SG10201903654SA - Storage and delivery of antimony-containing materials to an ion implanter - Google Patents

Storage and delivery of antimony-containing materials to an ion implanter

Info

Publication number
SG10201903654SA
SG10201903654SA SG10201903654SA SG10201903654SA SG10201903654SA SG 10201903654S A SG10201903654S A SG 10201903654SA SG 10201903654S A SG10201903654S A SG 10201903654SA SG 10201903654S A SG10201903654S A SG 10201903654SA SG 10201903654S A SG10201903654S A SG 10201903654SA
Authority
SG
Singapore
Prior art keywords
antimony
delivery
storage
containing materials
ion implanter
Prior art date
Application number
SG10201903654SA
Inventor
Reinicker Aaron
K Sinha Ashwini
C Heiderman Douglas
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of SG10201903654SA publication Critical patent/SG10201903654SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D19/00—Degasification of liquids
    • B01D19/0036—Flash degasification
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2270/00—Applications
    • F17C2270/05—Applications for industrial use
    • F17C2270/0518—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Polyesters Or Polycarbonates (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
SG10201903654SA 2017-08-22 2019-04-23 Storage and delivery of antimony-containing materials to an ion implanter SG10201903654SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762548688P 2017-08-22 2017-08-22
US16/283,027 US10711343B2 (en) 2017-08-22 2019-02-22 Storage and delivery of antimony-containing materials to an ion implanter

Publications (1)

Publication Number Publication Date
SG10201903654SA true SG10201903654SA (en) 2020-09-29

Family

ID=65434870

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11202001466QA SG11202001466QA (en) 2017-08-22 2018-08-22 Antimony-containing materials for ion implantation
SG10201903654SA SG10201903654SA (en) 2017-08-22 2019-04-23 Storage and delivery of antimony-containing materials to an ion implanter

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11202001466QA SG11202001466QA (en) 2017-08-22 2018-08-22 Antimony-containing materials for ion implantation

Country Status (8)

Country Link
US (2) US10597773B2 (en)
EP (3) EP3673503A1 (en)
JP (3) JP7014888B2 (en)
KR (3) KR102277836B1 (en)
CN (2) CN111033679B (en)
SG (2) SG11202001466QA (en)
TW (1) TWI766085B (en)
WO (1) WO2019040554A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
TWI767255B (en) 2019-07-18 2022-06-11 美商恩特葛瑞斯股份有限公司 Method and system for implanting ioninc species into a substrate
CN115485047A (en) * 2020-05-11 2022-12-16 普莱克斯技术有限公司 Storing and transporting antimony-containing materials to an ion implanter
CN117431624B (en) * 2023-12-20 2024-03-26 苏州焜原光电有限公司 Molecular beam epitaxial growth method and gaseous antimony source supply device

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JPS6240377A (en) * 1985-08-15 1987-02-21 Semiconductor Energy Lab Co Ltd Production of antimony nitride
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Also Published As

Publication number Publication date
KR102277836B1 (en) 2021-07-14
TW201912584A (en) 2019-04-01
WO2019040554A1 (en) 2019-02-28
CN111033679B (en) 2021-11-23
CN111613505B (en) 2023-06-30
US20190062901A1 (en) 2019-02-28
TW202032609A (en) 2020-09-01
SG11202001466QA (en) 2020-03-30
KR102562632B1 (en) 2023-08-03
KR20200102893A (en) 2020-09-01
JP2020529519A (en) 2020-10-08
JP6846458B2 (en) 2021-03-24
CN111033679A (en) 2020-04-17
US10711343B2 (en) 2020-07-14
US10597773B2 (en) 2020-03-24
JP2020136653A (en) 2020-08-31
KR20200035151A (en) 2020-04-01
KR20210133183A (en) 2021-11-05
TWI766085B (en) 2022-06-01
EP3699317B1 (en) 2021-10-20
JP7273088B2 (en) 2023-05-12
EP3699317A1 (en) 2020-08-26
JP7014888B2 (en) 2022-02-01
KR102443890B1 (en) 2022-09-16
CN111613505A (en) 2020-09-01
EP3673503A1 (en) 2020-07-01
JP2021114467A (en) 2021-08-05
US20190185988A1 (en) 2019-06-20
EP3960897A1 (en) 2022-03-02

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