TWI717544B - 使用含硼氣體與氟化氫氣體之原子層蝕刻 - Google Patents

使用含硼氣體與氟化氫氣體之原子層蝕刻 Download PDF

Info

Publication number
TWI717544B
TWI717544B TW106126861A TW106126861A TWI717544B TW I717544 B TWI717544 B TW I717544B TW 106126861 A TW106126861 A TW 106126861A TW 106126861 A TW106126861 A TW 106126861A TW I717544 B TWI717544 B TW I717544B
Authority
TW
Taiwan
Prior art keywords
boron
substrate
ale
gas
atomic layer
Prior art date
Application number
TW106126861A
Other languages
English (en)
Chinese (zh)
Other versions
TW201820459A (zh
Inventor
羅伯特 Ｄ 克拉克
坎達巴拉 Ｎ 泰伯利
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201820459A publication Critical patent/TW201820459A/zh
Application granted granted Critical
Publication of TWI717544B publication Critical patent/TWI717544B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
TW106126861A 2016-08-10 2017-08-09 使用含硼氣體與氟化氫氣體之原子層蝕刻 TWI717544B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662373232P 2016-08-10 2016-08-10
US62/373,232 2016-08-10

Publications (2)

Publication Number Publication Date
TW201820459A TW201820459A (zh) 2018-06-01
TWI717544B true TWI717544B (zh) 2021-02-01

Family

ID=61159322

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106126861A TWI717544B (zh) 2016-08-10 2017-08-09 使用含硼氣體與氟化氫氣體之原子層蝕刻

Country Status (4)

Country Link
US (2) US10283369B2 (enExample)
JP (1) JP6924648B2 (enExample)
KR (1) KR102510736B1 (enExample)
TW (1) TWI717544B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP6679642B2 (ja) * 2018-03-27 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102352038B1 (ko) 2018-09-13 2022-01-17 샌트랄 글래스 컴퍼니 리미티드 실리콘 산화물의 에칭 방법 및 에칭 장치
US11387112B2 (en) 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
JP7336884B2 (ja) * 2018-10-04 2023-09-01 東京エレクトロン株式会社 表面処理方法及び処理システム
KR102448630B1 (ko) * 2019-02-25 2022-09-28 주식회사 아이큐랩 탄화 규소 반도체 공정에서 트렌치 형성 방법
WO2020252097A1 (en) * 2019-06-11 2020-12-17 Applied Materials, Inc. Etching of metal oxides using fluorine and metal halides
CN111168056A (zh) * 2020-01-17 2020-05-19 宁波柔创纳米科技有限公司 一种金属粉末及降低金属粉末含氧量提升抗氧化性的方法
US20230104924A1 (en) * 2020-02-18 2023-04-06 Forge Nano, Inc. Atomic Layer Deposition (ALD) for Multi-Layer Ceramic Capacitors (MLCCs)
JP7096279B2 (ja) * 2020-03-25 2022-07-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
CN114127896A (zh) * 2020-06-30 2022-03-01 株式会社日立高新技术 蚀刻处理方法以及蚀刻处理装置
JP7174016B2 (ja) 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
WO2022050099A1 (ja) * 2020-09-01 2022-03-10 株式会社Adeka エッチング方法
US11488835B2 (en) * 2020-11-20 2022-11-01 Applied Materials, Inc. Systems and methods for tungsten-containing film removal
JP7621876B2 (ja) * 2021-01-26 2025-01-27 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置
US11462414B2 (en) * 2021-03-08 2022-10-04 Tokyo Electron Limited Atomic layer etching of metal oxides
US11631589B2 (en) 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features
WO2023282191A1 (ja) 2021-07-05 2023-01-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2024533108A (ja) * 2021-09-07 2024-09-12 ラム リサーチ コーポレーション 三塩化ホウ素を使用した原子層エッチング
KR102737901B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치
KR102737905B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 촉매 반응 기반 원자층 식각 방법
KR20240146076A (ko) * 2022-02-22 2024-10-07 램 리써치 코포레이션 억제제를 사용하는 원자층 에칭
JPWO2023214521A1 (enExample) 2022-05-02 2023-11-09
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置
WO2024157943A1 (ja) * 2023-01-27 2024-08-02 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331672B1 (en) * 1996-03-01 2001-12-18 Canon Kabushiki Kaisha Photovoltaic cell and method for manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0368732B1 (en) * 1988-11-04 1995-06-28 Fujitsu Limited Process for forming resist mask pattern
US5041362A (en) * 1989-07-06 1991-08-20 Texas Instruments Incorporated Dry developable resist etch chemistry
US7012027B2 (en) * 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
JP5297615B2 (ja) * 2007-09-07 2013-09-25 株式会社日立ハイテクノロジーズ ドライエッチング方法
US20140179106A1 (en) * 2012-12-21 2014-06-26 Lam Research Corporation In-situ metal residue clean
US9773683B2 (en) * 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
JP2018500767A (ja) * 2014-12-18 2018-01-11 ザ リージェンツ オブ ザ ユニバーシティ オブ コロラド，ア ボディー コーポレイトＴＨＥ ＲＥＧＥＮＴＳ ＯＦ ＴＨＥ ＵＮＩＶＥＲＳＩＴＹ ＯＦ ＣＯＬＯＲＡＤＯ，ａ ｂｏｄｙ ｃｏｒｐｏｒａｔｅ 逐次的な自己制御熱反応を使用する原子層エッチング（ａｌｅ）の新規の方法
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9837304B2 (en) * 2015-06-24 2017-12-05 Tokyo Electron Limited Sidewall protection scheme for contact formation
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331672B1 (en) * 1996-03-01 2001-12-18 Canon Kabushiki Kaisha Photovoltaic cell and method for manufacturing the same

Also Published As

Publication number Publication date
KR102510736B1 (ko) 2023-03-15
US10790156B2 (en) 2020-09-29
TW201820459A (zh) 2018-06-01
US20190267249A1 (en) 2019-08-29
JP2018026566A (ja) 2018-02-15
US10283369B2 (en) 2019-05-07
US20180047577A1 (en) 2018-02-15
JP6924648B2 (ja) 2021-08-25
KR20180018413A (ko) 2018-02-21

Similar Documents

Publication Publication Date Title
TWI717544B (zh) 使用含硼氣體與氟化氫氣體之原子層蝕刻
JP2018026566A5 (enExample)
CN110313054B (zh) 自限制原子热蚀刻系统和方法
TW487983B (en) Manufacturing method for semiconductor device
US10438797B2 (en) Method of quasi atomic layer etching
TWI759616B (zh) 3d nand蝕刻
US10381236B2 (en) Method of processing target object
US9911607B2 (en) Method of processing target object
US10553446B2 (en) Method of processing target object
CN109219866B (zh) 蚀刻方法
US10707088B2 (en) Method of processing target object
US10692726B2 (en) Method for processing workpiece
JP2010225899A (ja) 半導体装置の製造方法
JP2016076621A5 (enExample)
JP2005050468A5 (enExample)
JP2007531309A5 (enExample)
JP2021028959A5 (enExample)
JP2011071279A (ja) 半導体装置の製造方法
JP4805569B2 (ja) 半導体素子製造装備の洗浄方法
CN102779748B (zh) 半导体器件的制造方法
JPWO2019190783A5 (enExample)
CN115023795A (zh) 合金膜蚀刻
CN117790295A (zh) 用于形成心轴和间隔物的方法、相关结构和系统
TW202033813A (zh) 形成含鎳膜之方法