TWI766085B - 離子植入用含銻材料 - Google Patents
離子植入用含銻材料 Download PDFInfo
- Publication number
- TWI766085B TWI766085B TW107129327A TW107129327A TWI766085B TW I766085 B TWI766085 B TW I766085B TW 107129327 A TW107129327 A TW 107129327A TW 107129327 A TW107129327 A TW 107129327A TW I766085 B TWI766085 B TW I766085B
- Authority
- TW
- Taiwan
- Prior art keywords
- antimony
- containing material
- storage
- delivery
- moisture
- Prior art date
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- 239000000463 material Substances 0.000 title claims abstract description 180
- 229910052787 antimony Inorganic materials 0.000 title claims abstract description 55
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000005468 ion implantation Methods 0.000 title claims description 49
- 238000003860 storage Methods 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 80
- 150000002500 ions Chemical class 0.000 claims description 78
- 239000012071 phase Substances 0.000 claims description 64
- 239000007788 liquid Substances 0.000 claims description 40
- 150000001875 compounds Chemical class 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 239000007791 liquid phase Substances 0.000 claims description 18
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 claims description 17
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical compound F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 claims description 17
- 229910052736 halogen Inorganic materials 0.000 claims description 14
- 150000002367 halogens Chemical class 0.000 claims description 14
- 238000002513 implantation Methods 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910001439 antimony ion Inorganic materials 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000003463 adsorbent Substances 0.000 claims description 5
- 230000001351 cycling effect Effects 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract description 34
- 229910052799 carbon Inorganic materials 0.000 abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 14
- 239000007943 implant Substances 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 3
- 239000007787 solid Substances 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 16
- 238000010884 ion-beam technique Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000605 extraction Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- -1 Sb + or Sb2 + Chemical class 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 7
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 6
- 239000011344 liquid material Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000002939 deleterious effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002594 sorbent Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018287 SbF 5 Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 1
- GUNJVIDCYZYFGV-UHFFFAOYSA-K antimony trifluoride Chemical compound F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012621 metal-organic framework Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000037351 starvation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0036—Flash degasification
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2270/00—Applications
- F17C2270/05—Applications for industrial use
- F17C2270/0518—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Polyesters Or Polycarbonates (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762548688P | 2017-08-22 | 2017-08-22 | |
| US62/548,688 | 2017-08-22 | ||
| US16/106,197 | 2018-08-21 | ||
| US16/106,197 US10597773B2 (en) | 2017-08-22 | 2018-08-21 | Antimony-containing materials for ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201912584A TW201912584A (zh) | 2019-04-01 |
| TWI766085B true TWI766085B (zh) | 2022-06-01 |
Family
ID=65434870
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107129327A TWI766085B (zh) | 2017-08-22 | 2018-08-22 | 離子植入用含銻材料 |
| TW108111248A TWI838362B (zh) | 2017-08-22 | 2019-03-29 | 低於大氣壓之儲存和輸送槽、其製備方法及其使用方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108111248A TWI838362B (zh) | 2017-08-22 | 2019-03-29 | 低於大氣壓之儲存和輸送槽、其製備方法及其使用方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10597773B2 (ko) |
| EP (3) | EP3673503A1 (ko) |
| JP (3) | JP7014888B2 (ko) |
| KR (3) | KR102277836B1 (ko) |
| CN (2) | CN111033679B (ko) |
| SG (2) | SG11202001466QA (ko) |
| TW (2) | TWI766085B (ko) |
| WO (1) | WO2019040554A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
| TWI767255B (zh) | 2019-07-18 | 2022-06-11 | 美商恩特葛瑞斯股份有限公司 | 將離子物種植入至一基板中之方法與系統 |
| JP2023520933A (ja) * | 2020-05-11 | 2023-05-22 | プラクスエア・テクノロジー・インコーポレイテッド | イオン注入器へのアンチモン含有材料の貯蔵及び送達 |
| CN117431624B (zh) * | 2023-12-20 | 2024-03-26 | 苏州焜原光电有限公司 | 一种分子束外延生长方法及气态锑源供给装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051096A1 (en) * | 1999-12-13 | 2005-03-10 | Semequip, Inc. | Ion implantation ion source, system and method |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2058453A (en) * | 1933-10-07 | 1936-10-27 | Kinetic Chemicals Inc | Fluorination process and apparatus |
| US4022592A (en) * | 1975-10-14 | 1977-05-10 | Mcdonnell Douglas Corporation | Liquid degassing device |
| US4588609A (en) | 1984-11-26 | 1986-05-13 | Leyden Richard N | Process for the photochemical vapor deposition of aromatic polymers |
| JPS6240377A (ja) * | 1985-08-15 | 1987-02-21 | Semiconductor Energy Lab Co Ltd | 窒化アンチモンの作製方法 |
| JPH0782119B2 (ja) * | 1987-08-03 | 1995-09-06 | 三菱電機株式会社 | イオンビーム照射方法 |
| JPH0765169B2 (ja) * | 1993-01-14 | 1995-07-12 | 東京エレクトロン株式会社 | イオン生成方法 |
| US6204180B1 (en) | 1997-05-16 | 2001-03-20 | Advanced Technology Materials, Inc. | Apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing sorbent-based fluid storage and dispensing system for reagent delivery |
| US5518528A (en) | 1994-10-13 | 1996-05-21 | Advanced Technology Materials, Inc. | Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds |
| US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
| US5857889A (en) * | 1996-03-27 | 1999-01-12 | Thermoceramix, Llc | Arc Chamber for an ion implantation system |
| US6146608A (en) | 1997-11-24 | 2000-11-14 | Advanced Technology Materials, Inc. | Stable hydride source compositions for manufacture of semiconductor devices and structures |
| US6005127A (en) | 1997-11-24 | 1999-12-21 | Advanced Technology Materials, Inc. | Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films |
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US6122931A (en) * | 1998-04-07 | 2000-09-26 | American Air Liquide Inc. | System and method for delivery of a vapor phase product to a point of use |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| CN1076634C (zh) | 1998-08-27 | 2001-12-26 | 中国石油化工集团公司 | 一种制备负载型固体超强酸的方法 |
| US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
| US6443435B1 (en) * | 2000-10-23 | 2002-09-03 | Applied Materials, Inc. | Vaporization of precursors at point of use |
| US6576909B2 (en) * | 2001-02-28 | 2003-06-10 | International Business Machines Corp. | Ion generation chamber |
| CN101908473B (zh) * | 2002-06-26 | 2013-03-13 | 山米奎普公司 | 通过植入n-及p-型簇离子及负离子制造cmos器件的方法 |
| US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US7172646B2 (en) * | 2003-04-15 | 2007-02-06 | Air Products And Chemicals, Inc. | Reactive liquid based gas storage and delivery systems |
| US7261118B2 (en) * | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
| KR101160642B1 (ko) * | 2003-12-12 | 2012-06-28 | 세미이큅, 인코포레이티드 | 고체로부터 승화된 증기의 유동제어 |
| GB2412488B (en) * | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
| US7638058B2 (en) * | 2005-04-07 | 2009-12-29 | Matheson Tri-Gas | Fluid storage and purification method and system |
| US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| WO2009102762A2 (en) * | 2008-02-11 | 2009-08-20 | Sweeney Joseph D | Ion source cleaning in semiconductor processing systems |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| DE102010056519A1 (de) | 2010-12-27 | 2012-06-28 | Heliatek Gmbh | Optoelektronisches Bauelement mit dotierten Schichten |
| JP5990202B2 (ja) | 2011-02-28 | 2016-09-07 | ウィリアム・マーシュ・ライス・ユニバーシティ | ドープした多層カーボンナノチューブファイバーおよびその製造方法 |
| US8883620B1 (en) * | 2013-04-24 | 2014-11-11 | Praxair Technology, Inc. | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
| CN105190826B (zh) | 2013-05-02 | 2019-02-15 | 普莱克斯技术有限公司 | 用于富硒离子注入的供应源和方法 |
| US9165773B2 (en) | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
| US9852887B2 (en) * | 2013-08-23 | 2017-12-26 | Advanced Ion Beam Technology, Inc. | Ion source of an ion implanter |
| US9929014B2 (en) | 2013-11-27 | 2018-03-27 | Entegris, Inc. | Dopant precursors for mono-layer doping |
| CN103728157A (zh) | 2013-12-25 | 2014-04-16 | 福建省邵武市永晶化工有限公司 | 一种五氟化碘或五氟化锑的取样系统 |
| US9570271B2 (en) * | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
| TWI674614B (zh) * | 2014-10-27 | 2019-10-11 | 美商恩特葛瑞斯股份有限公司 | 離子佈植方法及設備 |
| US9909670B2 (en) | 2015-03-04 | 2018-03-06 | Praxair Technology, Inc. | Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems |
| EP3188214A1 (en) * | 2015-12-29 | 2017-07-05 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
| US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
| US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
-
2018
- 2018-08-21 US US16/106,197 patent/US10597773B2/en active Active
- 2018-08-22 SG SG11202001466QA patent/SG11202001466QA/en unknown
- 2018-08-22 TW TW107129327A patent/TWI766085B/zh active
- 2018-08-22 KR KR1020207007430A patent/KR102277836B1/ko active IP Right Grant
- 2018-08-22 EP EP18765517.0A patent/EP3673503A1/en active Pending
- 2018-08-22 JP JP2020508473A patent/JP7014888B2/ja active Active
- 2018-08-22 CN CN201880053287.0A patent/CN111033679B/zh active Active
- 2018-08-22 WO PCT/US2018/047417 patent/WO2019040554A1/en unknown
-
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- 2019-02-22 US US16/283,027 patent/US10711343B2/en active Active
- 2019-03-26 EP EP19165099.3A patent/EP3699317B1/en active Active
- 2019-03-26 EP EP21203490.4A patent/EP3960897A1/en active Pending
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- 2019-04-17 CN CN201910307927.2A patent/CN111613505B/zh active Active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051096A1 (en) * | 1999-12-13 | 2005-03-10 | Semequip, Inc. | Ion implantation ion source, system and method |
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