TWI703013B - Grinding device - Google Patents

Grinding device Download PDF

Info

Publication number
TWI703013B
TWI703013B TW105134778A TW105134778A TWI703013B TW I703013 B TWI703013 B TW I703013B TW 105134778 A TW105134778 A TW 105134778A TW 105134778 A TW105134778 A TW 105134778A TW I703013 B TWI703013 B TW I703013B
Authority
TW
Taiwan
Prior art keywords
polishing
container
polishing liquid
liquid
pad
Prior art date
Application number
TW105134778A
Other languages
Chinese (zh)
Other versions
TW201722620A (en
Inventor
山中聰
三原拓也
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201722620A publication Critical patent/TW201722620A/en
Application granted granted Critical
Publication of TWI703013B publication Critical patent/TWI703013B/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本發明的課題在於在研磨被加工物的研磨裝置中，充分地活用被供給的研磨液之研磨能力，使對於被加工物的研磨品質均一。解決手段是，依據本發明所提供的是研磨裝置，其至少由下列構件與機構構成：工作夾台，將晶圓保持；研磨構件，具有可旋轉的研磨墊，此研磨墊面對且研磨保持在該工作夾台上的晶圓；研磨墊進給構件，使該研磨構件的該研磨墊接觸以及離開保持在該工作夾台上的晶圓；研磨液供給機構，將研磨液供給至保持於該工作夾台上的晶圓與該研磨墊；該研磨液供給機構至少由下列構件與容器構成：容器，圍繞該工作夾台，以形成上部開放的空間，並且貯存受供給的研磨液；研磨液飛散構件，配設在該容器的底部，使貯存在該容器中的研磨液飛散以供給至從該工作夾台懸伸的該研磨墊。 The subject of the present invention is to fully utilize the polishing ability of the supplied polishing liquid in a polishing apparatus for polishing a workpiece to make the polishing quality of the workpiece uniform. The solution is to provide a polishing device according to the present invention, which is composed of at least the following components and mechanisms: a work clamp table, which holds the wafer; a polishing member, which has a rotatable polishing pad, which faces and holds the polishing pad. Wafers on the work chuck table; polishing pad feeding member to make the polishing pad of the polishing member contact and leave the wafer held on the work chuck table; polishing liquid supply mechanism to supply the polishing liquid to the The wafer on the work clamp table and the polishing pad; the polishing liquid supply mechanism is composed of at least the following components and a container: a container surrounds the work clamp table to form an open upper space and stores the supplied polishing liquid; The liquid scattering member is arranged at the bottom of the container to scatter the polishing liquid stored in the container to be supplied to the polishing pad suspended from the work holder.

Description

研磨裝置 Grinding device 發明領域 Invention field

本發明是有關於一種研磨半導體晶圓等被加工物之研磨裝置。 The present invention relates to a polishing device for polishing semiconductor wafers and other processed objects.

發明背景 Background of the invention

在半導體元件製造步驟中，是在大致為圓板狀的半導體晶圓的表面上藉由排列成格子狀之被稱為切割道(street)的切斷線劃分出多數個矩形區域，並在該矩形區域的每一個中形成IC、LSI等元件。如此地沿著切割道將形成有多數個元件之半導體晶圓分割，藉此形成一個個的半導體元件。為了謀求半導體元件的小型化與輕量化，通常在沿著切割道將半導體晶圓切斷以分割一個個的矩形區域之前，會磨削半導體晶圓的背面以形成為預定的厚度。半導體晶圓的背面之磨削，通常是藉由令以例如樹脂黏結劑之適宜的黏結劑固著鑽石磨粒而形成的磨削磨石高速旋轉，同時將磨削磨石按壓在半導體晶圓的背面來執行。若藉由此種磨削方式磨削半導體晶圓的背面，磨削痕會殘留在半導體晶圓的背面，這會成為使被分割成一個個的半導體元件的抗折強度降低的原因。關於去除產生在此已磨削的半 導體晶圓的背面上的磨削痕之對策方面，已有實用化對於已磨削的半導體晶圓的背面供給含有游離磨粒的研磨液(slurry)且進行研磨的研磨裝置。 In the semiconductor device manufacturing step, a large number of rectangular areas are divided by cutting lines called streets arranged in a grid on the surface of a substantially disc-shaped semiconductor wafer. Elements such as IC, LSI, etc. are formed in each of the rectangular areas. In this way, the semiconductor wafer on which a plurality of devices are formed is divided along the dicing lane, thereby forming individual semiconductor devices. In order to achieve the miniaturization and weight reduction of semiconductor elements, generally, the back surface of the semiconductor wafer is ground to a predetermined thickness before the semiconductor wafer is cut along the dicing line to divide individual rectangular regions. The grinding of the back side of a semiconductor wafer is usually performed by rotating a grinding stone formed by fixing diamond abrasive grains with a suitable adhesive such as a resin adhesive, while pressing the grinding stone against the semiconductor wafer. To perform on the back. If the back surface of the semiconductor wafer is ground by this grinding method, the grinding marks will remain on the back surface of the semiconductor wafer, which may cause the reduction of the flexural strength of the divided semiconductor elements. Regarding the removal of the ground half In terms of countermeasures against the grinding marks on the back surface of the conductor wafer, a polishing apparatus has been put into practical use that supplies a slurry containing free abrasive grains to the back surface of a ground semiconductor wafer and performs polishing.

一般而言，使用研磨液的研磨裝置，必須在被加工物與研磨墊之間持續不斷地供給研磨液，但若是持續不斷地供給新研磨液的構成，則會在未能充分地活用研磨液中含有的游離磨粒下廢棄研磨液之同時，又供給新的研磨液，因此有投入的研磨液越多而加工成本會越高的問題，為解決該問題，已有令使用於研磨的研磨液循環而可再利用的構成之提案(參照例如專利文獻1。)。 Generally speaking, a polishing device that uses a polishing liquid must continuously supply the polishing liquid between the workpiece and the polishing pad. However, if it is configured to continuously supply new polishing liquid, the polishing liquid cannot be fully utilized. While discarding the polishing liquid under the free abrasive grains contained in it, it also supplies new polishing liquid. Therefore, the more polishing liquid is input, the higher the processing cost. In order to solve this problem, there have been made use of polishing Proposal of a reusable structure through liquid circulation (see, for example, Patent Document 1).

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1：日本專利特開平06-302567號公報 Patent Document 1: Japanese Patent Laid-Open No. 06-302567

發明概要 Summary of the invention

不過，在揭示於上述專利文獻1的研磨裝置中，為了令泥狀的研磨液毫不間斷且確實地循環供給，需要複雜之循環機構，而有裝置本身的成本增高的問題。又，裝設使研磨液循環的循環機構時，由於需要配合貯存的研磨液的量，連續地以研磨液研磨複數個晶圓，因此會有包含於研磨液的游離磨粒之劣化，以及因研磨而從被加工物脫離的物質在研磨液中增加等理由，造成研磨液的研磨能力會隨著研磨步驟的時間經過而慢慢地降低。其結果是，會 發生被研磨的晶圓之品質慢慢地降低，使連續研磨的晶圓之品質不均勻的問題。 However, in the polishing device disclosed in Patent Document 1, in order to circulate and supply the muddy polishing liquid without interruption and reliably, a complicated circulation mechanism is required, and there is a problem that the cost of the device itself increases. In addition, when a circulation mechanism for circulating the polishing liquid is installed, since it is necessary to continuously polish a plurality of wafers with the polishing liquid in accordance with the amount of the stored polishing liquid, the free abrasive particles contained in the polishing liquid may be degraded and caused The amount of substances detached from the workpiece during polishing increases in the polishing liquid. As a result, the polishing ability of the polishing liquid gradually decreases with the passage of the polishing step. As a result, will There is a problem that the quality of the wafers being polished gradually decreases, which makes the quality of the continuously polished wafers uneven.

本發明是有鑒於上述事實而作成的發明，其所欲解決之課題在於提供一種藉由充分地利用研磨裝置中的研磨液的研磨能力而不浪費研磨液，進而可均一地維持研磨品質的研磨裝置。 The present invention is an invention made in view of the above-mentioned facts. The problem to be solved is to provide a polishing device that can uniformly maintain the polishing quality by fully utilizing the polishing ability of the polishing liquid in the polishing device without wasting the polishing liquid. Device.

為了解決上述主要的技術課題，依據本發明所提供的研磨裝置，是供給研磨液以研磨晶圓的研磨裝置，其至少由下列構件與機構構成：工作夾台，在上部具有保持晶圓的保持面；研磨構件，具有可旋轉的研磨墊，此研磨墊面對且研磨保持在該工作夾台上的晶圓；研磨墊進給構件，使該研磨構件接近以及離開該工作夾台，以使該研磨墊接觸以及離開保持在該工作夾台上的晶圓；及研磨液供給機構，對保持於該工作夾台上的晶圓與該研磨墊供給研磨液，該研磨液供給機構至少由下列構件與容器構成：容器，圍繞該工作夾台以形成上部開放的空間，並且貯存受供給的研磨液；及研磨液飛散構件，配設在該容器的底部，使貯存在該容器的研磨液飛散以供給至從該工作夾台懸伸的該研磨墊。 In order to solve the above-mentioned main technical problems, the polishing device provided by the present invention is a polishing device that supplies a polishing liquid to polish a wafer. It is composed of at least the following components and mechanisms: a work chuck with a wafer holder on the upper part The polishing member has a rotatable polishing pad that faces and grinds the wafer held on the work chuck table; the polishing pad feed member makes the polishing member approach and leave the work chuck table to make The polishing pad contacts and leaves the wafer held on the work chuck table; and a polishing liquid supply mechanism for supplying polishing liquid to the wafer held on the work chuck table and the polishing pad. The polishing liquid supply mechanism is at least as follows Components and container structure: a container that surrounds the work clamp table to form an open upper space and stores the supplied polishing liquid; and a polishing liquid scattering member is arranged at the bottom of the container to scatter the polishing liquid stored in the container To be supplied to the polishing pad suspended from the work clamp table.

較理想的是，該容器的底構成為往研磨墊懸伸之側陷下般傾斜以收集研磨液，該研磨液飛散構件將收集後的研磨液飛散以供給至該研磨墊。 Preferably, the bottom of the container is configured to be inclined as it sinks toward the overhanging side of the polishing pad to collect the polishing liquid, and the polishing liquid scattering member scatters the collected polishing liquid to supply the polishing pad.

可將該容器的底部構成為形成有排出已收集的研磨液的排出口，又，可將該研磨液飛散構件構成為在該容器的底部具備對著該研磨墊噴射高壓氣體的氣體噴射口，將收集在底部的研磨液與從該噴射口噴射的氣體一起供給至研磨墊。再者，該噴射口也可以同時是將收集在底部的研磨液排出的排出口，該研磨液飛散構件可構成為利用葉片令研磨液飛散以供給至該研磨墊。 The bottom of the container may be configured to form a discharge port for discharging the collected polishing liquid, and the polishing liquid scattering member may be configured to include a gas injection port that sprays high-pressure gas against the polishing pad at the bottom of the container. The polishing liquid collected at the bottom is supplied to the polishing pad together with the gas injected from the injection port. In addition, the injection port may also be a discharge port for discharging the polishing liquid collected at the bottom, and the polishing liquid scattering member may be configured to use a blade to scatter the polishing liquid to be supplied to the polishing pad.

再者，可構成為當該工作夾台與該容器定位在該裝卸位置上時，藉由研磨液供給構件將研磨液供給至該容器中，也可在該研磨構件配設蓋體，進行研磨步驟時，封閉該容器的開放的上部。 Furthermore, when the work clamp table and the container are positioned at the loading and unloading position, the polishing liquid is supplied into the container by the polishing liquid supply member, or the polishing member can be provided with a lid for polishing During the step, close the open upper part of the container.

依據基於本發明的研磨裝置，是藉由至少由下列構件與機構構成，能充分利用受供給的必要最低限的研磨液之研磨能力，而可以少量的研磨液執行研磨步驟的研磨裝置：工作夾台，在上部具有保持晶圓的保持面；研磨構件，具有可旋轉的研磨墊，此研磨墊面對且研磨保持在該工作夾台上的晶圓；研磨墊進給構件，使該研磨構件接近以及離開該工作夾台，以使該研磨墊接觸以及離開保持在該工作夾台上的晶圓；研磨液供給機構，將研磨液供給至保持於該工作夾台上的晶圓與該研磨墊；該研磨液供給機 構至少由下列構件與容器構成：容器，圍繞該工作夾台以形成上部開放的空間，並且貯存受供給的研磨液；研磨液飛散構件，配設在該容器的底部，使貯存在該容器的研磨液飛散以供給至從該工作夾台懸伸的該研磨墊。而且，若構成為在該容器上設置研磨液排出口，當該工作夾台與該容器被定位在該裝卸位置上時，從研磨液供給構件將研磨液供給至該容器中，則可在研磨每1片的晶圓時，很容易地更換新的研磨液，而可容易實現隨時將研磨品質維持於一定之效果。 According to the polishing device based on the present invention, the polishing device is composed of at least the following components and mechanisms, which can make full use of the necessary minimum polishing capacity of the supplied polishing liquid, and can perform the polishing step with a small amount of polishing liquid: work clamp The table has a holding surface for holding the wafer on the upper part; the polishing member has a rotatable polishing pad that faces and grinds the wafer held on the work chuck table; the polishing pad feeding member makes the polishing member Approaching and leaving the work chuck to make the polishing pad contact and leave the wafer held on the work chuck; a polishing liquid supply mechanism that supplies the polishing fluid to the wafer held on the work chuck and the polishing Pad; the slurry supply machine The structure is composed of at least the following components and the container: the container surrounds the work clamp to form an open upper space and stores the supplied polishing liquid; the polishing liquid scattering member is arranged at the bottom of the container so that the The polishing liquid is scattered to be supplied to the polishing pad suspended from the work clamp table. In addition, if the container is configured to provide a polishing liquid discharge port, when the work clamp table and the container are positioned at the loading and unloading position, the polishing liquid is supplied to the container from the polishing liquid supply member, and the polishing can be performed It is easy to replace the polishing liquid with a new one for each wafer, and it is easy to achieve a certain effect of maintaining the polishing quality at any time.

1‧‧‧研磨裝置 1‧‧‧Grinding device

2‧‧‧裝置殼體 2‧‧‧Device housing

3‧‧‧研磨構件 3‧‧‧Grinding components

4‧‧‧研磨墊進給構件 4‧‧‧Grinding pad feed component

5‧‧‧轉台 5‧‧‧Turntable

11‧‧‧第1片匣 11‧‧‧The first cassette

12‧‧‧第2片匣 12‧‧‧The second cassette

13‧‧‧暫時載置構件 13‧‧‧Temporary placement of components

14‧‧‧洗淨構件 14‧‧‧Cleaning components

15‧‧‧被加工物搬送構件 15‧‧‧Working object conveying component

16‧‧‧被加工物搬入構件 16‧‧‧Being processed into components

17‧‧‧被加工物搬出構件 17‧‧‧Working object removal component

18‧‧‧研磨液供給噴嘴 18‧‧‧Grinding fluid supply nozzle

21‧‧‧主部 21‧‧‧Main part

22‧‧‧直立壁 22‧‧‧Upright Wall

221‧‧‧導軌 221‧‧‧Guide

31‧‧‧移動基台 31‧‧‧Mobile Abutment

311‧‧‧腳部 311‧‧‧Foot

312‧‧‧被引導溝 312‧‧‧Guide groove

313‧‧‧支撐部 313‧‧‧Support

32‧‧‧主軸單元 32‧‧‧Spindle unit

321‧‧‧主軸殼體 321‧‧‧Spindle housing

322‧‧‧旋轉主軸 322‧‧‧Rotating spindle

323‧‧‧馬達外殼 323‧‧‧Motor housing

324‧‧‧工具裝設構件 324‧‧‧Tool Installation Components

324‧‧‧蓋保持部 324‧‧‧Cover holding part

325‧‧‧研磨工具 325‧‧‧Grinding tools

325‧‧‧彈簧 325‧‧‧Spring

326‧‧‧支撐構件 326‧‧‧Supporting member

327‧‧‧研磨墊 327‧‧‧Polishing Pad

41‧‧‧公螺桿 41‧‧‧Male screw

42、43‧‧‧軸承構件 42、43‧‧‧Bearing components

44‧‧‧脈衝馬達 44‧‧‧Pulse motor

501‧‧‧開口 501‧‧‧Open

511‧‧‧旋轉軸 511‧‧‧Rotation axis

512‧‧‧旋轉接頭 512‧‧‧Rotary joint

513‧‧‧吸引源 513‧‧‧Attraction source

51a、51b‧‧‧工作夾台 51a, 51b‧‧‧Working clamp table

52‧‧‧容器 52‧‧‧Container

521‧‧‧三方閥 521‧‧‧Three-way valve

522‧‧‧高壓氣體容器 522‧‧‧High Pressure Gas Container

523‧‧‧吸引源 523‧‧‧Attraction source

524‧‧‧凹部設置 524‧‧‧Recess setting

525‧‧‧旋轉翼 525‧‧‧Rotating Wing

52a‧‧‧側壁部 52a‧‧‧Sidewall

52b‧‧‧底部 52b‧‧‧Bottom

52c‧‧‧開口 52c‧‧‧Open

52d‧‧‧旋轉凸座部 52d‧‧‧Rotating boss

53‧‧‧蓋體 53‧‧‧Cover body

54‧‧‧密封構件 54‧‧‧Sealing components

M‧‧‧馬達 M‧‧‧Motor

V‧‧‧皮帶 V‧‧‧Belt

W‧‧‧晶圓 W‧‧‧wafer

X、Y、Z‧‧‧方向 X, Y, Z‧‧‧direction

圖1是顯示依照本發明所構成之研磨裝置之一實施形態的立體圖。 Fig. 1 is a perspective view showing an embodiment of a polishing device constructed according to the present invention.

圖2是顯示裝備於圖1所示的研磨裝置上的工作夾台，以及容器的說明圖。 Fig. 2 is an explanatory diagram showing a working clamp table and a container equipped on the grinding device shown in Fig. 1.

圖3是顯示裝備於圖1所示的研磨裝置上的研磨構件之圖。 Fig. 3 is a diagram showing a polishing member equipped on the polishing device shown in Fig. 1.

圖4是用以說明以圖1所示的研磨裝置實施的研磨步驟之說明圖。 Fig. 4 is an explanatory diagram for explaining a polishing step performed by the polishing device shown in Fig. 1.

圖5是顯示圖4所示的研磨步驟時的研磨飛散構件的另一種實施型態之圖。 FIG. 5 is a diagram showing another embodiment of the polishing scattering member during the polishing step shown in FIG. 4.

用以實施發明之形態 The form used to implement the invention

以下，關於本發明之研磨裝置之較佳的實施形態，參照附加圖式並進一步詳細地說明。 Hereinafter, the preferred embodiment of the polishing device of the present invention will be described in further detail with reference to the attached drawings.

圖1中所示為依據本發明所構成之研磨裝置的立體圖。 Fig. 1 shows a perspective view of a grinding device constructed according to the present invention.

圖1所示的研磨裝置1具備以編號2顯示其全體的裝置殼體。裝置殼體2具備：直方體形狀的主部21，及設置於該主部21的後端部(在圖1的右上側)並往實質上之鉛直上方延伸的直立壁22。於直立壁22之前面設置有在上下方向上延伸的一對導軌221、221。此一對導軌221、221上，裝設有可在上下方向上移動的研磨構件3。附帶一提，如下說明中將圖1中以箭頭X所示的方向作為X軸方向、以箭頭Y所示的方向作為Y軸方向、以箭頭Z所示的方向作為Z軸方向。 The polishing apparatus 1 shown in FIG. 1 is equipped with the apparatus case shown by the number 2 as a whole. The device casing 2 includes a main portion 21 having a rectangular parallelepiped shape, and an upright wall 22 provided at the rear end portion (on the upper right side of FIG. 1) of the main portion 21 and extending substantially vertically upward. A pair of guide rails 221 and 221 extending in the vertical direction are provided on the front surface of the upright wall 22. The pair of guide rails 221 and 221 are provided with a polishing member 3 that can move in the vertical direction. Incidentally, in the following description, the direction indicated by arrow X in FIG. 1 is taken as the X axis direction, the direction indicated by arrow Y is taken as the Y axis direction, and the direction shown by arrow Z is taken as the Z axis direction.

研磨構件3具備：移動基台31、及裝設於移動基台31上的主軸單元32。移動基台31上設置有在後面兩側於上下方向(Z軸方向)上延伸的一對腳部311、311，在此一對腳部311、311上形成有可滑移地卡合於上述一對導軌221、221的被引導溝312、312。如此可滑移地裝設於設置在直立壁22上的一對導軌221、221上之移動基台31的前面，設置往前方突出的支撐部313。此支撐部313安裝有主軸單元32。 The polishing member 3 includes a moving base 31 and a spindle unit 32 installed on the moving base 31. The movable base 31 is provided with a pair of legs 311, 311 extending in the up and down direction (Z axis direction) on both sides of the rear side. The pair of legs 311, 311 are formed to be slidably engaged with the above The guided grooves 312 and 312 of the pair of guide rails 221 and 221. In this way, in front of the movable base 31 slidably installed on the pair of guide rails 221 and 221 provided on the upright wall 22, a supporting portion 313 protruding forward is provided. The supporting portion 313 is installed with the spindle unit 32.

主軸單元32具備：裝設於支撐部313的主軸殼體321、旋轉自如地配設在該主軸殼體321中的旋轉主軸322、及馬達外殼323，其內藏有伺服馬達作為驅動源而用於旋轉驅動該旋轉主軸322。旋轉主軸322的下端部越過主軸殼體321的下端往下方突出，其下端設置有圓板形狀的工具裝設構件324。再者，在此工具裝設構件324上，在周方向上隔 著間隔形成有複數個螺栓插通孔(省略圖示)。此工具裝設構件324的下表面裝設有研磨工具325。研磨工具325由圓板形狀的支撐構件326與圓板形狀的研磨墊327構成(一併參照圖4)，研磨墊327由黏接於支撐部326的不織布、胺基甲酸乙酯(烏拉坦)等所形成。 The spindle unit 32 includes a spindle housing 321 attached to the support portion 313, a rotating spindle 322 rotatably arranged in the spindle housing 321, and a motor housing 323, and a servo motor is built-in for use as a drive source The rotating spindle 322 is driven to rotate. The lower end of the rotating spindle 322 protrudes downward over the lower end of the spindle housing 321, and a disc-shaped tool installation member 324 is provided at the lower end. Furthermore, on this tool mounting member 324, there are A plurality of bolt insertion holes (not shown) are formed at intervals. A grinding tool 325 is mounted on the lower surface of the tool mounting member 324. The polishing tool 325 is composed of a disc-shaped support member 326 and a disc-shaped polishing pad 327 (see FIG. 4 together). The polishing pad 327 is made of non-woven fabric and urethane (urethane) bonded to the support 326. And so on.

更繼續說明，圖示的研磨裝置1具備研磨墊進給構件4，該研磨墊進給構件4使上述研磨構件3沿著上述一對導軌221、221在上下方向(Z軸方向)上移動。此研磨墊進給構件4具備公螺桿41，該公螺桿41配設在直立壁22的前側而實質上鉛直地延伸。此公螺桿41是其上端部與下端部由安裝在直立壁22上的軸承構件42及軸承構件43所旋轉自如地支撐。上側的軸承構件42配設有脈衝馬達44作為驅動源用於旋轉驅動公螺桿41，此脈衝馬達44的輸出軸傳動連結於公螺桿41。移動基台31的後面，形成有由自其寬度方向之中央部往後方突出的連結部(省略圖示)，此連結部上形成有在鉛直方向延伸的貫通螺孔，該公螺桿41螺合在此螺孔中。因而，當脈衝馬達44正轉時，研磨構件3下降，當脈衝馬達44反轉時，研磨構件3上升。 To continue the description, the illustrated polishing device 1 includes a polishing pad feeding member 4 that moves the polishing member 3 along the pair of guide rails 221 and 221 in the vertical direction (Z-axis direction). The polishing pad feeding member 4 includes a male screw 41 which is arranged on the front side of the upright wall 22 and extends substantially vertically. The upper and lower ends of the male screw 41 are rotatably supported by the bearing member 42 and the bearing member 43 mounted on the upright wall 22. The upper bearing member 42 is provided with a pulse motor 44 as a driving source for rotationally driving the male screw 41, and the output shaft of the pulse motor 44 is drivingly connected to the male screw 41. A connecting portion (not shown) protruding rearward from the central portion in the width direction of the movable base 31 is formed on the rear surface of the moving base 31. A through screw hole extending in the vertical direction is formed on the connecting portion, and the male screw 41 is screwed. In this screw hole. Therefore, when the pulse motor 44 rotates forward, the polishing member 3 goes down, and when the pulse motor 44 rotates backward, the polishing member 3 goes up.

裝置殼體2的主部21的後半部上表面配設有圓板形狀的轉台5。此轉台5是以實質上鉛直地延伸的中心軸線為中心旋轉自如地裝設，藉由收容在裝置殼體21內的適宜的電動馬達(省略圖示)所旋轉驅動。不過，在本實施型態中，如後所述，該轉台是構成為以180度的角度在周方向上往復動作。轉台5上，在周方向上隔著180度配設有第1工作 夾台51a、第2工作夾台51b，也就是配設在夾著轉台5的中心而相互面對的位置上。又，該轉台5上在配設有該第1、第2工作夾台51a、51b的位置上，配設有容器52、52，以各自收容此第1、第2工作夾台51a、51b。附帶一提，在圖1中，將第1工作夾台51a被定位的位置稱為被加工物受研磨的研磨位置，將第2工作夾台51b被定位的位置稱為被加工物裝卸於該工作夾台的裝卸位置。 A disc-shaped turntable 5 is arranged on the upper surface of the rear half of the main part 21 of the device housing 2. The turntable 5 is rotatably installed around a central axis extending substantially vertically, and is rotated and driven by an appropriate electric motor (not shown) housed in the device casing 21. However, in this embodiment, as described later, the turntable is configured to reciprocate in the circumferential direction at an angle of 180 degrees. On the turntable 5, the first work is arranged 180 degrees in the circumferential direction The chuck table 51a and the second work chuck table 51b are arranged at positions facing each other with the center of the turntable 5 sandwiched therebetween. Furthermore, the turntable 5 is provided with containers 52, 52 at positions where the first and second work chucking tables 51a, 51b are arranged, so as to accommodate the first and second work chucking tables 51a, 51b, respectively. Incidentally, in FIG. 1, the position where the first work chuck 51a is positioned is referred to as the polishing position where the workpiece is polished, and the position where the second work chuck 51b is positioned is referred to as the workpiece loading and unloading thereon. The loading and unloading position of the work clamp table.

關於該容器52與第1工作夾台51a的構成，參照圖2更具體地說明。 The structure of the container 52 and the first work chuck 51a will be described more specifically with reference to FIG. 2.

圖2是第1工作夾台51a被定位在圖1所示的研磨位置上的狀態的說明圖，為了便於說明，利用在X軸方向上切割容器52的剖面圖。為了阻塞設置於轉台5的開口穴501，並且為了包圍第1工作夾台51a，該容器52由側壁部52a與底部52b所構成。該底部52b上設置有後述的研磨液排出兼氣體噴出用的開口52c，且設置有傾斜使該開口52c成為在底部52b中最低的位置。又，在該底部52b的下表面側，設置有驅動第1工作夾台51a的電動馬達M，其驅動力是經由傳達該電動馬達M的旋轉驅動力之皮帶V，及配設在第1工作夾台51a的旋轉軸511上的旋轉接頭512來傳達。而且構成為該旋轉軸511的旋轉是經由設置於該底部52b且保持該旋轉軸511的旋轉凸座部52d，來驅使第1工作夾台51a旋轉。 FIG. 2 is an explanatory view of a state in which the first work chuck 51a is positioned at the polishing position shown in FIG. In order to block the opening hole 501 provided in the turntable 5 and to surround the first work clamp table 51a, the container 52 is composed of a side wall portion 52a and a bottom portion 52b. The bottom part 52b is provided with an opening 52c for polishing liquid discharge and gas ejection, which will be described later, and is inclined so that the opening 52c becomes the lowest position in the bottom part 52b. In addition, on the lower surface side of the bottom portion 52b, an electric motor M for driving the first work clamp table 51a is provided. The driving force of the electric motor M is provided through the belt V that transmits the rotational driving force of the electric motor M, and is arranged in the first work The rotary joint 512 on the rotating shaft 511 of the chuck table 51a is transmitted. The rotation of the rotation shaft 511 is configured to drive the first work chuck 51a to rotate via a rotation boss portion 52d provided on the bottom 52b and holding the rotation shaft 511.

該第1工作夾台51a的上表面由可通氣的多孔質陶瓷所形成，並構成為透過旋轉軸511與旋轉接頭512，傳達來自吸引源513的負壓，以真空吸附配置在第1工作夾台 51a上的被加工物。又，形成於容器52的底部52b的開口52c，透過電磁驅動的三方閥521與可撓性的導管，連結於高壓氣體容器522以及吸引源523，藉由適宜切換該三方閥521，而能夠切換將該開口52c連通於高壓氣體容器522或連通於吸引源523側。再者，關於貯存在高壓氣體容器522中的氣體的方面，除了壓縮空氣外，能從壓縮的N2、CO2、以及He等之中適宜選擇。又，由於第2工作夾台51b，以及包圍該第2工作夾台51b的容器52，也具有與此完全相同的構成，因此省略詳細的說明。 The upper surface of the first work clamp 51a is formed of porous ceramics that can be air-permeable, and is configured to transmit negative pressure from the suction source 513 through the rotating shaft 511 and the rotary joint 512, and is arranged on the first work clamp by vacuum suction station The processed object on 51a. In addition, the opening 52c formed in the bottom 52b of the container 52 is connected to the high-pressure gas container 522 and the suction source 523 through an electromagnetically driven three-way valve 521 and a flexible conduit, and can be switched by appropriately switching the three-way valve 521 The opening 52c is connected to the high-pressure gas container 522 or to the suction source 523 side. Furthermore, regarding the gas stored in the high-pressure gas container 522, in addition to compressed air, it can be appropriately selected from among compressed N2, CO2, and He. In addition, since the second work chuck 51b and the container 52 surrounding the second work chuck 51b also have the same configuration as this, detailed description is omitted.

再者，在本實施型態中，如圖3、4所示，研磨構件3具備有能夠封閉該容器52的上方開口的蓋體53。附帶一提，在圖1中，為了便於說明，蓋體53以虛線顯示。該蓋體53如圖4所示，經由設置於該主軸殼體321外周之蓋保持部324的彈簧325，受保持為可相對於主軸殼體321在上下方向上滑移，而可相對移動。該蓋體53的下端形成為對應於容器52的上方開口部的形狀，並在與該容器52接觸的部位配設有密封構件54。該蓋體53的上表面設置有排氣用的開口55，用於釋放噴射在後述的容器內的高壓氣體。 Furthermore, in this embodiment, as shown in FIGS. 3 and 4, the polishing member 3 is provided with a lid 53 capable of closing the upper opening of the container 52. Incidentally, in FIG. 1, for the convenience of description, the cover 53 is shown in a broken line. As shown in FIG. 4, the cover 53 is held by a spring 325 of a cover holding portion 324 provided on the outer circumference of the spindle housing 321 so as to be slidable in the vertical direction with respect to the spindle housing 321 and relatively movable. The lower end of the lid body 53 is formed in a shape corresponding to the upper opening of the container 52, and a sealing member 54 is arranged at a position in contact with the container 52. An opening 55 for exhaust is provided on the upper surface of the lid 53 for releasing the high-pressure gas injected into the container described later.

回到圖1並繼續說明，裝置殼體2的主部21中的前半段上，配設有：第1片匣11、第2片匣12、進行被加工物的中央對位的暫時載置構件13、洗淨構件14、被加工物搬送構件15、被加工物搬入構件16、被加工物搬出構件17，及後述的研磨液供給噴嘴18。第1片匣11是，收容研磨加工前的被加工物的片匣，被載置在裝置殼體2的主部21中的片 匣搬入區域中。第2片匣12載置在裝置殼體2的主部21中的片匣搬出區域中，收容研磨加工後的被加工物。該暫時載置構件13配設在第1片匣11與被加工物的裝卸位置之間，是暫時載置即將被研磨加工的被加工物的構件，並且可進行暫時載置的圓板狀被加工物的中心對位。洗淨構件14配設在被加工物的裝卸位置與第2片匣12之間，洗淨經研磨加工後的被加工物。 Returning to FIG. 1 and continuing the description, the first half of the main part 21 of the device housing 2 is provided with a first cassette 11, a second cassette 12, and a temporary placement of the workpiece for center alignment. The member 13, the cleaning member 14, the workpiece conveying member 15, the workpiece carrying-in member 16, the workpiece carrying-out member 17, and the polishing liquid supply nozzle 18 described later. The first cassette 11 is a cassette that contains the workpiece before polishing, and is placed in the main part 21 of the device housing 2 The cassette is moved into the area. The second cassette 12 is placed in the cassette unloading area in the main part 21 of the device casing 2 and accommodates the workpiece after grinding. The temporary placement member 13 is arranged between the first cassette 11 and the attachment/detachment position of the workpiece, and is a member for temporarily placing the workpiece to be polished, and is a disk-shaped quilt that can be temporarily placed The center of the workpiece is aligned. The cleaning member 14 is arranged between the attachment/detachment position of the workpiece and the second cassette 12, and cleans the workpiece after the grinding process.

被加工物搬送構件15配設在第1片匣11與第2片匣12之間，將收容在第1片匣11內的被加工物搬出至暫時載置構件13，並且將由洗淨構件14洗淨的被加工物搬入至第2片匣12。被加工物搬入構件16配設在暫時載置構件13與被加工物的裝卸位置之間，將載置在暫時載置構件13上的研磨加工前的被加工物搬送至定位於該裝卸位置的工作夾台上。被加工物搬出構件17配設在該裝卸位置與洗淨構件14之間，將載置在定位於該裝卸位置的工作夾台上的經研磨加工後的被加工物搬送至洗淨構件14上。收容在第1片匣11的加工前的被加工物全部被加工，而第1片匣11空了之後，以收容有加工前的被加工物的新的第1片匣11替換空的片匣。又，由第1片匣11搬出且已經過研磨加工的被加工物全被收容在第2片匣12的收容部後，以空的新第2片匣12片匣替換之。 The workpiece conveying member 15 is arranged between the first cassette 11 and the second cassette 12, and the workpiece contained in the first cassette 11 is carried out to the temporary placement member 13, and the cleaning member 14 The cleaned to-be-processed object is carried into the second cassette 12. The workpiece carrying-in member 16 is arranged between the temporary placement member 13 and the attachment/detachment position of the workpiece, and transports the workpiece before the grinding process placed on the temporary placement member 13 to the position positioned at the attachment/detachment position. On the work clamp table. The workpiece carrying out member 17 is arranged between the loading and unloading position and the cleaning member 14, and the polished workpiece placed on the work chuck positioned at the loading and unloading position is transferred to the cleaning member 14 . All the processed objects stored in the first cassette 11 before processing are processed, and after the first cassette 11 is empty, replace the empty cassette with a new first cassette 11 containing the processed objects before processing . In addition, after the workpieces that have been polished and carried out from the first cassette 11 are all stored in the accommodating portion of the second cassette 12, they are replaced with an empty second cassette 12.

接著，參照圖1、2以及4，說明以上述研磨裝置進行的研磨作業。 Next, with reference to FIGS. 1, 2 and 4, the polishing operation performed by the above-mentioned polishing apparatus will be described.

首先，將作為收容在第1片匣11的加工前的被加工物 之半導體晶圓W，定為被被加工物搬出構件15的上下動作以及進退動作搬出的被加工物。由被加工物搬出構件15所搬出的半導體晶圓W，載置在被加工物的暫時載置構件13上。被載置在暫時載置構件13上的半導體晶圓W，在此進行中心對位後，藉由被加工物搬入構件16的吸引以及迴旋動作，被運送並載置在定位於加工物的裝卸位置的第2工作夾台51b上。半導體晶圓W被載置在第2工作夾台51b後，由圖2所示的吸引構件513透過可撓性的導管使負壓作用在第2工作夾台51b的上表面之保持面上。如此，半導體晶圓W被吸引保持在第2工作夾台51b的上表面之保持面上。半導體晶圓W被吸引保持在第2工作夾台51b上後，由研磨液供給構件18將預定量(例如200ml)的新的研磨用的研磨液供給至圍繞第2工作夾台51b的容器52內。 First of all, it will be used as a processed object before processing stored in the first cassette 11 The semiconductor wafer W is defined as the object to be processed that is carried out by the up and down movement and forward and backward movements of the object to be carried out member 15. The semiconductor wafer W carried out by the workpiece carrying member 15 is placed on the temporary placing member 13 of the workpiece. The semiconductor wafer W placed on the temporary placement member 13 is centered here, and is transported and placed on the loading and unloading of the workpiece by the suction and turning action of the workpiece carrying member 16 Position on the second work clamp table 51b. After the semiconductor wafer W is placed on the second work chuck 51b, the suction member 513 shown in FIG. 2 passes through a flexible tube to cause negative pressure to act on the holding surface of the upper surface of the second work chuck 51b. In this way, the semiconductor wafer W is sucked and held on the holding surface of the upper surface of the second work chuck 51b. After the semiconductor wafer W is sucked and held on the second work chuck 51b, a predetermined amount (for example, 200 ml) of new polishing liquid for polishing is supplied by the polishing liquid supply member 18 to the container 52 surrounding the second work chuck 51b Inside.

一旦研磨液供給至圍繞第2工作夾台51b的容器52內後，使轉台5旋轉180度，以使第2工作夾台51b移動至研磨構件3的下方的位置，亦即研磨位置，並且原本位在研磨位置上的第1工作夾台51a被移動至裝卸位置。附帶一提，此時，研磨構件3待機於上方位置，以避面載置於第2工作夾台51b上的半導體晶圓W接觸研磨墊327。 Once the polishing liquid is supplied into the container 52 surrounding the second work chuck 51b, the turntable 5 is rotated 180 degrees to move the second work chuck 51b to a position below the polishing member 3, that is, the polishing position. The first work chuck 51a located at the polishing position is moved to the attaching and detaching position. Incidentally, at this time, the polishing member 3 stands by at the upper position to avoid contact with the polishing pad 327 of the semiconductor wafer W placed on the second work clamp table 51b.

使載置有被加工物之未加工的半導體晶圓W的第2工作夾台51b移動至研磨位置後，藉由啟動電導馬達M，使該第2工作夾台51b以例如300rpm左右旋轉，驅動內建在上述馬達外殼323的伺服馬達以使研磨工具325以4000~7000rpm旋轉，並且正轉驅動該研磨墊進給構件4的脈 衝馬達44，使研磨構件3下降。在此，在研磨墊327接近半導體晶圓W後，切換三方閥521以連結於高壓氣體容器522側，使高壓氣體由容器52的底部52b的開口52c噴出。如圖4所示，該容器的底構成為，朝向研磨墊327相對於工作夾台懸伸之側陷下般傾斜以收集研磨液，以成為藉由高壓氣體從該開口52c噴出，使貯存在該容器52的底部的泥狀研磨液向上方飛散，而被吹往在研磨墊327的該懸伸區域。附帶一提，在研磨墊327接近半導體晶圓W的狀態下，容器52的上方由與研磨構件3一起下降的蓋體53所封閉，該第2工作夾台51b的周圍成為略微密閉空間，但噴出在該密閉空間內的氣體是可從設置在蓋體53的上表面的排氣用的開口55釋放。 After moving the second work chuck 51b on which the unprocessed semiconductor wafer W of the object to be processed is placed to the polishing position, the conductance motor M is activated to rotate the second work chuck 51b at, for example, about 300 rpm to drive The servo motor built in the motor housing 323 allows the grinding tool 325 to rotate at 4000 to 7000 rpm and to drive the pulse of the grinding pad feeding member 4 in a forward rotation. The punch motor 44 lowers the polishing member 3. Here, after the polishing pad 327 approaches the semiconductor wafer W, the three-way valve 521 is switched to connect to the high-pressure gas container 522 side, and the high-pressure gas is ejected from the opening 52c of the bottom 52b of the container 52. As shown in FIG. 4, the bottom of the container is configured to incline toward the side of the polishing pad 327 overhanging with respect to the work chuck to collect the polishing liquid, so that the high-pressure gas is sprayed from the opening 52c to be stored in the The muddy polishing liquid at the bottom of the container 52 is scattered upward and is blown toward the overhang area of the polishing pad 327. Incidentally, in a state where the polishing pad 327 is close to the semiconductor wafer W, the upper part of the container 52 is closed by the lid 53 that descends together with the polishing member 3, and the periphery of the second work chuck 51b becomes a slightly closed space, but The gas ejected in the enclosed space can be released from the exhaust opening 55 provided on the upper surface of the lid 53.

在研磨液被吹往研磨墊327的狀態下，更使研磨構件3下降，以預定的負載將研磨墊327按壓在第2工作夾台51b上的半導體晶圓W之研磨面上，以實施研磨加工。此時，由於供給至研磨墊327上的研磨液為泥狀，因此附著在研磨墊上的研磨液繼續受保持，而相當於間接地對半導體晶圓W的加工面供給研磨液。附帶一提，為了對半導體晶圓W的加工面更進一步供給研磨液，若將令研磨液飛散之吹氣的方向定位在，半導體晶圓W的加工面與研磨墊327的抵接部，則可提高加工效率而比較理想。然後，藉由實施預定時間(例如5分鐘左右)的研磨加工，除去殘留於被加工面的磨削痕，結束研磨步驟。 With the polishing liquid being blown to the polishing pad 327, the polishing member 3 is further lowered, and the polishing pad 327 is pressed against the polishing surface of the semiconductor wafer W on the second work chuck 51b with a predetermined load to perform polishing Processing. At this time, since the polishing liquid supplied to the polishing pad 327 is muddy, the polishing liquid adhering to the polishing pad continues to be held, which corresponds to indirectly supplying the polishing liquid to the processing surface of the semiconductor wafer W. Incidentally, in order to further supply the polishing liquid to the processing surface of the semiconductor wafer W, if the direction of the blowing air for scattering the polishing liquid is positioned at the contact portion between the processing surface of the semiconductor wafer W and the polishing pad 327, It is ideal for improving processing efficiency. Then, the grinding process is performed for a predetermined time (for example, about 5 minutes) to remove the grinding marks remaining on the processed surface, and the grinding step is ended.

在對於載置在第2工作夾台51b上的半導體晶圓 W實施上述的研磨步驟的期間，定位在裝卸位置側的第1工作夾台51a方面，是藉由與針對第2工作夾台51b所進行的相同之工序，將被加工物之研磨加工前的半導體晶圓W從第1片匣11搬出，並藉由被加工物搬入構件16，將該半導體晶圓W載置在第1工作夾台51a上，而成為待機狀態。附帶一提，將載置有未加工的半導體晶圓的第2工作夾台51b定位在研磨位置上，並且將第1工作夾台51a定位在裝卸位置時，若第1工作夾台51a載置有研磨後的半導體晶圓W，在載置研磨加工前的新的半導體晶圓W前，實施後述的被加工物搬出步驟。 For the semiconductor wafer placed on the second work chuck 51b During the implementation of the above-mentioned polishing step, the first work chuck 51a positioned on the side of the loading and unloading position is subjected to the same process as that performed for the second work chuck 51b. The semiconductor wafer W is carried out from the first cassette 11, and the semiconductor wafer W is placed on the first work chuck 51a by the workpiece carrying-in member 16 to be in a standby state. Incidentally, when the second work chuck 51b on which the unprocessed semiconductor wafer is placed is positioned at the polishing position, and the first work chuck 51a is positioned at the attaching and detaching position, if the first work chuck 51a is placed There is a semiconductor wafer W after polishing, and before placing a new semiconductor wafer W before polishing processing, a process to be processed is carried out, which will be described later.

如上所述，對於位於研磨位置的第2工作夾台51b上的半導體晶圓W實行的研磨步驟結束後，切換三方閥521，令開口52c連通吸引源523，並使由吸引幫浦所構成但已停止的吸引源523開始運作。藉此，將貯存在容器52的底部的研磨液受吸引而從容器52去除，並且將研磨液廢棄在與該吸引源523共同設置的廢棄容器(省略圖示)，經過一定時間後，停止該吸引源523的運作。又，與此同時，使研磨墊進給構件4的脈衝馬達44反轉而使主軸單元32上昇至預定位置，並且使研磨工具325的旋轉停止，也使第2工作夾台51b的旋轉停止。然後，令轉台5在與使該第2工作夾台51b往該研磨位置移動時的旋轉方向相反的方向上旋轉180度，再度定位在該裝卸位置上。 As described above, after the polishing step performed on the semiconductor wafer W on the second work chuck 51b at the polishing position is completed, the three-way valve 521 is switched so that the opening 52c is connected to the suction source 523, and the suction pump is composed of The stopped suction source 523 starts to operate. Thereby, the polishing liquid stored at the bottom of the container 52 is sucked and removed from the container 52, and the polishing liquid is discarded in a waste container (not shown) provided with the suction source 523. After a certain period of time, the polishing liquid is stopped. Operation of attracting source 523. At the same time, the pulse motor 44 of the polishing pad feeding member 4 is reversed to raise the spindle unit 32 to a predetermined position, the rotation of the polishing tool 325 is stopped, and the rotation of the second work chuck 51b is also stopped. Then, the turntable 5 is rotated by 180 degrees in the direction opposite to the rotation direction when the second work chuck 51b is moved to the polishing position, and is positioned at the attaching and detaching position again.

如此，實施過研磨加工的第2工作夾台51b被定位在裝卸位置後，實施被加工物的搬出步驟。首先，停止吸 引源513的運作，使負壓不再作用在第2工作夾台51b的保持面上，以解除研磨加工結束後的半導體晶圓W之吸引保持。第2工作夾台51b之吸引保持解除後的半導體晶圓W，由被加工物搬出構件17搬出，並搬送至被加工物的洗淨構件14。被搬送至該洗淨構件14的半導體晶圓W，在此洗淨(晶圓洗淨步驟)，之後由被加工物搬送構件15收容在第2片匣12的預定位置。 In this way, after the second work chuck 51b that has been polished is positioned at the attaching and detaching position, the step of carrying out the workpiece is performed. First, stop sucking The operation of the lead source 513 prevents the negative pressure from acting on the holding surface of the second work chuck 51b to release the suction and holding of the semiconductor wafer W after the polishing process is completed. The semiconductor wafer W after the suction and holding of the second work chuck 51b has been released is carried out by the workpiece carrying out member 17 and transported to the workpiece cleaning member 14. The semiconductor wafer W transported to the cleaning member 14 is cleaned here (wafer cleaning step), and then stored in a predetermined position of the second cassette 12 by the workpiece transport member 15.

實施上述晶圓洗淨步驟的同時，在裝卸位置上，以圖未示的洗淨構件洗淨半導體晶圓W已搬出且沒有載置任何物品的狀態之第2工作夾台51b。附帶一提，由於該洗淨構件不構成本發明的重要部分，因此省略其詳細說明。 While performing the above-mentioned wafer cleaning step, at the loading and unloading position, a cleaning member (not shown) is used to clean the second work chuck 51b in a state where the semiconductor wafer W has been transported out and nothing is placed. Incidentally, since the cleaning member does not constitute an important part of the present invention, its detailed description is omitted.

對於上述的第2工作夾台51b所實施的洗淨結束後，如最初所說明地，從第1片匣11搬出加工前的半導體晶圓W，將此半導體晶圓W載置在第2工作夾台51b的上面，且在受吸引保持的狀態下待機。在此期間，對於被保持在第1工作夾台51a上的半導體晶圓W實施上述的研磨加工。藉由反覆實施如此的步驟，能使對於原先收容在第1片匣11中的所有半導體晶圓W實施的研磨步驟完成。 After the cleaning of the above-mentioned second work chuck 51b is completed, the semiconductor wafer W before processing is carried out from the first cassette 11, and the semiconductor wafer W is placed in the second work as described in the beginning. The upper surface of the clamping table 51b stands by while being sucked and held. During this period, the above-mentioned polishing process is performed on the semiconductor wafer W held on the first work chuck 51a. By repeatedly performing such steps, the polishing steps performed on all the semiconductor wafers W originally contained in the first cassette 11 can be completed.

在上述的實施型態中，關於使貯存在容器52的底部52b的研磨液飛散在研磨墊327上的研磨液飛散構件方面，是藉由從開口52c單純地使高壓氣體噴出，使研磨液混合於噴出氣體中，而使混合後的研磨液飛散，但關於該研磨液飛散構件方面，並不受限於此形態。例如，如圖5所示，容器52的底部52b的開口52c，更在其上部設置凹部524，配 設具有複數片葉片的旋轉翼525，以圖未示的電動馬達使該旋轉翼525旋轉。如此，能使保持在旋轉的旋轉翼的葉片的上面之研磨液朝向該研磨墊327飛散。附帶一提，也可以不藉由該電動馬達，而藉由使高壓氣體從底部52b的開口52c噴出，來使旋轉翼525旋轉。 In the above-mentioned embodiment, regarding the polishing liquid scattering member that causes the polishing liquid stored in the bottom 52b of the container 52 to be scattered on the polishing pad 327, the polishing liquid is mixed by simply ejecting high-pressure gas from the opening 52c. In the ejected gas, the mixed polishing liquid is scattered, but the polishing liquid scattering member is not limited to this form. For example, as shown in FIG. 5, the opening 52c of the bottom 52b of the container 52 is further provided with a recess 524 on the upper part thereof, A rotating wing 525 having a plurality of blades is provided, and the rotating wing 525 is rotated by an electric motor not shown. In this way, the polishing liquid held on the upper surface of the blade of the rotating rotor can be scattered toward the polishing pad 327. Incidentally, instead of using the electric motor, high-pressure gas may be ejected from the opening 52c of the bottom 52b to rotate the rotary wing 525.

以上說明了基於本發明的研磨裝置之適宜實施型態，但本發明也能夠在記載於申請專利範圍的範圍包含有各種的變形例子。例如，在上述實施形態中，雖設定成具備有封閉容器52的上方的蓋體53，但由於研磨液是泥狀的物質，因此此蓋體53不一定是必須的構成，而可視使用的研磨液的狀態，來省略之。又，如圖2、4所示，開口52c雖構成為兼具用以使研磨液飛散，並吹往在研磨墊327的懸伸區域的高壓噴出口與用以排出貯存在容器52中的研磨液的排出口，但並不受限於此，也可以個別地設置高壓噴出口與排出口。 As mentioned above, the suitable implementation form of the polishing apparatus based on this invention was demonstrated, but this invention can also include various modification examples within the range described in the patent application. For example, in the above embodiment, although it is set to include a lid 53 that closes the upper part of the container 52, since the polishing liquid is a mud-like substance, the lid 53 is not necessarily an essential structure, but may be used for polishing. The state of the liquid is omitted. In addition, as shown in FIGS. 2 and 4, the opening 52c is configured to have both a high-pressure jet port for scattering the polishing liquid and blowing it toward the overhang area of the polishing pad 327 and for discharging the polishing stored in the container 52. The liquid discharge port is not limited to this, and the high-pressure discharge port and the discharge port may be separately provided.

321‧‧‧主軸殼體 321‧‧‧Spindle housing

322‧‧‧旋轉主軸 322‧‧‧Rotating spindle

324‧‧‧工具裝設構件 324‧‧‧Tool Installation Components

325‧‧‧研磨工具 325‧‧‧Grinding tools

326‧‧‧支撐構件 326‧‧‧Supporting member

327‧‧‧研磨墊 327‧‧‧Polishing Pad

5‧‧‧轉台 5‧‧‧Turntable

501‧‧‧開口 501‧‧‧Open

511‧‧‧旋轉軸 511‧‧‧Rotation axis

512‧‧‧旋轉接頭 512‧‧‧Rotary joint

513‧‧‧吸引源 513‧‧‧Attraction source

51a‧‧‧工作夾台 51a‧‧‧Working clamp table

52‧‧‧容器 52‧‧‧Container

521‧‧‧三方閥 521‧‧‧Three-way valve

522‧‧‧高壓氣體容器 522‧‧‧High Pressure Gas Container

523‧‧‧吸引源 523‧‧‧Attraction source

52a‧‧‧側壁部 52a‧‧‧Sidewall

52b‧‧‧底部 52b‧‧‧Bottom

52c‧‧‧開口 52c‧‧‧Open

52d‧‧‧旋轉凸座部 52d‧‧‧Rotating boss

53‧‧‧蓋體 53‧‧‧Cover body

54‧‧‧密封構件 54‧‧‧Sealing components

M‧‧‧馬達 M‧‧‧Motor

V‧‧‧皮帶 V‧‧‧Belt

W‧‧‧晶圓 W‧‧‧wafer

Claims (10)

一種研磨裝置，是供給研磨液以研磨晶圓的研磨裝置，其至少由下列構件與機構構成：工作夾台，在上部具有保持晶圓的保持面；研磨構件，具有可旋轉的研磨墊，此研磨墊面對且研磨保持在該工作夾台上的晶圓；研磨墊進給構件，使該研磨構件接近以及離開該工作夾台，以使該研磨墊接觸以及離開保持在該工作夾台上的晶圓；及研磨液供給機構，對保持於該工作夾台上的晶圓與該研磨墊供給研磨液，該研磨液供給機構至少由下列容器與構件構成：容器，圍繞該工作夾台以形成上部開放的空間，並且貯存受供給的研磨液；及研磨液飛散構件，配設在該容器的底部，使貯存在該容器中的研磨液飛散以供給至從該工作夾台懸伸的該研磨墊，該研磨液飛散構件在該容器的底部具備對著該研磨墊噴射高壓氣體的氣體噴射口，將收集在底部的研磨液與從該噴射口噴射的氣體一起供給至研磨墊。 A polishing device is a polishing device that supplies a polishing liquid to polish a wafer. It is composed of at least the following components and mechanisms: a work clamp table with a holding surface for holding the wafer on the upper part; a polishing component with a rotatable polishing pad. The polishing pad faces and grinds the wafer held on the work chuck; the polishing pad feed member makes the polishing member approach and leave the work chuck, so that the polishing pad contacts and leaves and is held on the work chuck And a polishing liquid supply mechanism for supplying polishing liquid to the wafer held on the work clamp table and the polishing pad. The polishing liquid supply mechanism is composed of at least the following containers and components: a container surrounding the work clamp table A space with an open upper part is formed, and the supplied polishing liquid is stored; and a polishing liquid scattering member is arranged at the bottom of the container to scatter the polishing liquid stored in the container to be supplied to the suspension suspended from the work clamp The polishing pad includes a gas injection port at the bottom of the container that sprays high-pressure gas against the polishing pad, and supplies the polishing liquid collected at the bottom to the polishing pad together with the gas injected from the injection port. 一種研磨裝置，是供給研磨液以研磨晶圓的研磨裝置，其至少由下列構件與機構構成：工作夾台，在上部具有保持晶圓的保持面； 研磨構件，具有可旋轉的研磨墊，此研磨墊面對且研磨保持在該工作夾台上的晶圓；研磨墊進給構件，使該研磨構件接近以及離開該工作夾台，以使該研磨墊接觸以及離開保持在該工作夾台上的晶圓；及研磨液供給機構，對保持於該工作夾台上的晶圓與該研磨墊供給研磨液，該研磨液供給機構至少由下列容器與構件構成：容器，圍繞該工作夾台以形成上部開放的空間，並且貯存受供給的研磨液；及研磨液飛散構件，配設在該容器的底部，使貯存在該容器中的研磨液飛散以供給至從該工作夾台懸伸的該研磨墊，該研磨液飛散構件以葉片令研磨液飛散以供給至該研磨墊。 A polishing device is a polishing device that supplies a polishing liquid to polish a wafer, and is composed of at least the following components and mechanisms: a working clamp table with a holding surface for holding the wafer on the upper part; The polishing member has a rotatable polishing pad that faces and polishes the wafer held on the work chuck table; the polishing pad feed member makes the polishing member approach and leave the work chuck table to make the polishing The pad contacts and leaves the wafer held on the work chuck table; and a polishing liquid supply mechanism for supplying polishing liquid to the wafer held on the work chuck table and the polishing pad. The polishing liquid supply mechanism consists of at least the following containers and Components: a container that surrounds the work chuck to form an open upper space and stores the supplied polishing liquid; and a polishing liquid scattering member is arranged at the bottom of the container to scatter the polishing liquid stored in the container. When supplied to the polishing pad suspended from the work clamp table, the polishing liquid scattering member uses a blade to scatter the polishing liquid to be supplied to the polishing pad. 如請求項1之研磨裝置，其中，該容器的底構成為往研磨墊懸伸之側陷下般傾斜以收集研磨液，該研磨液飛散構件將收集後的研磨液飛散以供給至該研磨墊。 The polishing device according to claim 1, wherein the bottom of the container is configured to be inclined as it sinks toward the overhanging side of the polishing pad to collect polishing liquid, and the polishing liquid scattering member scatters the collected polishing liquid to supply the polishing pad. 如請求項2之研磨裝置，其中，該容器的底構成為往研磨墊懸伸之側陷下般傾斜以收集研磨液，該研磨液飛散構件將收集後的研磨液飛散以供給至該研磨墊。 The polishing apparatus according to claim 2, wherein the bottom of the container is configured to be inclined as it sinks toward the overhanging side of the polishing pad to collect polishing liquid, and the polishing liquid scattering member scatters the collected polishing liquid to supply the polishing pad. 如請求項3或4之研磨裝置，其中，在該容器的底部形成有排出已收集的研磨液的排出口。 The polishing device of claim 3 or 4, wherein a discharge port for discharging the collected polishing liquid is formed at the bottom of the container. 如請求項1或3之研磨裝置，其中，該氣體噴射口亦同時 是將收集在該容器的底部的研磨液排出的排出口。 Such as the grinding device of claim 1 or 3, wherein the gas injection port is also at the same time It is a discharge port through which the polishing liquid collected at the bottom of the container is discharged. 如請求項5之研磨裝置，其中，該氣體噴射口亦同時是將收集在該容器的底部的研磨液排出的排出口。 Such as the polishing device of claim 5, wherein the gas injection port is also a discharge port for discharging the polishing liquid collected at the bottom of the container. 如請求項1至4的任何一項之研磨裝置，其中，該工作夾台與該容器被配設在轉台上，該轉台將該工作夾台與該容器定位在裝卸晶圓的裝卸位置與研磨晶圓的研磨位置。 Such as the polishing device of any one of claims 1 to 4, wherein the work clamp table and the container are arranged on a turntable, and the turntable positions the work clamp table and the container at the loading and unloading position for loading and unloading wafers and polishing The polishing position of the wafer. 如請求項8之研磨裝置，其中，當該工作夾台與該容器定位在該裝卸位置時，藉由研磨液供給構件將研磨液供給至該容器中。 The polishing device of claim 8, wherein when the work clamp and the container are positioned at the loading and unloading position, the polishing liquid is supplied into the container by the polishing liquid supply member. 如請求項1至4的任何一項之研磨裝置，其中，在該研磨構件配設蓋體，進行研磨步驟時，封閉該容器的開放的上部。 The polishing device according to any one of claims 1 to 4, wherein the polishing member is provided with a cover, and when the polishing step is performed, the open upper part of the container is closed.
TW105134778A 2015-12-01 2016-10-27 Grinding device TWI703013B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-234563 2015-12-01
JP2015234563A JP6685707B2 (en) 2015-12-01 2015-12-01 Polishing equipment

Publications (2)

Publication Number Publication Date
TW201722620A TW201722620A (en) 2017-07-01
TWI703013B true TWI703013B (en) 2020-09-01

Family

ID=59015805

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105134778A TWI703013B (en) 2015-12-01 2016-10-27 Grinding device

Country Status (4)

Country Link
JP (1) JP6685707B2 (en)
KR (1) KR102435162B1 (en)
CN (1) CN106903595B (en)
TW (1) TWI703013B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7032217B2 (en) * 2018-04-05 2022-03-08 株式会社ディスコ Polishing equipment
CN112518573B (en) * 2020-11-06 2022-06-07 西安奕斯伟硅片技术有限公司 Polishing apparatus, polishing machine, and polishing method
KR102582770B1 (en) * 2021-03-03 2023-09-27 (주)미래컴퍼니 Polishing Apparatus
CN115070536A (en) * 2022-07-26 2022-09-20 徐州盛科半导体科技有限公司 Thinning machine for processing semiconductor wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302567A (en) * 1993-04-12 1994-10-28 Disco Abrasive Syst Ltd Semiconductor wafer free abrasive polishing apparatus
JP2000158331A (en) * 1997-12-10 2000-06-13 Canon Inc Precise polishing method and device for substrate
JP2005153090A (en) * 2003-11-27 2005-06-16 Disco Abrasive Syst Ltd Device for machining wafer
JP6302567B2 (en) 2014-12-01 2018-03-28 シャープ株式会社 Food management system, refrigerator, server, refrigerator control method, and server control method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005103696A (en) * 2003-09-30 2005-04-21 Disco Abrasive Syst Ltd Polishing device
CN100482383C (en) * 2006-03-23 2009-04-29 北京有色金属研究总院 Method for preparing metal sizing agent by a compelling, equal-freezing and continuous method
US8133097B2 (en) * 2009-05-07 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing apparatus
CN104816235A (en) * 2015-04-23 2015-08-05 华文进 Flange grinding device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302567A (en) * 1993-04-12 1994-10-28 Disco Abrasive Syst Ltd Semiconductor wafer free abrasive polishing apparatus
JP2000158331A (en) * 1997-12-10 2000-06-13 Canon Inc Precise polishing method and device for substrate
JP2005153090A (en) * 2003-11-27 2005-06-16 Disco Abrasive Syst Ltd Device for machining wafer
JP6302567B2 (en) 2014-12-01 2018-03-28 シャープ株式会社 Food management system, refrigerator, server, refrigerator control method, and server control method

Also Published As

Publication number Publication date
CN106903595B (en) 2020-08-07
TW201722620A (en) 2017-07-01
KR102435162B1 (en) 2022-08-22
KR20170064474A (en) 2017-06-09
JP2017100227A (en) 2017-06-08
JP6685707B2 (en) 2020-04-22
CN106903595A (en) 2017-06-30

Similar Documents

Publication Publication Date Title
TWI703013B (en) Grinding device
CN107756238B (en) Grinding device
CN107639530B (en) Grinding device
CN107887313B (en) Processing device
CN110103131B (en) Grinding and polishing device and grinding and polishing method
JP2004001118A (en) Dust disposer and machine tool equipped with dust disposer
TWI823988B (en) polishing pad
JP2003059872A (en) Grinding apparatus
JP2012006123A (en) Cleaning method
JP7339860B2 (en) processing equipment
TW202208079A (en) Workpiece cleaning method having a removing step for removing the cleaning liquid attached on the lower surface side of the workpiece
JP7161412B2 (en) cleaning unit
JP6244148B2 (en) Processing equipment
JP4074118B2 (en) Polishing equipment
JP2003257912A (en) Cleaning apparatus for semiconductor wafer
JP2020136500A (en) Chuck table
JP5922381B2 (en) Processing equipment equipped with a bite tool
JP2003305643A (en) Polishing device
JP2003236752A (en) Polisher
JP2023028360A (en) Machining device, and method for washing holding surface of chuck table
JP2023008104A (en) Chuck table for suction-holding plate-like workpiece, processing device comprising chuck table, and processing method for plate-like workpiece using processing device
TW202330191A (en) Grinding device capable of discharging grinding debris from a holding surface and a porous member constituting the holding surface without increasing the size of the device
JP2003243345A (en) Polishing device
TW202349478A (en) Conveyance unit and processing device capable of drying a work-piece or a lower surface of a frame unit containing the work-piece and suppressing a decrease in productivity
JP2022075141A (en) Grinding device