JP2018157233A - Cleaning system and cleaning method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning system which can effectively remove residual components, and to provide a cleaning method.SOLUTION: A cleaning system according to an embodiment includes: a first supply part which supplies a first solution to a workpiece; a second supply part which supplies a second solution to the workpiece to which the first solution is supplied; a dry part which dries the workpiece to which the second solution is supplied; a container which can maintain an atmosphere decompressed to a level lower than the atmospheric pressure; a heating part which heats the dried workpiece placed in the container; a gas supply part which supplies a gas to the interior of the container; and a decompression part which decompresses the interior of the container to a predetermined pressure.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a cleaning system and a cleaning method.

In the manufacture of semiconductor devices, photomasks, etc., the surface of an object to be processed is treated with a chemical solution, the surface of the object to be treated with the chemical solution is washed with a cleaning liquid, and the object to be processed with the cleaning liquid attached is spun. It is made to dry (for example, refer patent document 1).
However, there is a possibility that residual components such as chemical components remain on the surface of the dried object to be processed only by spin drying.
If residual components such as chemical components remain on the surface of the dried object to be processed, foreign matter or the like is likely to be generated.
Therefore, it has been desired to develop a technique capable of effectively removing residual components.

JP 2004-296899 A

  The problem to be solved by the present invention is to provide a cleaning system and a cleaning method capable of effectively removing residual components.

  The cleaning system according to the embodiment includes a first supply unit that supplies a first solution to an object to be processed, and a second supply that supplies a second solution to the object to be processed supplied with the first solution. Part, a drying part for drying the object to be processed supplied with the second solution, a container capable of maintaining an atmosphere depressurized from atmospheric pressure, and the drying placed inside the container A heating unit that heats an object to be processed, a gas supply unit that supplies gas to the inside of the container, and a decompression unit that depressurizes the inside of the container to a predetermined pressure.

  According to the embodiments of the present invention, a cleaning system and a cleaning method capable of effectively removing residual components are provided.

1 is a schematic layout diagram of a cleaning system according to a first embodiment. FIG. 4 is a schematic diagram for illustrating a cleaning / drying unit 4. 3 is a schematic cross-sectional view for illustrating a residual component removing unit 5. FIG. It is a schematic cross section for illustrating the residual component removal part 105 which concerns on other embodiment. It is a schematic layout figure of the washing | cleaning system which concerns on 2nd Embodiment. 4 is a schematic diagram for illustrating a cleaning removal unit 45. FIG.

Hereinafter, embodiments will be illustrated with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.
[First embodiment]
FIG. 1 is a schematic layout diagram of the cleaning system according to the first embodiment.
As shown in FIG. 1, the cleaning system 1 includes a storage unit 2, a transport unit 3, a cleaning / drying unit 4, a residual component removing unit 5, and a control unit 6.

The storage unit 2 stores the workpiece 100. The workpiece 100 is, for example, a substrate having a plate shape. In addition, the planar shape of the workpiece 100 is not limited to the illustrated example, and can be changed as appropriate. The workpiece 100 is, for example, a wafer used for a semiconductor device, a glass substrate used for a photomask, or the like.
The storage unit 2 can be a carrier or the like that can store a plurality of objects to be processed 100 in a stacked (multistage) form. The storage unit 2 can be, for example, a FOUP (Front-Opening Unified Pod) or a SMIF (Standard Mechanical Interface). The FOUP is a front opening type carrier for the purpose of transporting and storing the workpiece 100 used in a mini-environment semiconductor factory, and the SMIF is a bottom opening type carrier.
Further, when the object to be processed 100 is a photomask used for exposure, the storage unit 2 can be a carrier capable of storing one object to be processed 100. The storage unit 2 can be a mask holder, for example. The mask holder is a carrier for the purpose of cleanly transporting the workpiece 100 between the exposure apparatus and the cleaning apparatus, for example.
The storage unit 2 can also include an elevating device that changes the storage position of the workpiece 100 in the vertical direction.

The storage unit 2 includes a storage unit 2a that stores the object to be processed 100 (the object to be processed 100) that is transported to the cleaning / drying unit 4, and a target object 100 that has been transported from the residual component removing unit 5 (the processed object). Storage portion 2b for storing the object to be processed 100).
However, the present invention is not limited to this, and the storage units 2a and 2b that store the workpiece 100 transported to the cleaning / drying unit 4 and the workpiece 100 transported from the residual component removing unit 5 are used. You can also.

The transport unit 3 transports the workpiece 100 between the storage unit 2a and the cleaning / drying unit 4, between the cleaning / drying unit 4 and the residual component removal unit 5, and between the residual component removal unit 5 and the storage unit 2b. I do.
The transport unit 3 includes a holding unit 3a, an arm unit 3b, and a driving unit 3c.
The support part 3a supports the workpiece 100. The support part 3a can be provided with holding means such as a mechanical chuck, a vacuum chuck, and an electrostatic chuck for holding the workpiece 100, for example. Note that the holding means is not necessarily required, and may be provided as necessary.

The arm portion 3b has a multi-joint structure, and can perform a bending operation and a turning operation. A support portion 3a is attached to one end side of the arm portion 3b. The arm part 3b can turn the attached support part 3a.
The other end side of the arm portion 3b is attached to the drive portion 3c.
The drive unit 3c has a control motor such as a servo motor, and causes the arm unit 3b to perform a bending operation and a turning operation. Moreover, the drive part 3c makes the support part 3a attached to the arm part 3b perform turning operation | movement.
The transport unit 3 can be, for example, a horizontal articulated robot.
However, the structure of the conveyance part 3 is not necessarily limited to what was illustrated, What is necessary is just what can convey the to-be-processed object 100 at least.

The cleaning / drying unit 4 processes the surface of the object to be processed 100 using the first solution 102, and cleans the surface of the object to be processed 100 processed by the first solution 102 using the second solution 103. To do.
Furthermore, the cleaning / drying unit 4 also serves as a drying unit that dries the object 100 to which the second solution 103 is supplied.
Details regarding the washing and drying unit 4 will be described later.

The residual component removing unit 5 removes residual components such as components (for example, chemical solution components) of the first solution 102 remaining on the surface of the dried object 100 to be processed.
The component of the first solution 102 remaining on the surface of the dried object 100 is, for example, at least one of sulfate ions and ammonium ions.
Details regarding the residual component removing unit 5 will be described later.
The control unit 6 controls the operation of elements provided in the storage unit 2, the transport unit 3, the cleaning / drying unit 4, and the residual component removing unit 5.

Next, the cleaning / drying unit 4 will be further described.
FIG. 2 is a schematic diagram for illustrating the cleaning / drying unit 4.
As shown in FIG. 2, the cleaning / drying unit 4 includes a processing unit 41, a first supply unit 42, and a second supply unit 43.

The processing unit 41 is provided with a placement unit 41a, a cover 41b, and a nozzle 41c.
As will be described later, the processing unit 41 also serves as a drying unit that dries the workpiece 100 supplied with the second solution 103.
The mounting unit 41a is provided with a mounting table 41a1, a rotating shaft 41a2, and a driving unit 41a3.
The mounting table 41a1 has a plate shape.
In addition, a plurality of protrusions 41a4 that hold the periphery of the workpiece 100 are provided on one main surface of the mounting table 41a1. If the periphery of the workpiece 100 is held by the plurality of protrusions 41a4, the portion where the workpiece 100 and the mounting table 41a1 are in contact with each other can be reduced. Therefore, dirt or damage of the workpiece 100 can be suppressed.

The rotating shaft 41a2 has a columnar shape.
One end of the rotating shaft 41a2 is connected to the surface on the opposite side of the mounting table 41a1 from the side on which the protrusion 41a4 is provided.
The rotation shaft 41a2 passes through the insertion portion 41b2 and extends to the outside of the cover 41b. The other end of the rotation shaft 41a2 is connected to the drive unit 41a3 outside the cover 41b.

The drive unit 41a3 may have a rotating device such as a motor.
The rotational force of the drive unit 41a3 is transmitted to the mounting table 41a1 via the rotation shaft 41a2.
Therefore, the drive unit 41a3 can rotate the mounting table 41a1, and consequently the workpiece 100 mounted on the mounting table 41a1.
In addition, the drive unit 41a3 can change the rotation speed (rotation speed) as well as rotation and rotation stop. In this case, the drive unit 41a3 can include a control motor such as a servo motor.

The cover 41b covers the periphery of the mounting table 41a1.
The cover 41b receives the first solution 102, the second solution 103, and the removed deposits that are supplied to the workpiece 100 and discharged to the outside of the workpiece 100 as the workpiece 100 rotates. .
A bent portion 41b1 that is bent toward the central direction is provided on the upper portion of the side wall of the cover 41b. If the bent portion 41b1 is provided, it becomes easy to capture the first solution 102, the second solution 103, and the removed deposits scattered above the workpiece 100.
A cylindrical insertion portion 41b2 that protrudes toward the inside of the cover 41b is provided at the center of the bottom surface of the cover 41b.
Since the insertion part 41b2 protrudes toward the inside of the cover 41b, the first solution 102 and the second solution 103 can be prevented from leaking from the part where the rotating shaft 41a2 goes out of the cover 41b.

A discharge port 41b3 is provided on the bottom surface of the cover 41b.
An opening / closing valve 41b4 can be provided at the discharge port 41b3.
Further, the pipe 41b5 can be connected to the on-off valve 41b4, and the on-off valve 41b4 can be connected to a factory pipe, a recovery device, etc. (not shown) via the pipe 41b5.
In this case, an inclined surface that is inclined toward the discharge port 41b3 can be provided on the bottom surface of the cover 41b. If such an inclined surface is provided, it is easy to discharge the first solution 102, the second solution 103, and the removed deposits that have flowed out to the bottom surface side of the cover 41b.

An elevating device for elevating the cover 41b can also be provided.
If an elevating device for raising and lowering the cover 41b is provided, the cover 41b can be lowered when the workpiece 100 is carried in and out, so that the mounting table 41a1 is exposed from the cover 41b.
Therefore, delivery of the workpiece 100 to the mounting table 41a1 can be facilitated.

The nozzle 41 c has a discharge port 41 c 1 that discharges the first solution 102 or the second solution 103.
The nozzle 41c is provided such that the discharge port 41c1 faces the mounting table 41a1. The nozzle 41c has a supply port 41c2 for supplying the first solution 102 and a supply port 41c3 for supplying the second solution 103.

In addition, although the nozzle 41c which has the supply port 41c2 and the supply port 41c3 was illustrated, it can also be set as the nozzle 41c which has the supply port which supplies the 1st solution 102 and the 2nd solution 103.
In addition, a nozzle that discharges the first solution 102 and a nozzle that discharges the second solution 103 may be provided separately.
The nozzle 41c may be fixed at a predetermined position, or may be provided so as to be able to move above the mounting table 41a1.

The first supply unit 42 includes a storage unit 42a, a solution supply unit 42b, a flow rate adjustment unit 42c, and a pipe 42d.
The storage unit 42a stores the first solution 102.
The 1st solution 102 is a chemical | medical solution for removing the deposit | attachment adhering to the surface of the to-be-processed object 100, for example. The first solution 102 is a chemical solution used for wet processing such as wet etching, wet ashing, and cleaning. Examples of the first solution 102 include a mixed solution of sulfuric acid and hydrogen peroxide solution, and a mixed solution of ammonia water, hydrogen peroxide solution, and pure water.
For example, the first solution 102 can include at least one of sulfate ions and ammonium ions.

The solution supply part 42b is connected to the storage part 42a. The solution supply unit 42b supplies the first solution 102 stored in the storage unit 42a toward the nozzle 41c.
The solution supply unit 42b can be a pump having resistance to the first solution 102 or the like. The solution supply unit 42b can be, for example, a chemical pump.
However, the solution supply part 42b is not limited to a pump. For example, the solution supply unit 42b may supply gas into the storage unit 42a and pump the first solution 102 stored in the storage unit 42a.

The flow rate adjusting unit 42c is connected to the solution supply unit 42b. The flow rate adjustment unit 42c adjusts the flow rate of the first solution 102 supplied by the solution supply unit 42b. The flow rate adjusting unit 42c can be, for example, a flow rate adjusting valve.
The flow rate adjusting unit 42c can also start and stop supplying the first solution 102.
One end of the pipe 42d is connected to the flow rate adjustment unit 42c. The other end of the pipe 42d is connected to the supply port 41c2 of the nozzle 41c.

The second supply unit 43 is provided with a storage unit 43a, a solution supply unit 43b, a flow rate adjustment unit 43c, and a pipe 43d.
The second supply unit 43 supplies the second solution 103 to the object 100 to which the first solution 102 is supplied.
Furthermore, when particles to be described later adhere to the object to be processed 100, the second supply unit 43 includes the object to be processed 100 heated by the residual component removing unit 5 (for example, the heating unit 55), Alternatively, the second solution 103 is further supplied to the object to be processed 100 subjected to plasma processing by the residual component removal unit 105 (for example, the plasma generation unit 112 and the process gas supply unit 115).
The storage unit 43 a stores the second solution 103.
The second solution 103 can be cleaning water such as pure water, for example.
The solution supply unit 43b is connected to the storage unit 43a. The solution supply unit 43b supplies the second solution 103 stored in the storage unit 43a toward the nozzle 41c.
The solution supply unit 43b can be a pump or the like.
However, the solution supply unit 43b is not limited to a pump. For example, the solution supply unit 43b may supply gas into the storage unit 43a and pump the second solution 103 stored in the storage unit 43a.

The flow rate adjusting unit 43c is connected to the solution supply unit 43b. The flow rate adjustment unit 43c adjusts the flow rate of the second solution 103 supplied by the solution supply unit 43b. The flow rate adjusting unit 43c can be, for example, a flow rate adjusting valve.
In addition, the flow rate adjusting unit 43c can also start and stop supplying the second solution 103.
One end of the pipe 43d is connected to the flow rate adjusting unit 43c. The other end of the pipe 43d is connected to the supply port 41c3 of the nozzle 41c.

In addition, an ultrasonic vibration device that applies ultrasonic vibration to at least one of the first solution 102 and the second solution 103 may be provided.
For example, the ultrasonic vibration device can be incorporated in the nozzle 41c, the mounting table 41a1, or the like.
In addition, it is possible to provide a recovery device that recovers and reuses the first solution 102 and the second solution 103 discharged from the discharge port 41b3 of the cover 41b.

Next, the residual component removal unit 5 will be further described.
FIG. 3 is a schematic cross-sectional view for illustrating the residual component removing unit 5.
The residual component removing unit 5 heats the dried object 100 in an atmosphere containing a predetermined gas G and depressurized from the atmospheric pressure.
As shown in FIG. 3, the residual component removal unit 5 includes a container 51, a placement unit 52, a decompression unit 53, a gas supply unit 54, a heating unit 55, and a detection unit 56.

The container 51 has an airtight structure and can maintain an atmosphere reduced in pressure from atmospheric pressure.
On the side wall of the container 51, a loading / unloading outlet 51b for loading and unloading the workpiece 100 is provided.
In addition, an opening / closing door 51a capable of airtightly closing the loading / unloading exit 51b is provided.

The placement unit 52 is provided inside the container 51.
A plurality of protrusions 52 a that hold the periphery of the workpiece 100 are provided on one main surface of the mounting portion 52. If the periphery of the workpiece 100 is held by the plurality of protrusions 52a, the portion where the workpiece 100 and the placement portion 52 are in contact with each other can be reduced. Therefore, dirt or damage of the workpiece 100 can be suppressed.

The decompression unit 53 decompresses the interior of the container 51 to a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the container 51.
The decompression unit 53 is provided with an exhaust unit 53a and a pressure control unit 53b.
The exhaust part 53a is connected to the container 51 via the pressure control part 53b.
The exhaust part 53a can be, for example, a turbomolecular pump.
The pressure controller 53b can be, for example, an automatic pressure controller.

The gas supply unit 54 supplies the gas G into the container 51.
The gas supply unit 54 is provided with a gas storage unit 54a and a flow rate control unit 54b.
The gas storage unit 54 a stores the gas G and supplies the stored gas G into the container 51 through the flow rate control unit 54 b.
The gas storage unit 54a may be, for example, a high-pressure cylinder that stores high-pressure gas G.
The flow rate control unit 54b controls the flow rate (supply amount) of the gas G supplied from the gas storage unit 54a. Further, the flow rate control unit 54b can also control the start and stop of the supply of the gas G.
The flow control unit 54b can be, for example, a mass flow controller.
The gas G can hardly react with the workpiece 100. The gas G can be, for example, nitrogen gas, an inert gas such as alkone gas or helium gas, or the like.

Here, the residual component removing unit 5 heats the object to be processed 100 in an atmosphere reduced in pressure from the atmospheric pressure. Moreover, the to-be-processed object 100 is hold | maintained the periphery by the some protrusion part 52a. Therefore, the workpiece 100 is heated mainly by radiant heat. If the workpiece 100 is heated only by radiant heat, the heating time becomes longer, and as a result, the productivity may deteriorate.
Therefore, by supplying a predetermined amount of gas G into the container 51 by the gas supply unit 54, heat conduction by convection is performed in addition to heat conduction by radiation.

The heating unit 55 heats the workpiece 100.
The heating unit 55 includes a heating body 55b and a temperature sensor 55a provided in the vicinity of the placed workpiece 100.
The heater 55b can be, for example, a heater that uses Joule heat. The heating body 55b can be incorporated in the mounting portion 52, for example.
However, the heating method and arrangement position of the heating element 55b are not limited to those illustrated, and can be changed as appropriate. The heating body 55b only needs to be able to heat the object to be processed 100, and may be provided at a position suitable for heating the object to be processed 100. For example, the heating body 55b can be a far-infrared heater provided above the placement unit 52.
A detection signal from the temperature sensor 55 a is input to the control unit 6, and temperature control of the heating unit 55, and thus temperature control of the workpiece 100, is performed by a temperature control device built in the control unit 6. The temperature control device incorporated in the control unit 6 can change, for example, the voltage applied to the heating body 55b.

The detection unit 56 detects a component contained in the atmosphere inside the container 51.
The detection unit 56 may be a mass spectrometer such as a quadrupole mass spectrometer, for example.
The detection unit 56 detects the degree of removal of residual components remaining on the surface of the workpiece 100, the ratio of the gas G contained in the atmosphere inside the container 51, and the like.
For example, the detection unit 56 detects at least one of sulfate ions and ammonium ions desorbed from the heated object 100 to be processed.
The degree of removal of the residual component can be known by obtaining the relationship between the removal amount of the residual component and the detection value in the detection unit 56 in advance through experiments or simulations.
A detection signal from the detection unit 56 is input to the control unit 6.

  As will be described later, the cleaning / drying unit 4 rotates the workpiece 100 at a predetermined rotational speed. When the workpiece 100 rotates, the second solution 103 attached to the workpiece 100 is discharged to the outside of the workpiece 100. And the to-be-processed object 100 dries because the 2nd solution 103 is discharged | emitted.

However, it is difficult to remove residual components such as the components of the first solution 102 remaining on the surface of the workpiece 100 only by drying by rotation.
Examples of the residual component include sulfate ions and ammonium ions contained in the first solution 102.
In this case, removal of sulfate ions, ammonium ions, etc. is more difficult than removal of water. If sulfate ions remain on the surface of the workpiece 100, the sulfate ions may react with ammonium ions in the atmosphere to deposit ammonium sulfate. The precipitation of ammonium sulfate becomes a cause of generation of foreign matters.

Therefore, the residual component removing unit 5 is configured to remove sulfate ions, ammonium ions, and the like remaining on the surface of the workpiece 100 by heating the workpiece 100 in an atmosphere that is depressurized from the atmospheric pressure. ing.
In addition, by supplying a predetermined amount of gas G into the container 51 by the gas supply unit 54, the heating time of the workpiece 100 is shortened.

The control unit 6 controls the operation of the elements provided in the storage unit 2.
For example, the control unit 6 controls the lifting device provided in the storage unit 2 to change the storage position of the workpiece 100 in the vertical direction.
The control unit 6 controls the operation of elements provided in the transport unit 3.
For example, the control unit 6 controls the holding unit provided in the holding unit 3 a to hold and release the workpiece 100.
The control unit 6 controls the driving unit 3c to carry the workpiece 100.

The control unit 6 controls the operation of the elements provided in the cleaning / drying unit 4.
For example, the control unit 6 controls the drive unit 41a3 to start rotation of the mounting table 41a1 (the object to be processed 100), stop rotation, and change the number of rotations (rotation speed).
The controller 6 controls the on-off valve 41b4 to discharge the first solution 102 and the second solution 103 from the cover 41b.
The control unit 6 controls the solution supply unit 42b to start supply of the first solution 102, stop supply, control the supply time, and the like.
The control unit 6 controls the flow rate adjusting unit 42c to change the flow rate (supply amount) of the first solution 102.
The control unit 6 controls the solution supply unit 43b to start supply of the second solution 103, stop supply, control the supply time, and the like.
The control unit 6 controls the flow rate adjusting unit 43c to change the flow rate (supply amount) of the second solution 103.

The control unit 6 controls the operation of the elements provided in the residual component removal unit 5.
For example, the control unit 6 controls the open / close door 51a to seal and release the carry-in / out port 51b.
The control unit 6 controls the exhaust unit 53a and the pressure control unit 53b so that the inside of the container 51 has a predetermined pressure.
The control unit 6 controls the flow rate control unit 54 b based on the detection signal from the detection unit 56 so that a predetermined amount of gas G is contained in the container 51.
The control unit 6 changes the temperature of the heating body 55b and consequently the temperature of the workpiece 100 based on the detection signal from the temperature sensor 55a.
The control unit 6 calculates the degree of residual component removal based on the detection signal from the detection unit 56. Then, the control unit 6 continues the removal process in the residual component removal unit 5 or ends the removal process based on the calculation result.

Next, the residual component removal unit 105 according to another embodiment is illustrated.
FIG. 4 is a schematic cross-sectional view for illustrating a residual component removing unit 105 according to another embodiment.
The residual component removal unit 5 illustrated in FIG. 3 is a residual component remaining on the surface of the workpiece 100 by heating the workpiece 100 in an atmosphere containing a predetermined gas G and depressurized from the atmospheric pressure. Remove.
On the other hand, the residual component removal unit 105 illustrated in FIG. 4 uses a plasma product generated from the process gas G1 containing at least one of oxygen atoms and hydrogen atoms on the surface of the workpiece 100. Remove remaining residual components.

As shown in FIG. 4, the residual component removal unit 105 includes a plasma generation unit 112, a container 123, a rectifying plate 116, a microwave generation unit 114, a process gas supply unit 115, a decompression unit 53, a detection unit 56, and the like. Yes.
The plasma generator 112 generates the plasma P by supplying microwaves (electromagnetic energy) to a region where the plasma P is generated.
The plasma generator 112 is provided with a transmission window 112a and an introduction waveguide 112b. The transmission window 112a has a flat plate shape and is made of a material that has a high transmittance with respect to the microwave M and is difficult to be etched. The transmission window 112a can be formed from, for example, quartz.
The transmission window 112a is provided at the upper end of the container 123 so as to be airtight.

An introduction waveguide 112b is provided outside the container 123 and on the top surface of the transmission window 112a. The introduction waveguide 112b propagates the microwave M radiated from the microwave generation unit 114 and introduces the microwave M into a region where the plasma P is generated.
A slit 112c is provided at a connection portion between the introduction waveguide 112b and the transmission window 112a. The slit 112c is for radiating the microwave M guided inside the introduction waveguide 112b toward the transmission window 112a.

  A microwave generator 114 is provided at one end of the introduction waveguide 112b. The microwave generation unit 114 can generate a microwave M having a predetermined frequency (eg, 2.45 GHz) and radiate the microwave M toward the introduction waveguide 112b.

The process gas supply unit 115 is connected to the upper part of the side wall of the container 123.
The process gas supply unit 115 is provided with a gas storage unit 115a and a flow rate control unit (MFC) 115b.
The gas storage unit 115a stores the process gas G1 and supplies the stored process gas G1 into the container 123 via the flow rate control unit 115b.
The gas storage unit 115a may be, for example, a high-pressure cylinder that stores a high-pressure process gas G1.
The flow rate control unit 115b controls the flow rate (supply amount) of the process gas G1 supplied from the gas storage unit 115a. The flow rate control unit 115b can also control the start and stop of the supply of the process gas G1.
The flow control unit 115b can be, for example, a mass flow controller.

The process gas G1 contains at least one of oxygen atoms and hydrogen atoms.
The process gas G1 can include, for example, at least one of oxygen gas and hydrogen gas. In this case, the process gas G1 can include, for example, at least one of oxygen gas, a mixed gas containing oxygen gas, a hydrogen gas, and a mixed gas containing hydrogen gas. The mixed gas containing oxygen gas can be, for example, a mixed gas of oxygen gas and nitrogen gas. The mixed gas containing hydrogen gas can be, for example, a mixed gas of hydrogen gas and nitrogen gas.

The container 123 has a substantially cylindrical shape with a bottom, and can maintain an atmosphere that is depressurized from atmospheric pressure. That is, the container 123 has a region for generating the plasma P inside, and can maintain an atmosphere reduced in pressure from the atmospheric pressure.
On the side wall of the container 123, a loading / unloading port 123a for loading and unloading the workpiece 100 is provided.
In addition, an opening / closing door 123b capable of airtightly closing the loading / unloading outlet 123a is provided.
The placement portion 113 a is provided inside the container 123. The mounting portion 113a is provided in the vicinity of the region where the plasma P is generated.
The current plate 116 is provided inside the container 123.
The rectifying plate 116 is provided below the connection portion between the container 123 and the process gas supply unit 115 and above the placement unit 113a.
The rectifying plate 116 is provided so as to face the upper surface (mounting surface) of the mounting portion 113a.
The rectifying plate 116 rectifies the flow of the gas containing the plasma product generated in the region where the plasma P is generated, so that the amount of the plasma product on the processing surface of the workpiece 100 becomes substantially uniform. Is for.
The rectifying plate 116 is a substantially circular plate-like body provided with a large number of holes 116 a, and is fixed to the inner wall of the container 123. And the area | region between the baffle plate 116 and the upper surface (mounting surface) of the mounting part 113a becomes the process space 120 in which the process with respect to a to-be-processed object is performed. Further, the inner wall surface of the container 123 and the surface of the rectifying plate 116 are covered with a material that does not easily react with the neutral active species (for example, a ceramic material such as tetrafluororesin (PTFE) or alumina).
The placement unit 113a places the object to be processed 100 having at least one of sulfate ion and ammonium ion on the surface.
A holding unit (not shown) for holding the workpiece 100 can be provided inside the mounting portion 113a. The holding means (not shown) can be, for example, an electrostatic chuck.

A temperature control unit 113b for controlling the temperature of the workpiece 100 can be provided inside the placement unit 113a.
The temperature control unit 113b can be, for example, a heater that uses Joule heat, a temperature control device that circulates a heated or cooled medium, and the like.
Note that the temperature control unit 113b is not always necessary, and can be provided when the temperature of the workpiece 100 is controlled.
Moreover, the mounting part 113a can be provided with a lift pin (not shown) for delivering the workpiece 100.

The control unit 6 controls the operation of each element provided in the residual component removal unit 105.
For example, the control unit 6 controls the opening / closing operation of the opening / closing door 123b provided in the container 123.
The control unit 6 controls, for example, operations of a holding unit and a lift pin (not shown) provided in the mounting unit 113a.
For example, the control unit 6 controls the temperature of the workpiece 100 by controlling the temperature control unit 113b provided in the placement unit 113a.
For example, the control unit 6 controls the microwave generation unit 114 to control generation and stop of the plasma P.
At this time, the control unit 6 can control the processing time by controlling the microwave generation unit 114.
For example, the control unit 6 controls the gas storage unit 115a and the flow rate control unit 115b to supply the process gas G1 having a predetermined flow rate to the region in the vessel 123 where the plasma P is generated.
For example, the control unit 6 controls the exhaust unit 53a and the pressure control unit 53b so that the internal pressure of the container 123 becomes a predetermined pressure.

As an example, the residual component removing unit 105 described above is an apparatus that performs SWP (Surface Wave Plasma) processing, but may be any apparatus that is suitable for generating radicals.
For example, plasma is generated in a container separated from a processing container, such as a remote plasma processing apparatus, and a gas containing radicals is introduced into the processing container through a gas transfer tube to process the object to be processed. It may be a device.
In addition, an apparatus that generates charged particles such as ions together with radicals may be used. For example, a device that generates a plasma by applying a radio frequency (RF) voltage between the electrodes may be used.
That is, as the electromagnetic energy for generating the plasma P, a microwave can be used, and a high frequency can be used.
Moreover, although the apparatus which generate | occur | produces the plasma P in a pressure-reduced environment was illustrated, it can also be set as the apparatus which generate | occur | produces the plasma P in an atmospheric pressure environment.

Next, together with the operation of the cleaning system 1, a cleaning method according to the present embodiment will be illustrated (see FIG. 1).
First, the workpiece 100 is taken out of the storage unit 2a by the transport unit 3.
Next, the workpiece 100 is transported toward the cleaning / drying unit 4 by the transport unit 3.
Next, the to-be-processed object 100 is mounted by the conveyance part 3 on the protrusion part 41a4 provided in the main surface of the mounting part 41a.
Next, the placement portion 41a is rotated by the drive portion 41a3. As the mounting portion 41a rotates, the mounted workpiece 100 rotates.
Next, the first solution 102 stored in the storage unit 42a is sent toward the nozzle 41c by the solution supply unit 42b. At this time, the supply amount of the first solution 102 is controlled by the flow rate adjusting unit 42c. The first solution 102 sent toward the nozzle 41 c is discharged from the nozzle 41 c and supplied to the surface of the workpiece 100. The first solution 102 supplied to the surface of the object to be processed 100 removes the deposits attached to the surface of the object to be processed 100. The removed deposit and the first solution 102 are discharged to the outside of the workpiece 100 by the rotation of the workpiece 100.

  Next, the 2nd solution 103 accommodated in the accommodating part 43a is sent toward the nozzle 41c by the solution supply part 43b. At this time, the supply amount of the second solution 103 is controlled by the flow rate adjusting unit 43c. The second solution 103 sent toward the nozzle 41 c is discharged from the nozzle 41 c and supplied to the surface of the workpiece 100. By the second solution 103 supplied to the surface of the object to be processed 100, the deposits and the first solution 102 remaining on the surface of the object to be processed 100 are removed. That is, the deposits remaining on the surface of the workpiece 100 and the first solution 102 are washed away by the second solution 103.

  Next, the second solution 103 remaining on the surface of the object to be processed 100 is discharged to the outside of the object to be processed 100 by the rotation of the mounting portion 41a. At this time, the rotation speed of the mounting portion 41a can be increased. By discharging the second solution 103 remaining on the surface of the workpiece 100, the workpiece 100 is dried.

As described above, it is difficult to remove residual components such as the components of the first solution 102 remaining on the surface of the workpiece 100 simply by drying the workpiece 100.
Therefore, next, residual components such as the components of the first solution 102 remaining on the surface of the workpiece 100 are removed by the residual component removing unit 5 or the residual component removing unit 105.

First, the workpiece 100 is taken out from the cleaning / drying unit 4 by the transport unit 3.
Next, the workpiece 100 is transported by the transport unit 3 toward the residual component removing unit 5 or the residual component removing unit 105.
In the following, first, the operation of the residual component removing unit 5 will be illustrated.
First, the opening / closing door 51 a of the container 51 is opened, and the workpiece 100 is carried into the container 51 by the transport unit 3.
Next, the workpiece 100 is placed on the protruding portion 52 a provided on the placement portion 52 by the transport unit 3.
Next, the transport unit 3 is retracted to the outside of the container 51, and the opening / closing door 51a of the container 51 is closed.

Next, the inside of the container 51 is depressurized to a predetermined pressure by the exhaust part 53a and the pressure control part 53b.
At this time, a predetermined amount of gas G is supplied into the container 51 by the gas supply unit 54.
The internal pressure of the container 51 and the supply amount of the gas G can be set as appropriate according to the type of residual component. The internal pressure of the container 51 and the supply amount of the gas G can be obtained by conducting experiments and simulations in advance.
For example, the internal pressure of the container 51 can be 1 Pa or more and 500 Pa or less in a state where the gas G is supplied.
Further, based on the detection result from the temperature sensor 55a, the control of the heating unit 55 by the temperature control device built in the control unit 6 and the temperature control of the workpiece 100 are performed.
The heating temperature can be appropriately set according to the type of residual component. The heating temperature can be obtained by conducting experiments and simulations in advance.
For example, the temperature in the vicinity of the workpiece 100 can be 400 ° C. or lower.

Next, the degree of removal of residual components on the surface of the workpiece 100 is detected by the detection unit 56.
For example, the detection unit 56 detects at least one of sulfate ions and ammonium ions desorbed from the heated object 100 to be processed.
The detection result relating to the degree of removal of the residual component is input to the control unit 6, and based on the detection result, it is determined whether to continue the removal process or end the removal process in the residual component removal unit 5. This determination can be made using a predetermined threshold value. Alternatively, it may be determined that the removal process has ended when the detection unit 56 is outside the range that can be detected.
In addition, the ratio of the gas G contained in the atmosphere inside the container 51 can be detected by the detection unit 56.
The detection result regarding the ratio of the gas G is input to the control unit 6, and the supply amount of the gas G is controlled based on the detection result.
Next, the opening / closing door 51 a of the container 51 is opened, and the workpiece 100 is carried out of the container 51 by the transport unit 3.

Next, the operation of the residual component removing unit 105 will be illustrated.
First, the opening / closing door 123b of the container 123 is opened, and the workpiece 100 is carried into the container 123 by the transport unit 3.
Next, the workpiece 100 is placed on the placement unit 113a by the transport unit 3.
Next, the transport unit 3 is retracted to the outside of the container 123, and the open / close door 123b of the container 123 is closed.

The inside of the hermetically sealed container 123 is decompressed to a predetermined pressure by the decompression unit 53. For example, the internal pressure of the container 123 is set to about 120 Pa by the decompression unit 53. Note that the internal pressure of the container 123 can be changed as appropriate within a range in which the generation of the plasma P is not hindered.
Further, the process gas G 1 is supplied into the container 123 by the process gas supply unit 115.
The process gas G1 contains at least one of oxygen atoms and hydrogen atoms.
The process gas G1 can include, for example, at least one of oxygen gas and hydrogen gas. The process gas G1 can include, for example, at least one of oxygen gas, a mixed gas containing oxygen gas, a hydrogen gas, and a mixed gas containing hydrogen gas. In this case, the mixed gas containing oxygen gas can be, for example, a mixed gas of oxygen gas and nitrogen gas. The mixed gas containing hydrogen gas can be, for example, a mixed gas of hydrogen gas and nitrogen gas.

  Further, the microwave M is radiated from the microwave generator 114, and the microwave M is introduced into the transmission window 112a through the slit 112c. The introduced microwave M propagates on the surface of the transmission window 112a and is radiated to a region where the plasma P in the container 123 is generated. The plasma P of the process gas G1 is formed by the energy of the microwave M emitted to the region where the plasma P is generated. When the electron density in the plasma P becomes equal to or higher than the density (cutoff density) that can shield the microwave M introduced through the transmission window 112a, the microwave M is a certain distance (skin depth) from the lower surface of the transmission window 112a. It will be reflected only before entering. Therefore, a standing wave of the microwave M is formed.

Then, the reflection surface of the microwave M becomes a plasma excitation surface, and the plasma P is stably excited on this plasma excitation surface. In the plasma P excited on the plasma excitation surface, plasma products containing radicals (neutral active species) such as atoms, molecules, free atoms and the like excited by collision of ions with the molecules of the process gas G1 are present. Generated. In this case, since the process gas G1 contains at least one of an oxygen atom and a hydrogen atom, at least one of an oxygen radical and a hydrogen radical is generated.
The generated plasma product containing the radicals diffuses downward in the container 123. Then, residual components such as sulfate ions are removed by at least one of oxygen radicals and hydrogen radicals that have reached the surface of the workpiece 100.

Note that the temperature control of the workpiece 100 can also be performed by the temperature control unit 113b.
For example, when the temperature of the workpiece 100 becomes too high due to the radiant heat of the plasma P, the temperature of the workpiece 100 can be lowered. In addition, the temperature of the object to be processed 100 can be controlled so that the reaction between residual components such as sulfate ions and radicals is promoted.
In addition, although the temperature of the to-be-processed object 100 can be about 100 degreeC, for example, it can change suitably in the range which does not inhibit reaction with residual components, such as a sulfate ion, and the radical mentioned above.

Next, the degree of removal of residual components on the surface of the workpiece 100 is detected by the detection unit 56.
For example, the detection unit 56 detects at least one of sulfate ions and ammonium ions desorbed from the workpiece 100.
The detection result relating to the degree of removal of the residual component is input to the control unit 6, and based on the detection result, it is determined whether to continue the removal process or end the removal process in the residual component removal unit 105. This determination can be made using a predetermined threshold value. Alternatively, it may be determined that the removal process has ended when the detection unit 56 is outside the range that can be detected.
Next, the open / close door 123b of the container 123 is opened, and the workpiece 100 is carried out of the container 123 by the transport unit 3.

Next, the workpiece 100 is transported toward the cleaning / drying unit 4 by the transport unit 3.
Then, in the same manner as described above, the second solution 103 is supplied to the surface of the object to be processed 100 to clean particles adhering to the surface of the object to be processed 100. In addition, the second solution 103 is supplied to the surface of the workpiece 100, and the workpiece 100 heated by the heating unit 55 or the heat of the plasma P is cooled.
By the residual component removing unit 5 or the residual component removing unit 105, the residual component on the workpiece 100 can be removed by heating or a chemical reaction with radicals as described above.
However, when performing processing by the residual component removing unit 5 or the residual component removing unit 105, the gas G supplied from the gas supply unit 54, the particles contained in the gas G1 supplied from the process gas supply unit 115, In some cases, particles present in the residual component removing unit 5 or the residual component removing unit 105 may adhere to the workpiece 100.
In this case, the adhered particles can be physically removed by performing re-cleaning by the cleaning / drying unit 4.
Next, in the same manner as described above, the workpiece 100 is dried by rotating it.
Note that re-washing or cooling with the second solution 103 and drying may be performed as necessary.

Next, the to-be-processed object 100 is conveyed toward the accommodating part 2b by the conveyance part 3, and is accommodated in the accommodating part 2b.
Next, the processing object 100 is continuously processed by repeating the above-described procedure as necessary.

As described above, the cleaning method according to the present embodiment can include the following steps.
Supplying the first solution 102 to the workpiece 100;
Supplying the second solution 103 to the workpiece 100 to which the first solution 102 has been supplied.
A step of drying the workpiece 100 to which the second solution 103 is supplied.
A step of heating the dried workpiece 100 in an atmosphere containing a predetermined gas G and depressurized from atmospheric pressure.
Alternatively, instead of the heating step, a process of processing the dried object 100 using a plasma product generated from the process gas G1 containing at least one of oxygen atoms and hydrogen atoms.
Furthermore, a step of detecting at least one of sulfate ions and ammonium ions desorbed from the workpiece 100 can be provided.

[Second Embodiment]
FIG. 5 is a schematic layout diagram of the cleaning system according to the second embodiment.
As shown in FIG. 5, the cleaning system 1 a includes a storage unit 2, a transport unit 3, a cleaning removal unit 45, and a control unit 6.
FIG. 6 is a schematic diagram for illustrating the cleaning removal unit 45.
The cleaning / removal unit 45 is an integration of the above-described cleaning / drying unit 4 and the residual component removing unit 5.
That is, as shown in FIG. 6, a processing unit 41 is provided inside the container 51 in place of the mounting unit 52 described above.
In this case, the heating body 55b can be provided in the mounting table 41a1, for example.
The action of the washing and removing unit 45 can be the combination of the action of the washing and drying unit 4 and the action of the residual component removing unit 5 described above.
That is, the cleaning / removal unit 45 has the following operation, which is the operation of the cleaning / drying unit 4.
The cleaning and removing unit 45 processes the surface of the object to be processed 100 using the first solution 102, and cleans the surface of the object to be processed 100 processed by the first solution 102 using the second solution 103. To do.
Furthermore, the cleaning removal unit 45 also serves as a drying unit that dries the object 100 to which the second solution 103 is supplied.
In addition, the cleaning removal unit 45 has the following operation, which is the operation of the residual component removal unit 5.
The cleaning removal unit 45 removes residual components such as components (for example, chemical solution components) of the first solution 102 remaining on the surface of the dried object 100 to be processed.
Therefore, the detail regarding the structure of the element provided in the washing | cleaning system 1a and the detail regarding the effect | action of the washing | cleaning system 1a are abbreviate | omitted.

The embodiment has been illustrated above. However, the present invention is not limited to these descriptions.
Regarding the above-described embodiment, those in which those skilled in the art appropriately added, deleted, or changed the design, or added the process, omitted, or changed the conditions also have the features of the present invention. As long as it is within the scope of the present invention.
For example, the shape, size, material, arrangement, number, and the like of each element included in the cleaning systems 1 and 1a are not limited to those illustrated, but can be changed as appropriate.
Moreover, each element with which each embodiment mentioned above is combined can be combined as much as possible, and what combined these is also included in the scope of the present invention as long as the characteristics of the present invention are included.

DESCRIPTION OF SYMBOLS 1 Cleaning system, 1a Cleaning system, 2 Storage part, 3 Conveying part, 4 Cleaning drying part, 5 Residual component removal part, 6 Control part, 41 Processing part, 41a Mounting part, 41c Nozzle, 42 1st supply part, 43 Second supply unit, 45 Washing and removing unit, 51 Container, 53 Decompression unit, 54 Gas supply unit, 55 Heating unit, 55a Temperature sensor, 56 Detection unit, 100 Processed object, 102 First solution, 103 Second Solution, 105 residual component removal unit, 112 plasma generation unit, 114 microwave generation unit, 115 process gas supply unit, 123 container, G gas, G1 process gas

Claims (14)

A first supply unit for supplying a first solution to the object to be processed;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A container capable of maintaining an atmosphere depressurized from atmospheric pressure;
A heating unit for heating the dried object to be processed placed inside the container;
A gas supply unit for supplying gas into the container;
A decompression section for decompressing the inside of the container to a predetermined pressure;
With cleaning system.   The cleaning system according to claim 1, wherein the drying unit is provided inside the container.   The cleaning system according to claim 1, wherein the second supply unit further supplies the second solution to the object to be processed heated by the heating unit. A first supply unit for supplying a first solution to the object to be processed;
A second supply unit for supplying a second solution to the object to be processed supplied with the first solution;
A drying section for drying the object to be treated supplied with the second solution;
A plasma generator for supplying electromagnetic energy to a region for generating plasma;
A process gas supply unit for supplying a process gas containing at least one of oxygen atoms and hydrogen atoms to the region for generating plasma;
With cleaning system.   The cleaning system according to claim 4, wherein the second supply unit further supplies the second solution to the object to be processed that has been plasma-processed by the plasma generation unit and the process gas supply unit. The first solution contains at least one of sulfate ion and ammonium ion,
The cleaning system according to claim 1, wherein at least one of the sulfate ion and the ammonium ion remains on the surface of the dried object to be processed. A detector for detecting a component contained in the atmosphere inside the container;
The cleaning system according to claim 6, wherein the detection unit detects at least one of the sulfate ions and the ammonium ions desorbed from the object to be processed.   The plasma processing apparatus according to any one of claims 4 to 7, wherein the process gas includes at least one of oxygen gas, a mixed gas including oxygen gas, hydrogen gas, and a mixed gas including hydrogen gas. Supplying a first solution to the workpiece;
Supplying a second solution to the workpiece to which the first solution is supplied;
Drying the object to be treated supplied with the second solution;
Heating the dried object to be processed in an atmosphere containing a predetermined gas and depressurized from atmospheric pressure;
Cleaning method with.   The cleaning method according to claim 9, further comprising a step of supplying the second solution to the heated object to be processed. Supplying a first solution to the workpiece;
Supplying a second solution to the workpiece to which the first solution is supplied;
Drying the object to be treated supplied with the second solution;
Treating the dried object to be processed using a plasma product generated from a process gas containing at least one of oxygen atoms and hydrogen atoms;
Cleaning method with.   The cleaning method according to claim 11, further comprising a step of supplying the second solution to the object to be processed that has been processed using the plasma product. The first solution contains at least one of sulfate ion and ammonium ion,
The cleaning method according to claim 9, wherein at least one of the sulfate ion and the ammonium ion remains on the surface of the dried object to be processed.   The cleaning method according to claim 13, further comprising a step of detecting at least one of the sulfate ions and the ammonium ions desorbed from the object to be processed.

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