TW201802897A - Semiconductor processing sheet - Google Patents

Abstract

This semiconductor processing sheet 1 comprises at least a substrate 10, a semiconductor bonding layer 80, and a peeling film 30, wherein: a first surface 101 of the substrate 10 has an arithmetic mean roughness Ra from 0.01 to 0.8 [mu]m; and if [alpha] is defined as the peeling force at the interface between the first surface 101 of the substrate 10 and a second surface 302 of the peeling film 30 and [beta] is defined as the peeling force at the interface between a second surface 802 of the semiconductor bonding layer 80 and a first surface 301 of the peeling film 30, the value ([alpha]/[beta]) of the ratio of [alpha] to [beta] is 0 or greater to less than 1.0, and the peeling force [beta] is from 10 to 1000 mN/50 mm. This semiconductor processing sheet 1 has excellent light transmissibility, and blocking is less likely to occur.

Description

Semiconductor processing plate

The present invention relates to a plate for semiconductor processing.

When manufacturing a semiconductor wafer from a semiconductor wafer, a plate for semiconductor processing, such as a dicing sheet, a back-grinding sheet, etc. is generally used. In recent years, such a semiconductor processing plate is required to have transmittance for light having a desired wavelength (hereinafter referred to as "light transmittance").

For example, in recent years, the use of thinner silicon wafers and glass wafers has increased. When these wafers are diced using a blade, wafer defects such as edge chipping and chip cracking easily occur. Therefore, when these wafers are used, after the dicing is completed, the wafer is inspected from the surface of the wafer contacting the semiconductor processing plate across the semiconductor processing plate in a state where the wafer is attached to the semiconductor processing plate. shape. In order to perform this inspection satisfactorily, it is necessary to transmit light to inspect the sheet for semiconductor processing.

In addition, when thinning a thin wafer, there is a concern of edge cracking and the like if full cutting is to be performed using a blade. Prior to use, the wafer is first cut into half, and then back-grinded. Dicing method: a method of using a laser light to provide a modified layer inside the wafer, and then performing a backside grinding to separate the wafer into pieces, such as a stealth dicing method.

During stealth dicing, laser light is irradiated inside the wafer After the modified layer is formed, there is a risk that the wafer may be damaged due to the pressure of the attachment when it is attached to a semiconductor processing board. In order to avoid this risk, after the wafer is attached to the semiconductor processing plate in advance, the wafer is irradiated with laser light across the semiconductor processing plate to form a modified layer. At this time, in order to illuminate the laser light well, the semiconductor processing sheet must transmit the laser light.

In addition, when a wafer is packaged with a flip chip, a product surface, a lot number, and the like are usually laser-printed on the back surface of the wafer. In order to perform such laser printing, a step of transferring a wafer whose back surface has been ground to a laser printing device is provided. In recent years, the use of thinned wafers has a higher risk of wafer cracks during handling. In order to avoid this risk, it is conceived that the thinned wafer is transferred while being attached to a semiconductor processing plate, and laser light is irradiated over the semiconductor processing plate to perform printing. In order to perform the laser printing satisfactorily, the plate for semiconductor processing must transmit laser light.

In addition, when a protective film is provided on the back surface of the wafer, laser printing may be performed on the protective film. At this time, the protective film-forming layer of the semiconductor processing sheet including the protective film-forming layer is printed by irradiating laser light over the substrate, the adhesive layer, and the like of the semiconductor processing sheet. In this case, in order to perform laser printing satisfactorily, it is necessary for the base material of the semiconductor processing sheet, the adhesive layer, and the like to transmit laser light.

The sheet for semiconductor processing generally includes a base material and an adhesive layer laminated on one surface of the base material. In addition, for the purpose of protecting the adhesive layer until the semiconductor processing plate is used, a release film may be provided on the adhesive layer. For example, Patent Documents 1 and 2 describe a board for semiconductor processing in which a substrate, an adhesive layer, and a release film are laminated in the following order. sheet. In addition, depending on the application of the sheet for semiconductor processing, other layers such as an adhesive layer and a protective film-forming layer may be provided between the adhesive layer and the release film.

Prior art literature Patent literature

[Patent Document 1] No. 8-1220 of Shikai, Japan

[Patent Document 2] Shikaihei 2-146144, Japan

In a semiconductor processing plate, excellent light transmittance of light having a desired wavelength can be achieved by improving the light transmittance of the substrate and the adhesive layer, respectively. For example, this can be achieved by improving the smoothness of the surface of the substrate side of the semiconductor processing sheet, that is, the surface of the substrate opposite to the adhesive layer.

However, if the smoothness of the surface of the substrate side of a semiconductor processing sheet is improved in order to obtain a semiconductor processing sheet having high light transmittance, sticking tends to occur. That is, when a long sheet of semiconductor processing is wound into a roll shape, the sheets for semiconductor processing are likely to adhere to each other. Once such adhesion occurs, it becomes difficult to unwind the semiconductor processing sheet from the roll, or peeling occurs at an unwanted interface (for example, the interface between the adhesive layer and the release film). In addition, when the substrate for semiconductor processing is pre-cut by combining the base material and the adhesive layer with the shape of the wafer, once such adhesion occurs, when the semiconductor processing plate is rolled out of the roll, the substrate is generated. Laminates of wood and adhesive layer peel off The film is peeled, and the base material side of the laminated body after this peeling has the disadvantages of sticking to the back surface of the peeling film and the like.

Here, Patent Documents 1 and 2 disclose that embossing is performed on the surface of the release film on the side opposite to the adhesive layer. The purpose is to avoid rolling the sheet for semiconductor processing into a roll shape. Air is sandwiched between the semiconductor processing plates.

On the other hand, the substrates for semiconductor processing disclosed in Patent Documents 1 or 2 do not have a high smoothness on the substrate-side surface, and cannot be used for inspection or laser transmission through the semiconductor processing plates as described above. Cutting, stealth cutting, laser printing, etc.

The present invention has been made in view of the above-mentioned actual situation, and an object thereof is to provide a semiconductor processing plate having excellent light transmittance and less prone to adhesion.

In order to achieve the above object, first, the present invention provides a sheet for semiconductor processing, which is provided with at least the following sheet for semiconductor processing: a substrate having a first surface and located on an opposite side to the first surface A second surface; a semiconductor attachment layer which is laminated on the second surface side of the substrate, has a first surface on a proximal end side of the substrate, and has a second surface on a distal end side of the substrate; And a release film, which is laminated on the second surface side of the semiconductor attaching layer, has a first surface on a proximal end side of the semiconductor attaching layer, and has a second surface on a distal end side of the semiconductor attaching layer; It is characterized in that the arithmetic average roughness Ra of the first surface of the substrate is 0.01 to 0.8 μm, the first surface of the substrate and the second surface in the release film are laminated and stored at 40 ° C. for 3 days. Then, the peeling force at the interface between the first surface of the substrate and the second surface of the release film is set to α , and the second surface of the semiconductor adhesive layer and the first surface of the release film are adhered to each other and Peeling force at the interface between the second surface of the semiconductor adhesive layer and the first surface of the release film after storage at 40 ° C for 3 days When for β, α beta] than the value of (α / β) is 0 or more and less than 1.0, the peel force is beta] 10 ~ 1000mN / 50mm (invention 1).

According to the above-mentioned invention (Invention 1), since the arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 μm, the smoothness of the surface on the substrate side becomes good and the substrate has a desired wavelength of light. With high light transmission. Furthermore, since the ratio ( α / β ) of the ratio of the peeling force α to the peeling force β is 0 or more and less than 1.0, compared with the adhesion between the layers constituting the sheet for semiconductor processing, it becomes a coil during winding. The state of adhesion between the plates for semiconductor processing in the state after the object does not become high, and excellent adhesion resistance can be exhibited. Thereby, it is possible to perform the unwinding well without peeling off at an unintended interface during the unwinding. In addition, since the peeling force β is 10 to 1000 mN / 50 mm, when a sheet for semiconductor processing is used, the laminated body including the substrate and the semiconductor bonding layer can be peeled from the peeling film by an appropriate peeling force.

In the above invention (Invention 1), the arithmetic average roughness Ra of the second surface of the release film is preferably 0.02 to 0.8 μm (Invention 2).

In the above invention (Inventions 1 and 2), the release film is preferably provided with a release agent layer on each of the first surface side and the second surface side (Invention 3).

In the above inventions (Inventions 1 to 3), the semiconductor bonding layer may be an adhesive layer (Invention 4).

In the above inventions (Inventions 1 to 3), the semiconductor attachment layer may be an adhesive layer (Invention 5).

In the above inventions (Inventions 1 to 3), the semiconductor attaching layer may be a protective film forming layer (Invention 6).

In the above inventions (Inventions 1 to 3), the semiconductor attaching layer may be composed of an adhesive layer and an adhesive layer located between the adhesive layer and the release film (Invention 7).

In the above inventions (Inventions 1 to 3), the semiconductor attaching layer may be composed of an adhesive layer and a protective film forming layer located between the adhesive layer and the release film (Invention 8).

In the above inventions (Inventions 1 to 8), the semiconductor processing sheet may be a long strip of the release film, and when laminated in a plan view, it has a shape different from that of the release film and includes the substrate and the semiconductor patch Laminated laminated body (Invention 9).

Secondly, the present invention provides a sheet for semiconductor processing, which is provided with at least the following sheet for semiconductor processing: a substrate having a first surface and a second surface on a side opposite to the first surface; A semiconductor attachment layer, which is laminated on the second surface side of the substrate, has a first surface on the proximal side of the substrate, and has a second surface on the distal side of the substrate; an adhesive for jigs A layer laminated on the second surface side of the semiconductor attaching layer described above, having a first surface on a proximal end side of the semiconductor attaching layer and a second surface on a distal end side of the semiconductor attaching layer; and The release film is laminated on at least the second surface side of the adhesive layer for the jig, and has a first surface on the proximal side of the adhesive layer for the jig, and is far away from the adhesive layer for the jig. The end side has a second surface; the arithmetic average roughness Ra of the first surface of the substrate is 0.01 to 0.8 μm, and the first surface of the substrate and the second surface of the release film are laminated. The peeling force at the interface between the first surface of the substrate and the second surface of the release film after storage at 40 ° C for 3 days is set to α , and The second surface of the adhesive layer for the jig and the first surface of the release film were adhered and the second surface of the adhesive layer for the jig and the first surface of the release film after being stored at 40 ° C for 3 days. When the peeling force at the interface is set to β , the value of the ratio of α to β ( α / β ) is 0 or more and less than 1.0, and the peeling force β is 10 to 1000 mN / 50 mm (Invention 10).

According to the present invention, it is possible to provide a sheet for semiconductor processing which has excellent light transmittance and does not easily cause adhesion.

1.1a, 1b, 1c, 1d, 1e, 2, 3‧‧‧ semiconductor processing plates

10, 10a, 10b ‧‧‧ substrate

101‧‧‧Part 1

102‧‧‧Part 2

20‧‧‧ Adhesive layer

201‧‧‧Part 1

202‧‧‧Part 2

30‧‧‧ peeling film

301‧‧‧Part 1

302‧‧‧Part 2

40‧‧‧ Adhesive layer

401‧‧‧Part 1

402‧‧‧Part 2

50‧‧‧ protective film forming layer

501‧‧‧Part 1

502‧‧‧side 2

60‧‧‧Adhesive layer for jig

601‧‧‧Part 1

602‧‧‧Part 2

80, 80a, 80b‧‧‧Semiconductor attachment layer

801‧‧‧Part 1

802‧‧‧Part 2

FIG. 1 is a cross-sectional view of a semiconductor processing plate according to a first embodiment of the present invention.

Fig. 2 is a cross-sectional view showing a state in which the semiconductor processing plates according to the first embodiment of the present invention are overlapped.

Fig. 3 is a cross-sectional view of a semiconductor processing plate according to a first aspect of the first embodiment of the present invention.

Fig. 4 is a cross-sectional view of a semiconductor processing plate according to a second aspect of the first embodiment of the present invention.

Fig. 5 is a cross-sectional view of a semiconductor processing plate according to a third aspect of the first embodiment of the present invention.

Fig. 6 is a sectional view of a semiconductor processing plate according to a fourth aspect of the first embodiment of the present invention.

Fig. 7 is a semiconductor processing according to a fifth aspect of the first embodiment of the present invention; Top view of the plate.

Fig. 8 is a cross-sectional view of a semiconductor processing plate according to a second embodiment of the present invention.

Fig. 9 is a sectional view of a semiconductor processing plate according to a third embodiment of the present invention.

Fig. 10 is a sectional view taken along line A-A in Fig. 9.

Forms used to implement the invention

Hereinafter, embodiments of the present invention will be described.

Fig. 1 shows a semiconductor processing plate 1 according to a first embodiment. The semiconductor processing sheet 1 is configured by laminating a substrate 10, a semiconductor attaching layer 80, and a release film 30 in the following order. The substrate 10 has a first surface 101 on a distal end side of the semiconductor attaching layer 80 and a second surface 102 on a proximal end side of the semiconductor attaching layer 80. The semiconductor attaching layer 80 has a first surface 801 on the proximal end side of the substrate 10 and a second surface 802 on the proximal end side of the release film 30. The release film 30 has a first surface 301 on a proximal end side of the semiconductor attaching layer 80 and a second surface 302 on a distal end side of the semiconductor attaching layer 80.

In the plate 1 for semiconductor processing of this embodiment, the arithmetic average roughness Ra of the first surface 101 of the base material 10 is 0.01 to 0.8 μm. Since the first surface 101 of the base material 10 is so smooth, the light after the first surface 101 is irradiated can be scattered on this surface, and high light transmittance can be exhibited on the base material 10.

In the semiconductor processing sheet 1 according to this embodiment, the value ( α / β ) of the ratio of the peeling force α to the peeling force β is 0 or more and less than 1.0. Here, the peeling force α is a peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 as described later; and the peeling force β is a semiconductor attaching layer 80 as described later. The peeling force at the interface between the second surface 802 and the first surface 301 of the release film 30. As a result, compared with the adhesion between the layers constituting the semiconductor processing sheet 1, the semiconductor processing sheet 1 in the state where the semiconductor processing sheet 1 is wound into a roll shape is denser than the adhesion between the layers. The adhesion does not become high, and excellent blocking resistance can be exhibited. Therefore, it is possible to perform the unwinding well, and at the time of the unwinding, peeling does not occur at an unwanted interface.

In addition, in the semiconductor processing sheet 1 of this embodiment, the peeling force β is 10 to 1000 mN / 50 mm. Thereby, when using a board for semiconductor processing, a peeling film can be peeled from the laminated body containing a base material and a semiconductor bonding layer by an appropriate peeling force.

1. Physical properties of semiconductor processing plates

In the semiconductor processing sheet 1 of this embodiment, the peeling force at the interface between the first surface 101 of the base material 10 and the second surface 302 of the release film 30 is set to α , and the second When the peeling force at the interface between the surface 802 and the first surface 301 of the release film 30 is β , the value of the ratio of α to β ( α / β ) is 0 or more, preferably 0.05 or more, and particularly preferably 0.1 or more. The value of this ratio ( α / β ) is less than 1.0, preferably 0.5 or less, and particularly preferably 0.2 or less. Here, the peeling force α means that the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 are laminated and stored in a dry state at 40 ° C. for 3 days, and then the release film 30 is applied to the substrate 10. Peeling force. The peeling force β refers to the state where the second surface 802 of the semiconductor attaching layer 80 and the first surface 301 of the release film 30 are attached, and the release film 30 is stored in a dry state at 40 ° C. for 3 days. Peeling force to the semiconductor attaching layer 80. When the above-mentioned ratio ( α / β ) is 0, it means that when the value of the peeling force α is 0, the peeling force is too small to be measured, or the peeling film 30 has been removed from the substrate 10 before the measurement. Peeled state. When the ratio of the peeling force α to the peeling force β ( α / β ) is 0 or more and less than 1.0, as shown in FIG. 2, when the semiconductor processing plates 1 are overlapped with each other, the semiconductor processing plates 1 are compared with the components for semiconductor processing. The adhesion between the layers of the sheet does not increase the adhesion between the sheets 1 for semiconductor processing. Specifically, compared with the adhesiveness between the substrate 10 and the semiconductor adhesive layer 80, the adhesiveness between the semiconductor adhesive layer 80 and the release film 30, and the like, the first surface 101 of the substrate 10 and The adhesion between the second surface 302 of the peeling film 30 facing it does not become high. Thereby, excellent adhesion resistance can be exhibited, and when the semiconductor processing sheet 1 rolled up and rolled into a roll shape is rolled out, the first surface 101 of the substrate 10 of the semiconductor processing sheet 1 and The second surface 302 of the release film 30 of the semiconductor processing sheet 1 which is superposed thereon is not adhered. In addition, it is possible to suppress peeling of the semiconductor processing sheet 1 at an unintended interface during the unwinding. With this, the semiconductor processing sheet 1 can be rolled out satisfactorily.

In this specification, the peeling force β is defined as the peeling force at the interface between the peeling film 30 and the main layer in contact with the peeling film 30. For example, in the above-mentioned semiconductor processing sheet 1, since the release film 30 is in contact with the semiconductor attaching layer 80, the release force β at the interface between the semiconductor attaching layer 80 and the release film 30 is defined. On the other hand, in a semiconductor processing plate 2 (refer to FIG. 8) provided with a second embodiment of a jig adhesive layer 60 described later, the semiconductor bonding layer 80 and the jig adhesive layer 60 are simultaneously contacted and peeled off. Film 30. Here, the contact between the peeling film 30 and the adhesive layer 60 for the jig is compared with the contact between the peeling film 30 and the semiconductor adhesive layer 80, which is the peeling force when peeling the peeling film 30 from the semiconductor processing sheet 2. The impact is greater. Therefore, the semiconductor processing sheet 2 provided with the adhesive layer 60 for a jig is defined as the surface (second surface 602) on the release film 30 side of the adhesive layer 60 for a jig and the release film as described later. The peeling force β at the interface of the surface (first surface 301) on the side of the adhesive layer 60 of the fixture of 30.

In the semiconductor processing plate 1 of this embodiment, the peeling force β is 10 to 1000 mN / 50 mm, preferably 10 to 500 mN / 50 mm, and particularly preferably 30 to 200 mN / 50 mm. When the peeling force β is less than 10 mN / 50 mm, it is easy to remove the laminated body of the substrate 10 and the semiconductor attaching layer 80 from the release film when the semiconductor processing sheet 1 is rolled out from the roll and at an unintended stage. 30 peeling. When the peeling force β is greater than 1000 mN / 50 mm, when the semiconductor processing sheet 1 is used, the peeling system of the laminated body of the substrate 10 and the semiconductor bonding layer 80 from the peeling film 30 becomes difficult and the workability is deteriorated. In particular, when this laminated body is sequentially attached to a semiconductor wafer using a wafer mounter, defects such as the laminated body cannot be peeled off from the release film 30 well and cannot be attached are caused.

The thickness of the semiconductor processing sheet 1 according to this embodiment is not limited as long as it can have an appropriate function in the step of using the semiconductor processing sheet 1. The thickness is usually preferably 50 to 300 μm, particularly preferably 50 to 250 μm, and more preferably 50 to 230 μm. The thickness of the sheet 1 for semiconductor processing in this specification means the thickness after removing the release film 30 that has been peeled off before use of the sheet 1 for semiconductor processing.

2. Substrate

In the semiconductor processing sheet 1 of this embodiment, the arithmetic average roughness Ra of the first surface 101 of the base material 10 is 0.01 to 0.8 μm, particularly preferably 0.02 to 0.5 μm, and more preferably 0.03 to 0.3 μm. . If the arithmetic mean roughness Ra is less than 0.01 μm, the first surface 101 becomes excessively smooth and the value of the peeling force α becomes too large. At the same time, when the semiconductor processing sheet 1 is rolled into a roll shape, adhesion is easily generated at the same time. It is difficult to satisfy the above relationship between the peeling force α and the peeling force β . In addition, if the arithmetic average roughness Ra is more than 0.8 μm, the light ray irradiating the first surface 101 is likely to scatter on this surface and impair the light transmittance. The arithmetic mean roughness Ra in this specification is measured in accordance with JIS B0601: 2013, and the details of the measurement method are as disclosed in Examples described later.

In order to achieve the above-mentioned arithmetic average roughness Ra, it is preferable to manufacture the base material 10 so as to have the above-mentioned arithmetic average roughness Ra. For example, it is preferable to manufacture the substrate 10 having the above-mentioned arithmetic average roughness Ra by adjusting the surface roughness of a roller used for extrusion molding on the substrate 10. Or when manufacturing the base material 10 using a blow molding method, it is preferable to adjust so that the roughness of the surface of the 1st surface 101 may become the said arithmetic mean roughness Ra.

The arithmetic average roughness Ra of the second surface 102 of the base material 10 can be appropriately set as long as the light transmittance of the base material 10 can be ensured. Preferably, 0.05 to 1.0 μm is more preferable.

In the sheet 1 for semiconductor processing of this embodiment, the constituent material of the base material 10 is only required to exhibit excellent light transmittance for light having a desired wavelength, and can be used for the steps required for using the sheet 1 for semiconductor processing. The function is not particularly limited. The base material 10 may be a film (resin film) containing a resin-based material as a main material. The base material 10 is preferably composed of only a resin film. Specific examples of the resin film include an ethylene-vinyl acetate copolymer film; an ethylene- (meth) acrylic acid copolymer film; and an ethylene- (meth) acrylic acid film. Ethylene copolymer film, and other ethylene-based (meth) acrylate copolymer films; polyethylene film, polypropylene film, polybutene film, polybutadiene film, poly Polyolefin films such as methylpentene film, ethylene-norbene copolymer film, norbornene resin film; polyvinyl chloride films such as polyvinyl chloride film, vinyl chloride copolymer film; polyterephthalic acid Polyester films such as ethylene film, polybutylene terephthalate film, polyethylene naphthalate; (meth) acrylate copolymer film; polyurethane film; polyimide film; polybenzene Ethylene film; polycarbonate film; fluororesin film, etc. Examples of the polyethylene film include a low-density polyethylene (LDPE) film, a linear low-density polyethylene (LLDPE) film, and a high-density polyethylene (HDPE) film. In addition, the above-mentioned modified films such as a crosslinked film and an ionic polymer film can also be used. The substrate 10 may be a thin film composed of one of the foregoing types, or a thin film composed of a material obtained by combining two or more types of the above. Furthermore, it may be a multilayer film having a multilayer structure in which a layer composed of one or more of the above materials is laminated in a plurality of layers. The laminated film here may be made of the same material or different materials. As the substrate 10, among the above films, an ethylene-vinyl acetate copolymer film, an ethylene-methyl methacrylate copolymer film, a polyvinyl chloride film, or a polypropylene film is preferably used. In addition, "(meth) acrylic acid" in this specification means both acrylic acid and methacrylic acid. The same applies to other similar terms.

The substrate 10 may contain a flame retardant, a plasticizer, an antistatic agent, a slip agent, an antioxidant, a colorant, and infrared absorption, as long as the excellent light transmittance of light having a desired wavelength is not impaired. Additives, UV absorbers, ion trapping agents, and other additives. The content of these additives is not particularly limited, but it is assumed that the substrate 10 can exhibit excellent properties. The range of light transmission and required functions is better.

As described later, when the adhesive layer 20 is used as the semiconductor attaching layer 80 and the energy ray is used to harden the adhesive layer 20, the substrate 10 preferably has light transmittance to the energy ray. Examples of the energy ray include ultraviolet rays and electron rays.

The second surface 102 of the base material 10 can be subjected to a surface treatment such as a primer treatment, a corona treatment, and a plasma treatment as long as the light transmittance of the semiconductor processing sheet 1 is not impaired. The adhesion of the attachment layer 80.

The thickness of the substrate 10 is not limited as long as the steps used in the semiconductor processing sheet 1 can have appropriate functions. This thickness is usually preferably 20 to 450 μm, particularly preferably 25 to 300 μm, and more preferably 50 to 200 μm.

3. Release film

The arithmetic average roughness Ra of the second surface 302 of the release film 30 is preferably 0.02 to 0.8 μm, particularly preferably 0.03 to 0.5 μm, and more preferably 0.05 to 0.3 μm. When the arithmetic average roughness Ra of the second surface 302 is 0.02 to 0.8 μm, the second surface 302 has an appropriate roughness and the value of the peeling force α does not become too large. Thereby, the above-mentioned relationship is easily satisfied between the peeling force α and the peeling force β . In addition, since the arithmetic average roughness Ra of the second surface 302 is 0.02 μm or more, the second surface 302 of the release film 30 cannot easily adhere to a smooth surface when the semiconductor processing sheet 1 is rolled into a roll shape. As a result, the first surface 101 of the base material 10 can effectively prevent occurrence of adhesion. In addition, when the arithmetic average roughness Ra of the second surface 302 is 0.8 μm or less, when the semiconductor processing sheet 1 is rolled into a roll shape, the surface shape of the second surface 302 of the release film 30 is transferred. Even the first surface 101 of the base material 10 can prevent the smoothness of the first surface 101 from decreasing.

In order to achieve the above-mentioned arithmetic average roughness Ra, when the release film 30 is manufactured, it may be manufactured with the above-mentioned arithmetic average roughness Ra. Alternatively, after the constituent material of the release film 30 is manufactured into a sheet shape, the sheet is subjected to surface treatment so as to have the above-mentioned arithmetic average roughness Ra. In the former case, for example, the release film 30 having the above-mentioned arithmetic average roughness Ra can be manufactured by adjusting the roughness of a roll used for extrusion molding of the release film 30. In the latter case, it is possible to manufacture the release film 30 having the above-mentioned arithmetic average roughness Ra, for example, by subjecting the sheet to sandblasting, embossing, or the like.

The arithmetic average roughness Ra on the first surface 301 of the peeling film 30 can be appropriately set as long as the peeling force α and the peeling force β have the above-mentioned relationship and the peeling force β has the above-mentioned value. It is preferably 0.02 to 0.10 μm, particularly preferably 0.02 to 0.07 μm, and more preferably 0.03 to 0.05 μm.

The release film 30 is generally capable of providing a release agent layer on the 301 side of the first surface to exert the peeling property from the semiconductor attaching layer 80. The release film 30 of the semiconductor processing sheet of the present embodiment may be provided with a release agent layer on each of the first surface 301 side and the second surface 302 side. At this time, the release film 30 has a configuration in which a release agent layer is provided on both sides of a substrate such as a resin film. By having a release agent layer on the 301 side of the first surface, the peeling force β easily reaches the above-mentioned value. Moreover, by having a release agent layer on the 302 side of the second surface, the above-mentioned relationship is easily achieved between the peeling force α and the peeling force β . As the release agent, a silicone-based release agent, an alkyd-based release agent, a fluorine-based release agent, a long-chain alkyl-based release agent, a rubber-based release agent, or the like can be used. Among these, from the viewpoint of easily adjusting the peeling force β to the above-mentioned value, it is preferable to use a polysiloxane-based peeling agent on the side of the first surface 301, and it is easy to change the ratio of the peeling force α to the peeling force β ( From the viewpoint of adjusting α / β ) to the above value, it is preferable to use a polysiloxane-based release agent or an alkyd-based release agent on the second surface 302 side.

As a material constituting the release film 30, for example, a resin film can be used. Specific examples of the resin film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; and polymer films such as polypropylene and polyethylene. Olefin film.

The thickness of the release film 30 is not particularly limited, but is usually about 12 to 250 μm.

4.Semiconductor attachment layer

The semiconductor attaching layer 80 refers to a layer attached to a semiconductor wafer or the like or a layer attached to a semiconductor wafer or the like when the semiconductor processing sheet 1 according to this embodiment is used. The attaching at this time may be a temporary attaching at the time of using the semiconductor processing sheet 1, or may continue to attach after using the semiconductor processing sheet 1. Preferred examples of the semiconductor attaching layer 80 include an adhesive layer 20, an adhesive layer 40, a protective film forming layer 50, a laminated body composed of the adhesive layer 20 and an adhesive layer 40, and an adhesive. A laminated body composed of the layer 20 and the protective film forming layer 50 and the like.

FIG. 3 shows a first aspect of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1 a in this aspect, the semiconductor attaching layer 80 is the adhesive layer 20. In the semiconductor processing sheet 1 a, the adhesive layer 20 has a first surface 201 on the proximal end side of the substrate 10 and a proximal end of the release film 30. The side has a second surface 202. The semiconductor processing sheet 1a can be used as a dicing sheet, for example.

FIG. 4 shows a second aspect of the semiconductor processing sheet 1 according to the first embodiment. In the semiconductor processing sheet 1 b in this aspect, the semiconductor attaching layer 80 is an adhesive layer 40. In the semiconductor processing sheet 1b, the adhesive layer 40 has a first surface 401 on the proximal end side of the substrate 10 and a second surface 402 on the proximal end side of the release film 30. The semiconductor processing sheet 1b can be used, for example, as a wafer bonding sheet.

Fig. 5 shows a third aspect of the semiconductor processing sheet of the first embodiment. In the semiconductor processing sheet 1 c in this aspect, the semiconductor attaching layer 80 is a protective film forming layer 50. In the semiconductor processing sheet 1c, the protective film forming layer 50 has a first surface 501 on the proximal end side of the base material 10 and a second surface 502 on the proximal end side of the release film 30. The semiconductor processing sheet 1c can be used, for example, as a sheet for forming a protective film.

FIG. 6 shows a fourth aspect of the semiconductor processing sheet 1 according to the first embodiment. In this aspect of the semiconductor processing board 1d, the semiconductor attaching layer 80 is a laminated body composed of the adhesive layer 20 and the adhesive layer 40. In the semiconductor processing sheet 1d, the adhesive layer 20 is located on the proximal end side of the substrate 10, and the adhesive layer 40 is located on the proximal end side of the release film 30. The adhesive layer 20 has a first surface 201 on the proximal end side of the base material 10 and a second surface 202 on the proximal end side of the release film 30. The adhesive layer 40 has a first surface 401 on the proximal side of the substrate 10 and a second surface 402 on the proximal side of the release film 30. In addition, the semiconductor processing sheet 1d can be used as, for example, dicing. Wafer bonding plate.

FIG. 7 shows a fifth aspect of the semiconductor processing sheet 1 according to the first embodiment. In this aspect of the semiconductor processing sheet 1e, the semiconductor attaching layer 80 is a laminated body composed of the adhesive layer 20 and the protective film forming layer 50. In the semiconductor processing sheet 1e, the adhesive layer 20 is located on the proximal end side of the substrate 10, and the protective film forming layer 50 is located on the proximal end side of the release film 30. The adhesive layer 20 has a first surface 201 on the proximal end side of the base material 10 and a second surface 202 on the proximal end side of the release film 30. The protective film forming layer 50 has a first surface 501 on the proximal end side of the substrate 10 and a second surface 502 on the proximal end side of the release film 30. The semiconductor processing sheet 1e can be used for dicing a semiconductor wafer. After dicing, a protective film can be formed on the semiconductor wafer by heating the protective film forming layer 50 or the like. The sheet 1e for semiconductor processing can also be used as a sheet for forming a protective film.

(1) Adhesive layer

In the sheet 1 for semiconductor processing of this embodiment, the adhesive layer 20 may be made of a non-energy-ray-curable adhesive (consisting of a polymer having no energy-ray-curable) or an energy-ray-curable adhesive. As the non-energy ray hardening adhesive, it is preferable to have a required adhesive force and re-peelability. For example, an acrylic adhesive, a rubber adhesive, a silicone adhesive, or a urethane adhesive can be used. Agents, polyester-based adhesives, polyvinyl ether-based adhesives, and the like. Among these, an acryl-based adhesive capable of effectively suppressing peeling of a semiconductor wafer, a semiconductor wafer, or the like in a dicing step or the like is preferred.

On the other hand, since the energy ray hardening adhesive reduces the adhesive force by irradiating the energy rays, it is possible to separate the semiconductor wafer, the semiconductor wafer, and the like from the semiconductor processing plate 1 by irradiating the energy rays. easily Make it separate.

The energy ray-curable adhesive constituting the adhesive layer 20 may be composed of a polymer having energy ray curability as a main component, or a non-energy ray curable polymer (polymer without energy ray curability) Material) and a monomer and / or oligomer having at least one energy ray-curable group as a main component. In addition, it may be a mixture of a polymer having energy ray hardening property and a non-energy ray hardening polymer, or a monomer having energy ray hardening property and a monomer having at least one or more energy ray hardening group and The mixture of oligomers may also be a mixture of the above three types.

First, a case where the energy ray-curable adhesive is based on a polymer having energy ray curability as a main component will be described below.

Energy ray-curable polymer is a (meth) acrylate (co) polymer (A) (hereinafter referred to as "meth) acrylate" "Energy ray hardening polymer (A)" is preferred. The energy ray-curable polymer (A) includes an acrylic copolymer (a1) having a functional unit-containing monomer unit and an unsaturated group-containing compound (a1) having a functional group bonded to the functional group. a2) Those obtained by reaction are preferred.

The acrylic copolymer (a1) is composed of a structural unit introduced from a functional group-containing monomer and a structural unit introduced from a (meth) acrylate monomer or a derivative thereof.

The functional group-containing monomer as a structural unit of the acrylic copolymer (a1) is a unit having a polymerizable double bond in the molecule, and a functional group such as a hydroxyl group, a carboxyl group, an amine group, a substituted amine group, or an epoxy group. The body is better.

Examples of the hydroxyl-containing monomer include 2-hydroxy (meth) acrylate Ethyl ester, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, (methyl ) 4-hydroxybutyl acrylate and the like. These may be used alone or in combination of two or more.

Examples of the carboxyl group-containing monomer include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These may be used alone or in combination of two or more.

Examples of the amine-group-containing monomer or the substituted amine-group-containing monomer include aminoethyl (meth) acrylate and n-butylaminoethyl (meth) acrylate. These may be used alone or in combination of two or more.

As the (meth) acrylate monomer constituting the acrylic copolymer (a1), an alkyl (meth) acrylate having 1 to 20 carbon atoms, a cycloalkyl (meth) acrylate, and (formaldehyde) can be used. Group) benzyl acrylate. Among these, particularly preferred are alkyl (meth) acrylates having 1 to 18 carbon atoms in the alkyl group. For example, methyl (meth) acrylate, ethyl (meth) acrylate, and propyl (meth) acrylate can be used. Esters, n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and the like.

The acrylic copolymer (a1) usually contains a structural unit introduced from the functional group-containing monomer in a ratio of 3 to 100% by mass, preferably 5 to 40% by mass, and usually 0 to 97% by mass, preferably A ratio of 60 to 95% by mass includes a structural unit introduced from a (meth) acrylate monomer or a derivative thereof.

The acrylic copolymer (a1) can be obtained by copolymerizing a functional group-containing monomer as described above with a (meth) acrylic acid ester monomer or a derivative thereof by a common method. In addition to these monomers, Dimethacrylamide, vinyl formate, vinyl acetate, styrene, etc. can be copolymerized.

Energy-ray hardening can be obtained by reacting the acrylic copolymer (a1) having the functional unit-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group. Polymer (A).

The functional group of the unsaturated group-containing compound (a2) can be appropriately selected according to the type of the functional group of the functional unit-containing monomer unit that the acrylic copolymer (a1) has. For example, when the functional group of the acrylic copolymer (a1) is a hydroxyl group, an amine group, or a substituted amine group, as the functional group of the unsaturated group-containing compound (a2), an isocyanate group or an epoxy group is preferred. When the functional group of the acrylic copolymer (a1) is an epoxy group, as the functional group of the unsaturated group-containing compound (a2), an amine group, a carboxyl group, or an aziridine group is preferred.

唑啉、2-異丙烯基-2-

唑啉等。 Moreover, the above-mentioned unsaturated group-containing compound (a2) contains at least one carbon-carbon double bond system in one molecule, preferably 1 to 6, and more preferably 1 to 4 in one molecule. Specific examples of such an unsaturated group-containing compound (a2) include, for example, 2-methacryloxyethyl isocyanate, m-isopropenyl- α , α -dimethylbenzyl isocyanate, and methyl Propylene isocyanate methacrylate, allyl isocyanate, 1,1- (bispropenyloxymethyl) ethyl isocyanate; diisocyanate compound or polyisocyanate compound, and (meth) acrylic hydroxyl group Acrylic fluorenyl-isocyanate compound obtained by reaction of ethyl ester; propylene fluorenyl-isocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with polyol compound and hydroxyethyl (meth) acrylate; (methyl) Glycidyl acrylate; (meth) acrylic acid, 2- (1-acylcyclopropylalkyl) ethyl (meth) acrylate, 2-vinyl-2-

Oxazoline, 2-isopropenyl-2-

Oxazoline and so on.

The unsaturated group-containing compound (a2) is usually 5 to 95 mole%, and more preferably 5 to 95 mole% relative to the functional group-containing monomer of the acrylic copolymer (a1). Use at a rate of 10 to 95 mole%.

The reaction between the acrylic copolymer (a1) and the unsaturated group-containing compound (a2) is based on the functionality of the acrylic copolymer (a1) and the unsaturated group-containing compound (a2). The combination of the groups is appropriately selected by the reaction temperature, pressure, solvent, time, presence or absence of catalyst, and type of catalyst. Thereby, the functional group existing in the acrylic copolymer (a1) reacts with the functional group in the unsaturated group-containing compound (a2), and the unsaturated group is introduced into the side chain in the acrylic copolymer (a1). In addition, an energy ray-curable polymer (A) can be obtained.

The weight-average molecular weight of the energy ray-curable polymer (A) obtained in this manner is preferably 10,000 or more, particularly preferably 150,000 to 1,500,000, and more preferably 200,000 to 1,000,000. In addition, the weight average molecular weight (Mw) in this specification is a standard polystyrene conversion value measured by the gel permeation chromatography method (GPC method).

The energy ray-curable adhesive is an energy ray-curable polymer, and the energy ray-curable polymer may further contain an energy ray-curable monomer. And / or oligomer (B).

As the energy ray-curable monomer and / or oligomer (B), for example, an ester of a polyhydric alcohol and (meth) acrylic acid can be used.

Examples of such energy ray-curable monomers and / or oligomers (B) include monofunctional acrylates such as cyclohexyl (meth) acrylate and isofluorene (meth) acrylate, Trimethylolpropane tri (meth) acrylate, neopentaerythritol tri (meth) acrylate, neopentaerythritol tri (meth) acrylate, dinepentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanedi Polyfunctional acrylates such as alcohol di (meth) acrylate, polyethylene glycol di (meth) acrylate, dimethylol tricyclodecane di (meth) acrylate, and polyester oligomers ( (Meth) acrylate, polyurethane oligo (meth) acrylate, and the like.

When an energy ray-curable monomer and / or oligomer (B) is blended with the energy ray-curable polymer (A), the energy ray-curable monomer and / or oligomer in the energy ray-curable adhesive is used. The content of the substance (B) is preferably from 10 to 40 parts by mass, and particularly preferably from 30 to 350 parts by mass based on 100 parts by mass of the energy ray-curable polymer (A).

Here, when ultraviolet rays are used as the energy rays to obtain an energy-ray-curable adhesive, it is better to add a photopolymerization initiator (C). By using this photopolymerization initiator (C), the polymerization can be reduced. Hardening time and light exposure.

Specific examples of the photopolymerization initiator (C) include diphenyl ketone, acetophenone, benzoin, benzoin methyl ether, benzoin ether, benzoin isopropyl ether, and benzoin Isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl Phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, bibenzyl, biacetamidine, β -chloroanthraquinone, (2,4, 6-trimethylbenzyldiphenyl) phosphine oxide, 2-benzothiazole-N, N-diethyldithiocarbamate, oligomeric {2-hydroxy-2-methyl-1- [4 -(1-propenyl) phenyl] acetone}, 2,2-dimethoxy-1,2-diphenylethane-1-one, and the like. These may be used alone or in combination of two or more.

The photopolymerization initiator (C) is based on the energy ray-curable copolymer (A) (in the case where an energy ray-curable monomer and / or oligomer (B) is formulated, it is compared with the energy ray-curable copolymer. (A) and energy ray hardening monomer and / or oligomer (B) The total amount is 100 parts by mass) 100 parts by mass, and it is preferably used in an amount ranging from 0.5 to 6 parts by mass.

The energy ray-curable adhesive may be formulated with other components in addition to the components described above. Examples of the other components include a non-energy-ray-curable polymer component or oligomer component (D), a cross-linking agent (E), and the like.

Examples of the non-energy-ray-curable polymer component or oligomer component (D) include polyacrylate, polyester, polyurethane, polycarbonate, and polyolefin. The weight-average molecular weight (Mw) is 3,000 to 2,500,000. Polymers or oligomers are preferred. By blending this component (D) in an energy ray-curable adhesive, it is possible to improve the adhesiveness and peelability before curing, the strength after curing, adhesion to other layers, storage stability, and the like. The blending amount of this component (D) is not particularly limited.

唑啉化合物、金屬烷氧化物化合物、金屬鉗合物化合物、金屬鹽、銨鹽、反應性酚樹脂等。藉由在能量線硬化性黏著劑調配此成分(E)，能夠改善在硬化前之黏著性及剝離性、黏著劑的凝聚性等。此成分(E)的調配量係沒有特別限定，相對於能量線硬化型共聚物(A)100質量份，能夠在0~15質量份的範圍適當地決定。 As the crosslinking agent (E), a polyfunctional compound having reactivity with a functional group included in the energy ray-curable copolymer (A) and the like can be used. Examples of such a polyfunctional compound include an isocyanate compound, an epoxy compound, an amine compound, a melamine compound, an acryl propane compound, a hydrazine compound, an aldehyde compound,

An oxazoline compound, a metal alkoxide compound, a metal clamp compound, a metal salt, an ammonium salt, a reactive phenol resin, and the like. By blending this component (E) in an energy ray-curable adhesive, it is possible to improve the adhesiveness and peelability before curing, the cohesiveness of the adhesive, and the like. The blending amount of this component (E) is not particularly limited, and can be appropriately determined in a range of 0 to 15 parts by mass based on 100 parts by mass of the energy ray-curable copolymer (A).

Next, the energy ray-curable adhesive is composed of a non-energy ray-curable polymer component and at least one energy ray-curable group. A case where a mixture of a polymer and / or an oligomer is used as a main component will be described below.

As the non-energy-ray-curable polymer component, for example, the same component as the aforementioned acrylic copolymer (a1) can be used.

As the monomer and / or oligomer having at least one energy ray-curable group, the same as the aforementioned component (B) can be selected. The blending ratio of the non-energy-ray-curable polymer component to a monomer and / or oligomer having at least one energy-ray-curable group is less than 100 parts by mass of the non-energy-ray-curable polymer component. The monomer and / or oligomer having more than one energy ray-curable group is preferably 10 to 250 parts by mass, and particularly preferably 25 to 100 parts by mass.

In this case, similarly to the above, a photopolymerization initiator (C), a crosslinking agent (E), and the like can be appropriately blended.

The thickness of the adhesive layer 20 is not particularly limited as long as it can have an appropriate function in each step using the semiconductor processing sheet 1. Specifically, 1 to 50 μm is preferable, 2 to 40 μm is particularly preferable, and 3 to 30 μm is more preferable.

(2) Adhesive layer

As a material constituting the adhesive layer 40, any material that can fix the wafer during dicing and can form an adhesive layer for each individual wafer can be used without limitation. As the material constituting such an adhesive layer 40, those made of a thermoplastic resin and a low-molecular-weight thermosetting adhesive component, those made of a B-stage (semi-hardened) thermosetting adhesive component, and the like can be used. Among these, the material constituting the adhesive layer 40 is preferably one containing a thermoplastic resin and a thermosetting adhesive component. As the thermoplastic resin, (meth) acrylic copolymer, polyester resin, urethane resin, phenoxy resin, polybutene, Polybutadiene, polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, ethylene (meth) acrylic copolymer, ethylene (meth) acrylate copolymer, polybenzene Ethylene, polycarbonate, polyimide, and the like are particularly preferably a (meth) acrylic copolymer in terms of adhesiveness and film forming properties (sheet processability). Examples of the thermosetting adhesive component include epoxy-based resins, polyimide-based resins, phenol-based resins, polysiloxane-based resins, cyanate-based resins, and bis-butenediimine-triazine-based resins , Allylated polyphenylene ether resin (thermosetting PPE), formaldehyde resin, unsaturated polyester or copolymer thereof, and the like, and epoxy resin is particularly preferred from the viewpoint of adhesiveness. The material constituting the adhesive layer 40 is excellent in adhesion to a semiconductor wafer, in particular, it is excellent in peelability between the semiconductor processing sheet 1d and the adhesive layer 20 shown in FIG. 6. A material containing a (meth) acrylic copolymer and an epoxy resin is particularly preferred.

The (meth) acrylic copolymer is not particularly limited, and a conventionally known (meth) acrylic copolymer can be used. The weight average molecular weight (Mw) of the (meth) acrylic copolymer is preferably 10,000 to 2,000,000, and particularly preferably 100,000 to 1,500,000. When the Mw of the (meth) acrylic copolymer is 10,000 or more, especially the semiconductor processing sheet 1d shown in FIG. 6, the peelability of the adhesive layer 40 and the adhesive layer 20 becomes better and can be improved. Pickup of the wafer is performed efficiently. In addition, when the Mw of the (meth) acrylic copolymer is 2,000,000 or less, the adhesive layer 40 can follow the unevenness of the adherend better, and can effectively prevent the generation of voids and the like.

The glass transition temperature (Tg) of the (meth) acrylic copolymer is preferably -60 to 70 ° C, and more preferably -30 to 50 ° C. The Tg of the (meth) acrylic copolymer is -60 ° C or higher, especially the semiconductor processing board shown in Fig. 6 In the sheet 1d, the releasability of the adhesive layer 40 and the adhesive layer 20 becomes better, and wafers can be efficiently picked up. In addition, when the Tg of the (meth) acrylic copolymer is 70 ° C. or lower, a sufficient adhesive force for fixing the wafer can be obtained.

Examples of the monomer constituting the (meth) acrylic copolymer include a (meth) acrylate monomer or a derivative thereof, and more specifically, for example, methyl (meth) acrylate, (meth) ) Alkyl (meth) acrylates having 1 to 18 carbon atoms, such as ethyl acrylate, propyl (meth) acrylate, and butyl (meth) acrylate; cycloalkyl (meth) acrylate, (formyl) (Benzyl) acrylate, isoamyl (meth) acrylate, dicyclopentyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, (Meth) acrylic acid esters having a cyclic skeleton, such as (meth) acrylic acid imine acrylate; hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxy (meth) acrylate Hydroxyl-containing (meth) acrylates such as propyl esters; glycidyl acrylate, glycidyl methacrylate, and the like. In addition, unsaturated monomers containing a carboxyl group, such as acrylic acid, methacrylic acid, and itaconic acid, can also be used. These may be used individually by 1 type, and may use 2 or more types together.

As the monomer constituting the (meth) acrylic copolymer, among the above, in terms of compatibility with the epoxy resin, it is preferable to use at least a hydroxyl-containing (meth) acrylate. At this time, in the (meth) acrylic copolymer, the structural unit derived from the hydroxyl-containing (meth) acrylate is preferably contained in a range of 1 to 20% by mass, and is preferably in a range of 3 to 15% by mass. A range is preferred. The (meth) acrylic copolymer is preferably a copolymer of an alkyl (meth) acrylate and a hydroxyl group-containing (meth) acrylate.

In addition, the (meth) acrylic copolymer may copolymerize monomers such as vinyl acetate, acrylonitrile, and styrene as long as the object of the present invention is not impaired. Together.

As the epoxy resin, various conventionally known epoxy resins can be used. Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, phenylene skeleton epoxy resin, phenol novolac epoxy resin, and cresol novolac epoxy resin. , Dicyclopentadiene (DCPD) epoxy resin, biphenyl epoxy resin, triphenol methane epoxy resin, heterocyclic epoxy resin, fluorene epoxy resin, condensed aromatic hydrocarbon modified ring Oxygen resins, epoxy resins containing two or more functional groups in structural units such as the above-mentioned halides, and the like. These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

The epoxy equivalent of the epoxy resin is not particularly limited. The epoxy equivalent is usually 150 ~ 1000g / eq. The epoxy equivalent in this specification is a value measured in accordance with JIS K7236: 2009.

The content of the epoxy-based resin is preferably 1 to 1500 parts by mass, and more preferably 3 to 1,000 parts by mass based on 100 parts by mass of the (meth) acrylic copolymer. When the content of the epoxy-based resin is 1 part by mass or more based on 100 parts by mass of the (meth) acrylic copolymer, a sufficient adhesive force can be obtained. In addition, when the content of the epoxy-based resin is 1500 parts by mass or less based on 100 parts by mass of the (meth) acrylic copolymer, sufficient film forming properties can be obtained and the adhesive layer 40 can be efficiently formed.

It is preferable that the material constituting the adhesive layer 40 further contains a curing agent for curing the epoxy resin. Examples of the curing agent include compounds having two or more functional groups capable of interacting with an epoxy group in the molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, and an acid anhydride group. Among these, a phenolic hydroxyl group, an amine group, and an acid anhydride group are preferable, and a phenolic hydroxyl group and an amine group are preferable Is better.

Specific examples of the hardener include phenolic thermohardeners such as novolac-type phenol-based resins, dicyclopentadiene-based phenol-based resins, triphenol-methane-based phenol-based resins, and aralkylphenol-based resins; DICY (Cyanoguanidine) and the like. The hardener may be used alone or in combination of two or more.

The content of the hardener is preferably 0.1 to 500 parts by mass, and more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin. When the content of the hardener is 0.1 parts by mass or more with respect to 100 parts by mass of the epoxy resin, a sufficient adhesive force can be obtained. In addition, when the content of the hardener is 500 parts by mass or less with respect to 100 parts by mass of the epoxy resin, the moisture absorption rate of the adhesive layer 40 can be effectively prevented from increasing, and the reliability of the semiconductor device can be made more excellent.

The material (adhesive composition) constituting the adhesive layer 40 may contain a hardening accelerator, a coupling agent, a cross-linking agent, an energy ray hardening compound, a photopolymerization initiator, and a plasticizer in addition to the above. , Antistatic agents, antioxidants, pigments, dyes, inorganic fillers and other additives. Each of these additives may be contained singly or in combination of two or more kinds.

The hardening accelerator is used to adjust the hardening speed of the adhesive composition. As a hardening accelerator, the compound which can accelerate the reaction of an epoxy group with a phenolic hydroxyl group, an amine, etc. is preferable. Specific examples of such compounds include tertiary amines, imidazoles such as 2-phenyl-4,5-bis (hydroxymethyl) imidazole, organic phosphines, and tetraphenylboron salts.

The coupling agent has adhesiveness to the adherend of the adhesive composition. The function of improving adhesion. In addition, by using a coupling agent, the cured product can be improved without impairing the heat resistance of the cured product obtained by curing the adhesive composition. Water resistance. The coupling agent is preferably a compound having a group that reacts with the functional group of the (meth) acrylic polymer and the epoxy resin. As such a coupling agent, a silane coupling agent is preferred.

The silane coupling agent is not particularly limited, and a person skilled in the art can be used. Examples include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-epoxycyclohexyl) ethyltrimethyl Oxysilane, γ- (methacryloxypropyl) trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6- (amineethyl) -γ-aminopropyltrimethoxysilane , N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureapropyltriethoxysilane, γ-hydrothiopropyltrimethoxysilane, γ-hydrothiopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfane, methyltrimethoxysilane , Methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, imidazolesilane, etc. These can be used individually by 1 type or in mixture of 2 or more types.

The crosslinking agent is for adjusting the cohesive force of the adhesive layer 40. The crosslinking agent of the (meth) acrylic polymer is not particularly limited, and a person skilled in the art can be used. For example, the above-mentioned materials can be used as a material constituting the adhesive layer 20.

The energy-ray-curable compound is a compound that undergoes polymerization and hardening when irradiated with energy rays such as ultraviolet rays. The energy ray-curable compound is hardened by energy ray irradiation. In particular, the semiconductor processing sheet 1d shown in FIG. 6 can improve the peelability of the adhesive layer 40 and the adhesive layer 20, so the pickup system of the semiconductor wafer is improved. It becomes easy.

As the energy ray hardening compound, an acrylic compound is preferred, and a polymer having at least one polymerizable double bond in the molecule is particularly preferred. Kinds of acrylic compounds, specifically, dicyclopentadiene dimethoxydiacrylate, trimethylolpropane triacrylate, neopentaerythritol triacrylate, neopentaerythritol tetraacrylate, Dipentaerythritol monohydroxypentaacrylate, dinepentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, Oligopolyester acrylate, urethane acrylate-based oligomer, epoxy-modified acrylate, polyether acrylate, itaconic acid oligomer, and the like.

The weight average molecular weight of the acrylic compound is usually 100 to 30,000, and preferably about 300 to 10,000.

When the adhesive composition contains an energy ray-curable compound, the content of the energy ray-curable compound is usually 1 to 400 parts by mass, and preferably 3 to 300 parts by mass relative to 100 parts by mass of the (meth) acrylic polymer. , Preferably 10 to 200 parts by mass.

When the adhesive layer 40 contains the above-mentioned energy ray-curable compound, the photopolymerization initiator can reduce the time of polymerization and hardening and the amount of irradiation of the energy ray when it is polymerized and hardened by irradiation with the energy ray. The photoinitiator is not particularly limited, and conventional materials can be used. For example, the materials described above can be used as a material constituting the adhesive layer 20.

The thickness of the adhesive layer is usually 3 to 100 μm, preferably 5 to 80 μm.

(3) Protective film forming layer

The protective film forming layer 50 is preferably composed of an uncured hardening adhesive. At this time, after a semiconductor wafer, a semiconductor wafer, or the like is laminated on the protective film forming layer 50, the protective film forming layer 50 is hardened, so that the protective film can be firmly adhered to the semiconductor wafer, semiconductor wafer, etc. Wafers, etc. are formed with resistance Permanent protective film. The protective film forming layer 50 is irradiated with laser light at a stage where the curable adhesive is not hardened or a stage after hardening, so that good printing can be performed.

It is preferable that the protective film forming layer 50 has adhesiveness at room temperature or exhibits adhesiveness by heating. Thereby, as described above, when the protective film forming layer 50 is stacked with a semiconductor wafer, a semiconductor wafer, or the like, the two can be bonded together. Therefore, before the protective film forming layer 50 is hardened, positioning can be surely performed, and the operability of the semiconductor processing plates 1c and 1e becomes easy.

The curable adhesive constituting the protective film-forming layer 50 having the characteristics described above is preferably a curable component and an adhesive polymer component. As the curable component, a thermocurable component, an energy ray curable component, or a mixture thereof can be used. From the viewpoint of the curing method of the protective film forming layer 50 and the heat resistance after curing, it is particularly preferable to use a thermosetting component, and from the viewpoint of curing time, it is preferable to use an energy ray-curable component.

嗪系樹脂等及其混合物。這些之中，能夠適合使用環氧系樹脂、酚系樹脂及其混合物。作為熱硬化性成分，通常使用分子量300~10,000左右者。 Examples of the thermosetting component include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, Benzo

Azine-based resins and the like and mixtures thereof. Among these, an epoxy resin, a phenol resin, and a mixture thereof can be suitably used. As the thermosetting component, a molecular weight of about 300 to 10,000 is generally used.

Epoxy resins have the property of forming a three-dimensional network and forming a strong film when heated. As such an epoxy-based resin, various conventional epoxy-based resins can be used, and it is usually preferable that the weight-average molecular weight is about 300 to 2500. In addition, the epoxy resin is a liquid resin having a weight average molecular weight of 300 to 500 in a normal state, and a weight average molecular weight of 400 to 2500, particularly An epoxy resin that is solid at room temperature with an average weight of 500 to 2000 is preferably used in the form of a blend. The epoxy equivalent of the epoxy resin is preferably 50 to 5000 g / eq.

烷等將分子內的碳-碳雙鍵例如藉由氧化而導入環氧基而成之所謂脂環型環氧化物。此外，亦能夠使用具有聯苯骨架、二環己二烯骨架、萘骨架等之環氧系樹脂。 Specific examples of such epoxy resins include phenolic epoxypropyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; butanediol Glycidyl ethers of alcohols, such as polyethylene glycol, polypropylene glycol, etc .; Glycidyl ethers of carboxylic acids such as phthalic acid, isophthalic acid, tetrahydrophthalic acid; etc. Epoxy-type or alkyl-epoxy-type epoxy resins substituted with active hydrogen of nitrogen atom such as aniline isotricyanate; such as vinyl cyclohexane diepoxide, 3, 4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4-epoxy) cyclohexane -Jamji

A so-called alicyclic epoxide in which a carbon-carbon double bond in the molecule is introduced into an epoxy group by oxidation, for example, is an alkane. In addition, an epoxy resin having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, or the like can also be used.

Among these, a bisphenol epoxy-type epoxy resin, an o-cresol novolak-type epoxy resin, and a phenol novolak-type epoxy resin can be suitably used. These epoxy resins can be used individually by 1 type, or in combination of 2 or more types.

When an epoxy resin is used, it is preferable to use a thermoactive latent epoxy resin hardener in combination as an auxiliary agent. The so-called thermally active latent epoxy resin hardener is a type of hardener that does not react with the epoxy resin at room temperature and is activated by heating above a certain temperature and reacts with the epoxy resin. A method for activating a thermally active latent epoxy resin hardener is a method in which a chemical reaction is generated by heating and an active species (anion, cation) is generated; It is stably dispersed in epoxy resin near room temperature, and is compatible with epoxy resin at high temperature. A method of dissolving and starting a hardening reaction; a method of using a molecular sieve enclosed type hardener to dissolve at a high temperature and starting a hardening reaction; a method of using microcapsules, and the like.

Specific examples of the thermally active latent epoxy resin hardener include high-melting-point active hydrogen compounds such as various onium salts, diacid dihydrazine compounds, cyanoguanidine, amine adduct hardeners, and imidazole compounds. Wait. These thermally active latent epoxy resin hardeners can be used alone or in combination of two or more. As described above, the thermally active latent epoxy resin hardener is preferably 0.1 to 20 parts by mass, particularly preferably 0.2 to 10 parts by mass, and more preferably 0.3 to 100 parts by mass of the epoxy resin. Use at a ratio of ~ 5 parts by mass.

As the phenol-based resin, a polymer having a phenolic hydroxyl group, such as a condensate of phenols such as alkylphenol, polyhydric phenol, naphthol, and aldehydes, can be used without particular limitation. Specifically, a phenol novolak-based resin, an o-cresol novolac-based resin, a p-cresol novolac-based resin, a third butyl novolac-based resin, a dicyclopentadiene cresol-based resin, Vinylphenol-based resin, bisphenol A-type novolac-based resin, or a modified product thereof.

The phenolic hydroxyl group contained in these phenol-based resins can be easily subjected to an addition reaction with the epoxy group of the epoxy-based resin by heating and can form a hardened product having high impact resistance. Therefore, an epoxy resin and a phenol resin can also be used together.

As the energy ray-curable component, for example, the foregoing can be used as a material constituting the adhesive layer 20. In addition, as the energy ray-curable component, an energy ray-curable monomer / oligomer may also be used. And as hardened with energy rays As the binder polymer component of the sexual component combination, an acrylic polymer to which an energy ray-curable compound is added may also be used.

The purpose of the adhesive polymer component is to provide appropriate adhesiveness to the protective film forming layer 50 or to improve the operability of the semiconductor processing plates 1c and 1e, and the like. The weight average molecular weight of the binder polymer is usually 30,000 to 2,000,000, preferably 50,000 to 1,500,000, and particularly preferably in the range of 100,000 to 1,000,000. When the weight average molecular weight is 30,000 or more, the thin film formation system of the protective film formation layer 50 becomes sufficient. Moreover, when the weight average molecular weight is 2,000,000 or less, the compatibility with other components can be maintained well, and the thin film formation of the protective film formation layer 50 can be performed uniformly. As such a binder polymer, for example, a (meth) acrylic copolymer, a polyester resin, a phenoxy resin, a urethane resin, a silicone resin, a rubber copolymer, or the like can be suitably used. In particular, a (meth) acrylic copolymer can be suitably used.

Examples of the (meth) acrylic copolymer include a (meth) acrylic acid ester copolymer obtained by polymerizing a (meth) acrylic acid ester monomer and a (meth) acrylic acid derivative. Here, as the (meth) acrylate monomer, an alkyl (meth) acrylate having 1 to 18 carbon atoms in the alkyl group is preferred, and for example, methyl (meth) acrylate and (meth) acrylic acid can be used. Ethyl ester, propyl (meth) acrylate, butyl (meth) acrylate, and the like. Examples of the (meth) acrylic acid derivative include (meth) acrylic acid, glycidyl (meth) acrylate, and hydroxyethyl (meth) acrylate.

Among the above, if a glycidyl methacrylate or the like is used as a structural unit and a glycidyl group is introduced into the (meth) acrylic copolymer, it is in phase with the epoxy resin as the above-mentioned thermosetting component. Improved solubility and protective film The glass transition temperature (Tg) after the formation layer 50 is cured becomes higher and the heat resistance is improved. Further, among the above, when a hydroxyethyl acrylate or the like is used as a structural unit and a hydroxy group is introduced into the (meth) acrylic copolymer, it is possible to control the adhesiveness and adhesive physical properties to a semiconductor wafer, a semiconductor wafer, and the like. When a glycidyl group is introduced into a (meth) acrylic copolymer using a glycidyl methacrylate or the like as a structural unit, the (meth) acrylic copolymer and a phenoxy group having an epoxy group are used. The base resin and the like are thermosetting. However, in this embodiment, such a polymer having a thermosetting property is not a thermosetting component but a polymer component corresponding to an adhesive.

When a (meth) acrylic copolymer is used as the binder polymer, the weight-average molecular weight of the (meth) acrylic copolymer is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. The glass transition temperature of the (meth) acrylic copolymer is usually 20 ° C or lower, preferably about -70 to 0 ° C, and has adhesiveness at normal temperature (23 ° C).

The blending ratio of the hardening component and the binder polymer component is preferably 50 to 1500 parts by mass, and particularly preferably 70 to 1000 parts by mass relative to 100 parts by mass of the binder polymer component. And more preferably 80 to 800 parts by mass. If a hardening component and an adhesive polymer component are blended in such a ratio, a suitable adhesiveness can be exhibited before curing, and a stable attaching operation can be performed. After curing, a protective film having excellent film strength can be obtained. .

The protective film forming layer 50 can be made to contain a filler and / or a colorant. However, when the semiconductor processing plates 1c and 1e are used for wafer shape inspection, stealth dicing, or laser printing of a semiconductor wafer, the protective film forming layer 50 must have light transmittance. Therefore, at this time, it is necessary to contain a filler and / or a colorant to such an extent that the light transmittance is not hindered. On the other hand, semiconductor processing When the plates 1c and 1e are used for the laser printing of the protective film forming layer 50 or a protective film formed by singulating the protective film forming layer 50, the light transmitting property is not required for the protective film forming layer 50. At this time, in order to enable laser printing, the protective film forming layer 50 must block this laser light. Therefore, in order to efficiently perform laser printing, the protective film forming layer 50 preferably contains a filler and / or a colorant. In addition, if the protective film forming layer 50 contains a filler, the hardness of the cured protective film can be maintained high, and the moisture resistance can be improved. In addition, the gloss of the surface of the formed protective film can be adjusted to a desired value. In addition, since the thermal expansion coefficient of the cured protective film can be made close to that of the semiconductor wafer, warpage of the semiconductor wafer during processing can be reduced.

Examples of the filler include silica such as crystalline silica, fused silica, synthetic silica, and other inorganic fillers such as alumina and glass balloons. Especially, synthetic silicon oxide is preferable, and especially synthetic silicon oxide is the best. Among these, the synthetic silicon oxide is a type in which an α- ray line source which is a main cause of malfunction of a semiconductor device is removed as much as possible. The shape of the filler may be any of a spherical shape, a needle shape, and an irregular shape.

As the filler to be added to the protective film forming layer 50, a functional filler may be blended in addition to the inorganic filler described above. Functional fillers include, for example, conductive fillers made of gold, silver, copper, nickel, aluminum, stainless steel, carbon, ceramics, or silver and nickel or aluminum for the purpose of imparting antistatic properties; Metal materials such as gold, silver, copper, nickel, aluminum, stainless steel, silicon, germanium, and the like, and thermally conductive fillers such as the above-mentioned alloys, are provided for the purpose of heat conduction.

As the colorant, known substances such as inorganic pigments, organic pigments, and organic dyes can be used.

Examples of the inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, and ITO ( Indium tin oxide; Indium Tin Oxide) pigments; ATO (antimony tin oxide) pigments.

嗪系色素、喹吖酮(quinacridone)系色素、異吲哚滿酮系色素、喹啉黃(quinophthalone)系色素、吡咯系色素、硫靛藍系色素、金屬錯合物系色素(金屬錯鹽染料)、二硫醇金屬錯合物系色素、吲哚酚系色素、三烯丙基甲烷系色素、蒽醌系色素、二

嗪系色素、萘酚系色素、甲亞胺系色素、苯并咪唑酮系色素、吡蒽二酮(pyranthron)系色素及士林(threne)系色素等。為了調整目標光線透射率，這些顏料或染料係能夠適當地混合而使用。 Examples of organic pigments and organic dyes include amine-based pigments, anthocyanin-based pigments, merocyanine-based pigments, croconium-based pigments, and squalium. Based pigments, azulenium based pigments, polymethine based pigments, naphthoquinone based pigments, pyranium based pigments, phthalocyanine based pigments, naphthalocyanine based pigments, naphtholactam based pigments, azo Pigment, condensed azo pigment, indigo pigment, perinone pigment, perylene pigment, two

Azine pigments, quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal salt dyes) ), Dithiol metal complex pigment, indole phenol pigment, triallyl methane pigment, anthraquinone pigment,

Azine-based pigments, naphthol-based pigments, methylimine-based pigments, benzimidazolone-based pigments, pyranthron-based pigments, and threne-based pigments. In order to adjust the target light transmittance, these pigments or dyes can be appropriately mixed and used.

From the viewpoint of printability by laser light irradiation, among the above, it is particularly preferable to use an inorganic pigment. Among the inorganic pigments, carbon black is particularly preferred. Carbon black is usually black, but the part that has been cut off due to laser light appears white. Because the contrast difference becomes larger, the part printed by laser has very good visibility.

The blending amount of the filler and the coloring agent in the protective film forming layer 50, What is necessary is to adjust appropriately so that a desired effect can be achieved. Specifically, the blending amount of the filler is usually preferably 40 to 80% by mass, and particularly preferably 50 to 70% by mass. The blending amount of the colorant is usually preferably 0.001 to 5% by mass, particularly preferably 0.01 to 3% by mass, and even more preferably 0.1 to 2.5% by mass.

The protective film forming layer 50 may contain a coupling agent. By containing a coupling agent, the adhesiveness of the protective film to a semiconductor wafer, a semiconductor wafer, or the like can be made without impairing the heat resistance of the protective film after the protective film forming layer 50 is cured. While improving the adhesion, it is possible to improve water resistance (humidity and heat resistance). As the coupling agent, a silane coupling agent is preferred because of its versatility and cost advantages. As a silane coupling agent, the said thing can be used, for example.

The protective film forming layer 50 may contain a cross-linking agent such as an organic polyisocyanate-based compound, an organic polyimide-based compound, or an organometallic complex compound in order to adjust the cohesive force before curing. The protective film forming layer 50 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the wafer. In addition, the protective film forming layer 50 may contain a flame retardant such as a phosphoric acid-based compound, a bromine-based compound, or a phosphorus-based compound in order to improve the flame retardancy of the protective film and the reliability as a component.

The thickness of the protective film forming layer 50 is preferably 3 to 300 μm, more preferably 5 to 250 μm, and even more preferably 7 to 200 μm in order to effectively function as a protective film.

The gloss value of the first surface 501 of the protective film forming layer 50 is preferably 25 or more, and particularly preferably 30 or more. When the gloss value of the first surface 501 is 25 or more, when the laser printing is performed on this surface, the appearance is excellent, and the formed printing has excellent visibility. The gloss values in this specification are A value measured in accordance with JIS Z 8741: 1997 at a measurement angle of 60 ° using a gloss meter.

5. Adhesive layer for fixture

The plate for semiconductor processing of this embodiment may further include an adhesive layer for a jig. Fig. 8 is a cross-sectional view showing a semiconductor processing plate 2 having a second embodiment including an adhesive layer 60 for a jig. In the semiconductor processing sheet 2, the jig adhesive layer 60 has a first surface 601 on the proximal end side of the semiconductor bonding layer 80 and a second surface 602 on the proximal end side of the release film 30. The adhesive layer 60 for a jig is formed in a shape corresponding to the shape of a jig such as a ring frame, and is usually formed in a ring shape. Thereby, regardless of the adhesive force of the semiconductor attaching layer 80, the semiconductor processing sheet 2 can be attached to a jig such as a ring frame, and can be reliably fixed.

In the second embodiment of the semiconductor processing plate 2, as shown in FIG. 8, the jig adhesive layer 60 is in contact with the first surface 301 of the release film 30. As shown in FIG. 8, in the central portion of the semiconductor processing sheet 2 where the adhesive layer 60 for the jig is not present, the 802-based contact release film 30 on the second surface of the semiconductor bonding layer 80 is on the first surface 301. . Here, in the semiconductor processing plate 2 of the second embodiment, when the semiconductor processing plate 2 is rolled into a roll shape, the rolling pressure is concentrated on the position where the adhesive layer 60 for a jig exists. In accordance with this situation, adhesion is also easily generated at a position where the adhesive layer 60 for a jig exists. Therefore, whether or not the main board processing sheet 2 is well rolled out from the roll, the adhesion of the first surface 301 of the release film 30 and the second surface 602 of the jig 60 is significantly affected. Therefore, in the semiconductor processing sheet 2, the peeling force β is set at the interface between the second surface 602 of the jig adhesive layer 60 and the first surface 301 of the release film 30. Specifically, the peeling force β is set in a state where the second surface 602 of the jig adhesive layer 60 and the first surface 301 of the release film 30 are laminated, and stored at 40 ° C for 3 days under predetermined conditions. The peeling force of the peeling film 30 to the adhesive layer 60 for a jig. On the other hand, the peeling force α is set to the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 in the same manner as in the semiconductor processing sheet of the first embodiment. .

The adhesive layer 60 for a jig in this embodiment may be composed of a single layer or two or more layers. In the case of multiple layers, it is preferable that the core material enter the space.

The adhesive constituting the adhesive layer 60 for the jig is preferably composed of a non-energy-ray-curable adhesive from the viewpoint of adhesion to a jig such as a ring frame. As the non-energy ray hardening adhesive, it is preferable to have a desired adhesive force and re-peelability. For example, an acrylic adhesive, a rubber adhesive, a silicone adhesive, or a urethane adhesive can be used. Adhesives, polyester-based adhesives, polyvinyl ether-based adhesives, etc. are particularly preferably acrylic-based adhesives whose adhesion and re-peelability are easier to control.

As the core material, a resin film can be generally used, particularly a polyvinyl chloride film such as a polyvinyl chloride film or a vinyl chloride copolymer film, and a polyvinyl chloride film is particularly preferable. The polyvinyl chloride film has a property that it is easy to recover when cooled, even if it is softened by heating. The thickness of the core material is preferably 2 to 200 μm, and particularly preferably 5 to 100 μm.

The thickness of the adhesive layer 60 for a jig is preferably 5 to 200 μm, and particularly preferably 10 to 100 μm from the viewpoint of adhesion to a jig such as a ring frame.

The semiconductor processing sheet 2 having the jig adhesive layer 60 has an arithmetic average roughness Ra of 0.01 to 0.8 μm on the first surface 101 of the base material 10, and the smoothness on this surface is good. At least the base material 10 has high light transmittance for light having a desired wavelength. In addition, since the value of the ratio of the peeling force α to the peeling force B ( α / β ) is 0 or more and less than 1.0, excellent blocking resistance can be exhibited, and the semiconductor processing sheet 2 can be rolled well from the roll. At the same time, undesired peeling does not occur during unwinding. In addition, when the peeling force β is 10 to 1000 mN / 50 mm, when the semiconductor processing sheet 2 is used, the substrate 10, the semiconductor attaching layer 80, and the adhesive layer 60 for the jig can be contained with an appropriate peeling force. The laminated body is peeled from the release film 30.

6. Pre-cut

The sheet for semiconductor processing according to this embodiment may be a so-called pre-cut state in which layers other than the release film 30 are cut and processed into a desired shape. That is, the sheet for semiconductor processing according to this embodiment may also be formed by laminating a laminate film having a shape different from that of the release film 30 in plan view and including a laminate 10 including the substrate 10 and the semiconductor attaching layer 80 in a long plan view. . FIG. 9 is a plan view showing the semiconductor processing sheet 3 according to the third embodiment after being pre-cut, as viewed from the substrate side. On the semiconductor processing sheet 3, a laminate of a base material 10a and a semiconductor attaching layer 80a cut into a circle is provided on the long release film 30 (hereinafter referred to as a "main use part"). A plurality of main use portions are arranged in the longitudinal direction of the release film 30. In addition, both ends of the release film 30 in the longitudinal direction are provided with a laminated body (hereinafter referred to as a "sheet") of the substrate 10b and the semiconductor attaching layer 80b after cutting so as not to contact the main use portion. Residual section "). Fig. 10 is a cross-sectional view taken along line A-A in Fig. 9.

The pre-cut semiconductor processing sheet 3 also satisfies the above-mentioned physical properties and the like for the semiconductor processing sheet 1. In addition, as the respective layers constituting the semiconductor processing sheet 3, the above-mentioned ones for the semiconductor processing sheet 1 can be used.

In addition, the semiconductor processing sheet 2 including the jig adhesive layer 60 can be made into a sheet after pre-cutting. In this plate, an adhesive layer 60 for a jig is provided on the peripheral edge portion of the main use portion.

In the semiconductor processing sheet 3, the main use portion is peeled from the release film 30, and is then attached to a semiconductor wafer, a semiconductor wafer, or the like. On the other hand, the plate remaining portion prevents the rolling pressure from being concentrated on the main use portion when the semiconductor processing plate 3 is wound into a roll shape.

In general, when a pre-cut semiconductor processing sheet is unwound from a roll, the main use part is easily peeled from the release film, and the substrate side of the main use part after this peeling is attached to the second surface of the release film. Waiting bad. However, by using the semiconductor processing sheet 3 of the third embodiment, the occurrence of such defects can be suppressed by the ratio ( α / β ) of the ratio of the peeling force α to the peeling force β being 0 or more and less than 1.0. In addition, since the arithmetic average roughness Ra on the first surface 101 of the base material 10 is 0.01 to 0.8 μm, the smoothness on this surface becomes good and at least the base material 10 has a high light ray for a desired wavelength of light Transmissive. In addition, when the peeling force β is 10 to 1000 mN / 50 mm, when the semiconductor processing sheet 3 is used, the peeling film 30 can be peeled from the semiconductor attaching layer 80 by an appropriate peeling force.

7. Manufacturing method of plate for semiconductor processing

The manufacturing method of the semiconductor processing sheet 1a containing the adhesive layer 20 is not specifically limited, A common method can be used. As a first example of this manufacturing method, first, an adhesive group including a material containing the adhesive layer 20 is prepared. The product and a coating composition for a solvent or a dispersion medium as required. Next, this coating composition is coated on the first surface 301 of the release film 30 using a die coater, a curtain coater, a spray coater, a slit coater, a blade coater, or the like. A coating film is formed. By drying the coating film, the adhesive layer 20 can be formed. Subsequently, by bonding the first surface 201 of the adhesive layer 20 and the second surface 102 of the base material 10, a sheet 1a for semiconductor processing can be obtained. The coating composition system is not particularly limited as long as it can be coated. The component for forming the adhesive layer 20 may be contained in the coating composition as a solute or a dispersant.

When the coating composition contains a crosslinking agent (E), the above-mentioned drying conditions (temperature, time, etc.) may be changed in order to form a crosslinked structure at a required density, or a heat treatment may be separately provided. In order to sufficiently carry out the crosslinking reaction, the above method and the like are usually used to laminate an adhesive layer on a substrate, and then the obtained semiconductor processing sheet 1a is allowed to stand in an environment of, for example, 23 ° C and a relative humidity of 50% for several days. Put it to maturity.

As a second example of the method for manufacturing the semiconductor processing sheet 1a, first, the coating composition is applied on the second surface 102 of the substrate 10 to form a coating film. Next, this coating film is dried to form a laminated body composed of the substrate 10 and the adhesive layer 20. Then, the second surface 202 of the adhesive layer 20 of the laminated body and the first surface 301 of the release film 30 are bonded to each other to obtain a sheet 1a for semiconductor processing.

The manufacturing method of the semiconductor processing sheet 1b containing the adhesive layer 40 is not specifically limited, A common method can be used. For example, by adding an adhesive composition containing a material containing the adhesive layer 40, and further The composition for applying a desired solvent or dispersion medium is applied to the first surface 301 of the release film 30 and dried to form an adhesive layer 40. Subsequently, the first surface 401 of the adhesive layer 40 and the second surface 102 of the base material 10 are bonded to each other to obtain a sheet 1b for semiconductor processing.

The manufacturing method of the semiconductor processing sheet 1c including the protective film formation layer 50 can be manufactured with reference to the manufacturing method of the said semiconductor processing sheet 1b. In particular, in the manufacturing method of the semiconductor processing sheet 1b, the protective film forming layer composition including the material of the protective film forming layer 50 can be replaced with the adhesive composition containing the material of the adhesive layer 40, and A sheet 1c for semiconductor processing can be obtained.

The manufacturing method of the semiconductor processing sheet 1d containing the adhesive layer 20 and the adhesive layer 40 is not specifically limited, A common method can be used. For example, an adhesive composition containing a material containing the adhesive layer 40 and a coating composition further containing a solvent or a dispersion medium as required are applied to the first surface 301 of the release film 30 and dried, To form an adhesive layer 40. Thereby, the laminated body of the peeling film 30 and the adhesive layer 40 can be obtained. Next, the release film 30 can be peeled from the prepared semiconductor processing sheet 1a in advance, and the exposed surface of the adhesive layer 20 side and the surface of the adhesive layer 40 side of the laminated body can be bonded to each other, thereby enabling the A semiconductor processing sheet 1d was obtained.

The semiconductor processing sheet 1e including the adhesive layer 20 and the protective film forming layer 50 can be manufactured by referring to the above-mentioned manufacturing method of the semiconductor processing sheet 1d. In particular, in the method for manufacturing a semiconductor processing sheet 1d, a protective film-forming layer composition including a material of the protective film-forming layer 50 can be replaced with an adhesive composition containing the material of the adhesive layer 40, and were able A semiconductor processing sheet 1e was obtained.

The semiconductor processing sheet 2 including the jig adhesive layer 60 can be manufactured by a common method. For example, it can be manufactured by laminating an adhesive layer 60 for a jig having a desired shape on a surface on the side opposite to the substrate 10 of a laminate including the substrate 10 and the semiconductor bonding layer 80 and the like. Semiconductor processing plate 2.

In addition, as a case where the semiconductor processing sheet 2 including the jig adhesive layer 60 is pre-cut, it can be manufactured as follows, for example. First, a jig for an jig for constituting a jig 60 for a jig is formed into a sheet shape on the peeling surface of the release film 30. Next, the peeling film 30 remains on the inner peripheral edge of the jig adhesive layer 60 of the jig adhesive for plate-like jigs, and the jig adhesive for plate-like jigs is cut (half-cut) and then The inner round part is removed. Next, the side surface of the sheet-like jig for adhesive of the laminated body composed of the sheet-like jig for adhesive and the peeling film 30 after removing the round part was attached to the separately prepared base material 10 and The semiconductor attachment layer 80 side of the multilayer body constituted by the semiconductor attachment layer 80. Thereby, the laminated body which laminated | stacked the peeling film 30, the adhesive agent for sheet-like jigs, the semiconductor sticking layer 80, and the base material 10 in order can be obtained. Finally, in this laminated body, the peeling film 30 remains, and the jig | tool adhesive, the semiconductor bonding layer 80, and the base material 10 are cut | disconnected (half-cut). At this time, the main use portion can be formed by cutting (half cutting) the portion of the outer peripheral edge of the jig adhesive layer 60 with the release film 30 remaining and removing unnecessary portions. Thereby, the adhesive agent for plate-shaped jigs becomes the adhesive layer 60 for ring jigs. Further, by appropriately half-cutting other than the portion of the main use portion, a plate residual portion can also be formed.

The manufacturing method of the pre-cut semiconductor processing sheet 3 is not It is particularly limited, and a commonly used method can be used.

8. How to use the plate for semiconductor processing

The semiconductor processing plates 1, 2, and 3 of this embodiment can be used as a back-side polishing sheet, a dicing sheet, or the like. When using these plates 1, 2, and 3, a laser can be irradiated from the back surface of a plate, and it can cut. In addition, after steps such as back surface grinding and dicing, the shapes of wafers, wafers, and the like can be inspected through the semiconductor processing plates 1, 2, and 3 of this embodiment. In addition, laser printing can be performed on the back surface of a wafer, a wafer, or the like through the semiconductor processing plate of this embodiment.

In addition, the semiconductor processing plates 1b and 1d including the adhesive layer 40 can be used as dicing. Wafer bonding plate. That is, after the wafer is diced on the semiconductor processing sheets 1 b and 1 d and the expansion step is performed as necessary, the obtained wafer can be picked up to obtain a wafer to which an adhesive layer is provided. Furthermore, by using the semiconductor processing plates 1c and 1e including the protective film forming layer 50, a protective film can be formed on the back surface of the wafer. At this time, the semiconductor processing plates 1 c and 1 e including the protective film forming layer 50 are attached to a wafer and the protective film forming layer 50 is cured. Next, the wafer is diced at the semiconductor processing plates 1c and 1e, and an expansion step is performed as necessary. Subsequently, by picking up the obtained wafer, a wafer having a protective film formed on the back surface can be obtained.

The semiconductor processing plates 1, 2, and 3 of this embodiment can be wound into a rolled state for storage or the like. Even when the plates 1, 2 and 3 for semiconductor processing of this embodiment are wound up as described above, since the value of the ratio of the peeling force α to the peeling force β ( α / β ) is 0 or more and less than 1.0, Compared with the adhesion between the layers constituting the semiconductor processing plates 1, 2, and 3 of this embodiment, the adhesion between the semiconductor processing plates 1, 2, and 3 of this embodiment will not be changed. high. Therefore, it is possible to exhibit excellent anti-adhesion properties, to be able to unwind from the rolls of the semiconductor processing plates 1, 2, and 3 of this embodiment, and to suppress peeling between undesired layers during the unwinding. . In addition, since the arithmetic average roughness Ra on the first surface of the base material 10 is 0.01 to 0.8 μm, the smoothness on this surface becomes good, and the base material 10 has high light transmittance for light having a desired wavelength. . As a result, laser cutting, inspection, and laser printing from the back surface can be performed favorably as described above. In addition, since the peeling force β is 10 to 1000 mN / 50 mm, when the wafer is attached to the semiconductor processing plates 1, 2, and 3 of this embodiment, the substrate can be included by using an appropriate peeling force. The laminated body of 10 and the semiconductor attaching layer 80 is peeled from the release film 30.

The embodiments described above are described for easy understanding of the present invention, and are not described for limiting the present invention. Therefore, each element disclosed in the above embodiment also includes all design changes and equivalents belonging to the technical scope of the present invention.

For example, other layers may be interposed between the base material 10 of the semiconductor processing plates 1, 2, and 3 and the semiconductor attaching layer 80 in this embodiment.

[Example]

Hereinafter, the present invention will be described more specifically with examples and the like, but the scope of the present invention is not limited by these examples and the like.

[Example 1]

(1) Manufacturing of substrates

A polyvinyl chloride film was produced as a substrate by a calendering film method. The arithmetic mean roughness Ra of the first surface of this polyvinyl chloride film is 0.03 μm in accordance with JIS K7161: 1994 and the tensile elastic modulus (Young's modulus) measured in the MD direction at 23 ° C. was 250 MPa and the thickness was 80 μm.

The arithmetic average roughness Ra in this example is measured at 10 points in the plane using a contact surface roughness meter ("SURFTEST SV-3000" manufactured by Mitsutoyo Corporation) in accordance with JIS B061: 2013, and the average value is calculated. .

In addition, the above-mentioned base material was evaluated for transmission of laser light for printing (wavelength: 532 nm), transmission of laser light for stealth cutting (wavelength: 1600 nm), and transmission of infrared light for inspection (wavelength: 1069 nm). In either case, it exhibits excellent transmittance.

(2) Preparation of release film

As a release film, a release film (product made by LINTEC Corporation, "SP-PMF381031H") produced by peeling one side (the first side) of a polyethylene terephthalate film with a silicone-based release agent was used. ", Thickness: 38 μm). The arithmetic mean roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic mean roughness Ra of the second surface was 0.3 μm.

(3) Preparation of adhesive composition (I)

18.5 parts by mass of 2-ethylhexyl acrylate (solid content conversion, hereinafter the same), 75 parts by mass of vinyl acetate, 1 part by mass of acrylic acid, 5 parts by mass of methyl methacrylate, and 0.5 part by mass of 2-hydroxyethyl methacrylate Parts were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 600,000.

100 parts by mass of the obtained acrylic copolymer, 60 parts by mass of a bifunctional urethane acrylate oligomer (Mw = 8000) as an energy ray-curable compound, and 6-functional amine methyl groups as an energy ray-curable compound 60 parts by mass of an ester acrylate oligomer (Mw = 2000), 3 parts by mass of α -hydroxycyclohexylphenyl ketone (manufactured by BASF, product name "IRGACURE 184") as a photopolymerization initiator, and used as a crosslink 1.6 parts by mass of trimethylolpropane-modified toluene diisocyanate (manufactured by TOSOH Corporation, product name "CORONATE L") was mixed in a solvent to obtain a coating solution of the adhesive composition (I).

(4) Manufacturing of plates for semiconductor processing

The coating solution of the adhesive composition (I) obtained in the above step (3) was applied to the first surface of the release film produced in the above step (2) using a blade coater. Next, the coating film was dried at 100 ° C for 1 minute, and then subjected to a cross-linking reaction to obtain a laminated body composed of a release film and an adhesive layer having a thickness of 10 µm. Then, by laminating the first surface of the adhesive layer of the laminated body and the second surface of the substrate produced in the above step (1), the substrate, the adhesive layer, and the release film are layered in order. Stacked semiconductor processing plates. Subsequently, this semiconductor processing plate was aged for 7 days in an environment of a temperature of 23 ° C and a relative humidity of 50%.

[Example 2]

(1) Manufacturing of substrates

As the substrate, an ethylene-methacrylic acid copolymer film was produced using a T-die film-forming method. The arithmetic average roughness Ra of the first surface of the ethylene-methacrylic copolymer film was 0.05 μm, and the tensile elastic modulus (Young's modulus) in the MD direction at 23 ° C. measured according to JIS K7161: 1994 was 130 MPa, The thickness is 80 μm.

In addition, for the above-mentioned base material, the transmission of the laser light for printing (wavelength: 532 nm), the transmittance of the laser light for stealth cutting (wavelength: 1600 nm), and the transmission of infrared light (wavelength: 1069 nm) were evaluated. In either case, it exhibits excellent transmittance.

(2) Preparation of adhesive composition (II)

By copolymerizing 99 parts by mass of butyl acrylate and 1 part by mass of acrylic acid, an acrylic copolymer having a weight average molecular weight of 600,000 was obtained.

Next, 100 parts by mass of the obtained acrylic copolymer and 120 parts by mass of dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd. under the product name "KAYARAD DPHA") as an energy ray-curable compound were used as photopolymerization 3 parts by mass of α -hydroxycyclohexyl phenone (manufactured by BASF, product name "IRGACURE184") as a starting agent, and trimethylolpropane-modified toluene diisocyanate (manufactured by TOSOH, product name "CORONATE") L ") 17 parts by mass were mixed in a solvent to obtain a coating solution of the adhesive composition (II).

(3) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 1 except that the base material using the ethylene-methacrylic acid copolymer produced as described above and the adhesive composition (II) were used.

[Example 3]

(1) Manufacturing of substrates

As the substrate, an ethylene-vinyl acetate copolymer film was produced using a T-die film-forming method. The arithmetic average roughness Ra of the first surface of this ethylene-vinyl acetate copolymer film is 0.06 μm, and the tensile elastic modulus (Young's modulus) in the MD direction at 23 ° C. measured according to JIS K7161: 1994 is 75 MPa, The thickness is 100 μm.

In addition, for the above-mentioned base material, the transmission of the laser light for printing (wavelength: 532 nm), the transmittance of the laser light for stealth cutting (wavelength: 1600 nm), and the transmission of infrared light (wavelength: 1069 nm) were evaluated. Sex, either All cases showed excellent transmission.

(2) Preparation of adhesive composition (III)

40 parts by mass of 2-ethylhexyl acrylate, 40 parts by mass of vinyl acetate, and 20 parts by mass of 2-hydroxyethyl acrylate were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 420,000.

Next, 100 parts by mass of the obtained acrylic copolymer and 30.2 parts by mass of 2-methacryloxyethyl isocyanate (MOI) as a compound containing an energy ray-curable group were reacted to obtain energy. An energy ray-curable polymer in which a linearly curable group (methacrylfluorenyl group) is introduced into a side chain.

100 parts by mass of the obtained acrylic copolymer, 3 parts by mass of α -hydroxycyclohexylphenyl ketone (manufactured by BASF, product name "IRGACURE184") as a photopolymerization initiator, and trimethylol as a crosslinking agent 1.1 parts by mass of propylene propane-modified toluene diisocyanate (manufactured by TOSOH Corporation, product name "CORONATE L") was mixed in a solvent to obtain a coating solution of an adhesive composition (III).

(3) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 1 except that the ethylene-vinyl acetate copolymer produced as described above was used as the base material of the material and the adhesive composition (III).

[Example 4]

(1) Manufacturing of substrates

As a base material, a polypropylene film was produced by a T-die film forming method. The arithmetic mean roughness Ra of the first surface of this polypropylene film was 0.3 μm, and the tensile elastic modulus (Young's modulus) in the MD direction at 23 ° C. measured in accordance with JIS K7161: 1994 was 360 MPa, and the thickness was 100 μm.

In addition, for the above-mentioned base material, the transmission of the laser light for printing (wavelength: 532 nm), the transmittance of the laser light for stealth cutting (wavelength: 1600 nm), and the transmission of infrared light (wavelength: 1069 nm) for evaluation In either case, it exhibits excellent transmittance.

(2) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 1 except that the polypropylene produced as described above was used as the base material and the adhesive composition (II) produced in Example 2 was used.

[Example 5]

(1) Manufacturing of release film

One side (first side) of the polyethylene terephthalate film was peeled off using a silicone-based release agent (manufactured by LINTEC, product name "SP-PET381031", thickness: 38 μm). One side (second side) is subjected to a peeling treatment using an alkyd-based release agent. As this alkyd-based release agent, an alkyd-based release agent for forming an alkyd-based release agent layer on a release film (manufactured by LINTEC Corporation, product name "SP-PET38AL-5") is used. One surface of a 38 μm polyethylene terephthalate film is provided with an alkyd-based release agent layer. Thereby, a peeling film obtained by performing a peeling treatment with a polysiloxane-based release agent on the first surface and a peeling treatment by an alkyd-based release agent on the second surface is obtained. The arithmetic mean roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic mean roughness Ra of the second surface was 0.03 μm.

(2) Manufacturing of plates for semiconductor processing

Except for the peeling film produced by using the first surface-type silicone-based release agent and the second surface-type by the alkyd-type release agent manufactured as described above, Other than that, a sheet for semiconductor processing was produced in the same manner as in Example 1.

[Example 6]

A release film was produced in the same manner as in Example 2 except that the first surface was subjected to a release treatment with a polysiloxane-based release agent and the second surface was removed with an alkyd-based release agent. Plates for semiconductor processing.

[Example 7]

(1) Manufacturing of release film

One side (the first side) of a polyethylene terephthalate film was peeled off using a silicone-based release agent (manufactured by IINTEC Corporation, product name "SP-PET382150", thickness: 38 μm). On one side (second side), the peeling treatment was performed using the same alkyd-based peeling agent as that used in Example 6. Thereby, a peeling film obtained by performing a peeling treatment with a polysiloxane-based release agent on the first surface and a peeling treatment by an alkyd-based release agent on the second surface is obtained. The arithmetic mean roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic mean roughness Ra of the second surface was 0.03 μm.

(2) Manufacturing of plates for semiconductor processing

A semiconductor process was manufactured in the same manner as in Example 2 except that the first surface-based polysiloxane-based release agent was used for a peeling treatment and the second surface was peeled with an alkyd-based release agent. With plates.

[Example 8]

(1) Preparation of release film

As the release film, a release film (product made by LINTEC Corporation, product name "SP-PE1301031") obtained by peeling one side (first side) of a polyethylene terephthalate film using a silicone-based release agent, Thickness: 30 μm). The arithmetic mean roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic mean roughness Ra of the second surface was 0.3 μm.

(2) Preparation of adhesive composition (IV)

80 parts by mass of butyl acrylate and 20 parts by mass of 2-hydroxyethyl acrylate were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 700,000.

Next, 100 parts by mass of the obtained acrylic copolymer and 30.2 parts by mass of 2-methacryloxyethyl isocyanate (MOI) as a compound containing an energy ray-curable group were reacted to obtain energy. An energy ray-curable polymer in which a linearly curable group (methacrylfluorenyl group) is introduced into a side chain.

100 parts by mass of the obtained acrylic copolymer, 3 parts by mass of α -hydroxycyclohexylphenyl ketone (manufactured by BASF, product name "IRGACURE184") as a photopolymerization initiator, and trimethylol as a crosslinking agent 0.5 mass of propylene propane-modified toluene diisocyanate (manufactured by TOSOH Corporation, product name "CORONATE L") was mixed in a solvent to obtain a coating solution of an adhesive composition (IV).

(3) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 2 except that the 30 μm-thick release film and the adhesive composition (IV) produced as described above were used.

[Example 9]

Preparation of release film

As the release film, a release film (product made by LINTEC Corporation, product name "SP-PE1301031") obtained by peeling one side (first side) of a polyethylene terephthalate film using a silicone-based release agent, Thickness: 50 μm). The arithmetic mean roughness Ra of the first surface of this release film was 0.03 μm, and the arithmetic mean roughness Ra of the second surface was 0.3 μm.

(2) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 8 except that the release film having a thickness of 50 μm produced as described above was used.

[Example 10]

(1) Manufacturing of a first laminated body including an adhesive layer

The following acrylic polymer, thermosetting resin, filler, silane coupling agent, and cross-linking agent were mixed to obtain an adhesive composition, and then diluted with methyl ethyl ketone so that the solid content concentration became 20% by mass. Agent coating solution.

Acrylic polymer: 100 parts by mass of a copolymer composed of 95 parts by mass of methyl acrylate and 5 parts by mass of 2-hydroxyethyl acrylate (Mw: 500,000, Mw / Mn: 2.9, Tg: 9 ° C)

Thermosetting resin: 30 parts by mass of cresol-based cresol novolac epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name "CNA-147")

Thermal hardener: 6 parts by mass of aralkylphenol resin (manufactured by Mitsui Chemicals Co., Ltd., product name "Milex XLC-4L")

Filler: 35 parts by mass of methacrylic acid-modified silicon oxide filler (average particle size 0.05 μm, manufactured by ADMATECHS, 3-methacrylic acid methoxypropyltrimethoxysilane)

Silane coupling agent: (Mitsubishi Chemical Corporation, product name "MKC SILICATE MSEP 2") 0.5 parts by mass

Crosslinking agent: 1.5 parts by mass of aromatic polyisocyanate (manufactured by TOSOH, product name "CORONATE L")

Prepare one side of polyethylene terephthalate (PET) film The first release film (manufactured by LINTEC Corporation, product name "SP-PET381031", thickness: 38 μm), and a polysiloxane-based release agent layer formed on one side of a PET film. A second release film (manufactured by LINTEC, product name "SP-PET381130", thickness: 38 μm).

Next, the coating solution of the said adhesive composition was apply | coated on the peeling surface of the 1st peeling film using the blade coater, and it dried, and the 5 μm-thick adhesive layer was formed on the peeling surface of the 1st peeling film. . Subsequently, the release surface of the second release film was superposed on the adhesive layer, and the two were bonded together to obtain a first build-up layer composed of the first release film, the adhesive layer (thickness: 5 μm), and the second release film. body. Subsequently, this first laminated body was aged in an environment of a temperature of 23 ° C. and a relative humidity of 50% for 7 days.

(2) Manufacturing of a second laminated body including an adhesive layer

The following adhesive main agent and cross-linking agent were mixed to obtain an adhesive composition (V), and then diluted with methyl ethyl ketone so that the solid content concentration became 25% by mass to prepare a coating of the adhesive composition (V). Cloth solution.

Adhesive base agent: (meth) acrylate copolymer (manufactured by Nippon Synthetic Chemical Industry Co., Ltd., 60 parts by mass of 2-ethylhexyl acrylate, 30 parts by mass of methyl methacrylate, and 10 parts by mass of 2-hydroxyethyl acrylate. Copolymer obtained by polymerization, weight average molecular weight: 600,000) 100 parts by mass

Crosslinking agent: 20 parts by mass of xylene diisocyanate adduct of trimethylolpropane (made by Mitsui Takeda Chemical Company, product name "TAKENATE D11ON")

The third release film is a release film prepared by forming a silicone-based release agent layer on one side of a PET film (manufactured by LINTEC, product name) "SP-PET381031", thickness: 38 μm).

A polypropylene film was used as a substrate. Here, the polypropylene film has an arithmetic average roughness Ra of 0.3 μm on the first surface and a thickness of 100 μm.

Next, the coating solution of the said adhesive composition (V) is apply | coated on the peeling surface of a 3rd peeling film using a doctor blade coater, and it is made to dry, and it is made to crosslink and react, and a 3rd peeling film is obtained. A laminated body composed of an adhesive layer having a thickness of 5 μm. Subsequently, the second surface of the substrate is bonded to the surface of the adhesive layer opposite to the third release film to obtain a second laminate composed of the substrate, the adhesive layer, and the third release film. This was aged for 7 days in an environment of a temperature of 23 ° C and a relative humidity of 50%.

(3) Manufacturing of a third laminated body including an adhesive layer for a jig

After mixing the following components of the main adhesive agent and the cross-linking agent to obtain an adhesive composition for a jig, the solution was diluted with toluene so that the solid content concentration became 15% by mass to prepare a coating solution for an adhesive composition for a jig. .

Adhesive base agent: (meth) acrylate copolymer (copolymer obtained by copolymerizing 69.5 parts by mass of butyl acrylate, 30 parts by mass of methyl acrylate and 0.5 parts by mass of 2-hydroxyethyl acrylate, weight average molecular weight: 500,000 100 parts by mass

Crosslinking agent: 5 parts by mass of an aromatic polyisocyanate (manufactured by TOSOH, product name "CORONATE L")

4th and 5th release films (manufactured by LINTEC Corporation, product name "SP-PET381031", thickness: 38 μm) prepared by forming a polysiloxane-based release agent layer on one side of a PET film, and polyvinyl chloride as a core material Ethylene film (manufactured by Okamoto Co., Ltd., thickness: 50 μm).

Next, the coating solution of the adhesive composition for jigs was applied to a peeling surface of a fourth release film using a doctor blade coater and dried, and a 5 μm-thick layer was formed on the peeling surface of the fourth release film. The first adhesive layer. Subsequently, the core material is bonded to the first adhesive layer to obtain a laminated body A composed of a core material, a first adhesive layer, and a fourth release film.

Next, the coating solution of the adhesive composition for jigs was applied to a peeling surface of the fifth release film using a doctor blade coater and allowed to dry to form a thickness of 5 μm on the peeling surface of the fifth release film. The second adhesive layer. Subsequently, the second adhesive layer was bonded to the exposed surface of the core material of the laminated body A to obtain a fourth release film / first adhesive layer / core material / second adhesive layer / fifth release film. The third laminated body. Subsequently, this third laminated body was aged for 7 days in an environment of a temperature of 23 ° C and a relative humidity of 50%. Here, the third laminated body is a 60 μm-thick adhesive layer for a jig composed of a first adhesive layer, a core material, and a second adhesive layer.

(4) Manufacturing of the fourth laminated body

The 2nd peeling film was peeled from the 1st laminated body obtained by said (1), and the adhesive layer was exposed. On the other hand, the 3rd peeling film was peeled from the 2nd laminated body obtained by said (2), and the adhesive layer was exposed. The first laminated body and the second laminated body are bonded to the adhesive layer so that the adhesive layer is in contact with each other to obtain a first layer obtained by laminating a substrate, an adhesive layer, an adhesive layer, and a first release film. 4 laminated body.

(5) Manufacturing of plates for semiconductor processing

The 5th peeling film was peeled from the 3rd laminated body obtained by said (3), and the 4th peeling film remained, and the part of the inner peripheral edge of the adhesive layer for jigs was cut from the 2nd adhesive layer side, and the inner side was cut | disconnected. The round part is removed. At this time, the adhesive layer for the jig The diameter of the inner periphery is set to 230 mm.

The 1st peeling film was peeled from the 4th laminated body obtained by said (4), and the exposed adhesive layer and the adhesive agent for jig | tool exposed on the 3rd laminated body were laminated and pressure-bonded. Subsequently, the fourth release film on the third laminated body was left, and a portion of the outer peripheral edge of the semiconductor processing sheet was cut from the substrate side and the outer portion was removed. At this time, the diameter of the outer peripheral edge of the semiconductor processing plate was set to 270 mm.

In this way, an adhesive layer formed on the substrate by an adhesive layer (thickness: 5 μm), laminated on the opposite side of the adhesive layer from the substrate, and opposite to the adhesive layer on the adhesive layer A semiconductor processing plate composed of a ring-shaped jig adhesive layer laminated on the side peripheral edge layer and a fourth release film laminated on the opposite side of the adhesive layer of the jig adhesive layer from the adhesive layer. sheet. The arithmetic average roughness Ra of the surface (first surface) on the side of the adhesive layer for the fourth release film of the jig is 0.03 μm, and the first surface is the arithmetic average of the surface on the opposite side (second surface). The roughness Ra is 0.3 μm.

[Example 11]

(1) Manufacturing of a first laminated body including a protective film forming layer

The following adhesive polymers, thermosetting resins, thermoactive latent epoxy resin hardeners, hardening accelerators, fillers, colorants, and silane coupling agents are mixed to obtain a protective film-forming layer composition, and then the solid content concentration is determined. The coating solution of 50% by mass was diluted with methyl ethyl ketone to prepare a protective film forming layer composition.

Binder polymer: (meth) acrylate copolymer (10 parts by mass of n-butyl acrylate, 70 parts by mass of methyl acrylate, and 5 parts by mass of propylene methacrylate Part, and a copolymer obtained by copolymerizing 15 parts by mass of 2-hydroxyethyl acrylate, weight average molecular weight: 800,000, glass transition temperature: -1 ° C) 150 parts by mass

Thermosetting composition:

60 parts by mass of bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER828", epoxy equivalent 184 to 194 g / eq)

10 parts by mass of bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name "jER1055", epoxy equivalent 800 ~ 900g / eq)

30 parts by mass of dicyclopentadiene epoxy resin (made by Dainippon INK Chemical Industry Co., Ltd., product name "Epiclon HP-7200HH", epoxy equivalent 255 to 260 g / eq)

Thermally active latent epoxy resin hardener: 2 parts by mass of cyanoguanidine (manufactured by ADEKA Corporation, product name "ADEKA HARDENER-EH3636AS", active hydrogen content 21g / eq)

Hardening accelerator: 2 parts by mass of 2-phenyl-4,5-dimethylol imidazole (manufactured by Shikoku Chemical Industry Co., Ltd., product name "CUREZOLE 2PHZ")

Filler: 320 parts by mass of silica filler (manufactured by ADMATECHS, product name "SC2050MA", average particle diameter: 0.5 μm)

Colorant: 1.2 parts by mass of carbon black (manufactured by Mitsubishi Chemical Corporation, product name "# MA650", average particle size: 28 nm)

Silane coupling agent: (manufactured by Shin-Etsu Chemical Co., Ltd., product name "KBM-403") 2 parts by mass

A first release film (manufactured by LINTEC Corporation, product name "SP-PET381031", thickness: 38 μm) prepared by forming a polysiloxane-based release agent layer on one side of a polyethylene terephthalate (PET) film, And a second release film (made by LINTEC Corporation, Product name "SP-PET381130", thickness: 38 μm).

First, the coating solution of the protective film forming layer composition was applied to a peeling surface of a first release film using a doctor blade coater and allowed to dry, and a thickness of 25 μm was formed on the peeling surface of the first release film. The protective film forms a layer. Subsequently, the release surface of the second release film was superposed on the protective film formation layer and the two were bonded together to obtain a first release film consisting of the first release film, the protective film formation layer (thickness: 25 μm), and the second release film. 1 laminated body. This first laminated body was aged for 7 days in an environment of a temperature of 23 ° C and a relative humidity of 50%.

(2) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 10 except that the first laminated body produced as described above was used.

[Example 12]

(1) Preparation of adhesive composition (VI)

68.5 parts by mass of butyl acrylate, 30 parts by mass of methacrylic acid, 0.5 parts by mass of 2-hydroxyethyl acrylate, and 1 part by mass of acrylamide were copolymerized to obtain an acrylic copolymer having a weight average molecular weight of 620,000.

Next, 100 parts by mass of the obtained acrylic copolymer and 10 parts by mass of trimethylolpropane-modified toluene diisocyanate (manufactured by TOSOH Corporation, product name "CORONATE L") as a crosslinking agent were mixed in a solvent, and A coating solution of the adhesive composition (VI) was obtained.

(2) Manufacturing of plates for semiconductor processing

A sheet for semiconductor processing was produced in the same manner as in Example 1 except that the adhesive composition (VI) produced as described above was used.

[Comparative Example 1]

Except that a release film (manufactured by LINTEC Corporation, product name "SP-PET381031", thickness: 38 µm) was used as the release film, a sheet for semiconductor processing was produced in the same manner as in Example 1. The release film was made of polysiloxane. A release agent is obtained by peeling one side (first side) of a polyethylene terephthalate film. The arithmetic mean roughness Ra of the first surface of the release film was 0.03 μm, and the arithmetic mean roughness Ra of the other surface (second surface) was 0.05 μm.

[Comparative Example 2]

Except that a release film (manufactured by LINTEC Corporation, product name "SP-PET381031", thickness: 38 µm) was used as the release film, a sheet for semiconductor processing was produced in the same manner as in Example 3. The release film was made of polysiloxane. A release agent is obtained by peeling one side (first side) of a polyethylene terephthalate film. The arithmetic mean roughness Ra of the first surface of the release film was 0.03 μm, and the arithmetic mean roughness Ra of the other surface (second surface) was 0.05 μm.

[Comparative Example 3]

Except for using a release film made of a polyethylene terephthalate film (manufactured by Mitsubishi Resin Corporation, product name "Diafoil (registered trademark) T-10038", thickness: 38 μm) as a release film, it was the same as in Example 2. Manufacturing semiconductor processing plates. The arithmetic mean roughness Ra of both surfaces of the release film was 0.05 μm.

[Test Example 1]

(Measurement of peeling force α )

The semiconductor processing plates produced in the examples and comparative examples were cut into a width of 50 mm × a length of 100 mm. At this time, it cuts so that the flow direction (MD direction) at the time of manufacture of the board | substrate for semiconductor processing may become a longitudinal direction. The thus-cut semiconductor processing sheet was laminated with 10 substrates with the base material as the upper side, and This laminated body was sandwiched from above and below using a glass plate having a length of 75 mm × 15 mm × a thickness of 5 mm. Then, with a weight of 500 g being placed on the upper glass plate, it was stored in a hot and humid accelerator (manufactured by ESPEC Corporation, product name "SH641") at 40 ° C for 3 days. When the sheet for semiconductor processing contains an energy ray-curable material, it is stored in a state where the laminated body is shielded from light.

After the storage is completed, the semiconductor processing board located at the outermost layer and the two conductor processing boards adjacent to the semiconductor processing board from the laminated body are set as test samples in a state where they are overlapped. And apart. Next, the release film located on the outermost layer of the measurement sample was peeled, and the exposed adhesive surface was bonded to a stainless steel plate using a double-sided adhesive tape and fixed to a universal tensile tester (manufactured by ORIENTEC, product name: TENSILON). UTM-4-100). Subsequently, under conditions of a temperature of 23 ° C. and a relative humidity of 50% RH, a semiconductor processing plate located at the farthest end of the stainless steel plate, and a semiconductor processing plate overlapped thereon were stretched at a speed of 300 mm / minute at 180 ° direction peeling. That is, it peels between the 1st surface of a base material, and the 2nd surface of a release film. The force at this time was measured and it was set as peeling force ( alpha) (mN / 50mm). The results are shown in Table 2. When the peeling force α is so small that it cannot be measured, or when the release film has been peeled from the substrate before the measurement, the measurement result is set to "unmeasureable (0)".

[Test Example 2]

(Measurement of peeling force β )

A laminated body composed of ten semiconductor processing plates was produced in the same manner as in Test Example 1 above, and was stored at 40 ° C. for 3 days. One piece of semiconductor processing plate was taken out of this laminated body, and the first side of the substrate was bonded to a stainless steel plate using double-sided adhesive tape and fixed to a universal tensile tester (manufactured by ORIENTEC, product name: TENSILON UTM-4 -100). Subsequently, under conditions of a temperature of 23 ° C. and a relative humidity of 50 RH, only the peeling film was peeled at a stretching speed of 300 mm / min in a 180 ° direction. That is, it peels between the 1st surface of a peeling film, and the 2nd surface of an adhesive agent. The force at this time was measured and it was set as the peeling force β (mN / 50mm). The results are shown in Table 2. Then, based on this peeling force β and the peeling force α measured in Test Example 1, a value ( α / β ) of the ratio of the peeling force α to the peeling force β was calculated. At this time, when the measurement result of the peeling force α is "unable to measure (0)", the value of the ratio ( α / β ) is set to "0". The results are shown in Table 2.

[Test Example 3]

(Evaluation from the roll)

The semiconductor processing plates produced in the examples and comparative examples were prepared as long strips having a width of 290 mm. Then, it is deeply engraved from the base material side, and as shown in FIG. 9, a circular main use portion and a plate residual portion are formed. At this time, only the layers other than the release film were cut (half-cut), and the diameter of the main use portion was set to 270 mm. Subsequently, the base material and the adhesive layer (which may further be an adhesive layer or a protective film-forming layer) other than the main use portion and the plate remaining portion are removed. Thereby, 100 semiconductor processing plates having a main use portion were obtained. This sheet for semiconductor processing is wound up so that the base material side becomes the outer side and becomes a roll shape.

The thus-obtained roll-shaped semiconductor processing sheet was stored in a damp heat accelerator (manufactured by ESPEC Corporation, product name "SH641") at 40 ° C for 3 days. When the sheet for semiconductor processing contains an energy ray-curable material, it is stored in a state where the laminated body is shielded from light.

After the storage is completed, a wafer bonding machine (manufactured by LINTEC, product name "RAD-2500m / 8") is used to unwind the semiconductor processing sheet that has been wound into a roll. Then, an area where the main use portion has a 20-piece portion at both ends in the longitudinal direction of the semiconductor processing plate (that is, an area outside the roll where the main use portion has a 20-piece portion, and There is an area of 20 pieces in the main use part on the inner part), and check whether it can be rolled out well. At this time, when the 20 pieces of the main use portion can be continuously and well rolled out in any area, it is evaluated as ○. On the other hand, the second surface of the release film was inadequate to the main use portion which was superimposed thereunder and could not be rolled out, and was evaluated as × even when one sheet was produced. The results are shown in Table 2.

[Test Example 4]

(Fitted evaluation)

In the same manner as in Test Example 3, a roll-shaped semiconductor processing sheet was produced and stored at 40 ° C for 3 days. Subsequently, the main use part was peeled from the release film of this roll using a wafer bonding machine (manufactured by LINTEC, product name "RAD-2500m / 8"), and the main use part was attached (attached) to the semiconductor Wafer. When this operation was continued and repeated 20 times, and it was completed satisfactorily, it was evaluated as ○. On the other hand, when a bonding failure occurs due to a defective peeling of the main use portion from the release film, etc., it is evaluated as ×. The results are shown in Table 2.

The structures of the semiconductor processing plates manufactured in the examples and comparative examples are summarized in Table 1. The details of the abbreviations described in Table 1 are as follows.

[Substrate]

． PVC: Polyvinyl chloride

． EMAA: ethylene-methacrylic acid copolymer

． EVA: ethylene-vinyl acetate copolymer

． PP: Polypropylene

[Peel film]

． PET: polyethylene terephthalate

[Test Example 5]

(Evaluation of light transmittance)

Using a wafer bonding machine (manufactured by LINTEC, product name "RAD-2500m / 8"), the semiconductor processing plate and ring frame were attached to a silicon wafer having a thickness of 350 μm after storage for 3 days in Test Example 3. Round mirror. Subsequently, using a dicing apparatus (manufactured by DISCO Corporation, product name "DFD-651"), the silicon wafer was diced under the following conditions.

Cutting conditions:

． Workpiece (object to be cut): Silicon wafer (size: 6 inches, thickness: 350 μm, attachment surface: mirror surface)

． Cutting blade: made by DISCO, product name 127HECC "

． Blade revolution: 30,000rpm

． Cutting speed: 10mm / s

． Cut depth: the cut from the opposite side of the substrate to the cutting device table to a depth of 20 μm

． Cutting size: 5mm × 5mm

For the wafer attached to the semiconductor processing plate obtained by the dicing described above, the semiconductor processing plate is visually transmitted through the semiconductor processing side from the side opposite to the wafer (the second surface of the substrate). It is checked whether the peripheral edge portion and the corner portion of the wafer can be identified. In addition, for the use of In the case of semiconductor processing plates, the peripheral and corner portions of the wafer with an adhesive are confirmed. In the case of using a semiconductor processing plate having a protective film formation layer, the wafers with a protective film are confirmed. Peripheral and corner. Those who could confirm the periphery and corners evaluated the light transmittance (visible light transmittance) as good (○), and those who could not confirm evaluated the light transmittance (visible light transmittance) as bad (×). The results are shown in Table 2.

As can be understood from Table 2, while the sheet for semiconductor processing of the example has excellent light transmittance, it is possible to obtain excellent evaluations both when it is unwound from the roll and when it is bonded. On the other hand, in the sheet for semiconductor processing of the comparative example, any one of unwinding and bonding from a roll was defective.

Industrial availability

The semiconductor processing sheet of the present invention can be suitably used as a dicing sheet or a dicing sheet, for example. Wafer bonding plate, protective film forming layer integrated dicing sheet, and the like. Generally according to the invention,

1‧‧‧Semiconductor processing plate

10‧‧‧ Substrate

101‧‧‧Part 1

102‧‧‧Part 2

30‧‧‧ peeling film

80‧‧‧Semiconductor attachment layer

301‧‧‧Part 1

302‧‧‧Part 2

801‧‧‧Part 1

802‧‧‧Part 2

Claims (10)

A semiconductor processing plate includes at least the following semiconductor processing plates: a substrate having a first surface and a second surface located on a side opposite to the first surface; a semiconductor attachment layer and a cover layer A second surface of the substrate, a first surface of the substrate near the substrate, a second surface of the substrate near the distal surface, and a release film laminated on the semiconductor substrate The second surface side of the layer has a first surface on a proximal end side of the semiconductor attaching layer and a second surface on a distal end side of the semiconductor attaching layer, and is characterized in that: The arithmetic average roughness Ra is 0.01 to 0.8 μm. The first surface of the substrate and the second surface of the release film are laminated and stored at 40 ° C. for 3 days. Then, the first surface of the substrate and the release film are laminated. The peeling force at the interface of the second surface is set to α , and the second surface of the semiconductor attachment layer and the first surface of the release film are attached and stored at 40 ° C for 3 days. When the peeling force at the interface between the second surface and the first surface of the release film is set to β , the value of the ratio of α to β (α / β) is 0 or more and less than 1.0, and the aforementioned peeling force β is 10 to 1000 mN / 50 mm. The plate for semiconductor processing according to item 1 of the scope of patent application, wherein the arithmetic mean roughness Ra of the second surface of the release film is 0.02 to 0.8 μm. The sheet for semiconductor processing according to item 1 of the scope of patent application, wherein the release film is provided with a release agent layer on each of the first surface side and the second surface side thereof. The semiconductor processing board according to item 1 of the scope of patent application, wherein the aforementioned semiconductor attaching layer is an adhesive layer. The sheet for semiconductor processing according to item 1 of the scope of patent application, wherein the semiconductor attaching layer is an adhesive layer. The sheet for semiconductor processing according to item 1 of the scope of patent application, wherein the aforementioned semiconductor attaching layer is a protective film forming layer. The semiconductor processing sheet according to item 1 of the scope of the patent application, wherein the semiconductor attaching layer is composed of an adhesive layer and an adhesive layer located between the adhesive layer and the release film. The semiconductor processing board according to item 1 of the scope of the patent application, wherein the semiconductor attaching layer is composed of an adhesive layer and a protective film forming layer located between the adhesive layer and the release film. The sheet for semiconductor processing according to item 1 of the scope of patent application, wherein the sheet for semiconductor processing is formed by laminating a long strip of the release film, and the laminate has a release film and the release film in plan view. They are different shapes and include the aforementioned substrate and the aforementioned semiconductor attaching layer. A semiconductor processing plate includes at least the following semiconductor processing plate: a substrate having a first surface and a second surface on a side opposite to the first surface; a semiconductor attaching layer, Laminated on the second surface side of the substrate, has a first surface on the proximal side of the substrate, and has a second surface on the distal side of the substrate; an adhesive layer for jigs is laminated on The second surface side of the semiconductor attaching layer, a first surface on a proximal end side of the semiconductor attaching layer, and a second surface on a distal end side of the semiconductor attaching layer; and a release film having at least a layer The second surface side of the adhesive layer for jigs has a first surface on the proximal side of the adhesive layer for jigs and the second surface on the distal side of the adhesive layer for jigs; It is characterized in that the arithmetic average roughness Ra of the first surface of the substrate is 0.01 to 0.8 μm, the first surface of the substrate and the second surface in the release film are laminated and stored at 40 ° C. for 3 days The peeling force at the interface between the first surface of the substrate and the second surface of the release film is set to α , and the first The peeling force at the interface between the second surface of the adhesive layer for the jig and the first surface of the release film after the two surfaces were attached to the first surface of the release film and stored at 40 ° C. for 3 days was set to β. In this case, the value of the ratio of α to β (α / β) is 0 or more and less than 1.0, and the aforementioned peeling force β is 10 to 1000 mN / 50 mm.