TWI762832B - 聲表面波器件 - Google Patents
聲表面波器件 Download PDFInfo
- Publication number
- TWI762832B TWI762832B TW108141644A TW108141644A TWI762832B TW I762832 B TWI762832 B TW I762832B TW 108141644 A TW108141644 A TW 108141644A TW 108141644 A TW108141644 A TW 108141644A TW I762832 B TWI762832 B TW I762832B
- Authority
- TW
- Taiwan
- Prior art keywords
- surface acoustic
- acoustic wave
- region
- electrode fingers
- bus bar
- Prior art date
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 174
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 105
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
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- 238000003780 insertion Methods 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- -1 PAiD Chemical compound 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14517—Means for weighting
- H03H9/1452—Means for weighting by finger overlap length, apodisation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14517—Means for weighting
- H03H9/14529—Distributed tap
- H03H9/14532—Series weighting; Transverse weighting
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/14552—Transducers of particular shape or position comprising split fingers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/1457—Transducers having different finger widths
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018215986A JP7178881B2 (ja) | 2018-11-16 | 2018-11-16 | 弾性表面波素子 |
| JP2018-215986 | 2018-11-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202021271A TW202021271A (zh) | 2020-06-01 |
| TWI762832B true TWI762832B (zh) | 2022-05-01 |
Family
ID=70726931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108141644A TWI762832B (zh) | 2018-11-16 | 2019-11-15 | 聲表面波器件 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11683019B2 (https=) |
| JP (2) | JP7178881B2 (https=) |
| CN (1) | CN111200415B (https=) |
| TW (1) | TWI762832B (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11323096B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
| US12170516B2 (en) | 2018-06-15 | 2024-12-17 | Murata Manufacturing Co., Ltd. | Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers |
| US12375056B2 (en) | 2018-06-15 | 2025-07-29 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators |
| US12095446B2 (en) | 2018-06-15 | 2024-09-17 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch |
| US12095441B2 (en) | 2018-06-15 | 2024-09-17 | Murata Manufacturing Co., Ltd. | Transversely excited film bulk acoustic resonator with recessed interdigital transducer fingers |
| US12244295B2 (en) | 2018-06-15 | 2025-03-04 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer |
| US11916539B2 (en) | 2020-02-28 | 2024-02-27 | Murata Manufacturing Co., Ltd. | Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators |
| US12218650B2 (en) | 2018-06-15 | 2025-02-04 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator |
| US11349452B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
| WO2020092414A2 (en) | 2018-10-31 | 2020-05-07 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator |
| JP2020145567A (ja) * | 2019-03-06 | 2020-09-10 | 株式会社村田製作所 | 弾性波装置 |
| CN118353412A (zh) | 2019-04-05 | 2024-07-16 | 株式会社村田制作所 | 横向激励薄膜体声波谐振器封装和方法 |
| CN113940000B (zh) * | 2019-06-14 | 2026-01-23 | 株式会社村田制作所 | 弹性波装置 |
| US11652466B2 (en) * | 2019-08-29 | 2023-05-16 | Skyworks Solutions, Inc. | Suppression of transverse mode spurious signals in surface acoustic wave devices utilizing a dense film above gap region of interdigital transducer electrodes |
| US11705883B2 (en) * | 2019-10-24 | 2023-07-18 | Skyworks Solutions, Inc. | Acoustic wave resonator with mass loading strip for suppression of transverse mode |
| US11936367B2 (en) | 2019-10-31 | 2024-03-19 | Skyworks Solutions, Inc. | Acoustic wave device with velocity reduction cover |
| US20210344322A1 (en) * | 2020-04-30 | 2021-11-04 | RF360 Europe GmbH | Surface acoustic wave electroacoustic device for reduced transversal modes |
| US10992282B1 (en) | 2020-06-18 | 2021-04-27 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with electrodes having a second layer of variable width |
| JP7499624B2 (ja) * | 2020-06-30 | 2024-06-14 | NDK SAW devices株式会社 | 弾性表面波素子 |
| US11742828B2 (en) | 2020-06-30 | 2023-08-29 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with symmetric diaphragm |
| US11405019B2 (en) | 2020-10-05 | 2022-08-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters |
| US11405017B2 (en) | 2020-10-05 | 2022-08-02 | Resonant Inc. | Acoustic matrix filters and radios using acoustic matrix filters |
| US12166468B2 (en) | 2021-01-15 | 2024-12-10 | Murata Manufacturing Co., Ltd. | Decoupled transversely-excited film bulk acoustic resonators for high power filters |
| US11239816B1 (en) | 2021-01-15 | 2022-02-01 | Resonant Inc. | Decoupled transversely-excited film bulk acoustic resonators |
| US12368431B2 (en) | 2021-02-22 | 2025-07-22 | Skyworks Solutions, Inc. | Acoustic wave filter with multiple acoustic wave devices on a subtrate |
| US12160220B2 (en) | 2021-04-30 | 2024-12-03 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with oxide strip acoustic confinement structures |
| US12255607B2 (en) | 2021-04-30 | 2025-03-18 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with buried oxide strip acoustic confinement structures |
| JP7627611B2 (ja) * | 2021-04-30 | 2025-02-06 | 太陽誘電株式会社 | 弾性波共振器、フィルタ、およびマルチプレクサ |
| US12255630B2 (en) | 2021-04-30 | 2025-03-18 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with oxide strip acoustic confinement structures |
| US12425000B2 (en) | 2021-08-03 | 2025-09-23 | Skyworks Solutions, Inc. | Low velocity surface acoustic wave device |
| CN113839648B (zh) * | 2021-09-14 | 2023-08-29 | 常州承芯半导体有限公司 | 声表面波谐振装置及形成方法、滤波装置及射频前端装置 |
| TWI789913B (zh) * | 2021-09-16 | 2023-01-11 | 台灣嘉碩科技股份有限公司 | 利用有效反射結構的表面聲波諧振器及濾波器 |
| CN118251837A (zh) * | 2021-11-12 | 2024-06-25 | 株式会社村田制作所 | 弹性波装置 |
| US12261591B2 (en) | 2021-12-21 | 2025-03-25 | Skyworks Solutions, Inc. | Temperature compensated surface acoustic wave devices with multiple buried mass loading strips |
| US12424999B2 (en) | 2021-12-28 | 2025-09-23 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with gap dielectric stripes in busbar-electrode gaps |
| US12413196B2 (en) | 2022-02-16 | 2025-09-09 | Murata Manufacturing Co., Ltd. | Tuning acoustic resonators with back-side coating |
| US12549151B2 (en) | 2022-04-12 | 2026-02-10 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with thick dielectric layer for improved coupling |
| CN119605084A (zh) * | 2022-08-26 | 2025-03-11 | 株式会社村田制作所 | 弹性波装置 |
| CN119605080A (zh) * | 2022-08-26 | 2025-03-11 | 株式会社村田制作所 | 弹性波装置 |
| CN115473506B (zh) * | 2022-09-16 | 2023-08-22 | 南通大学 | 一种减小声表面波器件体积的方法 |
| US12489415B2 (en) | 2022-10-19 | 2025-12-02 | Murata Manufacturing Co., Ltd. | Acoustic resonator lid for thermal transport |
| CN116208115A (zh) * | 2023-02-07 | 2023-06-02 | 锐石创芯(重庆)科技有限公司 | 弹性波装置、弹性波装置的制作方法、滤波器及电子设备 |
| CN117097295B (zh) * | 2023-10-17 | 2024-02-06 | 深圳新声半导体有限公司 | 声表面波谐振器装置及其制造方法、滤波器 |
| CN118971832A (zh) * | 2024-08-01 | 2024-11-15 | 无锡芯卓湖光半导体有限公司 | 电子设备、电子元器件、声表面波谐振器及其基底和制备方法 |
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| JP6415469B2 (ja) | 2016-03-22 | 2018-10-31 | 太陽誘電株式会社 | 弾性波共振器、フィルタおよびマルチプレクサ並びに弾性波共振器の製造方法 |
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| WO2018003282A1 (ja) | 2016-06-28 | 2018-01-04 | 株式会社村田製作所 | 弾性波装置 |
| JP6954799B2 (ja) * | 2017-10-20 | 2021-10-27 | 株式会社村田製作所 | 弾性波装置 |
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2018
- 2018-11-16 JP JP2018215986A patent/JP7178881B2/ja active Active
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2019
- 2019-11-13 CN CN201911104936.8A patent/CN111200415B/zh active Active
- 2019-11-15 TW TW108141644A patent/TWI762832B/zh active
- 2019-11-15 US US16/684,607 patent/US11683019B2/en active Active
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- 2022-06-29 JP JP2022104962A patent/JP7377920B2/ja active Active
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| US20130049533A1 (en) * | 2011-08-31 | 2013-02-28 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| US9712139B2 (en) * | 2013-05-29 | 2017-07-18 | Murata Manufacturing Co., Ltd. | Elastic wave filter device |
| US10009009B2 (en) * | 2013-05-29 | 2018-06-26 | Murata Manufacturing Co., Ltd. | Elastic wave device including electrode fingers with elongated sections |
| US20180309426A1 (en) * | 2015-10-20 | 2018-10-25 | Soitec | Surface acoustic wave device and associated production method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20200162052A1 (en) | 2020-05-21 |
| US11683019B2 (en) | 2023-06-20 |
| JP7377920B2 (ja) | 2023-11-10 |
| JP7178881B2 (ja) | 2022-11-28 |
| JP2022126852A (ja) | 2022-08-30 |
| JP2020088459A (ja) | 2020-06-04 |
| CN111200415A (zh) | 2020-05-26 |
| TW202021271A (zh) | 2020-06-01 |
| CN111200415B (zh) | 2024-05-10 |
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