TWI780668B - 用於半導體複合裝置之模組 - Google Patents

用於半導體複合裝置之模組 Download PDF

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Publication number
TWI780668B
TWI780668B TW110113930A TW110113930A TWI780668B TW I780668 B TWI780668 B TW I780668B TW 110113930 A TW110113930 A TW 110113930A TW 110113930 A TW110113930 A TW 110113930A TW I780668 B TWI780668 B TW I780668B
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TW
Taiwan
Prior art keywords
capacitor
hole
anode plate
hole conductor
layer
Prior art date
Application number
TW110113930A
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English (en)
Chinese (zh)
Other versions
TW202205608A (zh
Inventor
大谷慎士
髙橋章友
坂井貴昭
古川剛史
北村達矢
Original Assignee
日商村田製作所股份有限公司
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Publication of TW202205608A publication Critical patent/TW202205608A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H01G9/012—Terminals specially adapted for solid capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dc-Dc Converters (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
TW110113930A 2020-05-28 2021-04-19 用於半導體複合裝置之模組 TWI780668B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2020-093536 2020-05-28
JP2020093536 2020-05-28

Publications (2)

Publication Number Publication Date
TW202205608A TW202205608A (zh) 2022-02-01
TWI780668B true TWI780668B (zh) 2022-10-11

Family

ID=78744755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110113930A TWI780668B (zh) 2020-05-28 2021-04-19 用於半導體複合裝置之模組

Country Status (6)

Country Link
US (2) US12482732B2 (https=)
EP (1) EP4123673B1 (https=)
JP (2) JP7143966B2 (https=)
CN (2) CN114902363B (https=)
TW (1) TWI780668B (https=)
WO (1) WO2021241325A1 (https=)

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KR20220146500A (ko) * 2020-02-06 2022-11-01 사라스 마이크로 디바이스 인크. 적층 및 임베딩을 위한 평면 고밀도 알루미늄 커패시터
US12136615B2 (en) * 2021-11-30 2024-11-05 Qorvo Us, Inc. Electronic package with interposer between integrated circuit dies
CN114937603A (zh) * 2022-03-25 2022-08-23 珠海越亚半导体股份有限公司 具有滤波功能的导通基板、载板布线结构及其制作方法
CN119173972A (zh) * 2022-05-13 2024-12-20 株式会社村田制作所 电容器
WO2023238528A1 (ja) * 2022-06-09 2023-12-14 株式会社村田製作所 コンデンサアレイ
WO2024185587A1 (ja) * 2023-03-09 2024-09-12 株式会社村田製作所 コンデンサ内蔵基板
JP7816563B2 (ja) * 2023-03-09 2026-02-18 株式会社村田製作所 コンデンサ内蔵基板
CN120752718A (zh) * 2023-03-10 2025-10-03 株式会社村田制作所 电容器元件
WO2024214424A1 (ja) * 2023-04-14 2024-10-17 株式会社村田製作所 コンデンサ素子
TWI885959B (zh) * 2023-07-28 2025-06-01 日商村田製作所股份有限公司 內建電容器之基板
WO2025069676A1 (ja) * 2023-09-29 2025-04-03 株式会社村田製作所 コンデンサ素子
US12191346B1 (en) * 2024-05-17 2025-01-07 Saras Micro Devices, Inc. Selective area metal process for improved metallurgical bonding of aluminum to copper for integrated passive devices in a semiconductor device

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JP2007173439A (ja) * 2005-12-21 2007-07-05 Matsushita Electric Ind Co Ltd コンデンサ内蔵基板
TW200840191A (en) * 2007-03-27 2008-10-01 Alpha & Omega Semiconductor Chip scale power converter package having an inductor substrate
TW201138052A (en) * 2009-08-21 2011-11-01 Murata Manufacturing Co ESD protection device
TW201733280A (zh) * 2015-12-28 2017-09-16 高通公司 使用整合2ｄ被動玻璃上濾波器及3ｄ貫通玻璃通孔濾波器之多工器設計
US20170316885A1 (en) * 2012-09-28 2017-11-02 Panasonic Intellectual Property Management Co., Ltd. Solid electrolytic capacitor and production method therefor
US20190244764A1 (en) * 2016-10-06 2019-08-08 Murata Manufacturing Co., Ltd. Solid electrolytic capacitor
TW201939711A (zh) * 2017-12-27 2019-10-01 日商村田製作所股份有限公司 半導體複合裝置及用於其之封裝基板

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JP2004281750A (ja) 2003-03-17 2004-10-07 Nippon Chemicon Corp 固体電解コンデンサアレイ
JP4323303B2 (ja) * 2003-12-17 2009-09-02 株式会社フジクラ 基板の製造方法
JP5374814B2 (ja) * 2006-09-20 2013-12-25 富士通株式会社 キャパシタ内蔵型配線基板およびその製造方法
US8264846B2 (en) * 2006-12-14 2012-09-11 Intel Corporation Ceramic package substrate with recessed device
KR100861619B1 (ko) 2007-05-07 2008-10-07 삼성전기주식회사 방열 인쇄회로기판 및 그 제조방법
US8161609B2 (en) * 2008-05-21 2012-04-24 Intel Corporation Methods of fabricating an array capacitor
CN102379037B (zh) * 2009-03-30 2015-08-19 高通股份有限公司 使用顶部后钝化技术和底部结构技术的集成电路芯片
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JP5585426B2 (ja) 2010-12-07 2014-09-10 Ｔｄｋ株式会社 配線板、電子部品内蔵基板、配線板の製造方法及び電子部品内蔵基板の製造方法
JP7151764B2 (ja) * 2018-06-11 2022-10-12 株式会社村田製作所 コンデンサアレイ、複合電子部品、コンデンサアレイの製造方法、及び、複合電子部品の製造方法
US11302619B2 (en) * 2019-10-01 2022-04-12 Advanced Semiconductor Engineering, Inc. Device structure and method for manufacturing the same

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Publication number Priority date Publication date Assignee Title
JP2007173439A (ja) * 2005-12-21 2007-07-05 Matsushita Electric Ind Co Ltd コンデンサ内蔵基板
TW200840191A (en) * 2007-03-27 2008-10-01 Alpha & Omega Semiconductor Chip scale power converter package having an inductor substrate
TW201138052A (en) * 2009-08-21 2011-11-01 Murata Manufacturing Co ESD protection device
US20170316885A1 (en) * 2012-09-28 2017-11-02 Panasonic Intellectual Property Management Co., Ltd. Solid electrolytic capacitor and production method therefor
TW201733280A (zh) * 2015-12-28 2017-09-16 高通公司 使用整合2ｄ被動玻璃上濾波器及3ｄ貫通玻璃通孔濾波器之多工器設計
US20190244764A1 (en) * 2016-10-06 2019-08-08 Murata Manufacturing Co., Ltd. Solid electrolytic capacitor
TW201939711A (zh) * 2017-12-27 2019-10-01 日商村田製作所股份有限公司 半導體複合裝置及用於其之封裝基板

Also Published As

Publication number Publication date
JP7143966B2 (ja) 2022-09-29
US20220278035A1 (en) 2022-09-01
JP2022172255A (ja) 2022-11-15
JPWO2021241325A1 (https=) 2021-12-02
JP7384251B2 (ja) 2023-11-21
WO2021241325A1 (ja) 2021-12-02
CN119012906A (zh) 2024-11-22
CN114902363A (zh) 2022-08-12
EP4123673B1 (en) 2025-07-30
TW202205608A (zh) 2022-02-01
EP4123673A1 (en) 2023-01-25
US20260053021A1 (en) 2026-02-19
CN114902363B (zh) 2024-08-20
US12482732B2 (en) 2025-11-25
EP4123673A4 (en) 2024-07-03

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