TWI760471B - 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 - Google Patents

遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 Download PDF

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Publication number
TWI760471B
TWI760471B TW107111775A TW107111775A TWI760471B TW I760471 B TWI760471 B TW I760471B TW 107111775 A TW107111775 A TW 107111775A TW 107111775 A TW107111775 A TW 107111775A TW I760471 B TWI760471 B TW I760471B
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TW
Taiwan
Prior art keywords
film
mask
pattern
mentioned
light
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TW107111775A
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English (en)
Chinese (zh)
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TW201842402A (zh
Inventor
大久保亮
宍戸博明
打田崇
Original Assignee
日商Ｈｏｙａ股份有限公司
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Publication of TW201842402A publication Critical patent/TW201842402A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
TW107111775A 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法 TWI760471B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017077200A JP6808566B2 (ja) 2017-04-08 2017-04-08 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP2017-077200 2017-04-08

Publications (2)

Publication Number Publication Date
TW201842402A TW201842402A (zh) 2018-12-01
TWI760471B true TWI760471B (zh) 2022-04-11

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TW107111775A TWI760471B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法
TW111107820A TWI799164B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法

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TW111107820A TWI799164B (zh) 2017-04-08 2018-04-03 遮罩基底、轉印用遮罩之製造方法及半導體裝置之製造方法

Country Status (6)

Country Link
US (2) US11119400B2 (enExample)
JP (1) JP6808566B2 (enExample)
KR (1) KR102510830B1 (enExample)
SG (2) SG11201909351RA (enExample)
TW (2) TWI760471B (enExample)
WO (1) WO2018186320A1 (enExample)

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KR102429244B1 (ko) 2017-02-27 2022-08-05 호야 가부시키가이샤 마스크 블랭크 및 임프린트 몰드의 제조 방법
JP7231094B2 (ja) * 2018-12-12 2023-03-01 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP7313166B2 (ja) * 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP7638700B2 (ja) * 2020-12-24 2025-03-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN118201466B (zh) * 2024-05-20 2024-07-23 北京量子信息科学研究院 一种量子信息处理器件的制备方法及量子信息处理器件

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CN104903792A (zh) * 2013-01-15 2015-09-09 Hoya株式会社 掩膜板坯料、相移掩膜板及其制造方法
JP2015222448A (ja) * 2013-09-24 2015-12-10 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
TW201704847A (zh) * 2015-03-19 2017-02-01 Ｈｏｙａ股份有限公司 空白罩體、轉印用罩體、轉印用罩體之製造方法及半導體元件之製造方法
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Also Published As

Publication number Publication date
WO2018186320A1 (ja) 2018-10-11
KR102510830B1 (ko) 2023-03-17
SG11201909351RA (en) 2019-11-28
KR20190137790A (ko) 2019-12-11
TW202223532A (zh) 2022-06-16
US11435662B2 (en) 2022-09-06
US20210364910A1 (en) 2021-11-25
JP2018180170A (ja) 2018-11-15
US20210109436A1 (en) 2021-04-15
SG10202112818PA (en) 2021-12-30
TW201842402A (zh) 2018-12-01
JP6808566B2 (ja) 2021-01-06
TWI799164B (zh) 2023-04-11
US11119400B2 (en) 2021-09-14

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