CN104122541B - 具有互连层的接近检测器设备及相关方法 - Google Patents
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Abstract
本发明公开了一种接近检测器设备,可以包括:第一互连层,包括第一电介质层以及由其承载的多个第一导电迹线;IC层,在所述第一互连层之上并且具有图像传感器IC以及与所述图像传感器IC横向间隔的光源IC。所述接近检测器可以包括第二互连层,其在所述IC层之上并且具有第二电介质层以及由其承载的多个第二导电迹线。所述第二互连层可以具有在其中的分别与所述图像传感器IC和所述光源IC对准的第一开口和第二开口。所述图像传感器IC和所述光源IC中的每个可以被耦合到所述第一导电迹线和第二导电迹线。所述接近检测器可以包括透镜组件,其在所述第二互连层之上并且包括分别与所述第一开口和第二开口对准的第一透镜和第二透镜。
Description
技术领域
本公开涉及图像传感器设备领域,并且更具体地涉及接近检测器设备及相关方法。
背景技术
一般而言,电子设备包含一个或者多个用于提供增强的媒体功能的图像传感器模块。例如,典型的电子设备可以利用图像传感器模块来进行影像捕获或者视频电话会议。一些电子设备包括用于其它目的的附加的图像传感器设备,诸如接近检测器。
例如,电子设备可以使用接近检测器来提供对象距离,用于向相机专用的图像传感器模块提供聚焦调整。在移动设备应用中,当用户的手在附近时,可以使用接近检测器来检测,从而快速地并且准确地将设备从省电睡眠模式中唤醒。一般而言,接近检测器包括将辐射指向潜在的附近对象的光源,以及接收由附近对象反射的辐射的图像传感器。
例如,已转让给本申请的受让人的发明人为布罗迪等的第2009/0057544号美国专利申请公开了用于移动设备的图像传感器模块。该图像传感器模块包括透镜,承载透镜的外壳,以及在透镜和外壳上方的透镜盖。该图像传感器模块包括用于调整透镜的镜筒构件。在制造包括一个或者多个图像传感器模块的电子设备期间,尤其在大批量生产中,希望尽可能快速地制造电子产品。
在多步骤过程中制造典型的图像传感器模块。第一步包括半导体处理以提供图像传感器集成电路(IC)。下一步包括一些形式的针对图像传感器IC的测试和封装。如果需要,可以将图像传感器IC连同透镜和可移动镜筒一起装配到图像传感器模块中。可以手动地或者经由机器执行图像传感器模块的这一装配。例如,在使用表面安装组件的电子设备中,拾取和放置(pick-and-place(P&P))机器可以将组件装配到印刷电路板(PCB)上。此类单独封装的缺点在于,其效率可能相当低并且其还可能要求独立地检测每个设备,增加了制造时间。
在已转让给本申请的受让人的、发明人为科菲等的第2012/0248625号美国专利申请公开中公开了图像传感器的方法。这个图像传感器包括透明支承、在透明支承上的一对IC、以及在透明支承上并且围绕这一对IC的封装材料。
现在参考图1,如在现有技术中,接近检测器20包括电介质层26、在电介质层上的图像传感器IC24、同样在电介质层上的光源设备22以及在图像传感器IC和电介质层之间的粘接材料25。接近检测器20包括定位在电介质层26上并且具有在其中具有多个开口31、32a-32b的盖体21,以及覆盖光源设备22的透明粘接材料23。接近检测器20还包括由盖体21承载的透镜27,以及多个焊线29a-29c,该焊线29a-29c将图像传感器IC24和光源设备22耦合到电介质层26上的导电迹线。接近检测器20还包括在图像传感器IC24和透镜27之间的附加的透明粘接材料28。这种接近检测器20的潜在缺点包括使用P&P设备的多步骤高精度封装过程。同样,由于尺寸约束,该接近检测器20可能较不可靠并且难以集成到移动设备中。
发明内容
鉴于前述的背景技术,因此本公开的目的在于提供一种高效制造的接近检测器设备。
根据本公开的这个目的和其它目的、特征和优势由以下接近检测器设备提供,该接近检测器设备包括:第一互连层,包括第一电介质层以及由其承载的多个第一导电迹线;IC层,在第一互连层之上并且包括图像传感器IC以及与图像传感器IC横向间隔的光源IC。接近检测器可以包括第二互连层,其在IC层之上并且包括第二电介质层以及由其承载的多个第二导电迹线。第二互连层可以具有在其中的分别与图像传感器IC和光源IC对准的第一和第二开口。图像传感器IC和光源IC中的每个可以被耦合到多个第一和第二导电迹线。接近检测器可以包括透镜组件,其在第二互连层之上并且包括分别与第一和第二开口对准的第一和第二透镜。优选地,接近检测器可以通过使用稳健的晶片级工艺技术来制造并且具有减小的尺寸。
具体而言,IC层可以包括横向围绕图像传感器IC和光源IC的封装材料。封装材料可以包括多个导电过孔,每个导电过孔均被耦合在分别对准的成对的多个第一与第二导电迹线之间。
接近检测器设备还可以包括在第二互连层的第一和第二开口中的透明粘接材料。在一些实施例中,透镜组件还可以包括模制原料,其围绕第一和第二透镜并且具有分别与第一和第二透镜的其中之一对准的第一和第二开口。
此外,接近检测器设备还可以包括分别耦合到多个第一导电迹线的多个接触。例如,多个接触可以包括多个球栅阵列(BGA)接触。第一透镜可以包括滤光透镜。光源IC可以包括发光二极管。
另一方面涉及制造接近检测器设备的方法。该方法可以包括:形成第一互连层,该第一互连层包括第一电介质层以及由其承载的多个第一导电迹线;形成IC层,该IC层在第一互连层之上并且包括图像传感器IC以及与图像传感器IC横向间隔的光源IC。该方法可以包括形成第二互连层,该第二互连层在IC层之上并且包括第二电介质层以及由其承载的多个第二导电迹线。第二互连层可以具有在其中的分别与图像传感器IC和光源IC对准的第一和第二开口。图像传感器IC和光源IC中的每个可以被耦合到多个第一和第二导电迹线。该方法还可以包括形成透镜组件,该透镜组件在第二互连层之上并且包括分别与第一和第二开口对准的第一和第二透镜。
附图说明
图1是根据现有技术的接近检测器设备的示意性截面图。
图2是根据本公开的接近检测器设备的示意性截面图。
图3是用于制造图2的接近检测器设备的方法的流程图。
图4至图13是用于制造图2的接近检测器设备的步骤的示意性截面图。
图14至图16是用于制造根据本公开的接近检测器设备的另一实施例的步骤的示意性截面图。
具体实施方式
现在,在下文中将参照在其中示出了本公开的优选实施例的附图更加充分地描述本实施例。然而,本实施例可以被具体化为许多不同的形式,不应被理解为被限制到本文提出的实施例。相反,提供这些实施例使得本公开将变得周密和完善,并且将充分地向本领域的技术人员传达本实施例的范围。相同数字始终涉及相同部件,并且在备选实施例中使用最初符号来指示相似元件。
首先参考图2,现在描述依据本公开的接近检测器设备40。接近检测器设备40示例性地包括第一互连层41,第一互连层41包括第一电介质层45和由其承载的多个第一导电迹线48a-48b。接近检测器设备40示例性地包括IC层42,IC层42在第一互连层41之上并且包括图像传感器IC56以及与图像传感器IC横向间隔的光源IC55。光源IC55可以包括发光二极管(LED),诸如红外LED。
接近检测器设备40示例性地包括在IC层42之上的第二互连层43,并且第二互连层43包括第二电介质层46以及由其承载的多个第二导电迹线51a-51b。第二互连层43示例性地包括在其中的分别与图像传感器IC56和光源IC55对准的第一开口62a-62b和第二开口61。图像传感器IC56和光源IC55中的每个可以被耦合到多个第一导电迹线48a-48b和第二导电迹线51a-51b。
在图示的实施例中,第一开口62a-62b示例性地与图像传感器IC56对准。成对的第一开口62a-62b为图像传感器IC56提供了到第一和第二透镜腔的通路。
接近检测器设备40示例性地包括在第二互连层43之上的透镜组件44。透镜组件44示例性地包括第一透镜53和第二透镜52,其分别与第一开口62a-62b和第二开口61对准。
具体而言,IC层42包括横向围绕图像传感器IC56和光源IC55的封装材料47。封装材料47示例性地包括贯穿其中的多个导电过孔50a-50b。每个导电过孔50a-50b被耦合在分别对准的成对的多个第一导电迹线48a-48b与第二导电迹线51a-51b之间。
接近检测器设备40示例性地包括在第二互连层的第一开口62a-62b和第二开口61中透明粘接材料54a-54b。在示出的实施例中,透镜组件44包括围绕第一透镜53和第二透镜52的模制原料57。透镜组件44示例性地包括第一开口59a-59b和第二开口58,其分别与第一透镜53和第二透镜52的其中之一对准。在示出的实施例中,第一开口59a-59b与第一透镜53对准。
此外,接近检测器设备40示例性地包括多个接触49a-49b(图16),其分别耦合到多个第一导电迹线48a-48b,例如,多个接触49a-49b(图16)可以包括多个BGA接触。第一透镜53可以包括滤光透镜(例如玻璃滤镜或带有滤光涂覆层的透明薄片)。此外或者作为备选,第一透镜53还可以包括聚焦元件。
另一方面涉及制造接近检测器设备40的方法。该方法可以包括形成第一互连层41,第一互连层41包括第一电介质层45以及由其承载的多个第一导电迹线48a-48b。该方法可以包括形成IC层42,IC层42在第一互连层41之上并且包括图像传感器IC56以及与图像传感器IC56横向间隔的光源IC55。该方法可以包括形成第二互连层43,第二互连层43在IC层42之上并且包括第二电介质层46以及由其承载的多个第二导电迹线51-51b。第二互连层可以具有在其中的分别与图像传感器IC56和光源IC55对准的第一开口62a-62b和第二开口61,图像传感器IC和光源IC中的每个可以被耦合到多个第一导电迹线48a-48b和第二导电迹线51-51b。该方法还可以包括形成透镜组件44,透镜组件44在第二互连层43之上并且包括分别与第一开口62a-62b和第二开口61对准的第一透镜53和第二透镜52。
此外,现在参考图3至图16,流程图70图示了用于制造半导体器件20(方框71)的方法。在示出的实施例中,示出了用于制造成对相同的接近检测器设备40的晶片级工艺技术,但是应当理解的是,典型的过程将包括大量接近检测器设备的制造(有时包括在单个制造过程中的变化的实施例,即示出的邻近的接近检测器不需要相同)。该方法包括形成承载层90,以及在承载层90上的粘接层91(图4以及方框73)。该方法包括将图像传感器IC56和光源IC55定位在粘接层91上(图5和方框74)。在这一点上,还可以定位任意其他期望的表面安装设备(例如电容器)。该方法包括在图像传感器IC56和光源IC55上形成封装材料47以定义IC层42(图6和方框75)。
该方法包括通过加热粘接层91以分离IC层并且在IC层的相反面上再次将IC层应用到粘接层来将IC层42倒装在承载层90上(图7和方框77)。该方法还包括形成第二互连层43以及由其承载的多个第二导电迹线51a-51b(图8和方框78)。
该方法包括在第二互连层43的第一开口62a-62b和第二开口61中形成透明粘接材料54a-54b。该方法还包括将第一透镜53和第二透镜52定位在透明粘接材料54a-54b上(图9和方框79)。
该方法包括在第一透镜53和第二透镜52上形成模制原料57以限定透镜组件44(图10和方框80)。在一些实施例中,模制原料57的形成可以是薄膜辅助的。该方法包括将IC42、第二互连层43和透镜组件44倒装在承载层90上(图11和方框81)(再次使用加热步骤使粘接层91停止作用)。该方法包括研磨IC层42的背部的一部分(图12和方框82)。
该方法包括形成第一互连层41,其包括第一电介质层45以及由其承载的多个第一导电迹线48a-48b(图13和方框84)。在这个实施例中,多个第一导电迹线48a-48b定义LGA接触。该方法还包括切割步骤(图15)(方框84-86)。
优选地,可以使用稳健的晶片级工艺技术制造接近检测器设备40。此外,可以大量制造接近检测器设备40。此外,由于第一透镜53和第二透镜52被坚固地与透镜组件模型原料57集成在一起,因此该结构在机械上坚固。同样,透镜组件44被坚固地与第一互连层41、第二互连层43和IC层43集成在一起,同样增加了机械上的刚性。接近检测器设备40的封装比典型的方法要薄,因此允许其更加容易地集成到移动设备中。此外,接近检测器设备40为图像传感器IC55和光源IC56提供了良好的共面性,因此减少了接近检测计算的计算负荷(即来自具有邻近源和接收器位置)。
现在再参考图14至图16,描述用于制造接近检测器设备40的方法的另一实施例的步骤。在这一用于制造接近检测器设备40的方法的实施例中,给予在上文中已经结合图2至图13描述的步骤和元件初始符号并且在此无需赘述。这一实施例与前述实施例不同之处在于,该方法示例性地包括在多个第一导电迹线48a’-48b’上形成多个球栅阵列接触49a’-49b’(图14和方框85)。该方法示例性地包括使用切割刀片97’的切割步骤(图15-图16)。
获益于前述说明书和附图中存在的教导,本领域的技术人员可以想到本公开的许多修改和其它实施例。因此,应该理解本公开不仅限于所公开的具体实施例,并且修改和实施例都旨在包含在所附权利要求的范围内。
Claims (20)
1.一种接近检测器设备,包括:
第一互连层,包括第一电介质层以及由其承载的多个第一导电迹线;
集成电路IC层,在所述第一互连层之上并且包括
图像传感器IC,以及
光源IC,与所述图像传感器IC横向间隔;
第二互连层,在所述IC层之上并且包括第二电介质层以及由其承载的多个第二导电迹线,所述第二互连层具有在其中的分别与所述图像传感器IC和所述光源IC对准的第一开口和第二开口;
所述图像传感器IC和所述光源IC中的每个被耦合到所述多个第一导电迹线和第二导电迹线,以及
透镜组件,在所述第二互连层之上并且包括分别与所述第一开口和所述第二开口对准的第一透镜和第二透镜。
2.如权利要求1所述的接近检测器设备,其中所述IC层包括横向围绕所述图像传感器IC和所述光源IC的封装材料。
3.如权利要求2所述的接近检测器设备,其中所述封装材料包括多个导电过孔,每个导电过孔被耦合在分别对准的成对的所述多个第一导电迹线与所述第二导电迹线之间。
4.如权利要求1所述的接近检测器设备,还包括在所述第二互连层的所述第一开口和所述第二开口中的透明粘接材料。
5.如权利要求1所述的接近检测器设备,其中所述透镜组件还包括模制原料,所述模制原料围绕所述第一透镜和所述第二透镜并且具有分别与所述第一透镜和所述第二透镜的其中之一对准的第一开口和第二开口。
6.如权利要求1所述的接近检测器设备,还包括分别耦合到所述多个第一导电迹线的多个接触。
7.如权利要求6所述的接近检测器设备,其中所述多个接触包括多个球栅阵列BGA接触。
8.如权利要求1所述的接近检测器设备,其中所述第一透镜包括滤光透镜。
9.如权利要求1所述的接近检测器设备,其中所述光源IC包括发光二极管。
10.一种接近检测器设备,包括:
第一互连层,包括第一电介质层以及由其承载的多个第一导电迹线;
多个接触,分别耦合到所述多个第一导电迹线;
集成电路IC层,在所述第一互连层之上并且包括
图像传感器IC,
光源IC,与所述图像传感器IC横向间隔,以及
封装材料,横向围绕所述图像传感器IC和所述光源IC;
第二互连层,在所述IC层之上并且包括第二电介质层以及由其承载的多个第二导电迹线,所述第二互连层具有在其中的分别与所述图像传感器IC和所述光源IC对准的第一开口和第二开口;
所述图像传感器IC和所述光源IC中的每个被耦合到所述多个第一导电迹线和第二导电迹线,以及
透镜组件,在所述第二互连层之上并且包括分别与所述第一开口和第二开口对准的第一透镜和第二透镜。
11.如权利要求10所述的接近检测器设备,其中所述封装材料包括多个导电过孔,每个导电过孔被耦合在分别对准的成对的所述多个第一导电迹线与所述第二导电迹线之间。
12.如权利要求10所述的接近检测器设备,还包括在所述第二互连层的所述第一开口和第二开口中的透明粘接材料。
13.如权利要求10所述的接近检测器设备,其中所述透镜组件还包括模制原料,所述模制原料围绕所述第一透镜和第二透镜并且具有分别与所述第一透镜和第二透镜的其中之一对准的第一开口和第二开口。
14.如权利要求10所述的接近检测器设备,其中所述多个接触包括多个球栅阵列BGA接触。
15.一种制造接近检测器设备的方法,包括:
形成第一互连层,所述第一互连层包括第一电介质层以及由其承载的多个第一导电迹线;
形成集成电路IC层,所述IC层在所述第一互连层之上并且包括
图像传感器IC,以及
光源IC,与所述图像传感器IC横向间隔,
形成第二互连层,所述第二互连层在所述IC层之上并且包括第二电介质层以及由其承载的多个第二导电迹线,所述第二互连层具有在其中的分别与所述图像传感器IC和所述光源IC对准的第一开口和第二开口,所述图像传感器IC和所述光源IC中的每个被耦合到所述多个第一导电迹线和第二导电迹线;以及
形成透镜组件,所述透镜组件在所述第二互连层之上并且包括分别与所述第一开口和所述第二开口对准的第一透镜和第二透镜。
16.如权利要求15所述的方法,其中形成所述IC层包括形成横向围绕所述图像传感器IC和所述光源IC的封装材料。
17.如权利要求16所述的方法,其中形成所述IC层包括形成所述封装材料中的多个导电过孔,每个导电过孔被耦合在分别对准的成对的所述第一导电迹线与所述第二导电迹线之间。
18.如权利要求15所述的方法,还包括在所述第二互连层的所述第一开口和所述第二开口中填充透明粘接材料。
19.如权利要求15所述的方法,其中形成所述透镜组件还包括形成模制原料为围绕所述第一透镜和第二透镜,并且具有分别与所述第一透镜和第二透镜的其中之一对准的第一开口和第二开口。
20.如权利要求15所述的方法,还包括形成分别耦合到所述多个第一导电迹线的多个接触。
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US20190058076A1 (en) | 2019-02-21 |
US10141471B2 (en) | 2018-11-27 |
US10326039B2 (en) | 2019-06-18 |
US9768341B2 (en) | 2017-09-19 |
US20170330989A1 (en) | 2017-11-16 |
US20140319548A1 (en) | 2014-10-30 |
CN104122541A (zh) | 2014-10-29 |
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