TWI704701B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
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- TWI704701B TWI704701B TW108105196A TW108105196A TWI704701B TW I704701 B TWI704701 B TW I704701B TW 108105196 A TW108105196 A TW 108105196A TW 108105196 A TW108105196 A TW 108105196A TW I704701 B TWI704701 B TW I704701B
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- emitting diode
- reflective structure
- light emitting
- opening
- light
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 93
- 230000008569 process Effects 0.000 claims description 65
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 238000002161 passivation Methods 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 27
- 238000000059 patterning Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 185
- 239000010936 titanium Substances 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 239000011295 pitch Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920002577 polybenzoxazole Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- -1 silicon nitride Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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Abstract
實施例提供一種製造半導體裝置的方法,包含:將發光二
極體連接至基底;使用感光性包封體包封發光二極體;形成穿過感光性包封體鄰近發光二極體的第一開口;以及於第一開口中形成導通孔。
Description
本發明的實施例是有關於一種半導體裝置及其製造方法。
歸因於多種電子組件(例如電晶體、二極體、電阻器、電容器等)的整合密度的持續改進,半導體產業經歷快速發展。主要地,整合密度的改進源自於最小特徵大小的反覆減小,其允許將更多組件整合至給定區域中。近年來,在愈來愈多的應用中,光學特徵已經與半導體裝置整合,特別是歸因於對電話、平板電腦以及其他攜帶型裝置中的攝影機的需求上升。
本發明的一實施例提供一種製造半導體裝置的方法,包括:將發光二極體連接至基底;使用感光性包封體包封所述發光二極體;形成穿過所述感光性包封體,所述的第一開口鄰近所述發光二極體;以及於所述第一開口中形成導通孔。
本發明的一實施例提供一種製造半導體裝置的方法,包
括:將第一結構連接至內連線,所述第一結構包括自載體基底延伸的發光二極體,所述發光二極體的第一端子連接至所述內連線;移除所述載體基底以暴露所述發光二極體;使用感光性包封體包封所述發光二極體;在包封所述發光二極體之後,形成延伸穿過所述感光性包封體的第一導通孔以接觸所述內連線;以及形成將所述發光二極體的第二端子連接至所述第一導通孔的導線。
本發明的一實施例提供一種半導體裝置,包括:內連線;發光二極體,連接至所述內連線;感光性包封體,包圍所述發光二極體;第一導通孔,延伸穿過所述感光性包封體,所述第一導通孔電連接至所述內連線,所述第一導通孔包括晶種層上的導電材料,所述晶種層安置於所述導電材料與所述內連線之間,所述晶種層進一步安置於所述導電材料與所述感光性包封體之間;以及導線,將所述發光二極體連接至所述第一導通孔。
100:第一結構
102:載體基底
104:發光二極體
106:第一反射性結構
108:發光半導體區域
108A:透明部分
108B:不透明部分
110:第二反射性結構
112、210:接觸墊
114、206、304、342:鈍化層
116:凸塊下金屬
120:凹槽
124:間隔物
200:第二結構
202:半導體基底
204:內連線結構
204A、204B:墊
204C:對準標記
208、308、316A、316B、336:開口
300:雷射裝置
300A:發光區域
300B:連接區域
300C:對準區域
302:導電連接件
306:感光性包封體
312:罩幕層
314、334:光阻
324:晶種層
326:導電材料
328A、328B、328C:導通孔
338:導線
340:測試墊
400:深度感測器
402:偵測器
404:目標
H1、H2:高度
H3:組合高度
P1:間距
T1、T2、T3、T4:厚度
W1、W4、W6:下部寬度
W2、W3、W5:上部寬度
當結合附圖閱讀以下詳細描述時會最佳地理解本揭露內容的態樣。應注意,根據行業中的標準慣例,各種特徵未按比例繪製。事實上,出於論述清楚起見,可任意地增大或減小各種特徵的尺寸。
圖1至圖18示出根據一些實施例的用於形成雷射裝置的製程的各種橫截面視圖。
圖19示出根據一些實施例的雷射裝置的操作。
圖20至圖22示出根據一些其他實施例的用於形成雷射裝置的製程的各種橫截面視圖。
以下揭露內容提供用於實施本發明的不同特徵的諸多不同實施例或實例。下文描述組件及佈置的特定實例以簡化本揭露內容。當然,此等特定實例僅為實例且不意欲為限制性的。舉例而言,在以下描述中,第一特徵在第二特徵上方或第二特徵上形成可包含第一特徵與第二特徵直接接觸地形成的實施例,且亦可包含額外特徵可在第一特徵與第二特徵之間形成,以使得第一特徵與第二特徵可不直接接觸的實施例。另外,本揭露內容可在各種實例中重複附圖標號及/或字母。此重複是出於簡單及清楚的目的,且本身並不指示所論述的各種實施例及/或組態之間的關係。
此外,為易於描述,可在本文中使用諸如「在...下面」、「在...下方」、「下部」、「在...上方」、「上部」以及類似者的空間相對術語來描述如諸圖中所示的一個構件或特徵與另一構件或特徵的關係。除諸圖中所描繪的定向以外,空間相對術語意欲涵蓋裝置在使用或操作中的不同定向。設備可以其他方式定向(旋轉90度或處於其他定向)且本文中所使用的空間相對描述詞可同樣相應地進行解譯。
根據一些實施例,導通孔形成於多個發光二極體之間。頂部結構附接至底部結構。底部結構可包括例如內連線結構,且包含形成於其上的導電連接件。頂部結構包括基底,所述基底具有形成於其上的多個發光二極體(例如以柵格圖案(grid pattern)式排列)。頂部結構的各別發光二極體連接至底部結構的各別導電連接件。藉由例如蝕刻製程來移除頂部結構的載體。諸如低溫聚醯亞胺
(low temperature polyimide;LTPI)的感光性包封體圍繞發光二極體形成且於發光二極體上形成。藉由蝕刻製程在感光性包封體中形成開口,暴露底部結構的下伏連接墊。使用蝕刻製程而非藉由使感光性包封體顯影來形成開口可允許形成具有較精細間距(pitch)的開口。導通孔隨後形成於開口中,連接至底部結構的下伏連接墊。隨後可形成導線以將導通孔連接至發光二極體。藉由在附接發光二極體之後形成導通孔,可減小導通孔塌陷的幾率,且導通孔可形成為具有較高縱橫比(aspect ratio)的較精細間距。
圖1至圖3示出根據一些實施例的用於形成第一結構100的製程的各種橫截面視圖。第一結構100包含載體基底(carrier substrate)102,所述載體基底具有形成於其上的多個發光二極體104(見圖3)。
在圖1中,提供載體基底102。載體基底102可為半導體基底,諸如塊狀半導體、絕緣層上半導體(semiconductor-on-insulator;SOI)基底或類似者,所述半導體基底可經摻雜(例如藉由p型或n型摻雜劑)或未經摻雜。載體基底102可為晶圓,諸如矽晶圓。一般而言,SOI基底為形成於絕緣層上的半導體材料層。絕緣層可為例如內埋氧化物(buried oxide;BOX)層、氧化矽層或類似者。絕緣層設置於基底(一般為矽基底或玻璃基底)上。亦可使用其他基底,諸如多層基底或梯度基底(gradient substrate)。在一些實施例中,載體基底102的半導體材料可包含矽;鍺;化合物半導體,包含碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦及/或銻化銦;合金半導體,包含SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及/或GaInAsP;或其組合。在特定實施例中,載體基底102
為GaAs基底。
此外,第一反射性結構106於載體基底102上形成。第一反射性結構106包含多個材料層,諸如介電材料或半導電材料。所述層可經摻雜或未經摻雜。所述層可藉由合適的沈積製程(諸如化學氣相沈積(chemical vapor deposition;CVD))來沈積,或可藉由合適的磊晶製程來生長。第一反射性結構106可為分佈式布拉格反射器(distributed Bragg reflector),其使用具有不同折射率的交替材料層來反射光。在一些實施例中,第一反射性結構106包括載體基底102(例如GaAs)的交替的經摻雜材料層及未經摻雜材料層,其中經摻雜層具有與未經摻雜層不同的折射率。摻雜劑可為允許經摻雜層具有與未經摻雜層不同的折射率的任何摻雜劑。在一些實施例中,摻雜劑為諸如C的p型摻雜劑。在一些實施例中,第一反射性結構106的經摻雜層具有介於自約1017個原子/立方公分(cm3)至約1018個原子/cm3的範圍內的摻雜劑濃度。第一反射性結構106可因此於所得發光二極體104(見圖3)中形成p型反射區域。第一反射性結構106可具有任何寬度。在一些實施例中,第一反射性結構106具有14微米(μm)的寬度。
此外,發光半導體區域108於第一反射性結構106上形成。發光半導體區域108亦包括載體基底102(例如GaAs)的經摻雜材料層。發光半導體接面108具有p型區域及n型區域,且包括在操作期間以單一諧振頻率產生雷射的P-N接面。p型區域可經摻雜有p型摻雜劑,諸如硼、鋁、鎵、銦以及類似者。n型區域可經摻雜有n型摻雜劑,諸如磷、砷以及類似者。在一些實施例中,p型區域在n型區域上方形成。發光半導體區域108的n型區
域可連接至第一反射性結構106,以使得光朝向第一反射性結構106發射。
此外,第二反射性結構110於發光半導體區域108上形成。發光半導體區域108的p型區域可連接至第二反射性結構110。第二反射性結構110包含多個材料層,諸如介電材料或半導電材料。所述層可經摻雜或未經摻雜。所述層可藉由合適的沈積製程(諸如化學氣相沈積)來沈積,或可藉由合適的磊晶製程來生長。第二反射性結構110可為分佈式布拉格反射器,其使用具有不同折射率的交替材料層來反射光。在一些實施例中,第二反射性結構110包括載體基底102(例如GaAs)的交替的經摻雜材料層及未經摻雜材料層,其中經摻雜層具有與未經摻雜層不同的折射率。摻雜劑可為允許經摻雜層具有與未經摻雜層不同的折射率的任何摻雜劑。在一些實施例中,摻雜劑為諸如Si的n型摻雜劑。在一些實施例中,第二反射性結構110的經摻雜層具有介於自約1017個原子/cm3至約1018個原子/cm3的範圍內的摻雜劑濃度。第二反射性結構110可因此於所得發光二極體104(見圖3)中形成n型反射區域。第二反射性結構110的摻雜劑可為與第一反射性結構106的摻雜劑不同的摻雜劑。第二反射性結構110可具有任何寬度。在一些實施例中,第二反射性結構110具有13微米的寬度。
反射性結構106及反射性結構110形成諧振腔,以幫助增強來自發光半導體區域108的光的強度。反射性結構106與反射性結構110具有不同反射率,例如反射性結構106與反射性結構110的折射率不同。在一些實施例中,第一反射性結構106形成為具有比第二反射性結構110更低的反射率,以允許自發光半
導體區域108發射雷射束。可藉由調節反射性結構106及反射性結構110的總高度及總摻雜量來改變反射性結構106及反射性結構110的折射率。舉例而言,第一反射性結構106的高度H1可小於第二反射性結構110的高度H2。在一些實施例中,高度H1介於自約2微米至約4微米(諸如約3微米)的範圍內,且高度H2介於自約5微米至約7微米(諸如約6微米)的範圍內。
在圖2中,接觸墊112於第二反射性結構110上形成。接觸墊112實體連接且電連接至第二反射性結構110,所述第二反射性結構110自身實體連接且電連接至發光半導體區域108。接觸墊112因而連接至所得發光二極體104(見圖3)的n型側。作為形成接觸墊112的實例,晶種層在第二反射性結構110上方形成。在一些實施例中,晶種層為金屬層,其可為單個層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及鈦層上方的銅層。可使用例如物理氣相沈積(physical vapor deposition;PVD)或類似製程形成晶種層。隨後於晶種層上形成光阻並使光阻圖案化。光阻可藉由旋轉塗佈或類似製程而形成,且可暴露於光以用於圖案化。光阻的圖案與接觸墊112相對應。圖案化形成穿過光阻的開口以暴露晶種層。導電材料形成於光阻的開口中及晶種層的經暴露部分上。導電材料可藉由諸如電鍍或無電式鍍覆(electroless plating)的鍍覆或類似製程而形成。導電材料可包括金屬,如銅、鈦、鎢、鋁或類似者。隨後,將未在其上形成導電材料的光阻及晶種層的部分移除。可藉由諸如使用氧電漿或類似者的可接受的灰化(ashing)或剝離(stripping)製程來移除光阻。一旦移除了光阻,則諸如藉由使用可接受蝕刻製程(諸如
藉由濕式蝕刻或乾式蝕刻)來移除晶種層的經暴露部分。晶種層及導電材料的剩餘部分形成接觸墊112。
此外,鈍化層114於接觸墊112及第二反射性結構110上形成。鈍化層114在後續處理期間保護第二反射性結構110。鈍化層114可由無機材料形成,且可藉由諸如化學氣相沈積或類似製程的沈積製程而形成,所述無機材料可為諸如氮化矽的氮化物、諸如氧化矽的氧化物,或類似者。鈍化層114亦可由聚合物形成,且可藉由旋轉塗佈或類似製程形成,所述聚合物可為諸如聚苯并噁唑(polybenzoxazole;PBO)、聚醯亞胺、苯環丁烷(benzocyclobutene;BCB)或類似者的感光性材料。
此外,凸塊下金屬(underbump metallurgies;UBMs)116於鈍化層114的開口上形成。作為形成UBM 116的實例,鈍化層114經圖案化以具有暴露出接觸墊112的開口。圖案化可藉由可接受的製程來進行,諸如當鈍化層114為感光性材料時藉由使鈍化層114暴露於光或藉由使用例如非等向性蝕刻的蝕刻來進行。若鈍化層114為感光性材料,則可在暴露之後使鈍化層114顯影。晶種層於鈍化層114上方及開口中形成。在一些實施例中,晶種層為金屬層,其可為單個層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及鈦層上方的銅層。可使用例如物理氣相沈積或類似製程形成晶種層。隨後於晶種層上形成光阻並使光阻圖案化。光阻可藉由旋轉塗佈或類似製程而形成,且可暴露於光以用於圖案化。光阻的圖案與UBM 116相對應。圖案化形成穿過光阻的開口以暴露晶種層。導電材料於光阻的開口中及晶種層的經暴露部分上形成。導電材料可藉由諸如電鍍或
無電式鍍覆的鍍覆或類似製程而形成。導電材料可包括金屬,如銅、鈦、鎢、鋁或類似者。隨後,將未在其上形成導電材料的光阻及晶種層的部分移除。可藉由諸如使用氧電漿或類似者的可接受的灰化或剝離製程來移除光阻。一旦移除了光阻,則諸如藉由使用可接受蝕刻製程(諸如藉由濕式蝕刻或乾式蝕刻)來移除晶種層的經暴露部分。晶種層及導電材料的剩餘部分形成UBM 116。
在圖3中,凹槽120形成為延伸至載體基底102中。凹槽120延伸穿過鈍化層114、第二反射性結構110、發光半導體區域108以及第一反射性結構106,其中於凹槽120之間的剩餘部分形成發光二極體104。凹槽120可藉由使用可接受蝕刻製程而形成,例如非等向性蝕刻。
發光二極體104以間距P1間隔開,所述間距由凹槽120的寬度判定。在一些實施例中,間距P1介於自約4微米至約7微米的範圍內。此外,發光二極體104形成為具有楔形形狀。第一反射性結構106的下部部分具有下部寬度W1,且第二反射性結構110的上部部分具有上部寬度W2。在一些實施例中,下部寬度W1介於自約13微米至約15微米(諸如約14微米)的範圍內,且上部寬度W2介於自12微米至約14微米的範圍內。
此外,不透明部分108B於發光二極體104的發光半導體區域108中形成。在俯視視角中,不透明部分108B圍繞發光半導體區域108的透明部分108A的周界延伸。不透明部分108B實質上阻擋或吸收來自發光半導體區域108的光,以使得所述光不以側向方向(例如以平行於載體基底102的主表面的方向)自發光二極體104發射。不透明部分108B包括發光半導體區域108的氧
化材料,且可藉由氧化製程而形成,所述氧化製程諸如在含氧環境中執行的快速熱氧化(rapid thermal oxidation;RTO)製程、化學氧化製程、快速熱退火(rapid thermal anneal;RTA)或類似製程。發光半導體區域108的剩餘透明部分108A可在氧化期間由例如光阻遮蔽。
此外,保護性間隔物124於發光二極體104的側上形成。保護性間隔物124可由諸如氮化矽、氧化矽、SiCN、其組合或類似者的介電材料形成。保護性間隔物124可藉由保形沈積(conformal deposition)繼之以非等向性蝕刻而形成。
圖4示出根據一些實施例的第二結構200的橫截面視圖。第二結構200可為諸如積體電路、插入件或類似者的裝置。第二結構200包含半導體基底202,其中諸如電晶體、二極體、電容器、電阻器等元件於半導體基底202中及/或半導體基底202上形成。元件可藉由內連線結構204內連以形成積體電路,所述內連線結構204由例如半導體基底上的一或多個介電層中的金屬化圖案(metallization pattern)形成。內連線結構204包含墊204A及墊204B,所述墊可分別用於耦接至發光二極體104及外部連接。內連線結構204更包含對準標記204C。鈍化層206於內連線結構204上方形成以保護所述結構。鈍化層206可由一或多種合適的介電材料製成,諸如氧化矽;氮化矽;低k介電質,諸如摻碳氧化物;極低k介電質,諸如多孔摻碳二氧化矽;聚合物,諸如聚醯亞胺;阻焊劑;聚苯并噁唑(PBO);苯環丁烷(BCB);模塑化合物;類似者或其組合。鈍化層206經圖案化以具有暴露出對準標記204C的開口208。經暴露對準標記204C用於在後續處理期間精
確定位。第二結構200更包括諸如鋁或銅的墊或柱的接觸墊210,所述接觸墊進行外部連接。接觸墊210位於可被稱為第二結構200的各別主動側的物件上,且可藉由例如微影、蝕刻以及鍍覆製程而形成為延伸穿過鈍化層206。
圖5至圖18示出根據一些實施例的用於形成雷射裝置300的製程的各種橫截面視圖。雷射裝置300可於進一步處理中經封裝以形成例如影像感測器、光纖網路裝置或類似者。所得裝置可為諸如系統晶片(system-on-chip;SoC)的積體電路裝置的部分。
在圖5中,第一結構100連接至第二結構200。第一結構100的發光二極體104連接至第二結構200的接觸墊210。導電連接件302可形成為將發光二極體104的接觸墊112與對應的接觸墊210相連接。導電連接件302可由導電材料形成,所述導電材料諸如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似者或其組合。在一些實施例中,導電連接件302為焊料連接。在一些實施例中,導電連接件302藉由以下操作形成:經由諸如蒸鍍、電鍍、列印、焊料轉移、植球或類似方法的此類常用方法於UBM 116或接觸墊210上初始地形成焊料層。一旦已於UBM 116或接觸墊210上形成焊料層,則將接觸墊210與UBM 116實體地接觸,且可執行回焊以便將材料塑形為所需凸塊形狀。在附接發光二極體104之後,發光二極體104、接觸墊210以及導電連接件302具有組合高度H3。在一些實施例中,組合高度H3介於自約13微米至約15微米(諸如約14微米)的範圍內。
當第一結構100連接至第二結構200時,發光二極體104的第二反射性結構110(例如n型側或陰極)面朝第二結構200,
且發光二極體104的第一反射性結構106(例如p型側或陽極)面朝第一結構100。如上文所指出,第一反射性結構106具有比第二反射性結構110更低的反射率。如此,自發光半導體區域108產生的雷射束由第二反射性結構110反射。所反射雷射束中的一些進一步由第一反射性結構106反射,且一些透射穿過第一反射性結構106。
在圖6中,移除載體基底102,留下發光二極體104。載體基底102可藉由蝕刻製程移除,所述蝕刻製程諸如對載體基底102(例如GaAs)的材料具有選擇性的乾式蝕刻。在移除之後,發光二極體104保持在雷射裝置300的發光區域300A中。雷射裝置300更包含連接區域300B及對準區域300C。如進一步所論述,導通孔於區域300A、區域300B以及區域300C中的每一者中形成。
在圖7中,鈍化層304於發光二極體104及鈍化層206上方形成。鈍化層304亦沿接觸墊210及導電連接件302的側延伸且延伸於開口208中。鈍化層304可包括氧化矽、氮化矽或類似者,且可藉由諸如化學氣相沈積的沈積製程而形成。在一些實施例中,鈍化層304由氧化物(諸如氧化矽)形成。鈍化層304形成至厚度T1。在一些實施例中,厚度T1介於自約0.05微米至約0.1微米的範圍內。
此外,感光性包封體306於鈍化層304上方形成。感光性包封體可由例如LTPI形成,且可藉由諸如旋轉塗佈的塗佈製程而形成。LTPI可允許比氧化物更佳的間隙填充,且可有助於避免空隙的形成。感光性包封體306形成至厚度T2,所述厚度大於鈍化層304的厚度T1。在一些實施例中,厚度T2介於自約14微米
至約16微米的範圍內。感光性包封體306包圍且內埋發光二極體104。感光性包封體306在發光二極體104上方的部分具有厚度T3。在一些實施例中,厚度T3介於自約2微米至約3微米的範圍內。
在圖8中,執行平坦化製程以使感光性包封體306平坦化及薄化。特別是,感光性包封體306在發光二極體104上方的量減小。平坦化製程可為例如研磨(grinding)製程、化學機械研磨(chemical-mechanical polish;CMP)製程或類似製程。在平坦化及薄化之後,感光性包封體306在發光二極體104上方的部分具有經減小的厚度T4,所述厚度小於厚度T3。在一些實施例中,經減小的厚度T4介於自約1微米至約2微米(諸如約1微米)的範圍內。
此外,開口308在對準標記204C上方於對準區域300C中形成。開口308可藉由微影製程形成。舉例而言,可使感光性包封體306暴露於光以用於圖案化,且經顯影以形成開口308。在一些實施例中,開口308暴露出鈍化層304在對準標記204C上方的部分。在一些實施例中,開口308延伸穿過鈍化層304以暴露對準標記204C。
在圖9中,罩幕層312於感光性包封體306上形成。罩幕層312可由諸如Ti、Cu、TiW、TaN、TiN、其組合或其多層的金屬或含金屬材料形成,且可稱作硬質罩幕層。罩幕層312可藉由諸如物理氣相沈積、化學氣相沈積或類似製程的沈積製程而形成。罩幕層312亦可延伸至開口308中。
此外,光阻314於罩幕層312上形成。光阻314可為單
層光阻、三層光阻或類似者,且直接形成於罩幕層312上方(例如接觸罩幕層312)。光阻314可藉由旋轉塗佈或類似製程而形成,且可暴露於光以用於圖案化。在一些實施例中,光阻314包含底部抗反射塗層(bottom anti-reflective coating;BARC)或吸收層,以使得僅光阻314暴露於光,且感光性包封體306並不暴露於光或顯影。圖案化形成穿過光阻314的開口以暴露罩幕層312。
在圖10中,藉由以下操作來使感光性包封體306圖案化:將光阻314的圖案轉印至罩幕層312,且隨後將罩幕層312的圖案轉印至感光性包封體306。可藉由使用圖案化光阻314作為蝕刻罩幕,並藉由可接受蝕刻製程來使罩幕層312圖案化,諸如濕式蝕刻、乾式蝕刻或其組合。可隨後藉由可接受蝕刻製程來使感光性包封體306圖案化,所述可接受蝕刻製程諸如使用圖案化罩幕層312作為蝕刻罩幕的乾式蝕刻。在一些實施例中,乾式蝕刻為電漿蝕刻,其可使用蝕刻劑諸如CF4氣體在O2環境下來執行。圖案化形成穿過感光性包封體306的開口316A及開口316B,以分別暴露內連線結構204的墊204A及墊204B。開口316A與開口316B可具有不同大小。開口316A具有上部寬度W3及下部寬度W4。在一些實施例中,上部寬度W3介於自約3微米至約5微米(諸如約3微米)的範圍內,且下部寬度W4介於自約2微米至約4微米的範圍內。開口316B具有上部寬度W5及下部寬度W6。上部寬度W5大於上部寬度W3,且下部寬度W6大於下部寬度W4。在一些實施例中,上部寬度W5介於自約70微米至約90微米的範圍內,且下部寬度W6介於自約50微米至約70微米(諸如約50微米)的範圍內。一旦完成對感光性包封體306的圖案化,則可藉
由例如蝕刻製程、灰化製程、其組合或類似製程來移除罩幕層312及光阻314的剩餘部分。
雖然感光性包封體306自身為感光性的,但其仍藉由使用光阻314及罩幕層312的微影及蝕刻製程來圖案化。藉由微影及蝕刻製程來形成開口316A及開口316B可允許開口316A及開口316B較小,且比對感光性包封體306曝光及顯影來圖案化所形成的開口(諸如開口308)具有更精細的間距。
在圖11中,晶種層324於感光性包封體306上方及開口308、開口316A以及開口316B中形成。在一些實施例中,晶種層324為金屬層,其可為單個層或包含由不同材料形成的多個子層的複合層。在一些實施例中,晶種層324包括鈦層以及鈦層上方的銅層。可使用例如物理氣相沈積或類似製程來形成晶種層324。
在圖12中,導電材料326於晶種層324上及開口308、開口316A以及開口316B中形成。導電材料326可包括金屬,諸如銅、鈦、鎢、鋁或類似者。導電材料326可藉由諸如電鍍或無電式鍍覆的鍍覆或類似製程而形成。
在圖13中,執行平坦化製程以使導電材料326及感光性包封體306平坦化。平坦化製程可為例如研磨製程、CMP製程或類似製程。導電材料326及晶種層324的剩餘部分分別於開口316A、開口316B以及開口308中形成導通孔328A、導通孔328B以及導通孔328C。導通孔328A、導通孔328B分別實體連接且電連接至墊204A及墊204B。視情況,導通孔328C可連接至對準標記204C。在對準標記204C並不由開口308暴露的實施例中,導通孔328C可將用於處理對準的非功能性通孔電隔離。
在圖14中,光阻334於感光性包封體306及導通孔328A、導通孔328B以及導通孔328C上形成。光阻334可為單層光阻、三層光阻或類似者,可藉由旋轉塗佈或類似製程而形成,且可暴露於光以用於圖案化。在一些實施例中,光阻334包含底部抗反射塗層或吸收層,以使得僅光阻334暴露於光,且感光性包封體306並不暴露於光或顯影。圖案化形成穿過光阻334的開口以暴露感光性包封體306的部分。
在圖15中,藉由以下操作來使鈍化層304圖案化:將光阻334的圖案轉印至感光性包封體306,且隨後將感光性包封體306的圖案轉印至鈍化層304。可藉由可接受蝕刻製程來使感光性包封體306圖案化,所述可接受蝕刻製程諸如使用光阻334作為蝕刻罩幕的乾式蝕刻。在一些實施例中,乾式蝕刻為電漿氧化物蝕刻。可隨後藉由可接受蝕刻製程來使鈍化層304圖案化,所述可接受蝕刻製程諸如使用感光性包封體306作為蝕刻罩幕的濕式蝕刻。圖案化形成穿過鈍化層304的開口336以暴露發光二極體104的第一反射性結構106。可藉由諸如使用氧電漿或類似者的可接受灰化或剝離製程來移除光阻334。藉由微影及蝕刻製程來形成開口336可允許開口336較小,且比對感光性包封體306曝光及顯影來圖案化所形成的開口(諸如開口308)具有更精細的間距。
在圖16中,導線338於開口336中形成,藉此形成發光二極體104的第一反射性結構106的觸點。晶種層於感光性包封體306上方及開口336中形成。在一些實施例中,晶種層為金屬層,其可為單個層或包括由不同材料形成的多個子層的複合層。在一些實施例中,晶種層包括鈦層及鈦層上方的銅層。可使用例如物
理氣相沈積或類似製程形成晶種層。隨後於晶種層上形成光阻並使光阻圖案化。光阻可藉由旋轉塗佈或類似製程而形成,且可暴露於光以用於圖案化。光阻的圖案與導線338相對應。圖案化形成穿過光阻的開口以暴露晶種層。導電材料於光阻的開口中及晶種層的經暴露部分上形成。導電材料可藉由諸如電鍍或無電式鍍覆的鍍覆或類似製程而形成。導電材料可包括金屬,如銅、鈦、鎢、鋁或類似者。隨後,將未在其上形成導電材料的光阻及晶種層的部分移除。可藉由可接受灰化或剝離製程來移除光阻,諸如使用氧電漿或類似者。一旦移除了光阻,則諸如藉由使用可接受蝕刻製程(諸如藉由濕式蝕刻或乾式蝕刻)來移除晶種層的經暴露部分。晶種層及導電材料的剩餘部分形成導線338。
除成為第一反射性結構106的觸點以外,導線338亦將發光二極體104連接至導通孔328A。在形成之後,內連線結構204經由導電連接件302電連接至第二反射性結構110,且內連線結構204經由導線338及導通孔328A電連接至第一反射性結構106。
此外,測試墊340於導通孔328B上形成。測試墊340可用於雷射裝置300的後續測試。在一些實施例中,可在用於製造雷射裝置300的製程的中間階段處執行測試,且僅已知良好裝置(known good devices;KGDs)可用於進一步處理。測試墊340經由導通孔328B電連接至內連線結構204。
在圖17中,鈍化層342於導線338、測試墊340以及感光性包封體306上方形成。鈍化層342可包括氧化矽、氮化矽或類似者,且可藉由諸如化學氣相沈積的沈積製程而形成。在一些實施例中,鈍化層342由氮化物(諸如氮化矽)形成。
在圖18中,鈍化層342經圖案化,其中鈍化層342的剩餘部分覆蓋導線338。因此,可暴露導通孔328B及導通孔328C。可於導通孔328B的成對外部連接。在外部連接形成之前,可(或可不)移除測試墊340。舉例而言,可在裝置測試之後及外部連接形成之前移除測試墊340。在一些實施例中,對導通孔328B的外部連接為線接合(wire bond)連接。在一些實施例中,未形成對導通孔328C的外部連接,且導通孔328C於最終雷射裝置300中保持電隔離。
圖19示出根據一些實施例的雷射裝置300的操作。雷射裝置300可用作深度感測器400的雷射束源。雷射束可由雷射裝置300以脈衝形式產生,且可在經目標404反射之後由偵測器402接收。雷射束的往返時間可經量測且用以計算深度感測器400與目標404之間的距離。偵測器402可為例如CMOS影像感測器(例如光二極體)。在一些實施例中,偵測器402在與雷射裝置300相同的基底上形成。舉例而言,偵測器402可於第二結構200(見圖4)的半導體基底202中形成。
圖20至圖22示出根據一些其他實施例的用於形成第一結構100的製程的各種橫截面視圖。在此實施例中,罩幕層312並不與光阻314一起移除,而是在形成導電材料326之後移除。在圖20中,晶種層324直接於罩幕層312上及開口308、開口316A以及開口316B中形成。在圖21中,導電材料326於晶種層324上及開口308、開口316A以及開口316B中形成。在圖22中,執行平坦化製程以使導電材料326及感光性包封體306平坦化。藉由平坦化製程來移除晶種層324及罩幕層312上覆感光性包封體
306的部分。所得導通孔328C藉由罩幕層312電隔離。
實施例可達成優點。藉由在附接發光二極體104之後形成導通孔328A、導通孔328B以及導通孔328C,可減小導通孔塌陷的幾率。此外,藉由利用微影及蝕刻而非曝光及顯影來在感光性包封體306中形成開口316A,可使導通孔328A形成為具有較高縱橫比的較精細間距,此在當於發光二極體104當中形成導通孔328A時可為至關重要的。特定言之,導通孔328A可具有高達4.2的縱橫比。
在實施例中,一種製造半導體裝置的方法包含:將發光二極體連接至基底;使用感光性包封體包封發光二極體;形成穿過感光性包封體且鄰近發光二極體的第一開口;以及於第一開口中形成導通孔。
在方法的一些實施例中,於第一開口中形成導通孔包含:於感光性包封體上形成罩幕層;於罩幕層上形成光阻;使用與第一開口相對應的第一圖案來圖案化光阻;藉由第一蝕刻製程將第一圖案自光阻轉印至罩幕層;以及藉由第二蝕刻製程將第一圖案自罩幕層轉印至感光性包封體。在方法的一些實施例中,第一蝕刻製程為濕式蝕刻。在方法的一些實施例中,第二蝕刻製程為電漿氧化物蝕刻。在方法的一些實施例中,罩幕層包含Ti、Cu、TiW、TaN、TiN或其組合。在方法的一些實施例中,發光二極體包含:第一反射性結構,包含半導電材料的多個第一經摻雜層,多個第一經摻雜中的交替層經摻雜有p型摻雜劑;第二反射性結構,包含半導電材料的多個第二經摻雜層,多個第二經摻雜中的交替層經摻雜有n型摻雜劑;以及發光半導體區域,安置於第一反射性結構與第二反
射性結構之間。在一些實施例中,方法更包含:於感光性包封體中形成第二開口,第二開口暴露發光二極體;以及將導線鍍覆於第二開口中,導線將發光二極體的第一反射性結構與導通孔相連接。在方法的一些實施例中,發光二極體更包含位於第二反射性結構上的接觸墊,且將發光二極體連接至基底包含:將發光二極體的接觸墊連接至基底。
在實施例中,方法包含:將第一結構連接至內連線,第一結構包含自載體基底延伸的發光二極體,發光二極體的第一端子連接至內連線;移除載體基底以暴露發光二極體;使用感光性包封體包封發光二極體;在包封發光二極體之後,形成延伸穿過感光性包封體的第一導通孔以接觸內連線;以及形成將發光二極體的第二端子連接至第一導通孔的導線。
在方法的一些實施例中,載體基底包含半導電材料,且方法更包含:於載體基底上形成第一反射性結構,第一反射性結構包含半導電材料的多個第一經摻雜層,多個第一經摻雜中的交替層經摻雜有p型摻雜劑;於第一反射性結構上形成發光半導體區域;於發光半導體區域上形成第二反射性結構,第二反射性結構包含半導電材料的多個第二經摻雜層,多個第二經摻雜中的交替層經摻雜有n型摻雜劑;以及圖案化第一反射性結構、第二反射性結構以及發光半導體區域以形成發光二極體。在一些實施例中,方法更包含:於第二反射性結構上形成接觸墊;將鈍化層沈積於接觸墊及第二反射性結構上方;於鈍化層中形成暴露接觸墊的開口;以及於開口中形成以耦接接觸墊。在方法的一些實施例中,將第一結構連接至內連線包含:形成將凸塊下金屬電連接至內連線的導電連
接件,感光性包封體進一步包封導電連接件。在方法的一些實施例中,發光二極體連接至內連線的第一區域,內連線包含第二區域中的對準標記,且方法更包含:形成延伸穿過感光性包封體的第二導通孔以接觸內連線。在方法的一些實施例中,形成第一導通孔包含:於感光性包封體上方形成罩幕層;圖案化罩幕層以形成圖案化罩幕;將圖案化罩幕的圖案轉印至感光性包封體,以在內連線的第一區域上方的感光性包封體中形成第一開口;以及將第一導通孔鍍覆於第一開口中。在方法的一些實施例中,形成第二導通孔包含:使感光性包封體的部分暴露於光;以及使感光性包封體的經暴露部分顯影以在內連線的第二區域上方的感光性包封體中形成第二開口;以及將第二導通孔鍍覆於第二開口中。
在實施例中,半導體裝置包含:內連線;發光二極體,連接至內連線;感光性包封體,包圍發光二極體;第一導通孔,延伸穿過感光性包封體,第一導通孔電連接至內連線,第一導通孔包含晶種層上的導電材料,晶種層安置於導電材料與內連線之間,晶種層進一步安置於導電材料與感光性包封體之間;以及導線,將發光二極體連接至第一導通孔。
在裝置的一些實施例中,發光二極體包含:第一反射性結構,包含半導電材料的多個第一經摻雜層,多個第一經摻雜中的交替層經摻雜有p型摻雜劑;第二反射性結構,包含半導電材料的多個第二經摻雜層,多個第二經摻雜中的交替層經摻雜有n型摻雜劑;以及發光半導體區域,安置於第一反射性結構與第二反射性結構之間。在裝置的一些實施例中,發光二極體更包含第二反射性結構上的接觸墊,且內連線更包含接觸墊。在裝置的一些實施例
中,發光二極體更包含接觸墊上的凸塊下金屬。在一些實施例中,裝置更包含:導電連接件,將發光二極體的凸塊下金屬連接至內連線的接觸墊,感光性包封體包圍導電連接件。
前文概述若干實施例的特徵以使得所屬領域中具通常知識者可較佳地理解本揭露內容的態樣。所屬領域中具通常知識者應瞭解,其可易於使用本揭露內容作為設計或修改用於實現本文中所引入實施例的相同目的及/或達成相同優點的其他方法及結構的基礎。所屬領域中具通常知識者亦應認識到,此類等效構造並不脫離本揭露內容的精神及範圍,且所屬領域中具通常知識者可在不脫離本揭露內容的精神及範圍的情況下於本文中作出各種改變、替代以及更改。
104:發光二極體
106:第一反射性結構
108:發光半導體區域
110:第二反射性結構
112、210:接觸墊
206、304、342:鈍化層
202:半導體基底
204:內連線結構
204A、204B:墊
204C:對準標記
336:開口
300:雷射裝置
300A:發光區域
300B:連接區域
300C:對準區域
302:導電連接件
306:感光性包封體
328A、328B、328C:導通孔
338:導線
340:測試墊
Claims (13)
- 一種製造半導體裝置的方法,包括:將發光二極體連接至基底;使用感光性包封體包封所述發光二極體;形成穿過所述感光性包封體的第一開口,所述的第一開口鄰近所述發光二極體;以及於所述第一開口中形成導通孔,其中於所述第一開口中形成所述導通孔包括:於所述感光性包封體上形成罩幕層;於所述罩幕層上形成光阻;使用與所述第一開口相對應的第一圖案來圖案化所述光阻;藉由第一蝕刻製程將所述第一圖案自所述光阻轉印至所述罩幕層;以及藉由第二蝕刻製程將所述第一圖案自所述罩幕層轉印至所述感光性包封體。
- 如申請專利範圍第1項所述的方法,其中所述發光二極體包括:第一反射性結構,包括半導電材料的多個第一經摻雜層,所述多個第一經摻雜層中的交替層經摻雜有p型摻雜劑;第二反射性結構,包括所述半導電材料的多個第二經摻雜層,所述多個第二經摻雜層中的交替者經摻雜有n型摻雜劑;以及發光半導體區域,安置於所述第一反射性結構與所述第二反射性結構之間。
- 如申請專利範圍第2項所述的方法,更包括:於所述感光性包封體中形成第二開口,所述第二開口暴露所述發光二極體;以及將導線鍍覆於所述第二開口中,所述導線將所述發光二極體的所述第一反射性結構與所述導通孔相連接。
- 如申請專利範圍第2項所述的方法,其中所述發光二極體更包括位於所述第二反射性結構上的接觸墊,且將所述發光二極體連接至所述基底包括:將所述發光二極體的所述接觸墊連接至所述基底。
- 一種製造半導體裝置的方法,包括:將第一結構連接至內連線,所述第一結構包括自載體基底延伸的發光二極體,所述發光二極體的第一端子連接至所述內連線;移除所述載體基底以暴露所述發光二極體;使用感光性包封體包封所述發光二極體;在包封所述發光二極體之後,形成延伸穿過所述感光性包封體的第一導通孔以接觸所述內連線;以及形成將所述發光二極體的第二端子連接至所述第一導通孔的導線。
- 如申請專利範圍第5項所述的方法,其中所述載體基底包括半導電材料,且所述方法更包括:於所述載體基底上形成第一反射性結構,所述第一反射性結構包括所述半導電材料的多個第一經摻雜層,所述多個第一經摻雜層中的交替層經摻雜有p型摻雜劑;於所述第一反射性結構上形成發光半導體區域; 於所述發光半導體區域上形成第二反射性結構,所述第二反射性結構包括所述半導體材料的多個第二經摻雜層,所述多個第二經摻雜層中的交替層經摻雜有n型摻雜劑;以及圖案化所述第一反射性結構、所述第二反射性結構以及所述發光半導體區域以形成所述發光二極體。
- 如申請專利範圍第6項所述的方法,更包括:於所述第二反射性結構上形成接觸墊;將鈍化層沈積於所述接觸墊及所述第二反射性結構上方;於所述鈍化層中形成暴露所述接觸墊的開口;以及於所述開口中形成凸塊下金屬以耦接所述接觸墊。
- 如申請專利範圍第5項所述的方法,其中所述發光二極體連接至所述內連線的第一區域,所述內連線與第二區域中包括對準標記,且所述方法更包括:形成延伸穿過所述感光性包封體的第二導通孔以接觸所述內連線。
- 如專利申請範圍第8項所述的方法,其中形成所述第一導通孔包括:於所述感光性包封體上方形成罩幕層;圖案化所述罩幕層以形成圖案化罩幕;將所述圖案化罩幕的所述圖案轉印至所述感光性包封體,以在所述內連線的所述第一區域上方的所述感光性包封體中形成第一開口;以及將所述第一導通孔鍍覆於所述第一開口中。
- 如申請專利範圍第8項所述的方法,其中形成所述第 二導通孔包括:將所述感光性包封體的部分暴露於光;以及將所述感光性包封體的所述經暴露部分顯影,以在所述內連線的所述第二區域上方的所述感光性包封體中形成第二開口;以及將所述第二導通孔鍍覆於所述第二開口中。
- 一種半導體裝置,包括:內連線;發光二極體,連接至所述內連線,其中所述發光二極體更包括接觸墊,所述接觸墊安置於所述發光二極體與所述內連線之間;感光性包封體,包圍所述發光二極體;第一導通孔,延伸穿過所述感光性包封體,所述第一導通孔電連接至所述內連線,所述第一導通孔包括晶種層上的導電材料,所述晶種層安置於所述導電材料與所述內連線之間,所述晶種層進一步安置於所述導電材料與所述感光性包封體之間;導線,將所述發光二極體連接至所述第一導通孔;以及導電連接件,將所述接觸墊連接置所述內連線,所述導電連接件安置於所述接觸墊與所述內連線之間,其中所述接觸墊與所述導電連接件被所述感光性包封體包圍。
- 如申請專利範圍第11項所述的半導體裝置,其中所述發光二極體包括:第一反射性結構,包括半導電材料的多個第一經摻雜層,所述多個第一經摻雜層中的交替層經摻雜有p型摻雜劑;第二反射性結構,包括所述半導電材料的多個第二經摻雜層, 所述多個第二經摻雜層中的交替層經摻雜有n型摻雜劑;以及發光半導體區域,安置於所述第一反射性結構與所述第二反射性結構之間。
- 如申請專利範圍第12項所述的半導體裝置,其中所述接觸墊安置於所述發光二極體中所述第二反射性結構上,且所述內連線更包括接觸墊。
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017127920A1 (de) | 2017-01-26 | 2018-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Erhöhte Durchkontaktierung für Anschlüsse auf unterschiedlichen Ebenen |
US10622302B2 (en) | 2018-02-14 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for semiconductor device connection and methods of forming the same |
DE102018126130B4 (de) * | 2018-06-08 | 2023-08-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und -verfahren |
US10992100B2 (en) | 2018-07-06 | 2021-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
DE102019220378A1 (de) * | 2019-12-20 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement und verfahren zu dessen herstellung |
TWI752707B (zh) * | 2020-11-03 | 2022-01-11 | 財團法人工業技術研究院 | 具有通孔的基板及其製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6614058B2 (en) * | 2001-07-12 | 2003-09-02 | Highlink Technology Corporation | Light emitting semiconductor device with a surface-mounted and flip-chip package structure |
US20070105265A1 (en) * | 2002-09-25 | 2007-05-10 | Lai Jay J | Front side illuminated photodiode with backside bump |
US20090020777A1 (en) * | 2006-03-31 | 2009-01-22 | Masatoshi Iwata | Vertical resonator type light emitting diode |
US20180158712A1 (en) * | 2016-12-06 | 2018-06-07 | Imec Vzw | Method for Bonding Thin Semiconductor Chips to a Substrate |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4738937A (en) | 1985-10-22 | 1988-04-19 | Hughes Aircraft Company | Method of making ohmic contact structure |
JP3236774B2 (ja) | 1996-02-16 | 2001-12-10 | 日本電信電話株式会社 | 半導体集積回路 |
JPH10335383A (ja) | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2001251016A (ja) | 1999-12-28 | 2001-09-14 | Canon Inc | 面発光半導体レーザ及びその製造方法 |
JP2002009393A (ja) | 2000-04-19 | 2002-01-11 | Fuji Xerox Co Ltd | 垂直共振器型面発光半導体レーザ装置及びその製造方法 |
US20020086520A1 (en) | 2001-01-02 | 2002-07-04 | Advanced Semiconductor Engineering Inc. | Semiconductor device having bump electrode |
JP4166013B2 (ja) | 2001-12-26 | 2008-10-15 | 富士通株式会社 | 薄膜キャパシタ製造方法 |
TW558809B (en) | 2002-06-19 | 2003-10-21 | Univ Nat Central | Flip chip package and process of making the same |
US6934312B2 (en) * | 2002-09-30 | 2005-08-23 | Agilent Technologies, Inc. | System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom |
US7015093B2 (en) | 2003-10-30 | 2006-03-21 | Texas Instruments Incorporated | Capacitor integration at top-metal level with a protection layer for the copper surface |
JP2007149827A (ja) | 2005-11-25 | 2007-06-14 | Fujitsu Ltd | 電子部品製造方法および電子部品 |
US8003479B2 (en) | 2006-03-27 | 2011-08-23 | Intel Corporation | Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor |
KR100729360B1 (ko) | 2006-04-05 | 2007-06-15 | 삼성전자주식회사 | 반도체 장치의 커패시터 구조체 및 그 제조 방법 |
JP4783692B2 (ja) | 2006-08-10 | 2011-09-28 | 新光電気工業株式会社 | キャパシタ内蔵基板及びその製造方法と電子部品装置 |
JP2010040704A (ja) | 2008-08-04 | 2010-02-18 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体装置 |
JP5325506B2 (ja) | 2008-09-03 | 2013-10-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP2010073841A (ja) | 2008-09-18 | 2010-04-02 | Sony Corp | 光学パッケージ素子、表示装置、および電子機器 |
JP5434131B2 (ja) * | 2009-02-24 | 2014-03-05 | 富士通株式会社 | 多波長レーザ素子及びその製造方法 |
US8907446B2 (en) | 2009-05-19 | 2014-12-09 | Texas Instruments Incorporated | Integrated circuit structure with capacitor and resistor and method for forming |
US8435901B2 (en) * | 2010-06-11 | 2013-05-07 | Tokyo Electron Limited | Method of selectively etching an insulation stack for a metal interconnect |
US8344504B2 (en) | 2010-07-29 | 2013-01-01 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Semiconductor structure comprising pillar and moisture barrier |
US8610161B2 (en) * | 2010-10-28 | 2013-12-17 | Tsmc Solid State Lighting Ltd. | Light emitting diode optical emitter with transparent electrical connectors |
US20120142177A1 (en) | 2010-12-03 | 2012-06-07 | Jee-Yong Kim | Methods of manufacturing a wiring structure and methods of manufacturing a semiconductor device |
TW201232851A (en) | 2011-01-18 | 2012-08-01 | Siliconware Precision Industries Co Ltd | Package having emitting element and method for manufacturing the same |
US8466544B2 (en) | 2011-02-25 | 2013-06-18 | Stats Chippac, Ltd. | Semiconductor device and method of forming interposer and opposing build-up interconnect structure with connecting conductive TMV for electrical interconnect of Fo-WLCSP |
US20120266810A1 (en) * | 2011-04-20 | 2012-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Planarization system for high wafer topography |
KR101219030B1 (ko) | 2011-04-28 | 2013-01-21 | (재)한국나노기술원 | 수직형 발광다이오드 소자 및 그 제조방법 |
US9012993B2 (en) | 2011-07-22 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9123763B2 (en) | 2011-10-12 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-package (PoP) structure having at least one package comprising one die being disposed in a core material between first and second surfaces of the core material |
US8778737B2 (en) | 2011-10-31 | 2014-07-15 | International Business Machines Corporation | Flattened substrate surface for substrate bonding |
US20130181227A1 (en) * | 2012-01-12 | 2013-07-18 | King Dragon International Inc. | LED Package with Slanting Structure and Method of the Same |
US20140048951A1 (en) | 2012-08-14 | 2014-02-20 | Bridge Semiconductor Corporation | Semiconductor assembly with dual connecting channels between interposer and coreless substrate |
US9508674B2 (en) | 2012-11-14 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage control of semiconductor die package |
US8970023B2 (en) * | 2013-02-04 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and methods of forming same |
CN104122541B (zh) * | 2013-04-28 | 2016-08-17 | 意法半导体研发(深圳)有限公司 | 具有互连层的接近检测器设备及相关方法 |
KR102087939B1 (ko) | 2013-07-26 | 2020-03-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US9543373B2 (en) | 2013-10-23 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
US9673119B2 (en) | 2014-01-24 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for bonding package lid |
US20150228538A1 (en) * | 2014-02-11 | 2015-08-13 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
US9318429B2 (en) | 2014-03-31 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated structure in wafer level package |
US9704772B2 (en) * | 2014-04-02 | 2017-07-11 | Xintec Inc. | Chip package and method for forming the same |
US9666522B2 (en) * | 2014-05-29 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Alignment mark design for packages |
US9852998B2 (en) | 2014-05-30 | 2017-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ring structures in device die |
US9741692B2 (en) | 2014-09-15 | 2017-08-22 | Intel Corporation | Methods to form high density through-mold interconnections |
US9899248B2 (en) | 2014-12-03 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor packages having through package vias |
KR20160124375A (ko) | 2015-04-17 | 2016-10-27 | 삼성전자주식회사 | 반도체 발광 소자 패키지의 제조 방법 |
US10147849B2 (en) * | 2015-05-05 | 2018-12-04 | Xiangneng Hualei Optoelectronic Co., Ltd | Manufacturing method of flip-chip structure of group III semiconductor light emitting device |
US9899285B2 (en) | 2015-07-30 | 2018-02-20 | Semtech Corporation | Semiconductor device and method of forming small Z semiconductor package |
US9786599B2 (en) | 2015-08-21 | 2017-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structures and method of forming the same |
KR102546307B1 (ko) | 2015-12-02 | 2023-06-21 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
JP6725109B2 (ja) | 2016-08-30 | 2020-07-15 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US9859218B1 (en) | 2016-09-19 | 2018-01-02 | International Business Machines Corporation | Selective surface modification of interconnect structures |
US9876031B1 (en) | 2016-11-30 | 2018-01-23 | Sandisk Technologies Llc | Three-dimensional memory device having passive devices at a buried source line level and method of making thereof |
WO2018133084A1 (en) | 2017-01-23 | 2018-07-26 | Shenzhen Genorivision Technology Co. Ltd. | A laser radar |
US10297494B2 (en) | 2017-01-26 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Raised via for terminal connections on different planes |
JP2019066750A (ja) * | 2017-10-04 | 2019-04-25 | 株式会社ジャパンディスプレイ | 表示装置 |
US10622302B2 (en) | 2018-02-14 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for semiconductor device connection and methods of forming the same |
US10763249B2 (en) * | 2018-05-31 | 2020-09-01 | Sharp Kabushiki Kaisha | Image display device |
US10497796B1 (en) * | 2018-05-31 | 2019-12-03 | International Business Machines Corporation | Vertical transistor with reduced gate length variation |
US10992100B2 (en) | 2018-07-06 | 2021-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
-
2018
- 2018-10-12 US US16/158,604 patent/US11158775B2/en active Active
-
2019
- 2019-01-11 KR KR1020190003911A patent/KR102292352B1/ko active IP Right Grant
- 2019-01-15 CN CN201910035366.5A patent/CN110581209B/zh active Active
- 2019-02-15 TW TW108105196A patent/TWI704701B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6614058B2 (en) * | 2001-07-12 | 2003-09-02 | Highlink Technology Corporation | Light emitting semiconductor device with a surface-mounted and flip-chip package structure |
US20070105265A1 (en) * | 2002-09-25 | 2007-05-10 | Lai Jay J | Front side illuminated photodiode with backside bump |
US20090020777A1 (en) * | 2006-03-31 | 2009-01-22 | Masatoshi Iwata | Vertical resonator type light emitting diode |
US20180158712A1 (en) * | 2016-12-06 | 2018-06-07 | Imec Vzw | Method for Bonding Thin Semiconductor Chips to a Substrate |
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US11158775B2 (en) | 2021-10-26 |
TW202002339A (zh) | 2020-01-01 |
KR20190139745A (ko) | 2019-12-18 |
KR102292352B1 (ko) | 2021-08-25 |
US20190378962A1 (en) | 2019-12-12 |
CN110581209B (zh) | 2021-11-30 |
CN110581209A (zh) | 2019-12-17 |
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