TWI729182B - 濺鍍靶用銅材料及濺鍍靶 - Google Patents

濺鍍靶用銅材料及濺鍍靶 Download PDF

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Publication number
TWI729182B
TWI729182B TW106126537A TW106126537A TWI729182B TW I729182 B TWI729182 B TW I729182B TW 106126537 A TW106126537 A TW 106126537A TW 106126537 A TW106126537 A TW 106126537A TW I729182 B TWI729182 B TW I729182B
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TW
Taiwan
Prior art keywords
less
sputtering
mass
sputtering target
copper material
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TW106126537A
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English (en)
Chinese (zh)
Other versions
TW201816134A (zh
Inventor
矢野翔一郎
坂本敏夫
佐藤志信
Original Assignee
日商三菱綜合材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 日商三菱綜合材料股份有限公司 filed Critical 日商三菱綜合材料股份有限公司
Publication of TW201816134A publication Critical patent/TW201816134A/zh
Application granted granted Critical
Publication of TWI729182B publication Critical patent/TWI729182B/zh

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW106126537A 2016-08-26 2017-08-07 濺鍍靶用銅材料及濺鍍靶 TWI729182B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-165553 2016-08-26
JP2016165553A JP6900642B2 (ja) 2016-08-26 2016-08-26 スパッタリングターゲット用銅素材

Publications (2)

Publication Number Publication Date
TW201816134A TW201816134A (zh) 2018-05-01
TWI729182B true TWI729182B (zh) 2021-06-01

Family

ID=61245698

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106126537A TWI729182B (zh) 2016-08-26 2017-08-07 濺鍍靶用銅材料及濺鍍靶

Country Status (5)

Country Link
JP (1) JP6900642B2 (ja)
KR (1) KR102426482B1 (ja)
CN (1) CN109312425B (ja)
TW (1) TWI729182B (ja)
WO (1) WO2018037840A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6642763B2 (ja) * 2017-10-30 2020-02-12 三菱マテリアル株式会社 超伝導安定化材、超伝導線及び超伝導コイル
JP2020094241A (ja) * 2018-12-13 2020-06-18 三菱マテリアル株式会社 純銅材、電子・電気機器用部材、放熱用部材
JP7131376B2 (ja) * 2018-12-27 2022-09-06 三菱マテリアル株式会社 スパッタリングターゲット用銅素材

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176769A (ja) * 1997-12-15 1999-07-02 Toshiba Corp スパッタリングターゲットおよび銅配線膜
JP2002294438A (ja) * 2001-04-02 2002-10-09 Mitsubishi Materials Corp 銅合金スパッタリングターゲット

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3975414B2 (ja) 1997-11-28 2007-09-12 日立金属株式会社 スパッタリング用銅ターゲットおよびその製造方法
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
WO2008030368A1 (en) * 2006-09-08 2008-03-13 Tosoh Smd, Inc. Copper sputtering target with fine grain size and high electromigration resistance and methods of making the same
JP4421586B2 (ja) 2006-09-21 2010-02-24 株式会社東芝 スパッタリングターゲットの製造方法および銅配線膜の製造方法
JP6727749B2 (ja) * 2013-07-11 2020-07-22 三菱マテリアル株式会社 高純度銅スパッタリングターゲット用銅素材及び高純度銅スパッタリングターゲット
JP5828350B2 (ja) * 2014-04-11 2015-12-02 三菱マテリアル株式会社 円筒型スパッタリングターゲット用素材の製造方法
JP5783293B1 (ja) * 2014-04-22 2015-09-24 三菱マテリアル株式会社 円筒型スパッタリングターゲット用素材
JP2016079450A (ja) * 2014-10-15 2016-05-16 Ｊｘ金属株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176769A (ja) * 1997-12-15 1999-07-02 Toshiba Corp スパッタリングターゲットおよび銅配線膜
JP2002294438A (ja) * 2001-04-02 2002-10-09 Mitsubishi Materials Corp 銅合金スパッタリングターゲット

Also Published As

Publication number Publication date
WO2018037840A1 (ja) 2018-03-01
KR102426482B1 (ko) 2022-07-27
CN109312425A (zh) 2019-02-05
KR20190042491A (ko) 2019-04-24
CN109312425B (zh) 2022-01-14
JP6900642B2 (ja) 2021-07-07
TW201816134A (zh) 2018-05-01
JP2018031064A (ja) 2018-03-01

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