TWI710669B - 半導體裝置之製造方法及半導體製造裝置 - Google Patents

半導體裝置之製造方法及半導體製造裝置 Download PDF

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Publication number
TWI710669B
TWI710669B TW106119394A TW106119394A TWI710669B TW I710669 B TWI710669 B TW I710669B TW 106119394 A TW106119394 A TW 106119394A TW 106119394 A TW106119394 A TW 106119394A TW I710669 B TWI710669 B TW I710669B
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TW
Taiwan
Prior art keywords
gas
film
silicon
roughness
halogen
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TW106119394A
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English (en)
Chinese (zh)
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TW201802295A (zh
Inventor
岡田充弘
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日商東京威力科創股份有限公司
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    • H10P50/244—
    • H10P14/3411—
    • H10W20/057—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H10P14/24—
    • H10P14/27—
    • H10P14/271—
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/6309—
    • H10P14/69215—
    • H10P50/242—
    • H10P50/268—
    • H10P72/0421—
    • H10W20/076—
    • H10W20/085—
    • H10W20/088—
    • H10P72/0434—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma & Fusion (AREA)
TW106119394A 2016-06-20 2017-06-12 半導體裝置之製造方法及半導體製造裝置 TWI710669B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-121874 2016-06-20
JP2016121874A JP6693292B2 (ja) 2016-06-20 2016-06-20 半導体装置の製造方法及び半導体製造装置

Publications (2)

Publication Number Publication Date
TW201802295A TW201802295A (zh) 2018-01-16
TWI710669B true TWI710669B (zh) 2020-11-21

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TW106119394A TWI710669B (zh) 2016-06-20 2017-06-12 半導體裝置之製造方法及半導體製造裝置

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Country Link
US (1) US10529559B2 (enExample)
JP (1) JP6693292B2 (enExample)
KR (1) KR102199233B1 (enExample)
CN (1) CN107527791B (enExample)
TW (1) TWI710669B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510589B2 (en) * 2017-07-12 2019-12-17 Applied Materials, Inc. Cyclic conformal deposition/anneal/etch for Si gapfill
US11056347B2 (en) 2019-05-28 2021-07-06 Tokyo Electron Limited Method for dry etching compound materials
JP7601503B2 (ja) * 2020-12-16 2024-12-17 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置
JP7605565B2 (ja) 2021-01-26 2024-12-24 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置
JP7304905B2 (ja) * 2021-01-29 2023-07-07 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN115483097B (zh) * 2021-05-31 2025-10-21 东京毅力科创株式会社 基板处理方法和基板处理装置
JP7626546B2 (ja) * 2021-06-01 2025-02-04 東京エレクトロン株式会社 半導体装置の製造方法及び基板処理装置
KR102837958B1 (ko) * 2021-10-27 2025-07-25 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 시스템
JP2025033278A (ja) 2023-08-29 2025-03-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3093445B2 (ja) 1991-05-20 2000-10-03 東京エレクトロン株式会社 プラズマエッチング方法
US5573973A (en) * 1993-03-19 1996-11-12 National Semiconductor Corporation Integrated circuit having a diamond thin film trench arrangement as a component thereof and method
JP2000294626A (ja) * 1999-04-07 2000-10-20 Sony Corp 半導体装置の製造方法
US6774045B1 (en) * 2001-07-11 2004-08-10 Lam Research Corporation Residual halogen reduction with microwave stripper
JP3093445U (ja) 2002-10-16 2003-05-09 益添 朱 ローラースケートの収納輪セット構造
US7205240B2 (en) * 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
JP4488999B2 (ja) * 2005-10-07 2010-06-23 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP2012004542A (ja) * 2010-05-20 2012-01-05 Tokyo Electron Ltd シリコン膜の形成方法およびその形成装置
JP5925704B2 (ja) * 2013-01-17 2016-05-25 東京エレクトロン株式会社 シリコン膜の形成方法およびその形成装置
JP6092040B2 (ja) * 2013-08-02 2017-03-08 東京エレクトロン株式会社 シリコン膜の形成方法およびその形成装置
JP6150724B2 (ja) * 2013-12-27 2017-06-21 東京エレクトロン株式会社 凹部を充填する方法

Also Published As

Publication number Publication date
US10529559B2 (en) 2020-01-07
KR20170142926A (ko) 2017-12-28
JP6693292B2 (ja) 2020-05-13
TW201802295A (zh) 2018-01-16
US20170365465A1 (en) 2017-12-21
CN107527791A (zh) 2017-12-29
KR102199233B1 (ko) 2021-01-06
JP2017228580A (ja) 2017-12-28
CN107527791B (zh) 2021-10-26

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