TWI785550B - 含新穎磨料之ｃｍｐ組合物及方法 - Google Patents

含新穎磨料之ｃｍｐ組合物及方法 Download PDF

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Publication number
TWI785550B
TWI785550B TW110111502A TW110111502A TWI785550B TW I785550 B TWI785550 B TW I785550B TW 110111502 A TW110111502 A TW 110111502A TW 110111502 A TW110111502 A TW 110111502A TW I785550 B TWI785550 B TW I785550B
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TW
Taiwan
Prior art keywords
colloidal silica
silica particles
composition
acid
particles
Prior art date
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TW110111502A
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English (en)
Chinese (zh)
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TW202142645A (zh
Inventor
亞歷山大 W 漢斯
金 龍
史帝芬 葛倫拜
羅曼 Ａ 伊瓦諾夫
凱文 P 達克利
班傑明 佩特洛
布萊恩 斯尼德
加琳娜 克里洛瓦
Original Assignee
美商Ｃｍｃ材料股份有限公司
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Publication of TW202142645A publication Critical patent/TW202142645A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/04—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in markedly acid liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW110111502A 2020-03-31 2021-03-30 含新穎磨料之ｃｍｐ組合物及方法 TWI785550B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063002743P 2020-03-31 2020-03-31
US63/002,743 2020-03-31

Publications (2)

Publication Number Publication Date
TW202142645A TW202142645A (zh) 2021-11-16
TWI785550B true TWI785550B (zh) 2022-12-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW110111502A TWI785550B (zh) 2020-03-31 2021-03-30 含新穎磨料之ｃｍｐ組合物及方法

Country Status (7)

Country Link
US (1) US11725116B2 (https=)
EP (1) EP4127089A4 (https=)
JP (1) JP7775213B2 (https=)
KR (1) KR20220156953A (https=)
CN (1) CN115298276B (https=)
TW (1) TWI785550B (https=)
WO (1) WO2021202500A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI898375B (zh) * 2023-02-14 2025-09-21 南韓商Ｓｋ恩普士股份有限公司 半導體製程用拋光組成物及使用其的基板的製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023102392A1 (en) * 2021-12-02 2023-06-08 Versum Materials Us, Llc Tungsten chemical mechanical polishing slurries
KR102771385B1 (ko) * 2021-12-23 2025-02-26 주식회사 케이씨텍 연마 슬러리 조성물
KR20250069933A (ko) * 2022-09-22 2025-05-20 씨엠씨 머티리얼즈 엘엘씨 황 함유 음이온성 계면활성제를 포함하는 텅스텐 cmp 조성물
KR102911808B1 (ko) * 2023-08-02 2026-01-12 한양대학교 산학협력단 금속막질 연마용 슬러리 조성물
WO2026024912A1 (en) * 2024-07-23 2026-01-29 Entegris, Inc. Compositions for chemical mechanical planarization and related systems and related methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI561619B (en) * 2014-03-24 2016-12-11 Cabot Microelectronics Corp Mixed abrasive tungsten cmp composition
TWI683895B (zh) * 2015-02-19 2020-02-01 日商福吉米股份有限公司 矽晶圓研磨用組成物及研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
JP4231632B2 (ja) * 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303190B2 (en) * 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP6412714B2 (ja) 2014-04-16 2018-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
KR101741707B1 (ko) 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
TWI723284B (zh) * 2017-09-15 2021-04-01 美商Ｃｍｃ材料股份有限公司 鎢化學機械拋光(cmp)之組合物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI561619B (en) * 2014-03-24 2016-12-11 Cabot Microelectronics Corp Mixed abrasive tungsten cmp composition
TWI683895B (zh) * 2015-02-19 2020-02-01 日商福吉米股份有限公司 矽晶圓研磨用組成物及研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI898375B (zh) * 2023-02-14 2025-09-21 南韓商Ｓｋ恩普士股份有限公司 半導體製程用拋光組成物及使用其的基板的製造方法

Also Published As

Publication number Publication date
JP7775213B2 (ja) 2025-11-25
CN115298276A (zh) 2022-11-04
KR20220156953A (ko) 2022-11-28
WO2021202500A1 (en) 2021-10-07
JP2023520875A (ja) 2023-05-22
US11725116B2 (en) 2023-08-15
EP4127089A1 (en) 2023-02-08
TW202142645A (zh) 2021-11-16
US20210301178A1 (en) 2021-09-30
CN115298276B (zh) 2024-07-30
EP4127089A4 (en) 2024-04-24

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