CN108271381A - Sheet for processing semiconductor - Google Patents

Sheet for processing semiconductor Download PDF

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Publication number
CN108271381A
CN108271381A CN201780003864.0A CN201780003864A CN108271381A CN 108271381 A CN108271381 A CN 108271381A CN 201780003864 A CN201780003864 A CN 201780003864A CN 108271381 A CN108271381 A CN 108271381A
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CN
China
Prior art keywords
face
semiconductor
sheet
layer
base material
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Granted
Application number
CN201780003864.0A
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CN108271381B (en
Inventor
佐藤明德
中村优智
山下茂之
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Lintec Corp
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Lintec Corp
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Publication of CN108271381A publication Critical patent/CN108271381A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Abstract

The present invention provides a kind of sheet for processing semiconductor 1, it at least has base material 10, semiconductor associated layer 80 and stripping film 30, the arithmetic average roughness Ra in the first face 101 of base material 10 is 0.01~0.8 μm, peeling force on interface of first face 101 of base material 10 with the second face 302 of stripping film 30 is being set as α, it and will be when the peeling force on interface of the second face 802 of semiconductor associated layer 80 with the first face 301 of stripping film 30 be set as β, for ratios (α/β) of the α than β for 0 less than 1.0, peeling force β is 10~1000mN/50mm.The sheet for processing semiconductor 1 with excellent light it is radioparent simultaneously, adhesion is less likely to occur.

Description

Sheet for processing semiconductor
Technical field
The present invention relates to a kind of sheet for processing semiconductor.
Background technology
When manufacturing semiconductor wafer by semiconductor crystal wafer, add usually using the semiconductor of such as cutting sheet, grinding back surface piece Work piece.In recent years, such sheet for processing semiconductor is required there is transmittance (below sometimes to the light of required wavelength Referred to as " light transmittance ").
Such as in recent years, thickness ratio wanted the use of thin Silicon Wafer or glass system wafer being continuously increased in the past.It is using When blade cuts these wafers, the chip defect of such as chipping, wafer breakage is easily generated.Therefore, when using these wafers, After the completion of cutting, in a state that chip is attached on sheet for processing semiconductor, connect from chip and sheet for processing semiconductor It crosses sheet for processing semiconductor and checks the shape of chip in tactile face.In order to carry out the inspection, sheet for processing semiconductor well The light for inspection must be transmitted.
In addition, when carrying out the slice of wafer of thinner thickness, there is chipping etc. when carrying out and cutting entirely due to the use of blade Worry, therefore, sometimes using the first patterning method that first will carry out back side grinding after wafer hemisect again；Or it uses and is existed using laser After inside wafer setting modification layer, then carry out back side grinding and the stealthy of wafer slice is cut into (stealth dicing) method.
When carrying out stealthy cutting, semiconductor machining is being attached to after inside wafer forms modification layer by irradiating laser During on piece, due to attaching pressure and there are the risks of wafer breakage.In order to avoid this risk, wafer is attached to half in advance After conductor processing on piece, cross sheet for processing semiconductor and laser is irradiated to wafer, so as to form modification layer.At this point, in order to Laser is irradiated well, and sheet for processing semiconductor must transmission laser.
When further, with upside-down method of hull-section construction encapsulated wafer, usually by the laser letterings such as product face, batch number chip the back of the body Face.In order to carry out such laser lettering, it is provided with the work that the wafer for completing back side grinding is carried to laser printing device Sequence.In recent years used thinned wafer, the risk that wafer rupture is generated when carrying are higher.In order to avoid this risk, grind Study carefully and carry thinned wafer, and cross sheet for processing semiconductor with the state being attached on sheet for processing semiconductor Laser is irradiated, so as to carry out lettering.In order to carry out the laser lettering well, sheet for processing semiconductor must transmission laser.
In addition, when setting protective film at the back side of chip, can also laser lettering be carried out to the protective film.It is at this point, more more than half Base material, the adhering agent layer of conductor processing piece, to including the protective film forming layer of the cambial sheet for processing semiconductor of protective film Laser is irradiated, so as to carry out lettering.At this point, in order to carry out laser lettering, base material, the sticker of sheet for processing semiconductor well Layers etc. also must transmission laser.
Sheet for processing semiconductor is generally configured with base material and the adhering agent layer being layered on a face of the base material.Further, For the purpose of adhering agent layer is protected in a period of using until sheet for processing semiconductor, can be set on the adhering agent layer Stripping film.For example, a kind of semiconductor for stacking gradually base material, adhering agent layer and stripping film and forming is recorded in patent document 1 and 2 Processing piece.In addition, generally according to the purposes of sheet for processing semiconductor, set such as between adhering agent layer and stripping film sometimes Other layers of adhesion agent layer, protective film forming layer etc..
Existing technical literature
Patent document
Patent document 1：Japanese Patent Publication 8-1220
Patent document 2：Japanese Patent Publication 2-146144
Invention content
The technical problem to be solved in the present invention
Sheet for processing semiconductor to having the excellent light transmittance of the light of required wavelength, can be by carrying respectively High base material, adhering agent layer light transmittance reach.It for example, can be by improving the substrate side of sheet for processing semiconductor Face, i.e. base material are reached with flatness of the adhering agent layer for the face of opposite side.
But if there is the radioparent sheet for processing semiconductor of high light line in order to obtain and improve sheet for processing semiconductor The flatness in the face of substrate side, then easily stick together.That is, when batching the sheet for processing semiconductor of strip for web-like, half Conductor processing piece easy adherence each other.If occur as adherence, be difficult to unreel sheet for processing semiconductor from volume or It is peeling-off on undesirable interface (for example, interface of adhering agent layer and stripping film).In addition, by base material and adhering agent layer Coordinate the shape of wafer and in the sheet for processing semiconductor that precut, if adhesion as generation, by semiconductor When processing is unreeled with piece from volume, it may occur that the laminated body of base material and adhering agent layer removed from stripping film or the stripping after The substrate side of laminated body is attached to the undesirable condition at the stripping film back side etc..
Here, it is disclosed in patent document 1 and 2：Stripping film and face implementation embossing of the adhering agent layer for opposite side are added Work during its object is to batch sheet for processing semiconductor for web-like, avoids sandwiching air between sheet for processing semiconductor.
On the other hand, the sheet for processing semiconductor disclosed in patent document 1 or 2 does not have high smooth on the face of substrate side Property, it can not be used in as described above through the inspection of sheet for processing semiconductor, laser cutting, stealthy cutting, laser lettering etc..
The present invention be in view of above-mentioned practical situation and carry out, its purpose is to provide a kind of saturating with excellent light While penetrating property, it is not easy to the sheet for processing semiconductor to stick together.
Solve the technological means of technical problem
In order to achieve the above objectives, first, the present invention provides a kind of sheet for processing semiconductor, at least has：Base material, With the first face and positioned at first face be opposite side the second face；Semiconductor associated layer is laminated in the base material The second surface side, and close to the base material side have the first face, far from the base material side have the second face；And Stripping film is laminated in the second surface side of the semiconductor associated layer, and has close to the side of the semiconductor associated layer There is the first face, there is the second face in the side far from the semiconductor associated layer；It is characterized in that：First face of the base material Arithmetic average roughness Ra is 0.01~0.8 μm, is laminated by the second face in the first face of the base material and the stripping film And after being taken care of 3 days at 40 DEG C, peeling force on the interface in the second face in the first face of the base material Yu the stripping film It is provided as α, and first face paste in the second face of the semiconductor associated layer and the stripping film is attached and take care of at 40 DEG C 3 When peeling force on the interface in the first face after it, in the second face of the semiconductor associated layer Yu the stripping film is provided as β, For ratios (α/β) of the α than β for 0 less than 1.0, the peeling force β is 10~1000mN/50mm (invention 1).
According to foregoing invention (invention 1), by the way that the arithmetic average roughness Ra in the first face of base material is made to be 0.01~0.8 μ M, the flatness in the face of substrate side become good, and base material has high light line transmittance to the light of required wavelength.Further, lead to The ratio (α/β) that makes peeling force α than peeling force β is crossed as 0 less than 1.0, is batched as the semiconductor in the state of after web-like Processing is not above the adherence between each layer of composition sheet for processing semiconductor with the adherence between piece, excellent so as to play Resistance to blocking.Thereby, it is possible to be unreeled well, and will not be peeling-off on undesirable interface when unreeling.This Outside, it since peeling force β is 10~1000mN/50mm, when using sheet for processing semiconductor, can will be wrapped with appropriate peeling force Laminated body containing base material and semiconductor associated layer is removed from stripping film.
In foregoing invention (invention 1), the arithmetic average roughness Ra in the second face of the stripping film, preferably 0.02~ 0.8 μm (invention 2).
In foregoing invention (invention 1,2), preferably described stripping film has stripping respectively in its first surface side and the second surface side From oxidant layer (invention 3).
In foregoing invention (invention 1~3), the semiconductor associated layer can be adhering agent layer (invention 4).
In foregoing invention (invention 1~3), the semiconductor associated layer can be adhesion agent layer (invention 5).
In foregoing invention (invention 1~3), the semiconductor associated layer can be protective film forming layer (invention 6).
In foregoing invention (invention 1~3), the semiconductor associated layer can be by adhering agent layer and positioned at the sticker Adhesion agent layer between layer and the stripping film is formed (invention 7).
In foregoing invention (invention 1~3), the semiconductor associated layer can be by adhering agent layer and positioned at the sticker Protective film forming layer between layer and the stripping film is formed (invention 8).
In foregoing invention (invention 1~8), the sheet for processing semiconductor can be laminated on the stripping film of strip Laminated body, the laminated body have shape different from the stripping film when overlooking and are attached comprising the base material and the semiconductor Layer (invention 9).
Second, the present invention provides a kind of sheet for processing semiconductor, at least has：Base material has the first face and is located at With the second face that first face is opposite side；Semiconductor associated layer, is laminated in the second surface side of the base material, and by The side of the nearly base material has the first face, has the second face in the side far from the base material；Fixture adhering agent layer, quilt Be layered in the second surface side of the semiconductor associated layer, and close to the side of the semiconductor associated layer have the first face, Side far from the semiconductor associated layer has the second face；And stripping film, at least it is laminated in the fixture sticker Second surface side of layer, and there is the first face close to the side of the fixture adhering agent layer, it adheres far from the fixture The side of oxidant layer has the second face, it is characterised in that：The arithmetic average roughness Ra in the first face of the base material is 0.01~0.8 μm, it is after the second face of the first face of the base material and the stripping film is laminated and is taken care of 3 days at 40 DEG C, in the base Peeling force on the interface in the first face of material and the second face of the stripping film is provided as α, and by the fixture adhering agent layer First face paste of the second face and the stripping film is attached and after being taken care of 3 days at 40 DEG C, the in the fixture adhering agent layer When peeling force on the interface in the first face of two faces and the stripping film is provided as β, ratios (α/β) of the α than β for 0 less than 1.0, the peeling force β are 10~1000mN/50mm (invention 10).
Invention effect
In accordance with the invention it is possible to it provides a kind of radioparent with excellent light while be less likely to occur the half of adhesion Conductor processing piece.
Description of the drawings
Fig. 1 is the sectional view of the sheet for processing semiconductor of the first embodiment of the present invention.
Fig. 2 is that the sheet for processing semiconductor of the first embodiment of the expression present invention is the sectional view of overlap condition.
Fig. 3 is the sectional view of the sheet for processing semiconductor of the first form of the first embodiment of the present invention.
Fig. 4 is the sectional view of the sheet for processing semiconductor of the second form of the first embodiment of the present invention.
Fig. 5 is the sectional view of the sheet for processing semiconductor of the third form of the first embodiment of the present invention.
Fig. 6 is the sectional view of the sheet for processing semiconductor of the 4th form of the first embodiment of the present invention.
Fig. 7 is the vertical view of the sheet for processing semiconductor of the 5th form of the first embodiment of the present invention.
Fig. 8 is the sectional view of the sheet for processing semiconductor of second embodiment of the present invention.
Fig. 9 is the sectional view of the sheet for processing semiconductor of third embodiment of the present invention.
Figure 10 is the sectional view along the line A-A of Fig. 9.
Specific embodiment
Hereinafter, embodiments of the present invention will be described.
The sheet for processing semiconductor 1 of first embodiment is represented in Fig. 1.Sheet for processing semiconductor 1 passes through successively by base material 10th, semiconductor associated layer 80 and stripping film 30 are laminated and form.Base material 10 has the in the side far from semiconductor associated layer 80 On one side 101, there is the second face 102 close to the side of semiconductor associated layer 80.Semiconductor associated layer 80 is close to base material 10 Side has the first face 801, has the second face 802 close to the side of stripping film 30.Stripping film 30 is attached close to semiconductor The side of layer 80 has the first face 301, has the second face 302 in the side far from semiconductor associated layer 80.
In the sheet for processing semiconductor 1 of present embodiment, the arithmetic average roughness Ra in the first face 101 of base material 10 is 0.01~0.8 μm.The first face 101 by making base material 10 is so smooth, can lower the light being radiated on the first face 101 and exist It is scattered on the face, base material 10 can play high light line transmittance.
In addition, in the sheet for processing semiconductor 1 of present embodiment, ratios (α/β) of the peeling force α than peeling force β is more than 0 And less than 1.0.Here, peeling force α refers to, as described later, in the first face 101 of base material 10 and the second face 302 of stripping film 30 Interface on peeling force；Peeling force β refers to, as described later, in the second face 802 and the stripping film 30 of semiconductor associated layer 80 Peeling force on the interface in the first face 301.Sheet for processing semiconductor 1 is batched as in the state of after web-like, semiconductor as a result, Processing is not above the adherence between each layer of composition sheet for processing semiconductor 1 with the adherence between piece 1, excellent so as to play Different resistance to blocking.Therefore, it is possible to be unreeled well, and the stripping on undesirable interface is not occurred at when unreeling From.
Further, in the sheet for processing semiconductor 1 of present embodiment, peeling force β is 10~1000mN/50mm.Exist as a result, During using sheet for processing semiconductor, can with appropriate peeling force by the laminated body comprising base material and semiconductor associated layer from stripping It is removed on film.
1. physical property of sheet for processing semiconductor etc.
It, will be in the first face 101 of base material 10 and the second face of stripping film 30 in the sheet for processing semiconductor 1 of present embodiment Peeling force on 302 interface is provided as α, and will be in the second face 802 of semiconductor associated layer 80 and the first face 301 of stripping film 30 Interface on peeling force when being provided as β, ratios (α/β) of the α than β for more than 0, preferably more than 0.05, particularly preferably 0.1 with On.In addition, the ratio (α/β), less than 1.0, preferably 0.5 hereinafter, particularly preferably less than 0.2.Here, peeling force α refer to by First face 101 of base material 10 and the second face 302 of stripping film 30 be laminated and taken care of 3 days at 40 DEG C in the dry state after, Stripping film 30 is to the peeling force of base material 10.In addition, peeling force β refers to by the second face 802 of semiconductor associated layer 80 and stripping In a state that first face 301 of film 30 attaches, after being taken care of 3 days at 40 DEG C in the dry state, stripping film 30 is to semiconductor The peeling force of associated layer 80.In addition, when above-mentioned ratio (α/β) is 0, the value of peeling force α is 0, it is meant that small arrive of peeling force α can not The state that the degree or stripping film 30 of measure have been removed from base material 10 before the assay.By making peeling force α than peeling force β's Ratio (α/β) is for 0 less than 1.0, as shown in Fig. 2, when sheet for processing semiconductor 1 is overlapped each other, semiconductor machining is used Adherence between piece 1 is not above the adherence between each layer for forming sheet for processing semiconductor.Specifically, base material 10 Adherence between first face 101 and the second face 302 of the stripping film 30 opposite with it is not above base material 10 and is pasted with semiconductor The adherence between adherence and semiconductor associated layer 80 and stripping film 30 between attached layer 80.It plays as a result, excellent anti-stick Lian Xing, when will roll the sheet for processing semiconductor 1 that is laminated for web-like and unreeled, the of the base material 10 of sheet for processing semiconductor 1 302 adherence of the second face of the stripping film 30 of 101 sheet for processing semiconductor 1 that will not be overlapped on one side.Further, it is unreeling When, the stripping on the undesirable interface of sheet for processing semiconductor 1 is able to inhibit.Thereby, it is possible to add semiconductor Work is unreeled well with piece 1.
In addition, in this specification, peeling force β is defined as on stripping film 30 and the interface of main layer being in contact with it Peeling force.For example, in above-mentioned sheet for processing semiconductor 1, since stripping film 30 is contacted with semiconductor associated layer 80, provide For the peeling force β on the interface of semiconductor associated layer 80 and stripping film 30.On the other hand, has fixture adhesion aftermentioned In the sheet for processing semiconductor 2 (with reference to Fig. 8) of the second embodiment of oxidant layer 60, semiconductor associated layer 80 and fixture sticker Layer 60 contacts stripping film 30 simultaneously.Here, compared to the contact with semiconductor associated layer 80 of stripping film 30, stripping film 30 and fixture With the contact of adhering agent layer 60, the influence caused by peeling force during to stripping film 30 being removed from sheet for processing semiconductor 2 Bigger.Therefore, it is as described later, it is specified that viscous to be used in fixture in the sheet for processing semiconductor 2 for having fixture adhering agent layer 60 Face (the first face of the face (the second face 602) of 30 side of stripping film of oxidant layer 60 and fixture 60 side of adhering agent layer of stripping film 30 301) the peeling force β on interface.
In the sheet for processing semiconductor 1 of present embodiment, peeling force β be 10~1000mN/50mm, preferably 10~ 500mN/50mm, particularly preferably 30~200mN/50mm.When peeling force β is less than 10mN/50mm, by sheet for processing semiconductor 1 from volume when unreeling and in the stage being not intended in addition to this, and the laminated body of base material 10 and semiconductor associated layer 80 is easily from stripping From being removed on film 30.In addition, when peeling force β is more than 1000mN/50mm, when using sheet for processing semiconductor 1, it is difficult to by base material 10 remove with the laminated body of semiconductor associated layer 80 from stripping film 30, and workability is deteriorated.It will especially with wafer laminator When the laminated body is bonded on a semiconductor wafer successively, occur well remove from stripping film 30 such as the laminated body, from And the unfavorable condition that can not be bonded.
The thickness of sheet for processing semiconductor 1 about present embodiment, as long as sheet for processing semiconductor 1 can used Process in appropriately function, then be not limited.The thickness is preferably generally 50~300 μm, particularly preferably 50~250 μm, further preferably 50~230 μm.It is being used in addition, the thickness of the sheet for processing semiconductor 1 in this specification refers to remove Thickness after the stripping film 30 being stripped before sheet for processing semiconductor 1.
2. base material
In the sheet for processing semiconductor 1 of present embodiment, the arithmetic average roughness Ra in the first face 101 of base material 10 is 0.01~0.8 μm, particularly preferably 0.02~0.5 μm, further preferably 0.03~0.3 μm.Arithmetic average roughness Ra If less than 0.01 μm, the first face 101 becomes over smoothly, and the value change of peeling force α is too much, by sheet for processing semiconductor volume 1 It easily sticks together during for web-like, and is difficult to meet above-mentioned relationship between peeling force α and peeling force β.In addition, the arithmetic average If more than 0.8 μm, then the light being radiated on the first face 101 easily scatters roughness Ra on the face, damages light transmittance. In addition, the arithmetic average roughness Ra in this specification is according to JIS B0601:2013 and measure value, assay method it is detailed Carefully shown in embodiment as be described hereinafter.
In order to reach above-mentioned arithmetic average roughness Ra, when manufacturing base material 10, preferably with thick with above-mentioned arithmetic average The mode of rugosity Ra is manufactured.For example, it is preferable to the rough surface by adjusting the roller used in the extrusion molding of base material 10 Degree, to manufacture the base material 10 with above-mentioned arithmetic average roughness Ra.It, will be into or preferably when blow moulding is used to manufacture base material 10 The roughness in the face for the first face 101 is adjusted to above-mentioned arithmetic average roughness Ra.
The arithmetic average roughness Ra in the second face 102 of base material 10, as long as can be ensured that the light transmittance of base material 10, then It can suitably set, such as preferably 0.01~2.0 μm, particularly preferably 0.03~1.5 μm, further preferably 0.05~1.0 μ m。
In the sheet for processing semiconductor 1 of present embodiment, the constituent material of base material 10, as long as the light to required wavelength Play excellent light transmittance, and sheet for processing semiconductor 1 can using process in play required function, then do not have It is particularly limited to.Base material 10 may include the film (resin film) using the material of resinae as main material.Base material 10 is preferably only by resin Film is formed.As the concrete example of resin film, vinyl-vinyl acetate copolymer film can be enumerated；Ethylene-(methyl) acrylic acid copolymer Object film, ethylene-(methyl) methyl acrylate copolymer film and other ethylene-(methyl) acrylate copolymer film etc. Vinyl combined polymerization film；Polyethylene film, polypropylene screen, polybutene film, polybutadiene film, polymethylpentene film, ethylene-norborneol The polyolefins film of alkene copolymer film, norbornene resin film etc.；The polyvinyl chloride of polychloroethylene film, vinyl chloride copolymer film etc. Class film；The polyesters film of polyethylene terephthalate film, polybutylene terephthalate film, polyethylene naphthalate etc.； (methyl) acrylate copolymer film；Polyurethane film；Polyimide film；Polystyrene film；Polycarbonate membrane；Fluororesin film etc.. As the example of polyethylene film, low density polyethylene (LDPE) (LDPE) film, straight-chain low density polyethylene (LLDPE) film, highly dense can be enumerated Spend polyethylene (HDPE) film etc..In addition, it is possible to use the Modified Membrane of their cross linking membrane, ionic polymer membranes etc..Base material 10 can For the film formed by a kind of above-mentioned film formed or by combining the material more than 2 above-mentioned types formed.In addition, may be used also The stacked film of the multilayered structure formed to be laminated with multilayer by the layer that above-mentioned a kind or more of material is formed.In the stacked film, structure Material into each layer can be of the same race or not of the same race.As base material 10, it is preferable to use ethane-acetic acid ethyenyl among above-mentioned film Ester copolymer film, ethylene methyl methacrylate copolymer film, polychloroethylene film or polypropylene screen.In addition, this specification " (methyl) acrylic acid " refers to both acrylic acid and methacrylic acid.Other similar terms are also the same.
In base material 10, as long as not damaging the excellent light transmittance to the light of required wavelength, in above-mentioned film also Can contain fire retardant, plasticizer, antistatic agent, lubrication prescription, antioxidant, colorant, infrared absorbent, ultra-violet absorber, The various additives of ion capturing agent etc..It as the content of these additives, is not particularly limited, it is preferred that being set as base material 10 Play excellent light transmittance and the range of required function.
In addition, as described later, it is possible to use adhering agent layer 20 makes this as semiconductor associated layer 80 using energy-ray When adhering agent layer 20 cures, base material 10 preferably has light transmittance to the energy-ray.Such as the example as the energy-ray Son can enumerate ultraviolet light, electron beam etc..
About the second face 102 of base material 10, as long as not damaging the light transmittance of sheet for processing semiconductor 1, then in order to carry The high adherence with semiconductor associated layer 80, at the surface that can also implement prime treatment, sided corona treatment, corona treatment etc. Reason.
About the thickness of base material 10, make as long as sheet for processing semiconductor 1 can suitably play in used process With being then not limited.The thickness is preferably generally 20~450 μm, particularly preferably 25~300 μm, further preferably 50~ 200μm。
3. stripping film
The arithmetic average roughness Ra in the second face 302 of stripping film 30 is preferably 0.02~0.8 μm, particularly preferably 0.03 ~0.5 μm, further preferably 0.05~0.3 μm.It is 0.02~0.8 μ by the arithmetic average roughness Ra for making the second face 302 M, the value that the second face 302 has appropriate roughness and peeling force α do not become too big.As a result, between peeling force α and peeling force β Readily satisfy above-mentioned relation.In addition, being 0.02 μm or more by making the arithmetic average roughness Ra in the second face 302, will partly lead When body processing piece 1 is batched as web-like, the second face 302 of stripping film 30 is also not easy the first face in close contact with smooth base material 10 On 101, as a result, it is possible to be effectively prevented to stick together.Further, by making the arithmetic average roughness Ra in the second face 302 For 0.8 μm hereinafter, when batching sheet for processing semiconductor 1 for web-like, even if the surface shape in the second face 302 of stripping film 30 The first face 101 of base material 10 is transferred to, can also prevent the flatness in the first face 101 reduces.
It, can be with above-mentioned arithmetic average when manufacturing stripping film 30 in order to reach above-mentioned arithmetic average roughness Ra The mode of roughness Ra is manufactured.Or after the constituent material of stripping film 30 is made as sheet, to be put down with above-mentioned arithmetic The mode of equal roughness Ra is implemented to be surface-treated to the piece.In the case of the former, such as can be by adjusting in stripping film 30 The roughness of the roller used in extrusion molding, so as to manufacture the stripping film 30 with above-mentioned arithmetic average roughness Ra.The latter's In the case of, such as can be by implementing blasting treatment, embossing processing etc. to piece, so as to manufacture with above-mentioned arithmetic average roughness The stripping film 30 of Ra.
The arithmetic average roughness Ra in the first face 301 of stripping film 30, if can reach peeling force α and peeling force β it Between above-mentioned relationship and peeling force β above-mentioned value, then can suitably set, such as preferably 0.02~0.10 μm, especially Preferably 0.02~0.07 μm, further preferably 0.03~0.05 μm.
In order to play the fissility to semiconductor associated layer 80, stripping film 30 usually sets remover in 301 side of the first face Layer.In addition, in the stripping film 30 of the sheet for processing semiconductor 1 of present embodiment, it also can be in 301 side of the first face and the second face 302 sides have peeling agent layer respectively.At this point, stripping film 30, such as with having peeling agent layer on the two sides of the base materials such as resin film Structure.By having peeling agent layer in 301 side of the first face, peeling force β easily reaches above-mentioned value.In addition, by the second face 302 sides have peeling agent layer, easily reach above-mentioned relation between peeling force α and peeling force β.As remover, can use have Machine silicon class remover, alcohol acids remover, fluorine class remover, chain alkyl class remover, rubber remover etc..Wherein, from Easily peeling force β adjustment is set out as the angle of above-mentioned value, in 301 side of the first face it is preferable to use organic silicon remover, from Easily ratio (α/β) adjustment of the peeling force α than peeling force β is set out as the angle of above-mentioned value, 302 side of the second face it is preferable to use Organic silicon remover or alcohol acids remover.
As the material of composition stripping film 30, such as resin film can be used.As the concrete example of resin film, can enumerate poly- The polyester film of ethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate etc.；And polypropylene or poly- second The polyolefin film of alkene etc..
The thickness of stripping film 30 is not particularly limited, but usually 12~250 μm or so.
4. semiconductor associated layer
Semiconductor associated layer 80 refers in the sheet for processing semiconductor 1 for using present embodiment, the institutes such as semiconductor crystal wafer The layer of attaching or the layer being attached on semiconductor crystal wafer etc..Attaching at this time can be temporary when using sheet for processing semiconductor 1 The attaching of progress can also be to use the attaching also continued with after sheet for processing semiconductor 1.As the excellent of semiconductor associated layer 80 Example is selected, adhering agent layer 20 can be enumerated, adhesion agent layer 40, protective film forming layer 50, be made of adhering agent layer 20 and adhesion agent layer 40 Laminated body, the laminated body that is made of adhering agent layer 20 and protective film forming layer 50 etc..
In Fig. 3, the first form of the sheet for processing semiconductor 1 of first embodiment is represented.Add in the semiconductor of the form For work in piece 1a, semiconductor associated layer 80 is adhering agent layer 20.In sheet for processing semiconductor 1a, adhering agent layer 20 is close to base The side of material 10 has the first face 201, and has the second face 202 close to the side of stripping film 30.In addition, semiconductor machining is used Piece 1a can be used, for example, as cutting sheet.
In Fig. 4, the second form of the sheet for processing semiconductor 1 of first embodiment is represented.Add in the semiconductor of the form For work in piece 1b, semiconductor associated layer 80 is adhesion agent layer 40.In sheet for processing semiconductor 1b, adhesion agent layer 40 is close to base The side of material 10 has the first face 401, and has the second face 402 close to the side of stripping film 30.In addition, semiconductor machining is used Piece 1b can be used, for example, as tube core bonding pad.
In Fig. 5, the third form of the sheet for processing semiconductor 1 of first embodiment is represented.Add in the semiconductor of the form For work in piece 1c, semiconductor associated layer 80 is protective film forming layer 50.In sheet for processing semiconductor 1c, protective film forming layer 50 There is the first face 501, and there is the second face 502 close to the side of stripping film 30 close to the side of base material 10.In addition, it partly leads Body processing can be used, for example, as with piece 1c as protective film formation piece.
In Fig. 6, the 4th form of the sheet for processing semiconductor 1 of first embodiment is represented.Add in the semiconductor of the form For work in piece 1d, semiconductor associated layer 80 is the laminated body being made of adhering agent layer 20 and adhesion agent layer 40.In semiconductor machining With in piece 1d, adhering agent layer 20 is located at close to the side of base material 10, and adhesion agent layer 40 is located at close to the side of stripping film 30.This Outside, adhering agent layer 20 has the first face 201, and have the second face close to the side of stripping film 30 close to the side of base material 10 202.Further, adhesion agent layer 40 has the first face 401, and have close to the side of stripping film 30 close to the side of base material 10 There is the second face 402.In addition, sheet for processing semiconductor 1d can be used, for example, as dicing die bonding pad.
In Fig. 7, the 5th form of the sheet for processing semiconductor 1 of first embodiment is represented.Add in the semiconductor of the form For work in piece 1e, semiconductor associated layer 80 is the laminated body being made of adhering agent layer 20 and protective film forming layer 50.In semiconductor Processing is in piece 1e, and adhering agent layer 20 is located at close to the side of base material 10, and protective film forming layer 50 is located at close to stripping film 30 Side.In addition, adhering agent layer 20 has the first face 201, and have close to the side of stripping film 30 close to the side of base material 10 There is the second face 202.Further, protective film forming layer 50 has the first face 501, and close to stripping close to the side of base material 10 The side of film 30 has the second face 502.In addition, sheet for processing semiconductor 1e can be used for the cutting of semiconductor crystal wafer, and carry out It, can be by being heated etc. to protective film forming layer 50 after cutting, and protective film is formed on the semiconductor wafer.In addition, half Conductor processing piece 1e, it is also possible to as protective film formation piece.
(1) adhering agent layer
In the sheet for processing semiconductor 1 of present embodiment, adhering agent layer 20 can be by non-energy ray-curable sticker (polymer for not having energy ray-curable) is formed, and can be also made of energy ray-curable sticker.As non-energy Ray-curable sticker preferably with required adhesion strength and releasable, such as can use acrylic compounds sticker, rubber Glue class sticker, organic silicon sticker, carbamates sticker, polyesters sticker, polyvinyl ether sticker Deng.Wherein, the acrylic compounds to come off that preferably can effectively inhibit semiconductor crystal wafer, semiconductor wafer etc. in cutting action etc. glue Agent.
On the other hand, since energy ray-curable sticker by irradiation energy ray reduces adhesion strength, Semiconductor crystal wafer to be made, semiconductor wafer, can be by irradiation energy rays and easy when being detached with sheet for processing semiconductor 1 Ground makes its separation.
The energy ray-curable sticker of adhering agent layer 20 is formed, the polymer with energy ray-curable can be made It, also can be by non-energy ray-curable polymer (polymer for not having energy ray-curable) with having extremely for main component The monomer of energy ray-curable group 1 or more few and/or the mixture of oligomer are as main component.In addition, also may be used It is penetrated for the polymer with energy ray-curable with the mixture of non-energy ray-curable polymer or with energy The mixing of the polymer of line curability and monomer and/or oligomer with energy ray-curable group more than at least one Object or above-mentioned 3 kinds of mixture.
First, below to energy ray-curable sticker using the polymer with energy ray-curable as mainly into Situation about dividing illustrates.
Polymer with energy ray-curable is preferably imported with the function with energy ray-curable in side chain (methyl) the acrylate (co) polymer (A) of group's (energy ray-curable group) is (hereinafter sometimes referred to " energy ray curing Type polymer (A) ").The energy ray-curable polymer (A), preferably by making the propylene with the unit containing monomer Acid copolymer (a1) is obtained with having to react with the compound containing unsaturated group (a2) of functional group that the functional group is bonded.
Acrylic copolymer (a1) is by the structural unit by being imported containing monomer and by (methyl) acrylate list The structural unit that body or derivatives thereof imports is formed.
Structural unit as acrylic copolymer (a1) containing monomer, preferably there is polymerization in the molecule The monomer of the functional group of property double bond and hydroxyl, carboxyl, amino, substituted-amino, epoxy group etc..
As hydroxyl monomer, such as (methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylic acid 2- hydroxyls third can be enumerated Ester, (methyl) acrylic acid 3- hydroxy propyl esters, (methyl) acrylic acid 2- hydroxybutyls, (methyl) acrylic acid 3- hydroxybutyls, (first Base) acrylic acid 4- hydroxybutyls etc..They can be used alone, and also can be used in combination two or more.
As carboxyl group-containing monomer, such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, lemon health can be enumerated The ethylenically unsaturated carboxylic acids of acid etc..They can be used alone, and also can be used in combination two or more.
As emulsion stability or monomer containing substituted-amino, such as (methyl) acrylate, (methyl) can be enumerated Acrylic acid n-butylamino ethyl ester etc..They can be used alone, and also can be used in combination two or more.
As (methyl) acrylate monomer for forming acrylic copolymer (a1), the carbon atom number of alkyl can be used For 1~20 (methyl) alkyl acrylate, (methyl) acrylate ester, (methyl) benzyl acrylate.Wherein, particularly preferably (methyl) alkyl acrylate that carbon atom number using alkyl is 1~18, such as (methyl) methyl acrylate, (methyl) propylene Acetoacetic ester, (methyl) propyl acrylate, (methyl) n-butyl acrylate, (methyl) 2-EHA etc..
Acrylic copolymer (a1) is usually contained with the ratio of 5~40 mass % by upper with 3~100 mass %, preferably State the structural unit imported containing monomer, usually with 0~97 mass %, preferably with the ratio of 60~95 mass % contain by (methyl) acrylate monomer or derivatives thereof import structural unit and formed.
Acrylic copolymer (a1), will can as described above be contained by using common method monomer, with (methyl) acrylate monomer or derivatives thereof copolymerization obtains, in addition to these monomers, also copolymerizable dimethyl allene acyl Amine, vinyl formate, vinyl acetate, styrene etc..
By make the acrylic copolymer (a1) with the above-mentioned unit containing monomer, with with functional group's key Compound containing unsaturated group (a2) reaction of the functional group of conjunction, so as to obtain energy ray-curable polymer (A).
Functional group possessed by compound containing unsaturated group (a2), can be according to possessed by acrylic copolymer (a1) Functional group's type of the unit containing monomer and properly select.Such as functional group possessed by acrylic copolymer (a1) During for hydroxyl, amino or substituted-amino, as functional group, preferably isocyanates possessed by compound containing unsaturated group (a2) Base or epoxy group；When functional group possessed by acrylic copolymer (a1) is epoxy group, as compound containing unsaturated group (a2) functional group possessed by, preferably amino, carboxyl or aziridinyl.
In addition, in above-mentioned compound containing unsaturated group (a2), in 1 molecule, at least containing 1, preferably comprise 1~6, The carbon-to-carbon double bond of further preferably 1~4 energy-ray polymerism.As such compound containing unsaturated group (a2) Concrete example, such as 2- methacryloxyethyls isocyanates, isopropenyl-alpha, alpha-dimethylbenzyl isocyanide can be enumerated Acid esters, methacryloyl isocyanate, allyl isocyanate, 1,1- (double acryloyloxymethyls) ethyl isocyanate；It is logical Propylene obtained from crossing the reacting of diisocyanate cpd or polyisocyanate compounds and (methyl) Hydroxyethyl Acrylate One isocyanate compound of acyl group；Pass through diisocyanate cpd or polyisocyanate compounds and polyol compound, (first Base) Hydroxyethyl Acrylate reaction obtained from one isocyanate compound of acryloyl group；(methyl) Glycidyl Acrylate； (methyl) acrylic acid, (methyl) acrylic acid 2- (1- aziridinyls) ethyl ester, 2- vinyl -2- oxazolines, 2- isopropenyl -2- Evil Oxazoline etc..
Above-mentioned compound containing unsaturated group (a2) contains monomer relative to above-mentioned acrylic copolymer (a1), Usually with 5~95 moles of %, preferably used with the ratio of 10~95 moles of %.
In the reacting of acrylic copolymer (a1) and compound containing unsaturated group (a2), it can be total to according to acrylic compounds The combination of functional group possessed by polymers (a1) and functional group possessed by compound containing unsaturated group (a2), and properly select The presence or absence of reaction temperature, pressure, solvent, time, catalyst, the type of catalyst.It is deposited in acrylic copolymer (a1) as a result, Functional group reacted with the functional group in compound containing unsaturated group (a2), unsaturated group is imported into acrylic copolymer In side chain in object (a1), energy ray-curable polymer (A) is obtained.
The weight average molecular weight of energy ray-curable polymer (A) is preferably 10, more than 000 obtained from so carrying out, Particularly preferably 150,000~1,500,000, further preferably 200,000~1,000,000.In addition, in this specification Weight average molecular weight (Mw) is the value that the standard polystyren measured by gel permeation chromatography (GPC method) converts.
Energy ray-curable sticker will have energy ray-curable such as energy ray-curable polymer (A) Polymer as main component when, energy ray-curable sticker also can the further monomer containing energy ray-curable And/or oligomer (B).
As the monomer and/or oligomer (B) of energy ray-curable, such as polyalcohol and (methyl) propylene can be used Ester of acid etc..
As the monomer and/or oligomer (B) of the energy ray-curable, such as (methyl) acrylate can be enumerated Mono-functional's esters of acrylic acid of ester, (methyl) isobornyl acrylate etc., trimethylolpropane tris (methyl) acrylate, season Penta tetrol three (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, 1, 4- butanediols two (methyl) acrylate, 1,6-HD two (methyl) acrylate, polyethylene glycol two (methyl) acrylate, Polyfunctional acrylate's class of dihydroxymethyl tristane two (methyl) acrylate etc., polyester oligomerization (methyl) acrylic acid Ester, polyurethane oligomerization (methyl) acrylate etc..
When the monomer of energy ray-curable and/or oligomer (B) are blended into energy ray-curable polymer (A), The content of the monomer and/or oligomer (B) of energy ray-curable in energy ray-curable sticker, is penetrated relative to energy 100 mass parts of line curing type polymer (A), particularly preferably preferably 10~40 mass parts, 30~350 mass parts.
Here, during using ultraviolet light as obtaining the energy-ray of energy ray-curable sticker, preferably add Photoepolymerizationinitiater initiater (C) by using the Photoepolymerizationinitiater initiater (C), can reduce polymerizing curable time and light exposure.
As Photoepolymerizationinitiater initiater (C), specifically, can enumerate benzophenone, acetophenone, benzoin, benzoin methylether, Benzoin ethyl ether, benzoin iso-propylether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin diformazan Ketal, 2,4- diethyl thioxanthones, 1- hydroxycyclohexylphenylketones, benzyldiphenyl thioether, tetramethylthiuram monosulfide, idol Nitrogen bis-isobutyronitrile, benzyl, dibenzyl (dibenzyl), diacetyl, β-chloroanthraquinone, (2,4,6- trimethyl benzyls diphenyl) oxidation Phosphine, 2-[4-morpholinodithio-N, N- diethyldithiocar bamic acid, oligomerization { 2- hydroxy-2-methyls -1- [4- (1- acrylic) benzene Base] acetone, 2,2- dimethoxy -1,2- diphenylethane -1- ketone etc..They can be used alone, also can be used simultaneously 2 kinds with On.
(monomer of energy ray-curable and/or oligomer (B) are blended relative to energy ray-curable copolymer (A) When, relative to the total amount of energy ray-curable copolymer (A) and the monomer and/or oligomer (B) of energy ray-curable 100 mass parts) 100 mass parts, using the Photoepolymerizationinitiater initiater (C) of 0.1~10 mass parts, particularly preferably with 0.5~6 mass parts Range amount use Photoepolymerizationinitiater initiater (C).
In energy ray-curable sticker, other than mentioned component, other ingredients also can be suitably blended.As Other ingredients, such as non-energy ray-curable component of polymer or oligomer ingredient (D), crosslinking agent (E) etc. can be enumerated.
As non-energy ray-curable component of polymer or oligomer ingredient (D), such as polyacrylate can be enumerated, gathered Ester, polyurethane, makrolon, polyolefin etc., polymer or the widow that preferable weight-average molecular weight (Mw) is 3,000~2,500,000 Polymers.By blending the ingredient (D) into energy ray-curable sticker, adherence before curing and stripping can be improved Property, the intensity after curing, with other layers of adherence, storage stability etc..The blended amount of the ingredient (D) is not particularly limited.
As crosslinking agent (E), can use have with functional group possessed by energy ray-curable copolymer (A) etc. it is anti- The multi-functional compounds of answering property.As the example of such multi-functional compounds, isocyanate compound, epoxy can be enumerated Compound, amine compounds, melamine compound, aziridine cpd, hydrazine compound, aldehyde compound, oxazoline compounds, gold Belong to alkoxide compounds, metal chelate compound, metal salt, ammonium salt, reactive phenolic resin etc..By consolidating to energy-ray The ingredient (E) is blended in the property changed sticker, the coherency etc. of adherence before curing and fissility, sticker can be improved.It should The blended amount of ingredient (E) is not particularly limited, relative to 100 mass parts of energy ray-curable copolymer (A), in 0~15 matter It is suitably determined in the range of amount part.
Then, below to energy ray-curable sticker by non-energy ray-curable component of polymer and at least The monomer of energy ray-curable group and/or the mixture of oligomer of 1 or more is made situation as main component and is said It is bright.
As non-energy ray-curable component of polymer, such as can use and above-mentioned acrylic copolymer (a1) Same ingredient.
As monomer and/or oligomer with energy ray-curable group more than at least one, can select with it is upper The ingredient (B) stated identical monomer and/or oligomer.About non-energy ray-curable component of polymer with having at least one The above monomer of energy ray-curable group and/or the blend ratio of oligomer polymerize relative to non-energy ray-curable 100 mass parts of object ingredient, there is the monomer of the energy ray-curable group of few 1 or more and/or oligomer be preferably 10~ 250 mass parts, particularly preferably 25~100 mass parts.
At this point, also as described above, it can suitably blend Photoepolymerizationinitiater initiater (C), crosslinking agent (E) etc..
As long as sheet for processing semiconductor 1 can appropriately function in used process, then adhering agent layer 20 Thickness is not particularly limited.Specifically, it is preferable that be 1~50 μm, particularly preferably 2~40 μm, further preferably 3~30 μ m。
(2) adhesion agent layer
As the material of adhesion agent layer 40 is formed, as long as wafer can be fixed when being cut and can be to being sliced Chip formed adhesion agent layer, then can be used without special restrictions.As the material of adhesion agent layer as composition 40, use By hot plasticity resin and the Thermocurable of the low molecular weight material that then ingredient is formed, the heat cure by B ranks (semi-solid preparation shape) Type material that then ingredient is formed etc..Wherein, as the material for forming adhesion agent layer 40, hot plasticity resin and heat are preferably comprised The material of curability then ingredient.As hot plasticity resin, can enumerate (methyl) acrylic copolymer, polyester resin, Urethane based resin, polybutene, polybutadiene, polyvinyl chloride, polyethylene terephthalate, gathers phenoxy group resinoid Butylene terephthalate, ethylene (methyl) acrylic copolymer, ethylene (methyl) acrylic acid esters co-polymer, polyphenyl second Alkene, makrolon, polyimides etc., particularly with regard to adherence and for making film property (piece processability), preferred (methyl) acrylic acid Analog copolymer.As Thermocurable then ingredient, epoxylite, polyimide based resin, phenolic resinoid, organic can be enumerated Silicon resinoid, cyanate resin, Bismaleimide Triazine resinoid, allylation polyphenylene ether group resin (Thermocurable PPE), formaldehyde resin, unsaturated polyester (UP) or its copolymer etc., particularly from the angle of adherence, preferably epoxies tree Fat.It is excellent, particularly from shown in Fig. 6 half from the adhesion to semiconductor crystal wafer as the material for forming adhesion agent layer 40 Conductor processing is set out in piece 1d with the excellent this point of the fissility of adhering agent layer 20, particularly preferably contains (methyl) acrylic compounds The material of copolymer and epoxylite.
It as (methyl) acrylic copolymer, is not particularly limited, known (methyl) acrylic acid can be used Analog copolymer.The weight average molecular weight (Mw) of (methyl) acrylic copolymer is preferably 10,000~2,000,000, particularly preferably It is 100,000~1,500,000.It is 10, more than 000 by the Mw for making (methyl) acrylic copolymer, particularly in Fig. 6 institutes In the sheet for processing semiconductor 1d shown, the fissility of adhesion agent layer 40 and adhering agent layer 20 becomes better, can effectively into The pickup of row chip.In addition, by making the Mw of (methyl) acrylic copolymer for 2,000,000 hereinafter, 40 energy of adhesion agent layer Enough bumps for following adherend better, can be effectively prevented and generate gap etc..
Preferably -60~70 DEG C of the glass transition temperature (Tg) of (methyl) acrylic copolymer, more preferably -30~ 50℃.It it is -60 DEG C or more by the Tg for making (methyl) acrylic copolymer, semiconductor machining particularly shown in Fig. 6 is used In piece 1d, the fissility of adhesion agent layer 40 and adhering agent layer 20 becomes better, and the pickup of chip can be effectively performed.This Outside, by making the Tg of (methyl) acrylic copolymer for 70 DEG C hereinafter, can fully obtain fixing wafer then Power.
As the monomer for forming (methyl) acrylic copolymer, (methyl) acrylate monomer or its derivative can be enumerated Object, more specifically, such as can enumerate (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, The carbon atom number of the alkyl such as (methyl) butyl acrylate is 1~18 (methyl) alkyl acrylate；(methyl) acrylate Ester, (methyl) benzyl acrylate, (methyl) isobornyl acrylate, (methyl) dicyclopentanyl acrylate, (methyl) acrylic acid two Cyclopentene ester, (methyl) acrylic acid dicyclopentenyl oxygroup ethyl ester, (methyl) acrylic acid imide ester etc. have (the first of cyclic skeleton Base) acrylate；(methyl) dihydroxypropyl methyl esters, (methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylic acid 2- hydroxyls third (methyl) acrylate of the hydroxyl of ester etc.；Glycidyl acrylate, glycidyl methacrylate etc..In addition, also may be used Use the unsaturated monomer containing carboxyl such as acrylic acid, methacrylic acid, itaconic acid.They can be used alone a kind, also can be simultaneously Use two or more.
As form (methyl) acrylic copolymer monomer, among above-mentioned, just with the compatibility of epoxylite and Speech, preferably at least using hydroxyl (methyl) acrylate.At this point, in (methyl) acrylic copolymer, preferably with 1~20 The range of quality % more preferably contains the structural unit from hydroxyl (methyl) acrylate with the range of 3~15 mass %. As (methyl) acrylic copolymer, specifically, it is preferable that (methyl) alkyl acrylate and hydroxyl (methyl) acrylic acid The copolymer of ester.
In addition, in the range of the purpose of the present invention is not damaged, (methyl) acrylic copolymer can also make vinyl acetate The monomer copolymerization of ester, acrylonitrile, styrene etc..
As epoxylite, known various epoxylites can be used.As epoxylite, can enumerate Bisphenol A type epoxy resin, bisphenol f type epoxy resin, phenylene matrix type epoxy resin, phenol novolak type epoxy resin, Cresol novolak type epoxy resin, bicyclopentadiene (DCPD) type epoxy resin, biphenyl type epoxy resin, triphenol methane type ring Oxygen resin, heterocyclic-type epoxy resin, Stilbene-based epoxy resin, condensation aromatic hydrocarbon modified epoxy, their halogenation Contain 2 or more epoxylite of functional group etc. in the structural unit of object etc..These epoxylites can be used alone 1 Kind, it also can be used simultaneously two or more.
The epoxide equivalent of epoxylite is not particularly limited.Epoxide equivalent is preferably generally 150~1000g/eq.Separately Outside, the epoxide equivalent in this specification is according to JIS K7236:2009 and measure value.
The content of epoxylite, relative to 100 mass parts of (methyl) acrylic copolymer, preferably 1~1500 matter Measure part, more preferably 3~1000 mass parts.By making the content of epoxylite relative to (methyl) acrylic copolymer 100 mass parts is more than 1 mass parts, can obtain sufficient adhesion.In addition, by make the content of epoxylite relative to 100 mass parts of (methyl) acrylic copolymer are below mass part for 1500, can adequately be made film property, can be effectively Form adhesion agent layer 40.
The material of adhesion agent layer 40 is formed, preferably further containing the curing agent for being useful for cured epoxy resinoid.As solid Agent, can enumerate in molecule with 2 or more can be with the compound of the functional group of epoxy reaction, can as the functional group Enumerate phenolic hydroxyl group, alcohol hydroxyl group, amino, carboxyl, anhydride group etc..Wherein, preferably phenolic hydroxyl group, amino and anhydride group, it is more excellent Select phenolic hydroxyl group and amino.
As the concrete example of curing agent, phenolic varnish type phenolic resin, bicyclopentadiene class phenolic resin, triphenol can be enumerated The phenol thermal curing agents of methane type phenolic resin, aralkyl phenolic resin etc.；The amine thermal curing agents of DICY (cyanoguanidine) etc..Curing Agent can be used alone a kind, can also use two or more simultaneously.
The content of curing agent, relative to 100 mass parts of epoxylite, preferably 0.1~500 mass parts, more preferably 1 ~200 mass parts.By making the content of curing agent relative to 100 mass parts of epoxylite for that more than 0.1 mass parts, can obtain To sufficient adhesion.In addition, by make the content of curing agent relative to 100 mass parts of epoxylite for 500 mass parts with Under, the hydroscopicity that can be effectively prevented adhesion agent layer 40 rises, and the reliability that can make semiconductor packages is more excellent.
The material (adhesive composition) of adhesion agent layer 40 is formed, in addition to the foregoing, can also contain curing as needed It is accelerating agent, coupling agent, crosslinking agent, energy ray-curable compound, Photoepolymerizationinitiater initiater, plasticizer, antistatic agent, anti-oxidant The various additives of agent, pigment, dyestuff, inorganic filler etc..These each additives can individually containing a kind, can also combine 2 kinds with Above contain.
Curing accelerator is used to adjust the curing rate of adhesive composition.As curing accelerator, it is preferably able to promote The compound reacted of epoxy group and phenolic hydroxyl group or amine etc..As the compound, specifically, tertiary amines, 2- benzene can be enumerated Imidazoles, organic phosphine, tetraphenyl boron salt of base -4,5- two (methylol) imidazoles etc. etc..
Coupling agent has the function of the adherence adherence to adherend for improving adhesive composition.In addition, pass through , can be in the case of the heat resistance for not damaging the solidfied material for curing adhesive composition using coupling agent, improving should The water resistance of solidfied material.Coupling agent preferably have with above-mentioned (methyl) acrylic polymer and epoxylite possessed by The compound for the group that functional group is reacted.As such coupling agent, preferably silane coupling agent.
It as silane coupling agent, is not particularly limited, well known silane coupling agent can be used.Such as γ-ring can be enumerated The third oxygen propyl trimethoxy silicane of oxygen, γ-glycidoxypropyl diethoxy silane, β-(3,4- epoxycyclohexyls) ethyl Trimethoxy silane, γ-(methacryloxypropyl) trimethoxy silane, gamma-amino propyl trimethoxy silicane, N-6- (amino-ethyl)-gamma-amino propyl trimethoxy silicane, N-6- (amino-ethyl)-gamma-amino hydroxypropyl methyl diethoxy silicon Alkane, N- phenyl-gamma-amino propyl trimethoxy silicane, γ-urea propyl-triethoxysilicane, γ-sulfhydryl propyl trimethoxy Silane, γ-sulfhydryl hydroxypropyl methyl dimethoxysilane, bis- (3- tri-ethoxy silylpropyls) four sulfanes, methyl trimethoxy oxygen Base silane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxy silane, imidizole silane etc..It Can be a kind independent, can also mix two or more and use.
Crosslinking agent is used to adjust the cohesiveness of adhesion agent layer 40.Crosslinking as above-mentioned (methyl) acrylic polymer Agent is not particularly limited, can use well known crosslinking agent, such as can used as form adhering agent layer 20 material and The crosslinking agent above described.
Energy ray-curable compound be by ultraviolet light when the polymerizing curable that carried out when irradiating of energy-ray change Close object.Make energy ray-curable compound cures by using energy-ray irradiation, semiconductor particularly shown in Fig. 6 adds Work is in piece 1d, and due to that can improve the fissility of adhesion agent layer 40 and adhering agent layer 20, the pickup of semiconductor wafer becomes It obtains easily.
As energy ray-curable compound, preferably acrylic compounds, particularly preferably have at least 1 in the molecule A polymeric double bond.As such acrylic compounds, specifically, two propylene of bicyclopentadiene dimethoxy can be enumerated Acid esters, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol Five acrylate of monohydroxy, dipentaerythritol hexaacrylate, 1,4 butanediol diacrylate, 1,6-HD diacrylate Ester, polyethyleneglycol diacrylate, few polyester acrylate, urethane acrylate class oligomer, epoxy-modified propylene Acid esters, polyether acrylate, itaconic acid oligomer etc..
The weight average molecular weight of acrylic compounds is usually 100~30000, and preferably 300~10000 or so.
When adhesive composition contains energy ray-curable compound, the content of energy ray-curable compound is opposite In 100 mass parts of (methyl) acrylic polymer, usually 1~400 mass parts, preferably 3~300 mass parts, more preferably For 10~200 mass parts.
When adhesion agent layer 40 contains above-mentioned energy ray-curable compound, gathered in the irradiation by energy-ray When closing curing, Photoepolymerizationinitiater initiater can reduce the exposure of polymerizing curable time and energy-ray.As photoinitiator, do not have Especially limitation, can use well known Photoepolymerizationinitiater initiater, such as can used as form adhering agent layer 20 material and The Photoepolymerizationinitiater initiater above described.
The thickness of adhesion agent layer 40 is usually 3~100 μm, preferably 5~80 μm.
(3) protective film forming layer
Protective film forming layer 50 is preferably made of uncured curability solid.At this point, by by semiconductor crystal wafer, After semiconductor wafer etc. is overlapped on protective film forming layer 50, cure protective film forming layer 50, it can be by protective film firmly Then on semiconductor crystal wafer, semiconductor wafer etc..And the protective film with durability can be formed on chip etc..No matter The stage of curability solid uncured stage still after hardening irradiates laser to the protective film forming layer 50, can be good Lettering is carried out well.
Protective film forming layer 50 preferably has adherence or plays adherence by heating at normal temperatures.As a result, as above Institute ground is stated, by semiconductor crystal wafer, semiconductor wafer when overlapping on protective film forming layer 50, can be bonded the two.Therefore, It can positively be positioned before protective film forming layer 50 is cured, the operability of sheet for processing semiconductor 1c, 1e become Easily.
The curability solid for forming the protective film forming layer 50 with characteristic as described above preferably comprises curability composition And binder polymer composition.As curability composition, can use Thermocurable ingredient, energy ray-curable ingredient or Their mixture.The angle of heat resistance after the curing of protective film forming layer 50, curing, particularly preferably uses Thermocurable ingredient, from the angle of hardening time, it is preferable to use energy ray-curable ingredient.
As Thermocurable ingredient, such as epoxylite, phenolic resin, melamine resinoid, urea class can be enumerated Resin, polyester resin, urethane based resin, acrylic resin, polyimide based resin, benzoxazine resinoid etc. And their mixture.Wherein, it is preferable to use epoxylite, phenolic resin and their mixture.As Thermocurable into Point, usually using the Thermocurable ingredient that molecular weight is 300~10,000 or so.
Epoxylite has carries out three-dimensional nettedization so as to form the property of firm overlay film if heated.As Such epoxylite can use well known various epoxylites, but generally preferably weight average molecular weight is 300~2500 The epoxylite of left and right.Further, preferably to be mixed with weight average molecular weight as 300~500 under normal conditions for the ring of liquid Oxygen resinoid with weight average molecular weight is 400~2500, particularly weight average molecular weight be 500~2000 is solid at normal temperatures Epoxylite form and use.In addition, the epoxide equivalent of epoxylite is preferably 50~5000g/eq.
As such epoxylite, specifically, it is clear to enumerate bisphenol-A, Bisphenol F, resorcinol, phenyl phenolic aldehyde The glycidyl ethers of the phenols such as paint, cresol novolak；The glycidyl ethers of the alcohols such as butanediol, polyethylene glycol, polypropylene glycol； The glycidyl ethers of the carboxylic acids such as phthalic acid, M-phthalic acid, tetrahydrophthalic acid；Aniline will be bonded in using glycidyl The glycidyl type or the epoxy resin of alkyl epoxy propyl type that reactive hydrogen substitution on the nitrogen-atoms of chlorinated isocyanurates etc. forms； Such as vinyl cyclohexane dicyclic oxide, 3,4- epoxycyclohexyl-methyl -3,4- bicyclohexane carboxylate, 2- (3,4- epoxy groups) Cyclohexyl -5,5- spiral shells (3,4- epoxy groups) hexamethylene-Jian dioxanes etc., the carbon-to-carbon double bond of intramolecular for example passed through into oxidation And import alicyclic ring type ring oxide that epoxy group forms, so-called.In addition, it also can be used with biphenyl backbone, two cyclohexadiene The epoxylite of skeleton, naphthalene skeleton etc..
Wherein, it is preferable to use bisphenols glycidyl type epoxylite, ortho cresol novolak type epoxylite and Phenol novolak-type epoxy resinoid.These epoxylites can be used singly or in combination of two or more.
During using epoxylite, as auxiliary agent, thermal activities type potentiality epoxylite curing agent is preferably used simultaneously. Thermal activities type potentiality epoxylite curing agent refers to not react with epoxylite at room temperature, and by certain temperature more than Heating and the curing agent of type that activates and reacted with epoxylite.For thermal activities type potentiality epoxies tree The activation method of fat curing agent has the side by generating reactive species (anion, cation) based on the chemical reaction of heating Method；Be dispersed stably in epoxylite near room temperature, at high temperature with epoxylite compatible solubility, so as to make The method that curing reaction starts；Using the curing agent of molecular sieve sealed-in type, the method for dissolving out and starting curing reaction at high temperature； Method based on microcapsules etc..
As the concrete example of thermal activities type potentiality epoxylite curing agent, can enumerate variousSalt, two acyl of binary acid High-melting-point active dydrogen compounds of hydrazine compound, cyanoguanidine, amine additives curing agent, imidazolium compounds etc. etc..These thermal activities types Potentiality epoxylite curing agent can be used singly or in combination of two or more.Thermal activities as described above Type potentiality epoxylite curing agent, relative to 100 mass parts of epoxy resin, preferably with 0.1~20 mass parts, particularly preferably With 0.2~10 mass parts, further preferably used with the ratio of 0.3~5 mass parts.
As phenolic resin, it can use condensation product of the phenols such as alkylphenol, polyphenol, naphthols and aldehydes etc. that there is phenol The polymer of class hydroxyl, is not particularly limited.Specifically, phenol novolacs resinoid, o-cresol phenolic aldehyde can be used clear Paint resinoid, paracresol novolaks resinoid, t-butylphenol novolac resinoid, bicyclopentadiene cresols resinoid, Poly- 4-Vinyl phenol resinoid, bisphenol A-type novolaks resinoid or their modifier etc..
Contained phenolic hydroxyl group in these phenolic resins, by heat and can easily with above-mentioned epoxylite ring Oxygroup carries out addition reaction, can form the high solidfied material of impact resistance.Therefore, epoxylite and phenols also be can be used simultaneously Resin.
As energy ray-curable ingredient, for example, can used as form adhering agent layer 20 material and hereinbefore The energy ray-curable ingredient of description.In addition, as energy ray-curable ingredient, it is possible to use energy ray-curable list Body/oligomer.Further, as the binder polymer composition with energy ray-curable into subassembly, it is possible to use addition There is the acrylic polymer of energy ray-curable compound.
Binder polymer composition blends its purpose and is to assign the appropriate viscosity of protective film forming layer 50 or improve Operability of sheet for processing semiconductor 1c, 1e etc..The weight average molecular weight of binder polymer is usually 30,000~2,000, 000, preferably 50,000~1,500,000, particularly preferably in the range of 100,000~1,000,000.By making to divide equally again Son amount is 30, more than 000, and the film of protective film forming layer 50 is formed fully.In addition, by the way that weight average molecular weight is made to be 2,000,000 Hereinafter, the compatibility with other ingredients can be well maintained, the film that can equably carry out protective film forming layer 50 is formed.Make For such binder polymer, such as use (methyl) acrylic copolymer, polyester resin, phenoxy group resinoid, ammonia Carbamate resinoid, organic silicon resin, rubber analog copolymer etc. particularly preferably use (methyl) acrylic copolymer.
As (methyl) acrylic copolymer, such as it can enumerate and make (methyl) acrylate monomer and (methyl) acrylic acid (methyl) acrylate copolymer that derivative is polymerized.Here, as (methyl) acrylate monomer, it is preferable to use alkyl Carbon atom number be 1~18 (methyl) alkyl acrylate, such as (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) butyl acrylate etc..In addition, as (methyl) acrylic acid derivative, such as (first can be enumerated Base) acrylic acid, (methyl) Glycidyl Acrylate, (methyl) Hydroxyethyl Acrylate etc..
Among above-mentioned, if glycidyl methacrylate etc. is used as structural unit so as to which glycidyl is directed into (first Base) in acrylic copolymer, then improved with the compatibility of the epoxylite as above-mentioned Thermocurable ingredient, Er Qiebao Glass transition temperature (Tg) after the curing of cuticula forming layer 50 increases and heat resistance improves.In addition, among above-mentioned, if by propylene Sour hydroxy methacrylate etc. is used as structural unit so as to which hydroxyl is directed into (methyl) acrylic copolymer, then can control half-and-half The adherence of semiconductor wafer, semiconductor wafer etc. and adhesion physical property.In addition, glycidyl methacrylate etc. is used as structure list Member is so as to when glycidyl is directed into (methyl) acrylic copolymer, (methyl) acrylic copolymer or has ring The phenoxy group resinoid of oxygroup has Thermocurable sometimes.But such polymer with Thermocurable, in this embodiment party It is not Thermocurable ingredient in formula, and is comparable to binder polymer composition.
It is when using (methyl) acrylic copolymer as binder polymer, (methyl) acrylic copolymer Weight average molecular weight is preferably 100, more than 000, particularly preferably 150, and 000~1,000,000.(methyl) acrylic copolymer Glass transition temperature be usually less than 20 DEG C, preferably -70~0 DEG C or so, and there is adherence under room temperature (23 DEG C).
As curability composition and the blending ratio of binder polymer composition, relative to binder polymer composition 100 Mass parts, preferably with 50~1500 mass parts, particularly preferably with 70~1000 mass parts, further preferably with 80~800 mass Part blends curability composition.If blending curability composition and binder polymer composition with such ratio, show before curing Show appropriate viscosity, can steadily carry out attaching operation, in addition, after hardening, obtaining the guarantor with excellent film intensity Cuticula.
Filler and/or colorant can also be contained in protective film forming layer 50.But sheet for processing semiconductor 1c, 1e are made During the laser lettering of inspection, stealthy cutting or semiconductor wafer for wafer shape, protective film forming layer 50 must have light Line transmittance.It therefore, at this time must be the radioparent degree of the light not to be hindered to contain filler and/or colorant.On the other hand, The laser lettering of protective film that sheet for processing semiconductor 1c, 1e are used in protective film forming layer 50 or is sliced and is formed When, light transmittance is not required to protective film forming layer 50.At this point, in order to carry out laser lettering, protective film forming layer 50 The laser must be interdicted.Therefore, in order to be effectively performed laser lettering, protective film forming layer 50 preferably comprise filler and/or Colorant.In addition, if protective film forming layer 50 contains filler, protection film hardness that can be after it will cure maintains higher Meanwhile improve moisture-proof.Further, also the glossiness of protection film surface formed can be adjusted to required value.Into One step, can making the coefficient of thermal expansion of the protective film after curing, thus, it is possible to lower close to the coefficient of thermal expansion of semiconductor crystal wafer Process the warpage of the semiconductor crystal wafer in way.
As filler, silica, the oxygen of crystalline silica, fused silica, synthetic silica etc. can be enumerated Change inorganic filler of aluminium, glass balloon etc. etc..Wherein, preferably synthetic silica, particularly preferably will be as semiconductor device The synthetic silica of type that the Alpha-ray radiographic source of the main reason for failure strongly removes.As the shape of filler, can be It is any one of spherical, needle-shaped, unsetting.
In addition, the filler as addition in protective film forming layer 50, other than above-mentioned inorganic filler, can also blend work( The filler of energy property.As functional filler, for example, can enumerate will assign antistatic property gold, silver as a purpose, copper, nickel, aluminium, Stainless steel, carbon, ceramics cover the electroconductive stuffing that nickel, aluminium etc. forms with silver；To assign heat conductivity gold, silver as a purpose, Heat conductive filler of the metal material of copper, nickel, aluminium, stainless steel, silicon, germanium etc., their alloy etc. etc..
As colorant, colorant well known to inorganic pigment, organic pigment, organic dyestuff etc. can be used.
As inorganic pigment, such as carbon black, cobalt system pigment, iron system pigment, chromium system pigment, titanium system pigment, vanadium can be enumerated It is pigment, zirconium system pigment, molybdenum system pigment, ruthenium system pigment, platinum system pigment, ITO (tin indium oxides；Indium Tin Oxide) system Pigment, ATO (antimony tin) are pigment etc..
As organic pigment and organic dyestuff, such as amine can be enumerated(aminium) class pigment, anthocyanins, Merocyanine element class pigment, crocic acid (croconium) class pigment, sour cyanines (squarylium) the class pigment in side, azulene (azulenium) class pigment, polymethine class pigment, naphthalene Quinone Pigments, pyransClass pigment, phthalocyanines pigment, naphthalene cyanines class color Element, naphthalene lactim class pigment, azo pigment, condensation azo pigment, indigoid type pigment, purple cyclic ketones (perinone) class color Element, class pigment, dioxazines pigment, quinacridine ketone pigment, isoindoline ketone pigment, quinoline yellow class pigment, pyroles Pigment, thioindigo class pigment, metal combination species pigment (metal combination salt dyestuff), dithiol metal complex class pigment, indoles Phenol sulfonate, triallyl methane class pigment, anthraquinone pigments, dioxazines pigment, aphthols pigment, azomethine class pigment, Benzimidazole ketone pigment, pyranthrone pigment and intellectual circle (threne) class pigment etc..It, can in order to adjust target light transmissivity To be suitably used in mixed way these pigments or dyes.
From the angle of the lettering based on laser irradiation, among above-mentioned, it is preferable to use inorganic pigments for pigment.It is inorganic Among class pigment, particularly preferred carbon black.Since carbon black is usually black, but the part reamed by laser irradiation is presented in vain Color, poor contrast become larger, therefore are very excellent for by the visibility of the part of laser lettering.
The blended amount of filler and colorant in protective film forming layer 50, in a manner of reaching required effect and suitably Adjustment.Specifically, the blended amount of filler is preferably generally 40~80 mass %, particularly preferably 50~70 mass %. In addition, the blended amount of colorant is preferably generally 0.001~5 mass %, particularly preferably 0.01~3 mass %, it is further excellent It is selected as 0.1~2.5 mass %.
Protective film forming layer 50 can also contain coupling agent.By containing coupling agent, after the curing of protective film forming layer 50, It can make the adherence of protective film and semiconductor crystal wafer, semiconductor wafer etc. in the case of the heat resistance for not damaging protective film Adherence improves, and can improve water resistance (humidity resistance).As coupling agent, go out from its versatility and cost advantages etc. Hair, preferably silane coupling agent.As silane coupling agent, such as above-mentioned silane coupling agent can be used.
In order to adjust cohesiveness before curing, protective film forming layer 50 can also contain organic multicomponent isocyanates chemical combination The crosslinking agent of object, organic multicomponent imine compound, organic metal chelate complex class compound etc..In addition, in order to inhibit electrostatic, carry The reliability of high chip, protective film forming layer 50 can also contain antistatic agent.Further, in order to improve the anti-flammability of protective film Can, the reliability as encapsulation is improved, protective film forming layer 50 can also contain phosphate compound, bromine class compound, Phosphorusization Close the fire retardant of object etc..
In order to which the function as protective film is made effectively to play, the thickness of protective film forming layer 50 is preferably 3~300 μm, Particularly preferably 5~250 μm, further preferably 7~200 μm.
The gloss value in the first face 501 of protective film forming layer 50, preferably more than 25, particularly preferably more than 30.It is logical Crossing makes the gloss value in the first face 501 be more than 25, when carrying out laser lettering in the face, beautiful lettering that is excellent, and being formed With excellent visibility.In addition, the gloss value in this specification is according to JIS Z 8741:1997 and using gloss meter with Measure 60 ° of the angle value measured.
5. fixture adhering agent layer
The sheet for processing semiconductor of present embodiment can also be further equipped with fixture adhering agent layer.Fig. 8 is represents have The sectional view of the sheet for processing semiconductor 2 of the fixture second embodiment of adhering agent layer 60.In the sheet for processing semiconductor 2 In, fixture has the first face 601, and close to stripping film 30 with adhering agent layer 60 close to the side of semiconductor associated layer 80 Side has the second face 602.In addition, fixture adhering agent layer 60 is formed to correspond to the fixtures such as cyclic annular frame (ring frame) The shape of shape, is usually formed as ring-type.Thereby, it is possible to the adhesion strengths with semiconductor associated layer 80 independently to add semiconductor Work piece 2 is attached on the fixture of cyclic annular frame etc. and is positively fixed.
In the sheet for processing semiconductor 2 of second embodiment, as shown in figure 8, fixture contacts stripping film with adhesion coating 60 30 the first face 301.In addition, as shown in figure 8, there is no the centers of the sheet for processing semiconductor 2 of fixture adhering agent layer 60 Portion, the first face 301 of the second face 802 contact stripping film 30 of semiconductor associated layer 80.Here, partly leading in second embodiment In body processing piece 2, when batching sheet for processing semiconductor 2 for web-like, crimped concentrates on 60 institute of fixture adhering agent layer Existing position.It is accompanied by this, is also easily sticked together in fixture with the position present in adhering agent layer 60.Therefore, for half For whether conductor processing is unreeled well with piece 2 from volume, the of the first face 301 of stripping film 30 and fixture sticker 60 The adherence in two faces 602 generates great influence.Therefore, in sheet for processing semiconductor 2, by the of fixture adhering agent layer 60 Two faces 602 are provided as peeling force β with the peeling force on the interface in the first face 301 of stripping film 30.Specifically, peeling force β is set In the state of after first face 301 in the second face 602 of fixture adhering agent layer 60 and stripping film 30 is laminated, in regulation item Under part after 40 DEG C of keepings 3 days, stripping film 30 is to the fixture peeling force of adhering agent layer 60.On the other hand, about stripping Power α in the same manner as the sheet for processing semiconductor 1 of above-mentioned first embodiment, is provided as in the first face 101 of base material 10 and stripping film Peeling force on the interface in 30 the second face 302.
Fixture adhering agent layer 60 in present embodiment, can be made of individual layer, can be also made of 2 layers or more of multilayer, When being made up of multiple layers, preferably core material enters the composition at interval.
From the angle of the adhesion strength to fixtures such as cyclic annular frames, preferably comprise the sticker of fixture adhering agent layer 60 by The sticker of non-energy ray-curable is formed.As the sticker of non-energy ray-curable, preferably with required adhesion Power and releasable, such as acrylic compounds sticker, rubber sticker, organic silicon sticker, carbamic acid can be used Esters sticker, polyesters sticker, polyvinyl ether sticker etc., wherein, the preferably control of adhesion strength and releasable Easier acrylic compounds sticker.
As core material, resin film can be usually used, wherein, preferably polychloroethylene film, vinyl chloride copolymer film etc. is poly- Polyvinyl chloride-base film, particularly preferably polychloroethylene film.Even if polychloroethylene film softens when having heating, but still easily multiple during cooling Former property.Core thickness is preferably 2~200 μm, particularly preferably 5~100 μm.
From the angle of the adherence of the fixture to cyclic annular frame etc., fixture with the thickness of adhering agent layer 60 be preferably 5~ 200 μm, particularly preferably 10~100 μm.
Sheet for processing semiconductor 2 with fixture adhering agent layer 60, by putting down the arithmetic in the first face 101 of base material 10 Equal roughness Ra is 0.01~0.8 μm, and the flatness in the face becomes good, and at least base material 10 has the light of required wavelength High light line transmittance.Further, by making ratios (α/β) of the peeling force α than peeling force β for 0 less than 1.0, Neng Goufa Excellent resistance to blocking is waved, sheet for processing semiconductor 2 can be carried out well from unreeling in volume, and do not generate not when unreeling Desired stripping.It, can be with when using sheet for processing semiconductor 2 in addition, by making peeling force β for 10~1000mN/50mm Appropriate peeling force, by comprising base material 10, semiconductor associated layer 80 and fixture with the laminated body of adhering agent layer 60 from stripping film 30 Upper stripping.
It is 6. precut
The sheet for processing semiconductor of present embodiment, can be layer in addition to stripping film 30 be cut off be processed into it is required It is shape, so-called for the sheet for processing semiconductor for the state being pre-cut.That is, the sheet for processing semiconductor of present embodiment, Or and with shape different from stripping film 30 when overlooking and comprising base material 10 partly lead in stacking on the stripping film 30 of strip The sheet for processing semiconductor that the laminated body of body associated layer 80 forms.Fig. 9 be represent be pre-cut as from substrate side, The vertical view of the sheet for processing semiconductor 3 of third embodiment.In sheet for processing semiconductor 3, on the stripping film 30 of strip It is provided with laminated body (hereinafter sometimes referred to " the main use for being cut into circular base material 10a and semiconductor associated layer 80a Part ").It is configured on the long side direction of stripping film 30 multiple main using part.In addition, the long side direction of stripping film 30 Base material 10b and semiconductor associated layer 80b in a manner of not contacted with main use part and cut is provided on both ends Laminated body (hereinafter sometimes referred to " piece residual fraction ").In addition, Figure 10 is the sectional view for representing the line A-A along Fig. 9.
In the sheet for processing semiconductor 3 being pre-cut, also meet the above-mentioned physical property about sheet for processing semiconductor 1 Deng.In addition, as each layer for forming sheet for processing semiconductor 3, describing above about sheet for processing semiconductor 1 can be used Substance.
Furthermore, it is possible to the sheet for processing semiconductor 2 that will include above-mentioned fixture adhering agent layer 60, is made as implementing pre-cut The piece cut.In the piece, fixture adhering agent layer 60 is arranged on the main peripheral part for using part.
It is main to be attached to semiconductor die using part after being removed from stripping film 30 in sheet for processing semiconductor 3 On circle, semiconductor wafer etc..On the other hand, piece residual fraction prevents the crimped when batching sheet for processing semiconductor 3 for web-like It concentrates on and mainly uses part.
Typically for the sheet for processing semiconductor being pre-cut, easily occur when being unreeled from volume as mainly used portion The main substrate side using part of stripping or the stripping from stripping film is divided to be attached to the bad feelings on the second face of stripping film Condition.However, according to the sheet for processing semiconductor 3 of third embodiment, by the way that ratios (α/β) of the peeling force α than peeling force β is made to be 0, less than 1.0, can inhibit that such unfavorable condition occurs.In addition, the arithmetic in the first face 101 by making base material 10 Average roughness Ra is 0.01~0.8 μm, and the flatness in the face becomes good, and at least base material 10 has the light of required wavelength There is high light line transmittance.Further, by making peeling force β for 10~1000mN/50mm, when using sheet for processing semiconductor 3, Stripping film 30 can be removed from semiconductor associated layer 80 by appropriate peeling force.
7. the manufacturing method of sheet for processing semiconductor
The manufacturing method of sheet for processing semiconductor 1a comprising adhering agent layer 20 is not particularly limited, and can use common Method.As first example of the manufacturing method, first, prepare the sticker containing the material comprising adhering agent layer 20 and combine Object and the coating composition of solvent further as needed or decentralized medium.Then, using die coating machine, curtain coater, spraying The coating composition is coated on the first face 301 of stripping film 30 by machine, slit coater, knife type coater etc., so as to shape Into film.Further, by making the dried coating film, adhering agent layer 20 can be formed.Then, by by the first of adhering agent layer 20 Face 201 is bonded with the second face 102 of base material 10, so as to obtain sheet for processing semiconductor 1a.As long as coating composition energy It is enough coated, character is not particularly limited.The ingredient of adhering agent layer 20 is used to form, can contain as solute and apply In cloth composition, it can also contain in coating composition as decentralized medium.
When coating composition contains crosslinking agent (E), in order to, there are density formation cross-linked structure, also can be changed with required Above-mentioned drying condition (temperature, time etc.) or in addition setting heat treatment.It is usually logical in order to be sufficiently carried out cross-linking reaction It crosses above method etc. adhering agent layer is layered on base material, obtained sheet for processing semiconductor 1a is carried out for example 23 later DEG C, the curing of a couple of days is stood in the environment of relative humidity 50%.
Second example of the manufacturing method as sheet for processing semiconductor 1a, first, above-mentioned coating composition is applied Cloth is on the second face 102 of base material 10, so as to form film.Then, make the dried coating film, so as to be formed by base material 10 and adhesion The laminated body that oxidant layer 20 is formed.Further, by by the second face 202 of the adhering agent layer 20 of the laminated body, with stripping film 30 First face 301 is bonded, so as to obtain sheet for processing semiconductor 1a.
The manufacturing method of sheet for processing semiconductor 1b containing adhesion agent layer 40 is not particularly limited, and can use common Method.Such as pass through the adhesive composition that will contain the material comprising adhesion agent layer 40 and solvent further as needed Or the coating composition of decentralized medium is coated on the first face 301 of stripping film 30 and makes it dry, so as to form solid Layer 40.Then, by the way that the first face 401 of adhesion agent layer 40 is bonded with the second face 102 of base material 10, add so as to obtain semiconductor Work piece 1b.
The manufacturing method of sheet for processing semiconductor 1c comprising protective film forming layer 50 can refer to above-mentioned semiconductor machining It is manufactured with the manufacturing method of piece 1b.It particularly can be by that in the manufacturing method of sheet for processing semiconductor 1b, will contain There is the adhesive composition of the material of adhesion agent layer 40, be substituted for the protective film forming layer of the material containing protective film forming layer 50 Composition, so as to obtain sheet for processing semiconductor 1c.
The manufacturing method of sheet for processing semiconductor 1d comprising adhering agent layer 20 and adhesion agent layer 40 is not particularly limited, can To use common method.For example, by the adhesive composition containing the material comprising adhesion agent layer 40 and further according to need The solvent or the coating composition of decentralized medium wanted are coated on the first face 301 of stripping film 30 and make it dry, so as to shape Into adhesion agent layer 40.Thus the laminated body of stripping film 30 and adhesion agent layer 40 is obtained.Then, by the way that stripping film 30 is made from advance Into sheet for processing semiconductor 1a on remove, and by the adhesion agent layer 40 of the face of 20 side of adhering agent layer of exposing and above-mentioned laminated body The face paste of side is closed, so as to obtain sheet for processing semiconductor 1d.
Sheet for processing semiconductor 1e comprising adhering agent layer 20 and protective film forming layer 50 can add with reference to above-mentioned semiconductor Work is manufactured with the manufacturing method of piece 1d.It particularly can be by the manufacturing method of sheet for processing semiconductor 1d, inciting somebody to action The adhesive composition of material containing adhesion agent layer 40, the protective film for being substituted for the material containing protective film forming layer 50 are formed Layer composition, so as to obtain sheet for processing semiconductor 1e.
The sheet for processing semiconductor 2 of fixture adhering agent layer 60 is included, can be manufactured by common method.For example, It can be layered in by being formed into the fixture adhering agent layer 60 of required shape comprising base material 10 and semiconductor associated layer 80 Deng it is laminated body, with base material 10 for opposite side face on, so as to manufacture sheet for processing semiconductor 2.
In addition, when the sheet for processing semiconductor 2 comprising fixture adhering agent layer 60 is made the piece for precuting and forming, such as It can be manufactured in the following manner.It first, will be for forming fixture adhering agent layer 60 in the release surface of stripping film 30 Fixture sticker is formed as sheet.Then, to the sheet grippers sticker, as the fixture inner circumferential of adhering agent layer 60 The part of edge is cut off sheet grippers (hemisect) with sticker in a manner of remaining stripping film 30, and by the circle on the inside of it Part removes.Then, the piece of laminated body that will be made of the sheet grippers sticker and stripping film 30 that eliminate circular portion The face of shape fixture sticker side is attached to the half of the laminated body being made of base material 10 and semiconductor associated layer 80 in addition prepared On the face of 80 side of conductor associated layer.It obtains being sequentially laminated with stripping film 30, sheet grippers sticker, semiconductor attaching as a result, The laminated body of layer 80 and base material 10.Finally, to the laminated body, in a manner of remaining stripping film 30 by sheet grippers sticker, Semiconductor associated layer 80 and base material 10 are cut off (hemisect).At this point, outer peripheral edge by the way that fixture adhering agent layer 60 will be become Part is cut off (hemisect) in a manner of remaining stripping film 30, and unwanted part is removed, and is mainly made so as to be formed With part.Sheet grippers become cricoid fixture adhering agent layer 60 with sticker as a result,.In addition, it is used as main removing Position other than partial part carries out appropriate hemisect, can also form piece residual fraction.
The manufacturing method of sheet for processing semiconductor 3 being pre-cut is not particularly limited, and can use common method.
8. the application method of sheet for processing semiconductor
The sheet for processing semiconductor 1,2,3 of present embodiment, may serve as grinding back surface piece, cutting sheet etc..Use this During piece 1,2,3, it can be cut from piece back side illuminaton laser.In addition, overleaf after the process of grinding, cutting etc., energy Enough the shape of wafer, chip etc. is checked through the sheet for processing semiconductor of present embodiment 1,2,3.Further, it can also wear The sheet for processing semiconductor of present embodiment is crossed, and laser lettering is carried out to the back side of wafer, chip etc..
In addition, particularly including sheet for processing semiconductor 1b, 1d of adhesion agent layer 40, dicing die key may serve as Close piece.That is, by the cutting crystal wafer on sheet for processing semiconductor 1b, 1d and after being extended process as needed, institute is picked up Obtained chip can obtain assigning the chip for having adhesion agent layer.Further, by using half comprising protective film forming layer 50 Conductor processing piece 1c, 1e can form protective film at the back side of chip.At this point, in partly leading comprising protective film forming layer 50 Body processing is with attaching wafer, and cure protective film forming layer 50 on piece 1c, 1e.Then, on sheet for processing semiconductor 1c, 1e Cutting crystal wafer, and it is extended process as needed.Then, it by picking up obtained chip, can overleaf be formed There is the chip of protective film.
In order to take care of etc., the sheet for processing semiconductor 1,2,3 of present embodiment can be the state batched as web-like. The sheet for processing semiconductor 1,2,3 of present embodiment, even if being taken up like this, due to as described above, peeling force α compares peeling force The ratio (α/β) of β is for 0 less than 1.0, therefore, the adherence between the sheet for processing semiconductor 1,2,3 of present embodiment The adherence being not above between each layer for forming the sheet for processing semiconductor 1,2,3 of present embodiment.It is excellent therefore, it is possible to play Different resistance to blocking, and can carry out well from unreeling in the volume of the sheet for processing semiconductor 1,2,3 of present embodiment, into One step, the stripping occurred when can inhibit to unreel in undesirable interlayer.In addition, by putting down the arithmetic in the first face of base material 10 Equal roughness Ra is 0.01~0.8 μm, and the flatness in the face becomes good, and base material 10 has bloom to the light of required wavelength Line transmittance.Laser cutting, inspection and the laser lettering that as a result, it is possible to carry out being carried out by the back side as described above well. Further, since peeling force β is 10~1000mN/50mm, in the semiconductor machining that wafer is attached to present embodiment It, can be with appropriate peeling force, by the laminated body comprising base material 10 and semiconductor associated layer 80 from stripping film during on piece 1,2,3 It is removed on 30.
The implementation described above be for easy understanding the present invention and records, be not intended to limit of the invention And it records.Therefore, each element disclosed in the above embodiment, objective is also comprising the complete of the technical scope for belonging to the present invention The design alteration in portion and equipollent.
For example, it can be deposited between the base material 10 of sheet for processing semiconductor 1,2,3 and semiconductor associated layer 80 of present embodiment In other layers.
Embodiment
Hereinafter, the present invention is further illustrated by embodiment etc., but the scope of the present invention is not by these embodiments Deng restriction.
[embodiment 1]
(1) manufacture of base material
Method is film-made by calender to manufacture polychloroethylene film as base material.The arithmetic in the first face of the polychloroethylene film is put down Equal roughness Ra is 0.03 μm, and according to JIS K7161:1994 and measure 23 DEG C when MD directions tensile modulus of elasticity (Young's modulus) is 250MPa, and thickness is 80 μm.
In addition, the arithmetic average roughness Ra in the present embodiment is uses touch surface roughness meter (Mitsutoyo Corporation manufactures " SURFTEST SV-3000 ") and according to JIS B061:2013 measure at 10 points, and calculate it in face Value obtained from average value.
In addition, for above-mentioned base material monomer, lettering laser (wavelength is evaluated：Transmittance 532nm), stealthy cutting are used and are swashed Light (wavelength：Transmittance 1600nm) and inspection infrared ray (wavelength：Transmittance 1069nm), as a result, showing excellent Transmittance.
(2) preparation of stripping film
A face (the first face) for polyethylene terephthalate film is removed using using organic silicon remover Handle stripping film (Lintec Corporation manufactures, name of product " SP-PMF381031H ", the thickness formed：38 μm) make For stripping film.The arithmetic average roughness Ra in the first face of the stripping film is 0.03 μm, the arithmetic average roughness Ra in the second face It is 0.3 μm.
(3) preparation of adhesion agent composition (I)
Make 18.5 mass parts of 2-EHA (solid constituent converts, same as below), 75 mass of vinyl acetate Part, 1 mass parts of acrylic acid, 5 mass parts of methyl methacrylate, the copolymerization of 2 hydroxy methacrylate of methacrylic acid, 0.5 mass parts, obtain Weight average molecular weight is 600,000 acrylic copolymer.
Using obtained 100 mass parts of acrylic copolymer, the 2 function amino as energy ray-curable compound 60 mass parts of formic acid esters acrylate oligomer (Mw=8000), the 6 function amino first as energy ray-curable compound 60 mass parts of acid esters acrylate oligomer (Mw=2000), as Photoepolymerizationinitiater initiater Alpha-hydroxy cyclohexyl-phenyl ketone (bar Si Fu companies manufacture, name of product " IRGACURE184 ") 3 mass parts, the trimethylolpropane modified toluene two as crosslinking agent Isocyanates (TOSOH CORPORATION are manufactured, name of product " CORONATE L ") 1.6 mass parts mix in a solvent, from And obtain the coating solution of adhesion agent composition (I).
(4) manufacture of sheet for processing semiconductor
Using knife type coater, by the coating solution coating of adhesion agent composition (I) obtained in above-mentioned operation (3) upper On the first face for stating the stripping film manufactured in process (2).Then, it is handled 1 minute in 100 DEG C, while dried coating film is made, into Row cross-linking reaction, so as to obtain the laminated body being made of the adhering agent layer that stripping film and thickness are 10 μm.Further, by should First face of the adhering agent layer of laminated body, the second face paste of base material with being manufactured in above-mentioned operation (1) are closed, so as to obtain layer successively It is laminated with the sheet for processing semiconductor of base material, adhering agent layer and stripping film.Then, by the sheet for processing semiconductor in 23 DEG C of temperature, It is cured 7 days in the environment of relative humidity 50%.
[embodiment 2]
(1) manufacture of base material
Ethylene-methacrylic acid copolymer film is made by T-die film legal system and is used as base material.Ethylene-the metering system The arithmetic average roughness Ra in the first face of acid copolymer film is 0.05 μm, and according to JIS K7161:1994 and measure 23 DEG C When MD directions tensile modulus of elasticity (Young's modulus) for 130MPa, thickness is 80 μm.
In addition, about above-mentioned base material monomer, lettering laser (wavelength is evaluated：Transmittance 532nm), stealthy cutting are used and are swashed Light (wavelength：Transmittance 1600nm) and inspection infrared ray (wavelength：Transmittance 1069nm), as a result, showing excellent Transmittance.
(2) preparation of adhesion agent composition (II)
Make 99 mass parts of butyl acrylate, the copolymerization of 1 mass parts of acrylic acid, be 600,000 so as to obtain weight average molecular weight Acrylic copolymer.
Then, using obtained 100 mass parts of acrylic copolymer, two seasons as energy ray-curable compound Penta tetrol, six acrylate (Nippon Kayaku Co., Ltd.s manufacture, name of product " KAYARAD DPHA ") 120 mass parts, Alpha-hydroxy cyclohexyl-phenyl ketone (BASF AG manufactures, name of product " IRGACURE184 ") 3 matter as Photoepolymerizationinitiater initiater Measure part, trimethylolpropane modified toluene diisocyanate (TOSOH CORPORATION manufactures, ProductName as crosslinking agent Claiming " CORONATE L ") 17 mass parts mix in a solvent, so as to obtain the coating solution of adhesion agent composition (II).
(3) manufacture of sheet for processing semiconductor
In addition to use in the above described manner and manufacture, using ethylene-methacrylic acid copolymer as the base material of material and glue It other than agent composition (II), manufactures sheet for processing semiconductor in the same manner as example 1.
[embodiment 3]
(1) manufacture of base material
Vinyl-vinyl acetate copolymer film is made by T-die film legal system and is used as base material.The ethane-acetic acid ethyenyl The arithmetic average roughness Ra in the first face of ester copolymer film is 0.06 μm, and according to JIS K7161:1994 and measure 23 DEG C When MD directions tensile modulus of elasticity (Young's modulus) for 75MPa, thickness is 100 μm.
In addition, for above-mentioned base material monomer, lettering laser (wavelength is evaluated：Transmittance 532nm), stealthy cutting are used and are swashed Light (wavelength：Transmittance 1600nm) and inspection infrared ray (wavelength：Transmittance 1069nm), as a result, showing excellent Transmittance.
(2) preparation of adhesion agent composition (III)
Make 20 matter of 40 mass parts of 2-EHA, 40 mass parts of vinyl acetate and acrylic acid 2- hydroxy methacrylates Part copolymerization is measured, so as to obtain the acrylic copolymer that weight average molecular weight is 420,000.
Then, by making obtained 100 mass parts of acrylic copolymer and being used as energy content ray-curable group 30.2 mass parts of 2- methacryloxyethyls isocyanates (MOI) reaction of compound, energy is imported with so as to obtain side chain Measure the energy ray-curable polymer of ray-curable group (methylacryloyl).
Using obtained 100 mass parts of energy ray-curable polymer, the Alpha-hydroxy hexamethylene as Photoepolymerizationinitiater initiater Base phenyl ketone (BASF AG manufactures, name of product " IRGACURE184 ") 3 mass parts, the trihydroxy methyl third as crosslinking agent Alkane modified toluene diisocyanate (TOSOH CORPORATION are manufactured, name of product " CORONATE L ") 1.1 mass parts are molten It is mixed in agent, so as to obtain the coating solution of adhesion agent composition (III).
(3) manufacture of sheet for processing semiconductor
In addition to use in the above described manner and manufacture using vinyl-vinyl acetate copolymer as the base material of material and glue It other than agent composition (III), manufactures sheet for processing semiconductor in the same manner as example 1.
[embodiment 4]
(1) manufacture of base material
Polypropylene screen is made by T-die film legal system and is used as base material.The arithmetic average in the first face of the polypropylene screen is thick Rugosity Ra is 0.3 μm, and according to JIS K7161:1994 and measure 23 DEG C when MD directions tensile modulus of elasticity (Young mould Amount) it is 360MPa, thickness is 100 μm.
In addition, about above-mentioned base material monomer, lettering laser (wavelength is evaluated：Transmittance 532nm), stealthy cutting are used and are swashed Light (wavelength：Transmittance 1600nm) and inspection infrared ray (wavelength：Transmittance 1069nm), as a result, showing excellent Transmittance.
(2) manufacture of sheet for processing semiconductor
It is manufactured polypropylene is viscous as what is prepared in the base material of material and embodiment 2 in addition to using in the above described manner It other than agent composition (II), manufactures sheet for processing semiconductor in the same manner as example 1.
[embodiment 5]
(1) manufacture of stripping film
Using alcohol acids remover, to using a face of the organic silicon remover to polyethylene terephthalate film (the first face) carries out stripping film (Lintec Corporation manufactures, the name of product " SP- that lift-off processing forms PET381031 ", thickness：38 μm) another face (the second face) carry out lift-off processing.As the alcohol acids remover, use It is used to form what the setting alcohol acids peeling agent layer on a face of the polyethylene terephthalate film that thickness is 38 μm formed The alcohol acids of the alcohol acids peeling agent layer of stripping film (Lintec Corporation are manufactured, name of product " SP-PET38AL-5 ") Remover.The first face is obtained as a result, to carry out through alcohol acids remover through organic silicon remover progress lift-off processing and the second face The stripping film that lift-off processing forms.The arithmetic average roughness Ra in the first face of the stripping film is 0.03 μm, the arithmetic in the second face Average roughness Ra is 0.03 μm.
(2) manufacture of sheet for processing semiconductor
In addition to use in the above described manner and manufacture, the first face carry out lift-off processing and the second face through organic silicon remover It is carried out through alcohol acids remover other than the stripping film that lift-off processing forms, manufactures semiconductor in the same manner as example 1 and add Work piece.
[embodiment 6]
In addition to using, manufactured in embodiment 5, the first face carries out lift-off processing through organic silicon remover and the second face passes through Alcohol acids remover is carried out other than the stripping film that lift-off processing forms, and manufactures semiconductor machining in the same way as in example 2 With piece.
[embodiment 7]
(1) manufacture of stripping film
Using the alcohol acids remover identical with used in embodiment 6, to using organic silicon remover to poly- pair A face (the first face) for polyethylene terephthalate film carries out stripping film (the Lintec Corporation systems that lift-off processing forms It makes, name of product " SP-PET382150 ", thickness：38 μm) another face (the second face) carry out lift-off processing.It obtains as a result, The stripping that first face carries out lift-off processing through organic silicon remover and the second face is formed through alcohol acids remover progress lift-off processing From film.The arithmetic average roughness Ra in the first face of the stripping film is 0.03 μm, and the arithmetic average roughness Ra in the second face is 0.03μm。
(2) manufacture of sheet for processing semiconductor
In addition to use in the above described manner and manufacture, the first face carry out lift-off processing and the second face through organic silicon remover It is carried out through alcohol acids remover other than the stripping film that lift-off processing forms, manufactures semiconductor in the same way as in example 2 and add Work piece.
[embodiment 8]
(1) preparation of stripping film
A face (the first face) for polyethylene terephthalate film is removed using using organic silicon remover Handle stripping film (Lintec Corporation manufactures, name of product " SP-PET301031 ", the thickness formed：30 μm) make For stripping film.The arithmetic average roughness Ra in the first face of the stripping film is 0.03 μm, the arithmetic average roughness Ra in the second face It is 0.3 μm.
(2) preparation of adhesion agent composition (IV)
80 mass parts of butyl acrylate is made to be copolymerized with 20 mass parts of acrylic acid 2- hydroxy methacrylates, so as to obtain weight average molecular weight For 700,000 acrylic copolymer.
Then, by making obtained 100 mass parts of acrylic copolymer and being used as energy content ray-curable group 30.2 mass parts of 2- methacryloxyethyls isocyanates (MOI) reaction of compound, energy is imported with so as to obtain side chain Measure the energy ray-curable polymer of ray-curable group (methylacryloyl).
Using obtained 100 mass parts of energy ray-curable polymer, the Alpha-hydroxy hexamethylene as Photoepolymerizationinitiater initiater Base phenyl ketone (BASF AG manufactures, name of product " IRGACURE184 ") 3 mass parts, the trihydroxy methyl third as crosslinking agent Alkane modified toluene diisocyanate (TOSOH CORPORATION are manufactured, name of product " CORONATE L ") 0.5 mass parts are molten It is mixed in agent, so as to obtain the coating solution of adhesion agent composition (IV).
(3) manufacture of sheet for processing semiconductor
In addition to use in the above described manner and manufacture, thickness be 30 μm stripping film and adhesion agent composition (IV) other than, Sheet for processing semiconductor is manufactured in the same way as in example 2.
[embodiment 9]
(1) preparation of stripping film
Organic silicon remover is utilized to remove a face (the first face) for polyethylene terephthalate film Handle stripping film (Lintec Corporation manufactures, name of product " SP-PET501031 ", the thickness formed：50 μm) conduct Stripping film.The arithmetic average roughness Ra in the first face of the stripping film is 0.03 μm, and the arithmetic average roughness Ra in the second face is 0.3μm。
(2) manufacture of sheet for processing semiconductor
In addition to use in the above described manner and manufacture, other than thickness is 50 μm of stripping film, with side same as Example 8 Formula manufactures sheet for processing semiconductor.
[embodiment 10]
(1) manufacture of the first layer stack comprising adhesion agent layer
Following acrylate copolymer, heat-curing resin, filler, silane coupling agent and crosslinking agent are obtained by mixing and connect After agent composition, it is diluted in a manner that solid component concentration becomes 20 mass % using methyl ethyl ketone, so as to make The coating solution of standby adhesive composition.
Acrylate copolymer：The copolymerization being made of 95 mass parts of methyl acrylate and 5 mass parts of acrylic acid 2- hydroxy methacrylates Object (Mw：500,000, Mw/Mn：2.9, Tg：9 DEG C) 100 mass parts
Heat-curing resin：
(Nippon Kayaku Co., Ltd.s manufacture acryloyl group addition cresol novolak type epoxy resin, ProductName Claim " CNA-147 ") 30 mass parts
Thermal curing agents：Aralkyl-phenol resin (Mitsui Chemicals, Inc. manufactures, name of product " Milex XLC- 4L ") 6 mass parts
Filler：Methacryloxy be modified silica filler (0.05 μm of average grain diameter, Ya Dou agates company manufacture, 3- methacryloxypropyl trimethoxy silanes item for disposal) 35 mass parts
Silane coupling agent：(Mitsubishi Chemical Corporation. are manufactured, name of product " MKC SILICATE MSEP 2 ") 0.5 mass parts
Crosslinking agent：(TOSOH CORPORATION are manufactured aromatic series multicomponent isocyanate, name of product " CORONATE L ") 1.5 mass parts
What the peeling agent layer that preparation forms organic silicon on a face of polyethylene terephthalate (PET) film formed (Lintec Corporation are manufactured first stripping film, name of product " SP-PET381031 ", thickness：38 μm) and in PET film A face on formed organic silicon peeling agent layer form the second stripping film (Lintec Corporation manufacture, product Title " SP-PET381130 ", thickness：38μm).
Then, using knife type coater by the coating solution coating of above-mentioned adhesive composition the first stripping film stripping It on face, makes it dry, and the adhesion agent layer that thickness is 5 μm is formed in the release surface of the first stripping film.Then, by the second stripping The release surface of film is overlapped in adhesion agent layer so as to which the two be bonded, and is obtained by the first stripping film, adhesion agent layer (thickness：5μm)、 And second stripping film form first layer stack.Then, by the first layer stack 23 DEG C of temperature, relative humidity 50% environment Lower curing 7 days.
(2) manufacture of the second laminated body comprising adhering agent layer
It is dense with solid constituent after following adhesion host agent and crosslinking agent are mixed so as to obtain adhesion agent composition (V) Degree is diluted as the mode of 25 mass % using methyl ethyl ketone, so as to prepare the coating solution of adhesion agent composition (V).
Adhesion host agent：By (methyl) acrylate copolymer (The Nippon Synthetic Chemical Industry Co., Ltd.s manufacture, by 60 mass parts of 2-EHA, 30 mass parts of methyl methacrylate and propylene Copolymer obtained from sour 10 mass parts of 2- hydroxy methacrylates copolymerization, weight average molecular weight：600,000) 100 mass parts
Crosslinking agent：(three Jing Wu fields chemical companies manufacture the xylene diisocyanate addition product of trimethylolpropane, product Title " TAKENATE D11ON ") 20 mass parts
Prepare to form the stripping film (Lintec that the peeling agent layer of organic silicon forms on a face of PET film Corporation is manufactured, name of product " SP-PET381031 ", thickness：38 μm) as third stripping film.
In addition, using polypropylene screen as base material.About the polypropylene screen, the arithmetic average roughness Ra in the first face is 0.3 μm, thickness is 100 μm.
Then, using knife type coater by the coating solution coating of above-mentioned adhesion agent composition (V) in third stripping film It is made to carry out cross-linking reaction in release surface, while making it dry, so as to obtain by third stripping film, the adhesion that thickness is 5 μm The laminated body that oxidant layer is formed.Then, it is opposite side with third stripping film the second face of above-mentioned base material to be fitted in adhering agent layer Face on, so as to obtain the second laminated body being made of base material, adhering agent layer, third stripping film.By it in 23 DEG C of temperature, opposite It is cured 7 days in the environment of humidity 50%.
(3) manufacture of the third laminated body comprising fixture adhering agent layer
After the ingredient of following adhesion host agent and crosslinking agent is obtained by mixing fixture adhesion agent composition, with solid into Point concentration is diluted as the mode of 15 mass % using toluene, molten so as to prepare the coating of fixture adhesion agent composition Liquid.
Adhesion host agent：By (methyl) acrylate copolymer (by 69.5 mass parts of butyl acrylate, 30 matter of methyl acrylate Measure part and copolymer, weight average molecular weight obtained from the copolymerization of 0.5 mass parts of acrylic acid 2- hydroxy methacrylates：500,000) 100 mass Part
Crosslinking agent：(TOSOH CORPORATION are manufactured aromatic series multicomponent isocyanate, name of product " CORONATE L ") 5 mass parts
Prepare to form the 4th and the 5th stripping film that the peeling agent layer of organic silicon forms on a face of PET film (Lintec Corporation are manufactured, name of product " SP-PET381031 ", thickness：38 μm) and polyvinyl chloride as core material Film (Okamoto Industries, Inc. manufactures, thickness：50μm).
Then, using knife type coater by the coating solution coating of above-mentioned fixture adhesion agent composition in the 4th stripping film Release surface on and make it dry, be 5 μm of the first adhering agent layer so as to form thickness in the release surface of the 4th stripping film.With Afterwards, above-mentioned core material is fitted on the first adhering agent layer, thus obtained by core material, the first adhering agent layer and the 4th stripping film structure Into laminated body A.
Then, using knife type coater by the coating solution coating of above-mentioned fixture adhesion agent composition in the 5th stripping film Release surface on and make it dry, be 5 μm of the second adhering agent layer so as to form thickness in the release surface of the 5th stripping film.With Afterwards, the face of the exposing core material of above-mentioned laminated body A is fitted on the second adhering agent layer, thus obtained by the 4th stripping film/the first The third laminated body that the stripping film of the adhering agent layer of adhering agent layer/core material/second/the 5th is formed.Then, by the third laminated body in temperature It is cured 7 days in the environment of 23 DEG C of degree, relative humidity 50%.In the third laminated body, by the first adhering agent layer, core material, second Adhering agent layer forms the fixture adhering agent layer that thickness is 60 μm.
The manufacture of (4) the 4th laminated bodies
It is removed, and expose adhesion agent layer in the first layer stack that second stripping film is obtained from above-mentioned (1).The opposing party Face is removed, and expose adhering agent layer on the second laminated body for obtaining third stripping film from above-mentioned (2).With the sticker The mode that is contacted with above-mentioned adhesion agent layer of layer is bonded first layer stack and the second laminated body, thus obtain by base material, adhering agent layer, The 4th laminated body that adhesion agent layer, the first stripping film are laminated.
(5) manufacture of sheet for processing semiconductor
It is removed on the third laminated body that 5th stripping film is obtained from above-mentioned (3), and the side to remain the 4th stripping film Formula from the second adhering agent layer side by the partial cut of the inner peripheral of fixture adhering agent layer, and the circular portion of inside is removed. At this point, the inner peripheral diameter of fixture adhering agent layer 230mm is set as.
Removed on the 4th laminated body that first stripping film is obtained from above-mentioned (4), by the adhesion agent layer of exposing with the The fixture exposed on three laminated bodies is overlapped and is crimped with adhering agent layer.Then, so that the 4th stripping film of third laminated body Remaining mode from substrate side by the partial cut of the outer peripheral edge of sheet for processing semiconductor, and exterior portion is removed.At this point, The diameter of the outer peripheral edge of sheet for processing semiconductor 270mm has been set as.
In the above described manner, it has obtained on base material by adhering agent layer (thickness：5 μm), be layered in adhering agent layer and base material For in opposite side adhesion agent layer, be layered in adhesion agent layer is that annular clip on the peripheral part of opposite side is used with adhering agent layer Adhering agent layer and be layered in fixture adhering agent layer is semiconductor that the 4th stripping film in opposite side is formed with adhesion agent layer Processing piece.In addition, the arithmetic average roughness Ra in the face (the first face) of the fixture of the 4th stripping film adhering agent layer side is 0.03 μm, be 0.3 μm with the arithmetic average roughness Ra in face (the second face) that first face is opposite side.
[embodiment 11]
(1) manufacture of the cambial first layer stack of protective film is included
Following binder polymer, heat-curing resin, thermal activities potentiality epoxy curing agent, curing are promoted After agent, filler, colorant and silane coupling agent are obtained by mixing protective film formation layer composition, become 50 with solid component concentration The mode of quality % is diluted using methyl ethyl ketone, so as to prepare the coating solution that protective film forms layer composition.
Binder polymer：(methyl) acrylate copolymer is (by 10 mass parts of n-butyl acrylate, methyl acrylate 70 Mass parts, 5 mass parts of glycidyl methacrylate and copolymerization obtained from the copolymerization of 15 mass parts of acrylic acid 2- hydroxy methacrylates Object, weight average molecular weight：800,000, glass transition temperature：- 1 DEG C) 150 mass parts
Thermocurable ingredient：
(Mitsubishi Chemical Corporation. are manufactured bisphenol A type epoxy resin, name of product " jER828 ", 184~194g/eq of epoxide equivalent) 60 mass parts
(Mitsubishi Chemical Corporation. are manufactured bisphenol A type epoxy resin, name of product " jER1055 ", 800~900g/eq of epoxide equivalent) 10 mass parts
Dicyclopentadiene-type epoxy resin (DIC CORPORATION are manufactured, name of product " Epiclon HP-7200HH ", 255~260g/eq of epoxide equivalent) 30 mass parts
Thermal activities potentiality epoxy curing agent：(ADEKA CORPORATION are manufactured cyanoguanidine, name of product " ADEKA HARDENER-EH3636AS ", active hydrogen amount 21g/eq) 2 mass parts
Curing accelerator：2- phenyl -4,5- hydroxymethyl-imidazole (SHIKOKU CHEMICALS CORPORATION are manufactured, Name of product " CUREZOLE 2PHZ ") 2 mass parts
Filler：(Ya Dou agates company manufactures silica filler, name of product " SC2050MA " average grain diameter：0.5μm)320 Mass parts
Colorant：(Mitsubishi Chemical Corporation. are manufactured carbon black, name of product " #MA650 ", are put down Equal grain size：28nm) 1.2 mass parts
Silane coupling agent：(Shin-Etsu Chemical Co., Ltd.s manufacture, name of product " KBM-403 ") 2 mass parts
What the peeling agent layer that preparation forms organic silicon on a face of polyethylene terephthalate (PET) film formed (Lintec Corporation are manufactured first stripping film, name of product " SP-PET381031 ", thickness：38 μm) and in PET film A face on formed organic silicon peeling agent layer form the second stripping film (Lintec Corporation manufacture, product Title " SP-PET381130 ", thickness：38μm).
First, said protection film is formed into the coating solution coating of layer composition in the first stripping film using knife type coater Release surface on, and make it dry, so as to form the protective film forming layer that thickness is 25 μm in the release surface of the first stripping film. Then, the release surface of the second stripping film is overlapped on protective film forming layer and is bonded the two, so as to obtain by the first stripping Film, protective film forming layer (thickness：25 μm) and the second stripping film form first layer stack.By the first layer stack in temperature 23 DEG C, cure 7 days in the environment of relative humidity 50%.
(2) manufacture of sheet for processing semiconductor
Other than the first layer stack for using in the above described manner and manufacturing, half is manufactured in a manner of same as in Example 10 Conductor processing piece.
[embodiment 12]
(1) preparation of adhesion agent composition (VI)
By 68.5 mass parts of butyl acrylate, 30 mass parts of methacrylic acid, 0.5 mass parts of acrylic acid 2- hydroxy methacrylates, And the copolymerization of 1 mass parts of acrylamide, so as to obtain the acrylic copolymer that weight average molecular weight is 620,000.
Then, it is modified first using obtained 100 mass parts of acrylic copolymer, as the trimethylolpropane of crosslinking agent Phenylene diisocyanate (TOSOH CORPORATION are manufactured, name of product " CORONATE L ") 10 mass parts mix in a solvent, So as to obtain the coating solution of adhesion agent composition (VI).
(2) manufacture of sheet for processing semiconductor
Other than the adhesion agent composition (VI) for using in the above described manner and preparing, in the same manner as example 1 Manufacture sheet for processing semiconductor.
[comparative example 1]
In addition to will be shelled using organic silicon remover to a face (the first face) for polyethylene terephthalate film (Lintec Corporation are manufactured the stripping film formed from processing, name of product " SP-PET381031 ", thickness：38 μm) it uses Make other than stripping film, manufacture sheet for processing semiconductor in the same manner as example 1.In addition, the first face of the stripping film Arithmetic average roughness Ra is 0.03 μm, and the arithmetic average roughness Ra in another face (the second face) is 0.05 μm.
[comparative example 2]
In addition to will be shelled using organic silicon remover to a face (the first face) for polyethylene terephthalate film (Lintec Corporation are manufactured the stripping film formed from processing, name of product " SP-PET381031 ", thickness：38 μm) it uses Make other than stripping film, sheet for processing semiconductor is manufactured in a manner of same as Example 3.In addition, the first face of the stripping film Arithmetic average roughness Ra is 0.03 μm, and the arithmetic average roughness Ra in another face (the second face) is 0.05 μm.
[comparative example 3]
In addition to by the stripping film of polyethylene terephthalate film, (Resins Corporation of Mitsubishi manufactures, name of product " Diafoil (registered trademark) T-100 38 ", thickness：38 μm) as stripping film other than, make in the same way as in example 2 Manufacturing semiconductor processing piece.In addition, the arithmetic average roughness Ra on the stripping film two sides is 0.05 μm.
[test example 1] (measure of peeling force α)
The sheet for processing semiconductor severing manufactured in embodiment and comparative example is become into width 50mm × length 100mm.This When, so that the flow direction (MD directions) of sheet for processing semiconductor during fabrication has carried out severing for the mode of length direction.It will The sheet for processing semiconductor of severing has been carried out in this way, and 10 are laminated using base material as upside, and utilization width 75mm × The glass plate of length 15mm × thickness 5mm is from up and down clamping the laminated body.Then, the counterweight of 500g is being positioned in upside In the state of on glass plate, in 40 DEG C and be set as drying regime damp and hot promoters (ESPEC CORP. manufacture, name of product " SH641 ") it is 3 days certainly interior.In addition, when sheet for processing semiconductor contains the material of energy ray-curable, to laminated body into It has gone and has been taken care of in the state of shading.
It, will be positioned at this of outermost sheet for processing semiconductor and the sheet for processing semiconductor being adjacent after keeping 2 chip semiconductor processing are separated by the use of piece using the state being overlapped as measurement sample from above-mentioned laminated body.Then, will be located at should The outermost stripping film stripping of measurement sample, and the bonding plane of exposing is fitted in stainless steel plate using double-sided adhesive tape On, and it is fixed on universal tensile testing machine (ORIENTEC Co., LTD manufactures, name of product：TENSILON UTM-4-100) On.Then, it under conditions of 23 DEG C of temperature, relative humidity 50%RH, will be used positioned at away from the farthest semiconductor machining of stainless steel plate Piece along 180 ° of directions with tensile speed 300mm/ minutes, is removed from the sheet for processing semiconductor overlapped.That is, in base material The first face and stripping film the second face between removed.Power at this time is measured, and is denoted by peeling force α (mN/ 50mm).Show the result in table 2.In addition, peeling force α it is small to unmeasured degree or before the assay stripping film from base material During upper stripping, measurement result is evaluated as " can not measure (0) ".
[test example 2] (measure of peeling force β)
The laminated body being made of 10 chip semiconductor processing with piece is manufactured in a manner of identical with above-mentioned test example 1, at 40 DEG C Lower keeping 3 days.1 chip semiconductor processing is taken out with piece from the laminated body, using double-sided adhesive tape by the first face of base material Fitting on stainless steel, and is fixed on universal tensile testing machine (ORIENTEC Co., LTD manufactures, name of product： TENSILON UTM-4-100) on.Then, under conditions of 23 DEG C of temperature, relative humidity 50%RH, along 180 ° of directions to stretch Speed is only removed stripping film for 300mm/ minutes.That is, it is shelled between the first face of stripping film and the second face of sticker From.Power at this time is measured, and is denoted by peeling force β (mN/50mm).Show the result in table 2.Further, based on the peeling force The peeling force α measured in β and test example 1 calculates ratios (α/β) of the peeling force α than peeling force β.At this point, the measure of peeling force α When being as a result " can not measure (0) ", ratio (α/β) is evaluated as " 0 ".Show the result in table 2.
[test example 3] (evaluation unreeled from volume)
Prepare the sheet for processing semiconductor manufactured in embodiment and comparative example, the strip sheet as the width with 290mm. Then, notch is cut from substrate side, is formed as illustrated in fig. 9 circular main using part and piece residual fraction.At this point, only will Layer cut-out (hemisect) in addition to stripping film, in addition, mainly using a diameter of 270mm of part.Then, main use will be removed Part and piece residual fraction other than base material and adhering agent layer (also there are it is other when, then be adhesion agent layer or protective film forming layer) Removal.It is obtained as a result, with 100 main sheet for processing semiconductor for using part.By the sheet for processing semiconductor, with base material The mode that side becomes outside is batched as web-like.
By obtained web-like sheet for processing semiconductor, in 40 DEG C and it is set as the damp and hot promoters of drying regime Keeping 3 days in (ESPEC CORP. are manufactured, name of product " SH641 ").Consolidate in addition, sheet for processing semiconductor contains energy-ray During the material for the property changed, laminated body is being carried out to be taken care of in the state of shading.
After keeping, using wafer laminator, (Lintec Corporation are manufactured, name of product " RAD-2500m/ 8 ") sheet for processing semiconductor batched as web-like is unreeled.Then, for the both ends of the length direction of sheet for processing semiconductor 20 of portion it is main using present in part region (that is, the exterior portion of volume there are 20 main regions using part, And the regions that part is mainly used there are 20 of inboard portion), it is confirmed whether good to unreel.At this point, 20 main Using part zero can be assessed as in any region continuously and when unreeling well.On the other hand, even if 1 main use Second face of the peeling-off film in part and the be overlapped main unfavorable condition using part adherence so as to unreel under it When, be also assessed as ×.Show the result in table 2.
[test example 4] (evaluation of fitting)
Web-like sheet for processing semiconductor is manufactured in a manner of identical with above-mentioned test example 3 and has been taken care of at 40 DEG C 3 days.With Afterwards, using wafer laminator (Lintec Corporation are manufactured, name of product " RAD-2500m/8 "), portion will mainly be used Divide and removed from the stripping film of the volume, and this is mainly attached into (fitting) on a semiconductor wafer using part.Continuously repeat this Operation 20 times, when completing well, is assessed as zero.On the other hand, it is removed from stripping film using part due to mainly bad etc. And generate fitting it is bad when, be assessed as ×.Show the result in table 2.
The composition of the sheet for processing semiconductor manufactured in embodiment and comparative example is arranged in table 1.In addition, what table 1 was recorded Dummy suffix notation in detail as shown below.
[base material]
·PVC：Polyvinyl chloride
·EMAA：Ethylene-methacrylic acid copolymer
·EVA：Vinyl-vinyl acetate copolymer
·PP：Polypropylene
[stripping film]
·PET：Polyethylene terephthalate
[test example 5] (the radioparent evaluation of light)
Using chip laminator (Lintec Corporation are manufactured, name of product " RAD-2500m/8 "), by test example The sheet for processing semiconductor that keeping in 3 days is completed in 3 is attached to cyclic annular frame on the minute surface for the Silicon Wafer that thickness is 350 μm.With Afterwards, using cutter device (DISCO Inc. are manufactured, name of product " DFD-651 "), Silicon Wafer is carried out under the following conditions Cutting.
Cutting condition：
Workpiece (cut-off object)：Silicon Wafer (size：6 inches, thickness：350 μm, attach face：Minute surface)
Cutting blade：DISCO Inc. are manufactured, name of product " 27HECC "
Blade revolution：30,000rpm
Cutting speed：10mm/ seconds
Notch depth：The notch until 20 μm of the depth is started with cutter device platform for opposing face from base material
Cut lengths：5mm×5mm
For as obtained from above-mentioned cutting, the chip that is attached on sheet for processing semiconductor, from semiconductor machining It is opposite face (the second face of base material) side with piece and chip, is confirmed whether energy through sheet for processing semiconductor by visual observation Enough recognize the peripheral part and corner of chip.In addition, about the situation for having used the sheet for processing semiconductor for having adhesion agent layer, it is right In the chip with solid, its peripheral part and corner are confirmed；Has the cambial semiconductor machining of protective film about having used With the situation of piece, for having the chip of protective film, its peripheral part and corner are confirmed.It will confirm the feelings in peripheral part and corner Condition is assessed as light transmittance (luminous ray transmittance) well (zero), and the situation that will be unable to confirm is assessed as light transmittance (luminous ray transmittance) bad (×).Show the result in table 2.
[table 1]
[table 2]
By table 2 it will be apparent that, the sheet for processing semiconductor of embodiment radioparent simultaneously with excellent light, from It unreeling in volume and is bonded these two aspects and has also obtained excellent evaluation.On the other hand, the sheet for processing semiconductor of comparative example exists Unfavorable condition is produced in either side from unreeling in volume and in being bonded.
Industrial applicibility
The sheet for processing semiconductor of the present invention, such as be suitable for use as cutting sheet, dicing die bonding pad, protective film and formed One-piece type cutting sheet of layer etc..
Reference sign
1、1a、1b、1c、1d、1e、2、3：Sheet for processing semiconductor；
10、10a、10b：Base material；
101：First face；
102：Second face；
20：Adhering agent layer；
201：First face；
202：Second face；
30：Stripping film；
301：First face；
302：Second face；
40：Adhesion agent layer；
401：First face；
402：Second face；
50：Protective film forming layer；
501：First face；
502：Second face；
60：Fixture adhering agent layer；
601：First face；
602：Second face；
80、80a、80b：Semiconductor associated layer；801：First face；
802：Second face.

Claims (10)

1. a kind of sheet for processing semiconductor, at least has：Base material, have the first face and positioned at first face be phase The second face tossed about；Semiconductor associated layer is laminated in the second surface side of the base material, and close to the side of the base material With the first face, there is the second face in the side far from the base material；And stripping film, it is laminated in the semiconductor associated layer The second surface side, and there is the first face close to the side of the semiconductor associated layer, far from the semiconductor associated layer Side has the second face, it is characterised in that：
The arithmetic average roughness Ra in the first face of the base material is 0.01~0.8 μm,
It is after the second face of the first face of the base material and the stripping film is laminated and is taken care of 3 days at 40 DEG C, described Peeling force on the interface in the first face of base material and the second face of the stripping film is provided as α, and by the semiconductor associated layer First face paste of second face and the stripping film is attached and after being taken care of 3 days at 40 DEG C, in the semiconductor associated layer When peeling force on the interface in the first face of the second face and the stripping film is provided as β, ratios (α/β) of the α than β is more than 0 and small In 1.0,
The peeling force β is 10~1000mN/50mm.
2. sheet for processing semiconductor according to claim 1, which is characterized in that the arithmetic in the second face of the stripping film is put down Equal roughness Ra is 0.02~0.8 μm.
3. sheet for processing semiconductor according to claim 1 or 2, which is characterized in that the stripping film is in its first surface side And second surface side have peeling agent layer respectively.
4. sheet for processing semiconductor according to any one of claim 1 to 3, which is characterized in that the semiconductor attaches Layer is adhering agent layer.
5. sheet for processing semiconductor according to any one of claim 1 to 3, which is characterized in that the semiconductor attaches Layer is adhesion agent layer.
6. sheet for processing semiconductor according to any one of claim 1 to 3, which is characterized in that the semiconductor attaches Layer is protective film forming layer.
7. sheet for processing semiconductor according to any one of claim 1 to 3, which is characterized in that the semiconductor attaches Layer is made of adhering agent layer and the adhesion agent layer between the adhering agent layer and the stripping film.
8. sheet for processing semiconductor according to any one of claim 1 to 3, which is characterized in that the semiconductor attaches Protective film forming layer of the layer by adhering agent layer and between the adhering agent layer and the stripping film is formed.
9. sheet for processing semiconductor according to any one of claim 1 to 8, which is characterized in that the semiconductor machining It is formed with piece by the stripping film top laminate stack in strip, which has different from the stripping film when overlooking Shape, and include the base material and the semiconductor associated layer.
10. a kind of sheet for processing semiconductor, at least has：Base material, have the first face and positioned at first face be phase The second face tossed about；Semiconductor associated layer is laminated in the second surface side of the base material, and close to the side of the base material With the first face, there is the second face in the side far from the base material；Fixture adhering agent layer is laminated in the semiconductor Second surface side of associated layer, and there is the first face close to the side of the semiconductor associated layer, it is pasted far from the semiconductor The side of attached layer has the second face；And stripping film, at least it is laminated in the second surface side of the fixture adhering agent layer, and There is the first face close to the side of the fixture adhering agent layer, have second in the side far from the fixture adhering agent layer Face, it is characterised in that：
The arithmetic average roughness Ra in the first face of the base material is 0.01~0.8 μm,
It is after the second face of the first face of the base material and the stripping film is laminated and is taken care of 3 days at 40 DEG C, described Peeling force on the interface in the first face of base material and the second face of the stripping film is provided as α, and by the fixture adhering agent layer The second face and the stripping film the first face paste it is attached and after being taken care of 3 days at 40 DEG C, in the fixture adhering agent layer When peeling force on the interface in the first face of the second face and the stripping film is provided as β, ratios (α/β) of the α than β is more than 0 and small In 1.0,
The peeling force β is 10~1000mN/50mm.
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