TWI743020B - 用於大溫度範圍夾具之多流體冷卻系統 - Google Patents

用於大溫度範圍夾具之多流體冷卻系統 Download PDF

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Publication number
TWI743020B
TWI743020B TW104104357A TW104104357A TWI743020B TW I743020 B TWI743020 B TW I743020B TW 104104357 A TW104104357 A TW 104104357A TW 104104357 A TW104104357 A TW 104104357A TW I743020 B TWI743020 B TW I743020B
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TW
Taiwan
Prior art keywords
fluids
fluid
electrostatic
clamping system
temperature range
Prior art date
Application number
TW104104357A
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English (en)
Chinese (zh)
Other versions
TW201541551A (zh
Inventor
威廉 大衛斯 李
史帝夫 杜魯門
Original Assignee
美商艾克塞利斯科技公司
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Application filed by 美商艾克塞利斯科技公司 filed Critical 美商艾克塞利斯科技公司
Publication of TW201541551A publication Critical patent/TW201541551A/zh
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Publication of TWI743020B publication Critical patent/TWI743020B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW104104357A 2014-02-12 2015-02-10 用於大溫度範圍夾具之多流體冷卻系統 TWI743020B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/178,681 2014-02-12
US14/178,681 US20150228514A1 (en) 2014-02-12 2014-02-12 Multi Fluid Cooling System for Large Temperature Range Chuck

Publications (2)

Publication Number Publication Date
TW201541551A TW201541551A (zh) 2015-11-01
TWI743020B true TWI743020B (zh) 2021-10-21

Family

ID=52474123

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104104357A TWI743020B (zh) 2014-02-12 2015-02-10 用於大溫度範圍夾具之多流體冷卻系統

Country Status (6)

Country Link
US (1) US20150228514A1 (enExample)
JP (1) JP6590820B2 (enExample)
KR (1) KR102341279B1 (enExample)
CN (1) CN105981152B (enExample)
TW (1) TWI743020B (enExample)
WO (1) WO2015123105A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2017576A (en) 2015-10-06 2017-04-11 Asml Netherlands Bv Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
WO2017210178A1 (en) * 2016-06-02 2017-12-07 Axcelis Technologies, Inc. Apparatus and method for heating or cooling a wafer
US10509321B2 (en) * 2018-01-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature controlling apparatus and method for forming coating layer
CN111785674B (zh) * 2020-07-15 2023-09-08 北京北方华创微电子装备有限公司 一种半导体工艺设备
CN120565403A (zh) * 2021-03-17 2025-08-29 芝浦机械电子装置株式会社 加热处理装置及加热处理方法
KR102860524B1 (ko) * 2021-05-10 2025-09-15 어플라이드 머티어리얼스, 인코포레이티드 금속 매트릭스 복합재를 갖는 고온 서셉터
CN119446957B (zh) * 2023-08-04 2025-11-11 中微半导体设备(上海)股份有限公司 一种基座温度控制系统、控制方法及半导体处理设备

Citations (2)

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US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface

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JP2741906B2 (ja) * 1989-05-31 1998-04-22 株式会社日立製作所 真空処理方法及び装置
JPH03190125A (ja) * 1989-12-19 1991-08-20 Fujitsu Ltd ドライエッチング装置
JPH0737862A (ja) * 1991-07-08 1995-02-07 Fujitsu Ltd 低温処理装置
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
JPH11231946A (ja) * 1998-02-10 1999-08-27 Komatsu Ltd 多段蓄熱タンクの温度制御装置
US6922324B1 (en) * 2000-07-10 2005-07-26 Christopher M. Horwitz Remote powering of electrostatic chucks
JP3973853B2 (ja) * 2001-03-28 2007-09-12 大日本スクリーン製造株式会社 熱処理装置
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
US20070091540A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
JP5032269B2 (ja) * 2007-11-02 2012-09-26 東京エレクトロン株式会社 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置
JP2009177070A (ja) * 2008-01-28 2009-08-06 Toshiba Corp 半導体製造装置
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP5519992B2 (ja) * 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
US8410393B2 (en) * 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
JP5912439B2 (ja) * 2011-11-15 2016-04-27 東京エレクトロン株式会社 温度制御システム、半導体製造装置及び温度制御方法
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JP5951384B2 (ja) * 2012-07-20 2016-07-13 東京エレクトロン株式会社 温度制御システムへの温調流体供給方法及び記憶媒体
KR101975007B1 (ko) * 2018-09-19 2019-05-07 (주)본씨앤아이 반도체 설비 냉각용 냉각 시스템

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface

Also Published As

Publication number Publication date
WO2015123105A1 (en) 2015-08-20
KR102341279B1 (ko) 2021-12-20
CN105981152A (zh) 2016-09-28
TW201541551A (zh) 2015-11-01
CN105981152B (zh) 2019-11-01
JP6590820B2 (ja) 2019-10-16
JP2017506828A (ja) 2017-03-09
US20150228514A1 (en) 2015-08-13
KR20160122766A (ko) 2016-10-24

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