KR20220156953A - 신규 연마재를 포함하는 cmp 조성물 - Google Patents

신규 연마재를 포함하는 cmp 조성물 Download PDF

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Publication number
KR20220156953A
KR20220156953A KR1020227037590A KR20227037590A KR20220156953A KR 20220156953 A KR20220156953 A KR 20220156953A KR 1020227037590 A KR1020227037590 A KR 1020227037590A KR 20227037590 A KR20227037590 A KR 20227037590A KR 20220156953 A KR20220156953 A KR 20220156953A
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KR
South Korea
Prior art keywords
colloidal silica
silica particles
acid
composition
particle size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227037590A
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English (en)
Korean (ko)
Inventor
알렉산더 더블유 헤인스
킴 롱
스티븐 그럼빈
로만 에이 이바노프
케빈 피 도커리
벤자민 페트로
브라이언 스니드
갈리나 크릴로바
Original Assignee
씨엠씨 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 씨엠씨 머티리얼즈, 인코포레이티드 filed Critical 씨엠씨 머티리얼즈, 인코포레이티드
Publication of KR20220156953A publication Critical patent/KR20220156953A/ko
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/04—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in markedly acid liquids
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1020227037590A 2020-03-31 2021-03-30 신규 연마재를 포함하는 cmp 조성물 Pending KR20220156953A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063002743P 2020-03-31 2020-03-31
US63/002,743 2020-03-31
PCT/US2021/024844 WO2021202500A1 (en) 2020-03-31 2021-03-30 Cmp composition including a novel abrasive

Publications (1)

Publication Number Publication Date
KR20220156953A true KR20220156953A (ko) 2022-11-28

Family

ID=77855591

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227037590A Pending KR20220156953A (ko) 2020-03-31 2021-03-30 신규 연마재를 포함하는 cmp 조성물

Country Status (7)

Country Link
US (1) US11725116B2 (https=)
EP (1) EP4127089A4 (https=)
JP (1) JP7775213B2 (https=)
KR (1) KR20220156953A (https=)
CN (1) CN115298276B (https=)
TW (1) TWI785550B (https=)
WO (1) WO2021202500A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025029063A1 (ko) * 2023-08-02 2025-02-06 한양대학교 산학협력단 금속막질 연마용 슬러리 조성물

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023102392A1 (en) * 2021-12-02 2023-06-08 Versum Materials Us, Llc Tungsten chemical mechanical polishing slurries
KR102771385B1 (ko) * 2021-12-23 2025-02-26 주식회사 케이씨텍 연마 슬러리 조성물
KR20250069933A (ko) * 2022-09-22 2025-05-20 씨엠씨 머티리얼즈 엘엘씨 황 함유 음이온성 계면활성제를 포함하는 텅스텐 cmp 조성물
KR20240126662A (ko) * 2023-02-14 2024-08-21 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 연마방법
WO2026024912A1 (en) * 2024-07-23 2026-01-29 Entegris, Inc. Compositions for chemical mechanical planarization and related systems and related methods

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
JP4231632B2 (ja) * 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303190B2 (en) * 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP6412714B2 (ja) 2014-04-16 2018-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP3261114B1 (en) * 2015-02-19 2021-01-13 Fujimi Incorporated Composition for silicon wafer polishing and polishing method
KR101741707B1 (ko) 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
TWI723284B (zh) * 2017-09-15 2021-04-01 美商Ｃｍｃ材料股份有限公司 鎢化學機械拋光(cmp)之組合物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025029063A1 (ko) * 2023-08-02 2025-02-06 한양대학교 산학협력단 금속막질 연마용 슬러리 조성물
KR20250019830A (ko) * 2023-08-02 2025-02-11 한양대학교 산학협력단 금속막질 연마용 슬러리 조성물

Also Published As

Publication number Publication date
JP7775213B2 (ja) 2025-11-25
TWI785550B (zh) 2022-12-01
CN115298276A (zh) 2022-11-04
WO2021202500A1 (en) 2021-10-07
JP2023520875A (ja) 2023-05-22
US11725116B2 (en) 2023-08-15
EP4127089A1 (en) 2023-02-08
TW202142645A (zh) 2021-11-16
US20210301178A1 (en) 2021-09-30
CN115298276B (zh) 2024-07-30
EP4127089A4 (en) 2024-04-24

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