CN116583006A - 带载体的铜箔 - Google Patents

带载体的铜箔 Download PDF

Info

Publication number
CN116583006A
CN116583006A CN202310435041.2A CN202310435041A CN116583006A CN 116583006 A CN116583006 A CN 116583006A CN 202310435041 A CN202310435041 A CN 202310435041A CN 116583006 A CN116583006 A CN 116583006A
Authority
CN
China
Prior art keywords
layer
carrier
copper foil
copper
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310435041.2A
Other languages
English (en)
Inventor
石井林太郎
柳井威范
松浦宜范
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Publication of CN116583006A publication Critical patent/CN116583006A/zh
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/085—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/341—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one carbide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/146—By vapour deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/12—Copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2313/00—Elements other than metals
    • B32B2313/04—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0147—Carriers and holders
    • H05K2203/016—Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/088—Using a vapour or mist, e.g. cleaning using water vapor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12188—All metal or with adjacent metals having marginal feature for indexing or weakened portion for severing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12229—Intermediate article [e.g., blank, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12451—Macroscopically anomalous interface between layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12625—Free carbon containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12882—Cu-base component alternative to Ag-, Au-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/12917—Next to Fe-base component
    • Y10T428/12924—Fe-base has 0.01-1.7% carbon [i.e., steel]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明涉及带载体的铜箔。提供即使在350℃以上的高温下长时间加热后，也能保持稳定的剥离性的带载体的极薄铜箔。该带载体的极薄铜箔具备：载体，其由玻璃或陶瓷构成；中间层，其设置于载体上，由选自由Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga和Mo组成的组中的至少1种金属构成；剥离层，其设置于中间层上，包含碳层和金属氧化物层或者包含金属氧化物和碳；以及，极薄铜层，其设置于剥离层上。

Description

带载体的铜箔
本申请是申请日为2018年12月3日，申请号为201880070531.4、发明名称为“带载体的铜箔”的申请的分案申请。
技术领域
本发明涉及带载体的铜箔。
背景技术
近年来，为了提高印刷电路板的安装密度从而进行小型化，开始广泛进行印刷电路板的多层化。这样的多层印刷电路板在大多数便携式电子设备中出于轻量化、小型化的目的而利用。而且，对该多层印刷电路板要求层间绝缘层的厚度进一步减小、及作为布线板进一步轻量化。
作为满足这样的要求的技术，采用使用了无芯积层法的多层印刷电路板的制造方法。无芯积层法是指在不使用所谓芯基板的情况下将绝缘层和布线层交替层叠(积层)来进行多层化的方法。无芯积层法中，为了容易地进行支撑体与多层印刷电路板的剥离，提出了使用带载体的铜箔的方案。例如，专利文献1(日本特开2005-101137号公报)中公开了如下的半导体元件搭载用封装基板的制造方法，其包括：在带载体的铜箔的载体面贴附绝缘树脂层而制成支撑体，通过光刻加工、图案电镀铜、抗蚀剂去除等工序在带载体的铜箔的极薄铜层侧形成第一布线导体，然后，将绝缘材料层叠并进行热压制加工等从而形成积层布线层，将带载体的支撑基板剥离，去除极薄铜层。
这样的多层印刷电路板的制造工序中，由于每次层叠绝缘材料时均会进行热压制加工，因此会在高温下长时间对带载体的铜箔进行加热。另外，该热压制加工的加热温度取决于要层叠的绝缘材料的固化温度，因此其温度根据绝缘材料的种类而异，范围宽至例如160～400℃。对于这点，已知热压制加工的加热温度越为高温，剥离强度越会上升，越会丧失剥离性。
提出了一些可应对加热所伴有的剥离强度的上升的带载体的铜箔。例如，专利文献2(日本特开2007-307767号公报)中公开了依次具备载体、作为接合界面层的碳层、及铜箔的带载体的铜箔，即使在超过180℃的高温下加热后，也能容易地实现载体箔与铜箔的剥离。另外，专利文献3(日本特开2006-22406号公报)中公开了在载体的表面依次层叠铬层等剥离层、镍层等扩散防止层、和电镀铜层而成的带载体的铜箔，其能够容易地从通过高温进行流延或热压接而制造的覆铜层叠板将载体箔剥离。
另外，为了实现带载体的铜箔中的极薄铜层的厚度的进一步减小，最近还提出了通过溅射等物理气相沉积(PVD)法形成极薄铜层。例如，专利文献4(国际公开第2017/150283号)中公开了依次具备载体、剥离层、防反射层、极薄铜层的带载体的铜箔，记载了通过溅射形成剥离层、防反射层和极薄铜层。另外，专利文献5(国际公开第2017/150284号)中公开了具备载体、中间层(例如密合金属层和剥离辅助层)、剥离层和极薄铜层的带载体的铜箔，记载了通过溅射形成中间层、剥离层和极薄铜层。专利文献3和4中均优选剥离层为碳层。
现有技术文献
专利文献
专利文献1：日本特开2005-101137号公报
专利文献2：日本特开2007-307767号公报
专利文献3：日本特开2006-22406号公报
专利文献4：国际公开第2017/150283号
专利文献5：国际公开第2017/150284号
发明内容
但是，专利文献2、4和5中所公开那样的包含碳层作为接合界面层和/或剥离层的带载体的铜箔有如下问题：在180℃左右的高温下会以剥离强度低的水平稳定，但在进一步的高温(例如350℃)下加热后，剥离强度会过度增加。另外，明确教导了专利文献3中公开的带载体的铜箔的剥离强度大幅受铬的附着量的影响，难以稳定地控制剥离强度。这样，以往的带载体的铜箔在350℃以上的高温下加热时，不能保持稳定的剥离性。
另一方面，如果可以使用固化温度高但可靠性高的绝缘材料(例如聚酰亚胺树脂)作为绝缘层的材料，则能制成面向要求更高可靠性的封装体的可实现电路形成的带载体的铜箔而拓宽用途。因此，期望即使在350℃以上的高温下长时间加热后也保持稳定的剥离性的带载体的铜箔。
本发明人此次得到如下见解：通过在带载体的铜箔的中间层与极薄铜层之间设置金属氧化物层和碳层作为剥离层，能够提供即使在350℃以上的高温下长时间加热后也能保持稳定的剥离性的带载体的极薄铜箔。
因此，本发明的目的在于，提供即使在350℃以上的高温下长时间加热后也能保持稳定的剥离性的带载体的极薄铜箔。
根据本发明的一个方式，提供一种带载体的铜箔，其具备：
载体，其由玻璃或陶瓷构成；
中间层，其设置于前述载体上，由选自由Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga和Mo组成的组中的至少1种金属构成；
剥离层，其设置于前述中间层上，包含碳层和金属氧化物层或者包含金属氧化物和碳；以及，
极薄铜层，其设置于前述剥离层上。
根据本发明的另一方式，提供前述带载体的铜箔的制造方法，其特征在于，在前述载体上，将前述中间层、前述碳层、前述金属氧化物层、存在的情况下的前述蚀刻阻挡层、以及前述极薄铜层均通过物理气相沉积(PVD)法来制作。
附图说明
图1为示出本发明的带载体的铜箔的一个方式的截面示意图。
图2为示出例3和4中制作的剥离层的基于XPS的半定量分析的结果的图。
图3为示出现有技术的带载体的铜箔的、在各种温度下进行1小时加热后的剥离强度的图表。
具体实施方式
带载体的铜箔
本发明的带载体的铜箔的一例示意性地示于图1。如图1所示，本发明的带载体的铜箔10依次具备：载体12、中间层14、剥离层16、和极薄铜层18。载体12由玻璃或陶瓷构成。中间层14为设置于载体12上且由选自由Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga和Mo组成的组中的至少1种金属构成的层。剥离层16为设置于中间层14上的、包含金属氧化物层16a和碳层16b(或包含金属氧化物和碳)的层。极薄铜层18为设置于剥离层16上的由铜形成的层。根据期望，本发明的带载体的铜箔10可以在剥离层16与极薄铜层18之前进一步具有蚀刻阻挡层17。另外，也可以采用以与载体12的两面上下对称的方式依次具备上述各种层的构成。对于带载体的铜箔10，除了具备上述的中间层14和剥离层16以外，只要采用公知的层结构即可，没有特别限定。这样，通过在带载体的铜箔10的中间层14与极薄铜层18之间设置金属氧化物层16a和碳层16b作为剥离层16，即使在350℃以上的高温下进行长时间(例如2小时以上)加热后，也能保持稳定的剥离性。因此，本发明的带载体的铜箔优选在350℃以上使用。
如前所述，以往的带载体的铜箔由于在350℃以上的高温下加热时剥离强度会过度增加等理由而不能保持稳定的剥离性。对于剥离强度因加热而上升的机理并不确定，但推测为以下。即，中间层14和极薄铜层18(存在的情况下的蚀刻阻挡层17)均由金属构成，因此若通过热压制加工等在高温下对带载体的铜箔10进行加热，则会发生源自这些层的金属元素的扩散。对于这点，碳层16b一方面有助于载体的稳定的剥离，但另一方面可允许金属元素的扩散。因此，在如专利文献1、3和4那样仅由碳层16b构成剥离层16的情况下，金属元素会穿过剥离层16向中间层14扩散。其结果，可以认为，在中间层14和极薄铜层18(存在的情况下的蚀刻阻挡层17)间的区域会产生追加的金属-金属键，起因于该追加的金属-金属键，剥离强度会上升。作为一例，将仅由碳层16b构成剥离层16的情况下的带载体的铜箔的、在各种温度下进行1小时加热后的剥离强度的图表示于图3。如图3所示可知，对于仅由碳层16b构成可剥离层16的带载体的铜箔，通过300℃以上的加热，剥离强度大幅上升，在350℃下变为不可剥离。与此相对，本发明的带载体的铜箔10将剥离层16设为不仅包含碳层16b(或碳)、还包含金属氧化物层16a(或金属氧化物)的构成，从而能够抑制加热所伴有的剥离强度的过度上升，能够保持稳定的剥离性。即，金属氧化物层16a呈现优异的防止金属元素扩散的效果，因此即使在350℃以上的高温下长时间加热的情况下，也能够抑制金属元素穿过剥离层16向中间层14扩散。其结果，能有效地抑制中间层14和极薄铜层18(存在的情况下的蚀刻阻挡层17)间的区域中的金属-金属键的追加的形成。这样，可以认为本发明的带载体的铜箔10即使在350℃以上的高温下长时间加热后也能够保持稳定的剥离性。
载体12由玻璃或陶瓷构成。载体12的形态可以为片、薄膜和板中的任意者。另外，载体12也可以为这些片、薄膜和板等层叠而成的载体。例如，载体12优选为玻璃板、陶瓷板等可以作为具有刚性的支撑体而发挥作用的载体。作为构成载体12的陶瓷的优选的例子，可列举出氧化铝、氧化锆、氮化硅、氮化铝、其他各种精细陶瓷等。从防止带有加热的工艺中的带载体的铜箔10的翘曲的观点出发，更优选为热膨胀系数(CTE)不足25ppm/K(典型的为1.0～23ppm/K)的材料，作为这样的材料的例子，可列举出如上所述的陶瓷和玻璃。另外，从确保处理性、芯片安装时的平坦性的观点出发，载体12优选维氏硬度为100HV以上、更优选为150～2500HV。作为满足这些特性的材料，载体12特别优选由玻璃构成，例如为玻璃板、玻璃片等。使用玻璃作为载体12的情况下，由于轻量、热膨胀系数低、绝缘性高、刚性且表面平坦，因此有能够使极薄铜层18的表面极度平滑等优点。另外，在载体12为玻璃的情况下，有如下优点等：形成布线层后，进行图像检查时与铜镀层的可视性对比度优异；具有对电子元件搭载时有利的表面平坦性(共面性，coplanarity)；在印刷电路板制造工序中的除钻污、各种镀覆工序中具有耐化学试剂性；从带载体的铜箔10将载体12剥离时可以采用化学分离法。作为构成载体12的玻璃的优选的例子，可列举出石英玻璃、硼硅酸玻璃、无碱玻璃、钠钙玻璃、氨基硅酸盐玻璃、及它们的组合，更优选为无碱玻璃、钠钙玻璃、及它们的组合，特别优选为无碱玻璃。无碱玻璃为以二氧化硅、氧化铝、氧化硼、及氧化钙、氧化钡等碱土金属氧化物为主成分且还含有硼酸的、实质上不含有碱金属的玻璃。该无碱玻璃在0℃～350℃的宽的温度区域内热膨胀系数低至3～5ppm/K的范围，是稳定的，因此有能够使带有加热的工艺中的玻璃的翘曲为最小限的优点。载体12的厚度优选为100～2000μm、更优选为300～1800μm、进一步优选为400～1100μm。为这样的范围内的厚度时，能够确保不对处理带来障碍的适当的强度、并且实现印刷电路板的薄型化和电子部件搭载时产生的翘曲的减少。
载体12的中间层14侧的表面优选具有依据JIS B 0601-2001测定的0.1～70nm的轮廓算数平均偏差Ra，更优选为0.5～60nm、进一步优选为1.0～50nm、特别优选为1.5～40nm、最优选为2.0～30nm。这样轮廓算数平均偏差越小，极薄铜层18的与剥离层16处于相反侧的表面(极薄铜层18的外侧表面)越能够带来理想的低的轮廓算数平均偏差Ra，由此，在使用带载体的铜箔10制造的印刷电路板中，约适于形成高度微细化至线/间隔(L/S)为13μm以下/13μm以下(例如12μm/12μm～2μm/2μm)的程度的布线图案。
中间层14为夹设于载体12与剥离层16之间、有助于确保载体12与剥离层16的密合性的层。构成中间层14的金属为Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga、Mo及它们的组合(以下，称为金属M)，优选为Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、Mo及它们的组合，更优选为Cu、Ti、Zr、Al、Cr、W、Ni、Mo及它们的组合，进一步优选为Cu、Ti、Al、Cr、Ni、Mo及它们的组合，特别优选为Cu、Ti、Al、Ni及它们的组合。中间层14可以为纯金属，也可以为合金。构成中间层14的金属可以包含起因于原料成分、成膜工序等的不可避免的杂质。另外，虽然没有特别限制，但在中间层14的成膜后暴露于大气的情况下，允许存在因此而混入的氧。上述金属的含有率的上限没有特别限定，可以为100原子％。中间层14优选为通过物理气相沉积(PVD)法形成的层，更优选为通过溅射形成的层。从能够提高膜厚分布的均匀性的方面出发，中间层14为通使用了金属靶的磁控溅射法形成的层是特别优选的。中间层14的厚度优选为10～1000nm、更优选为30～800nm、进一步优选为60～600nm、特别优选为100～400nm。该厚度采用通过利用透射型电子显微镜的能量色散型X射线光谱仪(TEM-EDX)对层截面进行分析而测定的值。
中间层14可以为1层结构，也可以为2层以上的结构。中间层14为1层结构的情况下，中间层14优选由含有如下金属的层形成，所述金属由Cu、Al、Ti、Ni或它们的组合(例如合金、金属间化合物)构成，更优选为Al、Ti、或它们的组合(例如合金、金属间化合物)，进一步优选为含Al层或含Ti层。另一方面，在中间层14中采用不能说与载体12的密合性足够高的金属或合金的情况下，优选将中间层14设为2层结构。即，通过与载体12邻接地设置由与载体12的密合性优异的金属(例如Ti)或合金构成的层、并且与剥离层16邻接地设置由与载体12的密合性差的金属(例如Cu)或合金构成的层，能够提高与载体12的密合性。因此，作为中间层14优选的2层结构的例子，可列举出由与载体12邻接的含Ti层和与剥离层16邻接的含Cu层形成的层叠结构。另外，由于改变2层结构的各层的构成元素、厚度的平衡时剥离强度也会改变，因此优选适宜调整各层的构成元素、厚度。需要说明的是，本说明书中的“含金属M的层”的范畴在不损害载体的剥离性的范围内也包含含有除金属M以外的元素的合金。因此，中间层14也可以称为主要包含金属M的层。从上述的观点出发，中间层14中的金属M的含有率优选为50～100原子％、更优选为60～100原子％、进一步优选为70～100原子％、特别优选为80～100原子％、最优选为90～100原子％。
剥离层16为使载体12(其带有中间层14)的剥离成为可能的层，其包含金属氧化物层16a和碳层16b、或包含金属氧化物和碳。通过这样，碳层16b能够有助于载体12的稳定的剥离、并且金属氧化物层16a能够抑制源自中间层14和极薄铜层18(存在的情况下的蚀刻阻挡层17)的金属元素的伴随加热的扩散，结果即使在高温(例如350℃以上)下加热后，也能保持稳定的剥离性。金属氧化物层16a和碳层16b层叠的顺序没有特别限定，可以使金属氧化物层16a与中间层14邻接、并且将碳层16b设置于靠近极薄铜层18的一侧(即与蚀刻阻挡层17或极薄铜层18邻接)。或者，也可以使碳层16b与中间层14邻接、并且将金属氧化物层16a设置于靠近极薄铜层18的一侧(即与蚀刻阻挡层17或极薄铜层18邻接)。进而剥离层16可以以金属氧化物层16a和碳层16b的边界未明确界定的混相(即包含金属氧化物和碳的层)的状态存在。
金属氧化物层16a优选为包含由Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga、Mo及它们的组合构成的金属的氧化物(以下，称为金属氧化物MO)的层，可更优选列举出Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、Mo及它们的组合，进一步优选为Cu、Ti、Zr、Al、Cr、W、Ni、Mo及它们的组合，特别优选为Cu、Ti、Al、Cr、Ni、Mo及它们的组合，最优选为Cu、Ti、Al、Ni及它们的组合。金属氧化物层16a优选为通过物理气相沉积(PVD)法形成的层，更优选为通过溅射形成的层。从可通过成膜时间的调整来容易地控制膜厚的方面出发，金属氧化物层16a为通过使用金属靶在氧化性气氛下进行溅射的反应性溅射法形成的层是特别优选的。金属氧化物层16a的厚度优选为100nm以下、更优选为60nm以下、进一步优选为30nm以下、特别优选为10nm以下。该厚度采用通过利用透射型电子显微镜的能量色散型X射线光谱仪(TEM-EDX)对层截面进行分析而测定的值。
从制造的容易性的观点出发，金属氧化物层16a为包含用于构成中间层14的金属的氧化物的层是优选的。作为中间层14和金属氧化物层16a的组合的优选的例子，可列举出：(i)中间层14包含与载体12邻接的含Ti层和与剥离层16邻接的含Cu层，并且金属氧化物层16a为氧化铜层；(ii)中间层14为含Ti层，并且金属氧化物层16a为氧化钛层；以及，(iii)中间层14为含Al层、并且金属氧化物层16a为氧化铝层。这种方式的金属氧化物层16a不仅可以通过上述的反应性溅射法来制作，还可以通过对中间层14的表面进行氧化处理来制作，该氧化处理可以通过将在真空中形成的中间层14暴露于氧化性气氛(例如大气)来进行。需要说明的是，本说明书中“含金属氧化物MO的层”的范畴在不损害载体的剥离性的范围内还包含除金属氧化物MO以外的元素。因此，金属氧化物层16a也可以称为主要包含金属氧化物MO的层。
碳层16b优选为主要由碳或烃形成的层，进一步优选由属于硬质碳膜的无定形碳形成。该情况下，碳层16b通过XPS测定的碳浓度优选为60原子％以上、更优选为70原子％以上、进一步优选为80原子％以上、特别优选为85原子％以上。碳浓度的上限值没有特别限定，可以为100原子％，但98原子％以下是现实的。碳层16b可包含不可避免的杂质(例如源自气氛等周围环境的氧、碳、氢等)。另外，碳层16b中，可能因为蚀刻阻挡层17或极薄铜层18的成膜方法而混入金属原子。碳与载体12的相互扩散性及反应性小，即使受到较高温度(例如180℃)下的压制加工等，也能够防止铜箔层与接合界面之间的加热所引起的金属键的形成，从而维持载体12的剥离去除容易的状态。对于该碳层16b，从抑制无定形碳中的过度的杂质的方面、前述的中间层14的成膜的连续生产性的方面等出发，也优选为通过物理气相沉积(PVD)法形成的层，更优选为通过溅射形成的层。碳层16b的厚度优选为1～20nm、更优选为1～10nm。该厚度采用通过利用透射型电子显微镜的能量色散型X射线光谱仪(TEM-EDX)对层截面进行分析而测定的值。
根据期望设置在剥离层16与极薄铜层18之间的蚀刻阻挡层17为与极薄铜层18相比不易被铜闪蚀液蚀刻的层。作为构成蚀刻阻挡层17的金属优选的例子，可列举出Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、Mo及它们的组合，更优选为Ti、Zr、Al、Cr、W、Ni、Mo及它们的组合，进一步优选为Ti、Al、Cr、Ni、Mo及它们的组合，特别优选为Ti、Mo及它们的组合。这些元素具有在铜闪蚀液中不溶解的性质，其结果，能够对铜闪蚀液呈现出优异的耐化学试剂性。在此基础上，本发明的带载体的铜箔10由于剥离层16会有效地抑制源自蚀刻阻挡层17的金属元素的扩散，因此即使在350℃以上的高温下长时间加热后，也能够在蚀刻阻挡层17不劣化的情况下保持期望的耐化学试剂性。蚀刻阻挡层17可以为纯金属，也可以为合金。构成蚀刻阻挡层17的金属可以包含起因于原料成分、成膜工序等的不可避免的杂质。另外，上述金属的含有率的上限没有特别限定，可以为100原子％。蚀刻阻挡层17优选为通过物理气相沉积(PVD)法形成的层，更优选为通过溅射形成的层。蚀刻阻挡层17的厚度优选为1～500nm、更优选为10～400nm、进一步优选为30～300nm、特别优选为50～200nm。
构成中间层14的金属的标准电极电位优选大于等于构成蚀刻阻挡层17的金属的标准电极电位。换言之，优选构成蚀刻阻挡层17的金属的离子化倾向与构成中间层14的金属的离子化倾向相同、或比其高。通过这样，能够进一步提高在350℃以上的高温下长时间加热后的带载体的铜箔10的剥离性。即，通过采用上述方式，源自蚀刻阻挡层17的金属元素向其与金属氧化物层16a的接合界面扩散时，会促进该金属元素的氧化，积极地成为金属氧化物。其结果，中间层14及蚀刻阻挡层17间的区域中的金属-金属键的追加形成受到进一步抑制，能够进一步抑制加热所伴有的剥离强度的过度上升。
极薄铜层18为由铜构成的层。构成极薄铜层18的铜可以包含起因于原料成分、成膜工序等的不可避免的杂质。极薄铜层18可以通过任意方法来制造，例如可以为通过化学镀铜法和电镀铜法等湿式成膜法、溅射和真空蒸镀等物理气相沉积(PVD)法、化学气相成膜、或它们的组合形成的铜箔。从容易应对由极薄化带来的细间距化的观点出发，特别优选的极薄铜层为通过溅射法、真空蒸镀等物理气相沉积(PVD)法形成的铜层，最优选为通过溅射法制造的铜层。另外，极薄铜层18优选为无粗糙化的铜层，但只要不对印刷电路板制造时的布线图案形成造成障碍，也可以为通过预备的粗糙化、软蚀刻处理、清洗处理、氧化还原处理而产生二次的粗糙化的铜层。极薄铜层18的厚度没有特别限定，但为了应对如上所述的细间距化，优选10～1000nm、更优选为20～900nm、进一步优选为30～700nm、特别优选为50～600nm、特别是更优选为70～500nm、最优选为100～400nm。从成膜厚度的面内均匀性、片状、卷状的生产率的观点出发，上述范围内的厚度的极薄铜层通过溅射法来制造是优选的。
极薄铜层18的与剥离层16处于相反侧的表面(极薄铜层18的外侧表面)优选具有依据JIS B 0601-2001测定的1.0～100nm的轮廓算数平均偏差Ra，更优选为2.0～40nm、进一步优选为3.0～35nm、特别优选为4.0～30nm、最优选为5.0～15nm。这样轮廓算数平均偏差越小，使用带载体的铜箔10制造的印刷电路板越适于形成高度微细化至线/间隔(L/S)为13μm以下/13μm以下(例如12μm/12μm～2μm/2μm)的程度的布线图案。
中间层14、金属氧化物层16a、碳层16b、蚀刻阻挡层17(存在的情况下)及极薄铜层18均优选为物理气相沉积(PVD)膜、即通过物理气相沉积(PVD)法形成的膜，更优选为溅射膜、即通过溅射法形成的膜。
带载体的铜箔的制造方法
本发明的带载体的铜箔10可以通过准备上述的载体12、并在载体12上形成中间层14、剥离层16(即顺序不同的金属氧化物层16a和碳层16b)、根据期望的蚀刻阻挡层17、及极薄铜层18来制造。对于中间层14、剥离层16、蚀刻阻挡层17(存在的情况下)及极薄铜层18的各层的形成，从容易应对极薄化所带来的细间距化的观点出发，优选通过物理气相沉积(PVD)法进行。作为物理气相沉积(PVD)法的例子，可列举出溅射法、真空蒸镀法和离子镀法，从能够在0.05nm～5000nm这样的宽的范围内进行膜厚控制的方面、能够遍及宽的范围和/或面积来确保膜厚均匀性的方面等出发，最优选为溅射法。特别是通过溅射法来形成中间层14、剥离层16、蚀刻阻挡层17(存在的情况下)及极薄铜层18的全部的层会使制造效率明显提高。对于基于物理气相沉积(PVD)法的成膜，只要使用公知的气相成膜装置并按照公知的条件进行即可，没有特别限定。例如，在采用溅射法的情况下，溅射方式可以为磁控溅射、2极溅射法、对向靶溅射法等公知的各种方法，而磁控溅射从成膜速度快、生产率高的方面出发是优选的。对于溅射，可以利用DC(直流)和RF(高频)中的任意电源进行。另外，对于靶形状，也可以使用广为人知的板型靶，但从靶使用效率的观点出发，理想的是使用圆筒形靶。以下，对中间层14、剥离层16(即顺序不同的金属氧化物层16a和碳层16b)、蚀刻阻挡层17(存在的情况下)及极薄铜层18各层的基于物理气相沉积(PVD)法(优选溅射法)的成膜进行说明。
对于中间层14的基于物理气相沉积(PVD)法(优选溅射法)的成膜，从能够提高膜厚分布均匀性的方面出发，优选使用由选自由Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga和Mo组成的组中的至少1种金属构成的靶，在非氧化性气氛下通过磁控溅射来进行。靶的纯度优选为99.9％以上。作为溅射中使用的气体，优选使用氩气等非活性气体。氩气的流量根据溅射室尺寸及成膜条件来适宜决定即可，没有特别限定。另外，从没有异常放电等运转不良、连续地进行成膜的观点出发，对于成膜时的压力，优选在0.1～20Pa的范围进行。该压力范围可以根据装置结构、容量、真空泵的排气容量、成膜电源的额定容量等通过对成膜电力、氩气的流量进行调整来设定。另外，对于溅射电力，可以考虑成膜的膜厚均匀性、生产率等，在靶的每单位面积为0.05～10.0W/cm2的范围内适宜设定。
对于金属氧化物层16a的基于物理气相沉积(PVD)法(优选溅射法)的成膜，从能容易地控制膜厚的方面出发，优选使用由选自由Cu、Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni、In、Sn、Zn、Ga和Mo组成的组中的至少1种金属构成的靶，在氧化性气氛下通过反应性溅射法来进行。靶的纯度优选为99.9％以上。作为溅射中使用的气体，优选使用非活性气体(例如氩气)和氧化性气体(例如氧气)的混合气体。非活性气体和氧化性气体的流量根据溅射室尺寸及成膜条件来适宜决定即可，没有特别限定。另外，从没有异常放电等运转不良、连续地进行成膜的观点出发，对于成膜时的压力，优选以0.1～1.0Pa的范围进行。该压力范围可以根据装置结构、容量、真空泵的排气容量、成膜电源的额定容量等通过对成膜电力、非活性气体和氧化性气体的流量进行调整来设定。另外，对于溅射电力，可以考虑成膜的膜厚均匀性、生产率等，在靶的每单位面积为0.05～15.0W/cm2的范围内适宜设定。
对于碳层16b的基于物理气相沉积(PVD)法(优选溅射法)的成膜，优选使用碳靶在氩等非活性气氛下进行。碳靶优选由石墨构成，可包含不可避免的杂质(例如源自气氛等周围环境的氧、碳)。碳靶的纯度优选为99.99％以上，更优选为99.999％以上。另外，从没有异常放电等运转不良、连续地进行成膜的观点出发，对于成膜时的压力，优选以0.1～2.0Pa的范围进行。该压力范围可以根据装置结构、容量、真空泵的排气容量、成膜电源的额定容量等通过对成膜电力、氩气的流量进行调整来设定。另外，对于溅射电力，可以考虑成膜的膜厚均匀性、生产率等考虑，在靶的每单位面积为0.05～10.0W/cm2的范围内适宜设定。
对于蚀刻阻挡层17的基于物理气相沉积(PVD)法(优选溅射法)的成膜，优选使用由选自由Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni和Mo组成的组中的至少1种金属构成的靶，通过磁控溅射法来进行。靶的纯度优选为99.9％以上。尤其是蚀刻阻挡层17的基于磁控溅射法的成膜优选在氩等非活性气体气氛下以压力0.1～20Pa进行。溅射压力更优选为0.2～15Pa、进一步优选为0.3～10Pa。需要说明的是，对于上述压力范围的控制，可以根据装置结构、容量、真空泵的排气容量、成膜电源的额定容量等通过调整成膜电力、氩气的流量来进行。氩气的流量根据溅射室尺寸及成膜条件来适宜决定即可，没有特别限定。另外，对于溅射电力，可以考虑成膜的膜厚均匀性、生产率等，在靶的每单位面积为1.0～15.0W/cm2的范围内适宜设定。另外，从容易得到稳定的膜特性(例如膜电阻、结晶尺寸)的方面来看，在制膜时将载体温度保持为恒定是优选的。对于成膜时的载体温度，优选在25～300℃的范围内进行调整，更优选为40～200℃、进一步优选为50～150℃的范围内。
对于极薄铜层18的基于物理气相沉积(PVD)法(优选溅射法)的成膜，优选使用铜靶在氩等非活性气氛下进行。铜靶优选由金属铜构成，但可包含不可避免的杂质。铜靶的纯度优选为99.9％以上、更优选为99.99％、进一步优选为99.999％以上。为了避免极薄铜层18的气相成膜时的温度上升，可以在溅射时设置工作台的冷却机构。另外，从没有异常放电等运转不良、稳定地进行成膜的观点出发，对于成膜时的压力，优选以0.1～2.0Pa的范围进行。该压力范围可以根据装置结构、容量、真空泵的排气容量、成膜电源的额定容量等通过对成膜电力、氩气的流量进行调整来设定。另外，对于溅射电力，可以考虑成膜的膜厚均匀性、生产率等，在靶的每单位面积为0.05～10.0W/cm2的范围内适宜设定。
实施例
通过以下的例子更具体地对本发明进行说明。
例1
如图1所示，在作为载体12的玻璃片上，依次成膜为中间层14(含Ti层和含Cu层)、金属氧化物层16a、碳层16b、蚀刻阻挡层17、以及极薄铜层18，从而制作带载体的铜箔10。具体的步骤如下。
(1)载体的准备
准备厚度1.1mm的玻璃片(材质：钠钙玻璃、轮廓算数平均偏差Ra：0.6nm、CentralGlass Co.,Ltd.制)。
(2)含Ti层的形成
在载体12的表面，利用以下的装置和条件，通过溅射形成厚度100nm的钛层作为含Ti层。
-装置：单片式磁控溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的Ti靶(纯度99.999％)
-极限真空度：不足1×10-4Pa
-载气：Ar(流量：100sccm)
-溅射压：0.35Pa
-溅射电力：1000W(3.1W/cm2)
-成膜时温度：40℃
(3)含Cu层的形成
在含Ti层上，利用以下的装置和条件，通过溅射形成厚度100nm的铜层作为含Cu层。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的铜靶(纯度99.98％)
-极限真空度：不足1×10-4Pa
-气体：氩气(流量：100sccm)
-溅射压：0.35Pa
-溅射电力：1000W(6.2W/cm2)
-成膜时温度：40℃
(4)金属氧化物层的形成
将形成有含Ti层和含Cu层的试样从真空中取出，进行1分钟大气暴露，由此进行含Cu层的表面氧化处理(自然氧化)。通过该表面氧化处理，形成氧化铜层作为金属氧化物层16a。根据目前为止的经验，推测氧化铜层的厚度为约0.5～1.0nm。
(5)碳层的形成
在金属氧化物层16a上，利用以下的装置和条件，通过溅射形成厚度6nm的无定形碳层作为碳层16b。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的碳靶(纯度99.999％)
-极限真空度：不足1×10-4Pa
-载气：Ar(流量：100sccm)
-溅射压：0.35Pa
-溅射电力：250W(0.7W/cm2)
-成膜时温度：40℃
(6)蚀刻阻挡层的形成
在碳层16b的表面，利用以下的装置和条件，通过溅射形成厚度100nm的钛层作为蚀刻阻挡层17。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的钛靶(纯度99.999％)
-载气：Ar(流量：100sccm)
-极限真空度：不足1×10-4Pa
-溅射压：0.35Pa
-溅射电力：1000W(3.1W/cm2)
(7)极薄铜层的形成
在蚀刻阻挡层17上，利用以下的装置和条件，通过溅射形成膜厚300nm的极薄铜层18，得到带载体的铜箔10。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的铜靶(纯度99.98％)
-极限真空度：不足1×10-4Pa
-载气：Ar(流量：100sccm)
-溅射压：0.35Pa
-溅射电力：1000W(3.1W/cm2)
-成膜时温度：40℃
例2
作为金属氧化物层16a，如下地通过反应性溅射形成氧化铜层来代替进行基于大气暴露的含Cu层的表面氧化处理，除此以外，与例1同样地操作，进行带载体的铜箔的制作。
(氧化铜层的形成)
在含Cu层的表面，利用以下的装置和条件，通过反应性溅射形成目标厚度为约1nm的氧化铜层。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的铜靶(纯度99.98％)
-极限真空度：不足1×10-4Pa
-气体：氩气(流量：90sccm)和氧气(流量：10sccm)
-溅射压：0.35Pa
-溅射电力：100W(0.3W/cm2)
-成膜时温度：40℃
例3
将金属氧化物层16a(氧化铜层)的目标厚度设为约2nm，除此以外，与例2同样地操作，进行带载体的铜箔的制作。
例4(比较)
未形成金属氧化物层16a(即不进行基于大气暴露的含Cu层的表面氧化处理)，除此以外，与例1同样地操作，进行带载体的铜箔的制作。
例5
如下地形成含Al层的单层来代替含Ti层和含Cu层这2层作为中间层14、并且如下地形成氧化铝层来代替氧化铜层作为金属氧化物层16a，除此以外，与例1同样地操作，进行带载体的铜箔的制作。
(含Al层的形成)
在载体12的表面，利用以下的装置和条件，通过溅射形成厚度200nm的铝层作为含Al层。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的Al靶(纯度99.9％以上)
-极限真空度：不足1×10-4Pa
-载气：Ar(流量：100sccm)
-溅射压：0.35Pa
-溅射电力：100W
-成膜时温度：40℃
(氧化铝层的形成)
将形成有含Al层的试样从真空中取出，进行1分钟大气暴露，由此进行含Al层的表面氧化处理(自然氧化)。通过该表面氧化处理，形成氧化铝层作为金属氧化物层16a。
例6
作为金属氧化物层16a，如下地通过反应性溅射形成氧化铝层来代替进行基于大气暴露的含Al层的表面氧化处理，除此以外，与例5同样地操作，进行带载体的铜箔的制作。
(氧化铝层的形成)
在含Al层的表面，利用以下的装置和条件，通过反应性溅射形成目标厚度为约1nm的氧化铝层作为金属氧化物层16a。
-装置：单片式DC溅射装置(Canon Tokki Corporation制、MLS464)
-靶：直径8英寸(203.2mm)的Al靶(纯度99.99％)
-极限真空度：不足1×10-4Pa
-气体：氩气(流量：90sccm)和氧气(流量：10sccm)
-溅射压：0.35Pa
-溅射电力：100W
-成膜时温度：40℃
例7
将金属氧化物层16a(氧化铝层)的目标厚度设为约2nm，除此以外，与例6同样地操作，进行带载体的铜箔的制作。
例8(比较)
作为金属氧化物层16a未形成氧化铝层(即不进行基于大气暴露的含Al层的表面氧化处理)，除此以外，与例5同样地操作，进行带载体的铜箔的制作。
评价
对于例1～8的带载体的铜箔，如以下所示地进行了各种评价。评价结果如表1所示。另外，在表1中也一并示出了中间层14和剥离层16的组成、以及金属氧化物层16a的形成条件。
<评价1：剥离层的半定量分析>
对例3和4，基于以下的测定条件和解析条件，通过XPS进行了所制作的带载体的铜箔的深度方向元素分析。该分析是针对载体的铜箔，在以下的条件下，边通过Ar离子蚀刻从极薄铜层表面起朝向深度方向下挖边进行的。
(Ar离子蚀刻条件)
-加速电压：500V
-蚀刻区域：2mm×2mm
-蚀刻速度：以SiO2换算计为1.4nm/分钟
(测定条件)
-装置：X射线光电子能谱仪(ULVAC-PHI,Inc.制、Quantum2000)
-激发X射线：单色化Al-Kα射线(1486.6eV)
-功率：100W
-加速电压：15kV
-X射线照射直径：直径100μm
-测定面积：直径100μm×1mm
-通能(pass energy)：23.5eV
-能量步长(energy step)：0.1eV
-中和枪：有
-测定元素及轨道：(扫频(sweep)数：比(Ratio)：循环(Cycle)数)
O 1s：(5：6：1)
Cu 2p3：(2：6：1)
C 1s：(3：6：1)
Ti 2p：(2：6：1)
Si 2p：(1：6：1)
(解析条件)
使用数据解析软件(ULVAC-PHI,Inc.制“Multi pack Ver9.4.0.7”)进行XPS数据的解析。用9点进行平滑处理，对于背景模式，使用Shirley。需要说明的是，半定量计算中的各元素的背景范围如下。
-O 1s：528.0～540.0eV
-Cu 2p3：927.0～939.0eV
-C 1s：280.0～292.0eV
-Ti 2p：451.2～464.5eV
-Si 2p：由于峰为检测下限以下，因此记为0。
剥离层16的深度方向的氧半定量值的结果如图2所示。根据图2明确确认到：进行基于反应性溅射的氧化铜层形成的例3与既没有进行氧化铜层形成也没有进行氧化处理的例4相比，含Cu层(中间层14的一部分)与剥离层16的界面的氧量增加，形成了氧化铜层作为金属氧化物层16a。此处，对于例4，虽然也确认到平均约2原子％的氧，但认为这是检测到了在碳层16b、蚀刻阻挡层17的成膜初期作为杂质混入的氧。需要说明的是，图2中的横轴(深度)的数值为将带载体的铜箔的极薄铜层表面作为分析开始位置(0nm)并根据SiO2换算的蚀刻速度求出分析位置距载体侧方向的深度而得到的值。
<评价2：载体-极薄铜层的剥离性>
关于进行了作为带载体的铜箔10中的热历程的真空热压制后的剥离强度的测定，通过一下方式进行。对带载体的铜箔10的极薄铜层18侧实施厚度18μm的面板电镀铜后，作为热历程，在350℃下以30kgf/cm2的压力进行2小时压制。对得到的覆铜层叠板，依据JIS C6481-1996，测定将与极薄铜层18成为一体的电镀铜层剥离时的剥离强度(gf/cm)。此时，测定宽度设为50mm，测定长度设为20mm。按照以下的基准对这样得到的剥离强度(平均值)进行分级。
评价A：未自然剥离、并且剥离强度为50gf/cm以下
评价B：剥离强度超过50gf/cm且为150gf/cm以下
评价C：发生自然剥离或超过150gf/cm(包括不可剥离)
需要说明的是，为了参考，也通过与上述同样的方法测定了如下情况下的剥离强度(gf/cm)：i)不进行真空热压制的情况(即无加热的情况)；ii)在250℃下以30kgf/cm2的压力进行2小时压制作为热历程的情况；以及，iii)在300℃下以30kgf/cm2的压力进行2小时压制作为热历程的情况，也将它们的结果一并示于表1。
<评价3：蚀刻阻挡层的耐化学试剂性>
1.8mol/L的稀硫酸处理各带载体的铜箔10的极薄铜层18的表面，进行表面的氧化膜的去除，然后，进行水洗和干燥。然后，在极薄铜层18的表面贴附感光性干膜，进行曝光和显影以赋予线/间隔(L/S)＝5μm/5μm的图案。对于显影，使用1.0重量％碳酸钠水溶液作为显影液，以25℃、2分钟、喷淋方式来进行。将这样得到的带布线层的无芯支撑体(在形成有图案的布线间露出了极薄铜层18的状态者)在包含硫酸-过氧化氢混合液的蚀刻液中、在23℃下以喷淋压力0.1MPa浸渍5分钟，由此进行铜闪蚀。这样，将在形成有图案的布线间露出的极薄铜层18去除。通过观察闪蚀后的带布线层的无芯支撑体来评价蚀刻阻挡层17的耐化学试剂性。按照以下的基准对评价结果进行分级。
评价A：蚀刻阻挡层没有完全溶解、是残留的。
评价B：蚀刻阻挡层微弱溶解，有对后续工序造成不良影响的可能性。
评价C：蚀刻阻挡层一部分溶解，对后续工序造成不良影响的可能性高。
[表1]
/>

Claims (11)

1.一种带载体的铜箔，其具备：
载体；
中间层，其设置于所述载体上；
剥离层，其设置于所述中间层上，包含金属氧化物层和碳层；以及，
极薄铜层，其设置于所述剥离层上，
在所述剥离层与所述极薄铜层之间还具备蚀刻阻挡层，所述蚀刻阻挡层由选自由Ti、Al、Nb、Zr、Cr、W、Ta、Co、Ag、Ni和Mo组成的组中的至少1种金属构成，
其中，所述中间层包含与所述载体邻接的含Ti层和与所述剥离层邻接的含Cu层、并且所述金属氧化物层为氧化铜层；或者，
所述中间层为含Ti层、并且所述金属氧化物层为氧化钛层；或者，
所述中间层为含Al层、并且所述金属氧化物层为氧化铝层，
所述中间层、所述碳层、所述金属氧化物层、所述蚀刻阻挡层、以及所述极薄铜层均为物理气相沉积(PVD)膜。
2.根据权利要求1所述的带载体的铜箔，其中，所述金属氧化物层与所述中间层邻接，并且所述碳层设置在靠近所述极薄铜层的一侧。
3.根据权利要求1所述的带载体的铜箔，其中，所述碳层与所述中间层邻接，并且所述金属氧化物层设置在靠近所述极薄铜层的一侧。
4.根据权利要求1～3中任一项所述的带载体的铜箔，其中，构成所述中间层的金属的标准电极电位大于等于构成所述蚀刻阻挡层的金属的标准电极电位。
5.根据权利要求1～3中任一项所述的带载体的铜箔，其中，所述中间层的厚度为10～1000nm。
6.根据权利要求1～3中任一项所述的带载体的铜箔，其中，所述金属氧化物层的厚度为100nm以下。
7.根据权利要求1～3中任一项所述的带载体的铜箔，其中，所述碳层的厚度为1～20nm。
8.根据权利要求1～3中任一项所述的带载体的铜箔，其中，所述蚀刻阻挡层的厚度为1～500nm。
9.根据权利要求1～3中任一项所述的带载体的铜箔，其中，所述极薄铜层的厚度为10～1000nm。
10.根据权利要求1～3中任一项所述的带载体的铜箔，其在350℃以上使用。
11.根据权利要求1～10中任一项所述的带载体的铜箔的制造方法，其特征在于，在所述载体上，将所述中间层、所述碳层、所述金属氧化物层、所述蚀刻阻挡层、以及所述极薄铜层均通过物理气相沉积(PVD)法来制作。
CN202310435041.2A 2017-12-27 2018-12-03 带载体的铜箔 Pending CN116583006A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017251237 2017-12-27
JP2017-251237 2017-12-27
PCT/JP2018/044391 WO2019131000A1 (ja) 2017-12-27 2018-12-03 キャリア付銅箔
CN201880070531.4A CN111278644B (zh) 2017-12-27 2018-12-03 带载体的铜箔

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201880070531.4A Division CN111278644B (zh) 2017-12-27 2018-12-03 带载体的铜箔

Publications (1)

Publication Number Publication Date
CN116583006A true CN116583006A (zh) 2023-08-11

Family

ID=67067183

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202310435041.2A Pending CN116583006A (zh) 2017-12-27 2018-12-03 带载体的铜箔
CN201880070531.4A Active CN111278644B (zh) 2017-12-27 2018-12-03 带载体的铜箔

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201880070531.4A Active CN111278644B (zh) 2017-12-27 2018-12-03 带载体的铜箔

Country Status (6)

Country Link
US (1) US11765840B2 (zh)
JP (2) JP7201621B2 (zh)
KR (2) KR102613885B1 (zh)
CN (2) CN116583006A (zh)
TW (1) TWI724351B (zh)
WO (1) WO2019131000A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021157373A1 (zh) 2020-02-04 2021-08-12
CN114196920B (zh) * 2021-12-22 2022-10-21 安徽铜冠铜箔集团股份有限公司 一种铜箔制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026059B2 (en) 2000-09-22 2006-04-11 Circuit Foil Japan Co., Ltd. Copper foil for high-density ultrafine printed wiring boad
JP4273895B2 (ja) 2003-09-24 2009-06-03 日立化成工業株式会社 半導体素子搭載用パッケージ基板の製造方法
JP2006130724A (ja) 2004-11-04 2006-05-25 Murata Mfg Co Ltd セラミックグリーンシート用キャリアフィルムおよびそれを用いたセラミックグリーンシートの加工方法、電子部品の製造方法
JP4754402B2 (ja) 2006-05-17 2011-08-24 三井金属鉱業株式会社 キャリア箔付銅箔、キャリア箔付銅箔の製造方法、キャリア箔付表面処理銅箔及びそのキャリア箔付表面処理銅箔を用いた銅張積層板
TW200804626A (en) * 2006-05-19 2008-01-16 Mitsui Mining & Smelting Co Copper foil provided with carrier sheet, method for fabricating copper foil provided with carrier sheet, surface-treated copper foil provided with carrier sheet, and copper-clad laminate using the surface-treated copper foil provided with carrier she
US7977798B2 (en) * 2007-07-26 2011-07-12 Infineon Technologies Ag Integrated circuit having a semiconductor substrate with a barrier layer
KR101063454B1 (ko) * 2008-12-08 2011-09-08 삼성전기주식회사 인쇄회로기판 제조 방법
JP5925981B1 (ja) * 2014-09-19 2016-05-25 三井金属鉱業株式会社 表面処理銅箔及びその製造方法、プリント配線板用銅張積層板、並びにプリント配線板
US10763002B2 (en) 2015-04-28 2020-09-01 Mitsui Mining & Smelting Co., Ltd. Surface-treated copper foil, manufacturing method therefor, printed circuit board copper-clad laminate, and printed circuit board
WO2017015084A1 (en) 2015-07-17 2017-01-26 Corning Optical Communications LLC Systems and methods for traceable cables
WO2017149810A1 (ja) 2016-02-29 2017-09-08 三井金属鉱業株式会社 キャリア付銅箔及びその製造方法、並びに配線層付コアレス支持体及びプリント配線板の製造方法
WO2017149811A1 (ja) 2016-02-29 2017-09-08 三井金属鉱業株式会社 キャリア付銅箔、並びに配線層付コアレス支持体及びプリント配線板の製造方法

Also Published As

Publication number Publication date
JPWO2019131000A1 (ja) 2021-01-21
CN111278644A (zh) 2020-06-12
TW201934781A (zh) 2019-09-01
KR20200102987A (ko) 2020-09-01
TWI724351B (zh) 2021-04-11
JP7412523B2 (ja) 2024-01-12
WO2019131000A1 (ja) 2019-07-04
KR102613885B1 (ko) 2023-12-15
CN111278644B (zh) 2023-05-12
KR20230172617A (ko) 2023-12-22
JP7201621B2 (ja) 2023-01-10
US11765840B2 (en) 2023-09-19
US20210059057A1 (en) 2021-02-25
JP2023033313A (ja) 2023-03-10

Similar Documents

Publication Publication Date Title
CN108699673B (zh) 带载体的铜箔、以及带布线层的无芯支撑体和印刷电路板的制造方法
CN108701656B (zh) 带载体的铜箔和其制造方法、以及带布线层的无芯支撑体和印刷电路板的制造方法
JP7412523B2 (ja) キャリア付銅箔
CN112969581A (zh) 层叠体
JP7336559B2 (ja) 積層体
JP7389052B2 (ja) 積層体
WO2021157373A1 (ja) キャリア付金属箔

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination