TWI724351B - 附有載體之銅箔 - Google Patents

附有載體之銅箔 Download PDF

Info

Publication number
TWI724351B
TWI724351B TW107144664A TW107144664A TWI724351B TW I724351 B TWI724351 B TW I724351B TW 107144664 A TW107144664 A TW 107144664A TW 107144664 A TW107144664 A TW 107144664A TW I724351 B TWI724351 B TW I724351B
Authority
TW
Taiwan
Prior art keywords
layer
carrier
copper foil
item
copper
Prior art date
Application number
TW107144664A
Other languages
English (en)
Other versions
TW201934781A (zh
Inventor
石井林太郎
柳井威範
松浦宜範
Original Assignee
日商三井金屬鑛業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三井金屬鑛業股份有限公司 filed Critical 日商三井金屬鑛業股份有限公司
Publication of TW201934781A publication Critical patent/TW201934781A/zh
Application granted granted Critical
Publication of TWI724351B publication Critical patent/TWI724351B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/085—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/341—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one carbide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/146—By vapour deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/12—Copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2313/00—Elements other than metals
    • B32B2313/04—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0147—Carriers and holders
    • H05K2203/016—Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/088—Using a vapour or mist, e.g. cleaning using water vapor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12188—All metal or with adjacent metals having marginal feature for indexing or weakened portion for severing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12229—Intermediate article [e.g., blank, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12451—Macroscopically anomalous interface between layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12625—Free carbon containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12882—Cu-base component alternative to Ag-, Au-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y10T428/12924—Fe-base has 0.01-1.7% carbon [i.e., steel]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

本發明係一種附有載體之銅箔，其中，加以提供：即使以350℃以上之高温，進行長時間加熱之後，亦可保持安定之剝離性的附有載體之極薄銅箔。此附有載體之極薄銅箔係具備：由玻璃或陶瓷所構成之載體，和設置於載體上，由選自Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga及Mo所成的群之至少1種類的金屬所構成之中間層，和設置於中間層上，包含碳層及金屬氧化物層，或包含金屬氧化物及碳之剝離層，和設置於剝離層上之極薄銅層者。

Description

附有載體之銅箔
本發明係有關附有載體之銅箔。
近年，為了提高印刷配線板之安裝密度而作為小型化，而成為呈廣泛進行印刷配線板之多層化。如此之多層印刷配線板係在許多攜帶用電子機器，將輕量化或小型化作為目的而加以利用。並且，對於此多層印刷配線板，係要求層間絕緣層之厚度更減低，以及作為配線板之更一層的輕量化。
作為滿足如此要求之技術，加以採用使用聚結堆積法之多層印刷配線板的製造方法。聚結堆積法係指未使用所謂之核心基板，而視交互層積(堆積)絕緣層與配線層而作為多層化之方法。在聚結聚集法中，係加以提案有呈可容易地進行支持體與多層印刷配線板之剝離地，使用附有載體之銅箔者。例如，對於專利文獻1(日本特開2005-101137號公報)，係加以揭示有：包含於附有載體之銅箔的載體面，貼上絕緣樹脂層而作為支持體，再於附有載體之銅箔之極薄銅層側，經由光阻加工，圖案電解銅電鍍，光阻膜除去等之工程，形成第一配線導體之後，層積絕緣材料進行熱壓加工等而形成聚集配線層，剝離附有載體之支持基板，除去極薄銅層者之半導體元件搭載用封裝基板的製造方法。
在如此之多層印刷配線板之製造工程中，每層積絕緣材料，進行熱壓加工之故，對於附有載體之銅箔係成為以高溫進行長時間加熱者。另外，此熱壓加工之加熱溫度係依存於所層積之絕緣材料的硬化溫度之故，其溫度係經由絕緣材料的種類而有所差異，例如，廣泛為160~400℃。此點，知道有熱壓加工之加熱溫度則越高溫，剝離強度則越上升而失去剝離性者。
提案有幾個對於伴隨著加熱之剝離強度的上升可進行對策之附有載體的銅箔。例如，對於專利文獻2(日本特開2007-307767號公報)，係揭示有依序具備載體，作為接合界面層之碳層，及銅箔之附有載體的銅箔，而即使在以超過180℃之高溫進行加熱之後，亦可作為可容易地剝離載體箔與銅箔。另外，對於專利文獻3(日本特開2006-22406號公報)，係揭示有於載體的表面，依序層積鉻層等之剝離層，和鎳層等之擴散防止層，和電性銅電鍍層所成之附有載體之銅箔，而作為可容易以高溫澆鑄或熱壓著所製造之銅箔層積板容易剝離載體箔。
但，為了實現在附有載體的銅箔之極薄銅層的厚度之更加減少，最近亦提案有經由濺鍍等之物理氣相沉積(PVD)法而形成極薄銅層者。例如，對於專利文獻4(國際公開第2017/150283號)係揭示有：依序具備載體，剝離層，反射防止層，極薄銅層之附有載體銅箔，而記載有以濺鍍而形成剝離層，反射防止層及極薄銅層者。另外，對於專利文獻5(國際公開第2017/150284號)係揭示有：依序具備載體，中間層(例如，密著金屬層及剝離補助層)，剝離層及極薄銅層之附有載體銅箔，而記載有以濺鍍而形成中間層，剝離層及極薄銅層者。在專利文獻3及4之任一中，剝離層係作為碳層者為佳。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2005-101137號公報 [專利文獻2]日本特開2007-307767號公報 [專利文獻3]日本特開2006-22406號公報 [專利文獻4]國際公開第2017/150283號 [專利文獻5]國際公開第2017/150284號
但，作為如專利文獻2，4及5所揭示之接合界面層乃至剝離層而含有碳層之附有載體之銅箔係雖在180℃程度之高溫中，剝離強度為低且為安定，但在以更高溫(例如，350℃)加熱之後中，有剝離強度過度增加之問題。另外，專利文獻3所揭示之附有載體之銅箔係明載有剝離強度對於鉻的附著量有大影響，而安定控制剝離強度之情況係為困難。如此，以往的附有載體之銅箔係在350℃以上之高溫而進行加熱時，無法保持安定之剝離性者。
另一方面，硬化溫度雖高，但如可作為絕緣層之材料而使用信賴性高之絕緣材料(例如，聚醯亞胺樹脂)，成為可作為要求更高信賴性，對於封裝之電路形成可能之附有載體之銅箔而擴大用途。隨之，在以350℃以上之高溫進行長時間加熱之後，亦保持安定之剝離性的附有載體之銅箔為佳。
本發明者係此次，得到由作為剝離層而設置金屬氧化物層及碳層於附有載體之銅箔的中間層與極薄銅層之間者，即使在以350℃以上之高溫進行長時間加熱之後，亦可提供可保持安定之剝離性的附有載體之極薄銅箔之見解。
隨之，本發明之目的係提供：在以350℃以上之高溫進行長時間加熱之後，亦可保持安定之剝離性的附有載體之極薄銅箔者。
如根據本發明之一形態，加以提供：具備 由玻璃或陶瓷所構成之載體， 和設置於前述載體上，由選自Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga及Mo所成的群之至少1種類的金屬所構成之中間層， 和設置於前述中間層上，含有碳層及金屬氧化物層，或含有金屬氧化物及碳的剝離層， 和設置於前述剝離層上之極薄銅層的附有載體之銅箔。
如根據本發明之其他一形態，加以提供：於前述載體上，對於前述中間層，前述碳層，前述金屬氧化物層存在之情況，係均經由物理氣相沉積(PVD)法而製作前述蝕刻停止層，及前述極薄銅層者為特徵之前述附有載體之銅箔的製造方法。
附有載體之銅箔 於圖1，模式性顯示本發明之附有載體之銅箔的一例。如圖1所示，本發明之附有載體之銅箔10係依序具備：載體12，和中間層14，和剝離層16，和極薄銅層18之構成。載體12係由玻璃或陶瓷所構成。中間層14係設置於載體12上，由選自Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga及Mo所成的群之至少1種類的金屬所構成的層。剝離層16係設置於中間層14上，含有金屬氧化物層16a及碳層16b(或者含有金屬氧化物及碳)的層。極薄銅層18係設置於剝離層16上，由銅所成的層。根據期望，本發明之附有載體之銅箔10係於剝離層16與極薄銅層18之間，更具有蝕刻停止層17亦可。另外，作為於載體12之兩面，呈成為上下對稱地依序具備上述之各種層所成之構成亦可。附有載體之銅箔10係具備上述之中間層14及剝離層16之情況以外係如採用公知的層構成即可，未特別加以限定。如此，於附有載體之銅箔10之中間層14與極薄銅層18之間，由作為剝離層16而設置金屬氧化物層16a及碳層16b者，在以350℃以上之高溫進行長時間(例如，2小時以上)加熱之後，成為亦可保持安定之剝離性者。隨之，本發明之附有載體之銅箔係在350℃以上加以使用者為佳。
如前述，以往之附有載體之銅箔係在以350℃以上之高溫進行加熱時，從剝離強度過度增加等之理由，並非可保持安定之剝離性者。經由加熱而剝離強度上升之結構係雖不明確，但推測如以下之情況。即，中間層14及極薄銅層18(存在之情況係蝕刻停止層17)係均由金屬所構成之故，當經由熱壓加工等而以高溫加熱於附有載體之銅箔10時，會產生來自此等層之金屬元素的擴散。此點，碳層16b係貢獻於載體的安定性之剝離之另一方面，可容許金屬元素的擴散。隨之，如專利文獻1，3及4，僅由碳層16b而構成剝離層16之情況，金屬元素係可穿過剝離層16而擴散於中間層14。其結果，認為在中間層14及極薄銅層18(存在之情況係蝕刻停止層17)間的範圍，產生有追加性之金屬-金屬結合，因此追加性之金屬-金屬結合引起，剝離強度則上升者。作為一例，於圖3顯示在僅由碳層16b而構成剝離層16之情況的附有載體之銅箔中，以各種溫度進行1小時加熱之後的剝離強度之圖表。如圖3所示，僅由碳層16b而構成剝離層16之附有載體之銅箔中，經由300℃以上之加熱，了解到剝離強度則加大上升，而在350℃中，成為無法剝離之情況。對此，本發明之附有載體之銅箔10係將剝離層16，不僅碳層16b(或者碳)，而由作為亦含有金屬氧化物層16a(或者金屬氧化物)之構成者，成為可抑制伴隨加熱之剝離強度之過度的上升，而可保持安定之剝離性者。即，金屬氧化物層16a則呈現優越之金屬元素的擴散防止效果之故，即使以350℃以上之高溫進行長時間加熱之情況，亦可抑制金屬元素穿過剝離層16而擴散至中間層14之情況。其結果，成為可有效果地抑制在中間層14及極薄銅層18(存在之情況係蝕刻停止層17)間的範圍中，金屬-金屬結合之追加性形成之情況。如此作為，本發明之附有載體之銅箔10係認為在以350℃以上之高溫進行長時間加熱之後，亦可保持安定之剝離性者。
載體12係由玻璃或陶瓷所構成。載體12之形態係亦可為薄片，薄膜及板之任一。另外，載體12係亦可為加以層積此等的薄片，薄膜及板等之構成。例如，載體12係可作為具有玻璃板，陶瓷板等之剛性的支持體而發揮機能者為佳。作為構成載體12之陶瓷之理想的例係可舉出：氧化鋁，鋯，氮化矽，氮化鋁，其他各種之精密陶瓷等。更理想係從在伴隨加熱之處理，附有載體之銅箔10之彎曲防止之觀點，熱膨脹係數(CTE)為不足25ppm/K(典型來說係1.0~23ppm/K)之材料，作為如此之材料的例係可舉出如上述之陶瓷及玻璃。另外，從操作性或晶片安裝時之平坦性保持的觀點，載體12係維氏硬度為100HV以上者為佳，而更理想為150~2500HV。作為滿足此等特性的材料，載體12係由玻璃加以構成者為特別理想，而例如為玻璃板或玻璃薄片等。作為載體12而使用玻璃之情況，輕量，且熱膨脹係數為低，絕緣性為高，剛直，表面為平坦之故，有著可將極薄銅層18之表面作為極度平滑等之利點。另外，載體12為玻璃之情況，有著在形成配線層之後，在進行畫像檢查時，對於鍍銅時之辨識性對照優越的點，在電子元件搭載時，具有有利的表面平坦性(共面性)的點，在印刷配線板製造工程中，在無電鍍銅或各種電鍍工程中具有耐藥品性的點，自附有載體之銅箔10剝離載體12時，可採用化學性分離法的點等之利點。作為構成載體12之玻璃的理想例係可舉出：石英玻璃，硼矽酸玻璃，無鹼玻璃，鈉鈣玻璃，矽酸鋁玻璃，及此等之組合，而更理想為無鹼玻璃，鈉鈣玻璃，及此等之組合，而特別理想為無鹼玻璃。無鹼玻璃係將二氧化矽，氧化鋁，氧化硼，及氧化鈣或氧化鋇等之鹼土金屬氧化物作為主成分，更含有硼酸，實質上未含有鹼金屬的玻璃者。此無鹼玻璃係在自0℃至350℃為止之廣溫度帶域中，熱膨脹係數則在3~5ppm/K之範圍為低而安定之故，有著可將在伴隨加熱之處理之玻璃的彎曲作為最小限度之利點。載體12的厚度係100~2000μm為佳，更理想為300~1800μm、又更理想為400~1100μm。當為如此範圍內之厚度時，確保對於操作未帶來障礙之適當的強度同時，可實現印刷配線板之薄型化，及在電子構件搭載時產生的彎曲之降低者。
載體12之中間層14側的表面係依據JIS B 0601-2001而加以測定，具有0.1~70nm之算術平均粗度Ra者為佳，更理想為0.5~60nm、又更理想為1.0~50nm、特別理想為1.5~40nm、最為理想為2.0~30nm。如此，算術平均粗度越小，在與極薄銅層18之剝離層16相反側的表面(極薄銅層18之外側表面)中可期望帶來低算術平均粗度Ra，經由此，在使用附有載體之銅箔10所製造之印刷配線板中，成為適合於線/空間(L/S)為13μm以下/13μm以下(例如，12μm/12μm~2μm/2μm)程度為止形成高度加以細微化之配線圖案者。
中間層14係介入存在於載體12與剝離層16之間，貢獻於載體12與剝離層16之密著性的確保的層。構成中間層14之金屬係Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga、Mo及此等之組合(以下，稱為金屬M)，理想係Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、Mo及此等之組成，更理想係Cu、Ti、Zr、Al、Cr、W、Ni、Mo及此等組成，又更理想係Cu、Ti、Al、Cr、Ni、Mo及此等組成，特別理想係Cu、Ti、Al、Ni及此等組成。此等中間層14係亦可為純金屬，或合金。構成中間層14之金屬係含有因原料成分或成膜工程等引起不可避不純物亦可。另外，雖未特別加以限制者，但在中間層14之成膜後暴露於大氣之情況，因此等而引起而混入的氧之存在係被容許。上述金屬之含有率的上限係未特別加以限定，而亦可為100原子%。中間層14係經由物理氣相沉積(PVD)法而加以形成的層者為佳，更理想係經由濺鍍而加以形成的層。中間層14係經由使用金屬標靶的射頻磁控濺鍍法而加以形成的層則在可提升膜厚分布的均一性的點而特別理想。中間層14之厚度係10~1000nm者為佳，更理想為30~800nm、又更理想為60~600nm、特別理想為100~400nm。此厚度係作為經由以透過型電子顯微鏡之能量分散型X線分光分析器(TEM-EDX)而分析層剖面而加以測定的值。
中間層14係亦可為1層構成，或2層以上之構成。中間層14為1層構成之情況，中間層14係由含有以Cu、Al、Ti、Ni或此等之組合(例如，合金或金屬間化合物)所構成之金屬的層所成者為佳，而更理想為Al、Ti、或此等之組合(例如，合金或金屬間化合物)，更理想係Al含有層或Ti含有層。另一方面，將與載體12之密著性未能說是充分高之金屬或合金，採用於中間層14之情況，係將中間層14作為2層構成者為佳。即，使由對於與載體12之密著性優越之金屬(例如，Ti)或合金所構成的層鄰接於載體12而設置，且使由對於與載體12之密著性差之金屬(例如，Cu)或合金所構成的層鄰接於剝離層16而設置者，可提升與載體12之密著性提升。隨之，作為中間層14之理想的2層構成的例，係可舉出由鄰接於載體12之Ti含有層，和鄰接於剝離層16之Cu含有層所成之層積構造。另外，當改變2層構成之各層的構成元素或厚度的平衡時，剝離強度亦改變之故，適宜調整各層之構成元素或厚度者為佳。然而，在本說明書中，對於「金屬M含有層」之範疇係在未損及載體的剝離性之範圍，作為亦含有包含金屬M以外的元素之合金者。隨之，中間層14係主要亦可稱為含有金屬M的層者。從上述的點，在中間層14之金屬M的含有率係50~100原子%者為佳，而更理想係60~100原子%、又更理想係70~100原子%、特別理想係80~100原子%、最理想係90~100原子%。
剝離層16係可進行載體12(此係伴隨中間層14)之剝離的層，而含有金屬氧化物層16a及碳層16b，或含有金屬氧化物及碳。由如此作為者，碳層16b則貢獻於載體12之安定性的剝離之同時，金屬氧化物層16a則可抑制伴隨來自中間層14及極薄銅層18(存在之情況係蝕刻停止層17)之金屬元素的加熱之擴散，作為結果，即使在以高溫(例如，350℃以上)加以加熱之後，成為亦可保持安定之剝離性者。層積金屬氧化物層16a及碳層16b的順序係並非特別加以限定，而金屬氧化物層16a則鄰接於中間層14，且碳層16b則設置於接近於極薄銅層18側(即，鄰接於蝕刻停止層17或極薄銅層18)者即可。或者，亦可為碳層16b則鄰接於中間層14，且金屬氧化物層16a則設置於接近於極薄銅層18側(即，鄰接於蝕刻停止層17或極薄銅層18)者。更且，剝離層16係金屬氧化物層16a及碳層16b之邊界則在未明確特定之混相(即，含有金屬氧化物及碳的層)之狀態而存在亦可。
金屬氧化物層16a係含有Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga、Mo及此等之組合所構成之金屬的氧化物(以下，稱為金屬氧化物MO)的層者為佳，更理想係可據出Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、Mo及此等之組成，更理想係Cu、Ti、Zr、Al、Cr、W、Ni、Mo及此等組成，特別理想係Cu、Ti、Al、Cr、Ni、Mo及此等組成，最更理想係Cu、Ti、Al、Ni及此等組成。金屬氧化物層16a係經由物理氣相沉積(PVD)法而加以形成的層者為佳，更理想係經由濺鍍而加以形成的層。金屬氧化物層16a係使用金屬標靶，經由在氧化性環境下，進行濺鍍之反應性濺鍍法而加以形成的層，但從經由成膜時間的調整而可容易地控制膜厚的點為特別理想。金屬氧化物層16a之厚度係100nm以下者為佳，更理想為60nm以下、又更理想為30nm以下、特別理想為10nm以下。此厚度係作為經由以透過型電子顯微鏡之能量分散型X線分光分析器(TEM-EDX)而分析層剖面而加以測定的值。
金屬氧化物層16a係含有構成中間層14之金屬的氧化物的層，但從製造之容易性的觀點為佳。作為中間層14及金屬氧化物層16a之組合的理想例係可舉出：(i)含有中間層14則鄰接於載體12之Ti含有層，和鄰接於剝離層16之Cu含有層，且金屬氧化物層16a則為氧化銅層者，(ii)中間層14則Ti含有層，且金屬氧化物層16a則氧化鈦層者，及(iii)中間層14則Al含有層，且金屬氧化物層16a則氧化鋁層者。如此形態之金屬氧化物層16a係不僅上述之反應性濺鍍法，而經由氧化處理中間層14之表面而亦可製作，而此氧化處理係根據經由將在真空中而進行之中間層14暴露於氧化性環境(例如，大氣)而進行之情況而進行亦可。然而，在本說明書中，對於「金屬氧化物MO含有層」之範疇係在未損及載體的剝離性之範圍，作為亦含有包含金屬氧化物MO以外的元素者。隨之，金屬氧化物層16a係主要亦可稱為含有金屬氧化物MO的層者。
碳層16b係主要為碳或碳化氫所成的層者為佳，更理想為係硬質碳膜之非晶質碳所成。此情況，碳層16b係經由XPS而加以測定之碳濃度為60原子%以上者為佳，更理想為70原子%以上、又更理想為80原子%以上、特別理想為85原子%以上。碳濃度之上限值係未特別加以限定，而亦可為100原子%，但現實為98原子%以下。碳層16b係可含有不可避不純物(例如，來自環境等之周圍環境的氧，碳，氫等)。另外，對於碳層16b係因蝕刻停止層17或極薄銅層18之成膜手法引起而會混入有金屬原子。碳係與載體12之相互擴散性及反應性為小，而即使受到由比較高溫(例如，180℃)之沖壓加工等，亦可防止在銅箔層與接合界面之間的經由加熱之金屬結合的形成，而維持載體12之剝離除去為容易之狀態者。碳層16b亦從經由物理氣相沉積(PVD)法而加以形成的層則抑制非晶質碳中之過度的不純物的點，前述之中間層14的成膜之連續生產性的點等而為理想，更理想係經由濺鍍而加以形成的層。碳層16b之厚度係1~20nm為佳，而更理想為1~10nm。此厚度係作為經由以透過型電子顯微鏡之能量分散型X線分光分析器(TEM-EDX)而分析層剖面而加以測定的值。
根據期望而設置於剝離層16與極薄銅層18之間的蝕刻停止層17係較極薄銅層18，不易經由銅急速蝕刻液而加以蝕刻的層。作為構成蝕刻停止層17之金屬的理想例係可舉出：Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、Mo及此等之組合，更理想係Ti、Zr、Al、Cr、W、Ni、Mo及此等之組合，又更理想為Ti、Al、Cr、Ni、Mo及此等之組合，特別理想係Ti、Mo及此等之組合。此等元素係因具有對於銅急速蝕刻液而言不會溶解之性質之故，其結果，可對於銅急速蝕刻液而言呈現優越之耐藥品性者。並且，本發明之附有載體之銅箔10係剝離層16則有效果地抑制來自蝕刻停止層17之金屬元素的擴散之故，即使在以350℃以上之高溫進行長時間加熱之後，蝕刻停止層17則未產生劣化而可保持所期望之耐藥品性。蝕刻停止層17係亦可為純金屬，或合金。構成蝕刻停止層17之金屬係含有因原料成分或成膜工程等引起不可避不純物亦可。另外，上述金屬之含有率的上限係未特別加以限定，而亦可為100原子%。蝕刻停止層17係經由物理氣相沉積(PVD)法而加以形成的層者為佳，更理想係經由濺鍍而加以形成的層。蝕刻停止層17之厚度係1~500nm者為佳，而更理想為10~400nm、又更理想為30~300nm、特別理想為50~200nm。
構成中間層14之金屬的標準電極電位係構成蝕刻停止層17之金屬的標準電極電位以上者為佳。換言之，構成蝕刻停止層17之金屬的離子化傾向則與構成中間層14之金屬的離子化傾向相同，或較此為高者為佳。由如此作為，可更一層提升在以350℃以上之高溫進行長時間加熱之後的附有載體之銅箔10的剝離性者。即，由作為上述形態者，來自蝕刻停止層17之金屬元素則擴散於與金屬氧化物層16a之接合界面時，促進此金屬元素的氧化，而積極性地成為金屬氧化物。其結果，成為更加以抑制在中間層14及蝕刻停止層17間的範圍之金屬-金屬結合之追加性的形成者，而可更一層抑制伴隨加熱之剝離強度的過度上升。
極薄銅層18係由銅加以構成的層。構成極薄銅層18之銅係含有因原料成分或成膜工程等引起不可避免不純物亦可。極薄銅層18係可由任何方法而加以製造者，例如，經由無電解鍍銅法及電解鍍銅法等之濕式成膜法，濺鍍及真空蒸鍍等之物理氣相沉積(PVD)法，化學氣相成膜，或此等之組合而形成之銅箔即可。特別理想之極薄銅層係從容易對應於經由極薄化之微距化的觀點，經由濺鍍法或真空蒸鍍等之物理氣相沉積(PVD)法而加以形成的銅層，而最為理想係經由濺鍍法而加以製造之銅層。另外，極薄銅層18係無粗化的銅層者為佳，但只要對於印刷配線板製造時之配線圖案形成未帶來障礙，而經由預備粗化或軟蝕刻處理或洗淨處理，氧化還原處理而產生有二次性的粗化者亦可。極薄銅層18之厚度係未特別加以限定，但對於為了對應於如上述之微距化，係10~1000nm為佳，更理想為20~900nm、又更理想為30~700nm、特別理想為50~600nm、又特別理想為70~500nm、最理想為100~400nm。如此範圍內之厚度的極薄銅層係經由濺鍍法而加以製造者則在成膜厚度的面內均一性，或以薄片狀或滾筒狀之生產性的觀點而為理想。
與極薄銅層18之剝離層16相反側的表面(極薄銅層18之外側表面)則依據JIS B 0601-2001而加以測定，具有0.1~100nm之算術平均粗度Ra者為佳，更理想為2.0~40nm、又更理想為3.0~35nm、特別理想為4.0~30nm、最為理想為5.0~15nm。如此，算術平均粗度越小，在使用附有載體之銅箔10而加以製造之印刷配線板中，成為適合線/空間(L/S)則至13μm以下/13μm以下(例如，12μm/12μm~2μm/2μm)程度為止，形成高度加以細微化之配線圖案之形成者。
中間層14，金屬氧化物層16a，碳層16b，蝕刻停止層17(存在之情況)及極薄銅層18係均為物理氣相沉積(PVD)膜、即經由物理氣相沉積(PVD)法而加以形成的膜者為佳，更理想係濺鍍膜，即經由濺鍍法而加以形成的膜。
附有載體之銅箔的製造方法 經由本發明之附有載體之銅箔10係準備上述之載體12，於載體12上，可經由形成中間層14，剝離層16(即，以順序不同，金屬氧化物層16a及碳層16b)，根據期望而形成蝕刻停止層17及極薄銅層18之時而製造。中間層14，剝離層16，蝕刻停止層17(存在之情況)及極薄銅層18之各層的形成係從容易對應經由極薄化之微距化的觀點，經由物理氣相沉積(PVD)法而加以進行者為佳。作為物理氣相沉積(PVD)法的例係可舉出：濺鍍法，真空蒸鍍法，及離子電鍍法等，但從可在0.05nm~5000nm之寬廣範圍進行膜厚控制的點，可遍布寬幅度乃至面積而確保膜厚均一性的點等，最理想為濺鍍法。特別是，由濺鍍法而形成中間層14，剝離層16，蝕刻停止層17(存在之情況)及極薄銅層18之所有的層者，製造效率則變特別高。經由物理氣相沉積(PVD)法的成膜係如使用公知的氣相成膜裝置而依照公知的條件進行即可，未特別加以限定。例如，採用濺鍍法之情況，濺鍍方式係為射頻磁控濺鍍，2極濺鍍法，對向標靶濺鍍法等公知之種種方法即可，但射頻磁控濺鍍則在成膜速度為快，生產性高的點而為理想。濺鍍係亦可由DC(直流)及RF(高頻率)之任一的電源而進行。另外，標靶形狀亦可使用廣為人知之板型標靶，但從標靶使用效率的觀點，使用圓筒型標靶者為佳。以下，對於經由中間層14，剝離層16(即，以順序不同，金屬氧化物層16a及碳層16b)，蝕刻停止層17(存在之情況)及極薄銅層18之各層的物理氣相沉積(PVD)法(理想係濺鍍法)之成膜加以說明。
經由中間層14之物理氣相沉積(PVD)法(理想係濺鍍法)之成膜係使用以選自Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga及Mo所成的群之至少1種的金屬所構成之標靶，在非氧化性環境下經由射頻磁控濺鍍而進行者則在可提升膜厚分布均一性的點而為理想。標靶的純度係99.9%以上為佳。作為使用濺鍍的氣體係使用氬氣等之非活性氣體者為佳。氬氣的流量係如因應濺鍍處理室尺寸及成膜條件而作適宜決定即可，未特別加以限定。另外，從未有異常放電等之稼動不佳，而連續性成膜之觀點，成膜時之壓力係以0.1~20Pa之範圍進行者為佳。此壓力範圍係因應裝置構造，容量，真空泵的排氣容量，成膜電源的額定容量等，如由調整成膜電力，氬氣的流量者而進行設定即可。另外，濺鍍電力係考慮成膜之膜厚均一性，生產性等，而如在標靶之每單位面積0.05~10.0W/cm2 之範圍內，作適宜設定即可。
經由金屬氧化物層16a之物理氣相沉積(PVD)法(理想係濺鍍法)之成膜係使用以選自Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga及Mo所成的群之至少1種的金屬所構成之標靶，在氧化性環境下經由反應性濺鍍法而進行者則在可容易地控制膜厚的點而為理想。標靶的純度係99.9%以上為佳。作為使用於濺鍍的氣體係使用非活性氣體(例如，氬氣)及氧化性氣體(例如，氧氣)之混合氣體者為佳。非活性氣體及氧化性氣體的流量係如因應濺鍍處理室尺寸及成膜條件而作適宜決定即可，未特別加以限定。另外，從未有異常放電等之稼動不佳，而連續性成膜之觀點，成膜時之壓力係以0.1~1.0Pa之範圍進行者為佳。此壓力範圍係因應裝置構造，容量，真空泵的排氣容量，成膜電源的額定容量等，如由調整成膜電力，非活性氣體及氧化性氣體的流量者而進行設定即可。另外，濺鍍電力係考慮成膜之膜厚均一性，生產性等，而如在標靶之每單位面積0.05~15.0W/cm2 之範圍內，作適宜設定即可。
經由碳層16b之物理氣相沉積(PVD)法(理想係濺鍍法)之成膜係使用碳標靶而在氬等之非活性環境下加以進行者為佳。碳標靶係由石墨所構成者為佳，但可含有不可避不純物(例如，來自環境等之周圍環境的氧或碳)。碳標靶之純度係99.99%以上為佳，更理想為99.999%以上。另外，從未有異常放電等之稼動不佳，而連續性成膜之觀點，成膜時之壓力係以0.1~2.0Pa之範圍進行者為佳。此壓力範圍係因應裝置構造，容量，真空泵的排氣容量，成膜電源的額定容量等，如由調整成膜電力，氬氣的流量者而進行設定即可。另外，濺鍍電力係考慮成膜之膜厚均一性，生產性等，而如在標靶之每單位面積0.05~10.0W/cm2 之範圍內，作適宜設定即可。
經由蝕刻停止層17之物理氣相沉積(PVD)法(理想係濺鍍法)之成膜係使用以選自Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni及Mo所成的群之至少1種的金屬所構成之標靶，經由射頻磁控濺鍍法而進行者為理想。標靶的純度係99.9%以上為佳。特別是，經由蝕刻停止層17之射頻磁控濺鍍法的成膜係在氬氣等之非活性氣體環境下，壓力0.1~20Pa加以進行者為佳。濺鍍壓力係更理想為0.2~15Pa、又更理想為0.3~10Pa。然而，上述壓力範圍之控制係如因應裝置構造，容量，真空泵的排氣容量，成膜電源的額定容量等，經由調整成膜電力，氬氣的流量者而進行設定即可。氬氣的流量係如因應濺鍍處理室尺寸及成膜條件而作適宜決定即可，未特別加以限定。另外，濺鍍電力係考慮成膜之膜厚均一性，生產性等，而如在標靶之每單位面積1.0~15.0W/cm2 之範圍內，作適宜設定即可。另外，在製膜時將載體溫度保持為一定者則在容易得到安定之膜特性(例如，膜阻抗或結晶尺寸)的點而為理想。成膜時之載體溫度係在25~300℃之範圍內進行調整者為佳，更理想為40~200℃、又更理想為50~150℃之範圍內。
經由極薄銅層18之物理氣相沉積(PVD)法(理想係濺鍍法)之成膜係使用銅標靶而在氬等之非活性環境下加以進行者為佳。銅標靶係由金屬銅所構成者為佳，但可含有不可避不純物。銅標靶之純度係99.9%以上為佳，更理想為99.99%以上，又更理想為99.999%以上。為了避免極薄銅層18之氣相成膜時之溫度上升，在濺鍍時，設置平台之冷卻機構亦可。另外，從未有異常放電等之稼動不佳，而安定性地成膜之觀點，成膜時之壓力係以0.1~2.0Pa之範圍進行者為佳。此壓力範圍係因應裝置構造，容量，真空泵的排氣容量，成膜電源的額定容量等，如由調整成膜電力，氬氣的流量者而進行設定即可。另外，濺鍍電力係考慮成膜之膜厚均一性，生產性等，而如在標靶之每單位面積0.05~10.0W/cm2 之範圍內，作適宜設定即可。 [實施例]
經由以下的例，更具體地加以說明本發明。
例1 如圖1所示，於作為載體12之玻璃薄片上，依序將中間層14(Ti含有層及Cu含有層)，金屬氧化物層16a，碳層16b，蝕刻停止層17，及極薄銅層18進行成膜而製作附有載體之銅箔10。具體的步驟係如以下。
(1)載體之準備 準備厚度1.1mm之玻璃薄片(材質：鈉鈣玻璃，算術平均粗度Ra：0.6nm，Central Glass股份有限公司製)。
(2) Ti含有層的形成 於載體12之表面，作為Ti含有層，由以下的裝置及條件，經由濺鍍而形成厚度100nm之鈦層。 - 裝置：枚葉式射頻磁控濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之Ti標靶(純度99.999%) - 到達真空度：不足1×10-4 Pa - 載氣：Ar(流量：100sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：1000W(3.1W/cm2 ) ‐ 成膜時溫度：40℃
(3) Cu含有層的形成 於Ti含有層上，作為Cu含有層，由以下的裝置及條件，經由濺鍍而形成厚度100nm之銅層。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之銅標靶(純度99.98%) - 到達真空度：不足1×10-4 Pa - 氣體：氬氣(流量：100sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：1000W(6.2W/cm2 ) ‐ 成膜時溫度：40℃
(4) 金屬氧化物層的形成 自真空中取出形成有Ti含有層及Cu含有層的試料，再由進行1分鐘大氣暴露者，進行Cu含有層之表面氧化處理(自然氧化)。經由此表面氧化處理，作為金屬氧化物層16a而形成氧化銅層。如根據至目前為止之經驗，氧化銅層的厚度係推測為約0.5~1.0nm。
(5) 碳層的形成 於金屬氧化物層16a上，作為碳層16b，由以下的裝置及條件，經由濺鍍而形成厚度6nm之非晶質碳層。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之碳標靶(純度99.999 %) - 到達真空度：不足1×10-4 Pa - 載氣：Ar(流量：100sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：250W(0.7W/cm2 ) ‐ 成膜時溫度：40℃
(6) 蝕刻停止層之形成 於碳層16b之表面，作為蝕刻停止層17，由以下的裝置及條件，經由濺鍍而形成厚度100nm之鈦層。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之鈦標靶(純度99.999 %) - 載氣：Ar(流量：100sccm) - 到達真空度：不足1×10-4 Pa - 濺鍍壓：0.35Pa - 濺鍍電力：1000W(3.1W/cm2 )
(7) 極銅薄層的形成 於蝕刻停止層17上，由以下之裝置及條件，經由濺鍍而形成膜厚300nm之極薄銅層18而得到附有載體之銅箔10。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之銅標靶(純度99.98%) - 到達真空度：不足1×10-4 Pa - 載氣：Ar(流量：100sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：1000W(3.1W/cm2 ) ‐ 成膜時溫度：40℃
例2 作為金屬氧化物層16a，取代進行經由大氣暴露之Cu含有層的表面氧化處理，將氧化銅層，如以下作為，經由反應性濺鍍而形成之情況以外，係與例1同樣作為而進行附有載體之銅箔的製作。
(氧化銅層之形成) 於Cu含有層的表面，由以下的裝置及條件，經由反應性濺鍍而形成目的之厚度約1nm之氧化銅層。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之銅標靶(純度99.98%) - 到達真空度：不足1×10-4 Pa - 氣體：氬氣(流量：90sccm)及氧氣(流量：10sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：100W(0.3W/cm2 ) ‐ 成膜時溫度：40℃
例3 將金屬氧化物層16a(氧化銅層)之目的厚度作成約2nm之情況以外，係與例2同樣作為而進行附有載體之銅箔的製作。
例4(比較) 未形成金屬氧化物層16a(即，未進行經由大氣暴露之Cu含有層的表面氧化處理)情況以外，係與例1同樣作為而進行附有載體之銅箔的製作。
例5 作為中間層14，取代Ti含有層及Cu含有層之2層，由如以下作為而形成Al含有層的單層情況，及作為金屬氧化物層16a，取代氧化銅層，如以下作為而形成氧化鋁層情況以外，係與例1同樣作為而進行附有載體之銅箔的製作。
(Al含有層之形成) 於載體12之表面，作為Al含有層，由以下的裝置及條件，經由濺鍍而形成厚度200nm之鋁層。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之Al標靶(純度99.9%以上) - 到達真空度：不足1×10-4 Pa - 載氣：Ar(流量：100sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：100W ‐ 成膜時溫度：40℃
(氧化鋁層之形成) 自真空中取出形成有Al含有層的試料，再由進行1分鐘大氣暴露者，進行Al含有層之表面氧化處理(自然氧化)。經由此表面氧化處理，作為金屬氧化物層16a而形成氧化鋁層。
例6 作為金屬氧化物層16a，取代進行經由大氣暴露之Al含有層的表面氧化處理，將氧化鋁層，如以下作為，經由反應性濺鍍而形成之情況以外，係與例5同樣作為而進行附有載體之銅箔的製作。
(氧化鋁層之形成) 於Al含有層的表面，作為金屬氧化物層16a，由以下的裝置及條件，經由反應性濺鍍而形成目的之厚度約1nm之氧化鋁層。 - 裝置：枚葉式DC濺鍍裝置(Canon Tokki股份有限公司製，MLS464) - 標靶：直徑8英吋(203.2mm)之Al標靶(純度99.99%) - 到達真空度：不足1×10-4 Pa - 氣體：氬氣(流量：90sccm)及氧氣(流量：10sccm) - 濺鍍壓：0.35Pa - 濺鍍電力：100W ‐ 成膜時溫度：40℃
例7 將金屬氧化物層16a(氧化鋁層)之目的厚度作成約2nm之情況以外，係與例6同樣作為而進行附有載體之銅箔的製作。
例8(比較) 作為金屬氧化物層16a而未形成氧化鋁層(即，未進行經由大氣暴露之Al含有層的表面氧化處理)情況以外，係與例5同樣作為而進行附有載體之銅箔的製作。
評估 對於例1~8之附有載體之銅箔，如以下所示，進行各種評估。評估結果係如表1所示。另外，對於表1係亦合併顯示中間層14及剝離層16之組成，以及金屬氧化物層16a之形成條件。
＜評估1：剝離層之半定量分析＞ 對於例3及4，依據以下的測定條件及解析條件，經由XPS而進行所製作之附有載體之銅箔的深度方向元素分析。此分析係將附有載體之銅箔，自極薄銅層表面朝向深度方向，由以下的條件，經由Ar離子蝕刻而深入同時進行。
(Ar離子蝕刻條件) - 加速電壓：500V - 蝕刻區域：2mm×2mm - 蝕刻速度：以SiO2 換算，1.4nm/min
(測定條件) - 裝置：X射線光電子能譜裝置(ULVAC･PHI股份有限公司製，Quantum2000) - 激發X射線：單色化Al-Kα線(1486.6eV) - 輸出：100W - 加速電壓：15kV - X射線照射口徑：直徑100μm - 測定面積：直徑100μm×1mm - 通道能量：23.5eV - 能量間距：0.1eV - 中和槍：有 - 測定元素及軌道：(sweep數：Ratio：Cycle數) O 1s：(5：6：1) Cu 2p3：(2：6：1) C 1s：(3：6：1) Ti 2p：(2：6：1) Si 2p：(1：6：1)
(解析條件) 使用資料解析軟體(ULVAC･PHI股份有限公司製，multi‐pack Ver9.4.0.7」)而進行XPS資料的解析。校平係以9點進行，後台模式係使用Shirley。然而，在半定量算出之各元素的後台範圍係如以下。 ‐ O 1s：528.0~540.0eV ‐ Cu 2p3：927.0~939.0eV ‐ C1 s：280.0~292.0eV ‐ Ti 2p：451.2~464.5eV ‐ Si 2p：峰值為檢出下限以下之故，作為0。
在剝離層16中，深度方向之氧半定量值的結果係如圖2所示。從圖2了解到，在進行經由反應性濺鍍的氧化銅層形成的例3中，比較於均未進行氧化銅層形成以及氧化處理之例4，在Cu含有層(中間層14之一部分)與剝離層16之界面的氧量則增加，確認到作為金屬氧化物層16a而形成氧化銅層之情況。在此，對於例4，作為平均而確認到約2Atom%的氧，但此係認為在碳層16b或蝕刻停止層17之成膜初期，檢出作為不純物而混入的氧者。然而，在圖2中的橫軸(深度)之數值係將附有載體之銅箔之極薄銅層表面作為分析開始位置(0nm)，將對於分析位置之載體側方向的深度，自SiO2 換算之蝕刻速度求取的值。
＜評估2：載體-極薄銅層之剝離性＞ 將進行作為在附有載體之銅箔10之熱過程的真空熱壓之後的剝離強度之測定，如以下進行。於附有載體之銅箔10之極薄銅層18側，施以厚度18μm之面板電解銅電鍍之後，作為熱過程，以350℃，2小時30kgf/cm2 之壓力進行沖壓。對於所得到之銅箔層積板而言，依據JIS C 6481-1996，測定剝離與極薄銅層18成為一體之電性鍍銅層時之剝離強度(gf/cm)。此時，測定寬度係作為50mm，測定長度係作為20mm。如此作為所得到之剝離強度(平均值)，由以下的基準而分等級。 評估A：未自然剝離，且剝離強度為50gf/cm以下 評估B：剝離強度為超過50gf/cm，150gf/cm以下 評估C：引起自然剝離，或超過150gf/cm(包含無法剝離)
然而，為了參考，i)未進行真空熱壓的情況(即，未加熱的情況)，ii)作為熱過程，以250℃，2小時30kgf/cm2 之壓力進行沖壓之情況，及iii)作為熱過程，以300℃，2小時30kgf/cm2 之壓力進行沖壓之情況的剝離強度(gf/cm)均以上述同樣的手法進行測定，此等結果均合併顯示於表1。
＜評估3：蝕刻停止層之耐藥品性＞ 以1.8mol/L之稀硫酸而處理各附有載體之銅箔10的極薄銅層18表面，進行表面之氧化膜的除去，之後，進行水洗及乾燥。之後，於極薄銅層18表面貼上感光性乾薄膜，呈賦予線/間距(L/S)=5μm/5μm之圖案地進行曝光及顯像。顯像係作為顯像液而使用1.0重量%碳酸鈉水溶液，以25℃，2分鐘間，經由噴淋方式而進行。經由以23℃，5分鐘間，噴淋壓力0.1MPa，浸漬如此作為所得到之附有配線層無芯支持體(於圖案形成之配線間露出極薄銅層18之狀態之構成)於含有硫酸-過氧化氫混合液的蝕刻液，而進行銅快速蝕刻。如此作為，除去露出於圖案形成之配線間的極薄銅層18。經由觀察快速蝕刻後之附有配線層無芯支持體而評估蝕刻停止層17之耐藥品性。由以下的基準而分級所得到之評估結果。 評估A：蝕刻停止層則未全溶解而殘留。 評估B：蝕刻停止層則僅溶解，有對於之後工程帶來不良影響之可能性。 評估C：蝕刻停止層則一部分溶解，有對於之後工程帶來不良影響之可能性為高。
Figure 02_image001
10‧‧‧附有載體之銅箔 12‧‧‧載體 14‧‧‧中間層 16‧‧‧剝離層 18‧‧‧極薄銅層 16a‧‧‧金屬氧化物層 16b‧‧‧碳層 17‧‧‧蝕刻停止層
圖1係顯示本發明之附有載體之銅箔的一形態之模式剖面圖。 圖2係顯示經由在例3及4所製作之剝離層之XPS的半定量分析之結果的圖。 圖3係顯示以往技術之附有載體之銅箔，在各種溫度進行1小時加熱之後的剝離強度之圖表。
10‧‧‧附有載體之銅箔
12‧‧‧載體
14‧‧‧中間層
16‧‧‧剝離層
18‧‧‧極薄銅層
16a‧‧‧金屬氧化物層
16b‧‧‧碳層
17‧‧‧蝕刻停止層

Claims (15)

  1. 一種附有載體之銅箔，其特徵為具備：載體，由玻璃或陶瓷所構成，中間層，係設置於前述載體上，由選自Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga及Mo所成的群之至少1種類的金屬所構成；剝離層，係設置於前述中間層上，含有包含選自Cu、Al、Nb、Zr、Ta、Ag、In、Sn、及Ga所成的群之至少1種的金屬之氧化物之金屬氧化物層及碳層；及極薄銅層，係設置於前述剝離層上者。
  2. 如申請專利範圍第1項記載之附有載體之銅箔，其中，於前述剝離層與前述極薄銅層之間，更具備由選自Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni及Mo所成的群之至少1種的金屬所構成之蝕刻停止層。
  3. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述金屬氧化物層鄰接於前述中間層，且前述碳層設置於接近於前述極薄銅層側。
  4. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述碳層則鄰接於前述中間層，且前述金屬氧化物層則設置於接近於前述極薄銅層側。
  5. 如申請專利範圍第2項記載之附有載體之銅箔，其中，構成前述中間層之金屬的標準電極電位則為構成前述蝕刻停止層之金屬的標準電極電位以上。
  6. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述中間層係由鄰接於前述載體之Ti含有層，和鄰接於前述剝離層之Cu含有層所成之2層所構成，或由含有選自Al、Ti及Ni所成的群之至少1種金屬的層所成之1層所構成。
  7. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述中間層之厚度則為10~1000nm。
  8. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述中間層包含鄰接於前述載體的Ti含有層，和鄰接於前述剝離層之Cu含有層，且前述金屬氧化物層為氧化銅層；或前述中間層為Ti含有層，且前述金屬氧化物層為氧化鈦層；或前述中間層為Al含有層，且前述金屬氧化物層為氧化鋁層。
  9. 如申請專利範圍第1項或第2項記載之附有載體之銅 箔，其中，前述金屬氧化物層之厚度則為100nm以下。
  10. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述碳層之厚度則為1~20nm。
  11. 如申請專利範圍第2項記載之附有載體之銅箔，其中，前述蝕刻停止層之厚度為1~500nm。
  12. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述極薄銅層之厚度則為10~1000nm。
  13. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述中間層，前述碳層，前述金屬氧化物層，前述蝕刻停止層(如果存在之時)，及前述極薄銅層係均為物理氣相沉積(PVD)膜。
  14. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，前述附有載體之銅箔係在350℃以上使用。
  15. 如申請專利範圍第1項或第2項記載之附有載體之銅箔，其中，於前述載體上，前述中間層，前述碳層，前述金屬氧化物層，前述蝕刻停止層(如果存在之時)及前述極薄銅層，係均經由物理氣相沉積(PVD)法加以製作製造。
TW107144664A 2017-12-27 2018-12-12 附有載體之銅箔 TWI724351B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-251237 2017-12-27
JP2017251237 2017-12-27

Publications (2)

Publication Number Publication Date
TW201934781A TW201934781A (zh) 2019-09-01
TWI724351B true TWI724351B (zh) 2021-04-11

Family

ID=67067183

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107144664A TWI724351B (zh) 2017-12-27 2018-12-12 附有載體之銅箔

Country Status (6)

Country Link
US (1) US11765840B2 (zh)
JP (2) JP7201621B2 (zh)
KR (2) KR102613885B1 (zh)
CN (2) CN111278644B (zh)
TW (1) TWI724351B (zh)
WO (1) WO2019131000A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220090558A (ko) 2020-02-04 2022-06-29 미쓰이금속광업주식회사 캐리어 구비 금속박
CN114196920B (zh) * 2021-12-22 2022-10-21 安徽铜冠铜箔集团股份有限公司 一种铜箔制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017150283A1 (ja) * 2016-02-29 2017-09-08 三井金属鉱業株式会社 キャリア付銅箔及びその製造方法、並びに配線層付コアレス支持体及びプリント配線板の製造方法
TW201742225A (zh) * 2016-02-29 2017-12-01 三井金屬鑛業股份有限公司 附載體之銅箔、以及附配線層之無芯支撐體及印刷配線板之製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026059B2 (en) 2000-09-22 2006-04-11 Circuit Foil Japan Co., Ltd. Copper foil for high-density ultrafine printed wiring boad
JP4273895B2 (ja) 2003-09-24 2009-06-03 日立化成工業株式会社 半導体素子搭載用パッケージ基板の製造方法
JP2006130724A (ja) * 2004-11-04 2006-05-25 Murata Mfg Co Ltd セラミックグリーンシート用キャリアフィルムおよびそれを用いたセラミックグリーンシートの加工方法、電子部品の製造方法
JP4754402B2 (ja) 2006-05-17 2011-08-24 三井金属鉱業株式会社 キャリア箔付銅箔、キャリア箔付銅箔の製造方法、キャリア箔付表面処理銅箔及びそのキャリア箔付表面処理銅箔を用いた銅張積層板
TW200804626A (en) 2006-05-19 2008-01-16 Mitsui Mining & Smelting Co Copper foil provided with carrier sheet, method for fabricating copper foil provided with carrier sheet, surface-treated copper foil provided with carrier sheet, and copper-clad laminate using the surface-treated copper foil provided with carrier she
US7977798B2 (en) * 2007-07-26 2011-07-12 Infineon Technologies Ag Integrated circuit having a semiconductor substrate with a barrier layer
KR101063454B1 (ko) * 2008-12-08 2011-09-08 삼성전기주식회사 인쇄회로기판 제조 방법
JP5925981B1 (ja) * 2014-09-19 2016-05-25 三井金属鉱業株式会社 表面処理銅箔及びその製造方法、プリント配線板用銅張積層板、並びにプリント配線板
KR102138676B1 (ko) 2015-04-28 2020-07-28 미쓰이금속광업주식회사 표면 처리 구리박 및 그 제조 방법, 프린트 배선판용 동장 적층판, 및 프린트 배선판
WO2017015084A1 (en) 2015-07-17 2017-01-26 Corning Optical Communications LLC Systems and methods for traceable cables

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017150283A1 (ja) * 2016-02-29 2017-09-08 三井金属鉱業株式会社 キャリア付銅箔及びその製造方法、並びに配線層付コアレス支持体及びプリント配線板の製造方法
TW201742225A (zh) * 2016-02-29 2017-12-01 三井金屬鑛業股份有限公司 附載體之銅箔、以及附配線層之無芯支撐體及印刷配線板之製造方法

Also Published As

Publication number Publication date
JP2023033313A (ja) 2023-03-10
TW201934781A (zh) 2019-09-01
KR20230172617A (ko) 2023-12-22
CN111278644A (zh) 2020-06-12
CN116583006A (zh) 2023-08-11
US20210059057A1 (en) 2021-02-25
KR20200102987A (ko) 2020-09-01
CN111278644B (zh) 2023-05-12
WO2019131000A1 (ja) 2019-07-04
JP7201621B2 (ja) 2023-01-10
JP7412523B2 (ja) 2024-01-12
US11765840B2 (en) 2023-09-19
JPWO2019131000A1 (ja) 2021-01-21
KR102613885B1 (ko) 2023-12-15

Similar Documents

Publication Publication Date Title
CN108699673B (zh) 带载体的铜箔、以及带布线层的无芯支撑体和印刷电路板的制造方法
CN108701656B (zh) 带载体的铜箔和其制造方法、以及带布线层的无芯支撑体和印刷电路板的制造方法
JP7412523B2 (ja) キャリア付銅箔
TWI682694B (zh) 超薄銅箔及帶載體超薄銅箔、以及印刷配線板的製造方法
JP7336559B2 (ja) 積層体
TWI716837B (zh) 附玻璃載體銅箔及其製造方法
TW202027979A (zh) 層積體
JP6466235B2 (ja) キャリア付銅箔、キャリア付銅張積層板、及びプリント配線板の製造方法
US20210274650A1 (en) Multilayer body
WO2021157373A1 (ja) キャリア付金属箔
TW202333310A (zh) 附載體金屬箔以及其使用方法及製造方法