JP6574020B2 - コンダクタンス制御を有する化学蒸着装置 - Google Patents
コンダクタンス制御を有する化学蒸着装置 Download PDFInfo
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- JP6574020B2 JP6574020B2 JP2018088156A JP2018088156A JP6574020B2 JP 6574020 B2 JP6574020 B2 JP 6574020B2 JP 2018088156 A JP2018088156 A JP 2018088156A JP 2018088156 A JP2018088156 A JP 2018088156A JP 6574020 B2 JP6574020 B2 JP 6574020B2
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- 238000005229 chemical vapour deposition Methods 0.000 title claims description 36
- 239000012530 fluid Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 54
- 238000004891 communication Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 50
- 239000000126 substance Substances 0.000 claims description 50
- 238000010926 purge Methods 0.000 claims description 42
- 230000003750 conditioning effect Effects 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 34
- 230000008021 deposition Effects 0.000 claims description 34
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 34
- 238000000429 assembly Methods 0.000 claims description 27
- 230000000712 assembly Effects 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 25
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 109
- 230000008569 process Effects 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 13
- 230000001105 regulatory effect Effects 0.000 description 11
- 230000001143 conditioned effect Effects 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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Description
[適用例1]化学蒸着装置であって、
化学的隔離チャンバと、
前記化学的隔離チャンバ内に形成された蒸着チャンバと、
フェースプレートおよびバッキングプレートを有すると共に、リアクタ化学物質を空洞に供給する複数の流入口と、リアクタ化学物質を除去する排気流出口とを備えたシャワーヘッドモジュールと、
前記排気流出口を介して前記空洞に流体連通する少なくとも1つのコンダクタンス制御アセンブリと
を備え、
前記少なくとも1つのコンダクタンス制御アセンブリには1または複数の排気真空ラインを介して排気装置が流体連通され、
前記少なくとも1つのコンダクタンス制御アセンブリは、
(a)ボールバルブアセンブリであって、
円錐形の下側部分を有するハウジングと、
前記ハウジングの前記円錐形の下側部分から前記空洞の前記排気流出口の内の1または複数まで伸び、流入口および流出口を有する導管と、
前記円錐形の下側部分内に収まるよう構成された球体と
を備え、
前記球体は、供給工程中には、前記導管の前記流出口を遮断して、前記導管を通して前記リアクタ化学物質が流れるのを防ぎ、パージ工程中には、前記空洞内で第1の圧力および流量を超えると、上昇して、前記球体の下面と、前記導管の前記流出口との間に開口部を提供することにより、前記リアクタ化学物質およびパージガスが前記空洞から前記1または複数の排気真空ラインに流れることを可能にするよう構成されているボールバルブアセンブリ、
(b)調整ガス部分およびチャンバ流出部分を有する流体バルブであって、前記調整ガス部分は、調整ガス供給部からの調整ガスの流れを前記空洞からのリアクタ化学物質の流れに向けるよう構成され、前記調整ガスの流れは、前記空洞からの前記リアクタ化学物質の前記流れによって経験される流れ抵抗を調整する流体バルブ、
(c)回転バルブであって、
上側回転プレートと、
前記上側回転プレートに磁気的に結合された下側回転プレートと
を備え、
前記下側回転プレートは、複数の導管を有し、前記複数の導管の各々は、前記空洞からのリアクタ化学物質を、前記排気流出口の内の1または複数と流体連通する前記シャワーヘッドモジュール内の対応する排気導管から受け入れるよう構成されている回転バルブ、および/または、
(d)磁気的に結合されたリニアバルブであって、
磁気ハウジングと、
複数の流路内で磁気的に上下されるよう構成された複数のリニアロッドであって、前記複数のリニアロッドの各々は、前記磁気ハウジング内で前記複数のリニアロッドを上下させる前記磁気ハウジングと磁気的に結合されるよう構成された近位部分と、前記リアクタ化学物質および/または前記パージガスを前記排気流出口から放出するためのバルブとして機能する遠位端とを有するリニアロッドと
を備えるリニアバルブ
の内の1または複数から選択される装置。
[適用例2]適用例1に記載の装置であって、
前記空洞から前記リアクタ化学物質をパージするために前記空洞に供給されるパージガスの供給源を備える装置。
[適用例3]適用例1に記載の装置であって、前記ボールバルブアセンブリの前記ハウジングは、前記1または複数の排気真空ラインと流体連通する上側部分を備える装置。
[適用例4]適用例1に記載の装置であって、前記ボールバルブアセンブリの前記球体は、前記供給工程中に、前記空洞内で前記第1の圧力および流量以下になった時に、前記導管の前記流出口を遮断するよう構成されている装置。
[適用例5]適用例1に記載の装置であって、
基板を支持するよう構成された台座モジュールを備え、
前記台座モジュールは、前記台座モジュールと、前記フェースプレートの外側部分との間の前記空洞を閉じるように垂直移動し、前記少なくとも1つのコンダクタンス制御アセンブリは、前記基板台座モジュールの周りで円周方向に均等に離間された複数のコンダクタンス制御アセンブリである装置。
[適用例6]適用例5に記載の装置であって、前記複数のコンダクタンス制御アセンブリの各々は、2以上の排気流出口と流体連通されるよう構成されている装置。
[適用例7]適用例1に記載の装置であって、前記ボールバルブアセンブリの前記球体は、耐腐食性材料で製造され、前記球体の重さおよびサイズは、前記空洞から前記リアクタ化学物質をパージする間のみ持ち上がるよう構成されている装置。
[適用例8]適用例1に記載の装置であって、
半導体基板を備え、
化学蒸着、プラズマ強化化学蒸着、原子層蒸着、プラズマ強化原子層蒸着、パルス蒸着層、および/または、プラズマ強化パルス蒸着層の内の少なくとも1つが、前記基板に実行される装置。
[適用例9]適用例1に記載の装置であって、前記流体バルブの調整ガスは、不活性ガスである装置。
[適用例10]適用例9に記載の装置であって、前記流体バルブの前記調整ガス部分は、前記調整ガス供給部から前記調整ガスを受け入れる調整流入口と、内部空洞と、少なくとも1つの流入口と、少なくとも1つの流出口とを有し、前記少なくとも1つの流出口は、前記調整ガスの流れを前記空洞からの前記リアクタ化学物質の流れに向けるよう構成されている装置。
[適用例11]適用例10に記載の装置であって、前記少なくとも1つの流入口および前記少なくとも1つの流出口は、前記流体バルブの前記調整ガス部分内の円筒孔であり、導管を形成する装置。
[適用例12]適用例1に記載の装置であって、前記流体素子の前記調整ガスおよび前記リアクタ化学物質は、前記1または複数の真空ガスラインと流体連通する空洞内で混合される装置。
[適用例13]適用例1に記載の装置であって、前記回転バルブの前記上側回転プレートおよび前記下側回転プレートは、磁気的に結合される装置。
[適用例14]適用例13に記載の装置であって、
前記上側回転プレートを回転させるための手段を備える装置。
[適用例15]適用例14に記載の装置であって、前記下側回転プレート内の前記複数の導管の各々は、前記下側回転プレートの下面上に流入口および上面上に流出口を有し、前記複数の排気導管の各々は、さらに、前記空洞と流体連通する流入口および前記下側回転プレートの前記流入口と流体連通する流出口を備える装置。
[適用例16]適用例15に記載の装置であって、前記下側回転プレートの前記流出口の各々は、前記1または複数の排気ガスラインと流体連通する内部空洞と流体連通する装置。
[適用例17]適用例1に記載の装置であって、前記排気流出口は、同心の排気流出口である装置。
[適用例18]適用例1に記載の装置であって、前記少なくとも1つのコンダクタンス制御アセンブリは、最小コンダクタンスから最大コンダクタンスまで3桁の範囲を有する装置。
[適用例19]化学蒸着装置の空洞内のコンダクタンスを制御する方法であって、
前記化学蒸着装置の前記空洞内で基板を処理する工程であって、前記空洞は、シャワーヘッドモジュールと、前記基板を受けるよう構成された基板台座モジュールとの間に形成され、前記シャワーヘッドモジュールは、リアクタ化学物質を前記空洞に供給する複数の流入口と、リアクタ化学物質およびパージガスを前記空洞から除去する排気流出口とを備える工程と、
パージガスを前記空洞内に注入する工程と、
前記排気流出口を介して前記空洞に流体連通する少なくとも1つのコンダクタンス制御アセンブリで、前記空洞のコンダクタンスの変化を制御する工程と
を備え、
前記少なくとも1つのコンダクタンス制御アセンブリは、
(a)ボールバルブアセンブリであって、
円錐形の下側部分を有するハウジングと、
前記ハウジングの前記円錐形の下側部分から前記空洞の前記排気流出口の内の1または複数まで伸び、流入口および流出口を有する導管と、
前記円錐形の下側部分内に収まるよう構成された球体と
を備え、
前記球体は、供給工程中には、前記導管の前記流出口を遮断して、前記導管を通して前記リアクタ化学物質が流れるのを防ぎ、パージ工程中には、前記空洞内で第1の圧力および流量を超えると、上昇して、前記球体の下面と、前記導管の前記流出口との間に開口部を提供することにより、前記リアクタ化学物質およびパージガスが前記空洞から前記1または複数の排気真空ラインに流れることを可能にするよう構成されているボールバルブアセンブリ、
(b)調整ガス部分およびチャンバ流出部分を有する流体バルブであって、前記調整ガス部分は、調整ガス供給部からの調整ガスの流れを前記空洞からのリアクタ化学物質の流れに向けるよう構成され、前記調整ガスの流れは、前記空洞からの前記リアクタ化学物質の前記流れによって経験される流れ抵抗を調整する流体バルブ、
(c)回転バルブであって、
上側回転プレートと、
前記上側回転プレートに磁気的に結合された下側回転プレートと
を備え、
前記下側回転プレートは、複数の導管を有し、前記複数の導管の各々は、前記空洞からのリアクタ化学物質を、前記排気流出口の内の1または複数と流体連通する前記シャワーヘッドモジュール内の対応する排気導管から受け入れるよう構成されている回転バルブ、および/または、
(d)磁気的に結合されたリニアバルブであって、
磁気ハウジングと、
複数の流路内で磁気的に上下されるよう構成された複数のリニアロッドであって、前記複数のリニアロッドの各々は、前記磁気ハウジング内で前記複数のリニアロッドを上下させる前記磁気ハウジングと磁気的に結合されるよう構成された近位部分と、前記リアクタ化学物質および/または前記パージガスを前記排気流出口から放出するためのバルブとして機能する遠位端とを有するリニアロッドと
を備えるリニアバルブ
の内の1または複数から選択される方法。
[適用例20]適用例19に記載の方法であって、
1または複数の排気真空ラインで前記少なくとも1つのコンダクタンス制御アセンブリを排気装置に接続する工程を備える方法。
Claims (9)
- 化学蒸着装置の空洞内のコンダクタンスを制御する方法であって、
前記化学蒸着装置の前記空洞内で基板を処理する工程であって、前記空洞は、シャワーヘッドモジュールと、前記基板を受けるよう構成された基板台座モジュールとの間に形成され、前記シャワーヘッドモジュールは、リアクタ化学物質を前記空洞に供給する複数の流入口と、リアクタ化学物質およびパージガスを前記空洞から除去する排気流出口とを備える工程と、
パージガスを前記空洞内に注入する工程と、
前記排気流出口を介して前記空洞に流体連通する少なくとも1つのコンダクタンス制御アセンブリで、前記空洞のコンダクタンスの変化を制御する工程と
を備え、
前記少なくとも1つのコンダクタンス制御アセンブリは、
(a)ボールバルブアセンブリであって、
円錐形の下側部分を有するハウジングと、
前記ハウジングの前記円錐形の下側部分から前記空洞の前記排気流出口の内の1または複数まで伸び、流入口および流出口を有する導管と、
前記円錐形の下側部分内に収まるよう構成された球体と
を備え、
前記球体は、供給工程中には、前記導管の前記流出口を遮断して、前記導管を通して前記リアクタ化学物質が流れるのを防ぎ、パージ工程中には、前記空洞内で第1の圧力および流量を超えると、上昇して、前記球体の下面と、前記導管の前記流出口との間に開口部を提供することにより、前記リアクタ化学物質およびパージガスが前記空洞から前記1または複数の排気真空ラインに流れることを可能にするよう構成されているボールバルブアセンブリ、
(b)調整ガス部分およびチャンバ流出部分を有する流体バルブであって、前記調整ガス部分は、調整ガス供給部からの調整ガスの流れを前記空洞からのリアクタ化学物質の流れに向けるよう構成され、前記調整ガスの流れは、前記空洞からの前記リアクタ化学物質の前記流れによって経験される流れ抵抗を調整する流体バルブ、
(c)回転バルブであって、
上側回転プレートと、
前記上側回転プレートに磁気的に結合された下側回転プレートと
を備え、
前記下側回転プレートは、複数の導管を有し、前記複数の導管の各々は、前記空洞からのリアクタ化学物質を、前記排気流出口の内の1または複数と流体連通する前記シャワーヘッドモジュール内の対応する排気導管から受け入れるよう構成されている回転バルブ、および/または、
(d)磁気的に結合されたリニアバルブであって、
磁気ハウジングと、
複数の流路内で磁気的に上下されるよう構成された複数のリニアロッドであって、前記複数のリニアロッドの各々は、前記磁気ハウジング内で前記複数のリニアロッドを上下させる前記磁気ハウジングと磁気的に結合されるよう構成された近位部分と、前記リアクタ化学物質および/または前記パージガスを前記排気流出口から放出するためのバルブとして機能する遠位端とを有するリニアロッドと
を備えるリニアバルブ
の内の1または複数から選択される方法。 - 請求項1に記載の方法であって、
1または複数の排気真空ラインで前記少なくとも1つのコンダクタンス制御アセンブリを排気装置に接続する工程を備える方法。 - 化学蒸着装置であって、
化学的隔離チャンバと、
前記化学的隔離チャンバ内に形成された蒸着チャンバと、
フェースプレートおよびバッキングプレートを有すると共に、前記フェースプレートが、リアクタ化学物質を空洞に供給する複数の流入口と、前記空洞の外縁から半径方向外向きに伸びる排気通路を経由して前記空洞から前記流入口と半径方向外向きにリアクタ化学物質を除去する排気流出口とを備えたシャワーヘッドモジュールと、
前記排気流出口を介して前記空洞に流体連通する少なくとも1つのコンダクタンス制御アセンブリと
を備え、
前記少なくとも1つのコンダクタンス制御アセンブリには1または複数の排気真空ラインを介して排気装置が流体連通され、
前記少なくとも1つのコンダクタンス制御アセンブリは、
磁気的に結合されたリニアバルブであって、
磁気ハウジングと、
前記1または複数の排気真空ラインを介して流体連通された複数の流路内で磁気的に上下されるよう構成された複数のリニアロッドであって、前記複数のリニアロッドの各々は、前記磁気ハウジング内で前記複数のリニアロッドを上下させる前記磁気ハウジングと磁気的に結合されるよう構成された近位部分と、前記リアクタ化学物質および/またはパージガスを前記排気流出口から放出するためのバルブとして機能する遠位端とを有するリニアロッドと
を備えるリニアバルブを備える装置。 - 請求項3に記載の装置であって、
前記空洞から前記リアクタ化学物質をパージするために前記空洞に供給されるパージガスの供給源を備える装置。 - 請求項3に記載の装置であって、
基板を支持するよう構成された台座モジュールを備え、
前記台座モジュールは、前記台座モジュールと、前記フェースプレートの外側部分との間の前記空洞を閉じるように垂直移動し、前記少なくとも1つのコンダクタンス制御アセンブリは、前記台座モジュールの周りで円周方向に均等に離間された複数のコンダクタンス制御アセンブリである装置。 - 請求項5に記載の装置であって、前記複数のコンダクタンス制御アセンブリの各々は、2以上の排気流出口と流体連通されるよう構成されている装置。
- 請求項3に記載の装置であって、
半導体基板を備え、
化学蒸着、プラズマ強化化学蒸着、原子層蒸着、プラズマ強化原子層蒸着、パルス蒸着層、および/または、プラズマ強化パルス蒸着層の内の少なくとも1つが、前記半導体基板に実行される装置。 - 請求項3に記載の装置であって、前記排気流出口は、同心の排気流出口である装置。
- 請求項3に記載の装置であって、前記少なくとも1つのコンダクタンス制御アセンブリは、最小コンダクタンスから最大コンダクタンスまで3桁の範囲を有する装置。
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TWI650444B (zh) | 2019-02-11 |
CN110158061B (zh) | 2021-06-18 |
KR102490167B1 (ko) | 2023-01-18 |
US20150011095A1 (en) | 2015-01-08 |
KR20210029176A (ko) | 2021-03-15 |
CN104278253B (zh) | 2019-05-31 |
SG10201403692RA (en) | 2015-02-27 |
US9490149B2 (en) | 2016-11-08 |
CN113186519B (zh) | 2023-06-20 |
KR102358027B1 (ko) | 2022-02-08 |
TW201512451A (zh) | 2015-04-01 |
CN110158061A (zh) | 2019-08-23 |
KR20220018530A (ko) | 2022-02-15 |
KR20150004771A (ko) | 2015-01-13 |
US20170009348A1 (en) | 2017-01-12 |
TW201907051A (zh) | 2019-02-16 |
JP2015015469A (ja) | 2015-01-22 |
SG10201802646PA (en) | 2018-05-30 |
KR102224889B1 (ko) | 2021-03-08 |
JP2018152577A (ja) | 2018-09-27 |
TWI676708B (zh) | 2019-11-11 |
CN113186519A (zh) | 2021-07-30 |
CN104278253A (zh) | 2015-01-14 |
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