TWI782959B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI782959B
TWI782959B TW107108189A TW107108189A TWI782959B TW I782959 B TWI782959 B TW I782959B TW 107108189 A TW107108189 A TW 107108189A TW 107108189 A TW107108189 A TW 107108189A TW I782959 B TWI782959 B TW I782959B
Authority
TW
Taiwan
Prior art keywords
metal film
polysilicon
semiconductor device
circuit element
voltage dividing
Prior art date
Application number
TW107108189A
Other languages
English (en)
Chinese (zh)
Other versions
TW201834200A (zh
Inventor
長谷川尚
Original Assignee
日商艾普凌科有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商艾普凌科有限公司 filed Critical 日商艾普凌科有限公司
Publication of TW201834200A publication Critical patent/TW201834200A/zh
Application granted granted Critical
Publication of TWI782959B publication Critical patent/TWI782959B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
TW107108189A 2017-03-14 2018-03-12 半導體裝置 TWI782959B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-048801 2017-03-14
JP2017048801 2017-03-14
JP2017-215445 2017-11-08
JP2017215445A JP7010668B2 (ja) 2017-03-14 2017-11-08 半導体装置

Publications (2)

Publication Number Publication Date
TW201834200A TW201834200A (zh) 2018-09-16
TWI782959B true TWI782959B (zh) 2022-11-11

Family

ID=63680515

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107108189A TWI782959B (zh) 2017-03-14 2018-03-12 半導體裝置

Country Status (3)

Country Link
JP (1) JP7010668B2 (ko)
KR (1) KR20180105080A (ko)
TW (1) TWI782959B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7115951B2 (ja) * 2018-09-28 2022-08-09 エイブリック株式会社 半導体装置及びその製造方法
WO2023112551A1 (ja) * 2021-12-17 2023-06-22 ローム株式会社 半導体装置およびその製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5530418A (en) * 1995-07-26 1996-06-25 Taiwan Semiconductor Manufacturing Company Method for shielding polysilicon resistors from hydrogen intrusion
US6232194B1 (en) * 1999-11-05 2001-05-15 Taiwan Semiconductor Manufacturing Company Silicon nitride capped poly resistor with SAC process
TW200507177A (en) * 2003-06-11 2005-02-16 Ricoh Co Ltd Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same
US20060035421A1 (en) * 2002-03-25 2006-02-16 Hisashi Hasegawa Semiconductor device and method therefore
JP2006332428A (ja) * 2005-05-27 2006-12-07 Seiko Instruments Inc 半導体集積回路装置
US20070128790A1 (en) * 2004-09-30 2007-06-07 Masanori Dainin Semiconductor device and fabrication process thereof
TW201709482A (zh) * 2009-10-21 2017-03-01 半導體能源研究所股份有限公司 半導體裝置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3195828B2 (ja) * 1992-08-31 2001-08-06 三菱電機株式会社 半導体装置
JP3526701B2 (ja) * 1995-08-24 2004-05-17 セイコーインスツルメンツ株式会社 半導体装置
JP2004281966A (ja) * 2003-03-19 2004-10-07 Ricoh Co Ltd 半導体装置及び半導体装置の製造方法
JP2006032585A (ja) * 2004-07-15 2006-02-02 Seiko Instruments Inc 半導体集積回路装置
JP2010016059A (ja) * 2008-07-01 2010-01-21 Seiko Instruments Inc 半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5530418A (en) * 1995-07-26 1996-06-25 Taiwan Semiconductor Manufacturing Company Method for shielding polysilicon resistors from hydrogen intrusion
US6232194B1 (en) * 1999-11-05 2001-05-15 Taiwan Semiconductor Manufacturing Company Silicon nitride capped poly resistor with SAC process
US20060035421A1 (en) * 2002-03-25 2006-02-16 Hisashi Hasegawa Semiconductor device and method therefore
TW200507177A (en) * 2003-06-11 2005-02-16 Ricoh Co Ltd Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same
US20070128790A1 (en) * 2004-09-30 2007-06-07 Masanori Dainin Semiconductor device and fabrication process thereof
JP2006332428A (ja) * 2005-05-27 2006-12-07 Seiko Instruments Inc 半導体集積回路装置
TW201709482A (zh) * 2009-10-21 2017-03-01 半導體能源研究所股份有限公司 半導體裝置

Also Published As

Publication number Publication date
TW201834200A (zh) 2018-09-16
JP7010668B2 (ja) 2022-01-26
KR20180105080A (ko) 2018-09-27
JP2018152545A (ja) 2018-09-27

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