TWI741336B - Composite sheet for forming protective film - Google Patents

Composite sheet for forming protective film Download PDF

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TWI741336B
TWI741336B TW108127491A TW108127491A TWI741336B TW I741336 B TWI741336 B TW I741336B TW 108127491 A TW108127491 A TW 108127491A TW 108127491 A TW108127491 A TW 108127491A TW I741336 B TWI741336 B TW I741336B
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protective film
sheet
forming
film
composite sheet
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TW108127491A
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Chinese (zh)
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TW201940624A (en
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佐伯尚哉
山本大輔
米山裕之
稻男洋一
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日商琳得科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A composite sheet for forming a protective film of the invention is a composite sheet for forming a protective film 3 including a supporting sheet 4 and a protection layer forming film 1 which is laminated on a first surface of the supporting sheet 4, wherein the arithmetic average roughness (Ra1) of a second surface of the supporting film 4 is 0.2µm or more and the arithmetic average roughness (Ra2) of the second surface of the supporting film 4 after heating the supporting film 4 at 130C° for two hours is 0.25µm or less.

Description

保護膜形成用複合片Composite sheet for forming protective film

本發明為一種保護膜形成用複合片,係可於半導體晶圓等工件上、或加工前述工件所得之加工物(例如半導體晶片)上形成保護膜。 The present invention is a composite sheet for forming a protective film, which can form a protective film on a workpiece such as a semiconductor wafer, or a processed product (for example, a semiconductor wafer) obtained by processing the aforementioned workpiece.

本案基於2014年5月23日於日本申請之特願2014-106757號而主張優先權,並於此援用其內容。 This case claims priority based on Japanese Patent Application No. 2014-106757 filed on May 23, 2014, and its content is used here.

近年來,係藉由稱為倒裝(face-down)方式的安裝法而製造半導體裝置。此方法中,在安裝具有形成有凸塊等電極之電路面的半導體晶片時,會將半導體晶片的電路面側接合於導線架等晶片搭載部。因此會形成半導體晶片中未形成電路的內面側暴露在外之構造。 In recent years, semiconductor devices have been manufactured by a mounting method called a face-down method. In this method, when mounting a semiconductor wafer having a circuit surface on which electrodes such as bumps are formed, the circuit surface side of the semiconductor wafer is bonded to a chip mounting portion such as a lead frame. Therefore, a structure in which the inner surface side of the semiconductor wafer where no circuit is formed is exposed to the outside.

因此,為了保護半導體晶片,多於半導體晶片的內面側形成含有熱硬化性有機材料之保護膜。通常為了表示前述半導體晶片之品號等而會於此保護膜上印字。此時的印字方法現在一般使用對保護膜照射雷射光之雷射標記法(雷射印字)。 Therefore, in order to protect the semiconductor wafer, a protective film containing a thermosetting organic material is formed more than the inner surface side of the semiconductor wafer. Usually, in order to indicate the product number of the aforementioned semiconductor chip, etc., characters are printed on this protective film. The printing method at this time generally uses the laser marking method (laser printing) in which the protective film is irradiated with laser light.

由專利文件1至專利文件3分別揭示於黏著片上形成可形成前述保護膜之保護膜形成層(保護膜形成膜)的保護膜形成/切割一體型片(保護膜形成用複合片)。該等保護膜形成/切割一體型片中,保護膜形成膜係藉由加熱處理而硬化並形成前述保護膜。亦即,藉由前述保護膜形成/切割一體型片可進行半導體晶圓之切割、以及形成對於半導體晶片之保護膜,而得到附保護膜之半導體晶片。 Patent Document 1 to Patent Document 3 respectively disclose a protective film forming/cutting integrated sheet (composite sheet for protective film formation) in which a protective film forming layer (protective film forming film) capable of forming the aforementioned protective film is formed on an adhesive sheet. In these protective film forming/cutting integrated sheets, the protective film forming film is cured by heat treatment to form the aforementioned protective film. That is, with the aforementioned protective film forming/dicing integrated sheet, semiconductor wafers can be diced and a protective film can be formed for the semiconductor chip, thereby obtaining a semiconductor chip with a protective film.

此外,由半導體晶圓等工件製造包含半導體晶片等片狀物之加工物時,以往一般係一邊對工件噴灑以洗淨等為目的之液體,一邊進行用旋轉刃裁切工件而得片狀物之刀具切割加工。但是近年開始採用可用乾式分割為片狀物之隱形雷射晶圓切割(STEALTH DICING(註冊商標);以下亦同)加工(專利文件3)。 In addition, when manufacturing processed objects including semiconductor wafers and other sheet-like objects from workpieces such as semiconductor wafers, conventionally, while spraying liquid for cleaning, etc. on the workpiece, the workpiece is cut with a rotating blade to obtain the sheet-like objects. The cutter cutting process. However, in recent years, invisible laser wafer dicing (STEALTH DICING (registered trademark); the same applies below) processing that can be dry-divided into slices has been adopted (Patent Document 3).

例如專利文件4揭示一種隱形雷射晶圓切割法,係將積層黏著片(將由基材與黏著劑層所構成之黏著片積層2層者)貼於極薄的半導體晶圓,由積層黏著片側穿透前述積層黏著片對半導體晶圓照射雷射光,於半導體晶圓內部形成改質部後擴展黏著片,藉此沿著切割線分割半導體晶圓,而生產半導體晶片。 For example, Patent Document 4 discloses an invisible laser wafer dicing method, in which a laminated adhesive sheet (the adhesive sheet composed of a base material and an adhesive layer is laminated with two layers) is attached to an extremely thin semiconductor wafer, and the laminated adhesive sheet side The semiconductor wafer is irradiated with laser light through the aforementioned laminated adhesive sheet, and the modified portion is formed inside the semiconductor wafer to expand the adhesive sheet, thereby dividing the semiconductor wafer along the cutting line to produce the semiconductor wafer.

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

專利文件1:日本特開2006-140348號公報。 Patent Document 1: Japanese Patent Laid-Open No. 2006-140348.

專利文件2:日本特開2012-33637號公報。 Patent Document 2: Japanese Patent Application Publication No. 2012-33637.

專利文件3:日本特開2011-151362號公報。 Patent Document 3: Japanese Patent Application Publication No. 2011-151362.

專利文件4:日本專利第3762409號公報。 Patent Document 4: Japanese Patent No. 3762409.

專利文件5:日本特開2007-123404號公報。 Patent Document 5: Japanese Patent Laid-Open No. 2007-123404.

如前述般對工件進行雷射光照射時,由於雷射光需穿透黏著片到達保護膜或工件,因此黏著片需具有雷射光穿透性。 When the workpiece is irradiated with laser light as described above, since the laser light needs to penetrate the adhesive sheet to reach the protective film or the workpiece, the adhesive sheet must have laser light penetration.

此外,為了保護前述保護膜形成膜,因此大多在保護膜形成用複合片中之保護膜形成膜之黏著片相反側積層剝離片。將前述保護膜形成用複合片由輥狀態拉出時,捲繞之黏著片之保護膜形成膜之相反側的 面、以及剝離片之保護膜形成膜之相反側的面兩面會密接產生黏合(blocking)並產生由輥拉出之不良,或是黏著片會轉黏至捲繞之剝離片而無法貼於工件。 In addition, in order to protect the aforementioned protective film formation film, a release sheet is often laminated on the opposite side of the adhesive sheet of the protective film formation film in the composite sheet for protective film formation. When the aforementioned composite sheet for protective film formation is pulled out from the roll state, the wound adhesive sheet is on the opposite side of the protective film formation film The protective film of the release sheet and the two sides of the opposite side of the film formed by the release sheet will be closely adhered to produce blocking and cause defects to be pulled out by the roller, or the adhesive sheet will be transferred to the wound release sheet and cannot be attached to the workpiece. .

本發明係鑑於前述情形而研究者,目的為提供一種保護膜形成用複合片,係可抑制由捲繞為輥狀之狀態拉出保護膜形成用複合片時的黏合,且於照射雷射光時雷射光穿透性優異。 The present invention was researched in view of the foregoing circumstances, and the purpose of the present invention is to provide a composite sheet for forming a protective film, which can suppress adhesion when the composite sheet for forming a protective film is pulled out from the state of being wound into a roll, and when irradiating laser light The laser light has excellent penetrability.

為達成前述目的,本發明第一實施形態係提供一保護膜形成用複合片(發明1),其具有支持片、以及積層於前述支持片的第1面側的保護膜形成膜,前述支持片的第2面之算術平均粗度(Ra1)為0.2μm以上,將前述支持片以130℃加熱2小時後,前述支持片的第2面之算術平均粗度(Ra2)為0.25μm以下,較佳為前述基材在130℃的儲藏彈性率為1MPa至100MPa,較佳為前述支持片的第2面之前述加熱後的算術平均粗度(Ra2)小於前述算術平均粗度(Ra1)。又,於本說明書中,「片」係包括例如長條帶等之概念。 In order to achieve the foregoing object, the first embodiment of the present invention provides a composite sheet for forming a protective film (Invention 1), which has a support sheet and a protective film forming film laminated on the first surface side of the support sheet. The arithmetic mean roughness (Ra1) of the second surface of the support sheet is 0.2μm or more. After heating the support sheet at 130°C for 2 hours, the arithmetic mean roughness (Ra2) of the second surface of the support sheet is 0.25μm or less. Preferably, the storage elastic modulus of the substrate at 130° C. is 1 MPa to 100 MPa, and it is preferable that the arithmetic average roughness (Ra2) of the second surface of the support sheet after heating is smaller than the arithmetic average roughness (Ra1). In addition, in this specification, "sheet" includes concepts such as long strips.

依據前述發明(發明1),將保護膜形成用複合片捲繞為輥狀時,支持片的第2面、與接觸前述支持片的第2面的構件(例如在保護膜形成膜上設置有剝離片時則為剝離片,無設置剝離片時則為保護膜形成膜等)不易密接,從捲繞之輥狀拉出保護膜形成用複合片時不易發產生黏合。又,由支持片的第2面側照射雷射光時,雷射光不會因支持片的第2面的凹凸而散亂並穿透支持片,可有效率地到達保護膜形成膜硬化形成之保護膜或工件(半導體晶圓),係具有優異雷射光穿透性。 According to the aforementioned invention (Invention 1), when the composite sheet for forming a protective film is wound into a roll shape, the second surface of the support sheet and the member contacting the second surface of the support sheet (for example, the protective film forming film is provided with If the peeling sheet is a peeling sheet, if the peeling sheet is not provided, it is a protective film forming film, etc.) It is not easy to adhere, and when the protective film forming composite sheet is pulled out from the wound roll shape, it is not easy to cause adhesion. In addition, when the laser light is irradiated from the second surface side of the support sheet, the laser light will not be scattered by the unevenness of the second surface of the support sheet and penetrate the support sheet, and can efficiently reach the protection formed by the hardening of the protective film. Films or workpieces (semiconductor wafers) have excellent laser light penetration.

前述發明(發明1)中,較佳為前述支持片係包括基材及為前述基材的一邊的面側並積層於前述支持片的第1面側的黏著劑層;或是前述支持片係包括基材(發明2)。 In the aforementioned invention (Invention 1), it is preferable that the support sheet includes a substrate and an adhesive layer laminated on the first surface side of the substrate on the side of one side of the substrate; or the support sheet Including substrate (Invention 2).

前述發明(發明2)中,較佳為前述基材在130℃的儲藏彈性率為1MPa至100MPa(發明3)。 In the aforementioned invention (Invention 2), it is preferable that the storage elastic modulus of the aforementioned substrate at 130°C is 1 MPa to 100 MPa (Invention 3).

前述發明(發明2至發明3)中,較佳為前述基材在前述加熱後之波長1064nm的光線穿透率為40%以上(發明4)。 In the aforementioned inventions (Invention 2 to Invention 3), it is preferable that the substrate has a light transmittance of 40% or more at a wavelength of 1064 nm after the heating (Invention 4).

前述發明(發明2至發明4)中,較佳為前述基材在前述加熱後之波長532nm的光線穿透率為40%以上(發明5)。 In the aforementioned inventions (Inventions 2 to 4), it is preferable that the substrate has a light transmittance of 532 nm after heating of 40% or more (Invention 5).

前述發明(發明2至發明5)中,較佳為前述基材係乙烯與丙烯之共聚物所構成的膜(發明6)。 In the aforementioned inventions (Inventions 2 to 5), it is preferable that the aforementioned substrate is a film composed of a copolymer of ethylene and propylene (Invention 6).

前述發明(發明1至發明6)中,較佳為前述保護膜形成用複合片具有治具用黏著劑層,前述治具用黏著劑層係積層於前述保護膜形成膜中與前述支持片側相反側的邊緣部(發明7)。 In the aforementioned inventions (Inventions 1 to 6), it is preferable that the composite sheet for forming a protective film has an adhesive layer for a jig, and the adhesive layer for a jig is laminated on the protective film forming film opposite to the side of the support sheet. Side edge part (Invention 7).

前述發明(發明1至發明7)中,較佳為具有剝離片,前述剝離片係積層於前述保護膜形成膜(發明8)。 In the aforementioned inventions (Invention 1 to Invention 7), it is preferable to have a release sheet, and the release sheet is laminated on the protective film forming film (Invention 8).

前述發明(發明1至發明8)中,較佳為前述保護膜形成膜係在半導體晶圓、或切割半導體晶圓所得的半導體晶片形成保護膜的層(發明9)。 In the aforementioned inventions (Inventions 1 to 8), it is preferable that the aforementioned protective film forming film is a layer in which a protective film is formed on a semiconductor wafer or a semiconductor wafer obtained by dicing a semiconductor wafer (Invention 9).

本發明之保護膜形成用複合片可抑制從捲繞之輥狀之狀態拉出前述保護膜形成用複合片時所產生的黏合,且於照射雷射光時具有優異雷射光穿透性。 The composite sheet for forming a protective film of the present invention can suppress adhesion that occurs when the composite sheet for forming a protective film is pulled out from a rolled state, and has excellent laser light penetration when irradiated with laser light.

1:保護膜形成膜 1: Protective film forming film

101:圓形 101: round

3、3A:保護膜形成用複合片 3. 3A: Composite sheet for forming protective film

4:支持片 4: Support film

41:基材 41: Substrate

42:黏著劑層 42: Adhesive layer

401:圓形 401: round

402:圓弧 402: Arc

403:直線 403: straight line

5:治具用黏著劑層 5: Adhesive layer for jigs

6:剝離片 6: Peel off sheet

7:半導體晶圓 7: Semiconductor wafer

8:環狀架 8: Ring frame

圖1係本發明一實施形態之保護膜形成用複合片之剖面圖。 Fig. 1 is a cross-sectional view of a composite sheet for forming a protective film according to an embodiment of the present invention.

圖2係本發明一實施形態之保護膜形成用複合片之使用例,具體而言係表示積層構造體之剖面圖。 Fig. 2 is a use example of a composite sheet for forming a protective film according to an embodiment of the present invention, and specifically is a cross-sectional view showing a laminated structure.

圖3係本發明其他實施形態之保護膜形成用複合片的剖面圖。 Fig. 3 is a cross-sectional view of a composite sheet for forming a protective film according to another embodiment of the present invention.

圖4係實施例所製作之保護膜形成用複合片之平面圖。 Fig. 4 is a plan view of a composite sheet for forming a protective film produced in the embodiment.

以下說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described.

圖1為本發明一實施形態之保護膜形成用複合片之剖面圖。如圖1所示,本實施形態之保護膜形成用複合片3的構成係具有:支持片4;保護膜形成膜1,係積層於支持片4的一邊的面(後述之「第1面」;圖1中的上面)側;以及治具用黏著劑層5,係積層於保護膜形成膜1中支持片4的相反側的邊緣部。治具用黏著劑層5係用以將保護膜形成用複合片3接著至環形架等治具的層。又,本實施形態之保護膜形成用複合片3係於保護膜形成膜1及治具用黏著劑層5上(支持片4的相反側)具有剝離片6。此剝離片6係在使用保護膜形成用複合片3時剝離除去,其並非保護膜形成用複合片3中的必須構成要件。 Fig. 1 is a cross-sectional view of a composite sheet for forming a protective film according to an embodiment of the present invention. As shown in FIG. 1, the composite sheet 3 for forming a protective film of the present embodiment is composed of: a support sheet 4; 1) side; and the jig adhesive layer 5, which is laminated on the edge portion of the protective film forming film 1 on the opposite side of the support sheet 4. The adhesive layer 5 for jigs is a layer for adhering the composite sheet 3 for forming a protective film to jigs such as a ring frame. In addition, the composite sheet 3 for forming a protective film of the present embodiment has a release sheet 6 on the protective film forming film 1 and the adhesive layer 5 for jigs (on the opposite side of the support sheet 4). This peeling sheet 6 is peeled and removed when the composite sheet 3 for forming a protective film is used, and it is not an essential component of the composite sheet 3 for forming a protective film.

本實施形態之保護膜形成用複合片3係用以在加工工件時貼於前述工件而維持前述工件,並於前述工件或加工前述工件所得的加工物上形成保護膜。前述保護膜係由保護膜形成膜1所構成,較佳為由硬化之保護膜形成膜1所構成。 The composite sheet 3 for forming a protective film of the present embodiment is used to adhere to the work while processing the work to maintain the work, and to form a protective film on the work or a processed product obtained by processing the work. The aforementioned protective film is composed of a protective film forming film 1, preferably a cured protective film forming film 1.

舉一例而言,本實施形態之保護膜形成用複合片3係用以在將作為工件之半導體晶圓切割加工時保持半導體晶圓,並於切割所得之 半導體晶片上形成保護膜,但並不限定於此。此時之保護膜形成用複合片3的支持片4通常稱為切割片。 For example, the composite sheet 3 for forming a protective film of this embodiment is used to hold the semiconductor wafer when the semiconductor wafer as a workpiece is cut, and to cut the resulting semiconductor wafer The protective film is formed on the semiconductor wafer, but it is not limited to this. The support sheet 4 of the composite sheet 3 for forming a protective film at this time is generally called a dicing sheet.

本實施形態之保護膜形成用複合片3通常捲繞為長輥狀,並以輥對輥(roll-to-roll)的方式使用。 The composite sheet 3 for forming a protective film of this embodiment is usually wound in a long roll shape, and is used in a roll-to-roll system.

1.支持片 1. Support film

本實施形態之保護膜形成用複合片3的支持片4之構成係具有:基材41;以及黏著劑層42,係積層於基材41一邊的面側(保護膜形成膜1側;圖1中的上側)。本說明書中以支持片4中保護膜形成膜1側的面為「第1面」,其相反側的面(圖1中的下面)為「第2面」。支持片4中,黏著劑層42係積層於支持片4的第1面側,基材41係積層於支持片4的第2面側。 The structure of the support sheet 4 of the composite sheet 3 for forming a protective film of this embodiment includes a base material 41; In the upper side). In this specification, the surface on the side of the protective film forming film 1 in the support sheet 4 is referred to as the "first surface", and the surface on the opposite side (the lower surface in FIG. 1) is referred to as the "second surface". In the support sheet 4, the adhesive layer 42 is laminated on the first surface side of the support sheet 4, and the base material 41 is laminated on the second surface side of the support sheet 4.

1-1.基材 1-1. Substrate

基材41的黏著劑層42相反側的面(以下稱為「基材41的背面」。前述基材41的背面係支持片4的第2面。)之算術平均粗度(Ra1)為0.2μm以上。將基材41以130℃加熱2小時再冷卻至室溫後(以下稱為「加熱後」。),基材41的背面之算術平均粗度(Ra2)為0.25μm以下。又,基材41的背面之算術平均粗度(Ra1)係以130℃加熱2小時前的基材41的背面之算術平均粗度,以下稱為「加熱前的算術平均粗度(Ra1)」。此加熱前的算術平均粗度(Ra1)及加熱後的算術平均粗度(Ra2)係依據JIS B0601:2001測定,詳細測定方法如後述試驗例所示。 The surface of the base material 41 on the opposite side of the adhesive layer 42 (hereinafter referred to as "the back surface of the base material 41." The back surface of the base material 41 is the second surface of the support sheet 4.) has an arithmetic average roughness (Ra1) of 0.2 Above μm. After the base material 41 is heated at 130°C for 2 hours and then cooled to room temperature (hereinafter referred to as "after heating"), the arithmetic average roughness (Ra2) of the back surface of the base material 41 is 0.25 μm or less. In addition, the arithmetic average roughness (Ra1) of the back surface of the substrate 41 is the arithmetic average roughness of the back surface of the substrate 41 before heating at 130°C for 2 hours, and is hereinafter referred to as "arithmetic average roughness before heating (Ra1)" . The arithmetic average roughness (Ra1) before heating and the arithmetic average roughness (Ra2) after heating are measured in accordance with JIS B0601:2001, and the detailed measurement method is shown in the test example described later.

又,前述加熱處理(130℃、2小時)之條件通常是用以將保護膜形成膜1熱硬化的加熱處理條件,以將捲繞之輥狀保護膜形成用複合片3拉出時為加熱前,以進行雷射印字、或隱形雷射晶圓切割之雷射光照射時為加熱後。但前述加熱處理不一定為用以將保護膜形成膜1熱硬化的處理,例如保護膜形成膜1為能量線硬化性時可以進行另外的加熱處理。 In addition, the conditions of the aforementioned heat treatment (130°C, 2 hours) are usually the heat treatment conditions for thermally curing the protective film forming film 1, which is heating when the rolled composite sheet 3 for protective film formation is drawn out. Before, it is heated after being irradiated with laser light for laser printing or invisible laser wafer cutting. However, the aforementioned heating treatment is not necessarily a treatment for thermally curing the protective film forming film 1. For example, when the protective film forming film 1 is energy ray curable, another heating treatment may be performed.

藉由使基材41的背面的加熱前的算術平均粗度(Ra1)為0.2μm以上,在捲繞狀態時,基材41的背面與剝離片6中保護膜形成膜1之相反側的面兩者不易密接。藉此,在拉出捲繞之輥狀保護膜形成用複合片3時不易產生黏合。因此可抑制黏合所造成的拉出不良,或可抑制支持片4轉黏至捲繞的剝離片6上而無法貼於工件之情形。 By setting the arithmetic mean roughness (Ra1) of the back surface of the base material 41 before heating to 0.2 μm or more, in the wound state, the back surface of the base material 41 and the surface of the release sheet 6 on the opposite side of the protective film forming film 1 The two are not easy to connect closely. Thereby, when the composite sheet 3 for forming a roll-shaped protective film which is wound is pulled out, it is difficult to produce adhesion|attachment. Therefore, poor pull-out caused by adhesion can be suppressed, or the support sheet 4 can be prevented from sticking to the wound release sheet 6 and unable to stick to the workpiece.

由前述觀點來看,基材41背面的加熱前的算術平均粗度(Ra1)較佳為0.25μm以上,更佳為0.30μm以上。 From the foregoing viewpoint, the arithmetic average roughness (Ra1) of the back surface of the base material 41 before heating is preferably 0.25 μm or more, and more preferably 0.30 μm or more.

於此,基材41背面的加熱前的算術平均粗度(Ra1)的上限較佳為1.0μm以下,更佳為0.8μm以下,又更佳為0.7μm以下。加熱前的算術平均粗度(Ra1)若超過1.0μm則有難以達成前述的加熱後的算術平均粗度(Ra2)之虞。 Here, the upper limit of the arithmetic average roughness (Ra1) of the back surface of the base material 41 before heating is preferably 1.0 μm or less, more preferably 0.8 μm or less, and still more preferably 0.7 μm or less. If the arithmetic average roughness (Ra1) before heating exceeds 1.0 μm, it may be difficult to achieve the aforementioned arithmetic average roughness (Ra2) after heating.

亦即,基材41背面的加熱前的算術平均粗度(Ra1)較佳為0.25μm至1.0μm,更佳為0.30μm至0.7μm。 That is, the arithmetic average roughness (Ra1) of the back surface of the base material 41 before heating is preferably 0.25 μm to 1.0 μm, more preferably 0.30 μm to 0.7 μm.

此外,藉由使基材41背面依前述條件所得之加熱後的算術平均粗度(Ra2)為0.25μm以下,而在由基材41的背面側照射雷射光時,雷射光不會因基材41背面之凹凸而散亂並穿透支持片4,可有效率地到達保護膜形成膜1硬化所形成之保護膜或工件(半導體晶圓),具有優異雷射光穿透性。因此,除了雷射印字性優異並可形成辨識性高的印字外,隱形雷射晶圓切割之工件分割性亦優異。 In addition, by making the arithmetic mean roughness (Ra2) of the back surface of the substrate 41 after heating obtained under the aforementioned conditions to be 0.25 μm or less, when the laser light is irradiated from the back side of the substrate 41, the laser light will not be affected by the substrate 41. The irregularities on the back of 41 are scattered and penetrate the support sheet 4, which can efficiently reach the protective film or workpiece (semiconductor wafer) formed by the hardening of the protective film forming film 1, and has excellent laser light penetration. Therefore, in addition to the excellent laser printability and the formation of highly recognizable prints, the invisible laser wafer dicing also has excellent work piece separation.

由前述觀點來看,基材41背面的加熱後的算術平均粗度(Ra2)較佳為0.20μm以下,更佳為0.10μm以下。 From the foregoing viewpoints, the arithmetic average roughness (Ra2) of the back surface of the substrate 41 after heating is preferably 0.20 μm or less, and more preferably 0.10 μm or less.

於此,基材41背面的加熱後的算術平均粗度(Ra2)之下限只要滿足加熱前的算術平均粗度(Ra1)則無特別限制。但通常為0.001μm以上,較佳為0.01μm以上。 Here, the lower limit of the arithmetic average roughness (Ra2) after heating on the back surface of the base material 41 is not particularly limited as long as it satisfies the arithmetic average roughness (Ra1) before heating. However, it is usually 0.001 μm or more, preferably 0.01 μm or more.

亦即,基材41背面的加熱後的算術平均粗度(Ra2)較佳為0.001μm至0.20μm,更佳為0.01μm至0.10μm。 That is, the arithmetic average roughness (Ra2) of the back surface of the substrate 41 after heating is preferably 0.001 μm to 0.20 μm, more preferably 0.01 μm to 0.10 μm.

又,基材41中,基材41背面依前述條件所得的加熱後的算術平均粗度(Ra2)較佳為小於加熱前的算術平均粗度(Ra1)。藉由如此設定可使加熱前之黏合抑制效果及加熱後之雷射光穿透性兩者皆優異。 In addition, in the base material 41, the arithmetic average roughness (Ra2) after heating of the back surface of the base material 41 under the aforementioned conditions is preferably smaller than the arithmetic average roughness (Ra1) before heating. By setting in this way, both the adhesion suppression effect before heating and the laser light penetration after heating are excellent.

調整基材41背面的加熱前的算術平均粗度(Ra1)之方法並無特別限定,但一般可藉由改變構成基材41之樹脂膜在製膜時所使用的輥的表面粗度、噴砂加工、或是加熱熔融並摻配平坦化的充填劑等而調整。 The method of adjusting the arithmetic average roughness (Ra1) of the back surface of the base material 41 before heating is not particularly limited, but it can generally be achieved by changing the surface roughness of the roller used in the film formation of the resin film constituting the base material 41 and sandblasting. It is adjusted by processing, or by heating and melting and blending a flattening filler.

此外,調整基材41背面的加熱後的算術平均粗度(Ra2)之方法,較佳為基材41係以熔點在特定範圍內之樹脂膜(以樹脂系材料為主材的膜)所構成,更佳為以熔點在特定範圍內且130℃之儲藏彈性率在特定範圍內之樹脂膜所構成。 In addition, as a method of adjusting the arithmetic mean roughness (Ra2) of the heated back surface of the base material 41, it is preferable that the base material 41 is composed of a resin film (a film made of a resin-based material as the main material) whose melting point is within a specific range. It is more preferable to be composed of a resin film with a melting point in a specific range and a storage elastic modulus of 130°C in a specific range.

基材41的熔點較佳為90℃至180℃,更佳為100℃至160℃,又更佳為110℃至150℃。藉由使基材41的熔點在前述範圍內,而容易將基材41背面的加熱後的算術平均粗度(Ra2)調整至前述範圍。基材41的熔點若未滿90℃,則加熱硬化中基材41有完全熔融之虞。另一方面,基材41的熔點若超過180℃,則有經過130℃、2小時加熱而基材41背面之算術平均粗度仍無變化之虞。又,前述熔點係依據JIS K7121(ISO3146)測定,詳細測定方法如後述試驗例所示。 The melting point of the substrate 41 is preferably 90°C to 180°C, more preferably 100°C to 160°C, and still more preferably 110°C to 150°C. By setting the melting point of the base material 41 within the aforementioned range, it is easy to adjust the arithmetic mean roughness (Ra2) of the back surface of the base material 41 after heating to the aforementioned range. If the melting point of the base material 41 is less than 90°C, the base material 41 may be completely melted during heat curing. On the other hand, if the melting point of the base material 41 exceeds 180°C, the arithmetic average roughness of the back surface of the base material 41 may not change even after heating at 130°C for 2 hours. In addition, the aforementioned melting point is measured in accordance with JIS K7121 (ISO3146), and the detailed measurement method is as shown in the test example described later.

調整基材41的熔點的方法並無特別限制,但一般藉由主要使用之樹脂材料的熔點而調整。又,藉由混合熔點不同的複數樹脂材料或將複數單體共聚而可將基材41調整至任意熔點。 The method of adjusting the melting point of the base material 41 is not particularly limited, but it is generally adjusted by the melting point of the resin material mainly used. In addition, the base material 41 can be adjusted to an arbitrary melting point by mixing plural resin materials having different melting points or copolymerizing plural monomers.

基材41的130℃之儲藏彈性率較佳為1MPa至100MPa,更佳為2MPa至80MPa,又更佳為5MPa至50MPa。藉由使基材41的130 ℃之儲藏彈性率為前述範圍,而容易將基材41背面的加熱後的算術平均粗度(Ra2)調整至前述範圍。基材41的130℃之儲藏彈性率若未滿1MPa時,則加熱處理中基材41會產生大的變形,而有無法維持工件之虞。此外,若基材41的130℃之儲藏彈性率超過100MPa時,則有經過130℃、2小時的加熱而基材41背面之算術平均粗度仍無變化之虞。又,前述儲藏彈性率的測定方法如後述試驗例所示。 The storage elastic modulus of the base material 41 at 130° C. is preferably 1 MPa to 100 MPa, more preferably 2 MPa to 80 MPa, and still more preferably 5 MPa to 50 MPa. By making the base material 41 of 130 The storage elastic modulus at °C is within the aforementioned range, and the arithmetic mean roughness (Ra2) of the back surface of the base material 41 after heating is easily adjusted to the aforementioned range. If the storage elastic modulus of the base material 41 at 130° C. is less than 1 MPa, the base material 41 will be greatly deformed during the heat treatment, and the workpiece may not be able to be maintained. In addition, if the storage elastic modulus of the base material 41 at 130° C. exceeds 100 MPa, there is a possibility that the arithmetic average roughness of the back surface of the base material 41 remains unchanged after heating at 130° C. for 2 hours. In addition, the method for measuring the aforementioned storage elastic modulus is as shown in the test example described later.

調整基材41的130℃之儲藏彈性率的方法並無特別限定,但一般係藉由主要使用的樹脂材料的儲藏彈性率而調整。又,一般來說即使化學構造相同,有分子量高則儲藏彈性率亦變高之傾向,藉由交聯或分子量分布狹窄(分子量分布集中)而儲藏彈性率有變高之傾向。根據該等傾向而可將基材41調整至任意儲藏彈性率。 The method of adjusting the 130°C storage elastic modulus of the base material 41 is not particularly limited, but it is generally adjusted by the storage elastic modulus of the resin material mainly used. In addition, in general, even if the chemical structure is the same, the storage elastic modulus tends to increase when the molecular weight is high, and the storage elastic modulus tends to increase due to cross-linking or narrow molecular weight distribution (concentrated molecular weight distribution). According to these tendencies, the base material 41 can be adjusted to an arbitrary storage elastic modulus.

於隱形雷射晶圓切割等中使用波長1064nm的雷射光時,基材41加熱後之波長1064nm的光線穿透率較佳為40%以上,更佳為50%以上,又更佳為60%以上。藉由使基材41加熱後之波長1064nm的光線穿透率在前述範圍,而隱形雷射晶圓切割的工件分割性優異。本實施形態中,藉由使基材41背面的加熱後的算術平均粗度(Ra2)在前述範圍而可實現前述光線穿透率。又,基材41加熱後之波長1064nm的光線穿透率越高越好,但可實現的光線穿透率最大約為99%左右。 When using laser light with a wavelength of 1064nm in invisible laser wafer cutting, etc., the light transmittance of the substrate 41 at a wavelength of 1064nm after heating is preferably 40% or more, more preferably 50% or more, and even more preferably 60% above. By making the light transmittance of the 1064nm wavelength of the substrate 41 within the aforementioned range after the substrate 41 is heated, the invisible laser wafer dicing has excellent work piece separation. In this embodiment, the aforementioned light transmittance can be achieved by setting the arithmetic average thickness (Ra2) of the back surface of the base material 41 after heating within the aforementioned range. Furthermore, the higher the light transmittance of the 1064nm wavelength after the substrate 41 is heated, the better, but the achievable light transmittance is about 99% at the maximum.

又,對保護膜使用雷射標記等之波長532nm的雷射光時,基材41加熱後之波長532nm的光線穿透率較佳為40%以上,更佳為50%以上,又更佳為60%以上。藉由使基材41加熱後之波長532nm的光線穿透率在前述範圍,而雷射印字性優異。本實施形態中,藉由基材41背面的加熱後的算術平均粗度(Ra2)在前述範圍,而可實現前述光線穿透率。又, 基材41加熱後之波長532nm的光線穿透率與前述同樣越高越好,但可實現的光線穿透率最大約為99%左右。 In addition, when using laser light with a wavelength of 532nm such as a laser mark for the protective film, the light transmittance at a wavelength of 532nm after the substrate 41 is heated is preferably 40% or more, more preferably 50% or more, and still more preferably 60 %above. By making the light transmittance of the 532 nm wavelength of the substrate 41 within the aforementioned range after heating, the laser printability is excellent. In this embodiment, since the arithmetic average thickness (Ra2) of the back surface of the base material 41 after heating is in the aforementioned range, the aforementioned light transmittance can be achieved. again, After the substrate 41 is heated, the light transmittance at a wavelength of 532 nm is the same as the above, the higher the better, but the maximum achievable light transmittance is about 99%.

構成基材41之樹脂膜的具體例可舉例如低密度聚乙烯(LDPE)膜、直鏈低密度聚乙烯(LLDPE)膜、高密度聚乙烯(HDPE)膜等聚乙烯膜;聚丙烯膜、乙烯/丙烯共聚物膜、聚丁烯膜、聚丁二烯膜、聚甲基戊烯膜、乙烯/降冰片烯共聚物膜、降冰片烯樹脂膜等聚烯烴系膜;乙烯/乙酸乙烯酯共聚物膜、乙烯/(甲基)丙烯酸共聚物膜、乙烯/(甲基)丙烯酸酯共聚物膜等乙烯系共聚膜;聚氯乙烯膜、氯乙烯共聚物膜等聚氯乙烯系膜;聚對苯二甲酸乙二酯膜、聚對苯二甲酸丁二酯膜等聚酯系膜;聚胺甲酸乙酯膜;聚醯亞胺膜;聚苯乙烯膜;聚碳酸酯膜;氟樹脂膜等。又,亦可使用該等之交聯膜、離子聚合物膜等改質膜。進一步可為前述膜進行複數積層之積層膜。又,本說明書之「(甲基)丙烯酸」是指丙烯酸及甲基丙烯酸兩者。其他類似用語亦同。 Specific examples of the resin film constituting the base material 41 include polyethylene films such as low-density polyethylene (LDPE) films, linear low-density polyethylene (LLDPE) films, and high-density polyethylene (HDPE) films; polypropylene films, Polyolefin films such as ethylene/propylene copolymer film, polybutene film, polybutadiene film, polymethylpentene film, ethylene/norbornene copolymer film, norbornene resin film; ethylene/vinyl acetate Copolymer films, ethylene/(meth)acrylic acid copolymer films, ethylene/(meth)acrylate copolymer films and other ethylene copolymer films; polyvinyl chloride films, vinyl chloride copolymer films and other polyvinyl chloride films; poly Polyester film such as ethylene terephthalate film and polybutylene terephthalate film; polyurethane film; polyimide film; polystyrene film; polycarbonate film; fluororesin film Wait. In addition, modified membranes such as crosslinked membranes and ionomer membranes can also be used. Furthermore, it may be a laminated film in which plural layers of the aforementioned film are laminated. In addition, "(meth)acrylic acid" in this specification means both acrylic acid and methacrylic acid. The same is true for other similar terms.

積層膜之情形,較佳為例如在基材41的背面側配置加熱前後之算術平均粗度會變化之膜,並於基材41的黏著劑層42側配置具耐熱性且高溫不會變形之膜。 In the case of a laminated film, it is preferable to arrange, for example, a film whose arithmetic average thickness changes before and after heating on the back side of the base material 41, and arrange on the adhesive layer 42 side of the base material 41 a heat-resistant and high-temperature non-deformable film. membrane.

前述之中較佳為聚烯烴系膜,更佳為聚乙烯膜、聚丙烯膜及乙烯/丙烯共聚物膜,又更佳為乙烯/丙烯共聚物膜。該等樹脂膜易滿足前述物性,特別是乙烯/丙烯共聚物膜可藉由調整乙烯單體與丙烯單體的共聚比而易滿足前述物性。又,以工件貼附性及晶片剝離性的觀點來看,該等樹脂膜亦較佳。 Among the foregoing, a polyolefin-based film is preferred, a polyethylene film, a polypropylene film, and an ethylene/propylene copolymer film are more preferred, and an ethylene/propylene copolymer film is still more preferred. These resin films easily satisfy the aforementioned physical properties, and in particular, ethylene/propylene copolymer films can easily satisfy the aforementioned physical properties by adjusting the copolymerization ratio of ethylene monomer and propylene monomer. In addition, these resin films are also preferable from the viewpoints of work adhesion and wafer peelability.

前述樹脂膜,以提升其與表面所積層之黏著劑層42的密接性為目的,可視需求而於單面或雙面實施藉由氧化法或凹凸化法等之表面處理、或是底塗處理。前述氧化法可舉例如電暈放電處理、電漿放電處理、 鉻氧化處理(濕式)、火炎處理、熱風處理、臭氧、紫外線照射處理等,又,凹凸化法可舉例如噴砂法、熔射處理法等。 The aforementioned resin film has the purpose of improving its adhesion to the adhesive layer 42 laminated on the surface, and can be subjected to surface treatment by oxidation or embossing method, or primer treatment on one or both sides according to needs. . The foregoing oxidation method may include, for example, corona discharge treatment, plasma discharge treatment, Chromium oxidation treatment (wet type), flame treatment, hot air treatment, ozone, ultraviolet irradiation treatment, etc., and the unevenness method includes, for example, a sandblasting method, a spray treatment method, and the like.

又,基材41係可於前述樹脂膜中含有著色劑、阻燃劑、塑化劑、抗靜電劑、滑劑、充填劑等各種添加劑。 In addition, the base material 41 may contain various additives such as a colorant, a flame retardant, a plasticizer, an antistatic agent, a lubricant, and a filler in the aforementioned resin film.

只要在使用保護膜形成用複合片3之各步驟中可具有適當功能,則基材41的厚度無特別限定,但較佳為20μm至450μm,更佳為25μm至400μm,又更佳為50μm至350μm。 The thickness of the base material 41 is not particularly limited as long as it has appropriate functions in each step using the protective film forming composite sheet 3, but it is preferably 20 μm to 450 μm, more preferably 25 μm to 400 μm, and more preferably 50 μm to 350μm.

1-2.黏著劑層 1-2. Adhesive layer

本實施形態之保護膜形成用複合片3之支持片4所具有的黏著劑層42,係可由非能量線硬化性黏著劑所構成,亦可由能量線硬化性黏著劑所構成。非能量線硬化性黏著劑較佳為具有所求的黏著力及再剝離性,例如可使用丙烯酸系黏著劑、橡膠系黏著劑、矽酮系黏著劑、胺甲酸乙酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等。該等之中較佳為與保護膜形成膜1的密接性高,且在切割步驟等可有效抑制工件或加工物的脫落之丙烯酸系黏著劑。 The adhesive layer 42 of the support sheet 4 of the composite sheet 3 for forming a protective film of this embodiment may be composed of a non-energy-ray curable adhesive or may be composed of an energy-ray curable adhesive. The non-energy-ray-curable adhesive preferably has the required adhesion and releasability. For example, acrylic adhesives, rubber-based adhesives, silicone-based adhesives, urethane-based adhesives, and polyesters can be used. Adhesives, polyvinyl ether adhesives, etc. Among them, an acrylic adhesive that has high adhesion to the protective film forming film 1 and can effectively suppress the peeling of the workpiece or the processed product in the cutting step or the like is preferable.

另一方面,能量線硬化性黏著劑會因能量線照射而降低黏著力,故要將工件或加工物與支持片4分離時係藉由照射能量線而可容易地分離。 On the other hand, the energy ray curable adhesive reduces the adhesive force due to energy ray irradiation. Therefore, when separating the workpiece or the processed object from the support sheet 4, it can be easily separated by irradiating energy ray.

由能量線硬化性黏著劑形成黏著劑層42時,較佳為使保護膜形成用複合片3中的黏著劑層42硬化。能量線硬化性黏著劑硬化所形成之材料通常彈性率高且表面平滑性高,因此,若將接觸於前述材料所構成之硬化部分的保護膜形成膜1硬化而形成保護膜,則保護膜中與前述硬化部分接觸的表面係平滑性(光澤)高且作為晶片保護膜的美觀性優異。又,若對表面平滑性高的保護膜實施雷射印字,則可提升其印字視識性。 When the adhesive layer 42 is formed from an energy-ray curable adhesive, it is preferable to harden the adhesive layer 42 in the composite sheet 3 for forming a protective film. The material formed by the hardening of the energy-ray curable adhesive usually has a high elastic modulus and a high surface smoothness. Therefore, if the protective film forming film 1 contacting the hardened part made of the aforementioned material is hardened to form a protective film, the protective film is The surface in contact with the hardened portion has high smoothness (gloss) and excellent aesthetics as a wafer protective film. In addition, if laser printing is performed on a protective film with high surface smoothness, the visibility of printing can be improved.

構成黏著劑層42之能量線硬化性黏著劑可為以能量線硬化性聚合物作為主成分者,亦可為以非能量線硬化性聚合物與能量線硬化性多官能單體及/或寡聚物的混合物作為主成分者。 The energy-ray-curable adhesive that constitutes the adhesive layer 42 may be one with energy-ray-curable polymer as the main component, or it may be composed of a non-energy-ray-curable polymer and an energy-ray-curable polyfunctional monomer and/or oligomer. A mixture of polymers as the main component.

以下說明能量線硬化性黏著劑以能量線硬化性聚合物作為主成分之情況。 The following describes the case where the energy ray curable adhesive has an energy ray curable polymer as the main component.

能量線硬化性聚合物較佳為於側鏈導入能量線硬化性官能基(能量線硬化性基)之(甲基)丙烯酸酯(共)聚物(A)(以下稱為「能量線硬化型聚合物(A)」)。前述能量線硬化型聚合物(A)較佳為將(甲基)丙烯酸系共聚物(a1)與含有不飽和基的化合物(a2)反應所得者,前述(甲基)丙烯酸系共聚物(a1)係具有含有官能基的單體單元,前述含有不飽和基的化合物(a2)係具有與前述官能基鍵結的取代基。 The energy-ray-curable polymer is preferably a (meth)acrylate (co)polymer (A) (hereinafter referred to as "energy-ray-curable type" Polymer (A)”). The energy ray-curable polymer (A) is preferably one obtained by reacting a (meth)acrylic copolymer (a1) with an unsaturated group-containing compound (a2), and the (meth)acrylic copolymer (a1) ) Has a functional group-containing monomer unit, and the aforementioned unsaturated group-containing compound (a2) has a substituent bonded to the aforementioned functional group.

丙烯酸系共聚物(a1)係由源自含有官能基的單體之構成單元、以及源自(甲基)丙烯酸酯單體或其衍生物之構成單元所構成。 The acrylic copolymer (a1) is composed of a structural unit derived from a monomer containing a functional group and a structural unit derived from a (meth)acrylate monomer or a derivative thereof.

作為丙烯酸系共聚物(a1)之構成單元的含有官能基的單體,較佳為分子內具有聚合性雙鍵、以及羥基、胺基、取代胺基、環氧基等官能基之單體。 The functional group-containing monomer as a structural unit of the acrylic copolymer (a1) is preferably a monomer having a polymerizable double bond and a functional group such as a hydroxyl group, an amino group, a substituted amino group, and an epoxy group in the molecule.

前述含有官能基的單體之具體例可舉例如(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸3-羥丙酯、(甲基)丙烯酸4-羥丁酯等,可將該等單獨使用或組合2種以上使用。 Specific examples of the aforementioned functional group-containing monomers include, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, (meth) 4-hydroxybutyl acrylate and the like can be used alone or in combination of two or more kinds.

構成丙烯酸系共聚物(a1)之(甲基)丙烯酸酯單體,係使用烷基碳數為1至20之(甲基)丙烯酸烷酯、(甲基)丙烯酸環烷酯、(甲基)丙烯酸苄酯。該等中較佳為烷基碳數為1至18之(甲基)丙烯酸烷酯,例如可使用(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸2-乙基己酯等。 The (meth)acrylate monomer constituting the acrylic copolymer (a1) uses alkyl (meth)acrylate, cycloalkyl (meth)acrylate, and (meth) Benzyl acrylate. Among them, alkyl (meth)acrylates having an alkyl group of 1 to 18 carbon atoms are preferred. For example, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, N-Butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc.

丙烯酸系共聚物(a1)中,相對於丙烯酸系共聚物(a1)的總質量,前述源自含有官能基的單體之構成單元的含有比例通常為3質量%至100質量%,較佳為4質量%至80質量%,更佳為5質量%至40質量%,相對於丙烯酸系共聚物(a1)的總質量,源自(甲基)丙烯酸酯單體或其衍生物之構成單元的含有比例通常為0質量%至97質量%,較佳為60質量%至95質量%。 In the acrylic copolymer (a1), relative to the total mass of the acrylic copolymer (a1), the content of the structural unit derived from the functional group-containing monomer is usually 3% by mass to 100% by mass, preferably 4% to 80% by mass, more preferably 5% to 40% by mass, relative to the total mass of the acrylic copolymer (a1), derived from the constituent units of the (meth)acrylate monomer or its derivative The content ratio is usually 0% by mass to 97% by mass, preferably 60% by mass to 95% by mass.

藉由常法將如前述之含有官能基的單體、與(甲基)丙烯酸酯單體或其衍生物共聚而獲得丙烯酸系共聚物(a1),但除該等單體外,也可將二甲基丙烯醯胺、甲酸乙烯酯、乙酸乙烯酯、苯乙烯等共聚。 Acrylic copolymer (a1) can be obtained by copolymerizing the aforementioned functional group-containing monomers with (meth)acrylate monomers or their derivatives by conventional methods, but in addition to these monomers, it is also possible to Copolymerization of dimethyl acrylamide, vinyl formate, vinyl acetate, styrene, etc.

將具有前述含有官能基的單體單元之丙烯酸系共聚物(a1)、以及具有與前述官能基鍵結的取代基之含有不飽和基的化合物(a2)進行反應,藉此可得能量線硬化型聚合物(A)。 The acrylic copolymer (a1) having the aforementioned functional group-containing monomer unit and the unsaturated group-containing compound (a2) having a substituent bonded to the aforementioned functional group are reacted to obtain energy ray hardening Type polymer (A).

具有含有不飽和基的化合物(a2)之取代基,係可因應丙烯酸系共聚物(a1)所具有之含有官能基的單體單元的官能基種類而適當選擇。例如官能基為羥基、胺基或取代胺基時,取代基較佳為異氰酸酯基或環氧基,官能基為環氧基時,取代基較佳為胺基、羧基或氮丙啶基。 The substituent having the unsaturated group-containing compound (a2) can be appropriately selected according to the type of the functional group of the functional group-containing monomer unit of the acrylic copolymer (a1). For example, when the functional group is a hydroxyl group, an amino group or a substituted amino group, the substituent is preferably an isocyanate group or an epoxy group, and when the functional group is an epoxy group, the substituent is preferably an amino group, a carboxyl group or an aziridinyl group.

又,含有不飽和基的化合物(a2)中所含有之能量線聚合性的碳-碳雙鍵在每1分子中較佳為1個至5個,更佳為1個至2個。如此之含有不飽和基的化合物(a2)之具體例可舉例如異氰酸2-甲基丙烯醯氧乙酯、異氰酸間異丙烯-α,α-二甲苄酯、異氰酸甲基丙烯醯酯、異氰酸丙烯酯、異氰酸1,1-(雙丙烯醯氧基甲基)乙酯;二異氰酸酯化合物或聚異氰酸酯化合物與(甲基)丙烯酸羥乙酯反應所得之單異氰酸丙烯醯酯化合物;二異氰酸酯化合物或聚異氰酸酯化合物與多元醇化合物與(甲基)丙烯酸羥乙酯反應所得之單異氰酸丙烯醯酯化合物;(甲基)丙烯酸環氧丙酯;(甲基)丙烯酸、(甲 基)丙烯酸2-(1-氮丙啶)乙酯、2-乙烯-2-噁唑啉(2-vinyl-2-oxazoline)、2-異丙烯基-2-噁唑啉等。 In addition, the energy-beam polymerizable carbon-carbon double bonds contained in the unsaturated group-containing compound (a2) are preferably 1 to 5, and more preferably 1 to 2 per molecule. Specific examples of such an unsaturated group-containing compound (a2) include, for example, 2-methacryloxyethyl isocyanate, isopropylene-α,α-dimethylbenzyl isocyanate, methyl isocyanate Acrylic acid ester, propylene isocyanate, 1,1-(bisacryloxymethyl) ethyl isocyanate; a monomer obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate Acrylic isocyanate compound; Acrylic monoisocyanate compound obtained by reacting diisocyanate compound or polyisocyanate compound and polyol compound with hydroxyethyl (meth)acrylate; glycidyl (meth)acrylate; (Meth)acrylic acid, (A 2-(1-aziridine) ethyl acrylate, 2-vinyl-2-oxazoline (2-vinyl-2-oxazoline), 2-isopropenyl-2-oxazoline, etc.

前述丙烯酸系共聚物(a1)的含有官能基的單體每100當量,含有不飽和基的化合物(a2)通常之使用比例為10當量至100當量,較佳為20當量至95當量。 Per 100 equivalents of the functional group-containing monomer of the aforementioned acrylic copolymer (a1), the unsaturated group-containing compound (a2) is usually used in a ratio of 10 to 100 equivalents, preferably 20 to 95 equivalents.

丙烯酸系共聚物(a1)與含有不飽和基的化合物(a2)反應時,可因應官能基與取代基之組合而適當選擇反應溫度、壓力、溶媒、時間、有無觸媒、觸媒種類。藉此使丙烯酸系共聚物(a1)中所存在的官能基與含有不飽和基的化合物(a2)中的取代基反應,並將不飽和基導入丙烯酸系共聚物(a1)中的側鏈,而得能量線硬化型聚合物(A)。 When the acrylic copolymer (a1) is reacted with the unsaturated group-containing compound (a2), the reaction temperature, pressure, solvent, time, presence or absence of catalyst, and type of catalyst can be appropriately selected in accordance with the combination of functional groups and substituents. Thereby, the functional group present in the acrylic copolymer (a1) is reacted with the substituent in the unsaturated group-containing compound (a2), and the unsaturated group is introduced into the side chain in the acrylic copolymer (a1), The energy ray hardening polymer (A) is obtained.

如此所得之能量線硬化型聚合物(A)的重量平均分子量較佳為1萬以上,更佳為15萬至150萬,又更佳為20萬至100萬。又,本說明書之重量平均分子量(Mw)係由凝膠滲透層析法(GPC法)測定之聚苯乙烯換算值。 The weight average molecular weight of the energy ray curable polymer (A) thus obtained is preferably 10,000 or more, more preferably 150,000 to 1.5 million, and still more preferably 200,000 to 1 million. In addition, the weight average molecular weight (Mw) in this specification is a polystyrene conversion value measured by gel permeation chromatography (GPC method).

能量線硬化性黏著劑以能量線硬化性聚合物為主成分時,能量線硬化性黏著劑可進一步含有能量線硬化性之單體及/或寡聚物(B)。 When the energy-ray-curable adhesive has an energy-ray-curable polymer as the main component, the energy-ray-curable adhesive may further contain energy-ray-curable monomers and/or oligomers (B).

能量線硬化性之單體及/或寡聚物(B)例如可使用多元醇與(甲基)丙烯酸之酯等。 As the energy-ray curable monomer and/or oligomer (B), for example, esters of polyol and (meth)acrylic acid can be used.

前述能量線硬化性之單體及/或寡聚物(B)可舉例如(甲基)丙烯酸環己酯、(甲基)丙烯酸異莰酯等單官能性丙烯酸酯類;三羥甲基丙烷三(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、二羥甲基三環癸烷 二(甲基)丙烯酸酯等多官能性丙烯酸酯類;聚酯寡聚(甲基)丙烯酸酯、聚胺甲酸乙酯寡聚(甲基)丙烯酸酯等。 Examples of the aforementioned energy-ray curable monomer and/or oligomer (B) include monofunctional acrylates such as cyclohexyl (meth)acrylate and isobornyl (meth)acrylate; trimethylolpropane Tri(meth)acrylate, neopentaerythritol tri(meth)acrylate, neopentaerythritol tetra(meth)acrylate, dineopentaerythritol hexa(meth)acrylate, 1,4-butane Glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, dimethylol tricyclodecane Multifunctional acrylates such as di(meth)acrylate; polyester oligo(meth)acrylate, polyurethane oligo(meth)acrylate, etc.

摻配能量線硬化性之單體及/或寡聚物(B)時,相對於能量線硬化性黏著劑的總質量,能量線硬化性黏著劑中之能量線硬化性之單體及/或寡聚物(B)的含量較佳為5質量%至80質量%,更佳為20質量%至60質量%。 When blending energy ray curable monomers and/or oligomers (B), relative to the total mass of the energy ray curable adhesive, the energy ray curable monomer and/or energy ray curable adhesive The content of the oligomer (B) is preferably from 5 to 80% by mass, more preferably from 20 to 60% by mass.

於此,使用紫外線作為用以將能量線硬化性樹脂組成物硬化的能量線時,較佳為添加光聚合起始劑(C),藉由使用光聚合起始劑(C)可減少聚合硬化時間及光線照射量。 Here, when ultraviolet rays are used as the energy ray for curing the energy ray curable resin composition, it is preferable to add a photopolymerization initiator (C). The use of the photopolymerization initiator (C) can reduce polymerization hardening. Time and amount of light exposure.

光聚合起始劑(C)具體可舉例如二苯基酮、苯乙酮、安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基縮酮、2,4-二乙基噻噸酮(2,4-diethylthioxanthen)、1-羥基環己基苯酮、苄基二苯硫醚、四甲基秋蘭姆單硫化物(tetramethylthiuram monosulfide)、偶氮雙異丁腈、二苯基乙二酮、二苄醚、二乙醯、β-氯蒽醌、(2,4,6-三甲苄基二苯基)膦氧化物、2-苯并噻唑-N,N-二乙基二硫胺甲酸酯、寡聚{2-羥基-2-甲基-1-〔4-(1-丙烯基)苯〕丙酮}、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等。該等可單獨使用或並用2種以上。 Specific examples of the photopolymerization initiator (C) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, Benzoin dimethyl ketal, 2,4-diethylthioxanthen (2,4-diethylthioxanthen), 1-hydroxycyclohexyl phenone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide ( tetramethylthiuram monosulfide), azobisisobutyronitrile, diphenylethylenedione, dibenzyl ether, diacetyl, β-chloroanthraquinone, (2,4,6-trimethylbenzyldiphenyl) phosphine oxide, 2-benzothiazole-N,N-diethyldithiocarbamate, oligomer {2-hydroxy-2-methyl-1-[4-(1-propenyl)phenyl]acetone}, 2, 2-Dimethoxy-1,2-diphenylethane-1-one, etc. These can be used individually or in combination of 2 or more types.

相對於能量線硬化型共聚物(A)100質量分(摻配能量線硬化性之單體及/或寡聚物(B)時,則為能量線硬化型共聚物(A)及能量線硬化性之單體及/或寡聚物(B)之合計量100質量分),光聚合起始劑(C)之使用量較佳為0.1質量分至10質量分,更佳為0.5質量分至6質量分。 Relative to 100 mass points of energy-ray-curable copolymer (A) (when energy-ray-curable monomers and/or oligomers (B) are blended, it is energy-ray-curable copolymer (A) and energy-ray-curable The total amount of the monomer and/or oligomer (B) (B) is 100 mass parts), the usage amount of the photopolymerization initiator (C) is preferably 0.1 to 10 mass parts, more preferably 0.5 to 10 mass parts 6 quality points.

能量線硬化性黏著劑中除了前述成分以外亦可適當摻配其他成分。其他成分可舉例如非能量線硬化性之聚合物成分或寡聚物成分(D)、交聯劑(E)等。 In addition to the aforementioned components, other components may be appropriately blended in the energy ray curable adhesive. Examples of other components include non-energy-ray curable polymer components or oligomer components (D), crosslinking agents (E), and the like.

非能量線硬化性之聚合物成分或寡聚物成分(D)可舉例如聚丙烯酸酯、聚酯、聚胺甲酸乙酯、聚碳酸酯、聚烯烴等,較佳為重量平均分子量(Mw)為3000至250萬的聚合物或寡聚物。 Examples of non-energy-ray curable polymer components or oligomer components (D) include polyacrylates, polyesters, polyurethanes, polycarbonates, polyolefins, etc. The weight average molecular weight (Mw) is preferred. It is a polymer or oligomer in the range of 3,000 to 2.5 million.

交聯劑(E)可使用多官能性化合物,前述多官能性化合物具有與能量線硬化型共聚物(A)等所含有的官能基的反應性。如此多官能性化合物可舉例如異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、氮丙環化合物、聯氨化合物、醛化合物、噁唑啉化合物、金屬烷氧化合物、金屬螯合化合物、金屬鹽、銨鹽、反應性苯酚樹脂等。 As the crosslinking agent (E), a polyfunctional compound can be used, and the aforementioned polyfunctional compound has reactivity with a functional group contained in the energy ray curable copolymer (A) or the like. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxy compounds, metal chelate compounds, and metal salts. , Ammonium salt, reactive phenol resin, etc.

藉由將該等其他成分(D)、(E)摻配於能量線硬化性黏著劑,而可改善黏著劑層42硬化前之黏著性及剝離性、硬化後之強度、與其他層之接著性、保存安定性等。該等其他成分的摻配量並無特別限定,可適當決定在相對於能量線硬化型共聚物(A)100質量分為0質量分至40質量分之範圍內。 By blending these other components (D) and (E) into the energy ray curable adhesive, the adhesiveness and peelability of the adhesive layer 42 before curing, the strength after curing, and the adhesion to other layers can be improved Performance, preservation stability, etc. The blending amount of these other components is not particularly limited, and can be appropriately determined in the range of 0 to 40 parts by mass relative to 100 parts by mass of the energy ray curable copolymer (A).

接著說明能量線硬化性黏著劑係以非能量線硬化性聚合物成分與能量線硬化性多官能單體及/或寡聚物之混合物為主成分的情形。 Next, the case where the energy-ray-curable adhesive is mainly composed of a mixture of a non-energy-ray-curable polymer component and an energy-ray-curable polyfunctional monomer and/or oligomer will be described.

非能量線硬化性聚合物成分可使用例如與前述丙烯酸系共聚物(a1)相同之成分。相對於能量線硬化性樹脂組成物的總質量,能量線硬化性樹脂組成物中的非能量線硬化性聚合物成分的含量較佳為20質量%至99.9質量%,更佳為30質量%至80質量%。 For the non-energy-ray curable polymer component, for example, the same components as the aforementioned acrylic copolymer (a1) can be used. Relative to the total mass of the energy ray curable resin composition, the content of the non-energy ray curable polymer component in the energy ray curable resin composition is preferably 20% by mass to 99.9% by mass, more preferably 30% by mass to 80% by mass.

能量線硬化性多官能單體及/或寡聚物可選擇與前述成分(B)相同者。非能量線硬化性聚合物成分與能量線硬化性多官能單體及/或寡 聚物的摻配比,較佳為相對於聚合物成分100質量分多官能單體及/或寡聚物為10質量分至150質量分,更佳為25質量分至100質量分。 The energy ray-curable polyfunctional monomer and/or oligomer can be selected from the same as the aforementioned component (B). Non-energy-ray-curable polymer components and energy-ray-curable polyfunctional monomers and/or oligomers The blending ratio of the polymer is preferably 10 parts by mass to 150 parts by mass relative to 100 parts by mass of the polymer component of the polyfunctional monomer and/or oligomer, and more preferably 25 parts by mass to 100 parts by mass.

此時與前述同樣地可適當摻配光聚合起始劑(C)或交聯劑(E)。 In this case, the photopolymerization initiator (C) or the crosslinking agent (E) can be appropriately blended in the same manner as described above.

在使用保護膜形成用複合片3之各步驟中具有適當功能時,黏著劑層42的厚度並無特別限定。具體而言,黏著劑層42的厚度較佳為1μm至50μm,更佳為2μm至30μm,又更佳為3μm至20μm。 When it has an appropriate function in each step of using the composite sheet 3 for forming a protective film, the thickness of the adhesive layer 42 is not specifically limited. Specifically, the thickness of the adhesive layer 42 is preferably 1 μm to 50 μm, more preferably 2 μm to 30 μm, and still more preferably 3 μm to 20 μm.

2.保護膜形成膜 2. Protective film forming film

保護膜形成膜1係為了在工件或加工前述工件所得之加工物形成保護膜者。此保護膜係由保護膜形成膜1所構成,較佳為由硬化之保護膜形成膜1所構成。工件可舉例如半導體晶圓等,加工前述工件所得之加工物可舉例如半導體晶片,但本發明並不限於該等。又,工件為半導體晶圓時,保護膜係形成於半導體晶圓之內面側(沒有形成凸塊等電極之側)。 The protective film forming film 1 is for forming a protective film on a workpiece or a processed product obtained by processing the aforementioned workpiece. This protective film is composed of a protective film forming film 1, preferably a cured protective film forming film 1. The workpiece may be, for example, a semiconductor wafer, and the processed product obtained by processing the foregoing workpiece may be, for example, a semiconductor wafer, but the present invention is not limited to these. In addition, when the workpiece is a semiconductor wafer, the protective film is formed on the inner surface side of the semiconductor wafer (the side where the bumps and other electrodes are not formed).

保護膜形成膜1可為由單層或由複數層所構成,但考慮控制光線穿透率之容易性及製造成本,較佳為由單層所構成。 The protective film forming film 1 may be composed of a single layer or a plurality of layers, but considering the ease of controlling the light transmittance and the manufacturing cost, it is preferably composed of a single layer.

保護膜形成膜1較佳為由未硬化的硬化性接著劑而形成。此時,於保護膜形成膜1疊合半導體晶圓等工件後再硬化保護膜形成膜1,藉此可將保護膜牢固地接著於工件,可對於晶片等形成具有耐久性的保護膜。 The protective film forming film 1 is preferably formed of an uncured curable adhesive. In this case, the protective film forming film 1 is hardened after stacking a work such as a semiconductor wafer on the protective film forming film 1, whereby the protective film can be firmly adhered to the work, and a durable protective film can be formed for wafers and the like.

保護膜形成膜1較佳為在常溫下具有黏著性、或是藉由加熱發揮黏著性。藉此,在如前述保護膜形成膜1疊合半導體晶圓等工件時可使兩者貼合。因此,於硬化保護膜形成膜1前可確實決定位置。 The protective film forming film 1 preferably has adhesiveness at room temperature or exhibits adhesiveness by heating. Thereby, when a work such as a semiconductor wafer is laminated on the protective film forming film 1 described above, the two can be bonded together. Therefore, the position can be surely determined before the film 1 is formed by curing the protective film.

構成具有前述特性之保護膜形成膜1之硬化性接著劑,較佳為含有硬化性成分與黏結劑聚合物成分。硬化性成分可使用熱硬化性成 分、能量線硬化性成分或該等混合物,但較佳為使用熱硬化性成分。亦即,保護膜形成膜1較佳為由熱硬化性接著劑所構成。 The curable adhesive constituting the protective film forming film 1 having the aforementioned characteristics preferably contains a curable component and a binder polymer component. The hardening component can be made with thermosetting It is a component, an energy ray curable component, or a mixture of these, but it is preferable to use a thermosetting component. That is, the protective film forming film 1 is preferably composed of a thermosetting adhesive.

熱硬化性成分可舉例如環氧樹脂、苯酚樹脂、三聚氰胺樹脂、尿素樹脂、聚酯樹脂、胺甲酸乙酯樹脂、丙烯樹脂、聚醯亞胺樹脂、苯并噁嗪(benzooxazine)樹脂等及該等之混合物。其中熱硬化性成分較佳為使用環氧樹脂、苯酚樹脂及該等之混合物。 Examples of thermosetting components include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, benzooxazine resins, etc. And other mixtures. Among them, the thermosetting component preferably uses epoxy resin, phenol resin and a mixture of these.

環氧樹脂具有受熱後會三次元網狀化且形成牢固被膜之性質。前述環氧樹脂雖可使用公知之各種環氧樹脂,但通常較佳為數量平均分子量為300至2000左右者,更佳為數量平均分子量為300至500者。更佳為將數量平均分子量為330至400且常態為液狀之環氧樹脂,與數量平均分子量為400至2500、較佳為數量平均分子量為500至2000且常溫為固體之環氧樹脂混合的形式使用。又,環氧樹脂的環氧當量較佳為50g/eq至5000g/eq。又,可藉由使用GPC之方法而求得環氧樹脂的數量平均分子量。 Epoxy resin has the property of being three-dimensional network after being heated and forming a firm film. Although various known epoxy resins can be used as the aforementioned epoxy resin, it is usually preferably one with a number average molecular weight of about 300 to 2000, and more preferably one with a number average molecular weight of 300 to 500. It is more preferable to mix an epoxy resin having a number average molecular weight of 330 to 400 and a liquid state in normal state with an epoxy resin having a number average molecular weight of 400 to 2500, preferably a number average molecular weight of 500 to 2000, and which is solid at room temperature. Form use. In addition, the epoxy equivalent of the epoxy resin is preferably 50 g/eq to 5000 g/eq. In addition, the number average molecular weight of the epoxy resin can be obtained by the method using GPC.

前述環氧樹脂具體可舉例如雙酚A、雙酚F、間苯二酚、苯酚醛清漆(phenylnovolac)、甲酚酚醛清漆等苯酚類的環氧丙基醚;丁二醇、聚乙二醇、聚丙二醇等醇類的環氧丙基醚;鄰苯二甲酸、間苯二甲酸、四氫鄰苯二甲酸等羧酸的環氧丙基醚;將苯胺三聚異氰酸酯等的氮原子所鍵結之活性氫以環氧丙基取代之環氧丙基型或烷基環氧丙基型的環氧樹脂;如二環氧化乙烯環已烷、3,4-環氧環己基甲基-3,4-二環已烷羧酸酯、及2-(3,4-環氧基)環己基-5,5-螺(3,4-環氧基)環已烷-間二噁烷等例如藉由氧化而在分子內的碳-碳雙鍵導入環氧基者,亦即脂環型環氧化物。此外亦可使用具有聯苯基骨架、二環己二烯骨架、萘骨架等之環氧樹脂。 Specific examples of the aforementioned epoxy resin include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenylnovolac, and cresol novolac; butylene glycol, polyethylene glycol , Glycidyl ether of alcohols such as polypropylene glycol; glycidyl ether of carboxylic acids such as phthalic acid, isophthalic acid, tetrahydrophthalic acid, etc.; bonding the nitrogen atom of aniline isocyanate, etc. Epoxy propyl or alkyl glycidyl type epoxy resin in which the active hydrogen is substituted by glycidyl group; such as diepoxyethylene cyclohexane, 3,4-epoxycyclohexylmethyl-3 ,4-Dicyclohexane carboxylate, and 2-(3,4-epoxy)cyclohexyl-5,5-spiro(3,4-epoxy)cyclohexane-m-dioxane, etc., for example When an epoxy group is introduced into the carbon-carbon double bond in the molecule by oxidation, that is, an alicyclic epoxide. In addition, epoxy resins having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, and the like can also be used.

該等之中,環氧樹脂較佳為雙酚系環氧丙基型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、及苯酚酚醛清漆型環氧樹脂。該等環氧樹脂可單獨使用1種或組合2種以上使用。 Among them, the epoxy resin is preferably a bisphenol-based glycidyl type epoxy resin, an o-cresol novolak type epoxy resin, and a phenol novolak type epoxy resin. These epoxy resins can be used individually by 1 type or in combination of 2 or more types.

使用環氧樹脂時,較佳為併用作為助劑之熱活性型潛在性環氧樹脂硬化劑。熱活性型潛在性環氧樹脂硬化劑係於室溫不會與環氧樹脂產生反應,但藉由加熱至一定溫度以上會活性化並與環氧樹脂反應之類型之硬化劑。熱活性型潛在性環氧樹脂硬化劑的活性化方法有以下方法:藉由加熱之化學反應生成活性種(陰離子、陽離子)之方法;於室溫附近安定地分散於環氧樹脂中,在高溫下與環氧樹脂相溶、溶解並開始硬化反應之方法;藉由內含分子篩類型之硬化劑而在高溫溶出並開始硬化反應之方法;使用微膠囊之方法等。 When an epoxy resin is used, it is preferable to use a thermally active latent epoxy resin hardener as an auxiliary agent in combination. Thermally active latent epoxy resin hardener is a type of hardener that does not react with epoxy resin at room temperature, but is activated and reacts with epoxy resin when heated to a certain temperature or higher. The activation method of the thermally active latent epoxy resin hardener includes the following methods: the method of generating active species (anions, cations) by the chemical reaction of heating; stable dispersion in the epoxy resin near room temperature, at high temperature The method of dissolving with epoxy resin, dissolving and starting the hardening reaction; the method of dissolving out at high temperature by containing the hardener of molecular sieve type and starting the hardening reaction; the method of using microcapsules, etc.

熱活性型潛在性環氧樹脂硬化劑的具體例可舉例如各種鎓鹽(onium salt)、二質子酸二醯肼化合物、二氰二胺、胺加成物硬化劑、咪唑化合物等之高熔點活性氫化合物等。該等熱活性型潛在性環氧樹脂硬化劑可單獨使用1種或組合2種以上使用。相對於環氧樹脂100重量分,前述之熱活性型潛在性環氧樹脂硬化劑的使用比例較佳為0.1重量分至20重量分,更佳為0.2重量分至10重量分,又更佳為0.3重量分至5重量分。 Specific examples of thermally active latent epoxy resin hardeners include various onium salts, diprotic acid dihydrazine compounds, dicyandiamine, amine adduct hardeners, imidazole compounds, etc. Active hydrogen compounds, etc. These thermally active latent epoxy resin hardeners can be used individually by 1 type or in combination of 2 or more types. Relative to 100 parts by weight of epoxy resin, the use ratio of the aforementioned thermally active latent epoxy resin hardener is preferably 0.1 parts by weight to 20 parts by weight, more preferably 0.2 parts by weight to 10 parts by weight, and still more preferably 0.3 weight points to 5 weight points.

苯酚系樹脂可使用烷基苯酚、多元苯酚、萘酚等苯酚類與醛類的縮聚物等,並無特別限定。具體而言例如可使用苯酚酚醛清漆樹脂、鄰甲酚酚醛清漆樹脂、對甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、二環戊二烯甲酚樹脂、聚對乙苯酚樹脂、雙酚A型酚醛清漆樹脂、或該等之改質物等。 As the phenol resin, polycondensates of phenols and aldehydes, such as alkylphenols, polyhydric phenols, and naphthols, can be used, and they are not particularly limited. Specifically, for example, phenol novolak resin, ortho-cresol novolak resin, p-cresol novolak resin, tertiary butylphenol novolak resin, dicyclopentadiene cresol resin, poly(p-cresol) Phenolic novolac resins, or their modified products, etc.

藉由加熱可輕易地使該等苯酚系樹脂所含之苯酚性羥基與前述環氧樹脂之環氧基進行加成反應,並形成耐衝撃性高的硬化物。因此,可併用環氧樹脂與苯酚系樹脂作為熱硬化性成分。 By heating, the phenolic hydroxyl group contained in the phenol-based resin can easily undergo an addition reaction with the epoxy group of the aforementioned epoxy resin to form a cured product with high impact resistance. Therefore, an epoxy resin and a phenol resin can be used together as a thermosetting component.

黏結劑聚合物成分可賦予保護膜形成膜1適當黏性,並提升保護膜形成用複合片3的操作性。黏結劑聚合物的重量平均分子量通常為5萬至200萬,較佳為10萬至150萬,更佳為20萬至100萬。若分子量過低則保護膜形成膜1的膜形成不足,若過高則與其他成分的相溶性惡化,結果會無法均勻地形成膜。此黏結劑聚合物可使用例如丙烯酸系聚合物、聚酯樹脂、苯氧樹脂、胺甲酸乙酯樹脂、矽酮樹脂、橡膠系聚合物等,較佳為丙烯酸系聚合物。 The binder polymer component can impart appropriate viscosity to the protective film forming film 1 and improve the operability of the protective film forming composite sheet 3. The weight average molecular weight of the binder polymer is usually 50,000 to 2 million, preferably 100,000 to 1.5 million, and more preferably 200,000 to 1 million. If the molecular weight is too low, the film formation of the protective film forming film 1 is insufficient, and if it is too high, the compatibility with other components deteriorates, and as a result, the film cannot be uniformly formed. As the binder polymer, for example, acrylic polymer, polyester resin, phenoxy resin, urethane resin, silicone resin, rubber polymer, etc. can be used, and acrylic polymer is preferred.

丙烯酸系聚合物可舉例如由源自(甲基)丙烯酸酯單體與(甲基)丙烯酸衍生物之構成單元所構成之(甲基)丙烯酸酯共聚物。在此,(甲基)丙烯酸酯單體較佳為使用烷基碳數為1至18之(甲基)丙烯酸烷酯,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯等。又,(甲基)丙烯酸衍生物可舉例如(甲基)丙烯酸、(甲基)丙烯酸環氧丙酯、(甲基)丙烯酸羥乙酯等。 Examples of the acrylic polymer include (meth)acrylate copolymers composed of structural units derived from (meth)acrylate monomers and (meth)acrylic acid derivatives. Here, the (meth)acrylate monomer is preferably an alkyl (meth)acrylate with an alkyl group of 1 to 18 carbon atoms, such as methyl (meth)acrylate, ethyl (meth)acrylate, ( Propyl meth)acrylate, butyl (meth)acrylate, etc. In addition, the (meth)acrylic acid derivative includes, for example, (meth)acrylic acid, glycidyl (meth)acrylate, and hydroxyethyl (meth)acrylate.

前述之中,若使用甲基丙烯酸環氧丙酯等作為構成單元並於丙烯酸系聚合物導入環氧丙基,則會提升與前述作為熱硬化性成分之環氧樹脂的相溶性,使保護膜形成膜1硬化後之玻璃轉化溫度(Tg)變高,並提升耐熱性。又,前述之中,若使用丙烯酸羥乙酯等作為構成單元並於丙烯酸系聚合物導入羥基,則可控制對工件之密接性與黏著物性。 Among the foregoing, if glycidyl methacrylate or the like is used as a structural unit and a glycidyl group is introduced into the acrylic polymer, the compatibility with the epoxy resin as the thermosetting component mentioned above will be improved and the protective film The glass transition temperature (Tg) of the formed film 1 after hardening becomes higher, and the heat resistance is improved. In addition, in the foregoing, if hydroxyethyl acrylate or the like is used as a structural unit and a hydroxyl group is introduced into the acrylic polymer, the adhesion to the workpiece and the adhesive properties can be controlled.

使用丙烯酸系聚合物作為黏結劑聚合物時,前述聚合物的重量平均分子量較佳為10萬以上,更佳為15萬至100萬。丙烯酸系聚合 物的玻璃轉化溫度通常為20℃以下,較佳為-70℃至0℃左右,且於常溫(23℃)具有黏著性。 When an acrylic polymer is used as the binder polymer, the weight average molecular weight of the aforementioned polymer is preferably 100,000 or more, more preferably 150,000 to 1,000,000. Acrylic polymerization The glass transition temperature of the material is usually below 20°C, preferably about -70°C to 0°C, and has adhesiveness at room temperature (23°C).

熱硬化性成分與黏結劑聚合物成分之摻配比率,相對於黏結劑聚合物成分100重量分熱硬化性成分較佳為50重量分至1500重量分,更佳為70重量分至1000重量分,又更佳為80重量分至800重量分摻配。以前述比例摻配熱硬化性成分與黏結劑聚合物成分,則可在硬化前顯示適度黏性並可安定地進行貼黏操作,且硬化後可得被膜強度優異之保護膜。 The blending ratio of the thermosetting component and the binder polymer component is preferably 50 parts by weight to 1500 parts by weight relative to 100 parts by weight of the binder polymer component, more preferably 70 parts by weight to 1000 parts by weight , And more preferably blended from 80 to 800 parts by weight. By blending the thermosetting component and the binder polymer component in the aforementioned ratio, it can exhibit moderate viscosity before hardening and can perform the sticking operation stably, and after hardening, a protective film with excellent film strength can be obtained.

保護膜形成膜1較佳為含有著色劑及/或充填劑,更佳為含有著色劑及充填劑兩者。 The protective film forming film 1 preferably contains a colorant and/or a filler, and more preferably contains both a colorant and a filler.

著色劑可使用公知之無機系顏料、有機系顏料、有機系染料等,但由提高光線穿透率控制性的觀點來看,著色劑較佳為含有有機系著色劑。由提升著色劑的化學的安定性(具體而言可舉例如溶出難易度、產生移染之難易度、經時變化的程度)的觀點來看,著色劑較佳為含有顏料。 As the coloring agent, known inorganic pigments, organic pigments, organic dyes, etc. can be used, but from the viewpoint of improving light transmittance controllability, the coloring agent preferably contains an organic coloring agent. From the viewpoint of improving the chemical stability of the colorant (specifically, for example, the ease of elution, the ease with which migration occurs, and the degree of change over time), the colorant preferably contains a pigment.

充填劑可舉例如結晶二氧化矽、熔融二氧化矽、合成二氧化矽等二氧化矽;及氧化鋁、玻璃球等無機充填劑。該等之中,充填劑較佳為二氧化矽,更佳為合成二氧化矽,最適合為可有效去除α線的線源之類型之合成二氧化矽,前述α線為造成半導體裝置誤動作的主因。充填劑的形狀可舉出球形、針狀、不定形等,但較佳為球形,更佳為真球形。若充填劑為球形或真球形則光線不容易漫反射(diffused reflection),且容易控制保護膜形成膜1的光線穿透率的光譜圖譜。 The filler can include, for example, silica such as crystalline silica, fused silica, and synthetic silica; and inorganic fillers such as alumina and glass balls. Among them, the filler is preferably silicon dioxide, more preferably synthetic silicon dioxide, and is most suitable for the type of synthetic silicon dioxide that can effectively remove the line source of the alpha line. The aforementioned alpha line is the cause of the malfunction of the semiconductor device. The main reason. The shape of the filler may include a spherical shape, a needle shape, an amorphous shape, etc., but a spherical shape is preferable, and a true spherical shape is more preferable. If the filler is spherical or true spherical, the light is not easily diffused reflection, and it is easy to control the spectrum of the light transmittance of the protective film forming film 1.

又,保護膜形成膜1亦可含有耦合劑。藉由含有耦合劑,在保護膜形成膜1硬化後,可在不損及保護膜耐熱性下提升保護膜與工件的接著性、密接性,同時可提升耐水性(耐濕熱性)。考慮其汎用性與成本優勢等,耦合劑較佳為矽烷耦合劑。 In addition, the protective film forming film 1 may contain a coupling agent. By containing the coupling agent, after the protective film forming film 1 is cured, the adhesion and adhesion between the protective film and the workpiece can be improved without impairing the heat resistance of the protective film, and the water resistance (humid heat resistance) can be improved. Considering its versatility and cost advantages, the coupling agent is preferably a silane coupling agent.

矽烷耦合劑可舉例如γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙甲二乙氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-(甲基丙烯醯氧基丙基)三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-6-(胺基乙基)-γ-胺基丙基甲基二乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷、γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、γ-巰基丙甲基二甲氧矽烷、雙(3-三乙氧基矽基丙基)四硫烷(bis(3-ethoxysilylpropyl)tetrasulfane)、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷等。矽烷耦合劑可單獨使用該等中的1種或混合2種以上使用。 The silane coupling agent includes, for example, γ-glycidoxy propyl trimethoxy silane, γ-glycidoxy propyl methyl diethoxy silane, β-(3,4-epoxycyclohexyl) ethyl trimethyl Oxysilane, γ-(methacryloxypropyl)trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropyltrimethyl Oxysilane, N-6-(aminoethyl)-γ-aminopropylmethyl diethoxysilane, N-phenyl-γ-aminopropyl trimethoxysilane, γ-ureidopropyl Triethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl) tetrasulfane (bis(3-ethoxysilylpropyl) ) tetrasulfane), methyl trimethoxy silane, methyl triethoxy silane, vinyl trimethoxy silane, vinyl triacetoxy silane, imidazole silane, etc. The silane coupling agent can be used singly or as a mixture of two or more.

為了調節硬化前的凝集力,保護膜形成膜1可含有有機多元異氰酸化合物、有機多元亞胺化合物、有機金屬螯合化合物等交聯劑。又,為了抑制靜電並提升晶片的信頼性,保護膜形成膜1可含有抗靜電劑。再者,為了提升保護膜的阻燃性能及作為包裝的信頼性,保護膜形成膜1可含有磷酸化合物、溴化合物、磷系化合物等阻燃劑。 In order to adjust the cohesive force before curing, the protective film forming film 1 may contain a cross-linking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, and an organometallic chelate compound. In addition, in order to suppress static electricity and improve the reliability of the wafer, the protective film forming film 1 may contain an antistatic agent. Furthermore, in order to improve the flame retardancy of the protective film and the reliability of packaging, the protective film forming film 1 may contain flame retardants such as phosphoric acid compounds, bromine compounds, and phosphorus compounds.

為了有效發揮作為保護膜之功能,保護膜形成膜1的厚度較佳為3μm至300μm,更佳為5μm至200μm,又更佳為7μm至100μm。 In order to effectively function as a protective film, the thickness of the protective film forming film 1 is preferably 3 μm to 300 μm, more preferably 5 μm to 200 μm, and still more preferably 7 μm to 100 μm.

3.治具用黏著劑層 3. Adhesive layer for jig

構成治具用黏著劑層5之黏著劑較佳為具有所求的黏著力及再剝離性,例如可使用丙烯酸系黏著劑、橡膠系黏著劑、矽酮系黏著劑、胺甲酸乙酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等。該等之中治具用黏著劑層5較佳為丙烯酸系黏著劑,因與環狀架等治具的密接性高,於切割步驟等中可有效抑制保護膜形成用複合片3由環狀架等剝離。又,治具用黏著劑層5之厚度方向內部亦可介置有作為芯材之基材。 The adhesive constituting the adhesive layer 5 for jigs preferably has the required adhesiveness and releasability. For example, acrylic adhesives, rubber-based adhesives, silicone-based adhesives, and urethane-based adhesives can be used. Adhesives, polyester adhesives, polyvinyl ether adhesives, etc. Among them, the adhesive layer 5 for jigs is preferably an acrylic adhesive. Since it has high adhesion with jigs such as ring frames, it can effectively prevent the composite sheet 3 for forming the protective film from being ringed during the cutting step. The rack is peeled off. In addition, a base material as a core material may be interposed in the thickness direction of the adhesive layer 5 for jigs.

另一方面,由對環狀架等治具之接著性的觀點來看,治具用黏著劑層5的厚度較佳為5μm至200μm,更佳為10μm至100μm。 On the other hand, from the viewpoint of adhesion to a jig such as a ring frame, the thickness of the jig adhesive layer 5 is preferably 5 μm to 200 μm, and more preferably 10 μm to 100 μm.

4.剝離片 4. Peel off sheet

本實施形態之剝離片6係保護保護膜形成膜1及治具用黏著劑層5,直到使用保護膜形成用複合片3為止。 The peeling sheet 6 of this embodiment protects the protective film formation film 1 and the adhesive layer 5 for jigs until the composite sheet 3 for protective film formation is used.

剝離片6的構成任意,例如以剝離劑等將塑膠膜剝離處理。塑膠膜具體可舉例如聚對苯二酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等聚酯膜;及聚丙烯、聚乙烯等聚烯烴膜。剝離劑例如可使用矽酮系、氟系、長鎖烷系等,但該等之中較佳為便宜且性能安定的矽酮系。剝離片6的厚度無特別限定,但通常為20μm至250μm左右。 The configuration of the release sheet 6 is arbitrary, and, for example, the plastic film is peeled off with a release agent or the like. Specific examples of the plastic film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; and polyolefin films such as polypropylene and polyethylene. As the release agent, for example, silicone-based, fluorine-based, lanthanide-based, etc. can be used, but among these, a silicone-based, which is inexpensive and has stable performance, is preferred. The thickness of the release sheet 6 is not particularly limited, but is usually about 20 μm to 250 μm.

5.保護膜形成用複合片的製造方法 5. Manufacturing method of composite sheet for protective film formation

較佳為分別製作含有保護膜形成膜1的第1積層體、以及含有支持片4的第2積層體,之後使用第1積層體及第2積層體並積層保護膜形成膜1與支持片4,藉此可製造保護膜形成用複合片3,但並不限定於此。 It is preferable to separately prepare the first laminate containing the protective film forming film 1 and the second laminate containing the support sheet 4, and then use the first laminate and the second laminate to laminate the protective film forming film 1 and the support sheet 4 The composite sheet 3 for forming a protective film can be manufactured by this, but it is not limited to this.

在第1積層體的製造中,係於第1剝離片的剝離面形成保護膜形成膜1。具體而言係先調製保護膜形成膜用塗布劑,前述保護膜形成膜用塗布劑係含有構成保護膜形成膜1的硬化性接著劑並可視需要進一步含有溶媒,再藉由輥塗布器、刀塗布器、輥刀塗布器、氣刀塗布器、模具塗布器、棒塗布器、凹版塗布器、簾幕塗布器等塗布機塗布於第1剝離片的剝離面並乾燥,形成保護膜形成膜1。接著將第2剝離片的剝離面重疊壓於保護膜形成膜1的露出面,得到由2片剝離片夾持保護膜形成膜1的積層體(第1積層體)。 In the manufacture of the first laminate, the protective film forming film 1 is formed on the peeling surface of the first peeling sheet. Specifically, a coating agent for forming a protective film is prepared first. The aforementioned coating agent for forming a protective film contains a curable adhesive that constitutes the protective film forming film 1 and optionally a solvent. Coaters such as coaters, roll knife coaters, air knife coaters, die coaters, bar coaters, gravure coaters, curtain coaters, etc. are applied to the release surface of the first release sheet and dried to form a protective film to form a film 1 . Next, the release surface of the second release sheet was laminated and pressed on the exposed surface of the protective film forming film 1 to obtain a laminate (first laminate) in which the protective film forming film 1 was sandwiched by two release sheets.

此第1積層體中,可視需要從第1剝離片或第2剝離片側以裁切刃或雷射照射施以半切線(half cut),使保護膜形成膜1(及第2剝離 片)形成為所求形狀,例如圓形等。此時可適當除去因半切線所產生之保護膜形成膜1及第2剝離片之多餘部分。 In this first laminate, if necessary, a half cut may be applied from the side of the first release sheet or the second release sheet with a cutting blade or laser irradiation to form a protective film into a film 1 (and a second release sheet). The sheet) is formed into a desired shape, such as a circle. At this time, the excess portions of the protective film forming film 1 and the second release sheet generated by the half-cut line can be appropriately removed.

此外,在第2積層體的製造中,係於第3剝離片的剝離面塗布黏著劑層用塗布劑,前述黏著劑層用塗布劑係含有構成黏著劑層42的黏著劑並可視需要進一步含有溶媒,乾燥而形成黏著劑層42。之後將基材41壓於黏著劑層42的露出面上,得到包括支持片4及第3剝離片之積層體(第2積層體),前述支持片4係包括基材41及黏著劑層42。 In addition, in the production of the second laminate, the adhesive layer coating agent is applied to the release surface of the third release sheet. The adhesive layer coating agent contains the adhesive constituting the adhesive layer 42 and may further contain The solvent dries to form the adhesive layer 42. After that, the substrate 41 is pressed on the exposed surface of the adhesive layer 42 to obtain a laminate (second laminate) including the support sheet 4 and the third release sheet. The support sheet 4 includes the substrate 41 and the adhesive layer 42 .

於此,黏著劑層42由能量線硬化性黏著劑形成時,可於此階段對黏著劑層42照射能量線並硬化黏著劑層42,亦可在與保護膜形成膜1積層後再硬化黏著劑層42。又,在與保護膜形成膜1積層後再硬化黏著劑層42時,可於切割步驟前硬化黏著劑層42,亦可於切割步驟後硬化黏著劑層42。 Here, when the adhesive layer 42 is formed of an energy-ray curable adhesive, the adhesive layer 42 can be irradiated with energy rays at this stage to harden the adhesive layer 42, or the adhesive layer 42 can be hardened and adhered after being laminated with the protective film to form the film 1剂层42。 Agent layer 42. In addition, when the adhesive layer 42 is hardened after the film 1 is laminated with the protective film, the adhesive layer 42 may be hardened before the cutting step, or the adhesive layer 42 may be hardened after the cutting step.

能量線通常使用紫外線、電子束等。能量線的照射量係因能量線種類而異,例如紫外線之光量較佳為50mJ/cm2至1000mJ/cm2,更佳為100mJ/cm2至500mJ/cm2。又,電子束較佳為10krad至1000krad左右。 The energy line usually uses ultraviolet rays, electron beams, etc. The irradiation amount of the energy ray varies with the type of the energy ray. For example, the amount of ultraviolet light is preferably 50 mJ/cm 2 to 1000 mJ/cm 2 , more preferably 100 mJ/cm 2 to 500 mJ/cm 2 . In addition, the electron beam is preferably about 10 krad to 1000 krad.

如以上方式得到第1積層體及第2積層體,將第1積層體中的第2剝離片剝離並將第2積層體中的第3剝離片剝離,再將第1積層體露出之保護膜形成膜1與第2積層體露出之支持片4的黏著劑層42重疊壓著。支持片4係視需要施以半切線,並可形成具有所求形狀,例如具有較保護膜形成膜1大的徑之圓形等。此時可適當去除由半切線所產生之支持片4之多餘部分。 The first laminate and the second laminate are obtained in the above manner, the second release sheet in the first laminate is peeled off, and the third release sheet in the second laminate is peeled off, and then the first laminate is exposed to the protective film The forming film 1 and the adhesive layer 42 of the supporting sheet 4 exposed by the second laminate are laminated and pressed. The support sheet 4 is half-cut as necessary, and can be formed into a desired shape, for example, a circle having a larger diameter than the protective film forming film 1. At this time, the redundant part of the support sheet 4 produced by the half-cut line can be appropriately removed.

如此可得到保護膜形成用複合片3,係包括在基材41上積層黏著劑層42所構成之支持片4、積層於支持片4的黏著劑層42側之保護膜形成膜1、以及積層於保護膜形成膜1中與支持片4之相反側之第1 剝離片。最後將第1剝離片剝離後,於保護膜形成膜1中與支持片4相反側的邊緣部形成治具用黏著劑層5。治具用黏著劑層5可藉由與前述黏著劑層42相同之方法塗布而形成。 In this way, a composite sheet 3 for forming a protective film is obtained, which includes a support sheet 4 formed by laminating an adhesive layer 42 on a substrate 41, a protective film forming film 1 laminated on the adhesive layer 42 side of the support sheet 4, and a laminated layer The first on the side opposite to the support sheet 4 in the protective film forming film 1 Peel off the piece. Finally, after peeling the first release sheet, the adhesive layer 5 for jigs is formed on the edge portion of the protective film forming film 1 on the opposite side to the support sheet 4. The adhesive layer 5 for jigs can be formed by applying the same method as the adhesive layer 42 described above.

6.保護膜形成用複合片的使用方法 6. How to use the composite sheet for forming a protective film

作為本實施形態中保護膜形成用複合片3之一使用例,以下說明由作為工件之半導體晶圓製造具有保護膜之晶片的方法。 As an example of use of the composite sheet 3 for forming a protective film in this embodiment, a method of manufacturing a wafer with a protective film from a semiconductor wafer as a workpiece will be described below.

首先將捲繞輥狀的保護膜形成用複合片3拉出,如圖2所示,將保護膜形成用複合片3的保護膜形成膜1貼於半導體晶圓7,並將治具用黏著劑層5貼於環狀架8上。 First, pull out the protective film forming composite sheet 3 in the form of a winding roll. As shown in FIG. 2, the protective film forming film 1 of the protective film forming composite sheet 3 is attached to the semiconductor wafer 7, and the jig is adhered The agent layer 5 is attached to the ring frame 8.

本實施形態之保護膜形成用複合片3中,藉由使基材41的背面的加熱前的算術平均粗度(Ra1)為0.2μm以上,而在前述拉出時不易發生黏合,可抑制拉出不良的發生及無法貼至工件之情形。 In the composite sheet 3 for forming a protective film of the present embodiment, by setting the arithmetic average roughness (Ra1) of the back surface of the base material 41 before heating to 0.2 μm or more, adhesion is not likely to occur during the aforementioned pulling out, and pulling can be suppressed. The occurrence of defects and the inability to attach to the workpiece.

之後將保護膜形成膜1硬化形成保護膜,而獲得積層構造體(以下稱為「積層構造體L」),前述積層構造體係在支持片4的黏著劑層42側的面上積層具有保護膜之半導體晶圓7,前述支持片4係具有作為可伸長切割片之功能。圖2所示之積層構造體L係進一步具有治具用黏著劑層5及環狀架8。保護膜形成膜1為熱硬化性接著劑時,可將保護膜形成膜1以特定溫度加熱適當時間。又,保護膜形成膜1非熱硬化性接著劑時,則進行另外的加熱處理。 After that, the protective film forming film 1 is cured to form a protective film to obtain a laminated structure (hereinafter referred to as "laminated structure L"). The aforementioned laminated structure system has a protective film laminated on the adhesive layer 42 side of the support sheet 4 For the semiconductor wafer 7, the aforementioned support sheet 4 has a function as an extensible dicing sheet. The laminated structure L shown in FIG. 2 further has an adhesive layer 5 for jigs and a ring frame 8. When the protective film forming film 1 is a thermosetting adhesive, the protective film forming film 1 can be heated at a specific temperature for an appropriate time. In addition, when the protective film forms the film 1 as a non-thermosetting adhesive, another heat treatment is performed.

前述的加熱溫度為50℃至200℃,較佳為90℃至150℃,加熱時間為0.1小時至10小時,較佳為1小時至3小時。本實施形態之保護膜形成用複合片3藉由此加熱處理而可使基材41的背面之算術平均粗度(Ra2)為0.25μm以下。 The aforementioned heating temperature is 50°C to 200°C, preferably 90°C to 150°C, and the heating time is 0.1 hour to 10 hours, preferably 1 hour to 3 hours. The composite sheet 3 for forming a protective film of the present embodiment can be heat-treated so that the arithmetic mean roughness (Ra2) of the back surface of the base material 41 can be 0.25 μm or less.

如前述方式而得到具備具有保護膜之半導體晶圓7之積層構造體L,之後視需要以穿透支持片4的方式對前述保護膜照射雷射光,而進行雷射印字。 The laminated structure L provided with the semiconductor wafer 7 having the protective film is obtained as described above, and then the protective film is irradiated with laser light to penetrate the support sheet 4 as necessary to perform laser printing.

接著對積層構造體L進行隱形雷射晶圓切割步驟。具體而言係將積層構造體L設置於分割加工用雷射照射裝置,找出保護膜1所覆蓋之半導體晶圓7的表面位置後,以穿透支持片4的方式對前述半導體晶圓7照射雷射光,而於半導體晶圓7內形成改質層。之後,藉由實施延伸步驟使具有作為切割片之功能之支持片4伸長,而對具有保護膜之半導體晶圓7施力(主面內方向之拉力)。結果貼於支持片4的具有保護膜之半導體晶圓7被分割,而得到具有保護膜的晶片(具有保護膜晶片)。之後使用取出裝置而由支持片4取出具有保護膜之晶片。 Next, a stealth laser wafer dicing step is performed on the laminated structure L. Specifically, the laminated structure L is set in a laser irradiation device for dividing and processing, and after finding the surface position of the semiconductor wafer 7 covered by the protective film 1, the semiconductor wafer 7 is penetrated through the support sheet 4. The laser light is irradiated to form a modified layer in the semiconductor wafer 7. After that, the support sheet 4 having the function as a dicing sheet is stretched by performing an extension step, and a force is applied to the semiconductor wafer 7 having a protective film (a pulling force in the direction of the main surface). As a result, the semiconductor wafer 7 with a protective film attached to the support sheet 4 is divided, and a wafer with a protective film (a wafer with a protective film) is obtained. Then, the wafer with the protective film is taken out from the support sheet 4 using the take-out device.

本實施形態之保護膜形成用複合片3中,藉由使基材41的背面的加熱後的算術平均粗度(Ra2)為0.25μm以下,而具有優異雷射光穿透性,因此於前述雷射印字步驟中可形成雷射印字性優異且視辨識性高的印字。又,於前述隱形雷射晶圓切割步驟中,藉由隱形雷射晶圓切割之工件分割性優異。 In the composite sheet 3 for forming a protective film of the present embodiment, the heated arithmetic average thickness (Ra2) of the back surface of the base material 41 is 0.25 μm or less, and thus has excellent laser light penetration. In the printing step, printing with excellent laser printing and high visibility can be formed. In addition, in the aforementioned invisible laser wafer dicing step, the work piece separation by the invisible laser wafer dicing is excellent.

7.保護膜形成用複合片之其他實施形態 7. Other embodiments of the composite sheet for forming a protective film

圖3為本發明其他實施形態之保護膜形成用複合片的剖面圖。如圖3所示,本實施形態之保護膜形成用複合片3A的構成具有:在積層於基材41其中一邊的面積層黏著劑層42所構成之支持片4、在支持片4的黏著劑層42側積層之保護膜形成膜1、以及在與保護膜形成膜1的支持片4相反側積層之剝離片6。本實施形態之保護膜形成膜1係以面方向與工件幾乎相同或稍大於工件的方式形成,且以面方向小於支持片4之方式形成。未積層保護膜形成膜1部分之黏著劑層42可貼於環狀架等治具。 Fig. 3 is a cross-sectional view of a composite sheet for forming a protective film according to another embodiment of the present invention. As shown in FIG. 3, the composition of the composite sheet 3A for forming a protective film of this embodiment has: a support sheet 4 composed of an adhesive layer 42 laminated on one side of a base material 41, and an adhesive on the support sheet 4 The protective film forming film 1 laminated on the side of the layer 42 and the release sheet 6 laminated on the side opposite to the supporting sheet 4 of the protective film forming film 1 are laminated. The protective film forming film 1 of this embodiment is formed so that the surface direction is almost the same as or slightly larger than the workpiece, and is formed so that the surface direction is smaller than the support sheet 4. The adhesive layer 42 of the portion where the protective film is not laminated to form the film 1 can be attached to a jig such as a ring frame.

本實施形態之保護膜形成用複合片3A之各構件材料及厚度等係與前述保護膜形成用複合片3之各構件材料及厚度相同。但黏著劑層42為由能量線硬化性黏著劑形成時,較佳為使黏著劑層42中與保護膜形成膜1接觸的部分之能量線硬化性黏著劑硬化,且不使其他部分之能量線硬化性黏著劑硬化。藉此可提高硬化保護膜形成膜1之保護膜之平滑性(光澤),並可維持對環狀架等治具的高接著力。 The material and thickness of each member of the composite sheet 3A for forming a protective film of this embodiment are the same as the material and thickness of each member of the composite sheet 3 for forming a protective film described above. However, when the adhesive layer 42 is formed of an energy-ray-curable adhesive, it is preferable to harden the energy-ray-curable adhesive in the part of the adhesive layer 42 that is in contact with the protective film forming film 1 without causing the energy of other parts to be hardened. The linear hardening adhesive hardens. Thereby, the smoothness (gloss) of the protective film of the hardened protective film forming film 1 can be improved, and high adhesion to jigs such as ring frames can be maintained.

又,在保護膜形成用複合片3A所具有之支持片4的黏著劑層42中與基材41相反側的邊緣部,可另外設置與前述保護膜形成用複合片3的治具用黏著劑層5相同之治具用黏著劑層。 In addition, in the adhesive layer 42 of the support sheet 4 of the protective film forming composite sheet 3A, the edge portion on the opposite side to the base material 41 may be provided with an adhesive for jigs that is the same as the aforementioned protective film forming composite sheet 3 Adhesive layer for jigs with the same layer 5.

又,本實施形態之支持片4可不具有黏著劑層42而(只)由基材41所構成。此時,基材41中保護膜形成膜1側的面為支持片4的第1面,基材41中與保護膜形成膜1側相反側的面為支持片4的第2面。 In addition, the support sheet 4 of this embodiment may not have the adhesive layer 42 but may be composed of the base material 41 (only). At this time, the surface of the substrate 41 on the side of the protective film forming film 1 is the first surface of the support sheet 4, and the surface of the substrate 41 on the side opposite to the side of the protective film forming film 1 is the second surface of the support sheet 4.

支持片4由基材41構成時,較佳為於保護膜形成膜1中基材41(支持片4)相反側的邊緣部設置如圖1所示之治具用黏著劑層5。 When the support sheet 4 is composed of the base material 41, it is preferable to provide an adhesive layer 5 for jigs as shown in FIG.

以上說明的實施形態係在於容易理解本發明,而非在於限定本發明。因此,前述實施形態中所揭示的各要素係包括本發明所屬技術範圍中所有的設計變更與均等物。 The embodiments described above are intended to facilitate the understanding of the present invention, and are not intended to limit the present invention. Therefore, each element disclosed in the foregoing embodiment includes all design changes and equivalents within the technical scope of the present invention.

例如支持片4中,基材41與黏著劑層42之間可存在其他層。又,可於由基材41所構成之支持片4的第1面積層其他層。 For example, in the support sheet 4, there may be other layers between the base material 41 and the adhesive layer 42. In addition, other layers may be layered on the first area of the support sheet 4 composed of the base material 41.

又,本發明之保護膜形成用複合片中,除了使基材41的背面的加熱前的算術平均粗度(Ra1)為0.51μm至0.65μm左右,以130℃加熱2小時後之算術平均粗度(Ra2)為0.08至0.22左右以外,藉由使基材41的130℃之儲藏彈性率為13MPa至20MPa左右,以即使加熱後的光線穿透率 在532nm為73%至91%左右、在1064nm為77%至91%左右,而可使耐黏合性、雷射印字性及切割分割性更為優異。 In addition, in the composite sheet for forming a protective film of the present invention, except that the arithmetic average roughness (Ra1) of the back surface of the base material 41 before heating is about 0.51 μm to 0.65 μm, the arithmetic average roughness after heating at 130°C for 2 hours In addition to the degree (Ra2) of about 0.08 to 0.22, the storage elasticity of the base material 41 at 130°C is about 13 MPa to 20 MPa, so that the light transmittance even after heating It is about 73% to 91% at 532nm, and about 77% to 91% at 1064nm, which can make it more excellent in adhesion resistance, laser printability, and cutting and splitting.

(實施例) (Example)

以下以實施例等具體說明本發明,但本發明之範圍不限定於該等實施例。 Hereinafter, the present invention will be specifically described with examples and the like, but the scope of the present invention is not limited to these examples.

[實施例1] [Example 1]

實施例1中,以如下方視製造如圖3、4所示之保護膜形成用複合片3。 In Example 1, the composite sheet 3 for forming a protective film as shown in FIGS. 3 and 4 was manufactured in the following view.

(1)製作含有保護膜形成膜之第1積層體 (1) Fabrication of the first laminate containing the protective film forming film

將以下各成分以下述摻配比(換算為固形分)混合,並以丁酮稀釋使固形分濃度成為61質量%,而調製保護膜形成膜用塗布劑。 The following components were mixed at the following blending ratio (converted as solid content), and diluted with methyl ethyl ketone so that the solid content concentration was 61% by mass, to prepare a coating agent for forming a protective film.

(A)黏結劑聚合物:將丙烯酸正丁酯10質量分、丙烯酸甲酯70質量分、甲基丙烯酸環氧丙酯5質量分、及丙烯酸2-羥乙酯15質量分共聚之(甲基)丙烯酸酯共聚物(重量平均分子量:80萬、玻璃轉化溫度:-1℃)100質量分。 (A) Binder polymer: a copolymer of 10 parts by mass of n-butyl acrylate, 70 parts by mass of methyl acrylate, 5 parts by mass of glycidyl methacrylate, and 15 parts by mass of 2-hydroxyethyl acrylate (methyl ) 100 mass minutes of acrylic ester copolymer (weight average molecular weight: 800,000, glass transition temperature: -1°C).

(B-1)雙酚A型環氧樹脂(三菱化學公司製jER828、環氧當量184g/eq至194g/eq)60質量分。 (B-1) Bisphenol A type epoxy resin (jER828 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 184 g/eq to 194 g/eq) 60 mass parts.

(B-2)雙酚A型環氧樹脂(三菱化學公司製jER1055、環氧當量800g/eq至900g/eq)10質量分。 (B-2) Bisphenol A type epoxy resin (jER1055 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 800 g/eq to 900 g/eq) 10 mass parts.

(B-3)二環戊二烯型環氧樹脂(DIC公司製EPICLON HP-7200HH,環氧當量255g/eq至260g/eq)30質量分。 (B-3) Dicyclopentadiene epoxy resin (EPICLON HP-7200HH manufactured by DIC Corporation, epoxy equivalent 255 g/eq to 260 g/eq) 30 mass parts.

(C)熱活性潛在性環氧樹脂硬化劑:二氰二胺(ADEKA公司製ADEKA HARDENER EH-3636AS、活性氫量21g/eq)2質量分。 (C) Thermally active latent epoxy resin hardener: dicyandiamine (ADEKA HARDENER EH-3636AS manufactured by ADEKA, active hydrogen amount 21 g/eq) 2 parts by mass.

(D)硬化促進劑:2-苯基-4,5-二羥甲基咪唑(四國化成工業公司製CUREZOL 2PHZ)2質量分。 (D) Hardening accelerator: 2-phenyl-4,5-dimethylolimidazole (CUREZOL 2PHZ manufactured by Shikoku Kasei Kogyo Co., Ltd.) 2 parts by mass.

(E)二氧化矽充填劑(Admatechs公司製SC2050MA、平均粒徑0.5μm)320質量分。 (E) 320 mass parts of silica filler (SC2050MA manufactured by Admatechs, average particle size 0.5 μm).

(F)著色劑:碳煙(三菱化學公司製#MA650、平均粒徑28nm)0.6質量分。 (F) Coloring agent: soot (#MA650 manufactured by Mitsubishi Chemical Corporation, average particle size 28 nm) 0.6 mass parts.

(G)矽烷耦合劑:γ-環氧丙氧基丙基三甲氧基矽烷氧(信越化學工業公司製KBM403、甲氧基當量:12.7mmol/g、分子量:236.3)0.4質量分。 (G) Silane coupling agent: γ-glycidoxypropyltrimethoxysilyloxy (KBM403 manufactured by Shin-Etsu Chemical Co., Ltd., methoxy equivalent: 12.7 mmol/g, molecular weight: 236.3) 0.4 mass parts.

首先於第1剝離片(琳得科公司製SP-PET3811、厚度38μm)的剝離面上,以使最後所得保護膜形成膜的厚度成為25μm之方式,以刀塗布器塗布前述保護膜形成膜用塗布劑,以120℃乾燥2分鐘而形成保護膜形成膜。之後將第2剝離片(琳得科公司製SP-PET381031、厚度38μm)的剝離面重疊於保護膜形成膜並使兩者貼合,獲得包括第1剝離片(圖3、4中之剝離片6)、保護膜形成膜(圖3、4中之保護膜形成膜1)、及第2剝離片構成之積層體。此積層體係為長條狀,並將其捲為輥狀而成為收捲物。 First, on the peeling surface of the first peeling sheet (SP-PET3811, made by Lindeke), the thickness of the protective film forming film obtained at the end is 25 μm, and the protective film forming film is coated with a knife coater. The coating agent was dried at 120°C for 2 minutes to form a protective film forming film. After that, the release surface of the second release sheet (SP-PET381031 made by Lindeke Co., Ltd.) was superimposed on the protective film to form a film, and the two were bonded together to obtain the first release sheet (the release sheet in Figures 3 and 4). 6) A laminate composed of a protective film forming film (protective film forming film 1 in Figs. 3 and 4) and a second release sheet. This laminated system is a long strip, and it is rolled into a roll to become a roll.

將前述得到的長條積層體的收捲物於幅方向裁切300mm(圖4中w1所示)。接著,對於前述積層體,以裁切第2剝離片及保護膜形成膜之方式,由第2剝離片側在前述積層體的寬方向中央部連續施以圓形(直徑d1:220mm;圖4中之符號101)的半切線。之後除去由半切線形成之圓形之外側所存在的第2剝離片及保護膜形成膜。藉此獲得第1積層體,前述第1積層體係在第1剝離片的剝離面上積層圓形的保護膜形成膜,並在前述圓形的保護膜形成膜上積層圓形的第2剝離片。 Long will the laminate obtained was cut in the winding direction 300mm width (w 1 shown in FIG. 4). Next, for the laminate, a second release sheet and a protective film were cut to form a film, and a circular shape (diameter d 1 : 220 mm; Fig. 4 The symbol 101) in the half tangent. Then, the second release sheet and the protective film forming film existing on the outer side of the circle formed by the half-cut line are removed. Thereby, a first laminate is obtained. The first laminate system laminates a circular protective film forming film on the release surface of the first release sheet, and laminates a circular second release sheet on the circular protective film forming film. .

(2)製作含有支持片之第2積層體 (2) Making the second laminate with supporting sheet

混合下述(H)及(I)成分,以丁酮稀釋使固形分濃度成為30質量%,而調製黏著劑層用塗布劑。 The following components (H) and (I) were mixed, diluted with methyl ethyl ketone so that the solid content concentration was 30% by mass, and the coating agent for the adhesive layer was prepared.

(H)黏著主劑:(甲基)丙烯酸酯共聚物(丁丙烯酸丁酯40質量分、丙烯酸2-乙基己酯55質量分、以及丙烯酸2-羥乙酯5質量分共聚所得之共聚物,重量平均分子量:60萬)100質量分。 (H) Adhesive main agent: (meth)acrylate copolymer (copolymer obtained by copolymerization of 40 mass parts of butyl acrylate, 55 mass parts of 2-ethylhexyl acrylate, and 5 mass parts of 2-hydroxyethyl acrylate , Weight average molecular weight: 600,000) 100 mass points.

(I)交聯劑:芳香族系聚異氰酸酯化合物(三井化學公司製TAKENATE D110N)10質量分。 (I) Crosslinking agent: Aromatic polyisocyanate compound (Takenate D110N manufactured by Mitsui Chemicals Co., Ltd.) for 10 parts by mass.

接著,以將一邊的面(基材的背面(支持片的第2面))的加熱前的算術平均粗度(Ra1)及加熱後(130℃、2小時)算術平均粗度(Ra2)、熔點、以及130℃之儲藏彈性率調整如下述表1所示之方式,而製作乙烯/丙烯共聚物膜,對前述膜的另一邊的面實施電暈處理,並以此作為基材。又,可藉由在基材的製膜時改變捲繞前述基材背面側之金屬輥表面的算術表面粗度,而調整前述加熱前的算術平均粗度(Ra1)。又,藉由調整構成基材之乙烯/丙烯共聚物之乙烯與丙烯之共聚比,而調整前述加熱後的算術平均粗度(Ra2)。 Next, the arithmetic average roughness (Ra1) of one side (the back surface of the substrate (the second surface of the support sheet)) before heating and the arithmetic average roughness (Ra2) after heating (130°C, 2 hours), The melting point and the storage modulus of 130°C were adjusted as shown in Table 1 below to produce an ethylene/propylene copolymer film, and corona treatment was applied to the other side of the film, and this was used as a base material. In addition, the arithmetic average roughness (Ra1) before heating can be adjusted by changing the arithmetic surface roughness of the surface of the metal roll wound on the back side of the substrate during film formation of the substrate. In addition, by adjusting the copolymerization ratio of ethylene and propylene of the ethylene/propylene copolymer constituting the base material, the arithmetic average roughness (Ra2) after heating is adjusted.

準備於厚度38μm的PET膜的一面形成矽酮系剝離劑層之剝離片(琳得科公司製SP-PET381031),於前述剝離片的剝離面上,以使最後所得保護膜形成膜的厚度成為10μm之方式,以刀塗布器塗布前述黏著劑層用塗布劑,乾燥並形成黏著劑層。之後將前述基材的電暈處理面重疊於黏著劑層並使兩者貼合,而獲得第2積層體,前述第2積層體係包括支持片(圖3、4之支持片4)與剝離片,前述支持片係包括基材(圖3之基材41)與黏著劑層(圖3之黏著劑層42)。前述積層體為長條狀,將其捲繞為收捲物後於幅方向裁切300mm(圖4中w1所示)。 Prepare a release sheet (SP-PET381031 made by Lindeco) on one side of a PET film with a thickness of 38μm. In a method of 10 μm, the aforementioned adhesive layer coating agent was applied with a knife coater, and dried to form an adhesive layer. After that, the corona-treated surface of the aforementioned base material is superimposed on the adhesive layer and the two are bonded together to obtain a second laminate. The aforementioned second laminate system includes a support sheet (support sheet 4 in Figures 3 and 4) and a release sheet The aforementioned supporting sheet includes a base material (base material 41 in FIG. 3) and an adhesive layer (adhesive agent layer 42 in FIG. 3). The laminate is elongated, which is wound after the winding direction of the web was cut 300mm (w 1 shown in FIG. 4).

(3)製作保護膜形成用複合片 (3) Making a composite sheet for forming a protective film

由前述(1)所得之第1積層體剝離圓形的第2剝離片,而露出圓形的保護膜形成膜。另一方面,由前述(2)所得之第2積層體剝離剝離片,而露出黏 著劑層。以使前述保護膜形成膜接觸前述黏著劑層之方式將第1積層體與第2積層體貼合,而獲得將由基材及黏著劑層所構成之支持片、保護膜形成膜、以及第1剝離片積層所成的第3積層體。 The circular second release sheet was peeled off from the first laminate obtained in (1) above, and the circular protective film was exposed to form a film. On the other hand, the second laminate obtained from the above (2) peeled off the release sheet, and exposed the adhesive 着剂层。 The agent layer. The first laminate and the second laminate are bonded so that the protective film forming film is in contact with the adhesive layer to obtain a support sheet composed of a base material and an adhesive layer, a protective film forming film, and a first release The third layered body formed by layered layers.

接著對於第3積層體,以由前述基材側裁切支持片(基材及黏著劑層)之方式施以半切線。具體而言係如圖4所示,形成比前述圓形的保護膜形成膜(直徑d1:220mm)還大之同心圓的圓形(直徑d2:270mm;圖4中之符號401;圓形的支持片),並於前述圓形外側形成具有20mm間隔(圖4中w2所示)之圓弧(圖4中之符號402)。又,於相鄰之兩圓形之間形成與第3積層體之寬方向端部平行的2條直線(圖4中之符號403),並在前述直線連結相鄰之前述圓弧。 Next, the third layered body is applied with half cuts by cutting the support sheet (the base material and the adhesive layer) from the aforementioned base material side. Specifically, the system shown in Figure 4, is formed over the protective film to form a film circular (diameter d 1: 220mm) of larger concentric circular (diameter d 2: 270mm; symbol 401 in the FIG. 4; round -Shaped supporting piece), and an arc (symbol 402 in FIG. 4) with an interval of 20 mm (shown by w 2 in FIG. 4) is formed on the outer side of the aforementioned circle. In addition, two straight lines (code 403 in FIG. 4) parallel to the widthwise ends of the third laminate are formed between two adjacent circles, and the adjacent arcs are connected to the straight lines.

之後除去前述圓形支持片與前述圓弧之間的部分、以及前述2條直線所挾部分,得到如圖3、4所示之保護膜形成用複合片。 Then, the part between the circular support sheet and the arc and the part sandwiched by the two straight lines are removed, and a composite sheet for forming a protective film as shown in FIGS. 3 and 4 is obtained.

[實施例2至實施例5及比較例1至比較例3] [Example 2 to Example 5 and Comparative Example 1 to Comparative Example 3]

除了使基材背面的加熱前的算術平均粗度(Ra1)及加熱後的算術平均粗度(Ra2)、熔點及130℃之儲藏彈性率變更為下述表1所示以外,以與實施例1相同之方式製造實施例2至實施例5及比較例1至比較例3之保護膜形成用複合片。 Except that the arithmetic average roughness before heating (Ra1) and the arithmetic average roughness after heating (Ra2), melting point, and storage elastic modulus at 130°C on the back surface of the base material were changed to those shown in Table 1 below, the same as in the examples 1. In the same manner, the composite sheets for forming protective films of Examples 2 to 5 and Comparative Examples 1 to 3 were produced.

[試驗例1]<測定基材之算術平均粗度> [Test Example 1] <Measure the arithmetic mean roughness of the base material>

使用接觸式表面粗度計(Mitutoyo公司製SURFTEST SV-3000),裁切值λc為0.8mm、評價長度Ln為4mm,根據JIS B0601:2001測定實施例及比較例使用之基材背面的加熱前的算術平均粗度(Ra1:μm)、及加熱後的算術平均粗度(Ra2:μm)。其結果示於下述表1。 Using a contact surface roughness meter (SURFTEST SV-3000 manufactured by Mitutoyo), the cut value λc is 0.8mm, the evaluation length Ln is 4mm, and the back surface of the substrate used in the examples and comparative examples is measured according to JIS B0601:2001 before heating The arithmetic average roughness (Ra1: μm) and the arithmetic average roughness after heating (Ra2: μm). The results are shown in Table 1 below.

於此,加熱後的算術平均粗度(Ra2)係在具有前述基材之實施例及比較例之保護膜形成用複合片固定於環狀架之狀態下,於烘箱內在 大氣環境下以130℃加熱2小時後,放置並測定冷卻至室溫後的值。於此加熱處理時,測定面(基材的背面)係不接觸烘箱內的內壁及底部。 Here, the arithmetic mean roughness (Ra2) after heating is in the state where the protective film forming composite sheet of the embodiment and the comparative example with the aforementioned base material is fixed on the ring frame, in the oven After heating at 130°C for 2 hours in an atmospheric environment, it was left to stand and the value after cooling to room temperature was measured. During this heat treatment, the measurement surface (the back surface of the substrate) does not touch the inner wall and bottom of the oven.

[試驗例2]<測定基材的熔點> [Test Example 2] <Measurement of the melting point of the base material>

使用差示掃描量熱計(TA Instruments公司製Q2000),根據JIS K7121(ISO3146)求出實施例及比較例所使用基材之熔解峰溫度。具體而言係將基材以每分鐘10℃之方式從23℃加熱至200℃,並描繪DSC曲線。由所得升溫時之DSC曲線求出熔解峰溫度(℃)。其結果示於下述表1。 Using a differential scanning calorimeter (Q2000 manufactured by TA Instruments), the melting peak temperature of the substrates used in the examples and comparative examples was determined in accordance with JIS K7121 (ISO3146). Specifically, the substrate is heated from 23°C to 200°C at 10°C per minute, and a DSC curve is drawn. The melting peak temperature (°C) was obtained from the obtained DSC curve at the time of heating. The results are shown in Table 1 below.

[試驗例3]<測定基材之儲藏彈性率> [Test Example 3] <Measure the storage elasticity of the base material>

以下述裝置及條件測定實施例及比較例所使用基材之130℃之儲藏彈性率。其結果示於下述表1。 The 130°C storage elastic modulus of the substrates used in the examples and comparative examples was measured with the following equipment and conditions. The results are shown in Table 1 below.

測定裝置:TA Instruments公司製動彈性率測定裝置「DMA Q800」。 Measuring device: TA Instruments' brake elastic modulus measuring device "DMA Q800".

試驗開始溫度:0℃。 Test start temperature: 0℃.

試驗結束溫度:200℃。 The end temperature of the test: 200℃.

升溫速度:3℃/分。 Heating rate: 3°C/min.

頻率數:11Hz。 Frequency: 11Hz.

振幅:20μm。 Amplitude: 20μm.

[試驗例4]<測定光線穿透率> [Test Example 4] <Measurement of light transmittance>

將實施例及比較例使用之基材如試驗例1所示般以130℃加熱2小時後,使用紫外可見光分光光度計(島津製作所公司製UV-3101PC、不使用積分球)測定前述加熱後基材之波長200nm至1200nm的光線穿透率,讀取波長532nm及1064nm的測定值。其結果示於下述表1。 The substrates used in the Examples and Comparative Examples were heated at 130°C for 2 hours as shown in Test Example 1, and then measured with an ultraviolet-visible spectrophotometer (UV-3101PC manufactured by Shimadzu Corporation, without integrating sphere). The light transmittance of the material with a wavelength of 200nm to 1200nm, read the measured values at wavelengths of 532nm and 1064nm. The results are shown in Table 1 below.

[試驗例5]<評價耐黏合性> [Test Example 5] <Evaluation of Adhesion Resistance>

由實施例及比較例所製造之保護膜形成用複合片剝離第1剝離片。使用貼黏裝置(琳得科公司製RAD-2700 F/12),將所得之保護膜形成用複合片 以輥對輥之方式,於70℃的環境下貼黏於矽晶圓(外徑:8吋、厚度:100μm)及環狀架(不鏽鋼製)。此時係連續進行10片的貼黏操作,並依下述基準評價耐黏合性。其結果示於下述表1。 The first release sheet was peeled from the composite sheet for forming a protective film produced in the Examples and Comparative Examples. Using an adhesive device (RAD-2700 F/12 made by Lindeco), the resulting protective film was formed into a composite sheet In a roll-to-roll method, the silicon wafer (outer diameter: 8 inches, thickness: 100μm) and ring frame (made of stainless steel) are pasted at 70°C. At this time, the sticking operation of 10 sheets was continuously performed, and the adhesion resistance was evaluated according to the following criteria. The results are shown in Table 1 below.

A:可無問題地貼黏(完全沒有發生黏合)。 A: It can be pasted without any problems (there is no bonding at all).

B:雖可貼黏,但基材與基材背面側之剝離片部分密接,於拉出保護膜形成用複合片時有部分剝離片由黏著劑層或保護膜形成膜剝離。 B: Although it can be pasted, the base material is partly in close contact with the release sheet on the back side of the base material, and when the protective film forming composite sheet is pulled out, part of the release sheet is peeled off by the adhesive layer or the protective film forming film.

C:有至少1片支持片轉黏至基材背面側之剝離片、或無法拉出保護膜形成用複合片等貼黏不良情形(有發生黏合)。 C: At least one support sheet is transferred to the release sheet on the back side of the base material, or the composite sheet for forming the protective film cannot be pulled out.

[試驗例6]<評價雷射印字性> [Test Example 6] <Evaluation of Laser Printability>

由實施例及比較例所製造之保護膜形成用複合片剝離第1剝離片。使用貼黏裝置(琳得科公司製RAD-2700 F/12)將所得之保護膜形成用複合片於70℃的環境下貼黏於矽晶圓(外徑:8吋、厚度:100μm)及環狀架(不鏽鋼製)。之後以130℃加熱處理2小時,使保護膜形成膜熱硬化而形成保護膜。 The first release sheet was peeled from the composite sheet for forming a protective film produced in the Examples and Comparative Examples. Using a bonding device (RAD-2700 F/12 made by Lindeco), the obtained composite sheet for forming a protective film was bonded to a silicon wafer (outer diameter: 8 inches, thickness: 100 μm) at 70°C and Ring frame (made of stainless steel). Then, it heat-processed at 130 degreeC for 2 hours, heat-hardened the protective film formation film, and formed the protective film.

接著使用印字裝置(KEYENCE公司製MD-T1000),穿透支持片而對保護膜照射波長532nm的雷射光,並以下述條件對保護膜進行雷射印字。 Next, a printing device (MD-T1000 manufactured by KEYENCE) was used to penetrate the support sheet to irradiate the protective film with laser light having a wavelength of 532 nm, and perform laser printing on the protective film under the following conditions.

條件1...文字大小:0.4mm×0.5mm、文字間隔:0.3mm、文字數:20文字 Condition 1: Character size: 0.4mm×0.5mm, character interval: 0.3mm, number of characters: 20 characters

條件2...文字大小:0.2mm×0.5mm、文字間隔:0.3mm、文字數:20文字 Condition 2: Character size: 0.2mm×0.5mm, character interval: 0.3mm, number of characters: 20 characters

依下述基準評價於保護膜所形成的雷射印字文字其透過支持片的辨識性(雷射印字性)。其結果示於下述表1。 The recognizability of the laser-printed characters formed on the protective film through the support sheet (laser-printability) was evaluated according to the following criteria. The results are shown in Table 1 below.

A:可順利閱讀條件1及2之全部文字。 A: You can read all the text of Conditions 1 and 2 smoothly.

B:條件2雖有不鮮明的部分,但可順利閱讀條件1之全部文字。 B: Although condition 2 has unclear parts, all the text of condition 1 can be read smoothly.

C:條件1及2皆有不鮮明的部分。 C: Both conditions 1 and 2 have unclear parts.

[試驗例7]<評價切割分割性> [Test Example 7] <Evaluation of Cutting and Dividability>

由實施例及比較例所製造之保護膜形成用複合片剝離第1剝離片。使用貼黏裝置(琳得科公司製RAD-2700 F/12)將所得之保護膜形成用複合片於70℃的環境下貼黏於矽晶圓(外徑:8吋、厚度:100μm)及環狀架(不鏽鋼製)。之後以130℃加熱處理2小時,將保護膜形成膜熱硬化而形成保護膜。 The first release sheet was peeled from the composite sheet for forming a protective film produced in the Examples and Comparative Examples. Use a bonding device (RAD-2700 F/12 manufactured by Lindeco) to bond the obtained composite sheet for forming a protective film to a silicon wafer (outer diameter: 8 inches, thickness: 100 μm) and Ring frame (made of stainless steel). Then, it heat-processed at 130 degreeC for 2 hours, and heat-hardened the protective film formation film, and formed the protective film.

接著對於所得之具有保護膜之矽晶圓,使用雷射切割器(DISCO公司製DFL7360)進行隱形雷射晶圓切割之分割加工,前述隱形雷射晶圓切割係包括下述步驟。 Next, for the obtained silicon wafer with protective film, a laser cutter (DFL7360 made by DISCO) is used to perform the dicing process of the invisible laser wafer dicing. The above-mentioned invisible laser wafer dicing system includes the following steps.

(步驟1)以使黏貼實施例及比較例之保護膜形成用複合片的矽晶圓及環狀架可由支持片側(基材背面側)照射雷射光之方式,設置雷射切割器的特定位置。 (Step 1) Set the specific position of the laser cutter so that the silicon wafer and the ring frame of the composite sheet for forming the protective film of the embodiment and the comparative example can be irradiated with laser light from the support sheet side (the back side of the base material) .

(步驟2)檢測保護膜所覆蓋之矽晶圓之表面位置後,設定雷射切割器之雷射光的焦點位置,以在具有保護膜之矽晶圓形成9mm×9mm的晶片體之方式,沿著裁切預定線,由保護膜側照射10次源自雷射切割器之波長1064nm之雷射光,於矽晶圓內形成改質層。 (Step 2) After detecting the surface position of the silicon wafer covered by the protective film, set the focus position of the laser light of the laser cutter to form a 9mm×9mm chip body on the silicon wafer with the protective film. Along the cutting line, 1064nm laser light from the laser cutter is irradiated from the side of the protective film 10 times to form a modified layer in the silicon wafer.

(步驟3)將貼黏有保護膜形成用複合片之矽晶圓及環狀架設置於晶片分割器(DISCO公司製DDS2300),以下拉速度100mm/秒、延伸量10mm進行延伸。 (Step 3) The silicon wafer with the protective film forming composite sheet and the ring frame are set on the chip divider (DDS2300 manufactured by DISCO), and the pull-down speed is 100mm/sec, and the extension is 10mm.

藉由以上步驟,將內部形成改質層之矽晶圓的至少一部分沿著分割預定線分割,得到複數具有保護膜之晶片。依據此時的分割率(=(實際分割所得之晶片數/預定分割之晶片數)×100)(%),以下述基準評價切割分割性。結果示於表1。 Through the above steps, at least a part of the silicon wafer in which the modified layer is formed is divided along the predetermined dividing line to obtain a plurality of chips with protective films. Based on the dividing rate at this time (=(the number of wafers actually divided/the number of chips to be divided)×100)(%), the dicing and dividing properties were evaluated based on the following criteria. The results are shown in Table 1.

A:晶片分割率100%(分割性優良)。 A: The wafer splitting rate is 100% (excellent splitting).

B:晶片分割率90%以上、未滿100%(具有可接受的分割性)。 B: The wafer split rate is 90% or more but less than 100% (with acceptable splitting).

C:晶片分割率80%以上、未滿90%(具有可接受的分割性)。 C: The wafer division rate is 80% or more but less than 90% (with acceptable division).

D:晶片分割率未滿80%(不具有可接受的分割性)。 D: The wafer splitting rate is less than 80% (not having acceptable splitting).

Figure 108127491-A0305-02-0037-1
Figure 108127491-A0305-02-0037-1

由表1可知,基材背面的加熱前的算術平均粗度(Ra1)為0.2μm以上、基材背面之130℃加熱2小時後之算術平均粗度(Ra2)為0.25μm以下之實施例之保護膜形成用複合片係耐黏合性優異,且雷射印字性及切割分割性亦優異。 It can be seen from Table 1 that the arithmetic average roughness (Ra1) of the back surface of the substrate before heating is 0.2μm or more, and the arithmetic average roughness (Ra2) of the back surface of the substrate is 0.25μm or less after heating at 130°C for 2 hours. The composite sheet for protective film formation is excellent in adhesion resistance, and also excellent in laser printing and cutting and dividing properties.

(產業可利用性) (Industrial availability)

本發明之保護膜形成用複合片係適用於包含以穿透基材方式照射雷射光之步驟的情形,如雷射印字及隱形雷射晶圓切割等。 The composite sheet for forming a protective film of the present invention is suitable for situations including a step of irradiating laser light through a substrate, such as laser printing and invisible laser wafer cutting.

1‧‧‧保護膜形成膜 1‧‧‧Protection film forming film

3‧‧‧保護膜形成用複合片 3‧‧‧Composite sheet for forming protective film

4‧‧‧支持片 4‧‧‧Support film

41‧‧‧基材 41‧‧‧Substrate

42‧‧‧黏著劑層 42‧‧‧Adhesive layer

5‧‧‧治具用黏著劑層 5‧‧‧Adhesive layer for fixture

6‧‧‧剝離片 6‧‧‧Peeling sheet

Claims (7)

一種保護膜形成用複合片,係具有支持片、以及積層於前述支持片的第1面側的保護膜形成膜;具有基材,係乙烯與丙烯之共聚物所構成的膜;前述支持片係包括前述基材及積層於前述基材的一邊的面側並為前述支持片的第1面側的黏著劑層;或是前述支持片係由基材所構成;前述支持片的第2面之算術平均粗度(Ra1)為0.2μm以上;將前述支持片以130℃加熱2小時後,前述支持片的第2面之算術平均粗度(Ra2)為0.25μm以下;前述基材在130℃的儲藏彈性率為1MPa至100MPa;前述支持片的第2面之前述加熱後的算術平均粗度(Ra2)小於前述算術平均粗度(Ra1)。 A composite sheet for forming a protective film, which has a support sheet and a protective film forming film laminated on the first surface side of the support sheet; a film composed of a copolymer of ethylene and propylene having a base material; the aforementioned support sheet It includes the substrate and an adhesive layer laminated on the side of one side of the substrate and is the first side of the support sheet; or the support sheet is composed of a substrate; the second surface of the support sheet The arithmetic mean roughness (Ra1) is 0.2μm or more; after heating the support sheet at 130°C for 2 hours, the arithmetic mean roughness (Ra2) of the second surface of the support sheet is 0.25μm or less; the substrate is at 130°C The storage elastic modulus of 1 MPa to 100 MPa; the arithmetic average roughness (Ra2) of the second surface of the support sheet after heating is less than the arithmetic average roughness (Ra1). 如請求項1所記載的保護膜形成用複合片,其中前述基材的熔點為90℃至180℃。 The composite sheet for forming a protective film according to claim 1, wherein the melting point of the base material is 90°C to 180°C. 如請求項1或2所記載的保護膜形成用複合片,其中前述基材在前述加熱後之波長1064nm的光線穿透率為40%以上。 The composite sheet for forming a protective film according to claim 1 or 2, wherein the substrate has a light transmittance of 40% or more at a wavelength of 1064 nm after the heating. 如請求項1或2所記載的保護膜形成用複合片,其中前述基材在前述加熱後之波長532nm的光線穿透率為40%以上。 The composite sheet for forming a protective film according to claim 1 or 2, wherein the light transmittance of the base material at a wavelength of 532 nm after the heating is 40% or more. 如請求項1或2所記載的保護膜形成用複合片,其中前述保護膜形成用複合片具有治具用黏著劑層,前述治具用黏著劑層係積層於前述保護膜形成膜中與前述支持片側為相反側的邊緣部。 The composite sheet for forming a protective film according to claim 1 or 2, wherein the composite sheet for forming a protective film has an adhesive layer for a jig, and the adhesive layer for a jig is laminated in the protective film forming film and The supporting sheet side is the edge portion on the opposite side. 如請求項1或2所記載的保護膜形成用複合片,其具有剝離片,前述剝離片係積層於前述保護膜形成膜。 The composite sheet for forming a protective film as described in claim 1 or 2, which has a release sheet, and the release sheet is laminated on the protective film forming film. 如請求項1或2所記載的保護膜形成用複合片,其中前述保護 膜形成膜係在半導體晶圓、或切割半導體晶圓所得的半導體晶片形成保護膜的層。 The composite sheet for forming a protective film as described in claim 1 or 2, wherein the aforementioned protective The film forming film is a layer that forms a protective film on a semiconductor wafer or a semiconductor wafer obtained by dicing a semiconductor wafer.
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