TWI747869B - Plates for semiconductor processing - Google Patents

Abstract

A semiconductor processing sheet 1 comprising at least a substrate 10, a semiconductor attachment layer 80, and a release film 30. The arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 ~0.8μm, the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 is set to α , and the second surface 802 of the semiconductor attachment layer 80 and the first surface 302 of the release film 30 When the peeling force of the interface of the surface 301 is set to β , the value of the ratio of α to β (α / β ) is 0 or more and less than 1.0, and the peeling force β is 10~1000mN/50mm. The plate 1 for semiconductor processing has excellent light transmittance and is not prone to adhesion.

Description

Plates for semiconductor processing

The invention relates to a plate for semiconductor processing.

When manufacturing semiconductor wafers from semiconductor wafers, semiconductor processing plates called dicing wafers, back grinding wafers, etc. are generally used. In recent years, such sheets for semiconductor processing have been required to have transmittance to light of a required wavelength (hereinafter referred to as "light transmittance").

For example, in recent years, the use of thinner silicon wafers and glass wafers has increased. These wafers are prone to chip defects such as edge chipping and chip cracking when dicing using a blade. Therefore, when using these wafers, after the dicing is completed, the wafer is attached to the semiconductor processing board, and the wafer is inspected from the surface of the wafer contacting the semiconductor processing board over the semiconductor processing board. shape. In order to perform this inspection well, it is necessary to transmit light to inspect the semiconductor processing plate.

In addition, when thin wafers are sliced into individual pieces, there are concerns about edge chipping if the blade is to be used for full dicing. Therefore, it is necessary to first cut the wafer into half and then perform back grinding. Slicing method: using laser light to set a modified layer inside the wafer, and then performing back grinding to separate the wafer into pieces, such as the Stealth dicing method.

During invisible cutting, by irradiating laser light inside the wafer When the modified layer is formed and attached to the semiconductor processing board, there is a risk of wafer breakage due to the pressure of the attachment. In order to avoid this risk, after the wafer is attached to the semiconductor processing plate in advance, laser light is irradiated to the wafer to form a modified layer over the semiconductor processing plate. At this time, in order to irradiate the laser light well, the semiconductor processing plate must transmit the laser light.

Moreover, when a chip is packaged with a flip chip, usually, the product surface, batch number, etc. are laser-printed on the back of the chip. In order to perform such laser printing, a step is provided to transport the wafer that has been ground on the back to the laser printing device. In recent years, the thinned wafers used have a higher risk of wafer cracks during handling. In order to avoid this risk, it is conceived to transport the thinned wafer while attaching it to the semiconductor processing sheet, and to irradiate the laser light across the semiconductor processing sheet to perform printing. In order to perform this laser printing well, the plate for semiconductor processing must transmit laser light.

In addition, when a protective film is provided on the back surface of the wafer, laser printing may be performed on the protective film. At this time, the protective film forming layer of the semiconductor processing sheet including the protective film forming layer is irradiated with laser light over the substrate and the adhesive layer of the semiconductor processing sheet to perform printing. At this time, in order to perform laser printing well, the base material and adhesive layer of the semiconductor processing sheet must transmit laser light.

Sheets for semiconductor processing usually have a substrate and an adhesive layer laminated on one side of the substrate. In addition, for the purpose of protecting the adhesive layer until the semiconductor processing sheet is used, a release film may be provided on the adhesive layer. For example, Patent Documents 1 and 2 describe a semiconductor processing board in which a substrate, an adhesive layer, and a release film are laminated in the following order piece. Also, generally, depending on the use of the semiconductor processing sheet, there are cases in which other layers such as an adhesive layer and a protective film forming layer are provided between the adhesive layer and the release film.

Prior art literature Patent literature

[Patent Document 1] Japan Shikaihei 8-1220

[Patent Document 2] Japanese Patent Publication No. 2-146144

The semiconductor processing sheet has excellent light transmittance to light with the required wavelength, which can be achieved by increasing the light transmittance of the base material and the adhesive layer respectively. For example, it can be achieved by improving the smoothness of the surface on the substrate side of the semiconductor processing sheet, that is, the surface on the opposite side of the adhesive layer of the substrate.

However, once the smoothness of the substrate side surface of the semiconductor processing sheet is increased in order to obtain a semiconductor processing sheet having high light transmittance, adhesion is likely to occur. That is, when the long semiconductor processing sheet is wound into a roll shape, the semiconductor processing sheet is likely to adhere to each other. Once such adhesion occurs, it becomes difficult to unwind the semiconductor processing sheet from the roll, or peeling occurs at an undesired interface (for example, the interface between the adhesive layer and the release film). In addition, in the semiconductor processing sheet after pre-cutting the substrate and the adhesive layer according to the shape of the wafer, once such adhesion occurs, when the semiconductor processing sheet is rolled out of the roll, the substrate will be generated. The laminate of the material and the adhesive layer is peeled off Film peeling, and the substrate side of the laminated body after the peeling is a defect such as sticking to the back surface of the peeling film.

Here, Patent Documents 1 and 2 disclose that embossing is performed on the surface of the release film on the opposite side of the adhesive layer. The purpose is to avoid the occurrence of embossing when winding the semiconductor processing sheet into a roll. Air is trapped between plates for semiconductor processing.

On the other hand, the semiconductor processing sheet disclosed in Patent Document 1 or 2 does not have high smoothness on the substrate side surface, and cannot be used for inspections and lasers through the semiconductor processing sheet as described above. Cutting, invisible cutting, laser printing, etc.

The present invention is made in view of the above-mentioned actual situation, and its purpose is to provide a semiconductor processing plate that has excellent light transmittance and is not prone to adhesion.

In order to achieve the above object, firstly, the present invention provides a semiconductor processing sheet, which is provided with at least the following semiconductor processing sheet: a substrate having a first surface and located on the opposite side of the aforementioned first surface The second surface; the semiconductor attachment layer, which is laminated on the second surface side of the substrate, has a first surface on the proximal side of the substrate, and has a second surface on the distal side of the substrate; And a release film, which is laminated on the second surface side of the semiconductor attachment layer, has a first surface on the proximal side of the semiconductor attachment layer, and has a second surface on the distal side of the semiconductor attachment layer; It is characterized in that the arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm, and the first surface of the substrate and the second surface of the release film are laminated and stored at 40°C for 3 days Thereafter, the peeling force at the interface between the first surface of the substrate and the second surface of the release film is set to α , and the second surface of the semiconductor attachment layer and the first surface of the release film are attached and placed on When the peeling force at the interface between the second surface of the semiconductor adhesive layer and the first surface of the release film after storage at 40°C for 3 days is set to β , the value of the ratio of α to β (α / β ) is 0 or more And less than 1.0, the aforementioned peeling force β is 10 to 1000 mN/50 mm (Invention 1).

According to the above invention (Invention 1), since the arithmetic average roughness Ra on the first surface of the substrate is 0.01~0.8μm, the smoothness of the surface on the substrate side becomes good and the substrate is resistant to light of the required wavelength Has high light transmittance. Moreover, since the ratio of the peeling force α to the peeling force β (α / β ) is 0 or more and less than 1.0, compared to the adhesiveness between the layers constituting the semiconductor processing sheet, it becomes a roll during winding. The adhesiveness between the semiconductor processing plates in the state after the physical shape does not become high, and it can exhibit excellent adhesion resistance. Thereby, while the unwinding can be performed well, the undesired interface does not peel off at the time of unwinding. In addition, since the peeling force β is 10 to 1000 mN/50mm, when a semiconductor processing sheet is used, the laminate including the base material and the semiconductor adhesive layer can be peeled from the peeling film with an appropriate peeling force.

In the above invention (Invention 1), the arithmetic average roughness Ra of the second surface of the release film is preferably 0.02 to 0.8 μm (Invention 2).

In the above inventions (Inventions 1 and 2), the release film system preferably includes a release agent layer on the first surface side and the second surface side thereof (Invention 3).

In the aforementioned inventions (Inventions 1 to 3), the aforementioned semiconductor attachment layer may also be an adhesive layer (Invention 4).

In the aforementioned inventions (Inventions 1 to 3), the aforementioned semiconductor attachment layer may also be an adhesive layer (Invention 5).

In the above inventions (Inventions 1 to 3), the aforementioned semiconductor attachment layer may be a protective film forming layer (Invention 6).

In the above inventions (Inventions 1 to 3), the semiconductor adhesive layer may be composed of an adhesive layer and an adhesive layer located between the adhesive layer and the release film (Invention 7).

In the above inventions (Inventions 1 to 3), the semiconductor attachment layer may be composed of an adhesive layer and a protective film forming layer located between the adhesive layer and the release film (Invention 8).

In the aforementioned inventions (Inventions 1 to 8), the aforementioned semiconductor processing sheet may be a strip of the aforementioned stripping film, which has a different shape from the aforementioned stripping film in a plan view and includes the aforementioned substrate and the aforementioned semiconductor paste. Attached layered body (Invention 9).

Secondly, the present invention provides a sheet for semiconductor processing, which has at least the following semiconductor processing sheet: a substrate having a first surface and a second surface located on the opposite side of the aforementioned first surface; A semiconductor adhesive layer which is laminated on the second surface side of the substrate, has a first surface on the proximal side of the substrate, and a second surface on the distal side of the substrate; adhesive for jigs A layer, which is laminated on the second surface side of the aforementioned semiconductor attachment layer, has a first surface on the proximal side of the semiconductor attachment layer, and has a second surface on the distal side of the semiconductor attachment layer; and The peeling film is laminated on at least the second surface side of the adhesive layer for jigs, has a first surface on the proximal side of the adhesive layer for jigs, and is far from the adhesive layer for jigs The end side has a second surface; it is characterized in that the arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm, and the first surface of the substrate and the second surface of the release film are laminated And after storage at 40°C for 3 days, the peeling force at the interface between the first surface of the substrate and the second surface of the release film is set to α , and the second surface of the adhesive layer for jigs and the release film When the peeling force at the interface between the second surface of the jig adhesive layer and the first surface of the peeling film after being attached to the first surface and stored at 40°C for 3 days is set to β , the ratio of α to β The value ( α / β ) is 0 or more and less than 1.0, and the aforementioned peeling force β is 10 to 1000 mN/50 mm (Invention 10).

According to the present invention, it is possible to provide a semiconductor processing board that has excellent light transmittance and is not prone to adhesion.

1, 1a, 1b, 1c, 1d, 1e, 2, 3‧‧‧Plates for semiconductor processing

10, 10a, 10b‧‧‧Substrate

101‧‧‧Side 1

102‧‧‧Side 2

20‧‧‧Adhesive layer

201‧‧‧Side 1

202‧‧‧Side 2

30‧‧‧Peeling film

301‧‧‧Side 1

302‧‧‧Side 2

40‧‧‧Adhesive layer

401‧‧‧Side 1

402‧‧‧Side 2

50‧‧‧Protection film forming layer

501‧‧‧Side 1

502‧‧‧Side 2

60‧‧‧Adhesive layer for fixture

601‧‧‧Side 1

602‧‧‧Side 2

80, 80a, 80b‧‧‧Semiconductor attachment layer

801‧‧‧Side 1

802‧‧‧Side 2

Fig. 1 is a cross-sectional view of the semiconductor processing sheet according to the first embodiment of the present invention.

Fig. 2 is a cross-sectional view showing the stacked state of the semiconductor processing plates according to the first embodiment of the present invention.

Fig. 3 is a cross-sectional view of the semiconductor processing plate of the first aspect of the first embodiment of the present invention.

Fig. 4 is a cross-sectional view of the semiconductor processing plate of the second aspect of the first embodiment of the present invention.

Fig. 5 is a cross-sectional view of the semiconductor processing plate of the third aspect of the first embodiment of the present invention.

Fig. 6 is a cross-sectional view of the semiconductor processing plate of the fourth aspect of the first embodiment of the present invention.

Figure 7 is the semiconductor processing of the fifth aspect of the first embodiment of the present invention Use the top view of the plate.

Fig. 8 is a cross-sectional view of the semiconductor processing sheet according to the second embodiment of the present invention.

Fig. 9 is a cross-sectional view of a semiconductor processing sheet according to a third embodiment of the present invention.

Figure 10 is a cross-sectional view of Figure 9 along the line A-A.

The form used to implement the invention

Hereinafter, embodiments of the present invention will be described.

Fig. 1 shows the semiconductor processing plate 1 of the first embodiment. The sheet 1 for semiconductor processing is constructed by laminating a substrate 10, a semiconductor attachment layer 80, and a release film 30 in the following order. The substrate 10 has a first surface 101 on the distal end side of the semiconductor attachment layer 80 and a second surface 102 on the proximal end side of the semiconductor attachment layer 80. The semiconductor attachment layer 80 has a first surface 801 on the proximal side of the base 10 and a second surface 802 on the proximal side of the release film 30. The release film 30 has a first surface 301 on the proximal side of the semiconductor attachment layer 80 and a second surface 302 on the distal side of the semiconductor attachment layer 80.

In the semiconductor processing sheet 1 of the present embodiment, the arithmetic mean roughness Ra on the first surface 101 of the base material 10 is 0.01 to 0.8 μm. Since the first surface 101 of the substrate 10 is so smooth, it is possible to reduce the scattering of light irradiated on the first surface 101 on this surface, and the substrate 10 can exhibit high light transmittance.

In addition, in the semiconductor processing sheet 1 of the present embodiment, the value (α / β ) of the ratio of the peeling force α to the peeling force β is 0 or more and less than 1.0. Here, the peeling force α is the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 as described later; the peeling force β is the semiconductor attachment layer 80 as described later The peeling force at the interface between the second surface 802 of the release film 30 and the first surface 301 of the release film 30. As a result, compared to the adhesion between the layers constituting the semiconductor processing sheet 1, the density between the semiconductor processing sheet 1 in the state where the semiconductor processing sheet 1 is wound into a roll shape Adhesiveness will not become higher, and excellent adhesion resistance can be exerted. Therefore, it is possible to perform good unwinding, and at the time of unwinding, no peeling occurs at an undesired interface.

In addition, in the semiconductor processing sheet 1 of the present embodiment, the peeling force β is 10 to 1000 mN/50 mm. Thereby, when the sheet for semiconductor processing is used, the peeling film can be peeled from the laminated body containing the base material and the semiconductor attachment layer by an appropriate peeling force.

1. Physical properties of plates for semiconductor processing, etc.

In the semiconductor processing sheet 1 of this embodiment, the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 is set as α , and the second surface of the semiconductor attachment layer 80 is When the peeling force of the interface between the surface 802 and the first surface 301 of the peeling film 30 is set to β , the value of the ratio of α to β (α / β ) is 0 or more, preferably 0.05 or more, and particularly preferably 0.1 or more. In addition, the value of this ratio ( α / β ) is less than 1.0, preferably 0.5 or less, and particularly preferably 0.2 or less. Here, the peeling force α means that the first side 101 of the substrate 10 and the second side 302 of the release film 30 are laminated and stored in a dry state at 40° C. for 3 days, and the release film 30 reacts to the substrate 10 The peeling force. In addition, the so-called peeling force β means that after the second surface 802 of the semiconductor adhesive layer 80 and the first surface 301 of the release film 30 are attached, the film 30 is released after being stored in a dry state at 40°C for 3 days. Peel force to the semiconductor attachment layer 80. In addition, when the value of the ratio ( α / β ) is 0, it means that when the value of the peeling force α becomes 0, the peeling force is so small that it cannot be measured, or the peeling film 30 has been removed from the substrate 10 before the measurement. The state of peeling. When the ratio of the peeling force α to the peeling force β (α / β ) is 0 or more and less than 1.0, as shown in Figure 2, when the semiconductor processing plates 1 are overlapped with each other, it is compared with the structure for semiconductor processing The adhesion between the various layers of the plate, and the adhesion between the plates 1 for semiconductor processing will not become high. Specifically, compared to the adhesion between the substrate 10 and the semiconductor adhesion layer 80, the adhesion between the semiconductor adhesion layer 80 and the release film 30, etc., the first surface 101 of the substrate 10 and The adhesion between the second surface 302 of the peeling film 30 facing it does not become high. As a result, excellent adhesion resistance can be exerted. When the semiconductor processing sheet 1 that has been rolled up and overlapped into a roll is unrolled, the first surface 101 of the substrate 10 of the semiconductor processing sheet 1 and The second surface 302 of the release film 30 of the semiconductor processing sheet 1 that overlaps it does not adhere to each other. In addition, it is possible to suppress the occurrence of peeling at an undesired interface of the sheet 1 for semiconductor processing at the time of unwinding. With the above, the sheet 1 for semiconductor processing can be rolled out satisfactorily.

In this specification, the peeling force β is defined as the peeling force at the interface between the peeling film 30 and the main layer in contact with it. For example, in the above-mentioned sheet 1 for semiconductor processing, since the peeling film 30 is in contact with the semiconductor attachment layer 80, the peeling force β at the interface between the semiconductor attachment layer 80 and the peeling film 30 is specified. On the other hand, in the second embodiment of the semiconductor processing sheet 2 (refer to FIG. 8) provided with the adhesive layer 60 for jigs described later, the semiconductor adhesive layer 80 and the adhesive layer 60 for jigs are contacted and peeled at the same time膜30。 Film 30. Here, compared to the contact between the release film 30 and the semiconductor attachment layer 80, the contact between the release film 30 and the adhesive layer 60 for jigs is related to the release force when the release film 30 is peeled from the semiconductor processing sheet 2 The impact is greater. Therefore, the semiconductor processing sheet 2 provided with the jig adhesive layer 60 is defined as the surface (the second surface 602) on the peeling film 30 side of the jig adhesive layer 60 and the peeling film as described later. 30 is the peeling force β at the interface of the surface (first surface 301) on the side of the adhesive layer 60 for jigs.

In the semiconductor processing sheet 1 of this embodiment, the peeling force β is 10 to 1000 mN/50 mm, preferably 10 to 500 mN/50 mm, and particularly preferably 30 to 200 mN/50 mm. When the peeling force β is less than 10mN/50mm, when the semiconductor processing sheet 1 is unrolled from the roll, and at other unintentional stages, the laminate of the substrate 10 and the semiconductor adhesion layer 80 is easily peeled from the film 30 peeled off. In addition, when the peeling force β is greater than 1000 mN/50 mm, when the semiconductor processing sheet 1 is used, it becomes difficult to peel the laminate of the substrate 10 and the semiconductor adhesion layer 80 from the peeling film 30 and the workability deteriorates. In particular, when the laminated body is successively bonded to a semiconductor wafer using a wafer mounter, defects such as the laminated body cannot be well peeled from the release film 30 and cannot be bonded are caused.

The thickness of the semiconductor processing sheet 1 of the present embodiment is not limited as long as it can have an appropriate function in the step of using the semiconductor processing sheet 1. The thickness is usually 50~300μm, especially 50~250μm, more preferably 50~230μm. In addition, the thickness of the sheet 1 for semiconductor processing in this specification means the thickness after removing the peeling film 30 peeled before use of the sheet 1 for semiconductor processing.

2. Substrate

In the semiconductor processing sheet 1 of the present embodiment, the arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 to 0.8 μm, particularly preferably 0.02 to 0.5 μm, and more preferably 0.03 to 0.3 μm . If the arithmetic average roughness Ra is less than 0.01μm, the first surface 101 becomes excessively smooth and the value of the peeling force α becomes too large. When the semiconductor processing plate 1 is wound into a roll shape, it is easy to cause adhesion. It is not easy to satisfy the above-mentioned relationship between the peeling force α and the peeling force β. In addition, if the arithmetic average roughness Ra is greater than 0.8 μm, the light beam irradiating the first surface 101 is likely to be scattered on this surface, thereby impairing light transmittance. In addition, the arithmetic average roughness Ra in this specification is measured in accordance with JIS B0601:2013, and the details of the measurement method are as disclosed in the examples described later.

In order to achieve the above-mentioned arithmetic average roughness Ra, it is preferable to manufacture the base material 10 to have the above-mentioned arithmetic average roughness Ra. For example, it is preferable to manufacture the substrate 10 having the above-mentioned arithmetic average roughness Ra by adjusting the surface roughness of the roller used in the extrusion molding of the substrate 10. Or, when the base material 10 is manufactured by the blow molding method, it is preferable to adjust the surface roughness of the first surface 101 so that the arithmetic average roughness Ra is described above.

The arithmetic average roughness Ra on the second surface 102 of the substrate 10 can be appropriately set as long as the light transmittance of the substrate 10 can be ensured. Preferably, 0.05~1.0μm is more preferable.

In the semiconductor processing sheet 1 of the present embodiment, the constituent material of the base material 10 is as long as it exhibits excellent light transmittance to light of the required wavelength and can be used in the use step of the semiconductor processing sheet 1 The function is not particularly limited. The base material 10 may be a film (resin film) containing a resin-based material as a main material. It is preferable that the substrate 10 is composed of only a resin film. Specific examples of resin films include ethylene-vinyl acetate copolymer films; ethylene-(meth)acrylic acid copolymer films, ethylene-(meth)acrylic acid copolymer films, and ethylene-(meth)acrylic acid copolymer films. Ethylene copolymer films such as methyl acrylate copolymer films and other ethylene-(meth)acrylate copolymer films; polyethylene films, polypropylene films, polybutene films, polybutadiene films, poly Polyolefin-based films such as methylpentene film, ethylene-norbornene copolymer film, norbornene resin film; polyvinyl chloride-based films such as polyvinyl chloride film and vinyl chloride copolymer film; polyterephthalic acid Polyester films such as ethylene glycol film, polybutylene terephthalate film, polyethylene naphthalate, etc.; (meth)acrylate copolymer film; polyurethane film; polyimide film; polyphenylene Vinyl film; polycarbonate film; fluororesin film, etc. Examples of polyethylene films include low-density polyethylene (LDPE) films, linear low-density polyethylene (LLDPE) films, high-density polyethylene (HDPE) films, and the like. In addition, modified films such as the above-mentioned cross-linked films and ionic polymer films can also be used. The substrate 10 may be a film composed of one of the above-mentioned types, or may be a film composed of a combination of two or more of the above-mentioned types. Furthermore, it may be a layered film of a multilayer structure formed by laminating a plurality of layers composed of one or more of the above-mentioned materials. In this laminated film, the materials constituting each layer can be the same or different. As the substrate 10, among the above-mentioned films, it is preferable to use an ethylene-vinyl acetate copolymer film, an ethylene-methyl methacrylate copolymer film, a polyvinyl chloride film, or a polypropylene film. In addition, "(meth)acrylic acid" in this specification means both acrylic acid and methacrylic acid. The same applies to other similar terms.

In the substrate 10, as long as it does not damage the excellent light transmittance of light of the required wavelength, flame retardants, plasticizers, antistatic agents, slip agents, antioxidants, colorants, and infrared absorbing agents may also be contained in the above-mentioned film. Various additives such as chemical agents, ultraviolet absorbers, ion scavengers, etc. The content of these additives is not particularly limited, but it can be used as the base material 10 to exhibit excellent The light transmittance and the range of required functions are better.

In addition, as described later, the adhesive layer 20 can also be used as the semiconductor attachment layer 80. When energy rays are used to harden the adhesive layer 20, the base material 10 preferably has light transmittance to the energy rays. For example, as an example of this energy beam, ultraviolet rays, electron beams, etc. can be cited.

The second surface 102 of the substrate 10 can be subjected to surface treatments such as primer treatment, corona treatment, plasma treatment, etc., as long as it does not impair the light transmittance of the semiconductor processing plate 1 to improve the adhesion to the semiconductor. The adhesion of the attached layer 80.

The thickness of the substrate 10 is not limited as long as the step used in the semiconductor processing sheet 1 can have an appropriate function. The thickness is usually 20~450μm, 25~300μm is particularly preferred, and 50~200μm is more preferred.

3. Peel the film

The arithmetic average roughness Ra of the second surface 302 of the release film 30 is preferably 0.02 to 0.8 μm, particularly preferably 0.03 to 0.5 μm, and more preferably 0.05 to 0.3 μm. Since the arithmetic average roughness Ra of the second surface 302 is 0.02 to 0.8 μm, the second surface 302 has an appropriate roughness and the value of the peeling force α does not become too large. Thereby, it is easy to satisfy the above-mentioned relationship between the peeling force α and the peeling force β. In addition, since the arithmetic average roughness Ra of the second surface 302 is 0.02 μm or more, when the semiconductor processing sheet 1 is wound into a roll shape, the second surface 302 of the release film 30 is not easily adhered to the smooth As a result, the first surface 101 of the base 10 can effectively prevent the occurrence of adhesion. Furthermore, since the arithmetic average roughness Ra of the second surface 302 is 0.8 μm or less, when the semiconductor processing sheet 1 is wound into a roll shape, even if the surface shape transfer of the second surface 302 of the release film 30 occurs It is also possible to prevent the smoothness of the first surface 101 from being reduced to the first surface 101 of the base material 10.

In order to achieve the above-mentioned arithmetic average roughness Ra, when the release film 30 is manufactured, it may be manufactured to have the above-mentioned arithmetic average roughness Ra. Alternatively, after the constituent material of the release film 30 is manufactured into a sheet shape, the sheet is subjected to a surface treatment so as to have the aforementioned arithmetic average roughness Ra. In the former case, for example, by adjusting the roughness of the roll used in the extrusion forming of the release film 30, the release film 30 having the above-mentioned arithmetic average roughness Ra can be manufactured. In the latter case, the release film 30 having the above-mentioned arithmetic average roughness Ra can be manufactured by, for example, performing sandblasting, embossing, or the like on the plate.

The arithmetic average roughness Ra on the first surface 301 of the release film 30 can be appropriately set as long as the relationship between the release force α and the release force β is achieved, and the release force β is the above value, for example 0.02~0.10μm is preferred, 0.02~0.07μm is particularly preferred, and 0.03~0.05μm is more preferred.

The release film 30 is usually capable of providing a release agent layer on the 301 side of the first surface in order to exhibit releasability to the semiconductor attachment layer 80. In addition, the release film 30 of the semiconductor processing sheet of the present embodiment may be provided with a release agent layer on the first surface 301 side and the second surface 302 side, respectively. At this time, the release film 30 has a configuration in which a release agent layer is provided on both sides of a substrate such as a resin film. By providing a release agent layer on the 301 side of the first surface, the release force β can easily achieve the above-mentioned value. In addition, by providing a release agent layer on the 302 side of the second surface, the above-mentioned relationship between the release force α and the release force β is easily achieved. As the release agent, a silicone-based release agent, an alkyd-based release agent, a fluorine-based release agent, a long-chain alkyl-based release agent, a rubber-based release agent, etc. can be used. Among these, from the viewpoint of easily adjusting the peeling force β to the above-mentioned value, it is better to use a silicone-based release agent on the first surface 301 side, and it is easy to adjust the ratio of the peeling force α to the peeling force β ( From the viewpoint of adjusting α / β )) to be the above-mentioned value, it is preferable to use a silicone-based release agent or an alkyd-based release agent on the second surface 302 side.

As a material constituting the release film 30, for example, a resin film can be used. Specific examples of resin films include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; and polyamides such as polypropylene and polyethylene. Olefin film.

The thickness of the release film 30 is not particularly limited, but is usually about 12 to 250 μm.

4. Semiconductor attachment layer

The semiconductor attachment layer 80 refers to a layer attached to a semiconductor wafer or the like or a layer attached to a semiconductor wafer or the like when the sheet 1 for semiconductor processing of the present embodiment is used. The attaching at this time may be attaching temporarily when the sheet 1 for semiconductor processing is used, or may be continued attaching after the sheet 1 for semiconductor processing is used. As a preferable example of the semiconductor adhesive layer 80, a laminate composed of an adhesive layer 20, an adhesive layer 40, a protective film forming layer 50, an adhesive layer 20 and an adhesive layer 40, and an adhesive A layered body composed of the layer 20 and the protective film forming layer 50 and the like.

Fig. 3 shows a first aspect of the semiconductor processing sheet 1 of the first embodiment. In this aspect of the semiconductor processing board 1 a, the semiconductor attachment layer 80 is the adhesive layer 20. In the semiconductor processing sheet 1a, the adhesive layer 20 has a first surface 201 on the proximal side of the substrate 10, and on the proximal end of the release film 30 The side has a second surface 202. Moreover, the sheet 1a system for semiconductor processing can be used as a dicing sheet, for example.

Fig. 4 shows a second aspect of the semiconductor processing sheet 1 of the first embodiment. In this aspect of the semiconductor processing sheet 1 b, the semiconductor attachment layer 80 is the adhesive layer 40. In the semiconductor processing sheet 1 b, the adhesive layer 40 has a first surface 401 on the proximal end side of the base 10 and a second surface 402 on the proximal end side of the release film 30. Moreover, the sheet 1b system for semiconductor processing can be used as a wafer bonding sheet, for example.

Fig. 5 shows a third aspect of the semiconductor processing plate of the first embodiment. In this aspect of the semiconductor processing sheet 1c, the semiconductor attachment layer 80 is the protective film forming layer 50. In the semiconductor processing sheet 1c, the protective film forming layer 50 has a first surface 501 on the proximal side of the base material 10 and a second surface 502 on the proximal side of the release film 30. In addition, the sheet 1c for semiconductor processing can be used as a sheet for forming a protective film, for example.

Fig. 6 shows a fourth aspect of the semiconductor processing sheet 1 of the first embodiment. In the semiconductor processing board 1 d of this aspect, the semiconductor attachment layer 80 is a laminate composed of the adhesive layer 20 and the adhesive layer 40. In the semiconductor processing sheet 1d, the adhesive layer 20 is located on the proximal side of the base material 10, and the adhesive layer 40 is located on the proximal side of the release film 30. In addition, the adhesive layer 20 has a first surface 201 on the proximal end side of the base 10 and a second surface 202 on the proximal end side of the release film 30. Furthermore, the adhesive layer 40 has a first surface 401 on the proximal side of the base 10 and a second surface 402 on the proximal side of the release film 30. In addition, the semiconductor processing sheet 1d system can be used as a dicing, for example. The wafer joins the plates.

Fig. 7 shows a fifth aspect of the semiconductor processing sheet 1 of the first embodiment. In this aspect of the semiconductor processing sheet 1e, the semiconductor attachment layer 80 is a laminate composed of the adhesive layer 20 and the protective film forming layer 50. In the semiconductor processing sheet 1e, the adhesive layer 20 is located on the proximal side of the base material 10, and the protective film forming layer 50 is located on the proximal side of the release film 30. In addition, the adhesive layer 20 has a first surface 201 on the proximal end side of the base 10 and a second surface 202 on the proximal end side of the release film 30. Furthermore, the protective film forming layer 50 has a first surface 501 on the proximal side of the base 10 and a second surface 502 on the proximal side of the release film 30. In addition, the semiconductor processing sheet 1e can be used for semiconductor wafer dicing, and after dicing, the protective film forming layer 50 can be heated or the like to form a protective film on the semiconductor wafer. In addition, the sheet 1e for semiconductor processing can also be used as a sheet for forming a protective film.

(1) Adhesive layer

In the semiconductor processing sheet 1 of this embodiment, the adhesive layer 20 may be composed of a non-energy-ray-curable adhesive (consisting of a polymer that does not have energy-beam-curable properties), or may be composed of an energy-beam-curable adhesive. As a non-energy-ray-curable adhesive, it is better to have the necessary adhesion and releasability. For example, acrylic adhesives, rubber-based adhesives, silicone-based adhesives, and urethane-based adhesives can be used. Adhesives, polyester adhesives, polyvinyl ether adhesives, etc. Among these, acrylic adhesives that can effectively suppress the peeling of semiconductor wafers, semiconductor wafers, etc. in the dicing step or the like are preferable.

On the other hand, because the energy-ray curable adhesive reduces the adhesive force by irradiating energy rays, when it is desired to separate semiconductor wafers, semiconductor wafers, etc. from the semiconductor processing plate 1, it can be irradiated with energy rays. easily Make it separate.

The energy-ray-curable adhesive constituting the adhesive layer 20 can be made of a polymer with energy-ray-curable properties as the main component, or a non-energy-ray-curable polymer (polymers that do not have energy-ray-curable properties). The main component is a mixture of monomers and/or oligomers having at least one energy-ray curable group. In addition, it may be a mixture of a polymer having energy ray curability and a non-energy ray curable polymer, or it may be a polymer having energy ray curability and a monomer having at least one energy ray curable group. /Or the mixture of oligomers may also be a mixture of the above three types.

First, the following describes the case where the energy ray curable adhesive is mainly composed of a polymer having energy ray curability.

Energy-ray curable polymer is a (meth)acrylate (co)polymer (A) (hereinafter referred to as "Energy ray hardening polymer (A)") is preferred. This energy-ray curable polymer (A) is composed of an acrylic copolymer (a1) having a functional group-containing monomer unit and an unsaturated group-containing compound having a functional group bonded to the functional group ( a2) The one obtained by reaction is better.

The acrylic copolymer (a1) is composed of a structural unit introduced from a functional group-containing monomer and a structural unit introduced from a (meth)acrylate monomer or a derivative thereof.

The functional group-containing monomer as the structural unit of the acrylic copolymer (a1) is a monomer having a polymerizable double bond in the molecule, and a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group. Body is good.

Examples of hydroxyl-containing monomers include (meth)acrylic acid 2-hydroxy Ethyl, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, (methyl) ) 4-Hydroxybutyl acrylate, etc. These can be used individually or in combination of 2 or more types.

Examples of carboxyl group-containing monomers include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These can be used individually or in combination of 2 or more types.

Examples of the amine group-containing monomer or the substituted amine group-containing monomer include aminoethyl (meth)acrylate, n-butylaminoethyl (meth)acrylate, and the like. These can be used individually or in combination of 2 or more types.

As the (meth)acrylate monomers constituting the acrylic copolymer (a1), alkyl (meth)acrylates, cycloalkyl (meth)acrylates, (meth) Base) benzyl acrylate. Among these, particularly preferred are alkyl (meth)acrylates with an alkyl group of 1 to 18 carbon atoms. For example, methyl (meth)acrylate, ethyl (meth)acrylate, and propylene (meth)acrylate can be used. Ester, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc.

The acrylic copolymer (a1) usually contains the structural unit introduced from the above-mentioned functional group-containing monomer at a ratio of 3-100% by mass, preferably 5-40% by mass, and usually 0-97% by mass, preferably It contains a structural unit introduced from a (meth)acrylate monomer or its derivative at a ratio of 60 to 95% by mass.

The acrylic copolymer (a1) can be obtained by copolymerizing the above-mentioned functional group-containing monomers with (meth)acrylate monomers or their derivatives using common methods. In addition to these monomers, It can copolymerize dimethyl acrylamide, vinyl formate, vinyl acetate, styrene, etc.

By reacting the acrylic copolymer (a1) having the above-mentioned functional group-containing monomer unit with the unsaturated group-containing compound (a2) having the functional group bonded to the functional group, energy ray curing can be obtained Type polymer (A).

The functional group contained in the unsaturated group-containing compound (a2) can be appropriately selected according to the functional group type of the functional group-containing monomer unit contained in the acrylic copolymer (a1). For example, when the functional group of the acrylic copolymer (a1) is a hydroxyl group, an amino group or a substituted amino group, the functional group of the unsaturated group-containing compound (a2) is preferably an isocyanate group or an epoxy group ; When the functional group of the acrylic copolymer (a1) is an epoxy group, the functional group of the unsaturated group-containing compound (a2) is preferably an amino group, a carboxyl group or an acrylcyclopropyl group.

唑啉、2-異丙烯基-2-

唑啉等。 In addition, the aforementioned unsaturated group-containing compound (a2) has at least one energy-ray polymerizable carbon-carbon double bond in one molecule, preferably 1 to 6, and more preferably 1 to 4. As specific examples of such an unsaturated group-containing compound (a2), for example, 2-methacryloxyethyl isocyanate, m-isopropenyl- α , α -dimethylbenzyl isocyanate, methyl Acrylic isocyanate methacrylate, allyl isocyanate, 1,1-(bisacryloxymethyl) ethyl isocyanate; diisocyanate compound or polyisocyanate compound, and (meth)acrylic hydroxyl group Acrylic monoisocyanate compound obtained by reacting ethyl ester; Acrylic monoisocyanate compound obtained by reacting diisocyanate compound or polyisocyanate compound with polyol compound and hydroxyethyl (meth)acrylate; (methyl) Glycidyl acrylate; (meth)acrylic acid, (meth)acrylic acid 2-(1-acrylcyclopropyl)ethyl, 2-vinyl-2-

Oxazoline, 2-isopropenyl-2-

Oxazoline and so on.

The above-mentioned unsaturated group-containing compound (a2) is based on the functional group-containing monomer of the above-mentioned acrylic copolymer (a1), and is usually 5 to 95 mol%, preferably Use at a rate of 10 to 95 mole%.

The reaction between the acrylic copolymer (a1) and the unsaturated group-containing compound (a2) can be based on the functional group of the acrylic copolymer (a1) and the function of the unsaturated group-containing compound (a2) The reaction temperature, pressure, solvent, time, presence or absence of catalyst, and the type of catalyst are appropriately selected. Thereby, the functional group present in the acrylic copolymer (a1) reacts with the functional group in the unsaturated group-containing compound (a2) to introduce the unsaturated group into the side chain of the acrylic copolymer (a1) And it is possible to obtain an energy ray hardening polymer (A).

The weight average molecular weight of the energy ray hardening polymer (A) obtained in this way is preferably 10,000 or more, particularly preferably 150,000 to 1,500,000, and more preferably 200,000 to 1,000,000. In addition, the weight average molecular weight (Mw) in this specification is a value in terms of standard polystyrene measured by gel permeation chromatography (GPC method).

The energy-ray-curable adhesive is based on the energy-ray-curable polymer (A), which has an energy-ray-curable polymer as the main component. The energy-ray-curable adhesive may further contain an energy-ray-curable monomer. Bodies and/or oligomers (B).

As the energy-ray curable monomer and/or oligomer (B), for example, an ester of a polyol and (meth)acrylic acid can be used.

Examples of such energy-ray curable monomers and/or oligomers (B) include monofunctional acrylates such as cyclohexyl (meth)acrylate and isobornyl (meth)acrylate. Trimethylolpropane tri(meth)acrylate, neopentaerythritol tri(meth)acrylate, neopentaerythritol tri(meth)acrylate, dineopentaerythritol hexa(meth)acrylate, 1,4-Butanediol di(meth)acrylate, 1,6-hexanedi Polyfunctional acrylates such as alcohol di(meth)acrylate, polyethylene glycol di(meth)acrylate, dimethylol tricyclodecane di(meth)acrylate, etc., polyester oligomer ( Meth) acrylate, polyurethane oligo(meth)acrylate, etc.

When energy-ray-curable polymer (A) is blended with energy-ray-curable monomer and/or oligomer (B), the energy-ray-curable monomer and/or oligomer in the energy-ray-curable adhesive The content of the substance (B) is preferably 10-40 parts by mass, particularly preferably 30-350 parts by mass relative to 100 parts by mass of the energy ray hardening polymer (A).

Here, when using ultraviolet rays as the energy ray used to obtain the energy ray curable adhesive, it is better to add a photopolymerization initiator (C). By using this photopolymerization initiator (C), polymerization can be reduced. Hardening time and light exposure.

As the photopolymerization initiator (C), specifically, benzoin, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin Inin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone (2-4-diethylthioxanthone), 1-hydroxycyclohexyl Phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, bibenzyl, biacetyl, β -chloroanthraquinone, (2,4, 6-Trimethylbenzyldiphenyl)phosphine oxide, 2-benzothiazole-N,N-diethyldithiocarbamate, oligo {2-hydroxy-2-methyl-1-[4 -(1-propenyl)phenyl]acetone}, 2,2-dimethoxy-1,2-diphenylethane-1-one, etc. These can be used individually or in combination of 2 or more types.

The photopolymerization initiator (C) is relative to the energy-ray-curable copolymer (A) (when an energy-ray-curable monomer and/or oligomer (B) is formulated, it is relative to the energy-ray-curable copolymer (A) and energy-ray hardenable monomers and/or oligomers (B) The total amount is 100 parts by mass) 100 parts by mass, 0.1-10 parts by mass, especially in the range of 0.5-6 parts by mass.

In the energy-ray curable adhesive, in addition to the above-mentioned components, other components may be appropriately blended. As other components, for example, a non-energy-ray curable polymer component or an oligomer component (D), a crosslinking agent (E), etc. can be mentioned.

Examples of the non-energy-ray curable polymer component or oligomer component (D) include polyacrylate, polyester, polyurethane, polycarbonate, polyolefin, etc., and the weight average molecular weight (Mw) is 3,000-2,500,000 The polymer or oligomer is better. By blending this component (D) in the energy-ray curable adhesive, the adhesiveness and peelability before curing, the strength after curing, the adhesion to other layers, the storage stability, etc. can be improved. The compounding amount of this component (D) is not specifically limited.

唑啉化合物、金屬烷氧化物化合物、金屬鉗合物化合物、金屬鹽、銨鹽、反應性酚樹脂等。藉由在能量線硬化性黏著劑調配此成分(E)，能夠改善在硬化前之黏著性及剝離性、黏著劑的凝聚性等。此成分(E)的調配量係沒有特別限定，相對於能量線硬化型共聚物(A)100質量份，能夠在0~15質量份的範圍適當地決定。 As the crosslinking agent (E), a polyfunctional compound having reactivity with the functional group possessed by the energy ray curable copolymer (A) or the like can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, acrylcyclopropane compounds, hydrazine compounds, aldehyde compounds,

Oxazoline compounds, metal alkoxide compounds, metal clamp compounds, metal salts, ammonium salts, reactive phenol resins, etc. By blending this component (E) with the energy-ray curable adhesive, the adhesiveness and peelability before curing, the cohesiveness of the adhesive, etc. can be improved. The blending amount of this component (E) is not particularly limited, and it can be appropriately determined in the range of 0 to 15 parts by mass relative to 100 parts by mass of the energy ray curable copolymer (A).

Secondly, for energy-ray-curable adhesives, a combination of a non-energy-ray-curable polymer component and at least one energy-ray-curable group The case where the mixture of the oligomer and/or the oligomer is used as the main component will be described below.

As the non-energy-ray curable polymer component, for example, the same component as the aforementioned acrylic copolymer (a1) can be used.

As the monomer and/or oligomer having at least one energy ray curable group, the same as the aforementioned component (B) can be selected. The blending ratio of the non-energy-ray-curable polymer component and the monomer and/or oligomer having at least one energy-ray-curable group is 1 less than 100 parts by mass of the non-energy-ray-curable polymer component. The monomer and/or oligomer of more than one energy ray hardening group is preferably 10 to 250 parts by mass, especially 25 to 100 parts by mass.

At this time, similarly to the above, the photopolymerization initiator (C), the crosslinking agent (E), and the like can also be appropriately formulated.

The thickness of the adhesive layer 20 is not particularly limited as long as it has an appropriate function in each step of using the sheet 1 for semiconductor processing. Specifically, 1-50μm is preferred, 2-40μm is particularly preferred, and 3-30μm is more preferred.

(2) Adhesive layer

As a material constituting the adhesive layer 40, as long as the wafer can be fixed at the time of dicing and the adhesive layer can be formed on individual wafers, there are no particular restrictions and can be used. As a material constituting such an adhesive layer 40, a thermoplastic resin and a low molecular weight thermosetting adhesive component, a B-stage (semi-hardened) thermosetting adhesive component, etc. can be used. Among these, as the material constituting the adhesive layer 40, it is preferable to contain a thermoplastic resin and a thermosetting adhesive component. As thermoplastic resins, (meth)acrylic copolymers, polyester resins, urethane resins, phenoxy resins, polybutenes, Polybutadiene, polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, ethylene (meth)acrylic copolymer, ethylene (meth)acrylate copolymer, polyphenylene Ethylene, polycarbonate, polyimide, etc., especially in terms of adhesion and film-forming properties (sheet processability), are preferably (meth)acrylic copolymers. Examples of the thermosetting adhering component include epoxy resins, polyimide resins, phenol resins, silicone resins, cyanate ester resins, and bismaleimide triazine resins. , Allylated polyphenylene ether resins (thermosetting PPE), formaldehyde resins, unsaturated polyesters or their copolymers, etc., especially from the standpoint of adhesion, epoxy resins are preferred. As a material constituting the adhesive layer 40, in terms of excellent adhesion to semiconductor wafers, especially the excellent peelability between the semiconductor processing sheet 1d and the adhesive layer 20 shown in FIG. 6, Materials containing (meth)acrylic copolymers and epoxy resins are particularly preferred.

The (meth)acrylic copolymer is not particularly limited, and conventionally known (meth)acrylic copolymers can be used. The weight average molecular weight (Mw) of the (meth)acrylic copolymer is preferably 10,000-2,000,000, particularly preferably 100,000-1,500,000. When the Mw of the (meth)acrylic copolymer is 10,000 or more, especially in the semiconductor processing sheet 1d shown in Figure 6, the releasability of the adhesive layer 40 and the adhesive layer 20 becomes better and can be Pick up wafers efficiently. In addition, when the Mw of the (meth)acrylic copolymer is 2,000,000 or less, the adhesive layer 40 can better follow the unevenness of the adherend and can effectively prevent the generation of voids and the like.

The glass transition temperature (Tg) of the (meth)acrylic copolymer is preferably -60~70°C, more preferably -30~50°C. The Tg of (meth)acrylic copolymer is above -60℃, especially the semiconductor processing board shown in Figure 6 In the sheet 1d, the releasability of the adhesive layer 40 and the adhesive layer 20 becomes better, and the wafer can be picked up efficiently. In addition, since the Tg of the (meth)acrylic copolymer is 70°C or less, it is possible to sufficiently obtain the adhesive force for fixing the wafer.

Examples of monomers constituting the (meth)acrylic copolymer include (meth)acrylate monomers or derivatives thereof, and more specifically, for example, methyl (meth)acrylate, (meth) ) Ethyl acrylate, (meth) propyl acrylate, (meth) butyl acrylate and other alkyl (meth)acrylates with alkyl groups of 1 to 18 carbon atoms; cycloalkyl (meth)acrylate, (meth) Base) benzyl acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, (Meth)acrylic acid esters with cyclic skeleton such as (meth)acrylic acid imine ester; (meth)hydroxymethyl acrylate, (meth)acrylate 2-hydroxyethyl, (meth)acrylate 2-hydroxy Hydroxy-containing (meth)acrylate such as propyl ester; glycidyl acrylate, glycidyl methacrylate, etc. In addition, carboxyl group-containing unsaturated monomers such as acrylic acid, methacrylic acid, and itaconic acid can also be used. These may be used individually by 1 type, and may use 2 or more types together.

As the monomer constituting the (meth)acrylic copolymer, among the above, it is preferable to use at least a hydroxyl group-containing (meth)acrylate in terms of compatibility with the epoxy resin. At this time, in the (meth)acrylic copolymer, the structural unit derived from the hydroxyl-containing (meth)acrylate is preferably contained in the range of 1-20% by mass, and preferably in the range of 3-15% by mass. It is better to contain in the range. As the (meth)acrylic copolymer, specifically, a copolymer of an alkyl (meth)acrylate and a hydroxyl group-containing (meth)acrylate is preferable.

In addition, the (meth)acrylic copolymer can copolymerize monomers such as vinyl acetate, acrylonitrile, styrene, etc., within a range that does not impair the purpose of the present invention. combine.

As the epoxy resin, various conventionally known epoxy resins can be used. Examples of epoxy resins include bisphenol A epoxy resins, bisphenol F epoxy resins, phenylene skeleton epoxy resins, phenol novolac epoxy resins, and cresol novolac epoxy resins. , Dicyclopentadiene (DCPD) epoxy resin, biphenyl epoxy resin, triphenolmethane epoxy resin, heterocyclic epoxy resin, stilbene epoxy resin, condensed aromatic hydrocarbon modified ring Oxygen resins, epoxy resins containing two or more functional groups in the structural unit such as the above-mentioned halide, etc. These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

The epoxy equivalent of epoxy resin is not specifically limited. The epoxy equivalent is usually 150~1000g/eq. In addition, the epoxy equivalent in this specification is a value measured based on JIS K7236:2009.

The content of the epoxy resin is preferably 1 to 1500 parts by mass, and more preferably 3 to 1000 parts by mass relative to 100 parts by mass of the (meth)acrylic copolymer. When the content of the epoxy resin is 1 part by mass or more with respect to 100 parts by mass of the (meth)acrylic copolymer, sufficient adhesive force can be obtained. Moreover, when the content of the epoxy resin is 1500 parts by mass or less with respect to 100 parts by mass of the (meth)acrylic copolymer, sufficient film-forming properties can be obtained and the adhesive layer 40 can be efficiently formed.

The material constituting the adhesive layer 40 preferably further contains a curing agent for curing the epoxy resin. Examples of the curing agent include compounds having two or more functional groups capable of interacting with epoxy groups in the molecule. Examples of the functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and acid anhydride groups. Among these, phenolic hydroxyl group, amino group and acid anhydride group are preferred, and phenolic hydroxyl group and amino group are preferred. For better.

Specific examples of the curing agent include phenolic thermosetting agents such as novolak type phenol resin, dicyclopentadiene type phenol resin, trisphenol methane type phenol resin, and aralkylphenol resin; DICY (Cyanoguanidine) and other amine-based thermal hardeners. The curing agent may be used singly, or two or more of them may be used in combination.

The content of the hardener is preferably 0.1 to 500 parts by mass, preferably 1 to 200 parts by mass relative to 100 parts by mass of the epoxy resin. When the content of the curing agent is 0.1 parts by mass or more with respect to 100 parts by mass of the epoxy resin, sufficient adhesive force can be obtained. Moreover, when the content of the curing agent is 500 parts by mass or less with respect to 100 parts by mass of the epoxy resin, it is possible to effectively prevent the moisture absorption rate of the adhesive layer 40 from increasing and to make the reliability of the semiconductor device more excellent.

The material (adhesive composition) constituting the adhesive layer 40 can also contain hardening accelerators, coupling agents, crosslinking agents, energy ray hardening compounds, photopolymerization initiators, and plasticizers as required in addition to the above. , Antistatic agents, antioxidants, pigments, dyes, inorganic fillers and other additives. These various additives may be contained individually by 1 type, and may be contained in combination of 2 or more types.

The hardening accelerator is used to adjust the hardening speed of the adhesive composition. As the hardening accelerator, a compound capable of accelerating the reaction of epoxy groups with phenolic hydroxyl groups, amines, and the like is preferred. Specific examples of such compounds include tertiary amines, imidazoles such as 2-phenyl-4,5-bis(hydroxymethyl)imidazole, organic phosphines, and tetraphenyl boron salts.

The coupling agent has the ability to adhere to the substrate of the adhesive composition. The function of improving adhesion. In addition, by using a coupling agent, the heat resistance of the cured product obtained by curing the adhesive composition can be improved without impairing the heat resistance of the cured product The water resistance. The coupling agent is preferably a compound having a group reactive with the functional group possessed by the (meth)acrylic polymer and epoxy resin. As such a coupling agent, a silane coupling agent is preferred.

As the silane coupling agent, there is no particular limitation, and conventional ones can be used. For example, γ-glycidoxy propyl trimethoxysilane, γ-glycidoxy propyl methyl diethoxy silane, β -(3,4-epoxycyclohexyl) ethyl trimethyl Oxyoxysilane, γ-(methacryloxypropyl)trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropyltrimethoxysilane , N-6-(aminoethyl)-γ-aminopropylmethyl diethoxysilane, N-phenyl-γ-aminopropyl trimethoxysilane, γ-ureapropyl triethoxysilane, γ-Hydroxypropyltrimethoxysilane, γ-Hydroxypropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane , Methyl triethoxysilane, vinyl trimethoxysilane, vinyl triethoxysilane, imidazole silane, etc. These can be used individually by 1 type or in mixture of 2 or more types.

The crosslinking agent is for adjusting the cohesive force of the adhesive layer 40. The crosslinking agent of the (meth)acrylic polymer is not particularly limited, and conventional ones can be used. For example, the above can be used as the material constituting the adhesive layer 20.

The energy-ray curable compound is a compound that undergoes polymerization and curing by being irradiated with energy rays such as ultraviolet rays. The energy ray curable compound is cured by energy ray irradiation, especially in the semiconductor processing sheet 1d shown in Figure 6, because the peelability of the adhesive layer 40 and the adhesive layer 20 can be improved, so the pickup system of semiconductor wafers Becomes easy.

As an energy-ray curable compound, acrylic compounds are preferred, and those having at least one polymerizable double bond in the molecule are particularly preferred. An acrylic compound, specifically, dicyclopentadiene dimethoxy diacrylate, trimethylolpropane triacrylate, neopentaerythritol triacrylate, neopentaerythritol tetraacrylate, Dineopentaerythritol monohydroxy pentaacrylate, dineopentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, Oligopolyester acrylate, urethane acrylate oligomer, epoxy modified acrylate, polyether acrylate, itaconic acid oligomer, etc.

The weight average molecular weight of the acrylic compound is usually 100 to 30,000, preferably about 300 to 10,000.

When the adhesive composition contains an energy ray hardening compound, the content of the energy ray hardening compound is relative to 100 parts by mass of the (meth)acrylic polymer, usually 1 to 400 parts by mass, preferably 3 to 300 parts by mass , Preferably 10 to 200 parts by mass.

When the adhesive layer 40 contains the above-mentioned energy ray curable compound, the photopolymerization initiator can reduce the polymerization hardening time and the irradiation amount of the energy ray when the photopolymerization initiator is polymerized and cured by the irradiation of energy rays. The photoinitiator is not particularly limited, and conventional materials can be used. For example, the above-mentioned materials can be used as the material constituting the adhesive layer 20.

The thickness of the adhesive layer is usually 3 to 100 μm, preferably 5 to 80 μm.

(3) Protective film forming layer

The protective film forming layer 50 is preferably composed of an uncured curable adhesive. At this time, after stacking the semiconductor wafer, semiconductor wafer, etc. on the protective film forming layer 50, by curing the protective film forming layer 50, the protective film can be firmly adhered to the semiconductor wafer, semiconductor wafer, etc. The formation of wafers is resistant to Long-lasting protective film. By irradiating the protective film forming layer 50 with laser light at the stage where the curable adhesive is not cured or at the stage after curing, good printing can be achieved.

Preferably, the protective film forming layer 50 has adhesiveness at room temperature or exhibits adhesiveness by heating. Thereby, as described above, when the protective film forming layer 50 is laminated with a semiconductor wafer, a semiconductor wafer, etc., the two can be bonded together. Therefore, before hardening the protective film formation layer 50, positioning can be performed reliably, and the workability of the sheets 1c and 1e for semiconductor processing becomes easy.

The curable adhesive constituting the protective film forming layer 50 having the above-mentioned characteristics preferably contains a curable component and a binder polymer component. As the curable component, a thermosetting component, an energy ray curable component, or a mixture thereof can be used. From the viewpoint of the curing method of the protective film forming layer 50 and the heat resistance after curing, it is particularly preferable to use a thermosetting component, and from the viewpoint of curing time, it is preferable to use an energy ray-curable component.

嗪系樹脂等及其混合物。這些之中，能夠適合使用環氧系樹脂、酚系樹脂及其混合物。作為熱硬化性成分，通常使用分子量300~10,000左右者。 Examples of thermosetting components include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, Benzo

Oxazine resins, etc. and their mixtures. Among these, epoxy resins, phenol resins, and mixtures thereof can be suitably used. As the thermosetting component, those with a molecular weight of about 300 to 10,000 are generally used.

Epoxy resins have the property of forming a three-dimensional network and forming a strong film when heated. As such epoxy resins, various known epoxy resins can be used, and generally those having a weight average molecular weight of about 300 to 2500 are preferred. In addition, it is based on epoxy resin with a weight average molecular weight of 300 to 500 in a normal state, and a weight average molecular weight of 400 to 2500, especially It is better to use it in the form of a blended epoxy resin with an average weight of 500-2000 that is solid at room temperature. In addition, the epoxy equivalent of the epoxy resin is preferably 50 to 5000 g/eq.

烷等將分子內的碳-碳雙鍵例如藉由氧化而導入環氧基而成之所謂脂環型環氧化物。此外，亦能夠使用具有聯苯骨架、二環己二烯骨架、萘骨架等之環氧系樹脂。 Specific examples of such epoxy resins include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; butylene glycol Glycidyl ethers of alcohols such as, polyethylene glycol and polypropylene glycol; glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid and tetrahydrophthalic acid; bonded with glycidyl Epoxy resin of glycidyl type or alkyl glycidyl type substituted by the active hydrogen of the nitrogen atom of aniline isocyanurate, etc.; such as vinyl cyclohexane diepoxide, 3, 4-epoxycyclohexylmethyl-3,4-dicyclohexane carboxylate, 2-(3,4-epoxy)cyclohexyl-5,5-spiro(3,4-epoxy)cyclohexane -Room two

Alkanes and the like are so-called alicyclic epoxides in which a carbon-carbon double bond in a molecule is introduced into an epoxy group by oxidation, for example. In addition, epoxy resins having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, and the like can also be used.

Among these, bisphenol-based glycidyl type epoxy resins, ortho-cresol novolac type epoxy resins, and phenol novolak type epoxy resins can be suitably used. These epoxy resin systems can be used individually by 1 type or in combination of 2 or more types.

When epoxy resin is used, it is better to use a thermally active latent epoxy resin hardener as an auxiliary agent. The so-called thermally active latent epoxy resin curing agent is a type of curing agent that does not react with epoxy resin at room temperature, but is activated by heating above a certain temperature and reacts with epoxy resin. The activation method of the thermally active latent epoxy resin hardener is a method of generating a chemical reaction by heating and generating active species (anions, cations); It is stably dispersed in epoxy resin at room temperature, and it is compatible with epoxy resin at high temperature. The method of dissolving and starting the hardening reaction; the method of using molecular sieve-enclosed hardener, which dissolves at high temperature and starting the hardening reaction; the method of using microcapsules, etc.

Specific examples of thermally active latent epoxy resin curing agents include various high melting point active hydrogen compounds such as onium salts, dibasic acid dihydrazide compounds, cyanoguanidine, amine adduct curing agents, and imidazole compounds. Wait. These thermally active latent epoxy resin curing agents can be used alone or in combination of two or more. The above-mentioned thermally active latent epoxy resin curing agent is based on 100 parts by mass of epoxy resin, preferably 0.1-20 parts by mass, particularly preferably 0.2-10 parts by mass, more preferably 0.3 Use at a ratio of ~5 parts by mass.

As the phenol resin, polymers having phenolic hydroxyl groups such as condensation products of phenols and aldehydes, such as alkylphenols, polyphenols, and naphthols, can be used without particular limitations. Specifically, phenol novolac resin, o-cresol novolac resin, p-cresol novolac resin, tertiary butylphenol novolac resin, dicyclopentadiene cresol resin, poly Vinyl phenol resin, bisphenol A novolac resin, or modified products thereof.

The phenolic hydroxyl group contained in these phenolic resins can easily undergo an addition reaction with the epoxy group of the epoxy resin by heating, and can form a cured product with high impact resistance. Therefore, epoxy resin and phenol resin can also be used together.

As the energy ray curable component, for example, the aforementioned substances can be used as the material constituting the adhesive layer 20. In addition, as the energy ray curable component, an energy ray curable monomer/oligomer may also be used. And, as hardened with energy rays The adhesive polymer component of the combination of the sexual component can also use the acrylic polymer added with the energy ray curable compound.

The binder polymer component is formulated for the purpose of providing appropriate adhesiveness to the protective film forming layer 50, or improving the operability of the semiconductor processing plates 1c and 1e. The weight average molecular weight of the binder polymer is usually 30,000 to 2,000,000, preferably 50,000 to 1,500,000, and particularly preferably in the range of 100,000 to 1,000,000. When the weight average molecular weight is 30,000 or more, the film formation system of the protective film forming layer 50 becomes sufficient. Moreover, when the weight average molecular weight is 2,000,000 or less, the compatibility with other components can be maintained well, and the film formation of the protective film forming layer 50 can be performed uniformly. As such a binder polymer, for example, (meth)acrylic copolymers, polyester resins, phenoxy resins, urethane resins, silicone resins, rubber copolymers, etc. can be suitably used. In particular, (meth)acrylic copolymers can be suitably used.

As the (meth)acrylic copolymer, for example, a (meth)acrylate copolymer obtained by polymerizing a (meth)acrylate monomer and a (meth)acrylic acid derivative can be mentioned. Here, as the (meth)acrylate monomer, an alkyl (meth)acrylate having an alkyl group of 1 to 18 carbon atoms is preferred. For example, methyl (meth)acrylate and (meth)acrylic acid can be used. Ethyl, propyl (meth)acrylate, butyl (meth)acrylate, etc. In addition, examples of (meth)acrylic acid derivatives include (meth)acrylic acid, glycidyl (meth)acrylate, and hydroxyethyl (meth)acrylate.

Among the above, if glycidyl methacrylate or the like is used as a structural unit and a glycidyl group is introduced into the (meth)acrylic copolymer, it will be in phase with the epoxy resin as the aforementioned thermosetting component. Improved solubility and protective film The glass transition temperature (Tg) of the formed layer 50 after hardening becomes higher and the heat resistance improves. In addition, among the above, if hydroxyethyl acrylate or the like is used as a structural unit and a hydroxyl group is introduced into the (meth)acrylic copolymer, it is possible to control adhesion and adhesion properties to semiconductor wafers, semiconductor wafers, and the like. In addition, if glycidyl methacrylate or the like is used as a structural unit and a glycidyl group is introduced into the (meth)acrylic copolymer, this (meth)acrylic copolymer is a phenoxy group having an epoxy group. Base resins and the like have thermosetting properties. However, such a thermosetting polymer is not a thermosetting component in this embodiment, but is equivalent to a binder polymer component.

When a (meth)acrylic copolymer is used as the binder polymer, the weight average molecular weight of the (meth)acrylic copolymer is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. The glass transition temperature of the (meth)acrylic copolymer is usually 20°C or less, preferably about -70 to 0°C, and has adhesiveness at normal temperature (23°C).

As a blending ratio of the curable component and the binder polymer component, relative to 100 parts by mass of the binder polymer component, the curable component is preferably blended at 50 to 1500 parts by mass, particularly preferably 70 to 1000 parts by mass. , More preferably, 80~800 parts by mass. If the curable component and the binder polymer component are blended in such a ratio, they will show appropriate viscosity before curing and can be applied stably, and after curing, a protective film with excellent film strength can be obtained. .

The protective film forming layer 50 can contain a filler and/or a coloring agent. However, when the semiconductor processing plates 1c and 1e are used for wafer shape inspection, stealth dicing, or laser printing of semiconductor wafers, the protective film forming layer 50 must have light transmittance. Therefore, at this time, it is necessary to contain a filler and/or a coloring agent to the extent that the light transmittance is not hindered. On the other hand, the use of semiconductor processing When the plates 1c and 1e are used for laser printing of the protective film forming layer 50 or the protective film formed by dividing them into pieces, the protective film forming layer 50 is not required to have light transmittance. At this time, in order to enable laser printing, the protective film forming layer 50 must block the laser light. Therefore, in order to efficiently perform laser printing, the protective film forming layer 50 preferably contains fillers and/or colorants. In addition, if the protective film forming layer 50 contains a filler, the hardness of the protective film after curing can be maintained high, and the moisture resistance can be improved. Moreover, it is also possible to adjust the glossiness of the formed protective film surface to a required value. Furthermore, the thermal expansion coefficient of the cured protective film can be made close to the thermal expansion coefficient of the semiconductor wafer, and therefore, the warpage of the semiconductor wafer during processing can be reduced.

Examples of fillers include inorganic fillers such as crystalline silica, fused silica, and synthetic silica, alumina, and glass balloons. In particular, synthetic silicon oxide is preferred, and synthetic silicon oxide is particularly preferred. The synthetic silicon oxide is a type in which the source of the alpha line, which is the main cause of the malfunction of the semiconductor device, is removed as much as possible. The shape of the filler may be any of spherical, acicular, and amorphous.

In addition, as the filler added to the protective film forming layer 50, a functional filler may be blended in addition to the above-mentioned inorganic filler. Examples of functional fillers include conductive fillers made of gold, silver, copper, nickel, aluminum, stainless steel, carbon, ceramics, or silver coated with nickel, aluminum, etc., for the purpose of imparting antistatic properties; Metal materials such as gold, silver, copper, nickel, aluminum, stainless steel, silicon, germanium, etc., and thermal conductive fillers such as the above-mentioned alloys, etc., are provided for thermal conduction purposes.

As the coloring agent, conventional materials such as inorganic pigments, organic pigments, and organic dyes can be used.

Examples of inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO ( Indium tin oxide; Indium Tin Oxide) pigments, ATO (antimony tin oxide) pigments, etc.

嗪系色素、喹吖酮(quinacridone)系色素、異吲哚滿酮系色素、喹啉黃(quinophthalone)系色素、吡咯系色素、硫靛藍系色素、金屬錯合物系色素(金屬錯鹽染料)、二硫醇金屬錯合物系色素、吲哚酚系色素、三烯丙基甲烷系色素、蒽醌系色素、二

嗪系色素、萘酚系色素、甲亞胺系色素、苯并咪唑酮系色素、吡蒽二酮(pyranthron)系色素及士林(threne)系色素等。為了調整目標光線透射率，這些顏料或染料係能夠適當地混合而使用。 Examples of organic pigments and organic dyes include amine-based pigments, anthocyanin-based pigments, merocyanine-based pigments, croconium-based pigments, and squalium. Pigments, azulenium (azulenium) pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalocyanine pigments, naphtholactam pigments, azo Dyes, condensed azo dyes, indigo dyes, perinone dyes, perylene dyes, two

Oxazine pigments, quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex salt dyes) ), dithiol metal complex dyes, indoxyl dyes, triallylmethane dyes, anthraquinone dyes, two

Triazine-based pigments, naphthol-based pigments, azomethine-based pigments, benzimidazolone-based pigments, pyranthron-based pigments, and threne-based pigments, etc. In order to adjust the target light transmittance, these pigments or dyes can be appropriately mixed and used.

From the standpoint of printability by laser light irradiation, among the above-mentioned pigments, it is particularly preferable to use inorganic pigments. Among inorganic pigments, carbon black is particularly preferred. Carbon black is usually black, but the part that is shaved off by the laser light is white. Because the contrast becomes larger, the laser-printed part has very excellent visibility.

The blending amount of the filler and coloring agent in the protective film forming layer 50, It only needs to be adjusted appropriately in a way that can achieve the desired effect. Specifically, the blending amount of the filler is generally preferably 40 to 80% by mass, and particularly preferably 50 to 70% by mass. In addition, the blending amount of the coloring agent is usually preferably 0.001 to 5 mass%, particularly preferably 0.01 to 3 mass%, and more preferably 0.1 to 2.5 mass%.

The protective film forming layer 50 may also contain a coupling agent. By containing the coupling agent, after the protective film forming layer 50 is cured, the heat resistance of the protective film is not impaired, and the adhesiveness of the protective film and the semiconductor wafer, semiconductor wafer, etc. can be made. At the same time as the adhesion is improved, the water resistance (humidity and heat resistance) can be improved. As the coupling agent, in terms of its versatility and cost advantages, the silane coupling agent is preferred. As the silane coupling agent, the aforementioned can be used, for example.

The protective film forming layer 50 may contain a crosslinking agent such as an organic polyvalent isocyanate-based compound, an organic polyimine-based compound, an organometallic clamp-based compound, etc., in order to adjust the cohesive force before curing. In addition, the protective film forming layer 50 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the wafer. Furthermore, the protective film forming layer 50 may contain flame retardants such as phosphoric acid-based compounds, bromine-based compounds, and phosphorus-based compounds in order to improve the flame-retardant performance of the protective film and the reliability as a component.

The thickness of the protective film forming layer 50 is to effectively perform the function as a protective film, and is preferably 3 to 300 μm, particularly preferably 5 to 250 μm, and more preferably 7 to 200 μm.

The gloss value of the first surface 501 of the protective film forming layer 50 is preferably 25 or more, particularly preferably 30 or more. Since the gloss value of the first surface 501 is 25 or more, when laser printing is performed on this surface, the appearance is excellent, and the formed printing has excellent visibility. Also, the gloss value in this manual is According to JIS Z 8741: 1997, the value measured at a measurement angle of 60° with a gloss meter.

5. Adhesive layer for jigs

The sheet for semiconductor processing of this embodiment may be further provided with an adhesive layer for jigs. FIG. 8 is a cross-sectional view of the semiconductor processing plate 2 provided with the second embodiment of the adhesive layer 60 for jigs. In the semiconductor processing sheet 2, the jig adhesive layer 60 has a first surface 601 on the proximal side of the semiconductor attachment layer 80 and a second surface 602 on the proximal side of the release film 30. In addition, the adhesive layer 60 for a jig is formed in a shape corresponding to the shape of a jig such as a ring frame, and is usually formed in a ring shape. Thereby, irrespective of the adhesive force of the semiconductor attachment layer 80, it is possible to attach the semiconductor processing sheet 2 to a jig such as a ring frame and to securely fix it.

In the semiconductor processing sheet 2 of the second embodiment, as shown in FIG. 8, the adhesive layer 60 for jigs is in contact with the first surface 301 of the release film 30. Also, as shown in FIG. 8, in the center portion of the semiconductor processing sheet 2 where the jig adhesive layer 60 is not present, the 802 series of the second surface of the semiconductor attachment layer 80 is in contact with the first surface 301 of the release film 30 . Here, in the semiconductor processing sheet 2 of the second embodiment, when the semiconductor processing sheet 2 is wound into a roll shape, the rolling pressure is concentrated at the position where the jig adhesive layer 60 exists. Accompanying this situation, adhesion is also likely to occur at the position where the jig adhesive layer 60 exists. Therefore, whether or not the main conductor processing sheet 2 is well wound from the roll, the adhesion between the first surface 301 of the release film 30 and the second surface 602 of the jig adhesive 60 has a significant influence. Therefore, in the semiconductor processing sheet 2, the peeling blade at the interface between the second surface 602 of the jig adhesive layer 60 and the first surface 301 of the peeling film 30 is set as the peeling force β . Specifically, the peeling force β is set in a state where the second surface 602 of the jig adhesive layer 60 and the first surface 301 of the peeling film 30 are laminated, and after storage at 40°C for 3 days under predetermined conditions , The peeling force of the peeling film 30 to the adhesive layer 60 for jigs. On the other hand, the peeling force α is set as the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30, similarly to the semiconductor processing sheet of the first embodiment described above. .

The adhesive layer 60 for jigs in this embodiment may be composed of a single layer, or may be composed of multiple layers of two or more layers. In the case of multiple layers, it is preferable that the core material enters the interval.

The adhesive that constitutes the adhesive layer 60 for jigs is preferably made of a non-energy-ray-curable adhesive from the standpoint of adhesion to jigs such as ring frames. As a non-energy-ray-curable adhesive, it is better to have the necessary adhesive strength and releasability. For example, acrylic adhesives, rubber-based adhesives, silicone-based adhesives, and urethane-based adhesives can be used. Adhesives, polyester-based adhesives, polyvinyl ether-based adhesives, etc., especially acrylic adhesives that are easier to control the adhesive force and re-peelability.

As the core material, a resin film can usually be used, and a polyvinyl chloride film such as a polyvinyl chloride film and a vinyl chloride copolymer film is particularly preferred, and a polyvinyl chloride film is particularly preferred. Polyvinyl chloride film has the property of being softened even if heated, and easy to recover when cooled. The thickness of the core material is preferably 2~200μm, especially 5~100μm.

The thickness of the jig adhesive layer 60 is preferably 5 to 200 μm, and particularly preferably 10 to 100 μm from the viewpoint of adhesion to a jig such as a ring frame.

The semiconductor processing sheet 2 with the adhesive layer 60 for jigs has a good arithmetic average roughness Ra on the first surface 101 of the substrate 10 at 0.01~0.8μm, and the smoothness of this surface is good. At least the substrate 10 has high light transmittance to light of the required wavelength. Moreover, since the ratio of the peeling force α to the peeling force B ( α / β ) is 0 or more and less than 1.0, excellent adhesion resistance can be exerted, and the semiconductor processing sheet 2 can be successfully rolled from the roll. At the same time, undesired peeling does not occur when unrolling. In addition, with the peeling force β of 10 to 1000 mN/50mm, when the semiconductor processing sheet 2 is used, the substrate 10, the semiconductor adhesive layer 80, and the jig adhesive layer 60 can be separated with an appropriate peeling force. The laminate is peeled off from the release film 30.

6. Pre-cut

The sheet for semiconductor processing of the present embodiment may be in a state in which layers other than the release film 30 are cut and processed into a desired shape, so-called pre-cut. That is, the semiconductor processing sheet of the present embodiment may be formed by laminating a long release film 30 with a laminate having a shape different from the release film 30 in a plan view and including the substrate 10 and the semiconductor attachment layer 80 . Fig. 9 is a plan view of the semiconductor processing plate 3 of the third embodiment after such pre-cutting is viewed from the side of the substrate. In the semiconductor processing sheet 3, a long release film 30 is provided with a laminate of a base material 10a cut into a circular shape and a semiconductor attachment layer 80a (hereinafter referred to as a "main use part"). A plurality of main use parts are arranged in the longitudinal direction of the release film 30. In addition, the both ends of the release film 30 in the longitudinal direction are provided with a laminate of the cut base 10b and the semiconductor attachment layer 80b (hereinafter referred to as "plate "Remaining part"). In addition, Fig. 10 shows a cross-sectional view taken along the line A-A in Fig. 9.

The pre-cut sheet 3 for semiconductor processing also satisfies the above-mentioned physical properties and the like for the sheet 1 for semiconductor processing. Moreover, as each layer which comprises the sheet|seat 3 for semiconductor processing, the thing mentioned above for the sheet|seat 1 for semiconductor processing can be used.

In addition, the semiconductor processing sheet 2 including the above-mentioned jig adhesive layer 60 can be a sheet after pre-cutting. In this plate, the jig adhesive layer 60 is provided on the peripheral edge of the main use part.

In the semiconductor processing sheet 3, after the main use part is peeled from the release film 30, it is attached to a semiconductor wafer, a semiconductor wafer, and the like. On the other hand, the plate remaining part prevents the winding pressure from being concentrated in the main use part when the plate 3 for semiconductor processing is wound into a roll shape.

Generally, the pre-cut semiconductor processing sheet is likely to cause peeling of the main use part from the release film when it is unrolled from the roll, and the substrate side of the main use part after this peeling is attached to the second surface of the release film Waiting for the bad. However, using the semiconductor processing sheet 3 of the third embodiment, the value of the ratio of the peeling force α to the peeling force β (α / β ) is 0 or more and less than 1.0, so that the occurrence of such defects can be suppressed. In addition, since the arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 to 0.8 μm, the smoothness on this surface becomes good and at least the substrate 10 has a higher light beam for the required wavelength of light. Transmittance. Furthermore, when the peeling force β is 10 to 1000 mN/50 mm, when the semiconductor processing sheet 3 is used, the peeling film 30 can be peeled from the semiconductor attachment layer 80 with an appropriate peeling force.

7. Manufacturing method of plates for semiconductor processing

The manufacturing method of the sheet 1a for semiconductor processing containing the adhesive layer 20 is not specifically limited, A common method can be used. As the first example of this manufacturing method, first, an adhesive group containing a material containing an adhesive layer 20 is prepared Finished product, and further according to the required solvent or dispersion medium coating composition. Next, use a die coater, curtain coater, spray coater, slit coater, knife coater, etc., to coat this coating composition on the first surface 301 of the release film 30 To form a coating film. Furthermore, by drying this coating film, the adhesive layer 20 can be formed. Subsequently, by bonding the first surface 201 of the adhesive layer 20 and the second surface 102 of the base material 10 together, the sheet 1a for semiconductor processing can be obtained. The properties of the coating composition system are not particularly limited as long as it can be coated. The components for forming the adhesive layer 20 may be contained in the coating composition as a solute or as a dispersant.

When the coating composition system contains a crosslinking agent (E), in order to form a crosslinked structure with a required existence density, the above-mentioned drying conditions (temperature, time, etc.) may be changed or heat treatment may be additionally provided. In order to fully progress the crosslinking reaction, usually the above-mentioned method is used to laminate the adhesive layer on the substrate, and then the obtained semiconductor processing sheet 1a is allowed to stand for several days in an environment of, for example, 23°C and 50% relative humidity. Set it to mature.

As a second example of the method of manufacturing the sheet 1a for semiconductor processing, first, the above-mentioned coating composition is coated on the second surface 102 of the substrate 10 to form a coating film. Next, the coating film is dried to form a laminate composed of the base material 10 and the adhesive layer 20. In addition, by bonding the second surface 202 of the adhesive layer 20 in this laminate and the first surface 301 of the release film 30, the semiconductor processing sheet 1a can be obtained.

The manufacturing method of the sheet 1b for semiconductor processing containing the adhesive layer 40 is not specifically limited, A common method can be used. For example, by incorporating an adhesive composition containing a material containing the adhesive layer 40, and further according to needs The coating composition of the desired solvent or dispersion medium is coated on the first surface 301 of the release film 30 and dried to form the adhesive layer 40. Subsequently, by bonding the first surface 401 of the adhesive layer 40 and the second surface 102 of the base material 10 together, the semiconductor processing sheet 1b is obtained.

The manufacturing method of the sheet 1c for semiconductor processing containing the protective film formation layer 50 can be manufactured with reference to the manufacturing method of the sheet 1b for semiconductor processing mentioned above. In particular, in the manufacturing method of the semiconductor processing sheet 1b, the adhesive composition containing the material of the adhesive layer 40 can be replaced with the protective film forming layer composition containing the material of the protective film forming layer 50, and A sheet 1c for semiconductor processing can be obtained.

The manufacturing method of the sheet 1d for semiconductor processing containing the adhesive layer 20 and the adhesive layer 40 is not specifically limited, A common method can be used. For example, an adhesive composition containing a material containing the adhesive layer 40, and a solvent or dispersion medium as necessary, are applied to the first surface 301 of the release film 30 and dried. Then, the adhesive layer 40 is formed. Thereby, a laminate of the release film 30 and the adhesive layer 40 can be obtained. Next, the release film 30 is peeled off the prepared semiconductor processing sheet 1a in advance, and the exposed surface of the adhesive layer 20 and the surface of the adhesive layer 40 of the laminate can be bonded together. The plate 1d for semiconductor processing is obtained.

The sheet 1e for semiconductor processing including the adhesive layer 20 and the protective film formation layer 50 can be manufactured with reference to the manufacturing method of the sheet 1d for semiconductor processing mentioned above. Especially in the method of manufacturing the semiconductor processing sheet 1d, the adhesive composition containing the material of the adhesive layer 40 can be replaced with the protective film forming layer composition containing the material of the protective film forming layer 50, and were able The sheet 1e for semiconductor processing is obtained.

The semiconductor processing board 2 including the adhesive layer 60 for jigs can be manufactured by a common method. For example, it can be manufactured by laminating the adhesive layer 60 for jigs formed in the desired shape on the surface of the laminate including the substrate 10 and the semiconductor attachment layer 80 on the opposite side to the substrate 10 Plate 2 for semiconductor processing.

In addition, in the case of a sheet obtained by pre-cutting the sheet 2 for semiconductor processing including the adhesive layer 60 for jigs, it can be manufactured as follows, for example. First, the adhesive for jigs used to form the adhesive 60 for jigs is formed into a sheet shape on the peeling surface of the peeling film 30. Next, the part of the inner peripheral edge of the adhesive layer 60 for the slab-shaped jig is cut (half-cut) with the peeling film 30 remaining on the part of the adhesive layer 60 for the slab-shaped jig. The round part on the inside is removed. Next, the laminated body composed of the sheet-shaped jig adhesive and the release film 30 from which the circular portion has been removed is attached to the side surface of the sheet-shaped jig adhesive side which is prepared separately from the base material 10 and The semiconductor adhesion layer 80 side of the laminated body composed of the semiconductor adhesion layer 80. Thereby, it is possible to obtain a laminate in which the release film 30, the adhesive for sheet jigs, the semiconductor attachment layer 80, and the base material 10 are laminated in this order. Finally, in this laminate, the release film 30 is left, and the jig adhesive, the semiconductor attachment layer 80, and the base material 10 are cut (half-cut). At this time, by cutting (half-cutting) the portion of the outer peripheral edge of the adhesive layer 60 for jigs with the release film 30 remaining, and removing unnecessary portions, the main use portion can be formed. Thereby, the adhesive for sheet-shaped jigs becomes the adhesive layer 60 for ring-shaped jigs. In addition, it is also possible to appropriately half-cut the position other than the part of the main use part to form the plate residual part.

There is no manufacturing method for pre-cut semiconductor processing plate 3 It is particularly limited, and commonly used methods can be used.

8. How to use plates for semiconductor processing

The semiconductor processing plates 1, 2, and 3 of this embodiment can be used as back grinding sheets, dicing sheets, and the like. When using the plates 1, 2, and 3, the laser can be irradiated from the back of the plate to cut. In addition, after the steps of back grinding, dicing, etc., the shapes of wafers, wafers, etc. can be inspected through the semiconductor processing plates 1, 2, 3 of this embodiment. Furthermore, it is also possible to perform laser printing on the back surface of wafers, chips, etc. through the semiconductor processing plate of this embodiment.

Also, in particular, the semiconductor processing plates 1b, 1d containing the adhesive layer 40 can be used as dicing. The wafer joins the plates. That is, after dicing the wafer on the semiconductor processing plates 1b, 1d and performing an expansion step as necessary, the obtained wafer is picked up to obtain a wafer provided with an adhesive layer. Furthermore, by using the sheets 1c and 1e for semiconductor processing including the protective film forming layer 50, a protective film can be formed on the back surface of the wafer. At this time, the semiconductor processing plates 1c, 1e including the protective film forming layer 50 are attached to the wafer, and the protective film forming layer 50 is cured. Next, the wafer is diced on the plates 1c and 1e for semiconductor processing, and an expansion step is performed as needed. Subsequently, by picking up the obtained wafer, a wafer with a protective film formed on the back surface can be obtained.

The semiconductor processing plates 1, 2, and 3 of the present embodiment can be wound into a roll-like state for storage and the like. The semiconductor processing plates 1, 2, and 3 of this embodiment are even when wound up, because the ratio of the peeling force α to the peeling force β (α / β ) is 0 or more and less than 1.0 as described above. Compared with the adhesion of the layers constituting the semiconductor processing plates 1, 2, and 3 of this embodiment, the adhesion of the semiconductor processing plates 1, 2, and 3 of this embodiment does not become higher. high. Therefore, it is possible to exhibit excellent adhesion resistance and perform good unwinding from the rolls of the semiconductor processing sheets 1, 2, and 3 of this embodiment, and it is possible to suppress undesired peeling between layers during unwinding. . In addition, since the arithmetic average roughness Ra on the first surface of the substrate 10 is 0.01 to 0.8 μm, the smoothness on this surface becomes good, and the substrate 10 has high light transmittance to light of the required wavelength. . As a result, laser cutting, inspection, and laser printing from the back surface as described above can be performed well. Moreover, because the peeling force β is 10~1000mN/50mm, when the wafer is attached to the semiconductor processing plates 1, 2, 3 of this embodiment, it is possible to use an appropriate peeling force to remove the substrate The laminate of 10 and the semiconductor attachment layer 80 is peeled off from the release film 30.

The embodiments described above are described in order to facilitate the understanding of the present invention, and are not described in order to limit the present invention. Therefore, the gist of each element disclosed in the above embodiment also includes all design changes and equivalents belonging to the technical scope of the present invention.

For example, other layers may also be interposed between the substrate 10 and the semiconductor attachment layer 80 of the semiconductor processing plates 1, 2, and 3 of this embodiment.

[Example]

Hereinafter, the present invention will be explained more specifically with examples and the like, but the scope of the present invention is not limited by these examples and the like.

[Example 1]

(1) Manufacturing of base material

The polyvinyl chloride film is produced as a base material by the calendering machine-made film method. The arithmetic average roughness Ra of the first side of this PVC film is 0.03μm, according to JIS K7161: 1994 and the MD direction tensile modulus (Younger modulus) measured at 23°C is 250 MPa and the thickness is 80 μm.

In addition, the arithmetic average roughness Ra in the present embodiment is measured at 10 points in the plane using a touch-type surface roughness meter ("SURFTEST SV-3000" manufactured by Mitsutoyo Co., Ltd.) in accordance with JIS B061:2013, and the average value is calculated .

Furthermore, for the above-mentioned substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for invisible cutting (wavelength: 1600nm), and the transmittance of infrared rays for inspection (wavelength: 1069nm) were evaluated. In the case of performance, both cases show excellent transmittance.

(2) Preparation of peeling film

As the release film, a release film (manufactured by LINTEC Corporation, product name "SP-PMF381031H") is used by peeling one side (first side) of a polyethylene terephthalate film with a silicone-based release agent. ", thickness: 38μm). The arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.3 μm.

(3) Preparation of adhesive composition (I)

Make 18.5 parts by mass of 2-ethylhexyl acrylate (in terms of solid content, the same below), 75 parts by mass of vinyl acetate, 1 part by mass of acrylic acid, 5 parts by mass of methyl methacrylate, and 0.5 parts by mass of 2-hydroxyethyl methacrylate Part of the copolymerization to obtain an acrylic copolymer with a weight average molecular weight of 600,000.

100 parts by mass of the obtained acrylic copolymer, 60 parts by mass of a bifunctional urethane acrylate oligomer (Mw=8000) as an energy ray curable compound, and a 6-functional urethane as an energy ray curable compound 60 parts by mass of acid ester acrylate oligomer (Mw=2000), 3 parts by mass of α -hydroxycyclohexyl phenyl ketone (manufactured by BASF Corporation, product name "IRGACURE 184") as a photopolymerization initiator, as a crosslinking agent 1.6 parts by mass of trimethylolpropane-modified toluene diisocyanate (manufactured by TOSOH, product name "CORONATE L") of the agent was mixed in a solvent to obtain a coating solution of adhesive composition (I).

(4) Manufacturing of plates for semiconductor processing

The coating solution of the adhesive composition (I) obtained in the above step (3) is coated on the first side of the release film produced in the above step (2) using a knife coater. Next, it was processed at 100° C. for 1 minute to dry the coating film, and a crosslinking reaction was performed to obtain a laminate composed of a release film and an adhesive layer having a thickness of 10 μm. Furthermore, by bonding the first surface of the adhesive layer of this laminate to the second surface of the substrate manufactured in the above step (1), the substrate, the adhesive layer and the release film are layered in order Integrated semiconductor processing plates. Subsequently, this semiconductor processing plate was aged for 7 days in an environment with a temperature of 23° C. and a relative humidity of 50%.

[Example 2]

(1) Manufacturing of base material

As the substrate, an ethylene-methacrylic acid copolymer film was produced using a T-die film forming method. The arithmetic average roughness Ra of the first side of the ethylene-methacrylic acid copolymer film is 0.05μm, and the tensile elastic modulus (Younger modulus) at 23°C in the MD direction measured in accordance with JIS K7161: 1994 is 130 MPa, The thickness is 80 μm.

In addition, for the above-mentioned substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for stealth cutting (wavelength: 1600nm), and the transmittance of infrared rays for inspection (wavelength: 1069nm) were evaluated. In the case of performance, both cases show excellent transmittance.

(2) Preparation of adhesive composition (II)

By copolymerizing 99 parts by mass of butyl acrylate and 1 part by mass of acrylic acid, an acrylic copolymer having a weight average molecular weight of 600,000 was obtained.

Next, 100 parts by mass of the obtained acrylic copolymer and 120 parts by mass of dineopentitol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd., product name "KAYARAD DPHA), which is an energy ray curable compound, were used as photopolymerization agents. 3 parts by mass of α -hydroxycyclohexyl phenyl ketone (manufactured by BASF, product name "IRGACURE184") as a starting agent, trimethylolpropane modified toluene diisocyanate (manufactured by TOSOH, product name "CORONATE L") 17 parts by mass are mixed in a solvent to obtain a coating solution of the adhesive composition (II).

(3) Manufacturing of plates for semiconductor processing

Except for using the ethylene-methacrylic acid copolymer produced as described above as the base material and the adhesive composition (II), the semiconductor processing sheet was produced in the same manner as in Example 1.

[Example 3]

(1) Manufacturing of base material

As the substrate, an ethylene-vinyl acetate copolymer film was produced using a T-die film forming method. The arithmetic average roughness Ra of the first side of this ethylene-vinyl acetate copolymer film is 0.06μm, and the tensile elastic modulus (Younger's modulus) at 23°C in the MD direction measured in accordance with JIS K7161: 1994 is 75 MPa, The thickness is 100 μm.

In addition, for the above-mentioned substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for stealth cutting (wavelength: 1600nm), and the transmittance of infrared rays for inspection (wavelength: 1069nm) were evaluated. Sex, either All cases showed excellent transmittance.

(2) Preparation of adhesive composition (III)

40 parts by mass of 2-ethylhexyl acrylate, 40 parts by mass of vinyl acetate, and 20 parts by mass of 2-hydroxyethyl acrylate were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 420,000.

Next, by reacting 100 parts by mass of the obtained acrylic copolymer and 30.2 parts by mass of 2-methacryloxyethyl isocyanate (MOI) as an energy-ray curable group-containing compound, the energy is obtained An energy ray-curable polymer in which a linear curable group (methacryloyl group) is introduced into the side chain.

100 parts by mass of the obtained acrylic copolymer, 3 parts by mass of α -hydroxycyclohexyl phenyl ketone (manufactured by BASF Corporation, product name "IRGACURE 184") as a photopolymerization initiator, and trimethylol as a crosslinking agent 1.1 parts by mass of methyl propane-modified toluene diisocyanate (manufactured by TOSOH, product name "CORONATE L") was mixed in a solvent to obtain a coating solution of adhesive composition (III).

(3) Manufacturing of plates for semiconductor processing

Except that the ethylene-vinyl acetate copolymer produced as described above was used as the base material of the material and the adhesive composition (III), the semiconductor processing sheet was produced in the same manner as in Example 1.

[Example 4]

(1) Manufacturing of base material

A polypropylene film is produced as a base material by the T-die film forming method. The arithmetic average roughness Ra of the first surface of the polypropylene film is 0.3 μm, and the tensile modulus of elasticity (Younger modulus) in the MD direction at 23° C. measured in accordance with JIS K7161: 1994 is 360 MPa, and the thickness is 100 μm.

In addition, for the above-mentioned substrate alone, the transmittance of laser light for printing (wavelength: 532nm), the transmittance of laser light for stealth cutting (wavelength: 1600nm), and the transmittance of infrared rays for inspection (wavelength: 1069nm) were evaluated. In the case of performance, both cases show excellent transmittance.

(2) Manufacturing of plates for semiconductor processing

Except that the polypropylene produced as described above was used as the base material and the adhesive composition (II) produced in Example 2, the semiconductor processing sheet was produced in the same manner as in Example 1.

[Example 5]

(1) Manufacturing of release film

One side (first side) of the polyethylene terephthalate film is peeled off with a silicone-based release agent (manufactured by LINTEC, product name "SP-PET381031", thickness: 38μm). On one side (the second side), an alkyd release agent was used for peeling treatment. As this alkyd release agent, an alkyd release agent is used to form an alkyd release agent layer on a release film (manufactured by LINTEC, product name "SP-PET38AL-5"), where the release film has a thickness A 38μm polyethylene terephthalate film has an alkyd release agent layer on one side. Thereby, a peeling film in which the first side was peeled off with a silicone release agent and the second side was peeled off by an alkyd release agent was obtained. The arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.03 μm.

(2) Manufacturing of plates for semiconductor processing

In addition to using the release film made as described above, the first side is peeled off by a silicone release agent and the second side is peeled off by an alkyd release agent. Except for the above, in the same manner as in Example 1, a sheet for semiconductor processing was produced.

[Example 6]

It was produced in the same manner as in Example 2, except that the first side was peeled off with a silicone release agent and the second side was peeled off with an alkyd release agent. Plates for semiconductor processing.

[Example 7]

(1) Manufacturing of release film

One side (first side) of the polyethylene terephthalate film is peeled off with a silicone-based release agent (manufactured by IINTEC, product name "SP-PET382150", thickness: 38μm). On one side (the second side), the same alkyd release agent used in Example 6 was used for peeling treatment. Thereby, a peeling film in which the first side was peeled off with a silicone release agent and the second side was peeled off by an alkyd release agent was obtained. The arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.03 μm.

(2) Manufacturing of plates for semiconductor processing

The semiconductor process was produced in the same manner as in Example 2 except that the first side produced above was peeled off with a silicone release agent and the second side was peeled off with an alkyd release agent. Use plates.

[Example 8]

(1) Preparation of peeling film

As the release film, a release film (manufactured by LINTEC Corporation, product name "SP-PE1301031", Thickness: 30μm). The arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.3 μm.

(2) Preparation of adhesive composition (IV)

80 parts by mass of butyl acrylate and 20 parts by mass of 2-hydroxyethyl acrylate were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 700,000.

Next, by reacting 100 parts by mass of the obtained acrylic copolymer and 30.2 parts by mass of 2-methacryloxyethyl isocyanate (MOI) as an energy-ray curable group-containing compound, the energy is obtained An energy ray-curable polymer in which a linear curable group (methacryloyl group) is introduced into the side chain.

100 parts by mass of the obtained acrylic copolymer, 3 parts by mass of α -hydroxycyclohexyl phenyl ketone (manufactured by BASF Corporation, product name "IRGACURE 184") as a photopolymerization initiator, and trimethylol as a crosslinking agent 0.5 mass of methyl propane-modified toluene diisocyanate (manufactured by TOSOH, product name "CORONATE L") was mixed in a solvent to obtain a coating solution of adhesive composition (IV).

(3) Manufacturing of plates for semiconductor processing

A semiconductor processing sheet was manufactured in the same manner as in Example 2 except that the release film and adhesive composition (IV) with a thickness of 30 μm manufactured as described above were used.

[Example 9]

Preparation of peeling film

As the release film, a release film (manufactured by LINTEC Corporation, product name "SP-PE1301031", Thickness: 50μm). The arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the second surface was 0.3 μm.

(2) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 8, except that the release film having a thickness of 50 μm produced as described above was used.

[Example 10]

(1) Manufacturing of the first laminate including the adhesive layer

After mixing the following acrylic polymer, thermosetting resin, filler, silane coupling agent and crosslinking agent to obtain an adhesive composition, dilute it with methyl ethyl ketone so that the solid content concentration becomes 20% by mass to prepare the adhesive The coating solution of the agent composition.

Acrylic polymer: 100 parts by mass of copolymer (Mw: 500,000, Mw/Mn: 2.9, Tg: 9°C) composed of 95 parts by mass of methyl acrylate and 5 parts by mass of 2-hydroxyethyl acrylate

Thermosetting resin: Acrylic base plus cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name "CNA-147") 30 parts by mass

Thermosetting agent: 6 parts by mass of aralkylphenol resin (manufactured by Mitsui Chemicals, product name "Milex XLC-4L")

Filler: methacryloxy-modified silica filler (average particle size 0.05μm, manufactured by ADMATECHS, 3-methacryloxypropyltrimethoxysilane treated product) 35 parts by mass

Silane coupling agent: (manufactured by Mitsubishi Chemical Corporation, product name "MKC SILICATE MSEP 2") 0.5 parts by mass

Crosslinking agent: 1.5 parts by mass of aromatic polyisocyanate (manufactured by TOSOH, product name "CORONATE L")

Prepared on one side of a polyethylene terephthalate (PET) film The first release film (manufactured by LINTEC, product name "SP-PET381031", thickness: 38μm) formed by a silicone release agent layer, and a silicone release agent layer formed on one side of the PET film. Cheng's second release film (manufactured by LINTEC, product name "SP-PET381130", thickness: 38 μm).

Next, the coating solution of the aforementioned adhesive composition was coated on the release surface of the first release film using a knife coater and dried to form an adhesive layer with a thickness of 5 μm on the release surface of the first release film . Subsequently, the release surface of the second release film was superimposed on the adhesive layer and the two were bonded together to obtain a first build-up layer composed of the first release film, the adhesive layer (thickness: 5 μm), and the second release film body. Subsequently, this first layered body was aged for 7 days in an environment with a temperature of 23° C. and a relative humidity of 50%.

(2) Manufacturing of the second laminate including the adhesive layer

After mixing the following adhesive main agent and crosslinking agent to obtain adhesive composition (V), it is diluted with methyl ethyl ketone so that the solid content concentration becomes 25% by mass to prepare the coating of adhesive composition (V) Cloth solution.

Adhesive main agent: (meth)acrylate copolymer (manufactured by Nippon Synthetic Chemical Industry Co., Ltd., 60 parts by mass of 2-ethylhexyl acrylate, 30 parts by mass of methyl methacrylate, and 10 parts by mass of 2-hydroxyethyl acrylate Copolymer obtained by polymerization, weight average molecular weight: 600,000) 100 parts by mass

Crosslinking agent: Xylene diisocyanate adduct of trimethylolpropane (manufactured by Mitsui Takeda CHEMICAL, product name "TAKENATE D11ON") 20 parts by mass

As the third release film, a release film prepared by forming a silicone release agent layer on one side of a PET film (manufactured by LINTEC, product name "SP-PET381031", thickness: 38μm).

In addition, a polypropylene film was used as the base material. In this polypropylene film, the arithmetic mean roughness Ra of the first surface is 0.3 μm, and the thickness is 100 μm.

Next, the coating solution of the aforementioned adhesive composition (V) was coated on the release surface of the third release film using a knife coater and dried, and at the same time it was crosslinked to obtain a third release film , A laminate composed of an adhesive layer with a thickness of 5μm. Subsequently, the second surface of the above-mentioned substrate was bonded to the surface of the adhesive layer on the opposite side to the third release film to obtain a second laminate composed of the substrate, the adhesive layer, and the third release film. They were aged for 7 days in an environment with a temperature of 23°C and a relative humidity of 50%.

(3) Manufacturing of the third laminate including the adhesive layer for jigs

After mixing the following components of the main adhesive and crosslinking agent to obtain an adhesive composition for jigs, it is diluted with toluene so that the solid content becomes 15% by mass to prepare a coating solution of the adhesive composition for jigs .

Adhesive main agent: (meth)acrylate copolymer (copolymer obtained by copolymerizing 69.5 parts by mass of butyl acrylate, 30 parts by mass of methyl acrylate and 0.5 part by mass of 2-hydroxyethyl acrylate, weight average molecular weight: 500,000 ) 100 parts by mass

Crosslinking agent: 5 parts by mass of aromatic polyisocyanate (manufactured by TOSOH, product name "CORONATE L")

Prepare the fourth and fifth release films (manufactured by LINTEC Co., Ltd., product name "SP-PET381031", thickness: 38μm) by forming a silicone release agent layer on one side of the PET film, and polychloride as the core material Vinyl film (manufactured by Okamoto Co., Ltd., thickness: 50 μm).

Next, the coating solution of the adhesive composition for jigs described above was coated on the release surface of the fourth release film using a knife coater and dried to form a thickness of 5 μm on the release surface of the fourth release film. The first adhesive layer. Subsequently, the above-mentioned core material was bonded to the first adhesive layer to obtain a laminate A composed of the core material, the first adhesive layer, and the fourth release film.

Next, the coating solution of the aforementioned adhesive composition for jigs was coated on the peeling surface of the fifth release film using a knife coater and dried to form a thickness of 5 μm on the peeling surface of the fifth release film The second adhesive layer. Subsequently, the exposed surface of the core material of the laminate A was bonded to the second adhesive layer to obtain a fourth release film/first adhesive layer/core material/second adhesive layer/fifth release film The third layered body constituted. Subsequently, this third layered body was aged for 7 days in an environment with a temperature of 23° C. and a relative humidity of 50%. In this third laminate, a first adhesive layer, a core material, and a second adhesive layer constitute an adhesive layer for jigs with a thickness of 60 μm.

(4) Manufacturing of the fourth laminate

The second release film is peeled from the first laminate obtained in (1) above, and the adhesive layer is exposed. On the other hand, the third release film was peeled from the second laminate obtained in (2) above, and the adhesive layer was exposed. The first layered body and the second layered body are bonded to the adhesive layer in such a way that the adhesive layer is in contact with each other to obtain a first layer of the substrate, the adhesive layer, the adhesive layer, and the first release film. 4Layered body.

(5) Manufacturing of plates for semiconductor processing

The fifth release film is peeled from the third laminate obtained in (3) above, and the fourth release film remains, and the inner peripheral edge of the adhesive layer for jigs is cut from the second adhesive layer side, and the inner side The round part is removed. At this time, the adhesive layer for the jig The diameter of the inner periphery is set to 230mm.

The first release film is peeled from the fourth laminate obtained in (4) above, and the exposed adhesive layer and the jig adhesive exposed on the third laminate are laminated and pressure-bonded. Subsequently, the fourth release film on the third laminate was left, and the outer peripheral edge portion of the semiconductor processing sheet was cut from the substrate side, and the outer portion was removed. At this time, the diameter of the outer periphery of the semiconductor processing plate is set to 270 mm.

In this way, an adhesive layer (thickness: 5μm) on the substrate, laminated on the opposite side of the adhesive layer to the substrate, and the adhesive layer on the opposite side of the adhesive layer is obtained. A semiconductor processing board composed of a ring-shaped jig adhesive layer laminated on the peripheral edge of the side, and a fourth release film laminated on the opposite side of the jig adhesive layer and the adhesive layer piece. In addition, the arithmetic average roughness Ra of the surface (first surface) on the side of the adhesive layer for jig of the fourth release film is 0.03μm, and the arithmetic average of the surface (second surface) on the opposite side to this first surface The roughness Ra is 0.3 μm.

[Example 11]

(1) Manufacturing of the first laminate including the protective film forming layer

After mixing the following binder polymers, thermosetting resins, thermally active latent epoxy resin curing agents, curing accelerators, fillers, colorants, and silane coupling agents to obtain the protective film forming layer composition, the solid content concentration To make it 50% by mass, it was diluted with methyl ethyl ketone to prepare a coating solution of the protective film forming layer composition.

Binder polymer: (meth)acrylate copolymer (10 parts by mass of n-butyl acrylate, 70 parts by mass of methyl acrylate, 5 parts by mass of glycidyl methacrylate Parts, and 15 parts by mass of 2-hydroxyethyl acrylate copolymer, weight average molecular weight: 800,000, glass transition temperature: -1°C) 150 parts by mass

Thermosetting ingredients:

Bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER828", epoxy equivalent 184~194g/eq) 60 parts by mass

Bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1055", epoxy equivalent 800 to 900 g/eq) 10 parts by mass

Dicyclopentadiene epoxy resin (manufactured by Dainippon Ink Chemical Industry Co., Ltd., product name "Epiclon HP-7200HH", epoxy equivalent 255~260g/eq) 30 parts by mass

Thermally active latent epoxy resin hardener: 2 parts by mass of cyanoguanidine (manufactured by ADEKA, product name "ADEKA HARDENER-EH3636AS", active hydrogen amount 21g/eq)

Hardening accelerator: 2 parts by mass of 2-phenyl-4,5-dimethylolimidazole (manufactured by Shikoku Chemical Industry Co., Ltd., product name "CUREZOLE 2PHZ")

Filler: Silica filler (manufactured by ADMATECHS, product name "SC2050MA", average particle size: 0.5μm) 320 parts by mass

Coloring agent: carbon black (manufactured by Mitsubishi Chemical Corporation, product name "#MA650", average particle size: 28nm) 1.2 parts by mass

Silane coupling agent: (manufactured by Shin-Etsu Chemical Co., Ltd., product name "KBM-403") 2 parts by mass

Prepare the first release film (manufactured by LINTEC Corporation, product name "SP-PET381031", thickness: 38μm) in which a silicone release agent layer is formed on one side of a polyethylene terephthalate (PET) film, And a second release film (manufactured by LINTEC Co., Ltd., Product name "SP-PET381130", thickness: 38μm).

First, the coating solution of the aforementioned protective film forming layer composition was coated on the release surface of the first release film using a knife coater and dried to form a thickness of 25 μm on the release surface of the first release film. The protective film forms the layer. Subsequently, the release surface of the second release film was overlapped on the protective film forming layer and the two were bonded together to obtain the first release film, the protective film forming layer (thickness: 25 μm), and the second release film. 1Layered body. The first layered body was aged for 7 days in an environment with a temperature of 23° C. and a relative humidity of 50%.

(2) Manufacturing of plates for semiconductor processing

Except for using the first laminated body manufactured as described above, a plate for semiconductor processing was manufactured in the same manner as in Example 10.

[Example 12]

(1) Preparation of adhesive composition (VI)

68.5 parts by mass of butyl acrylate, 30 parts by mass of methacrylic acid, 0.5 parts by mass of 2-hydroxyethyl acrylate, and 1 part by mass of acrylamide were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 620,000.

Next, 100 parts by mass of the obtained acrylic copolymer and 10 parts by mass of trimethylolpropane-modified toluene diisocyanate (manufactured by TOSOH, product name "CORONATE L") as a crosslinking agent are mixed in a solvent, and A coating solution of the adhesive composition (VI) was obtained.

(2) Manufacturing of plates for semiconductor processing

Except for using the adhesive composition (VI) manufactured as described above, a sheet for semiconductor processing was manufactured in the same manner as in Example 1.

[Comparative Example 1]

Except that a release film (manufactured by LINTEC, product name "SP-PET381031", thickness: 38μm) was used as the release film, a semiconductor processing sheet was produced in the same manner as in Example 1. The release film was made of polysilicone The release agent is obtained by peeling one side (first side) of a polyethylene terephthalate film. In addition, the arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the other surface (second surface) was 0.05 μm.

[Comparative Example 2]

Except that a release film (manufactured by LINTEC, product name "SP-PET381031", thickness: 38μm) was used as the release film, a semiconductor processing sheet was produced in the same manner as in Example 3. The release film was made of polysilicone The release agent is obtained by peeling one side (first side) of a polyethylene terephthalate film. In addition, the arithmetic average roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic average roughness Ra of the other surface (second surface) was 0.05 μm.

[Comparative Example 3]

It is the same as Example 2 except that a peeling film made of polyethylene terephthalate film (manufactured by Mitsubishi Plastics Corporation, product name "Diafoil (registered trademark) T-10038", thickness: 38μm) is used as the peeling film Ground manufacturing of plates for semiconductor processing. In addition, the arithmetic average roughness Ra of both sides of the release film was both 0.05 μm.

[Test Example 1]

(Measurement of peeling force α)

The semiconductor processing plates manufactured in the Examples and Comparative Examples were cut into a width of 50 mm × a length of 100 mm. At this time, it is cut so that the flow direction (MD direction) of the sheet for semiconductor processing at the time of manufacture becomes the longitudinal direction. The semiconductor processing sheet cut in this way is laminated with 10 sheets with the base material as the upper side. The laminated body was clamped from above and below using glass plates of 75 mm × length 15 mm × thickness 5 mm. Then, with a weight of 500 g placed on the upper glass plate, it was stored for 3 days in a humid heat accelerator (manufactured by ESPEC Corporation, product name "SH641") set in a dry state at 40°C. In addition, when the sheet for semiconductor processing contains an energy ray-curable material, it is stored in a state where the laminated body is shielded from light.

After the storage is completed, the two conductor processing plates, which are the outermost semiconductor processing plate and the semiconductor processing plate adjacent to the laminate, are set as a measurement sample in a superimposed state And separate. Next, the peeling film located on the outermost layer of the measurement sample was peeled off, and the exposed adhesive surface was attached to a stainless steel plate using double-sided adhesive tape and fixed to a universal tensile testing machine (manufactured by ORIENTEC, product name: TENSILON UTM-4-100). Subsequently, under the conditions of a temperature of 23°C and a relative humidity of 50% RH, the stainless steel plate is placed at the farthest semiconductor processing plate from the semiconductor processing plate overlapping it at a stretching speed of 300 mm/min at 180 ° Peel off in the direction. That is, it is peeled between the 1st surface of a base material and the 2nd surface of a peeling film. The force at this time was measured and set as the peeling force α (mN/50mm). The results are shown in Table 2. In addition, when the peeling force α is so small that it cannot be measured, or the peeling film has been peeled from the substrate before the measurement, the measurement result is set as "unmeasurable (0)".

[Test Example 2]

(Measurement of peel force β)

A laminate composed of 10 plates for semiconductor processing was produced in the same manner as in Test Example 1, and was stored at 40°C for 3 days. One sheet of semiconductor processing plate was taken out of the laminate, and the first side of the substrate was bonded to the stainless steel plate with double-sided adhesive tape and fixed to a universal tensile testing machine (manufactured by ORIENTEC, product name: TENSILON UTM-4 -100). Subsequently, under the conditions of a temperature of 23° C. and a relative humidity of 50 RH, only the peeling film was peeled in the 180° direction at a stretching speed of 300 mm/min. That is, it is peeled between the 1st surface of a peeling film and the 2nd surface of an adhesive agent. The force at this time was measured and set as the peeling force β (mN/50mm). The results are shown in Table 2. Then, based on this peeling force β and the peeling force α measured in Test Example 1, the value of the ratio of the peeling force α to the peeling force β (α / β ) was calculated. At this time, when the measurement result of the peeling force α is "unmeasurable (0)", the value of the ratio ( α / β ) is set to "0". The results are shown in Table 2.

[Test Example 3]

(Evaluation from rolls)

The semiconductor processing plates manufactured in the Examples and Comparative Examples were prepared as long plates having a width of 290 mm. Then, deep engraving is performed from the substrate side to form a circular main use part and a remaining part of the plate as shown in Figure 9. At this time, only the layers other than the release film were cut (half-cut), and the diameter of the main use part was set to 270 mm. Subsequently, the base material and the adhesive layer (the adhesive layer or the protective film forming layer in the case where they exist) other than the main use part and the remaining part of the sheet are removed. In this way, 100 plates for semiconductor processing with main use parts were obtained. This sheet for semiconductor processing is wound up so that the base material side becomes the outer side, and becomes a roll shape.

The thus obtained roll-shaped semiconductor processing sheet was stored for 3 days in a humid heat accelerator (manufactured by ESPEC Corporation, product name "SH641") set in a dry state at 40°C. In addition, when the sheet for semiconductor processing contains an energy ray-curable material, it is stored in a state where the laminated body is shielded from light.

After the storage is completed, use a wafer bonding machine (manufactured by LINTEC, product name "RAD-2500m/8") to unwind the semiconductor processing sheet that has been wound into a roll shape. Then, for the area where there are 20 pieces of the main use portion at the both ends of the longitudinal direction of the semiconductor processing sheet (that is, the area where the main use portion 20 pieces are present on the outer part of the roll, and the area In the inner part, there is an area of 20 pieces of the main use part), and confirm whether it can be rolled out well. At this time, when the weight of 20 sheets of the main use portion could be continuously and well rolled out in any area, it was rated as ○. On the other hand, if the second surface of the release film and the main use part overlapping underneath were close to each other and could not be rolled out, it was evaluated as × even if one sheet was produced. The results are shown in Table 2.

[Test Example 4]

(Fit evaluation)

A roll-shaped semiconductor processing sheet was manufactured in the same manner as in Test Example 3, and it was stored at 40°C for 3 days. Subsequently, a wafer bonding machine (manufactured by LINTEC, product name "RAD-2500m/8") was used to peel the main use part from the release film of the roll, and the main use part was attached (bonded) to the semiconductor Wafer. When this operation was continued and repeated 20 times and completed well, it was rated as ○. On the other hand, when poor adhesion occurred due to poor peeling of the main use portion from the release film, etc., it was rated as x. The results are shown in Table 2.

Table 1 summarizes the structures of the semiconductor processing plates manufactured in the examples and comparative examples. In addition, the details of the abbreviations described in Table 1 are as follows.

[Substrate]

. PVC: polyvinyl chloride

. EMAA: ethylene-methacrylic acid copolymer

. EVA: ethylene-vinyl acetate copolymer

. PP: Polypropylene

[Peeling film]

. PET: Polyethylene terephthalate

[Test Example 5]

(Evaluation of light transmittance)

Using a wafer bonding machine (manufactured by LINTEC, product name "RAD-2500m/8"), the semiconductor processing plate and ring frame after storage for 3 days in Test Example 3 were attached to a silicon crystal with a thickness of 350 μm The mirror of the circle. Subsequently, using a dicing device (manufactured by DISCO, product name "DFD-651"), the silicon wafer was diced under the following conditions.

Cutting conditions:

. Workpiece (cutting object): silicon wafer (size: 6 inches, thickness: 350 μm, attachment surface: mirror surface)

. Cutting blade: manufactured by DISCO, product name 127HECC"

. Blade revolutions: 30,000rpm

. Cutting speed: 10mm/sec

. Incision depth: the incision from the substrate opposite to the cutting device table to a depth of 20μm

. Cutting size: 5mm×5mm

Regarding the wafer attached to the semiconductor processing sheet obtained by the above-mentioned dicing, from the side of the semiconductor processing sheet opposite to the wafer (the second surface of the base material), the semiconductor processing sheet is visually inspected Check whether the peripheral edges and corners of the wafer can be recognized by the plate. Also, for use with adhesive layer For semiconductor processing wafers, confirm the periphery and corners of wafers with adhesives; for semiconductor processing wafers with protective film formation layers, confirm the wafers with protective films. Peripheral and corners. Those who were able to confirm the peripheral edge and the corners were rated as good (○) for light transmittance (visible light transmittance), and those who could not be determined were rated as poor (x) for light transmittance (visible light transmittance). The results are shown in Table 2.

As can be understood from Table 2, the semiconductor processing sheet of the example has excellent light transmittance, and can be evaluated excellently in both rolling out from the roll and bonding. On the other hand, in the sheet for semiconductor processing of the comparative example, any of the unwinding from the roll and the bonding produced defects.

Industrial availability

The semiconductor processing sheet of the present invention can be suitably used as a dicing sheet or dicing, for example. Die bonding sheet, protective film forming layer integrated dicing sheet, etc. Generally according to the present invention,

1‧‧‧Plates for semiconductor processing

10‧‧‧Substrate

101‧‧‧Side 1

102‧‧‧Side 2

30‧‧‧Peeling film

80‧‧‧Semiconductor attachment layer

301‧‧‧Side 1

302‧‧‧Side 2

801‧‧‧Side 1

802‧‧‧Side 2

Claims (9)

A plate for semiconductor processing, which is provided with at least the following semiconductor processing plates: a substrate having a first surface and a second surface located on the opposite side of the first surface; a semiconductor attachment layer, which is covered by Laminated on the second surface side of the substrate, with a first surface on the proximal side of the substrate, and a second surface on the distal side of the substrate; an adhesive layer for jigs, which is laminated on The second surface side of the aforementioned semiconductor attachment layer has a first surface on the proximal side of the semiconductor attachment layer and a second surface on the distal side of the semiconductor attachment layer; and a release film, which is at least layered It is deposited on the second surface side of the adhesive layer for jigs, has a first surface on the proximal side of the adhesive layer for jigs, and has a second surface on the distal side of the adhesive layer for jigs; It is characterized in that the arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm, and the first surface of the substrate and the second surface of the release film are laminated and stored at 40°C for 3 days The peeling force at the interface between the first surface of the substrate and the second surface of the peeling film is set to α , and the second surface of the adhesive layer for jigs and the first surface of the peeling film are attached and When the peeling force at the interface between the second surface of the adhesive layer for jigs and the first surface of the peeling film after storage at 40°C for 3 days is set to β , the value of the ratio of α to β (α/β) If it is 0 or more and less than 1.0, the aforementioned peeling force β is 10 to 1000 mN/50 mm. The semiconductor processing plate described in the first item of the scope of patent application, wherein the arithmetic average roughness Ra of the second surface of the release film is 0.02~0.8μm. The semiconductor processing sheet described in the first item of the scope of patent application, wherein the release film is provided on each of the first surface side and the second surface side of the release film Release agent layer. The semiconductor processing board described in the first item of the scope of patent application, wherein the aforementioned semiconductor attachment layer is an adhesive layer. The semiconductor processing board described in the first item of the scope of patent application, wherein the aforementioned semiconductor attachment layer is an adhesive layer. The semiconductor processing board described in the first item of the scope of patent application, wherein the aforementioned semiconductor attachment layer is a protective film forming layer. The semiconductor processing board described in the first item of the patent application, wherein the semiconductor attachment layer is composed of an adhesive layer and an adhesive layer located between the adhesive layer and the release film. The semiconductor processing board described in the first item of the patent application, wherein the semiconductor attachment layer is composed of an adhesive layer and a protective film forming layer located between the adhesive layer and the release film. The semiconductor processing sheet described in the first item of the scope of the patent application, wherein the semiconductor processing sheet is formed by laminating a long strip of the peeling film laminated body, and the laminated body has the same shape as the peeling film when viewed from above. It has different shapes and includes the aforementioned substrate and the aforementioned semiconductor attachment layer.

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