JP6590820B2 - 広温度範囲チャックに対する複数流体冷却システム - Google Patents

広温度範囲チャックに対する複数流体冷却システム Download PDF

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Publication number
JP6590820B2
JP6590820B2 JP2016551295A JP2016551295A JP6590820B2 JP 6590820 B2 JP6590820 B2 JP 6590820B2 JP 2016551295 A JP2016551295 A JP 2016551295A JP 2016551295 A JP2016551295 A JP 2016551295A JP 6590820 B2 JP6590820 B2 JP 6590820B2
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Japan
Prior art keywords
fluid
electrostatic
fluids
electrostatic chuck
temperature range
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Expired - Fee Related
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JP2016551295A
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Japanese (ja)
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JP2017506828A5 (enExample
JP2017506828A (ja
Inventor
デイビス リー，ウィリアム
デイビス リー，ウィリアム
ドラモンド，スティーブ
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016551295A 2014-02-12 2015-02-06 広温度範囲チャックに対する複数流体冷却システム Expired - Fee Related JP6590820B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/178,681 US20150228514A1 (en) 2014-02-12 2014-02-12 Multi Fluid Cooling System for Large Temperature Range Chuck
US14/178,681 2014-02-12
PCT/US2015/014793 WO2015123105A1 (en) 2014-02-12 2015-02-06 Multi fluid cooling system for large temperaure range chuck

Publications (3)

Publication Number Publication Date
JP2017506828A JP2017506828A (ja) 2017-03-09
JP2017506828A5 JP2017506828A5 (enExample) 2019-08-08
JP6590820B2 true JP6590820B2 (ja) 2019-10-16

Family

ID=52474123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551295A Expired - Fee Related JP6590820B2 (ja) 2014-02-12 2015-02-06 広温度範囲チャックに対する複数流体冷却システム

Country Status (6)

Country Link
US (1) US20150228514A1 (enExample)
JP (1) JP6590820B2 (enExample)
KR (1) KR102341279B1 (enExample)
CN (1) CN105981152B (enExample)
TW (1) TWI743020B (enExample)
WO (1) WO2015123105A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102756397B1 (ko) 2015-10-06 2025-01-16 에이에스엠엘 홀딩 엔.브이. 리소그래피 장치의 물체를 유지하는 척과 클램프 및 리소그래피 장치의 클램프에 의해 유지되는 물체의 온도를 제어하는 방법
WO2017210178A1 (en) * 2016-06-02 2017-12-07 Axcelis Technologies, Inc. Apparatus and method for heating or cooling a wafer
US10509321B2 (en) * 2018-01-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature controlling apparatus and method for forming coating layer
CN111785674B (zh) * 2020-07-15 2023-09-08 北京北方华创微电子装备有限公司 一种半导体工艺设备
CN115116887B (zh) * 2021-03-17 2025-08-19 芝浦机械电子装置株式会社 有机膜形成装置、及有机膜形成装置的清洁方法
CN117337482A (zh) * 2021-05-10 2024-01-02 应用材料公司 具有金属基质复合材料的高温基座

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741906B2 (ja) * 1989-05-31 1998-04-22 株式会社日立製作所 真空処理方法及び装置
JPH03190125A (ja) * 1989-12-19 1991-08-20 Fujitsu Ltd ドライエッチング装置
JPH0737862A (ja) * 1991-07-08 1995-02-07 Fujitsu Ltd 低温処理装置
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
WO1998005060A1 (en) * 1996-07-31 1998-02-05 The Board Of Trustees Of The Leland Stanford Junior University Multizone bake/chill thermal cycling module
JPH11231946A (ja) * 1998-02-10 1999-08-27 Komatsu Ltd 多段蓄熱タンクの温度制御装置
US6353210B1 (en) * 2000-04-11 2002-03-05 Applied Materials Inc. Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
US6922324B1 (en) * 2000-07-10 2005-07-26 Christopher M. Horwitz Remote powering of electrostatic chucks
JP3973853B2 (ja) * 2001-03-28 2007-09-12 大日本スクリーン製造株式会社 熱処理装置
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
US20070091541A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
JP5032269B2 (ja) * 2007-11-02 2012-09-26 東京エレクトロン株式会社 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置
JP2009177070A (ja) * 2008-01-28 2009-08-06 Toshiba Corp 半導体製造装置
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP5519992B2 (ja) * 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
US8410393B2 (en) * 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
JP5912439B2 (ja) * 2011-11-15 2016-04-27 東京エレクトロン株式会社 温度制御システム、半導体製造装置及び温度制御方法
JP5957248B2 (ja) * 2012-03-07 2016-07-27 株式会社アルバック 基板保持装置の再生方法
JP5951384B2 (ja) * 2012-07-20 2016-07-13 東京エレクトロン株式会社 温度制御システムへの温調流体供給方法及び記憶媒体
KR101975007B1 (ko) * 2018-09-19 2019-05-07 (주)본씨앤아이 반도체 설비 냉각용 냉각 시스템

Also Published As

Publication number Publication date
TW201541551A (zh) 2015-11-01
KR20160122766A (ko) 2016-10-24
CN105981152B (zh) 2019-11-01
WO2015123105A1 (en) 2015-08-20
TWI743020B (zh) 2021-10-21
KR102341279B1 (ko) 2021-12-20
CN105981152A (zh) 2016-09-28
JP2017506828A (ja) 2017-03-09
US20150228514A1 (en) 2015-08-13

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