JP7273088B2 - イオン注入のためのアンチモン含有材料 - Google Patents
イオン注入のためのアンチモン含有材料 Download PDFInfo
- Publication number
- JP7273088B2 JP7273088B2 JP2021053687A JP2021053687A JP7273088B2 JP 7273088 B2 JP7273088 B2 JP 7273088B2 JP 2021053687 A JP2021053687 A JP 2021053687A JP 2021053687 A JP2021053687 A JP 2021053687A JP 7273088 B2 JP7273088 B2 JP 7273088B2
- Authority
- JP
- Japan
- Prior art keywords
- antimony
- source
- storage
- ion implantation
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims description 176
- 229910052787 antimony Inorganic materials 0.000 title claims description 59
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims description 59
- 238000005468 ion implantation Methods 0.000 title description 51
- 150000002500 ions Chemical class 0.000 claims description 79
- 239000007789 gas Substances 0.000 claims description 73
- 239000012071 phase Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 26
- 239000012808 vapor phase Substances 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 19
- 239000007791 liquid phase Substances 0.000 claims description 19
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000003860 storage Methods 0.000 description 63
- 239000007788 liquid Substances 0.000 description 38
- 239000002019 doping agent Substances 0.000 description 34
- 239000007787 solid Substances 0.000 description 23
- 229910052799 carbon Inorganic materials 0.000 description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 21
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 description 19
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical compound F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 16
- 229910052736 halogen Inorganic materials 0.000 description 15
- 150000002367 halogens Chemical class 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- 239000000126 substance Substances 0.000 description 10
- 239000003463 adsorbent Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 239000007943 implant Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- -1 Sb + or Sb 2+ Chemical class 0.000 description 6
- 229910001439 antimony ion Inorganic materials 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000001627 detrimental effect Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910018287 SbF 5 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000074 antimony hydride Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012621 metal-organic framework Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0036—Flash degasification
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2270/00—Applications
- F17C2270/05—Applications for industrial use
- F17C2270/0518—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Polyesters Or Polycarbonates (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
本発明に関連して、以下の内容を更に開示する。
[1]
アンチモン含有イオンを注入してn型電子デバイス構造を生じさせるためのイオン注入に好適な組成物であって、
アンチモン含有材料であって、前記アンチモン含有材料が、周囲温度にて化学的に安定しており、かつ準大気圧下で、液相の貯蔵条件下で維持され、更に、前記貯蔵条件が、微量の水分の欠如を特徴とする、アンチモン含有材料を含み、
前記アンチモン含有材料が、非炭素含有化学式によって表され、
前記液相の前記アンチモン含有材料が、下流の真空圧力条件に応答して十分な蒸気圧を及ぼすように適合された、対応する気相と実質的な平衡状態にある液相である、組成物。
[2]
水素含有化合物を更に含み、更に、前記水素含有化合物が、ハロゲンサイクルを軽減するための有効量である、[1]に記載の組成物。
[3]
前記アンチモン含有材料が、SbF 5 である、[1]に記載の組成物。
[4]
前記Sb含有ドーパント材料が、約50ppm以下の水分を含む、[1]に記載の組成物。
[5]
前記Sb含有材料が、SbF 5 であり、前記SbF 5 が、約10トールの蒸気圧で、摂氏約25にて、液体として維持される、[1]に記載の組成物。
[6]
アンチモンイオンを注入してn型電子デバイス構造を生じさせるためのイオン注入に好適な組成物のための準大気圧貯蔵及び送達容器であって、
アンチモン含有材料であって、前記アンチモン含有材料が、周囲温度にて化学的に安定している、アンチモン含有材料を含み、
前記アンチモン含有材料が、非炭素含有化学式によって表され、
前記微量の水分の欠如を特徴とする水分なしの環境によって少なくとも部分的に定義される貯蔵及び送達容器であって、前記貯蔵及び送達容器が、準大気圧条件下で液相の前記アンチモン含有材料を保持するように構成され、それにより、前記液相が、前記貯蔵及び送達容器のヘッドスペースを占有する、対応する気相と実質的な平衡状態である、貯蔵及び送達容器を備える、準大気圧貯蔵及び送達容器。
[7]
前記貯蔵及び送達容器と機械的に連通する二重ポート弁アセンブリを更に備え、前記二重ポート弁が、注入ポート弁と、排出ポート弁と、を備え、前記注入ポート弁が、その内部に前記アンチモン含有材料を導入するために、前記貯蔵及び送達容器の内部と流体連通しており、前記排出ポート弁が、前記貯蔵及び送達容器の内部から外部へと延在する流れ排出経路と流体連通して、そこから前記アンチモン含有材料の前記対応する気相を排出する、[6]に記載の準大気貯蔵及び送達システム。
[8]
前記アンチモン含有材料が、約760トール以下の蒸気圧を有する約20~25℃の液体として貯蔵される、[1]に記載の準大気圧貯蔵及び送達容器。
[9]
前記流れ排出経路に沿って逆止め弁を更に備え、更に、前記貯蔵及び送達容器が、約760トール以下の下流側圧力に応答して、前記アンチモン含有材料の前記対応する気相を前記貯蔵及び送達容器の前記ヘッドスペースから分配するように構成される、[6]に記載の準大気圧貯蔵及び送達容器。
[10]
単一の供給源の一部として前記アンチモン含有材料と混合される、又はキットの一部として別体の容器内に貯蔵される、水素含有化合物を更に含む、[6]に記載の準大気圧貯蔵及び送達容器。
[11]
Sb含有イオンを注入するためのイオン源を操作する方法であって、
少なくとも約0.1sccm以上の流量で気相のアンチモン含有材料をアークチャンバ内へ導入することと、
前記組成物をイオン化して、前記アークチャンバ内にSb含有イオンを生成することと、
前記Sb含有イオンを基材内に注入することと、を含む、方法。
[12]
前記グリッチ速度が、約50時間のイオン源寿命にわたって1分当たり約1グリッチ以下である、請求項11に記載の方法。
[13]
有効量の水素含有化合物を前記アークチャンバ内に導入することを更に含む、[11]に記載の方法。
[14]
前記気相で貯蔵されているときの前記アンチモン含有組成物が、前記気相の加熱のない状態で前記アークチャンバに提供される、[11]に記載の方法。
[15]
前記イオン源を操作する前記方法の間に、前記アンチモン含有組成物の蒸発速度を維持して、少なくとも約0.1sccm以上の流量で前記気相を生成することを更に含む、[11]に記載の方法。
[16]
摂氏約65を超えないように前記気相の前記アンチモン含有材料の温度を維持することを更に含む、[11]に記載の方法。
[17]
約50~150Vのアーク電圧で前記イオン源を操作することを更に含む、[11]に記載の方法。
[18]
約150V未満のアーク電圧でアンチモン含有イオン注入を実行するように構成され、前記イオン源が、気相の少なくとも約0.1sccmのアンチモン含有組成物を受容するように適合される、イオン源装置。
[19]
少なくとも約50時間の供給源の寿命の間、1分当たり約1グリッチ以下の平均グリッチ速度を更に含む、[18]に記載のイオン源装置。
[20]
アンチモンイオンを注入してn型電子デバイス構造を生じさせるためのイオン注入に好適な組成物のための準大気圧貯蔵及び送達のための送達可能な吸着容量を含む吸着材であって、前記組成物が、アンチモン含有材料を含み、前記アンチモン含有材料が、周囲温度にて化学的に安定しており、
前記アンチモン含有材料が、非炭素含有化学式によって表され、
前記吸着剤が、約50ppm以下の水分を有する水分なしの環境を有する、吸着材。
Claims (5)
- Sb含有イオンを注入するためのイオン源を操作する方法であって、
少なくとも0.1sccm以上の流量で気相のアンチモン含有材料をアークチャンバ内へ導入することと、
前記組成物をイオン化して、前記アークチャンバ内にSb含有イオンを生成することと、
前記Sb含有イオンを基材内に注入することと、を含み、
グリッチ率が、50時間のイオン源寿命にわたって1分当たり1グリッチ以下であり、
前記気相で貯蔵されているときの前記アンチモン含有組成物が、前記気相の加熱のない状態で前記アークチャンバに提供され、
気相のアンチモン含有材料を液相からの蒸発によって生成する、
前記方法。 - 有効量の水素含有化合物を前記アークチャンバ内に導入することを更に含む、請求項1に記載の方法。
- 前記イオン源を操作する前記方法の間に、前記アンチモン含有組成物の蒸発速度を維持して、少なくとも0.1sccm以上の流量で前記気相を生成することを更に含む、請求項1に記載の方法。
- 摂氏65℃を超えないように前記気相の前記アンチモン含有材料の温度を維持することを更に含む、請求項1に記載の方法。
- 50~150Vのアーク電圧で前記イオン源を操作することを更に含む、請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762548688P | 2017-08-22 | 2017-08-22 | |
US62/548,688 | 2017-08-22 | ||
US16/106,197 | 2018-08-21 | ||
US16/106,197 US10597773B2 (en) | 2017-08-22 | 2018-08-21 | Antimony-containing materials for ion implantation |
JP2020508473A JP7014888B2 (ja) | 2017-08-22 | 2018-08-22 | イオン注入のためのアンチモン含有材料 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020508473A Division JP7014888B2 (ja) | 2017-08-22 | 2018-08-22 | イオン注入のためのアンチモン含有材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021114467A JP2021114467A (ja) | 2021-08-05 |
JP7273088B2 true JP7273088B2 (ja) | 2023-05-12 |
Family
ID=65434870
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020508473A Active JP7014888B2 (ja) | 2017-08-22 | 2018-08-22 | イオン注入のためのアンチモン含有材料 |
JP2019079833A Active JP6846458B2 (ja) | 2017-08-22 | 2019-04-19 | イオン注入器へのアンチモン含有材料の貯蔵及び送達 |
JP2021053687A Active JP7273088B2 (ja) | 2017-08-22 | 2021-03-26 | イオン注入のためのアンチモン含有材料 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020508473A Active JP7014888B2 (ja) | 2017-08-22 | 2018-08-22 | イオン注入のためのアンチモン含有材料 |
JP2019079833A Active JP6846458B2 (ja) | 2017-08-22 | 2019-04-19 | イオン注入器へのアンチモン含有材料の貯蔵及び送達 |
Country Status (8)
Country | Link |
---|---|
US (2) | US10597773B2 (ja) |
EP (3) | EP3673503A1 (ja) |
JP (3) | JP7014888B2 (ja) |
KR (3) | KR102277836B1 (ja) |
CN (2) | CN111033679B (ja) |
SG (2) | SG11202001466QA (ja) |
TW (2) | TWI766085B (ja) |
WO (1) | WO2019040554A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
WO2021011143A1 (en) | 2019-07-18 | 2021-01-21 | Entegris, Inc. | Ion implantation system with mixture of arc chamber materials |
CN115485047A (zh) * | 2020-05-11 | 2022-12-16 | 普莱克斯技术有限公司 | 将含锑材料储存和输送到离子注入机 |
CN117431624B (zh) * | 2023-12-20 | 2024-03-26 | 苏州焜原光电有限公司 | 一种分子束外延生长方法及气态锑源供给装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001501772A (ja) | 1996-10-04 | 2001-02-06 | アボツト,リチヤード・シー | イオン填め込み装置のためのアーク室 |
JP2010161072A (ja) | 2003-12-12 | 2010-07-22 | Semequip Inc | 固体から昇華した蒸気の流れの制御 |
JP2010232668A (ja) | 2002-06-26 | 2010-10-14 | Semequip Inc | N及びp型クラスターイオン及び陰イオンの注入によるcmos素子の製造方法 |
JP2013127976A (ja) | 1999-12-13 | 2013-06-27 | Semequip Inc | イオン注入イオン源、システム、および方法 |
JP2015026623A (ja) | 2008-02-11 | 2015-02-05 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムにおけるイオン源の洗浄 |
JP2016104912A (ja) | 2002-07-23 | 2016-06-09 | インテグリス・インコーポレーテッド | 蒸発器配送アンプル |
JP2017120755A (ja) | 2014-03-03 | 2017-07-06 | プラクスエア・テクノロジー・インコーポレイテッド | ホウ素イオン注入中のイオン・ビーム電流及びパフォーマンスを向上させるためのホウ素含有ドーパント組成物、システム及びこれらの使用方法 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2058453A (en) * | 1933-10-07 | 1936-10-27 | Kinetic Chemicals Inc | Fluorination process and apparatus |
US4022592A (en) * | 1975-10-14 | 1977-05-10 | Mcdonnell Douglas Corporation | Liquid degassing device |
US4588609A (en) | 1984-11-26 | 1986-05-13 | Leyden Richard N | Process for the photochemical vapor deposition of aromatic polymers |
JPS6240377A (ja) * | 1985-08-15 | 1987-02-21 | Semiconductor Energy Lab Co Ltd | 窒化アンチモンの作製方法 |
JPH0782119B2 (ja) * | 1987-08-03 | 1995-09-06 | 三菱電機株式会社 | イオンビーム照射方法 |
JPH0765169B2 (ja) * | 1993-01-14 | 1995-07-12 | 東京エレクトロン株式会社 | イオン生成方法 |
US5518528A (en) | 1994-10-13 | 1996-05-21 | Advanced Technology Materials, Inc. | Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds |
US6204180B1 (en) | 1997-05-16 | 2001-03-20 | Advanced Technology Materials, Inc. | Apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing sorbent-based fluid storage and dispensing system for reagent delivery |
US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
US6005127A (en) | 1997-11-24 | 1999-12-21 | Advanced Technology Materials, Inc. | Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films |
US6146608A (en) | 1997-11-24 | 2000-11-14 | Advanced Technology Materials, Inc. | Stable hydride source compositions for manufacture of semiconductor devices and structures |
US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
US6122931A (en) * | 1998-04-07 | 2000-09-26 | American Air Liquide Inc. | System and method for delivery of a vapor phase product to a point of use |
US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
CN1076634C (zh) | 1998-08-27 | 2001-12-26 | 中国石油化工集团公司 | 一种制备负载型固体超强酸的方法 |
US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
US6443435B1 (en) * | 2000-10-23 | 2002-09-03 | Applied Materials, Inc. | Vaporization of precursors at point of use |
US6576909B2 (en) * | 2001-02-28 | 2003-06-10 | International Business Machines Corp. | Ion generation chamber |
US7172646B2 (en) * | 2003-04-15 | 2007-02-06 | Air Products And Chemicals, Inc. | Reactive liquid based gas storage and delivery systems |
US7261118B2 (en) * | 2003-08-19 | 2007-08-28 | Air Products And Chemicals, Inc. | Method and vessel for the delivery of precursor materials |
GB2412488B (en) * | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
US7638058B2 (en) * | 2005-04-07 | 2009-12-29 | Matheson Tri-Gas | Fluid storage and purification method and system |
US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
DE102010056519A1 (de) | 2010-12-27 | 2012-06-28 | Heliatek Gmbh | Optoelektronisches Bauelement mit dotierten Schichten |
WO2012118836A1 (en) | 2011-02-28 | 2012-09-07 | William Marsh Rice University | Doped multiwalled carbon nanotube fibers and methods of making the same |
US8883620B1 (en) * | 2013-04-24 | 2014-11-11 | Praxair Technology, Inc. | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
US9257286B2 (en) | 2013-05-02 | 2016-02-09 | Praxair Technology, Inc. | Supply source and method for enriched selenium ion implantation |
US9165773B2 (en) * | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
US9852887B2 (en) * | 2013-08-23 | 2017-12-26 | Advanced Ion Beam Technology, Inc. | Ion source of an ion implanter |
WO2015080985A1 (en) | 2013-11-27 | 2015-06-04 | Entegris, Inc. | Dopant precursors for mono-layer doping |
CN103728157A (zh) | 2013-12-25 | 2014-04-16 | 福建省邵武市永晶化工有限公司 | 一种五氟化碘或五氟化锑的取样系统 |
CN107004550B (zh) | 2014-10-27 | 2019-04-02 | 恩特格里斯公司 | 离子植入工艺及设备 |
US9909670B2 (en) | 2015-03-04 | 2018-03-06 | Praxair Technology, Inc. | Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems |
EP3188214A1 (en) | 2015-12-29 | 2017-07-05 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
-
2018
- 2018-08-21 US US16/106,197 patent/US10597773B2/en active Active
- 2018-08-22 SG SG11202001466QA patent/SG11202001466QA/en unknown
- 2018-08-22 EP EP18765517.0A patent/EP3673503A1/en active Pending
- 2018-08-22 KR KR1020207007430A patent/KR102277836B1/ko active IP Right Grant
- 2018-08-22 TW TW107129327A patent/TWI766085B/zh active
- 2018-08-22 CN CN201880053287.0A patent/CN111033679B/zh active Active
- 2018-08-22 JP JP2020508473A patent/JP7014888B2/ja active Active
- 2018-08-22 WO PCT/US2018/047417 patent/WO2019040554A1/en unknown
-
2019
- 2019-02-22 US US16/283,027 patent/US10711343B2/en active Active
- 2019-03-26 EP EP19165099.3A patent/EP3699317B1/en active Active
- 2019-03-26 EP EP21203490.4A patent/EP3960897A1/en active Pending
- 2019-03-29 TW TW108111248A patent/TWI838362B/zh active
- 2019-04-17 CN CN201910307927.2A patent/CN111613505B/zh active Active
- 2019-04-19 JP JP2019079833A patent/JP6846458B2/ja active Active
- 2019-04-23 SG SG10201903654SA patent/SG10201903654SA/en unknown
- 2019-04-23 KR KR1020190047372A patent/KR102443890B1/ko active IP Right Grant
-
2021
- 2021-03-26 JP JP2021053687A patent/JP7273088B2/ja active Active
- 2021-10-25 KR KR1020210142571A patent/KR102562632B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001501772A (ja) | 1996-10-04 | 2001-02-06 | アボツト,リチヤード・シー | イオン填め込み装置のためのアーク室 |
JP2013127976A (ja) | 1999-12-13 | 2013-06-27 | Semequip Inc | イオン注入イオン源、システム、および方法 |
JP2010232668A (ja) | 2002-06-26 | 2010-10-14 | Semequip Inc | N及びp型クラスターイオン及び陰イオンの注入によるcmos素子の製造方法 |
JP2016104912A (ja) | 2002-07-23 | 2016-06-09 | インテグリス・インコーポレーテッド | 蒸発器配送アンプル |
JP2010161072A (ja) | 2003-12-12 | 2010-07-22 | Semequip Inc | 固体から昇華した蒸気の流れの制御 |
JP2015026623A (ja) | 2008-02-11 | 2015-02-05 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 半導体処理システムにおけるイオン源の洗浄 |
JP2017120755A (ja) | 2014-03-03 | 2017-07-06 | プラクスエア・テクノロジー・インコーポレイテッド | ホウ素イオン注入中のイオン・ビーム電流及びパフォーマンスを向上させるためのホウ素含有ドーパント組成物、システム及びこれらの使用方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20210133183A (ko) | 2021-11-05 |
US20190062901A1 (en) | 2019-02-28 |
US20190185988A1 (en) | 2019-06-20 |
CN111033679A (zh) | 2020-04-17 |
SG11202001466QA (en) | 2020-03-30 |
JP2021114467A (ja) | 2021-08-05 |
JP7014888B2 (ja) | 2022-02-01 |
TW202032609A (zh) | 2020-09-01 |
CN111613505B (zh) | 2023-06-30 |
KR102277836B1 (ko) | 2021-07-14 |
KR20200035151A (ko) | 2020-04-01 |
SG10201903654SA (en) | 2020-09-29 |
CN111613505A (zh) | 2020-09-01 |
CN111033679B (zh) | 2021-11-23 |
EP3960897A1 (en) | 2022-03-02 |
JP6846458B2 (ja) | 2021-03-24 |
EP3699317A1 (en) | 2020-08-26 |
JP2020136653A (ja) | 2020-08-31 |
EP3673503A1 (en) | 2020-07-01 |
US10597773B2 (en) | 2020-03-24 |
JP2020529519A (ja) | 2020-10-08 |
US10711343B2 (en) | 2020-07-14 |
TW201912584A (zh) | 2019-04-01 |
TWI766085B (zh) | 2022-06-01 |
EP3699317B1 (en) | 2021-10-20 |
KR102443890B1 (ko) | 2022-09-16 |
TWI838362B (zh) | 2024-04-11 |
WO2019040554A1 (en) | 2019-02-28 |
KR20200102893A (ko) | 2020-09-01 |
KR102562632B1 (ko) | 2023-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7273088B2 (ja) | イオン注入のためのアンチモン含有材料 | |
TWI653669B (zh) | 離子植入組成、系統及方法 | |
US9165773B2 (en) | Aluminum dopant compositions, delivery package and method of use | |
US11098402B2 (en) | Storage and delivery of antimony-containing materials to an ion implanter | |
JP2023520933A (ja) | イオン注入器へのアンチモン含有材料の貯蔵及び送達 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210415 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220225 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220525 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220725 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220913 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221213 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230313 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230330 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230427 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7273088 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |