TWI721233B - 封裝結構及其形成方法 - Google Patents

封裝結構及其形成方法 Download PDF

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TWI721233B
TWI721233B TW106142985A TW106142985A TWI721233B TW I721233 B TWI721233 B TW I721233B TW 106142985 A TW106142985 A TW 106142985A TW 106142985 A TW106142985 A TW 106142985A TW I721233 B TWI721233 B TW I721233B
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semiconductor device
conductive
dielectric layer
package
redistribution line
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TW106142985A
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TW201838127A (zh
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鄭心圃
陳碩懋
許峯誠
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台灣積體電路製造股份有限公司
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Abstract

封裝結構包括第一介電層、第一半導體裝置、第一重分佈線、第二介電層、第二半導體裝置、第二重分佈線、第一導電件及第一模製材料。第一半導體裝置在第一介電層上方。第一重分佈線在第一介電層中且電連接至第一半導體裝置。第二介電層在第一半導體裝置上方。第二半導體裝置在第二介電層上方。第二重分佈線在第二介電層中且電連接至第二半導體裝置。第一導電件電連接第一重分佈線與第二重分佈線。第一模製材料模製第一半導體裝置及第一導電件。

Description

封裝結構及其形成方法
本揭露是有關於一種封裝結構及一種形成封裝結構之方法。
半導體工業藉由不斷減小最小特徵尺寸來持續提高各電子組件(例如，電晶體、二極體、電阻器、電容器等等)之整合密度，減小最小特征尺寸的方式允許更多組件整合至指定區域中。這些較小的電子組件在一些應用中亦要求更小封裝，利用比過去封裝更少之面積。用於半導體之一些更小類型的封裝包括四方扁平封裝(quad flat pack；QFP)、針柵陣列(pin grid array；PGA)、球柵陣列(ball grid array；BGA)、覆晶(flip chips；FC)、三維積體電路(three dimensional integrated circuits；3DIC)、晶圓級封裝(wafer level packages；WLPs)、軌跡上黏合(bond-on-trace；BOT)封裝、及層疊封裝(package on package；PoP)結構。
根據本揭露多個實施方式，一種封裝結構包括第一介電層、第一半導體裝置、第一重分佈線、第二介電層、第二半導體裝置、第二重分佈線、第一導電件及第一模製材料。第一半導體裝置在第一介電層上方。第一重分佈線在第一介電層中且電連接至第一半導體裝置。第二介電層在第一半導體裝置上方。第二半導體裝置在第二介電層上方。第二重分佈線在第二介電層中且電連接至第二半導體裝置。第一導電件電連接第一重分佈線與第二重分佈線。第一模製材料模製第一半導體裝置及第一導電件。第一模製材料接觸第一半導體裝置的頂面，且第一導電件的底面在第一模製材料的底面上方。
根據本揭露多個實施方式，一種封裝結構包含第一介電層、第一半導體裝置、導電件、第二介電層、第二半導體裝置、重分佈線、導電凸塊、第一模製材料與第二模製材料。第一半導體裝置在第一介電層上方。導電件在第一介電層上方。第二介電層在第一介電層、第一半導體裝置及導電件上方。第二半導體裝置在第二介電層上方。重分佈線在第二介電層中且電連接至第二半導體裝置，其中導電件包含電連接重分佈線的嵌入件，嵌入件具有朝向第一半導體裝置的第一側壁及與第一側壁相對的第二側壁。導電凸塊電連接重分佈線及導電件。第一模製材料模製且接觸嵌入件的第二側壁、第一半導體裝置與導電件。第二模製材料模製第二半導體裝置。
根據本揭露多個實施方式，一種封裝結構的形成方法包含形成第一組件，其中形成該第一組件包含形成導電件在緩衝層上方、形成第一半導體裝置以及形成第一重分佈線電連接至第一半導體裝置；形成一第二組件，其中第二組件包含第二半導體裝置與電連接第二半導體裝置的第二重分佈線；使用導電凸塊將第二組件接合至第一組件上，使得第二重分佈線經由導電凸塊電連接至導電件；以及將第二組件接合至第一組件上後，形成模製材料於第一組件與第二組件之間。
100、100a:半導體組件
102、102a:重分佈結構
104:介電結構
106、106a:佈線結構
110、110a:緩衝層
120、120a:介電層
130、130a:重分佈線
132:晶種層
134:導體
140:介電層
150、150a:重分佈線
152:晶種層
154:導體
160、160a:介電層
170:重分佈線
180:介電層
192:晶種層
194、194a:導體
210、210a:積體扇出通孔
212:晶種層
214:導體
215、215a:導電件
215a:導電件
220、220a:半導體裝置
222:半導體基板
224:接合墊
226:連接件
230:底部填充層
240、240a、240b:導電球體
250:模製化合物
250a:模製材料
260:矽通孔裝置
260a:矽通孔裝置
261:基板
262:互連層
264:接觸墊
265、265a:導電件
266:導電凸塊
266a:導電球體
268:矽通孔
300:半導體封裝
320:緩衝層
330:導電球體
400:封裝結構
410、410a、410b:積體扇出型封裝
500:封裝結構
510、510a、510b:模製封裝
600a:積體扇出型封裝
610:緩衝層
620:導電件(積體扇出通孔)
620a:積體扇出通孔
623:晶種層
625:導體
630、630a:半導體裝置
631:黏膠層
632:半導體基板
634:介電層
635:模製材料
636:導電柱
640、640a、640b、640c:介電層
650、650a、650b:重分佈線
652:晶種層
654:導體
660:接觸墊
662:晶種層
664:導體
670、670a:導電球體
700:封裝結構
A1、A3:黏膠層
C1、C3:載體
DT:切割膠帶
O1~O15:開口
P1~P4、P11、P12:光阻
當結合附圖閱讀時，自以下詳細描述最佳地理解本揭露之態樣。應當注意，根據工業中之標準實務，各特徵並未按比例繪製。事實上，為論述清楚，各特徵之大小可任意地增加或縮小。
第1圖至第19圖為根據本揭露之一些實施方式之製造封裝結構的中間階段之剖面圖。
第20圖為根據本揭露之一些實施方式之半導體組件的剖面圖。
第21圖至第22圖為在第17圖之步驟後的製造封裝結構的中間階段的剖面圖。
第23圖為根據本揭露之一些實施方式之封裝結構的剖面圖。
第24圖至第32圖為根據本揭露之一些實施方式之製造封裝結構的中間階段之剖面圖。
第33圖為根據本揭露之一些實施方式之模製封裝的剖面圖。
第34圖為根據本揭露之一些實施方式之模製封裝的剖面圖。
第35圖為根據本揭露之一些實施方式之封裝結構的剖面圖。
第36圖至第51圖為根據本揭露之一些實施方式之製造封裝結構的中間階段之剖面圖。
第52圖為根據本揭露之一些實施方式之積體扇出型封裝的剖面圖。
第53圖為根據本揭露之一些實施方式之積體扇出型封裝的剖面圖。
第54圖為根據本揭露之一些實施方式之封裝結構的剖面圖。
以下揭露提供許多不同實施方式或例子，以實現所提供之標的的不同特徵。下文描述之組件及排列之特定實例以簡化本揭露。當然，此等僅僅為實例且不意欲作為限制。例如，在隨後描述中在第二特徵上方或在第二特徵上之第一特徵之形成可包括第一及第二特徵形成為直接接觸之實施方式；以及亦可包括可在第一及第二特徵之間形成額外 特徵，以使得第一及第二特徵可不直接接觸之實施方式。另外，本揭露可能在各實例中重複組件符號及/或字母。重複為出於簡易及清楚之目的，且本身不指示所論述之各種實施方式及/或配置之間關係。
另外，空間相對術語，諸如「在...之下」、「低於」、「下部」、「高於」、「上部」等，可在本文用以便於描述，以描述如在附圖中圖示之一個組件或特徵相對另一組件或特徵的關係。除圖形中描繪之方向外，空間相對術語意圖是包含在使用或操作中之裝置之不同的方向。裝置可為不同朝向(旋轉90度或以其他的方向)及可因此相應地解釋在本文中使用之空間相對的描述詞。
本揭露亦可包含其他技術特徵及製程。例如，可包含測試結構以幫助三維封裝及三維積體電路裝置的驗證測試。測試結構可以包含，例如，在重分佈層中或基板上形成之測試墊，此測試墊允許三維封裝及三維積體電路之測試、使用探針及/或探針板、及類似物。上述驗證測試可以對中間結構以及最終結構執行。另外，本文揭露之結構及方法可以結合測試方法使用，此測試方法結合已知良好晶粒之中間驗證以增加良率與降低成本。
第1圖至第19圖為根據本揭露之一些實施方式之製造封裝結構的中間階段之剖面圖。參閱第1圖。黏膠層A1在載體C1上形成。載體C1可為空白玻璃載體、空白陶瓷載體、金屬框或類似物。黏膠層A1可由黏膠組成，諸如紫外光(ultra-violet；UV)膠、光熱轉換(light-to-heat conversion；LTHC)膠或類似物，雖然可以使用其他類型之黏膠。緩衝層110可例如用旋轉塗佈製程、薄膜層壓製程或沉積製程形成在黏膠層A1上方。緩衝層110為介電層，其可為聚合物層。聚合物層可以包括，例如聚醯亞胺、聚苯噁唑(PBO)、苯並環丁烯(BCB)、ajinomoto增設膜(ajinomoto buildup film；ABF)、阻焊(solder resist；SR)膜或類似物。在一些實施方式中，緩衝層110可為組合層，其結合緩衝層110與黏膠層A1於一個層中。緩衝層110可為大體上平坦的層，具有大體上均於的厚度，其中厚度可大於約2μm或可在0.5μm至約40μm之範圍中。在一些實施方式中，緩衝層110之頂面及底面亦為大體上平坦的。
參閱第2圖。例如，使用旋轉塗佈製程或層壓製程在緩衝層110上方形成介電層120。之後，介電層120經圖案化以形成開口O1。開口O1可以佈置在對應於隨後形成之球柵陣列(BGA)的行及列之柵格圖案中。介電層120可以使用微影製程圖案化。在一些實施方式中，介電層120可以為聚合物層。聚合物層可以包括，例如聚醯亞胺、聚苯噁唑(PBO)、苯並環丁烯(BCB)、ajinomoto增設膜(ABF)、阻焊(SR)膜或類似物。
參閱第3圖。晶種層132在載體C1上方形成。晶種層132在載體C1上之緩衝層110及介電層120上方形成。晶種層132包括例如鈦(Ti)、銅(Cu)或其組合，並且例如在一些實施方式中使用物理氣相沉積(physical vapor deposition；PVD)或藉由箔材料之層壓而沉積。或者，晶 種層132可以包括其他材料及尺寸，且可使用其他方法形成。之後，光阻P1塗佈在晶種層132上方且隨後被圖案化。如此一來，開口O2在光阻P1中形成，且晶種層132之一些部分經由開口O2暴露。
參閱第4圖。導體134經由鍍覆(其可為電鍍或無電電鍍)分別在光阻P1之開口O2中形成。導體134被電鍍在晶種層132之暴露部分上。導體134可以包括金屬或金屬合金，此金屬合金包括鋁、銅、鎢及/或其合金。在電鍍導體134之後，去除光阻P1以暴露晶種層132之一些部分。
參閱第5圖。執行蝕刻操作以去除晶種層132之暴露部分，且蝕刻操作可以包括非等向性蝕刻。被導體134覆蓋之晶種層132的部分仍然未蝕刻。在本文中，導體134及其下方晶種層132的剩餘部分組合成為重分佈線(redistribution lines；RDL)130。雖然晶種層132繪示為與導體134分開之層，但是當晶種層132由類似於或大體上相同於其上導體134之材料組成時，晶種層132可以與導體134融合而在兩者間無可區分的界面。在替代實施方式中，在晶種層132與其上導體134之間存在可區分的界面。
參閱第6圖。介電層140在重分佈線130上方形成。介電層140可以包括聚合物，諸如聚醯亞胺、苯並環丁烯(BCB)、聚苯噁唑(PBO)或類似物，其例如使用旋轉塗佈製程或層壓製程沉積。或者，介電層140可以包括非有機介電材料，諸如氧化矽、氮化矽、碳化矽、氮氧化矽或類似物。介電層140使用微影製程圖案化。例如，光阻(未繪示)可以 在介電層140上方形成，以及光阻藉由暴露至能量或光而圖案化，此能量或光從其上具有預定圖案的微影遮罩反射或通過。顯影光阻，且使用灰化及/或蝕刻製程去除光阻之曝光(或未曝光，取決於光阻為正型還是負型)區域。光阻隨後在蝕刻製程期間作為蝕刻遮罩。介電層140之暴露部分在蝕刻製程期間去除以形成開口O3，經由開口O3暴露重分佈線130之一些部分。隨後去除光阻。
參閱第7圖。晶種層152在載體C1上方形成。晶種層152在介電層140上方及在介電層140之開口O3(如第6圖所示)中形成。在一些實施方式中，晶種層152在介電層140及開口O3(如第6圖所示)上共形地形成。晶種層152包括例如鈦(Ti)、銅(Cu)或其組合，且例如在一些實施方式中使用物理氣相沉積(PVD)或藉由箔材料之層壓而沉積。或者，晶種層152可以包括其他材料且可使用其他方法形成。
在形成晶種層152之後，光阻P2塗佈在晶種層152上方且隨後被圖案化。結果，開口O4在光阻P2中形成，晶種層152之一些部分經由開口O4暴露晶種層152。使用微影技術圖案化光阻P2以定義出在後續步驟中形成之導體154的圖案。導體154例如經由鍍覆(其可為電鍍或無電電鍍)分別在光阻P2之開口O4中形成。導體154被電鍍在晶種層152之暴露部分上。導體154可包括金屬或金屬合金，包括鋁、銅、鎢及/或其合金。
在電鍍導體154之後，去除光阻P2，及暴露晶種層152之一些部分。可執行蝕刻步驟以去除晶種層152之 暴露部分，並且蝕刻步驟可以包括非等向性蝕刻。另一方面，被導體154覆蓋之晶種層152的部分仍然未蝕刻，結構如第8圖所示。導體154及晶種層152之剩餘部分可共同地成為重分佈線(RDL)150。雖然晶種層152繪示為與導體154分隔之層，但是當晶種層152由類似於或大體上相同於其上導體154之材料組成時，晶種層152可以與導體154融合而在兩者間無可區分的界面。在替代實施方式中，在晶種層152與其上導體154之間存在可區分的界面。
參閱第9圖。介電層160在重分佈線150上方形成，使得重分佈線150嵌入介電層160中。介電層160可以包括聚合物，諸如聚醯亞胺、苯並環丁烯(BCB)、聚苯噁唑(PBO)或類似物，及例如使用旋轉塗佈製程或層壓製程沉積。或者，介電層160可以包括非有機介電材料，諸如氧化矽、氮化矽、碳化矽、氮氧化矽或類似物。介電層160使用微影製程圖案化。例如，光阻(未繪示)可以在介電層160上方形成，以及光阻藉由暴露至能量或光而圖案化，此能量或光從其上具有預定圖案的微影遮罩反射或通過。顯影光阻，且使用灰化及/或蝕刻製程去除光阻之曝光(或未曝光，取決於光阻為正型還是負型)區域。光阻隨後在蝕刻製程期間作為蝕刻遮罩。介電層160之暴露部分在蝕刻製程期間經去除以形成開口O5，重分佈線150之一些部分經由開口O5暴露。
重分佈線之層數及介電層之數目並不限制本揭露之各種實施方式。例如，在形成第9圖之結構之後，第10圖中所示的另一層重分佈線170及另一介電層180可經由第 6圖至第9圖所示之步驟在重分佈線150及介電層160上方形成。為了簡化描述，形成重分佈線170及介電層180之步驟不再重複贅述。
參閱第10圖。介電層180經圖案化而形成開口O6以暴露重分佈線170之一些部分。之後，毯覆晶種層192在介電層180及暴露之重分佈線170上方形成，如第11圖所示。
參閱第12圖。光阻P3塗佈在晶種層192上方且隨後被圖案化。如此一來，開口O7在光阻P3中形成，晶種層192之一些部分由開口O7暴露。後來，導體194經由鍍覆方法分別在光阻P3之開口O7中形成，鍍覆方法可為電鍍或無電電鍍。導體194被電鍍在晶種層192之暴露部分上。在電鍍導體194之後，去除光阻P3以暴露晶種層192之一些部分。
參閱第13圖。執行蝕刻操作以去除晶種層192之暴露部分，並且蝕刻操作可以包括非等向性蝕刻。另一方面，被導體194覆蓋之晶種層192的部分仍然未被蝕刻。
緩衝層110、介電層120、重分佈線130、介電層140、重分佈線150、介電層160、重分佈線170、介電層180、晶種層192及導體194可共同地作為重分佈結構102。在一些實施方式中，緩衝層110、介電層120、140、160、180可作為重分佈結構102之介電結構104。重分佈線130、150、170、晶種層192及導體194可作為重分佈結構102之佈線結構106。
參閱第14圖。晶種層212例如經由PVD或金屬箔層壓在重分佈結構102上形成。晶種層212可以包括銅、銅合金、鋁、鈦、鈦合金或其組合。在一些實施方式中，晶種層212包括鈦層及在鈦層上方之銅層。在替代實施方式中，晶種層212為銅層。之後，光阻P4塗佈在晶種層212上方且隨後經圖案化而暴露晶種層212之一些部分。如此一來，開口O8在光阻P4中形成，晶種層212之一些部分經由開口O8暴露。
參閱第15圖。導體214經由例如鍍覆方法分別在光阻P4之開口O8中形成，鍍覆方法可為電鍍、無電電鍍或金屬膏印刷。導體214分別被電鍍在開口O8下之晶種層212的暴露部分上。導體214可以包括銅、鋁、鎢、鎳、焊料、銀或其合金。導體214之俯視形狀可為矩形、正方形、圓形或類似形狀。在電鍍導體214之後，去除光阻P4，且暴露晶種層212之一些部分。
參閱第16圖。執行蝕刻步驟以去除未被導體214覆蓋之晶種層212的暴露部分，其中蝕刻步驟可包括非等向性蝕刻。另一方面，由導體214覆蓋之晶種層212的部分仍然未被蝕刻。在本文中，導體214及其下晶種層212之剩餘部分組合地作為積體扇出(through integrated fan-out；InFO)通孔(TIV)210，其亦稱為通孔。雖然晶種層212繪示為與導體214分隔之層，但是當晶種層212由類似於或大體上相同於其上導體214之材料組成時，晶種層212可以與導體214融合而在兩者之間沒有可區分的界面。 在替代實施方式中，在晶種層212與其上導體214之間存在可區分的界面。
在形成積體扇出通孔210之後，暴露未被導體214覆蓋之一些導體194，以便後續放置之半導體裝置220(見第17圖)可經由預先暴露之導體194電連接至重分佈結構102。在放置半導體裝置220之前形成重分佈結構102的方法在本文可稱作「RDL為先」(RDL-first)製程。
參閱第17圖。使用拾取及放置的機器、人工等等將半導體裝置220設置在或放置在重分佈結構102上。半導體裝置220之數目並不限制本揭露之各種實施方式。半導體裝置220之厚度可為相同的或不同的，且本揭露之各種實施方式並不限於此。半導體裝置220可電連接至未被積體扇出通孔210覆蓋之重分佈結構102的一些導體194。例如，半導體裝置220之底部上之接合墊224(諸如銅墊)電連接至導體194。換言之，使用「覆晶」(flip chip)方法將半導體裝置220設置在重分佈結構102上；即，在半導體裝置220之面上的接合墊224經「翻轉」，所以它們「面朝下」，且接合墊224使用導電材料連接至導體194。例如，接合墊224可經由連接件226電連接及機械連接至重分佈結構102之暴露的導體194。在一些實施方式中，導體194形成為墊，連接件226可以為焊料凸塊或焊球，這些焊料凸塊或焊球實體接觸導體194而形成墊上焊料(solder-on-pad；SOP)連接物。在一些其他實施方式中，導體194可以形成為走線(trace)，及連接件226可以包括非焊料金屬凸塊。非焊料金 屬凸塊可以包括銅柱且可以包括一或多個包括鎳、金、鈀或其他適宜材料的層。這些非焊料金屬凸塊(例如，連接件226之代替類型)及導體194可以藉由焊料接合以形成走線上凸塊(bump-on-trace；BOT)連接物。藉由連接件226形成之SOP連接物或BOT連接物，半導體裝置220可以與重分佈結構102電連接。
如第17圖所示，根據一些實施方式，在「RDL為先」製程形成的結構中，底部填充層230可選擇性地形成在半導體裝置220與重分佈結構102之間，及連接件226之間。底部填充層230可以使用毛細底部填充(capillary underfill；CUF)方法作為液體施配(dispense)。樹脂或環氧樹脂液體在半導體裝置220下方流動，且填充在半導體裝置220與重分佈結構102之間的空間。室溫、UV或熱固化可以用以固化底部填充層230。底部填充層230可至少對其上的半導體裝置220及其下的重分佈結構102提供機械強度及應力消除。在一些實施方式中，底部填充層230與後續用來模製半導體裝置220形成的模製化合物250(見第22圖)相同。即，在半導體裝置220與重分佈結構102之間的空間可以由後續形成之模製化合物250填充。
在一些實施方式中，半導體裝置220為未封裝半導體裝置，諸如邏輯裝置晶粒(例如，加速處理單元(accelerated processing unit；APU)、圖形處理單元(graphics processing unit；GPU)、壓電多層促動器(piezoelectric multilayer actuator；PMA)、壓電促動器 (piezoelectric actuator；PA)等等)，記憶體裝置晶粒(例如，低功率雙倍資料速率(low power double-data-rate；LPDDR)、快閃(flash)、高頻寬記憶體(high bandwidth memory；HBM)等等)，或感測裝置晶粒(例如，接觸影像感測器(contact image sensor；CIS)、微電機系統(micro-electro-mechanical system；MEMS)等等)。在一些實施方式中，半導體裝置220設計來用於行動應用且可為中央計算單元(central computing unit；CPU)晶粒、功率管理積體電路(power management integrated circuit；PMIC)晶粒、收發器(transceiver；TRX)晶粒或類似物。半導體裝置220包括半導體基板222(例如矽基板)，以及自半導體裝置220之底部介電層(未繪示)凸出或齊平的接合墊224。
參閱第18圖。重分佈結構102從載體C1脫離。黏膠層A1亦自重分佈結構102之緩衝層110清除。去除黏膠層A1之結果會暴露重分佈結構102之緩衝層110。在一些實施方式中，第18圖所示之結構黏附至切割膠帶(未繪示)。在一些實施方式中，層壓薄膜(未繪示)可放置在暴露之緩衝層110上，其中層壓薄膜可以包括SR、ABF、背面塗層膠帶或類似物。在替代實施方式中，沒有層壓膜放置在緩衝層110上方。
參閱第19圖。圖案化緩衝層110以形成開口O9，藉此暴露重分佈線130。在一些實施方式中，執行雷射鑽孔製程以形成開口O9以去除緩衝層110之部分及晶種層 132之部分。即，開口O9可為雷射鑽孔開口。雷射鑽孔製程可以產生開口O9之側壁的鋸齒輪廓或粗糙輪廓。在一些其他實施方式中，光微影製程亦可用以形成開口O9以去除緩衝層110之部分，隨後執行蝕刻步驟以去除晶種層132之暴露部分，其中蝕刻步驟可包括非等向性蝕刻。如此一來，導體134之部分經由開口O9而暴露。在一些實施方式中，開口O9佈置在行及列之柵格圖案中，以便後續在開口O9中形成之導電凸塊(例如，導電球體240)能形成BGA。
導電球體240在重分佈線130之暴露部分上形成。換言之，導電球體240電連接至重分佈線130。如此一來，導電球體240可經由重分佈線130電偶接至重分佈線150。導電球體240之形成可以包括在緩衝層110之開口O9中放置焊球，且隨後將焊球回焊。因此，導電球體240部分嵌入式地保留在緩衝層110之開口O9中。在形成導電球體240之後，執行切割製程沿線L-L切割介電結構104，使得至少一個半導體組件100能形成。在一些實施方式中，此組件黏附至切割膠帶，此切割膠帶可在切割製程之後去除。
在形成導電球體240之後，可對重分佈結構102、半導體裝置220及積體扇出通孔210執行電性測試，其可有助於在模製半導體裝置220及積體扇出通孔210之前解決一些問題(例如，缺陷/可靠度)。換言之，根據本揭露之一些實施方式之RDL為先的製程允許經由如導電球體240對中間封裝執行電性測試。以這種方法，中間封裝，即半導體組件100，當其通過電性測試時可確定為已知良好的 封裝。另外，半導體組件100對熱敏感的半導體裝置220是有益的，因為重分佈結構102是在設置半導體裝置220之前形成，而重分佈結構102是被施以高溫製程的，因此能避免半導體裝置220損壞。
第20圖為根據本揭露之一些實施方式之半導體組件100a的剖面圖。半導體組件100a可以藉由如上所述之半導體組件100的製造步驟而形成。半導體組件100a具有重分佈線130a及比半導體組件100之導電球體240數量少的導電球體240a。重分佈線130a位於介電層120a中且電連接至半導體裝置220a及積體扇出通孔210a，且導電球體240a電連接至重分佈線130a。在一些實施方式中，半導體組件100a包括半導體裝置220a，其與第19圖之半導體裝置220相同。在替代實施方式中，第20圖之半導體裝置220a不同於第19圖之半導體裝置220，本揭露之各種實施方式並不限於此。
在形成第19圖之半導體組件100及第20圖之至少一個半導體組件100a之後，半導體組件100a經由半導體組件100a之導電球體240a及半導體組件100之積體扇出通孔210接合至半導體組件100。導電球體240a分別與積體扇出通孔210大體上對齊。如此一來，半導體組件100a可堆疊在半導體組件100上。
在一些實施方式中，半導體組件100a之積體扇出通孔210a分別與導電球體240a大體上對齊。這樣的配置，至少兩個半導體組件100a可經由上半導體組件100a之 導電球體240a及下半導體組件100a之積體扇出通孔210a堆疊。
第21圖至第22圖為在第19圖之步驟後的製造封裝結構的中間階段的剖面圖。參閱第21圖。在形成半導體組件100及多個半導體組件100a之後，半導體組件100a其中之一經由半導體組件100a底側之導電球體240a及半導體組件100頂側之積體扇出通孔210堆疊在半導體組件100上。如此一來，半導體組件100a之重分佈線130a接合至半導體組件100之重分佈線170。換言之，包括積體扇出通孔210及其上導電球體240a之導電件215電連接半導體組件100a之重分佈線130a與半導體組件100之重分佈線170。此外，包括積體扇出通孔210a及其上導電球體240a之導電件215a經由重分佈線150a電連接重分佈線130a。之後，其他半導體組件100a經由導電球體240a及積體扇出通孔210a依序堆疊在第一個堆疊的半導體組件100a上。在一些實施方式中，半導體組件100a為相同的。在其他實施方式中，半導體組件100a為不同的。例如，半導體組件100a可以具有不同種類的半導體裝置220a、不同層數的重分佈線150a、及/或不同佈局的重分佈線150a。
在半導體組件100a接合至半導體組件100後，半導體封裝300接合至上半導體組件100a。半導體封裝300在半導體組件100a及半導體組件100之堆疊組件上方。在一些實施方式中，半導體封裝300包括基板320，及導電凸塊或導電球體330。導電凸塊330自基板320凸出。此外，半 導體封裝300之導電凸塊330分別與上半導體組件100a之積體扇出通孔210a大體上對齊。在這種配置中，半導體封裝300可經由半導體封裝300底側之導電凸塊330及上半導體組件100a頂側之積體扇出通孔210a接合至上半導體組件100a，使得半導體封裝300經由導電凸塊330電連接至其下的積體扇出通孔210a。然而，前述步驟之順序並不用以限制本揭露之各種實施方式。例如，接合半導體組件100a以形成堆疊結構，隨後半導體封裝300接合至堆疊結構之頂側。之後，堆疊結構之下側接合至半導體組件100，使得第21圖之結構仍可獲得。在一些實施方式中，半導體封裝300可以為記憶體裝置，諸如靜態隨機存取記憶體(static random access memory；SRAM)或動態隨機存取記憶體(dynamic random access memory；DRAM)裝置。半導體封裝300可以包括在其內的複數個堆疊記憶體晶粒。此外，半導體封裝300之其他類型也可位於半導體組件100a上，本揭露之各種實施方式並不限於此。
參閱第22圖。在形成如第21圖圖示之堆疊結構後，模製材料(或模製化合物)250模製半導體裝置220、半導體裝置220a、積體扇出通孔210、積體扇出通孔210a及導電球體240a、導電球體330。半導體封裝300在模製材料250上方。換言之，模製材料250在半導體組件100與其上半導體組件100a之間、兩個相鄰半導體組件100a之間、及半導體封裝300與其下半導體組件100a之間形成。此外，模製材料250圍繞半導體裝置220、半導體裝置220a、積體扇 出通孔210、積體扇出通孔210a及導電球體240a、導電球體330。模製材料250填充半導體裝置220與積體扇出通孔210之間的縫隙及填充半導體裝置220a與積體扇出通孔210a之間的縫隙。另外，模製材料250具有在半導體裝置220與介電層120a(或緩衝層110a)之間的部分。積體扇出通孔210、導電球體240a、及積體扇出通孔210a與模製材料250接觸。模製材料250可與介電層180、介電層160a、緩衝層110a及基板320接觸。在形成模製材料250之後，半導體組件100及其上模製材料250形成積體扇出型封裝410，且半導體組件100a及其上模製材料250形成積體扇出型封裝410a。因此，積體扇出型封裝410、積體扇出型封裝410a及半導體封裝300之組合形成封裝結構400，所得之結構如第22圖所示。
在一些實施方式中，模製材料250包括聚合物基材料。「聚合物」可表示熱固性聚合物、熱塑性聚合物、或其任何混合物。聚合物基材料可包括例如塑性材料、環氧樹脂、聚醯亞胺、聚對苯二甲酸乙二酯(PET)、聚氯乙烯(PVC)、聚甲基丙烯酸甲酯(PMMA)、摻雜有填充劑(包括纖維、黏土、陶瓷、無機顆粒)之聚合物化合物、或其任意組合。
因為單一模製步驟可讓模製材料250能填充在半導體組件100與其上半導體組件100a之間、兩個相鄰半導體組件100a之間、及在半導體封裝300與其下半導體組件 100a之間的縫隙，所以可以減少製造封裝結構400之週期時間(cycle time)及翹曲。
此外，當封裝結構400設置在印刷電路板(printed circuit board；PCB)上時，封裝結構400佔據與半導體組件100、半導體組件100a或半導體封裝300之面積相同的印刷電路板面積，因此印刷電路板被半導體組件100、半導體組件100a及半導體封裝300佔據的面積得以縮小。
由於封裝結構400為三維層疊封裝(PoP)結構，因此積體扇出型封裝410、積體扇出型封裝410a及半導體封裝300之間之短長度及高頻寬通訊可提升設有封裝結構400之系統的效能。此外，封裝結構400可以包括各種半導體裝置(例如，220及220a)及半導體封裝310，以便由設計者彈性使用。
在一些實施方式中，積體扇出型封裝410其內具有更多的半導體裝置220，積體扇出型封裝410a之至少一個其內具有更多的半導體裝置220a。這樣的配置結果，積體扇出型封裝410a之層數可以減少，但封裝結構400仍可具有相同的功能。此外，可降低封裝結構400之總高度。
第23圖為根據本揭露之一些實施方式之封裝結構400a的剖面圖。封裝結構400a包括積體扇出型封裝410、積體扇出型封裝410a及在其上的積體扇出型封裝410b。積體扇出型封裝410b及積體扇出型封裝410a之間的差異為在積體扇出型封裝410b中沒有積體扇出通孔210a及 其下導體194a。積體扇出型封裝410b之導電球體240b與其下積體扇出型封裝410a之積體扇出通孔210a大體上對齊，因此積體扇出型封裝410b之導電球體240b可分別接合至其下積體扇出型封裝410a之積體扇出通孔210a。
第24圖至第32圖為根據本揭露之一些實施方式之製造封裝結構的中間階段之剖面圖。參閱第24圖。包括介電結構104及佈線結構106a之重分佈結構102a在載體C1上形成。重分佈結構102a之形成類似上述之第1圖至第13圖所描述之重分佈結構102的形成，不再重複贅述。第24圖之佈線結構106a的圖案不同於第13圖之佈線結構106的圖案，但本揭露之各種實施方式並不限於此。
參閱第25圖。導電件265包括被動嵌入件260及導電凸塊266。在一些實施方式中，被動嵌入件260為矽通孔(through silicon via；TSV)裝置。半導體裝置220及矽通孔裝置260使用拾取及放置機器、人工或其他適宜方法設置在或放置在重分佈結構102a上。矽通孔裝置260在介電層180上方，且矽通孔268在矽通孔裝置260中且電連接至接觸墊264。導電凸塊266在矽通孔裝置260與重分佈線170之間且電連接矽通孔裝置260與重分佈線170。半導體裝置220之數目及矽通孔裝置260之數目不限制本揭露之各種實施方式。半導體裝置220及矽通孔裝置260可電連接至重分佈結構102a之導體194。半導體裝置220之接合墊224及矽通孔裝置260之接觸墊264使用導電材料連接至導體194。例如，接合墊224可經由連接件226電連接及機械連接至一 些導體194，連接件226例如導電凸塊，且接觸墊264可經由導電凸塊266電連接及機械連接至其餘導體194。
如在第25圖之組件所示，根據一些實施方式，在由「RDL為先」製程形成的結構中，底部填充層230可選擇性地在半導體裝置220與重分佈結構102a之間及連接件226之間形成，且可選擇性地在矽通孔裝置260與重分佈結構102a之間及導電球體266之間形成。
在一些實施方式中，矽通孔裝置260可包括例如，矽通孔(TSV)268及整合式被動元件(IPD，未繪示)。矽通孔裝置260允許高密度之結構於在其內形成，諸如矽通孔268及/或整合式被動元件。在一些實施方式中，矽通孔裝置260包含基板261，基板261包含半導體材料，諸如矽或類似物。基板261中之孔可充滿導體以形成矽通孔268及整合式被動元件，諸如溝槽電容器。矽通孔裝置260包含互連層262，其包括一或多層其內形成導電件的介電材料。在一些實施方式中，互連層262中之介電材料層由感光材料形成，諸如聚苯噁唑(PBO)、聚醯亞胺(PI)、苯並環丁烯(BCB)或類似物。在替代實施方式中，互連層262中之介電材料層可由諸如氮化矽的氮化物、諸如氮化矽的氧化物形成、磷矽酸鹽玻璃(PSG)、矽酸硼玻璃(BSG)、硼摻雜磷矽酸鹽玻璃(BPSG)或類似物形成。在一些替代實施方式中，互連層262可以包含嵌入件或封裝基板，諸如矽嵌入件、有機基板、層壓基板(例如，1-2-1層壓基板)或類似物。互連層262在相 對側之間提供電連接且可作為佈線結構。外部接觸墊264組例如使用導電凸塊266提供外部電連接。
如圖所示，相鄰矽通孔268的間距(pitch)比鄰近積體扇出通孔(例如，如前所述之積體扇出通孔210或積體扇出通孔210a)之間距短，因此若矽通孔268與凸塊接合，則具有較短間距之矽通孔268允許高密度凸塊。
參閱第26圖。模製材料(或模製化合物)250a模製在重分佈結構102a、半導體裝置220及矽通孔裝置260上。模製材料250a填充在半導體裝置220與矽通孔裝置260之間的縫隙中，且可與重分佈結構102a接觸，例如接觸重分佈結構102a之介電層180。模製材料250a之頂面高於半導體裝置220及矽通孔裝置260之頂面。
在一些實施方式中，模製材料250a包括聚合物基材料。「聚合物」可表示熱固性聚合物、熱塑性聚合物、或其任何混合物。聚合物基材料可包括例如塑性材料、環氧樹脂、聚醯亞胺、聚對苯二甲酸乙二酯(PET)、聚氯乙烯(PVC)、聚甲基丙烯酸甲酯(PMMA)、摻雜有填充劑(包括纖維、黏土、陶瓷、無機顆粒)之聚合物化合物、或其任意組合。
參閱第27圖。接下來，執行諸如研磨之平坦化製程以使模製材料250a變薄，直到暴露半導體裝置220及矽通孔裝置260之頂面。模製材料250a圍繞半導體裝置220及矽通孔裝置260。在一些實施方式中，在研磨模製材料250a後亦暴露在矽通孔裝置260頂面的矽通孔268。所得之結構 如第27圖所示，其中模製材料250a與半導體裝置220及矽通孔裝置260之側壁接觸。由於研磨，半導體裝置220之頂面與矽通孔裝置260之頂面大體上齊平(共面)，且與模製材料250a之頂面大體上齊平(共面)。研磨之結果，可能會產生諸如金屬顆粒之導電殘留物，並留在第27圖之結構的頂面上。因此，在研磨之後，清洗製程(例如經由濕式蝕刻)可以執行以去除導電殘留物。
參閱第28圖。接下來，模製封裝510從載體C1脫離。黏膠層A1亦自模製封裝510清除。去除黏膠層A1之結果，可暴露緩衝層110。參閱第28圖，具有半導體裝置220、模製材料250a及在其上之矽通孔裝置260的模製封裝510進一步黏附至切割膠帶DT，其中模製材料250a朝向切割膠帶DT且可接觸切割膠帶DT。在一些實施方式中，層壓薄膜(未繪示)置於暴露之緩衝層110上，其中層壓薄膜可包括ajinomoto增設膜(ABF)、阻焊(SR)膜、背面塗層膠帶或類似物。在替代實施方式中，沒有層壓薄膜置於緩衝層110上方。
開口O10在緩衝層110中形成。在形成緩衝層110之開口O10之後，經由開口O10暴露重分佈線130之晶種層132的部分。在一些實施方式中，執行雷射鑽孔製程以形成開口O10。在一些其他實施方式中，光微影製程亦可用以形成開口O10。之後，執行蝕刻步驟以去除晶種層132之暴露部分，其中蝕刻步驟可以包括非等向性蝕刻。如此一來，在晶種層132下之導體134的部分由開口O10暴露，以 便接受後續形成的導電球體240(見第29圖)。在一些實施方式中，開口O10佈置在行及列之柵格圖案中，使後續在開口O10中形成之導電球體240可形成球柵陣列(BGA)。
參閱第29圖。諸如導電球體240之導電凸塊在導體134之暴露部分上形成。換言之，導電球體240分別與導體134接觸，使得導電球體240可電連接至導體134。如此一來，導電球體240可經由導體134電偶接至佈線結構106a。導電球體240之形成可以包括在開口O10中放置焊球，且隨後將焊球回焊。
在形成導電球體240之後，執行切割製程以沿線L1切割介電結構104及模製材料250a，且也可去除切割膠帶DT，以形成複數個晶片尺寸模製封裝510。
在替代實施方式中，在脫離載體C1及清除黏膠層A1之後，執行一或多個蝕刻操作以去除緩衝層110及晶種層132之水平部分直到暴露導體134。所得之結構如第30圖所示，其中重分佈線130之頂面被暴露且與剩餘介電層120之頂面大體上齊平。在蝕刻製程之後，導電球體240在暴露之重分佈線130上形成，所得之結構如第31圖所示。
在形成導電球體240之後，執行切割製程以沿線L1切割介電結構104及模製材料250a，且也可去除切割膠帶DT，以形成複數個晶片尺寸模製封裝510，所得之結構如第32圖所示。在以下敘述中，第31圖之重分佈線130、導電球體240及介電層120形成於第32圖至第35圖之封裝中。在一些替換性實施方式中，第29圖之重分佈線130、導 電球體240、緩衝層110及介電層120可形成在第32圖至第35圖之封裝中，本揭露之各種實施方式不限於此。
第33圖為根據本揭露之一些實施方式之模製封裝510a的剖面圖。模製封裝510a可以藉由模製封裝510之前述製造步驟而形成。與模製封裝510相較，模製封裝510a具有在其內之重分佈線130a，且具有分別與模製封裝510其上矽通孔裝置260大體上對齊的導電球體240a。在一些實施方式中，模製封裝510a包括分別與第32圖之半導體裝置220及矽通孔裝置260相同的半導體裝置220a及矽通孔裝置260a。在替代實施方式中，半導體裝置220a及矽通孔裝置260a分別不同於第32圖之半導體裝置220及矽通孔裝置260，本揭露之各種實施方式不限於此。
第34圖為根據本揭露之一些實施方式之模製封裝510b的剖面圖。在一些實施方式中，第29圖之矽通孔裝置260a為可選擇的。模製封裝510b在模製材料250a中沒有矽通孔裝置，但在介電層160a上具有更多的模製材料250a以補充空缺。
第35圖為根據本揭露之一些實施方式之封裝結構500的剖面圖。在形成第32圖之模製封裝510，第33圖之至少一個模製封裝510a及第34圖之模製封裝510b後，模製封裝510b經由其導電球體240a及下方模製封裝510a之矽通孔裝置260a接合至模製封裝510a，且模製封裝510a經由其導電球體240a及模製封裝510之矽通孔裝置260接合至模製封裝510。導電球體240a在模製封裝510之矽通孔裝 置260與模製封裝510a之重分佈線130a之間，且電連接模製封裝510之矽通孔裝置260與模製封裝510a之重分佈線130a。因此，模製封裝510b之導電球體240a電連接至模製封裝510a之矽通孔裝置260a之矽通孔268，且模製封裝510a之導電球體240a電連接至模製封裝510之矽通孔裝置260的矽通孔268。換言之，包括矽通孔裝置260、導電球體266及導電球體240a之導電件265電連接模製封裝510a之重分佈線130a與模製封裝510之重分佈線170。此外，包括矽通孔裝置260a、導電球體266a及導電球體240a之導電件265a經由重分佈線150a電連接至重分佈線130a。這樣的配置，模製封裝510b在模製封裝510a上堆疊，且模製封裝510a在模製封裝510上堆疊，進而形成封裝結構500。
在一些實施方式中，模製封裝510a之矽通孔裝置260a與模製封裝510a之導電球體240a大體上對齊，因此至少兩個模製封裝510a可經由上模製封裝510a之導電球體240a及下模製封裝510a之矽通孔裝置260a而堆疊。例如，封裝結構500包括三個模製封裝510a，但本揭露之各種實施方式不限於此。
在一些實施方式中，底部填充UF選擇性地設置在模製封裝510b與其下模製封裝510a之間，在兩個相鄰模製封裝510a之間、及在模製封裝510a與其下模製封裝510之間，使得模製封裝510b穩固地置於模製封裝510a上，且模製封裝510a穩固地置於另一模製封裝510a或模製封裝510上。
第36圖至第51圖為根據本揭露之一些實施方式之製造封裝結構的中間階段之剖面圖。參閱第36圖。黏膠層A3在載體C3上形成。載體C3可為空白玻璃載體、空白陶瓷載體或類似物。黏膠層A3可由黏膠組成，諸如紫外線(UV)膠、光熱轉換(LTHC)膠或類似物，雖也可使用其他類型之黏膠。緩衝層610在黏膠層A3上方形成。緩衝層610為介電層，其可為聚合物層。聚合物層可以包括，例如聚醯亞胺、聚苯噁唑(PBO)、苯並環丁烯(BCB)、ajinomoto增設膜(ABF)、阻焊(SR)膜或類似物。
參閱第37圖。晶種層623例如經由物理氣相沉積(PVD)或金屬箔層壓而在緩衝層610上形成。晶種層623可以包括銅、銅合金、鋁、鈦、鈦合金或其組合。在一些實施方式中，晶種層623包括鈦層及在鈦層上方之銅層。在替代實施方式中，晶種層623為銅層。
參閱第38圖。光阻P11塗佈在晶種層623上方且隨後被圖案化。如此一來，開口O11在光阻P11中形成，經由開口O11暴露晶種層623之一些部分。
參閱第39圖。導體625經由鍍覆(其可為電鍍或無電電鍍)在光阻P11中形成。導體625被電鍍在晶種層623之暴露部分上。導體625可以包括銅、鋁、鎢、鎳、焊料或其合金。導體625之高度由後續放置之半導體裝置630(見第42圖)決定，其中在本揭露之一些實施方式中導體625之高度大於半導體裝置630之厚度。在鍍覆導體625後，去除光 阻P11，且所得之結構如第40圖所示。在去除光阻P11後，暴露晶種層623之一些部分。
參閱第41圖。可執行蝕刻步驟以去除晶種層623之暴露部分，其中蝕刻步驟可以包括非等向性蝕刻。另一方面，由導體625覆蓋之晶種層623的一些部分仍未被蝕刻。在本文中，導體625及其下晶種層623之剩餘部分組合地作為導電件620，為積體扇出(InFO)通孔(TIV)，其亦稱為通孔。雖然晶種層623繪示為與導體625分隔之層，但是當晶種層623由類似於或大體上相同於其上導體625之材料組成時，晶種層623可以與導體625融合而在兩者之間沒有可區分的界面。在替代實施方式中，在晶種層623與其上導體625之間存在可區分的界面。
第42圖繪示在緩衝層610上方放置半導體裝置630。半導體裝置630可經由黏膠層631黏附至緩衝層610。在一些實施方式中，半導體裝置630為非封裝的半導體裝置，即裝置晶粒。例如，半導體裝置630可為其內包括邏輯電晶體之邏輯裝置晶粒。在一些實施方式中，半導體裝置630經設計以用於行動應用，且可以為中央計算單元(CPU)晶粒、功率管理積體電路(PMIC)晶粒、收發器(TRX)晶粒或類似物。每個半導體裝置630包括接觸黏膠層631之半導體基板632(例如，矽基板)，其中半導體基板632之背表面接觸黏膠層631。
在一些實施方式中，導電柱636(諸如銅柱)形成為半導體裝置630之頂部，且電偶接至諸如半導體裝置630 中之電晶體(未繪示)的裝置。在一些實施方式中，介電層634在對應的半導體裝置630之頂面上形成，其中導電柱636具有至少在介電層634中的下部分。在一些實施方式中導電柱636之頂面與介電層634之頂面大體上齊平。或者，未形成介電層，且導電柱636自對應的半導體裝置630之頂部介電層凸出(未繪示)。
參閱第43圖。模製材料635在半導體裝置630及積體扇出通孔620上形成。模製材料635填充在半導體裝置630與積體扇出通孔620之間的縫隙，且可以接觸緩衝層610。此外，當導電柱636凸出金屬柱(未繪示此配置)時，模製材料635填充進導電柱636之間的縫隙中。模製材料635之頂面高於導電柱636及積體扇出通孔620之頂端。
在一些實施方式中，模製材料635包括聚合物基材料。「聚合物」可表示熱固性聚合物、熱塑性聚合物、或其任意混合物。聚合物基材料可包括例如塑性材料、環氧樹脂、聚醯亞胺、聚對苯二甲酸乙二酯(PET)、聚氯乙烯(PVC)、聚甲基丙烯酸甲酯(PMMA)、摻雜有填充劑(包括纖維、黏土、陶瓷、無機顆粒)之聚合物化合物、或其任意組合。
接下來，執行研磨步驟以使模製材料635變薄，直到暴露導電柱636及積體扇出通孔620。所得之結構如第44圖所示，其中模製材料635接觸半導體裝置630及積體扇出通孔620之側壁。模製材料635圍繞半導體裝置630及積體扇出通孔620。由於研磨，積體扇出通孔620之頂端 與導電柱636之頂端大體上齊平(共面)，且與模製材料635之頂面大體上齊平(共面)。經由研磨的結果，可能生成諸如金屬顆粒之導電殘留物，且留在第44圖之結構的頂面上。因此，在研磨之後，清洗製程(例如經由濕式蝕刻)可以執行以去除導電殘留物。
參閱第45圖。介電層640在積體扇出通孔620、模製材料635及半導體裝置630上方形成。介電層640可以包括聚合物，諸如聚醯亞胺、苯並環丁烯(BCB)、聚苯噁唑(PBO)或類似物，其例如使用旋轉塗佈製程或層壓製程沉積。或者，介電層640可以包括非有機介電材料，諸如氧化矽、氮化矽、碳化矽、氮氧化矽或類似物。介電層640使用微影製程圖案化。例如，光阻(未繪示)可以在介電層640上方形成，以及光阻藉由暴露至能量或光而圖案化，此能量或光從其上具有預定圖案的微影遮罩反射或通過。顯影光阻，且使用灰化及/或蝕刻製程去除光阻之曝光(或未曝光，取決於光阻為正型還是負型)區域。光阻隨後在蝕刻製程期間作為蝕刻遮罩。介電層640之暴露部分在蝕刻製程期間去除以形成開口O12，經由開口O12暴露積體扇出通孔620及導電柱636。接著，去除光阻。
參閱第46圖。晶種層652在介電層640上方及介電層640之開口O12中形成。在一些實施方式中，晶種層652在介電層640上及開口O12中共形地形成。晶種層652包括諸如鈦(Ti)、銅(Cu)或其組合之約0.3μm之材料，其例如在一些實施方式中使用物理氣相沉積(PVD)或藉由箔材料 之層壓而沉積。或者，晶種層652可以包括其他材料及尺寸且可使用其他方法形成。
在形成晶種層652之後，光阻P12塗佈在晶種層652上方且隨後被圖案化。因此，開口O13在光阻P12中形成，經由開口O13暴露晶種層652之一些部分。使用微影圖案化光阻P12以進一步定義後續步驟中形成之導體654的圖案。導體654例如經由鍍覆(其可為電鍍或無電電鍍)分別在光阻P12之開口O13中形成。導體654被鍍覆在晶種層652之暴露部分上。導體654可包括金屬或金屬合金，此金屬合金包括鋁、銅、鎢及/或其合金。
在鍍覆導體654之後，去除光阻P12，且暴露晶種層652之一些部分。可執行蝕刻步驟以去除晶種層652之暴露部分，且蝕刻步驟可以包括非等向性蝕刻。另一方面，由導體654覆蓋之晶種層652的一些部分仍未被蝕刻，所得之結構如第47圖所示。導體654及晶種層652之剩餘部分可共同地作為重分佈線(RDL)650。雖然晶種層652繪示為與導體654分隔之層，但是當晶種層652由類似於或大體上相同於其上導體654之材料組成時，晶種層652可以與導體654融合而在兩者之間大體上沒有可區分的界面。在替代實施方式中，在晶種層652與其上導體654之間存在可區分的界面。
參閱第48圖。介電層640a在重分佈線650及介電層640上方形成，使得重分佈線650嵌入介電層640a中。介電層640a可以包括聚合物，諸如聚醯亞胺、苯並環丁烯 (BCB)、聚苯噁唑(PBO)或類似物，其例如使用旋轉塗佈製程或層壓製程沉積。或者，介電層640a可以包括非有機介電材料，諸如氧化矽、氮化矽、碳化矽、氮氧化矽或類似物。介電層640a使用微影製程圖案化。例如，光阻(未繪示)可以在介電層640a上方形成，且光阻藉由暴露至能量或光而圖案化，此能量或光從其上具有預定圖案的微影遮罩反射或通過。顯影光阻，且使用灰化及/或蝕刻製程去除光阻之曝光(或未曝光，取決於光阻為正型還是負型)區域。光阻隨後在蝕刻製程期間作為蝕刻遮罩。介電層640a之暴露部分在蝕刻製程期間去除以形成開口O14，經由開口O14暴露重分佈線650之一些部分。
重分佈線650之層數及介電層之數目並不限制本揭露之各種實施方式。例如，在形成第48圖之結構後，如第49圖繪示之重分佈線650a、重分佈線650b之層及介電層640b、介電層640c可經由第45圖至第48圖之前述步驟在重分佈線650及介電層640a上方形成。為了簡化描述，將不重覆贅述形成重分佈線650a、重分佈線650b及介電層640b、介電層640c之步驟。此外，第49圖之接觸墊660之形成類似於第3圖至第5圖之步驟。
參閱第49圖。在介電層640c經圖案化以形成開口之後，晶種層662在介電層640c及開口中之重分佈線650b之暴露部分上方形成，隨後光阻塗佈在晶種層662上方且經圖案化以形成開口。接下來，導體664經由鍍覆分別在光阻之開口中形成，使得導體664被鍍覆在晶種層662之暴 露部分上。在電鍍導體664後，去除光阻以暴露晶種層662之一些部分，隨後執行蝕刻操作以去除晶種層662之暴露部分。如此一來，導體664及其下晶種層662之剩餘部分組合地作為第49圖之接觸墊660。
雖然晶種層662繪示為與導體664分隔之層，但當晶種層662由類似於或大體上相同於其上導體664之材料組成時，晶種層662可以與導體664融合而在兩者之間大體上沒有可區分的界面。在替代實施方式中，在晶種層662與其上導體664之間存在可區分的界面。
參閱第50圖。諸如導電球體670之導電凸塊在接觸墊660上形成。換言之，導電球體670分別與接觸墊660接觸，使導電球體670可電連接至接觸墊660。如此一來，導電球體670經由接觸墊660可電偶接至重分佈線650、重分佈線650a、重分佈線650b。在形成導電球體670之後，載體C3及黏膠層A3自緩衝層610去除。
參閱第51圖。載體C3脫離及黏膠層A3去除之果，在半導體裝置630及模製材料635上方之緩衝層610被暴露。隨後緩衝層610經圖案化以形成開口O15，藉此暴露積體扇出通孔620。在一些實施方式中，執行雷射鑽孔製程以形成開口O15。在一些其他實施方式中，光微影製程亦可用以形成開口O15及去除緩衝層610之部分。在一些實施方式中，第50圖之結構可在與載體C3脫離後黏附至切割膠帶(未繪示)。接下來，執行切割製程以沿線L2切割緩衝層610、模製材料635及介電層640與介電層640a~640c，使 得複數個晶片尺寸積體扇出型封裝600可被形成，所得之結構如第52圖所示。
第53圖為根據本揭露之一些實施方式之積體扇出型封裝600a的剖面圖。積體扇出型封裝600a可以藉由第52圖之積體扇出型封裝600的前述製造步驟而形成。相較於積體扇出型封裝600，積體扇出型封裝600a具有更少之導電球體670a。在一些實施方式中，積體扇出型封裝600a包括與第52圖之半導體裝置630相同的半導體裝置630a。在替代實施方式中，第53圖之半導體裝置630a不同於第52圖之半導體裝置630，本揭露之各種實施方式並不限於此。
第54圖為根據本揭露之一些實施方式之封裝結構700的剖面圖。在形成第52圖之積體扇出型封裝600及第53圖之至少一個積體扇出型封裝600a之後，積體扇出型封裝600a經由積體扇出型封裝600a之導電球體670a接合至積體扇出型封裝600。導電球體670a在積體扇出型封裝600a之重分佈線650b與積體扇出型封裝600之積體扇出通孔620之間，且無模製材料635覆蓋。積體扇出型封裝600a之導電球體670a分別與積體扇出型封裝600之積體扇出通孔620大體上對齊，而這些積體扇出型封裝600之積體扇出通孔620分別經由開口O15暴露(查看第51圖)。如此一來，積體扇出型封裝600a可在積體扇出型封裝600上堆疊。在一些實施方式中，在積體扇出型封裝600a中，積體扇出通孔620a分別與導電球體670a大體上對齊。這樣的配置，至少兩個積體扇出型封裝600a可經由上方積體扇出型封裝600a 之導電球體670a及下方積體扇出型封裝600a之暴露的積體扇出通孔620a而堆疊。在一些實施方式中，底部填充物可設置在相鄰積體扇出型封裝之間且圍繞導電球體670a。
在積體扇出型封裝600a黏合至積體扇出型封裝600後，半導體封裝300黏合至上積體扇出型封裝600a。在一些實施方式中，半導體封裝300包括緩衝層320及導電球體330。導電球體330自緩衝層320凸出。另外，半導體封裝300之導電球體330分別與上方積體扇出型封裝600a之積體扇出通孔620a大體上對齊。在這種配置中，半導體封裝300可經由半導體封裝300底側之導電球體330及上積體扇出型封裝600a頂側之積體扇出通孔620a接合至上積體扇出型封裝600a。然而，本揭露之各種實施方式並不限於前述步驟之順序。例如，接合積體扇出型封裝600a以形成堆疊結構，隨後半導體封裝300接合至堆疊結構之頂側。之後，堆疊結構之下側接合至積體扇出型封裝600，也可得到第54圖之封裝結構700。在一些實施方式中，半導體封裝300可以為記憶體裝置，諸如靜態隨機存取記憶體(SRAM)或動態隨機存取記憶體(DRAM)裝置。半導體封裝300可以包括在其內之複數個堆疊記憶體晶粒。此外，半導體封裝300之其他類型也可在積體扇出型封裝600a上，且本揭露之各種實施方式並不限於此。
在前述封裝結構中，由於封裝結構為三維層疊封裝(PoP)結構，積體扇出型封裝及半導體封裝之間之短長度及高頻寬通訊可提升設有封裝結構之系統的效能。此外， 封裝結構可以包括各種半導體裝置及半導體封裝，以便由設計者彈性使用。
根據一些實施方式，封裝結構包括第一介電層、第一半導體裝置、第一重分佈線、第二介電層、第二半導體裝置、第二重分佈線、導電凸塊、第一導電件及第一模製材料。第一半導體裝置在第一介電層上方。第一重分佈線在第一介電層中且電連接至第一半導體裝置。第二介電層在第一半導體裝置上方。第二半導體裝置在第二介電層上方。第二重分佈線在第二介電層中且電連接至第二半導體裝置。第一導電件電連接第一重分佈線與第二重分佈線。第一模製材料模製第一半導體裝置及第一導電件。
在一些實施方式中，第一導電件包括電連接至第二重分佈線之導電凸塊。
在一些實施方式中，第一導電件包括電連接至第一重分佈線之導電通孔。
在一些實施方式中，第一導電件包括電連接至第一重分佈線之被動嵌入件。
在一些實施方式中，第一導電件進一步包括導電凸塊。導電凸塊在被動嵌入件與第一重分佈線之間且電連接被動嵌入件與第一重分佈線。
在一些實施方式中，第一導電件進一步包括導電凸塊。導電凸塊在被動嵌入件與第二重分佈線之間且電連接被動嵌入件與第二重分佈線。
在一些實施方式中，封裝結構進一步包括第二模製材料。第二模製材料模製第二半導體裝置。
在一些實施方式中，封裝結構進一步包括第二導電件。第二導電件在第二模製材料中且電連接至第二重分佈線。
在一些實施方式中，封裝結構進一步包括半導體封裝。半導體封裝在第二模製材料上方且電連接至第二導電件。
在一些實施方式中，封裝結構進一步包括在第一半導體裝置及第一模製材料上方之緩衝層。
在一些實施方式中，封裝結構進一步包括導電凸塊。導電凸塊在第二重分佈線與第一導電件之間且無第一模製材料覆蓋。
在一些實施方式中，第一模製材料具有在第一半導體裝置與第二介電層之間的部分。
根據一些實施方式，封裝結構包括第一介電層、第一半導體裝置、導電件、第二介電層、第二半導體裝置、重分佈線、導電凸塊、第一模製材料及第二模製材料。第一半導體裝置在第一介電層上方。導電件在第一介電層上方。第二介電層在第一介電層、第一半導體裝置及導電件上方。第二半導體裝置在第二介電層上方。重分佈線在第二介電層中且電連接至第二半導體裝置。導電凸塊電連接重分佈線及導電件。第一模製材料模製第一半導體裝置及導電件。第二模製材料模製第二半導體裝置。
在一些實施方式中，導電件包括電連接至重分佈線之導電通孔。
在一些實施方式中，導電件包括電連接至重分佈線之被動嵌入件。
根據一些實施方式，一種形成封裝結構之方法包括形成第一組件，其中第一組件包括第一半導體裝置、電連接至第一半導體裝置之第一重分佈線、及電連接至第一重分佈線之導電件；形成第二組件，其中第二組件包括第二半導體裝置及電連接至第二半導體裝置之第二重分佈線；以及使用導電凸塊將第二組件接合至第一組件上，以便第二重分佈線經由導電凸塊電連接至導電件。
在一些實施方式中，形成第一組件的步驟包括形成第一重分佈線，形成在第一重分佈線上方且電連接至第一重分佈線的導電件，及將第一半導體裝置設置在第一重分佈線上方且電連接至第一重分佈線。
在一些實施方式中，方法進一步包括以模製材料模製第一半導體裝置、導電件、導電凸塊及第二半導體裝置於其內。
在一些實施方式中，形成第一組件的步驟包括在緩衝層上方形成導電件，在緩衝層上方設置第一半導體裝置，以模製材料中模製第一半導體裝置及導電件於其內，及形成在第一半導體裝置及導電件上方且電連接至第一半導體裝置及導電件的第一重分佈線。
在一些實施方式中，方法進一步包括在緩衝層中形成開口以暴露導電件。
以上概述了若干實施方式之特徵，使得本領域普通技術人員可清楚理解本揭露之態樣。本領域技術人員應理解，他們可易於使用本揭露作為設計及更改其他製程及結構以實現相同目標及/或達成本文介紹實施方式之相同優勢的基礎。但是本領域技術人員亦應理解，此種等同結構並不脫離本揭露之精神及範疇，以及他們可以在不脫離本揭露之精神及範疇的情況下對本文進行各種改變、置換及變更。
100:半導體組件
100a:半導體組件
110a:緩衝層
120a:介電層
130a:重分佈線
150a:重分佈線
160a:介電層
170:重分佈線
180:介電層
210:積體扇出通孔
210a:積體扇出通孔
215:導電件
215a:導電件
220:半導體裝置
220a:半導體裝置
240:導電球體
240a:導電球體
250:模製化合物
300:半導體封裝
320:緩衝層
330:導電球體
400:封裝結構
410:積體扇出型封裝
410a:積體扇出型封裝

Claims (10)

  1. 一種封裝結構，包含：一第一介電層；一第一半導體裝置，在該第一介電層上方；一第一重分佈線，在該第一介電層中且電連接至該第一半導體裝置；一第二介電層，在該第一半導體裝置上方；一第二半導體裝置，在該第二介電層上方；一第二重分佈線，在該第二介電層中且電連接至該第二半導體裝置；一第一導電件，電連接該第一重分佈線與該第二重分佈線；一第一模製材料，埋入該第一半導體裝置及該第一導電件，其中該第一模製材料接觸該第一半導體裝置的一頂面，且該第一導電件的一底面在該第一模製材料的一底面上方；一第二模製材料，埋入該第二半導體裝置；一第二導電件，在該第二模製材料中且電連接至該第二重分佈線；一半導體封裝，在該第二模製材料上方且電連接至該第二導電件；以及一緩衝層，直接接觸該第二重分佈線。
  2. 如請求項1所述的封裝結構，其中該第一導電件進一步包括一導電凸塊，該導電凸塊電連接該第一重分佈線。
  3. 如請求項1所述的封裝結構，其中該第一導電件進一步包括一導電凸塊，該導電凸塊電連接該第二重分佈線。
  4. 如請求項1所述的封裝結構，其中該第一導電件的該底面低於該第一模製材料的一頂面。
  5. 一種封裝結構，包含：一第一介電層；一第一半導體裝置，在該第一介電層上方；一導電件，在該第一介電層上方；一第二介電層，在該第一介電層、該第一半導體裝置及該導電件上方；一第二半導體裝置，在該第二介電層上方；一重分佈線，在該第二介電層中且電連接至該第二半導體裝置，其中該導電件包含電連接該重分佈線的一嵌入件，該嵌入件具有朝向該第一半導體裝置的一第一側壁及與該第一側壁相對的一第二側壁；一導電凸塊，電連接該重分佈線及該導電件；一第一模製材料，模製且接觸該嵌入件的該第二側壁、該第一半導體裝置與該導電件；以及 一第二模製材料，模製第二半導體裝置。
  6. 如請求項5所述的封裝結構，其中該導電凸塊在該第一模製材料的頂面上方。
  7. 一種封裝結構的形成方法，包含：形成第一組件，其中形成該第一組件包含：形成一導電件在一緩衝層上方；形成一第一半導體裝置；以及形成一第一重分佈線電連接至該第一半導體裝置；形成一第二組件，其中該第二組件包含一第二半導體裝置與電連接該第二半導體裝置的一第二重分佈線；使用一導電凸塊將該第二組件接合至該第一組件上，使得該第二重分佈線經由該導電凸塊電連接至該導電件；以及將該第二組件接合至該第一組件上後，形成一模製材料於該第一組件與該第二組件之間。
  8. 如請求項7所述的封裝結構的形成方法，更包含：以該模製材料模製該第一半導體裝置、該導電件、該導電凸塊與該第二半導體裝置於其內。
  9. 如請求項7所述的封裝結構的形成方法，其中形成該第一組件更包含：將該第一半導體裝置設置在該緩衝層上方；以該模製材料模製該第一半導體裝置與該導電件；以及形成該第一重分佈線在該第一半導體裝置與該導電件上方。
  10. 如請求項7所述的封裝結構的形成方法，其中將該第二組件接合使得該導電凸塊具有從該緩衝層凸出的一部分。
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