it is necessary to start the treatment after confirming whether or not particles are generated before treating the treated object. Alternatively, when it is found that a defect due to particles has occurred, it is necessary to find out in which chamber the particles are generated. Therefore, for the inspection of the state in the processing chamber, there is known a method in which an inspection wafer different from the product wafer is transported to the processing chamber as the inspection object, and the particles on the inspection wafer are processed. Measurement is performed to check the state of the processing chamber (for example, refer to Patent Document 1).
但是,在檢查腔室內的狀態時,有時無法準確地進行檢查用晶圓上的粒子的測定。 因此,期望開發出一種在檢查腔室內的狀態時,可準確地進行檢查用晶圓上的粒子的測定的技術。 [現有技術文獻] [專利文獻] However, when the state in the inspection chamber is inspected, it may not be possible to accurately measure the particles on the inspection wafer. Therefore, it is desired to develop a technology capable of accurately measuring particles on an inspection wafer when inspecting the state in the chamber. [Prior art literature] [Patent Document]
[專利文獻1] 日本專利特開2006-179528號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-179528
[發明所要解決的問題] 本發明所要解決的問題在於,提供一種在檢查腔室內的狀態時,可準確地進行檢查用晶圓上的粒子的測定的電漿處理裝置的檢查方法。 [Problem to be Solved by the Invention] The problem to be solved by the present invention is to provide an inspection method of a plasma processing apparatus that can accurately measure particles on an inspection wafer when inspecting the state in a chamber.
[解決問題的技術手段] 實施方式的電漿處理裝置的檢查方法是以下電漿處理裝置的檢查方法,所述電漿處理裝置包括:第一腔室,維持較大氣壓經減壓的氣體環境,能夠在內部載置處理物;第一排氣部,能夠將所述第一腔室的內部減壓至規定壓力;電漿產生部,能夠產生所述電漿;第一氣體供給部,能夠向所述第一腔室的內部且為產生所述電漿的區域供給製程氣體;第二腔室,經由閘閥與所述第一腔室連接,能夠維持較大氣壓經減壓的氣體環境;搬送部,設置於所述第二腔室的內部,能夠在與所述第一腔室之間搬送所述處理物;第二排氣部,能夠將所述第二腔室的內部減壓至規定壓力;第二氣體供給部,能夠向所述第二腔室的內部供給氣體;以及控制器,能夠對所述搬送部、所述第二排氣部、及所述第二氣體供給部進行控制。所述電漿處理裝置的檢查方法包括第一粒子測定步驟,所述第一粒子測定步驟包括:在利用所述搬送部進行檢查用晶圓從所述第二腔室向所述第一腔室的搬送時,控制所述第二排氣部,以使所述第二腔室內部的壓力成為與所述第一腔室內部的壓力大致同等的步驟;在利用所述搬送部進行的所述檢查用晶圓向所述第一腔室的搬送結束時,控制所述第二氣體供給部,而向所述第二腔室的內部供給所述氣體的步驟;在搬入了所述檢查用晶圓的所述第一腔室內進行電漿處理的步驟;在利用所述搬送部進行檢查用晶圓從所述第一腔室向所述第二腔室的搬送時,控制所述第二排氣部,以使所述第二腔室內部的壓力成為與所述第一腔室內部的壓力大致同等的步驟;在利用所述搬送部進行的所述檢查用晶圓向所述第二腔室的搬送結束時,控制所述第二氣體供給部,而向所述第二腔室的內部供給所述氣體的步驟;以及對附著於從所述第二腔室搬出的所述檢查用晶圓的粒子進行測定的步驟。 [Technical means to solve the problem] The inspection method of the plasma processing apparatus according to the embodiment is an inspection method of the plasma processing apparatus including: a first chamber, which maintains a relatively high pressure decompressed gas environment, and can place a processing object inside. The first exhaust part can depressurize the inside of the first chamber to a predetermined pressure; the plasma generation part can generate the plasma; the first gas supply part can supply the gas to the first chamber. The process gas is supplied inside and for the region where the plasma is generated; the second chamber is connected to the first chamber through a gate valve, and can maintain a relatively high pressure decompressed gas environment; the conveying part is arranged in the second chamber. The interior of the chamber is capable of transporting the object to be processed between the first chamber and the second exhaust unit, which is capable of depressurizing the interior of the second chamber to a predetermined pressure; the second gas supply unit, A gas can be supplied to the inside of the second chamber; and a controller can control the conveyance unit, the second exhaust unit, and the second gas supply unit. The inspection method of the plasma processing apparatus includes a first particle measurement step including: carrying out inspection wafers from the second chamber to the first chamber by the transfer unit. During the conveyance of the second chamber, the step of controlling the second exhaust unit so that the pressure inside the second chamber becomes substantially equal to the pressure inside the first chamber; a step of controlling the second gas supply unit to supply the gas into the second chamber when the transfer of the inspection wafer to the first chamber is completed; a step of performing plasma processing in the first chamber; when the inspection wafer is transferred from the first chamber to the second chamber by the transfer unit, controlling the second row an air part, a step of making the pressure inside the second chamber substantially equal to the pressure inside the first chamber; when the transfer of the chamber is completed, controlling the second gas supply unit to supply the gas into the second chamber; Round particles are measured in steps.
[發明的效果] 根據本發明的實施方式,提供一種在檢查腔室內的狀態時,可準確地進行檢查用晶圓上的粒子的測定的電漿處理裝置的檢查方法。 [Effect of the invention] According to an embodiment of the present invention, there is provided an inspection method of a plasma processing apparatus capable of accurately measuring particles on an inspection wafer when inspecting a state in a chamber.
圖1是用於例示本實施方式的電漿處理裝置1的佈局圖。
關於電漿處理裝置1的各部的詳細情況,將如後述。
首先,本發明者等人透過使用電漿處理裝置1的實驗,查明了以下情況。
即,本發明者等人確認了所述電漿處理裝置1的內部有無粒子。更具體而言,本發明者等人使用檢查用晶圓100a對加載互鎖部5、處理部6及交接部7的各內部的粒子進行了測定。
FIG. 1 is a layout diagram illustrating a
於是,在交接部7的內部附著於檢查用晶圓100a的粒子的數量有時比在處理部6的內部附著於檢查用晶圓100a的粒子的數量多。通常,在處理部6中附著的粒子的數量變多。在測定處理部6內部的粒子的情況下,檢查用晶圓100a需要透過交接部7的內部。即,在交接部7的內部產生了粒子的情況下,粒子也應該附著於用於測定處理部6內部的粒子的檢查用晶圓100a。Therefore, the number of particles adhering to the inspection wafer 100 a inside the
因此,本發明者等人還進行了多次交接部7內部的粒子的測定。於是,查明了附著於檢查用晶圓100a的粒子的數量有時較處理部6增加,有時不增加,有時無法準確地進行粒子的測定。Therefore, the inventors of the present invention also performed the measurement of the particles inside the
本發明者對所附著的粒子的數量增加的檢查用晶圓100a進行了努力調查。於是,查明了在檢查用晶圓100a的表面形成有水痕。即,水痕被識別為粒子,並被計數。在查明粒子在何處產生時,若水痕被誤認為粒子,則無法準確地確定產生粒子的部位。或者,有執行不需要維護的部位的維護,而使裝置的生產性下降之虞。The inventors of the present invention have diligently investigated the
因此,本發明者等人對水痕的成分進行了調查。於是查明了水痕的成分主要是C
16H
30O
4。對所述C
16H
30O
4進行了努力調查,結果判明了是用於防止氣體流入至加載互鎖部5、處理部6及交接部7的各內部的密封構件的成分。
Therefore, the inventors of the present invention investigated the components of water marks. Then it was found out that the main component of the water mark was C 16 H 30 O 4 . As a result of diligent investigation of the above-mentioned C 16 H 30 O 4 , it was found that it is a component of a sealing member for preventing gas from flowing into each of the load-
圖2是C 16H 30O 4的蒸氣壓曲線。 C 16H 30O 4是較多地包含在O形環等密封構件中的成分。 另外,圖2中的點B1、點B2是測定值,圖2中的虛線是基於點B1、點B2的近似曲線。 Figure 2 is the vapor pressure curve of C 16 H 30 O 4 . C 16 H 30 O 4 is a component contained in a large amount in sealing members such as O-rings. Note that points B1 and B2 in FIG. 2 are measured values, and dotted lines in FIG. 2 are approximate curves based on points B1 and B2.
在蒸氣壓曲線的下側的區域中,C
16H
30O
4的成分容易蒸發,在蒸氣壓曲線的上側的區域中,C
16H
30O
4的成分不易蒸發。例如,若交接部7內部的溫度設為50℃,則在交接部7內部的壓力的值為比圖2的蒸氣壓曲線與50℃的刻度線交叉的壓力的值低的值的情況下,C
16H
30O
4的成分容易蒸發。相反,在交接部7內部的壓力值為比圖2的蒸氣壓曲線與交接部7內部的溫度的刻度線交叉的壓力的值高的值的情況下,C
16H
30O
4的成分不易蒸發。
In the region on the lower side of the vapor pressure curve, the components of C 16 H 30 O 4 are easily evaporated, and in the region on the upper side of the vapor pressure curve, the components of C 16 H 30 O 4 are not easily evaporated. For example, if the temperature inside the
即,在進行交接部7的粒子測定的情況下,若使交接部7內部的壓力處於蒸氣壓曲線的上側的區域,則可抑制密封構件的成分的釋放。That is, when the particle measurement of the
且說,處理部6的內部暴露於電漿,因此處理部6有時從80℃加熱至100℃左右。在如上所述那樣的情況下,交接部7與處理部6連接,因此交接部7的溫度也上升至50℃~70℃左右。In other words, since the inside of the
根據圖2的蒸氣壓曲線,在將處理物100搬送至處理部6的內部之後,若將交接部7內部的壓力設為5×10
-3Pa以上,則即便交接部7的溫度成為50℃左右,也可抑制C
16H
30O
4的成分蒸發。
According to the vapor pressure curve in FIG. 2 , after the object to be processed 100 is transported to the inside of the
但是,根據電漿處理的種類或處理條件等不同,可能產生交接部7的溫度進一步變高的情況。
本發明者等人進行研究的結果獲得以下第一見解:若將交接部7內部的壓力設為1×10
-1Pa以上,則即便電漿處理的種類或處理條件等發生了變化,也可幾乎消除C
16H
30O
4的成分的蒸發。
However, depending on the type of plasma treatment, treatment conditions, etc., the temperature of the
且說,處理部6中使用的密封構件與交接部7中使用的密封構件相同。另外,處理部6內部的壓力在實施電漿處理以外的期間,維持為密封構件的成分能夠產生蒸發的壓力。因此,密封構件的成分蒸發而釋放至處理部6的內部,從而有附著於處理物100之虞。但是,發明人進行了努力調查,結果與在處理部6的內部污染物(所蒸發的密封構件的成分)附著的機率相比,在交接部7的內部污染物附著的機率高。In other words, the sealing member used in the
本發明者等人進行研究的結果考慮為其原因在於:為了實施電漿處理而向處理部6的內部導入製程氣體,因此污染物(所蒸發的密封構件的成分)與製程氣體一起從處理部6的內部排出。即,獲得以下第二見解:即便將交接部7內部的壓力設為密封構件的成分能夠蒸發的壓力以下,透過向交接部7的內部導入氣體,也可抑制污染物(所蒸發的密封構件的成分)附著於處理物100。As a result of research by the inventors of the present invention, it is considered that the reason for this is that the process gas is introduced into the
本來,如上所述,為了抑制密封構件的成分的釋放,較佳為在搬送中交接部7內部的壓力也成為包含在蒸氣壓曲線的上側的區域中的壓力。但是,在處理部6中對處理物100進行電漿處理的情況下,為了消除殘留氣體的影響,在處理部6內部的壓力成為1×10
-3Pa~5×10
-3Pa之間的壓力後導入製程氣體。在將處理物100搬送至處理部6時,在交接部7內部的壓力成為包含在蒸氣壓曲線的上側的區域中的壓力(例如,1×10
-1Pa)的情況下,氣體從交接部7流入至處理部6,處理部6的壓力上升至與交接部7內部的壓力為相同程度。
Originally, as described above, in order to suppress the release of components of the sealing member, it is preferable that the pressure inside the
若處理部6的壓力上升至與包含在蒸氣壓曲線的上側的區域的壓力為相同程度,則等待壓力下降至規定值的時間變長,處理部6的處理時間變長。另外,由於交接部7內部的壓力與處理部6內部的壓力的差壓,也有在處理部6的內部粒子飛揚之虞。因此,在交接部7與處理部6之間進行處理物100的交接時,將交接部7的壓力暫時設為包含在蒸氣壓曲線的下側的區域中的壓力。When the pressure of the
本發明者等人根據所述第一見解及第二見解發現:若在處理物100的搬送前後,使交接部7內部的壓力處於蒸氣壓曲線的上側的區域,則在抑制密封構件的成分的釋放的同時,可抑制污染物(所蒸發的密封構件的成分)附著於處理物100。The inventors of the present invention have found from the above-mentioned first and second findings that if the pressure inside the
在進行電漿處理裝置1的檢查的情況下,較佳為在與利用電漿處理裝置1實際對處理物100進行處理相同的條件下進行檢查。本發明者等人根據第一見解及第二見解發現準確地進行粒子的測定的檢查方法,從而完成了本發明。When performing the inspection of the
以下,參照附圖對本發明的實施方式進行例示。此外,在各附圖中,對相同的構成元件標注相同的符號,並適宜省略詳細的說明。Hereinafter, embodiments of the present invention will be illustrated with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same component, and detailed description is abbreviate|omitted suitably.
圖1是用於例示本實施方式的電漿處理裝置1的佈局圖。如圖1所示,電漿處理裝置1例如包括:控制器2、收納部3、搬送部4、加載互鎖部5、處理部6、及交接部7。FIG. 1 is a layout diagram illustrating a
控制器2例如包括中央處理器(Central Processing Unit,CPU)等運算部、以及存儲器等存儲部。控制器2例如為計算機等。控制器2例如基於保存於存儲部中的控制程序來對設置於電漿處理裝置1的各元件的動作進行控制。The
收納部3例如將處理物100收納為層疊狀(多級狀)。收納部3例如是所謂的吊艙或作為正面開口式載體的前開式統一吊艙(Front-Opening Unified Pod,FOUP)等。但是,收納部3並不限定於例示,只要可收納處理物100即可。收納部3可設置至少一個。The
搬送部4設置於收納部3與加載互鎖部5之間。搬送部4進行收納部3與加載互鎖部5之間的處理物100的搬送與交接。在此情況下,搬送部4在比實施電漿處理時的壓力高的壓力(例如,大氣壓)的環境下,進行處理物100的搬送與交接。搬送部4例如是具有保持處理物100的臂的搬送機械手。The
加載互鎖部5設置於搬送部4與交接部7之間。加載互鎖部5在氣體環境的壓力不同的搬送部4與交接部7之間進行處理物100的交接。因此,加載互鎖部5包括腔室51、排氣部52、及氣體供給部53。The load-
腔室51具有能夠維持較大氣壓經減壓的氣體環境的氣密結構。在腔室51的側壁設置有用於進行處理物100的搬入與搬出的開口。另外,設置有使開口開閉的閘閥51a。腔室51經由閘閥51a連接於交接部7的腔室71(相當於第二腔室的一例)。The
排氣部52對腔室51的內部進行排氣,以使腔室51內部的壓力的到達真空度成為與交接部7的腔室71內部的壓力大致同等。排氣部52例如可包括渦輪分子泵(Turbo Molecular Pump,TMP)、以及壓力控制部(自動壓力控制器(Auto Pressure Controller,APC))等。此外,所謂到達真空度大致同等,是腔室51內部與腔室71內部的壓力的到達真空度之差為5×10
-2Pa以內。
The
氣體供給部53向腔室51的內部供給氣體,以使腔室51內部的壓力成為與搬送部4的壓力大致同等。所供給的氣體例如可設為空氣或氮氣等。The
處理部6在較大氣壓經減壓的氣體環境下,對處理物100實施電漿處理。
處理部6例如可設為電漿蝕刻裝置、電漿灰化裝置、濺射裝置、電漿化學氣相沉積(Chemical Vapor Deposition,CVD)裝置等電漿處理裝置。
在此情況下,電漿的產生方法並無特別限定,例如可設為使用高頻或微波等產生電漿。
但是,電漿處理裝置的種類或電漿產生方法並不限定於例示。即,處理部6只要在較大氣壓經減壓的氣體環境下對處理物100實施電漿處理即可。
The
另外,處理部6的數量也並無特別限定。處理部6只要設置至少一個即可。在設置多個處理部6的情況下,可設置相同種類的電漿處理裝置,也可設置不同種類的電漿處理裝置。另外,在設置多個相同種類的電漿處理裝置的情況下,處理條件可分別不同,處理條件也可分別相同。In addition, the number of
圖3是用於例示處理部6的一例的示意剖面圖。
圖3中進行例示的處理部6是電感耦合電漿處理裝置。即,為使用由高頻能量激發、產生的電漿P從製程氣體G生成電漿生成物,進行處理物100的處理的電漿處理裝置的一例。
FIG. 3 is a schematic cross-sectional view illustrating an example of the
如圖3所示,處理部6例如包括:腔室61(相當於第一腔室的一例)、載置部62、天線63、高頻電源64a、高頻電源64b、氣體供給部65(相當於第一氣體供給部的一例)、排氣部66(相當於第一排氣部的一例)等。As shown in FIG. 3 , the
腔室61例如呈有底的大致圓筒形狀,且具有能夠維持較大氣壓經減壓的氣體環境的氣密結構。在腔室61的上部,以成為氣密的方式設置有透射窗61a。透射窗61a呈板狀,可由對高頻能量的透射率高且在進行電漿處理時不易被蝕刻的材料形成。透射窗61a例如可由石英等介電體材料形成。The
在腔室61的側壁設置有用於進行處理物100的搬入與搬出的開口61b。另外,設置有使開口61b開閉的閘閥61c。腔室61經由閘閥61c連接於交接部7的腔室71。An
載置部62設置於腔室61的內部。在載置部62的上表面載置處理物100。在此情況下,處理物100可直接載置於載置部62的上表面,也可經由未圖示的支撐構件等載置於載置部62。另外,在載置部62可設置靜電卡盤等保持裝置。The
天線63向腔室61內部的產生電漿P的區域供給高頻能量(電磁能量)。利用供給至腔室61的內部的高頻能量而產生電漿P。例如,天線63經由透射窗61a向腔室61的內部供給高頻能量。The
高頻電源64a經由匹配器64a1電連接於天線63。在匹配器64a1,設置有用於在高頻電源64a側的阻抗與電漿P側的阻抗之間取得匹配的匹配電路等。高頻電源64a是用於產生電漿P的電源。即,高頻電源64a是為了在腔室61的內部產生高頻放電而產生電漿P而設置。高頻電源64a向天線63施加具有100 KHz~100 MHz左右的頻率的高頻電力。
在本實施方式中,天線63及高頻電源64a成為產生電漿P的電漿產生部。
The high-
高頻電源64b經由匹配器64b1電連接於載置部62。在匹配器64b1,設置有用於在高頻電源64b側的阻抗與電漿P側的阻抗之間取得匹配的匹配電路等。高頻電源64b對引入至載置於載置部62的處理物100中的離子的能量進行控制。高頻電源64b向載置部62施加具有適於引入離子的比較低的頻率(例如,13.56 MHz以下)的高頻電力。The high-
氣體供給部65經由流量控制部65a向腔室61內部的產生電漿P的區域供給製程氣體G。流量控制部65a例如可設為質量流量控制器(Mass Flow Controller,MFC)等。氣體供給部65例如可連接於腔室61的側壁且為透射窗61a的附近。The
製程氣體G是根據處理的種類或處理物100的處理面的材料等而適宜選擇。例如,在蝕刻處理的情況下,可設為CF 4或CF 3等包含氟原子的製程氣體G,以便生成反應性高的自由基。在此情況下,製程氣體G例如可設為僅包含氟原子的氣體,也可設為包含氟原子的氣體與稀有氣體的混合氣體。 The process gas G is appropriately selected according to the type of processing, the material of the processing surface of the object to be processed 100 , and the like. For example, in the case of etching, the process gas G containing fluorine atoms such as CF 4 or CF 3 may be used to generate highly reactive radicals. In this case, the process gas G may be, for example, a gas containing only fluorine atoms, or a mixed gas of a gas containing fluorine atoms and a rare gas.
排氣部66將腔室61的內部減壓至規定壓力。排氣部66例如可設為渦輪分子泵(TMP)。排氣部66可經由壓力控制部66a連接於腔室61的底面。壓力控制部66a基於檢測腔室61內部的壓力的未圖示的壓力計的輸出進行控制,以使腔室61的內部成為規定壓力。壓力控制部66a例如可設為自動壓力控制器(APC:Auto Pressure Controller)等。The
在對處理物100實施電漿處理時,利用排氣部66將腔室61的內部減壓至規定壓力,從氣體供給部65向腔室61內部的產生電漿P的區域供給規定量的製程氣體G(例如,CF
4等)。另一方面,從高頻電源64a向天線63施加規定功率的高頻電力,電磁能量經由透射窗61a放射至腔室61的內部。另外,從高頻電源64b向載置處理物100的載置部62施加規定功率的高頻電力,形成加速從電漿P朝向處理物100的離子的電場。
When plasma processing is performed on the
透過放射至腔室61的內部的電磁能量而產生電漿P,透過所產生的電漿P,製程氣體G被激發、活化而生成中性活性種、離子等電漿生成物。然後,透過將所述所生成的電漿生成物供給至處理物100,對處理物100實施電漿處理。The plasma P is generated by the electromagnetic energy radiated into the
此外,以上,作為處理部的一例,對感應耦合電漿(Inductively Coupled Plasma,ICP)處理裝置進行了說明,但處理部並不限定於這些電漿處理裝置。例如,處理部也可為電容耦合型電漿(Capacitively Coupled Plasma,CCP)處理裝置(例如,平行平板型(反應離子蝕刻(Reactive Ion Etching,RIE))裝置)等。或者,也可為微波激發型的電漿處理裝置(例如,遠程電漿裝置(化學乾式蝕刻(Chemical Dry Etching,CDE)裝置)、表面波電漿(Surface Wave Plasma,SWP)裝置等。此外,可對其他電漿處理裝置的基本結構應用已知的技術,因此省略詳細的說明。In addition, although the inductively coupled plasma (Inductively Coupled Plasma, ICP) processing apparatus was demonstrated as an example of a processing part above, a processing part is not limited to these plasma processing apparatuses. For example, the processing part may be a capacitively coupled plasma (Capacitively Coupled Plasma, CCP) processing device (for example, a parallel plate type (Reactive Ion Etching (RIE)) device) or the like. Alternatively, it may also be a microwave-excited plasma treatment device (for example, a remote plasma device (Chemical Dry Etching (CDE) device), a surface wave plasma (Surface Wave Plasma, SWP) device, etc. In addition, Known techniques can be applied to the basic structure of other plasma processing apparatuses, and thus detailed descriptions are omitted.
接著,對交接部7進行說明。
如圖1所示,交接部7設置於處理部6與加載互鎖部5之間。交接部7進行處理部6與加載互鎖部5之間的處理物100的交接。
Next, the
圖4是用於例示交接部7的示意剖面圖。
此外,圖4是圖1中的交接部7的A-A線剖面圖。
如圖4所示,交接部7包括:腔室71、搬送部72、排氣部73(相當於第二排氣部的一例)、及氣體供給部74(相當於第二氣體供給部的一例)。
FIG. 4 is a schematic cross-sectional view for illustrating the
腔室71具有能夠維持較大氣壓經減壓的氣體環境的氣密結構。腔室71經由閘閥61c與腔室61連接。The
搬送部72設置於腔室71的內部。搬送部72在處理部6與加載互鎖部5之間進行處理物100的交接。例如,搬送部72在與處理部6的腔室61之間搬送(搬入、搬出)處理物100。搬送部72例如可設為具有保持處理物100的臂的搬送機械手(例如,多關節機械手)。The
排氣部73將腔室71的內部減壓至規定壓力。排氣部73例如可經由壓力控制部66a連接於腔室71的底面。
排氣部73例如可設為與上文所述的排氣部66相同。
壓力控制部66a基於檢測腔室71內部的壓力的未圖示的壓力計的輸出進行控制,以使腔室71內部的壓力成為規定壓力。
The
此處,如上所述,在電漿處理中使用的製程氣體G中,例如有如包含氟原子的氣體那樣反應性高的氣體。若反應性高的氣體從處理部6的腔室61的內部流向交接部7的腔室71的內部,則有反應性高的氣體與露出至腔室71的內部的元件反應而產生污染物之虞。Here, as described above, the process gas G used in the plasma treatment includes, for example, a highly reactive gas such as a gas containing fluorine atoms. When the highly reactive gas flows from the interior of the
另外,有時在電漿處理時產生的副產物附著於處理部6的腔室61的內壁或露出至腔室61的內部的元件上。因此,若形成從處理部6的腔室61的內部朝向交接部7的腔室71的內部流動的氣流,則有從處理部6的腔室61的內壁等剝離的副產物隨著氣流而侵入至交接部7的腔室71的內部之虞。侵入至交接部7的腔室71的內部的副產物成為對處理物100的污染物。In addition, by-products generated during plasma processing may adhere to the inner wall of the
因此,在對處理部6的腔室61搬入處理物100,或者從處理部6的腔室61搬出處理物100時,排氣部73與安裝於腔室71的壓力控制部66a協同動作,以使腔室71內部的壓力成為與處理部6的腔室61內部的壓力大致同等。例如,處理部6的腔室61內部的壓力可設為1×10
-3Pa~1×10
-2Pa左右。
Therefore, when the processed
在此情況下,所謂交接部7的腔室71內部的壓力與處理部6的腔室61內部的壓力大致同等,是指使腔室71內部的壓力處於自與腔室61內部的壓力相同的壓力至比與腔室61內部的壓力相同的壓力高5×10
-2Pa的壓力的範圍。若如此,則可有效果地抑制反應性高的氣體或副產物侵入至交接部7的腔室71的內部。
In this case, the pressure inside the
此外,若使腔室71內部的壓力過高,則由於從腔室71朝向處理部6的腔室61的氣流,而有附著於腔室61的內壁的副產物剝離,或者副產物浮游於腔室61的內部之虞。因此,在從處理部6進行處理物100的搬入及搬出時,腔室71內部的壓力較佳為設為8×10
-3Pa~5×10
-2Pa左右。此外,交接部7的腔室71內部的壓力被決定為在所述壓力範圍內,比處理部6的腔室61內部的壓力稍高。
In addition, if the pressure inside the
腔室71的壓力控制可利用排氣部73與壓力控制部66a進行,但難以迅速地增加變低的壓力。
因此,如圖4所示,在本實施方式的交接部7設置有氣體供給部74。
氣體供給部74經由流量控制部74a向腔室71的內部供給氣體G1。流量控制部74a例如可設為質量流量控制器(MFC)等。
The pressure control of the
氣體G1例如可設為不易與處理物100或露出至腔室71的內部的元件反應的氣體。例如,氣體G1可設為氮氣、氬氣等稀有氣體或者它們的混合氣體等。The gas G1 may be, for example, a gas that does not easily react with the object to be processed 100 or elements exposed to the inside of the
另外,氣體G1是為了控制腔室71內部的壓力而供給,壓力的控制量也小,因此供給至腔室71的內部的氣體G1的量少。例如,氣體G1的流量為10 sccm以上、1000 sccm以下。In addition, the gas G1 is supplied to control the pressure inside the
處理物100從收納部3經由加載互鎖部5及交接部7被搬送至處理部6的內部。被搬送至處理部6的內部的處理物100被進行電漿處理。經電漿處理的處理物100經由加載互鎖部5及交接部7返回至收納部3。然後,下一個處理物100同樣地被進行電漿處理。透過電漿處理裝置1進行所述動作,處理物100的處理推進。The processed
且說,若反覆進行電漿處理,則有產生源自透過電漿處理而生成的反應生成物的粒子之虞。若所產生的粒子落下至處理物的表面而附著於處理物的表面,則導致成品率的下降。In addition, if the plasma treatment is repeated, there is a possibility that particles derived from the reaction product generated by the plasma treatment may be generated. When the generated particles fall to the surface of the object to be processed and adhere to the surface of the object to be processed, the yield will decrease.
另外,粒子未必僅在製程腔室內產生。例如,透過傳輸腔室內的搬送機械手的動作而產生,或者在從外部空間將處理物搬入至加載互鎖腔室內時混入,或者還透過將腔室彼此連接的閘閥的開閉動作而產生。Additionally, particles are not necessarily generated only within the process chamber. For example, it is generated by the action of the transfer robot in the transfer chamber, or it is mixed in when the processed objects are carried into the load lock chamber from the external space, or it is generated by the opening and closing of the gate valves connecting the chambers.
因此,需要定期地檢查在電漿處理裝置1內是否產生粒子。Therefore, it is necessary to periodically check whether or not particles are generated in the
接著,對電漿處理裝置1的檢查方法進行說明。
圖5是用於例示包括第一粒子測定步驟的電漿處理裝置的檢查時的氣體G1的供給的時序圖。此外,在執行粒子測定步驟時,操作員操作控制器2的操作面板等輸入裝置,而將電漿處理裝置1的控制模式切換為檢查模式(粒子測定模式)。在所述檢查模式下,也能夠選擇與檢查對象相應的動作。例如,可選擇進行處理部6的粒子測定的動作、進行交接部7的粒子測定的動作等。圖5的例子是選擇了進行處理部6的粒子測定的動作的例子。
Next, an inspection method of the
圖5中的T1是處理物100從交接部7的腔室71向處理部6的腔室61的搬入開始的時機。
圖5中的T2是處理物100從處理部6的腔室61向交接部7的腔室71的搬出開始的時機。
T1 in FIG. 5 is the timing at which loading of the processed
在無要進行處理的處理物100的情況下,電漿處理裝置1處於待機狀態。在電漿處理裝置1為待機狀態的情況下,加載互鎖部5的腔室51的內部被排氣部52排氣,而維持為1×10
-2Pa~1×10
-1Pa左右的壓力。在本實施方式中,例如為5×10
-2Pa。
交接部7的腔室71內部的壓力維持為可抑制C
16H
30O
4的成分蒸發的5×10
-3Pa以上的壓力。具體而言,控制器2基於檢測腔室71內部的壓力的未圖示的壓力計的輸出,控制安裝於腔室71的壓力控制部66a,以使腔室71內部的壓力成為5×10
-3Pa以上的壓力。
處理部6的腔室61的內部被排氣部66排氣而維持為1×10
-3Pa~1×10
-2Pa的壓力。在本實施方式中,例如為1×10
-3Pa。
When there is no
在對電漿處理裝置1進行檢查的情況下,透過對加載互鎖部5的腔室51的內部進行排放而使腔室51內部的壓力成為與大氣壓力相同的壓力。搬送部4取出位於收納部3的內部的檢查用晶圓100a,並將其搬入至加載互鎖部5的腔室51的內部(圖5的(1))。即,控制器2透過切換為檢查模式,對搬送部4進行控制,以從收納部3內預先存儲的檢查用晶圓的收納位置取出檢查用晶圓100a。When the
當將檢查用晶圓100a搬入至腔室51的內部後,對腔室51的內部進行減壓。當將腔室51的內部減壓至規定壓力後,從氣體供給部74向腔室71的內部供給氣體G1,使腔室71內部的壓力為1×10
-1Pa以上。此外,所謂規定壓力,是1×10
-2Pa以上、小於1×10
-1Pa的壓力。在本實施方式中,例如為5×10
-2Pa。
當腔室51內部的壓力及腔室71內部的壓力成為所述壓力後,閘閥51a打開。然後,利用搬送部72將檢查用晶圓100a搬入至腔室71的內部(圖5的(2))。
After the
腔室51與電漿處理裝置1的外部的空間連通。因此,在檢查用晶圓100a的搬送時,外部的空間的空氣被取入至腔室51內。外部的空間的空氣中有包含水蒸氣或粒子之虞。透過將腔室71內部的壓力設為高於腔室51內部的壓力的壓力,可抑制水蒸氣或粒子從腔室51流入至腔室71。The
當將檢查用晶圓100a搬送至腔室71的內部後,閘閥51a關閉。當閘閥51a關閉後,氣體G1向腔室71的內部的供給停止。此外,腔室51內部的減壓得以維持。
當腔室71內部的壓力例如成為5×10
-2Pa後,打開閘閥61c。然後,利用搬送部72將檢查用晶圓100a搬入至腔室61的內部(圖5的T1)。
After the
在處理部6的腔室61的內部中,使用電漿從反應性高的氣體生成電漿生成物,進行處理物100的處理。因此,反應性高的氣體有時殘留於腔室61的內部或電漿處理時產生的副產物有時附著於處理部6的腔室61的內壁等。若使腔室71內部的壓力成為與處理部6的腔室61內部的壓力大致同等,則可抑制反應性高的氣體或副產物侵入至交接部7的腔室71的內部。In the
當將檢查用晶圓100a搬入至腔室61的內部後,關閉閘閥61c。將從打開閘閥61c起至關閉閘閥61c的期間作為檢查用晶圓100a的搬入期間T1a。當閘閥61c關閉後,從氣體供給部74向腔室71的內部供給氣體G1。由此,腔室71內部的壓力維持為1×10
-1Pa以上。
After the
當將腔室61內部的壓力減壓至規定壓力後,控制氣體供給部65來供給製程氣體G,直至腔室61內部的壓力成為實施電漿處理的壓力。實施電漿處理的壓力為1×10
-1Pa~10 Pa左右。在本實施方式中,例如為1 Pa。此外,所謂規定壓力,為1×10
-3Pa~1×10
-2Pa。
After reducing the pressure inside the
當腔室61內部的壓力成為實施電漿處理的壓力後,從高頻電源64a向天線63施加高頻電壓而產生電漿P。然後,使電漿P維持與對處理物100進行處理的時間相同的時間。After the pressure inside the
當電漿處理完成後,停止來自高頻電源64a的高頻電壓的施加與製程氣體G的供給。腔室61的內部被減壓至成為1×10
-3Pa~1×10
-2Pa的壓力。在本實施方式中,腔室61內部的壓力例如被減壓至成為1×10
-3Pa。
After the plasma treatment is completed, the application of the high-frequency voltage from the high-
當腔室61內部的壓力成為1×10
-3Pa後,停止來自氣體供給部74的氣體G1的供給。然後,當腔室71內部的壓力成為例如5×10
-2Pa後,打開閘閥61c。利用搬送部72將檢查用晶圓100a從腔室61的內部搬出(圖5的T2)。
When the pressure inside the
當利用搬送部72將檢查用晶圓100a搬送至腔室71的內部後,關閉閘閥61c。將從打開閘閥61c起至關閉閘閥61c的期間作為檢查用晶圓100a的搬出期間T2a。搬出期間T2a後,從氣體供給部74向腔室71內部供給氣體G1。After the
當腔室71內部的壓力成為1×10
-1Pa以上後,打開閘閥51a,利用搬送部72將檢查用晶圓100a搬送至腔室51(圖5的(4))。
When the pressure inside the
當將檢查用晶圓100a搬送至腔室51的內部後,關閉閘閥51a。在交接部7中,停止氣體G1向腔室71內部的供給。腔室71內部的壓力透過利用安裝於腔室71的壓力控制部66a來減小排氣部73的排氣量而維持為1×10
-2Pa以上。或者,腔室71內部的壓力透過調整氣體G1的流量而維持為1×10
-2Pa以上。在加載互鎖部5中,對腔室51的內部進行排放而使腔室51內部的壓力為大氣壓力。當腔室51內部的壓力成為與大氣壓力相同程度後,利用搬送部4從腔室51的內部取出檢查用晶圓100a,並收納於收納部3的原來的收納位置(圖5的(5))。然後,對附著於檢查用晶圓100a的粒子的數量進行測定。例如,在將檢查用晶圓100a放入至收納部3的狀態下搬送至未圖示的粒子的測定裝置,利用粒子的測定裝置對附著於檢查用晶圓100a的粒子的數量進行測定。
After the
如上所述,T1後的檢查用晶圓100a的搬入期間T1a、及T2後的檢查用晶圓100a的搬出期間T2a中,將交接部7的壓力暫時設為包含在圖2的蒸氣壓曲線的下側的區域中的壓力。具體而言,當閘閥61c打開時,腔室71內部的氣體流入至處理部6。因此,腔室71內部的壓力被減壓為與處理部6的腔室61內部的壓力(例如,即將實施電漿處理之前的規定壓力即1×10
-3Pa)大致同等。因此,在搬入期間T1a、及搬出期間T2a中,密封構件的成分蒸發而釋放至腔室71的內部。此外,所謂此時的「大致同等」,是指使腔室71內部的壓力處於自與腔室61內部的壓力相同的壓力至比與腔室61內部的壓力相同的壓力高5×10
-2Pa的壓力的範圍。
As described above, during the loading period T1a of the
然而,在經過搬入期間T1a、及搬出期間T2a後,交接部7的腔室71與處理部6的腔室61之間被閘閥61c閉鎖。然後,透過氣體供給部74向交接部7的腔室71的內部供給氣體G1,而使腔室71內部的壓力為5×10
-3Pa以上,較佳為1×10
-1Pa以上。因此,可抑制密封構件的成分蒸發。
However, after the carry-in period T1a and the carry-out period T2a pass, the
另外,即便將交接部7的腔室71及處理部6的腔室61的內部的壓力設為密封構件的成分能夠蒸發的壓力以下,透過向交接部7的內部導入氣體,也可抑制污染物(所蒸發的密封構件的成分)附著於檢查用晶圓100a。腔室71及腔室61的內部被進行排氣,以維持規定的減壓氣體環境。排氣部73及排氣部66的排氣速度(L/min)已決定。然後,當向腔室71及腔室61的內部供給氣體G1時,腔室71內的壓力上升,每單位體積的排出的氣體G1的量增加。結果,看起來像與供給氣體G1的量相應地,進行了腔室內部的排氣。即,透過所述排氣,可將污染物與氣體G1一起排出。In addition, even if the pressure inside the
如上所述,可抑制成為水痕的原因的污染物附著於檢查用晶圓100a。因此,可防止水痕被誤認為粒子,因此可準確地進行粒子的測定。As described above, it is possible to suppress contamination that causes water marks from adhering to the
另外,如根據圖5可知那樣,可縮短腔室71內部的壓力被減壓為與成為密封構件的成分能夠蒸發的壓力以下的壓力、即處理部6的腔室61內部的壓力大致同等的期間。因此,可抑制密封構件的成分蒸發。In addition, as can be seen from FIG. 5 , the period during which the pressure inside the
為了對附著於檢查用晶圓100a的粒子的數量進行測定,在腔室71的內部無處理物100的狀態長時間持續的情況下,也可控制安裝於腔室71的壓力控制部66a,而減小排氣部73的排氣量。透過減小排氣部73的排氣量,可削減使腔室71內部的壓力為1×10
-2Pa以上所需的氣體G1的量。此外,腔室71的內部無處理物100的狀態持續的時間例如是從停止氣體G1的供給起至腔室71內部的壓力成為1×10
-2Pa的時間。
In order to measure the number of particles adhering to the
使用圖5所示的氣體G1的供給方法進行包括測定粒子的第一粒子測定步驟的電漿處理裝置1的檢查方法,若無粒子,則開始處理物100的處理。在檢測到粒子的情況下,使用圖6所示的氣體G1的供給方法進行電漿處理裝置1的檢查。The inspection method of the
圖6是用於例示包括第二粒子測定步驟的電漿處理裝置的檢查時的氣體G1的供給的時序圖。圖6例示將檢查用晶圓100a搬送至交接部7後,不搬送至處理部6的內部而返回至加載互鎖部5時的氣體G1的供給。即,圖6的例子是在檢查模式下選擇了進行交接部7的粒子測定的動作的例子。FIG. 6 is a timing chart for illustrating the supply of gas G1 during the inspection of the plasma processing apparatus including the second particle measurement step. FIG. 6 exemplifies the supply of gas G1 when the
圖6的(1)與圖5的(1)相同,圖6的(2)與圖5的(2)相同,因此省略說明。
當將檢查用晶圓100a搬送至腔室71的內部後,閘閥51a關閉。檢查用晶圓100a例如在腔室71的內部停留數十秒鐘。為了接近實際對處理物100進行處理的條件,檢查用晶圓100a停留在腔室71的內部的時間較佳為設為與利用處理部6進行電漿處理的時間相同。在檢查用晶圓100a停留在腔室71的內部的期間,維持從氣體供給部74供給氣體G1。
(1) in FIG. 6 is the same as (1) in FIG. 5 , and (2) in FIG. 6 is the same as (2) in FIG. 5 , and thus description thereof will be omitted.
After the
當檢查用晶圓100a在腔室71的內部停留數十秒鐘後,打開閘閥51a,利用搬送部72將檢查用晶圓100a搬送至腔室51(圖6的(4))。After the
當將檢查用晶圓100a搬送至腔室51的內部後,關閉閘閥51a。在交接部7中,停止氣體G1向腔室71的內部的供給。腔室71內部的壓力透過利用安裝於腔室71的壓力控制部66a來減小排氣部73的排氣量而維持為1×10
-2Pa以上。在加載互鎖部5中,對腔室51的內部進行排放而使腔室51內部的壓力為大氣壓力。當腔室51內部的壓力成為與大氣壓力相同程度後,利用搬送部4從腔室51的內部取出檢查用晶圓100a,並收納於收納部3(圖6的(5))。然後,利用未圖示的粒子的測定裝置對附著於檢查用晶圓100a的粒子的數量進行測定。
After the
透過氣體供給部74向交接部7的腔室71的內部供給氣體G1,而使腔室71內部的壓力設為5×10
-3Pa以上,較佳為1×10
-1Pa以上。因此,可抑制密封構件的成分蒸發。因此,可抑制成為水痕的原因的污染物附著於檢查用晶圓100a。因此,可防止水痕被誤認為粒子,因此可準確地進行粒子的測定。
The gas G1 is supplied into the
使用圖6所示的氣體G1的供給方法進行包括測定粒子的第二粒子測定步驟的電漿處理裝置1的檢查方法,若無粒子,則開始處理部6內部的清潔。在檢測到粒子的情況下,開始加載互鎖部5內部的清潔。The inspection method of the
在進行了加載互鎖部5內部的清潔之後,實施使用圖6所示的氣體G1的供給方法的電漿處理裝置1的檢查方法。在所述檢查中還再次檢測到粒子的情況下,開始交接部7內部的清潔。After cleaning the inside of the load-
以上的順序例如可透過控制器2對搬送部72、排氣部73、及氣體供給部74進行控制來進行。
例如,在進行搬送部72對檢查用晶圓100a的搬送(搬入、搬出)時,控制器2控制排氣部73,以使腔室71內部的壓力成為與腔室61內部的壓力大致同等。例如,在搬送部72對檢查用晶圓100a的搬送結束時,控制器2控制氣體供給部74,而向腔室71的內部供給氣體G1。
例如,控制器2透過供給氣體G1,而使腔室71內部的壓力高於腔室61內部的壓力。
例如,控制器2透過供給氣體G1,而使腔室71內部的壓力為5×10
-3Pa以上,較佳為1×10
-1Pa以上。
The above procedure can be performed, for example, by the
另外,如以上所說明那樣,本實施方式的電漿處理裝置的檢查方法可包括以下的步驟。 一種電漿處理裝置的檢查方法,所述電漿處理裝置包括:第一腔室,維持較大氣壓經減壓的氣體環境,能夠在內部載置處理物;第一排氣部,能夠將所述第一腔室的內部減壓至規定壓力;電漿產生部,能夠產生所述電漿;第一氣體供給部,能夠向所述第一腔室的內部且為產生所述電漿的區域供給製程氣體;第二腔室,經由閘閥與所述第一腔室連接,能夠維持較大氣壓經減壓的氣體環境;搬送部,設置於所述第二腔室的內部,能夠在與所述第一腔室之間搬送所述處理物;第二排氣部,能夠將所述第二腔室的內部減壓至規定壓力;第二氣體供給部,能夠向所述第二腔室的內部供給氣體;以及控制器,能夠對所述搬送部、所述第二排氣部、及所述第二氣體供給部進行控制。所述電漿處理裝置的檢查方法包括第一粒子測定步驟,所述第一粒子測定步驟包括:在利用所述搬送部進行檢查用晶圓從所述第二腔室向所述第一腔室的搬送時,控制所述第二排氣部,以使所述第二腔室內部的壓力成為與所述第一腔室內部的壓力大致同等的步驟;在利用所述搬送部進行的所述檢查用晶圓向所述第一腔室的搬送結束時,控制所述第二氣體供給部,而向所述第二腔室的內部供給所述氣體的步驟;在搬入了所述檢查用晶圓的所述第一腔室內進行電漿處理的步驟;在利用所述搬送部進行檢查用晶圓從所述第一腔室向所述第二腔室的搬送時,控制所述第二排氣部,以使所述第二腔室內部的壓力成為與所述第一腔室內部的壓力大致同等的步驟;在利用所述搬送部進行的所述檢查用晶圓向所述第二腔室的搬送結束時,控制所述第二氣體供給部,而向所述第二腔室的內部供給所述氣體的步驟;以及對附著於從所述第二腔室搬出的所述檢查用晶圓的粒子進行測定的步驟。 例如,還包括以下步驟:在經由加載互鎖部從外部向所述第二腔室搬送所述檢查用晶圓時,在向所述第二腔室供給所述氣體而成為規定的減壓狀態之後,從所述加載互鎖部向所述第二腔室搬送所述檢查用晶圓。 例如,還包括第二粒子測定步驟,所述第二粒子測定步驟包括:在經由加載互鎖部從外部向所述第二腔室搬送所述檢查用晶圓時,在向所述第二腔室供給所述氣體而成為規定的減壓狀態之後,從所述加載互鎖部向所述第二腔室搬送所述檢查用晶圓的步驟;在從所述加載互鎖部向所述第二腔室搬送所述檢查用晶圓之後,將所述檢查用晶圓停留在所述第二腔室的步驟;不將所述檢查用晶圓搬送至所述第一腔室,而從第二腔室搬送至所述加載互鎖部的步驟;以及對附著於所述檢查用晶圓的粒子進行測定的步驟。 例如,實施所述第一粒子測定步驟,當檢測到粒子後,實施所述第二粒子測定步驟。 例如,實施所述第二粒子測定步驟,當未檢測到粒子時,實施所述第一粒子測定步驟。 例如,透過供給所述氣體,而使所述第二腔室內部的壓力為5×10 -3Pa以上。 此外,各步驟中的內容由於可設為與上文所述相同,因此省略詳細的說明。 In addition, as described above, the inspection method of the plasma processing apparatus according to the present embodiment may include the following steps. A method for inspecting a plasma processing device, the plasma processing device comprising: a first chamber, which maintains a relatively high pressure decompressed gas environment, and can place a processed object inside; a first exhaust part, which can place the The inside of the first chamber is decompressed to a predetermined pressure; the plasma generating unit can generate the plasma; the first gas supply unit can supply the first gas to the inside of the first chamber and the region where the plasma is generated. process gas; the second chamber is connected to the first chamber through a gate valve, and can maintain a relatively high pressure decompressed gas environment; the conveying part is arranged inside the second chamber, and can The process object is transported between the first chambers; the second exhaust unit can depressurize the inside of the second chamber to a predetermined pressure; the second gas supply unit can supply the gas to the inside of the second chamber. gas; and a controller capable of controlling the conveyance unit, the second exhaust unit, and the second gas supply unit. The inspection method of the plasma processing apparatus includes a first particle measurement step including: carrying out inspection wafers from the second chamber to the first chamber by the transfer unit. During the conveyance of the second chamber, the step of controlling the second exhaust unit so that the pressure inside the second chamber becomes substantially equal to the pressure inside the first chamber; a step of controlling the second gas supply unit to supply the gas into the second chamber when the transfer of the inspection wafer to the first chamber is completed; a step of performing plasma processing in the first chamber; when the inspection wafer is transferred from the first chamber to the second chamber by the transfer unit, controlling the second row an air part, a step of making the pressure inside the second chamber substantially equal to the pressure inside the first chamber; when the transfer of the chamber is completed, controlling the second gas supply unit to supply the gas into the second chamber; Round particles are measured in steps. For example, the method may further include the step of supplying the gas to the second chamber to achieve a predetermined depressurized state when the inspection wafer is transferred from the outside to the second chamber via a load lock. Thereafter, the inspection wafer is transferred from the load lock to the second chamber. For example, a second particle measurement step is further included, the second particle measurement step includes: when transferring the inspection wafer from the outside to the second chamber through the load lock, transferring the wafer to the second chamber After the gas is supplied to the chamber to become a predetermined depressurized state, the step of transferring the inspection wafer from the load lock to the second chamber; After the wafer for inspection is transported by the second chamber, the step of keeping the wafer for inspection in the second chamber; not transferring the wafer for inspection to the first chamber, but from the second chamber a step of transporting the chamber to the load lock; and a step of measuring particles attached to the inspection wafer. For example, the first particle measuring step is carried out, and when the particles are detected, the second particle measuring step is carried out. For example, the second particle detection step is carried out, and when no particles are detected, the first particle detection step is carried out. For example, by supplying the gas, the pressure inside the second chamber is made to be 5×10 −3 Pa or higher. In addition, since the content of each step can be made the same as what was mentioned above, detailed description is abbreviate|omitted.
以上,對本實施方式進行了例示。但是,本發明並不限定於這些記載。
本領域技術人員對上文所述的實施方式適宜施加設計變更而得的實施方式也只要具備本發明的特徵,則包含於本發明的範圍。
例如,電漿處理裝置1所包括的各元件的形狀、尺寸、材質、配置、數量等並不限定於例示,可適宜變更。
另外,上文所述的各實施方式所包括的各元件可盡可能地組合,將這些組合而得的實施方式也只要具備本發明的特徵,則包含於本發明的範圍。
The present embodiment has been exemplified above. However, the present invention is not limited to these descriptions.
Embodiments obtained by appropriately adding design changes to the above-described embodiments by those skilled in the art are included in the scope of the present invention as long as they have the characteristics of the present invention.
For example, the shape, size, material, arrangement, number, etc. of each element included in the
電漿處理裝置1的檢查方法不限於上述。例如,在後續步驟中發生來自粒子的不良情況時,電漿處理裝置1的檢查也可以首先進行如圖6所示的使用氣體G1的供給方法的電漿處理裝置1的檢查方法。
在所述檢查中檢測到粒子的情況下,進行加載互鎖部5內部的清潔。然後,在進行了加載互鎖部5內部的清潔之後,實施使用圖6所示的氣體G1的供給方法的電漿處理裝置1的檢查方法。在所述檢查中還再次檢測到粒子的情況下,開始交接部7內部的清潔。
The inspection method of the
另外,在最初的圖6的檢查中未檢測到粒子的情況下,粒子會在交接部7至處理部6之間的某處產生。在此情況下,在進行使用圖5所示的氣體G1的供給方法的電漿處理裝置1的檢查之前,也可進行以下的檢查。In addition, when no particles are detected in the first inspection of FIG. 6 , particles are generated somewhere between the
例如,也可控制氣體供給部65,實施至向腔室61的內部供給製程氣體G直至成為實施電漿處理的壓力為止之後,將檢查用晶圓100a返回至交接部7。例如,也可在將檢查用晶圓100a搬入至腔室61的內部之後,將檢查用晶圓100a返回至交接部7。由此,可確定產生粒子的部位。For example, the
在本實施方式中,利用安裝於腔室71的壓力控制部66a進行控制,以使腔室71內部的壓力維持為5×10
-3Pa以上。但是,並不限定於此。例如,也可將排氣部73設為組合渦輪分子泵與乾式泵而成,在腔室71的底部設置與乾式泵連接的排氣口。在腔室71的內部長時間無處理物100的情況下,也可利用乾式泵對腔室71的內部進行排氣。或者,也可當達到5×10
-3Pa後停止排氣部73。
In this embodiment, the
1:電漿處理裝置
2:控制器
3:收納部
4、72:搬送部
5:加載互鎖部
6:處理部
7:交接部
51、61、71:腔室
51a、61c:閘閥
52、66、73:排氣部
53、65、74:氣體供給部
61a:透射窗
61b:開口
62:載置部
63:天線
64a、64b:高頻電源
64a1、64b1:匹配器
65a、74a:流量控制部
66a:壓力控制部
100:處理物
B1、B2:點
G:製程氣體
G1:氣體
P:電漿
T1、T2:時機
T1a:搬入期間
T2a:搬出期間
1: Plasma treatment device
2: Controller
3:
圖1是用於例示本實施方式的電漿處理裝置的佈局圖。 圖2是C 16H 30O 4的蒸氣壓曲線。 圖3是用於例示處理部的一例的示意剖面圖。 圖4是用於例示交接部的示意剖面圖。 圖5是用於例示包括第一粒子測定步驟的電漿處理裝置的檢查時的氣體的供給的時序圖。 圖6是用於例示包括第二粒子測定步驟的電漿處理裝置的檢查時的氣體的供給的時序圖。 FIG. 1 is a layout diagram illustrating an example of a plasma processing apparatus according to this embodiment. Figure 2 is the vapor pressure curve of C 16 H 30 O 4 . Fig. 3 is a schematic cross-sectional view illustrating an example of a processing unit. Fig. 4 is a schematic cross-sectional view for illustrating an example of a transfer portion. FIG. 5 is a timing chart for illustrating gas supply during inspection of a plasma processing apparatus including a first particle measurement step. FIG. 6 is a timing chart for illustrating gas supply during inspection of a plasma processing apparatus including a second particle measurement step.
T1、T2:時機 T1a:搬入期間 T2a:搬出期間 51、61、71:腔室 74:氣體供給部 T1, T2: Timing T1a: during move-in T2a: during moving out 51, 61, 71: chamber 74: Gas supply part
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US20040240971A1 (en) * | 2003-06-02 | 2004-12-02 | Tokyo Electron Limited | Substrate processing apparatus and substrate transferring method |
US20060191877A1 (en) * | 2005-02-28 | 2006-08-31 | Tokyo Electron Limited | Plasma processing method and post-processing method |
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