JP7775213B2 - 新規の研磨剤を含むcmp組成物 - Google Patents

新規の研磨剤を含むcmp組成物

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Publication number
JP7775213B2
JP7775213B2 JP2022559399A JP2022559399A JP7775213B2 JP 7775213 B2 JP7775213 B2 JP 7775213B2 JP 2022559399 A JP2022559399 A JP 2022559399A JP 2022559399 A JP2022559399 A JP 2022559399A JP 7775213 B2 JP7775213 B2 JP 7775213B2
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JP
Japan
Prior art keywords
colloidal silica
silica particles
composition
acid
particle size
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JP2022559399A
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English (en)
Japanese (ja)
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JP2023520875A5 (https=
JP2023520875A (ja
Inventor
ダブリュ.ヘインズ アレクサンダー
ロング キム
グラムビン スティーブン
エー.イバノブ ローマン
ピー.ドッカリー ケビン
ペトロ ベンジャミン
スニード ブライアン
クリロバ ガリナ
Original Assignee
シーエムシー マテリアルズ リミティド ライアビリティ カンパニー
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Publication of JP2023520875A publication Critical patent/JP2023520875A/ja
Publication of JP2023520875A5 publication Critical patent/JP2023520875A5/ja
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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/26Acidic compositions for etching refractory metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/04Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in markedly acid liquids
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2022559399A 2020-03-31 2021-03-30 新規の研磨剤を含むcmp組成物 Active JP7775213B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063002743P 2020-03-31 2020-03-31
US63/002,743 2020-03-31
PCT/US2021/024844 WO2021202500A1 (en) 2020-03-31 2021-03-30 Cmp composition including a novel abrasive

Publications (3)

Publication Number Publication Date
JP2023520875A JP2023520875A (ja) 2023-05-22
JP2023520875A5 JP2023520875A5 (https=) 2024-04-10
JP7775213B2 true JP7775213B2 (ja) 2025-11-25

Family

ID=77855591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022559399A Active JP7775213B2 (ja) 2020-03-31 2021-03-30 新規の研磨剤を含むcmp組成物

Country Status (7)

Country Link
US (1) US11725116B2 (https=)
EP (1) EP4127089A4 (https=)
JP (1) JP7775213B2 (https=)
KR (1) KR20220156953A (https=)
CN (1) CN115298276B (https=)
TW (1) TWI785550B (https=)
WO (1) WO2021202500A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023102392A1 (en) * 2021-12-02 2023-06-08 Versum Materials Us, Llc Tungsten chemical mechanical polishing slurries
KR102771385B1 (ko) * 2021-12-23 2025-02-26 주식회사 케이씨텍 연마 슬러리 조성물
KR20250069933A (ko) * 2022-09-22 2025-05-20 씨엠씨 머티리얼즈 엘엘씨 황 함유 음이온성 계면활성제를 포함하는 텅스텐 cmp 조성물
KR20240126662A (ko) * 2023-02-14 2024-08-21 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 연마방법
KR102911808B1 (ko) * 2023-08-02 2026-01-12 한양대학교 산학협력단 금속막질 연마용 슬러리 조성물
WO2026024912A1 (en) * 2024-07-23 2026-01-29 Entegris, Inc. Compositions for chemical mechanical planarization and related systems and related methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002327170A (ja) 2001-04-27 2002-11-15 Kao Corp 研磨液組成物
JP2015203108A (ja) 2014-04-16 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016132676A1 (ja) 2015-02-19 2016-08-25 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物および研磨方法
JP2016160435A (ja) 2015-02-27 2016-09-05 ユービーマテリアルズ インコーポレイテッド 研磨スラリー及びこれを用いた基板の研磨方法
JP2017515302A (ja) 2014-03-24 2017-06-08 キャボット マイクロエレクトロニクス コーポレイション 混合研磨剤タングステンcmp組成物
US20190085209A1 (en) 2017-09-15 2019-03-21 Cabot Microelectronics Corporation Composition for tungsten cmp

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303190B2 (en) * 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002327170A (ja) 2001-04-27 2002-11-15 Kao Corp 研磨液組成物
JP2017515302A (ja) 2014-03-24 2017-06-08 キャボット マイクロエレクトロニクス コーポレイション 混合研磨剤タングステンcmp組成物
JP2015203108A (ja) 2014-04-16 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
WO2016132676A1 (ja) 2015-02-19 2016-08-25 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物および研磨方法
JP2016160435A (ja) 2015-02-27 2016-09-05 ユービーマテリアルズ インコーポレイテッド 研磨スラリー及びこれを用いた基板の研磨方法
US20190085209A1 (en) 2017-09-15 2019-03-21 Cabot Microelectronics Corporation Composition for tungsten cmp

Also Published As

Publication number Publication date
TWI785550B (zh) 2022-12-01
CN115298276A (zh) 2022-11-04
KR20220156953A (ko) 2022-11-28
WO2021202500A1 (en) 2021-10-07
JP2023520875A (ja) 2023-05-22
US11725116B2 (en) 2023-08-15
EP4127089A1 (en) 2023-02-08
TW202142645A (zh) 2021-11-16
US20210301178A1 (en) 2021-09-30
CN115298276B (zh) 2024-07-30
EP4127089A4 (en) 2024-04-24

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