TWI700746B - 蝕刻液組成物及蝕刻方法 - Google Patents
蝕刻液組成物及蝕刻方法 Download PDFInfo
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- TWI700746B TWI700746B TW105127504A TW105127504A TWI700746B TW I700746 B TWI700746 B TW I700746B TW 105127504 A TW105127504 A TW 105127504A TW 105127504 A TW105127504 A TW 105127504A TW I700746 B TWI700746 B TW I700746B
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- Prior art keywords
- based layer
- etching solution
- etching
- copper
- titanium
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- 238000005530 etching Methods 0.000 title claims abstract description 105
- 239000000203 mixture Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 45
- 239000010936 titanium Substances 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 33
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 22
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 21
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 claims description 6
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 4
- PVPTUASRAVWKGX-UHFFFAOYSA-N 1,2-dihydrotriazol-3-amine Chemical compound NN1NNC=C1 PVPTUASRAVWKGX-UHFFFAOYSA-N 0.000 claims description 3
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 3
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 3
- -1 sulfonic acid compound Chemical class 0.000 abstract description 41
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 19
- 125000000217 alkyl group Chemical group 0.000 abstract description 14
- 150000003839 salts Chemical class 0.000 abstract description 9
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 5
- 125000003118 aryl group Chemical group 0.000 abstract description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 abstract description 4
- 125000005027 hydroxyaryl group Chemical group 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 44
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 17
- 125000003342 alkenyl group Chemical group 0.000 description 10
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 10
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- 235000014113 dietary fatty acids Nutrition 0.000 description 8
- 239000000194 fatty acid Substances 0.000 description 8
- 229930195729 fatty acid Natural products 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
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- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 3
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000003851 azoles Chemical class 0.000 description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 3
- 229940092714 benzenesulfonic acid Drugs 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- DIZBQMTZXOUFTD-UHFFFAOYSA-N 2-(furan-2-yl)-3h-benzimidazole-5-carboxylic acid Chemical compound N1C2=CC(C(=O)O)=CC=C2N=C1C1=CC=CO1 DIZBQMTZXOUFTD-UHFFFAOYSA-N 0.000 description 2
- DETXZQGDWUJKMO-UHFFFAOYSA-N 2-hydroxymethanesulfonic acid Chemical compound OCS(O)(=O)=O DETXZQGDWUJKMO-UHFFFAOYSA-N 0.000 description 2
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- ZCLXQTGLKVQKFD-UHFFFAOYSA-N 3-hydroxybenzenesulfonic acid Chemical compound OC1=CC=CC(S(O)(=O)=O)=C1 ZCLXQTGLKVQKFD-UHFFFAOYSA-N 0.000 description 2
- QMHIMXFNBOYPND-UHFFFAOYSA-N 4-methylthiazole Chemical compound CC1=CSC=N1 QMHIMXFNBOYPND-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- GFFGJBXGBJISGV-UHFFFAOYSA-N Adenine Chemical compound NC1=NC=NC2=C1N=CN2 GFFGJBXGBJISGV-UHFFFAOYSA-N 0.000 description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229960000643 adenine Drugs 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 125000005263 alkylenediamine group Chemical group 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 229940053200 antiepileptics fatty acid derivative Drugs 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 description 1
- 125000004066 1-hydroxyethyl group Chemical group [H]OC([H])([*])C([H])([H])[H] 0.000 description 1
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- IULJSGIJJZZUMF-UHFFFAOYSA-N 2-hydroxybenzenesulfonic acid Chemical compound OC1=CC=CC=C1S(O)(=O)=O IULJSGIJJZZUMF-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
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- JDQDSEVNMTYMOC-UHFFFAOYSA-N 3-methylbenzenesulfonic acid Chemical compound CC1=CC=CC(S(O)(=O)=O)=C1 JDQDSEVNMTYMOC-UHFFFAOYSA-N 0.000 description 1
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- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 1
- 150000008041 alkali metal carbonates Chemical class 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
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- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
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- UREZNYTWGJKWBI-UHFFFAOYSA-M benzethonium chloride Chemical compound [Cl-].C1=CC(C(C)(C)CC(C)(C)C)=CC=C1OCCOCC[N+](C)(C)CC1=CC=CC=C1 UREZNYTWGJKWBI-UHFFFAOYSA-M 0.000 description 1
- 229960001950 benzethonium chloride Drugs 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
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- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical class CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
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- 239000003002 pH adjusting agent Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical class CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C09K13/00—Etching, surface-brightening or pickling compositions
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- C23F1/00—Etching metallic material by chemical means
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- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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Abstract
本發明之目的在於提供能將具有包含鈦系層及銅系層的積層體之被蝕刻材的鈦系層及銅系層予以一併蝕刻，即使連續地使用，也能得到所欲的剖面形狀之細線的蝕刻液組成物及包含使用該蝕刻液之蝕刻方法。
為了達成上述目的，本發明提供一種蝕刻液組成物及一種包含使用該蝕刻液之蝕刻方法，該蝕刻液組成物包含：(A)過氧化氫0.1~15質量%；(B)氟化物離子供給源0.01~1質量%；(C)以下述通式(I)表示的有機磺酸化合物或其鹽，以有機磺酸換算為0.1~20質量%；(D)自唑系化合物及在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物所選出的至少1種化合物0.01~5質量%及(E)水。
Description
本發明關於將位於基體上且含有至少1種的鈦系層及至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻用之蝕刻液組成物及使用該蝕刻液組成物之蝕刻方法。
以平面顯示器等為代表的顯示裝置之配線材料，為了滿足顯示器的大型化及高解析度化之要求，已知採用由銅所成的配線或以銅作為主成分的配線，併用以鈦或氮化鈦等為代表的鈦系金屬作為阻隔膜而使用。關於銅與鈦系的多層被膜之濕式蝕刻，已知各種的技術。
例如，專利文獻1中揭示一種蝕刻液，其包含過硫酸銨、有機酸、銨鹽、含氟化合物、二醇系化合物及唑系化合物，可將含有鈦及銅的雙重膜予以蝕刻。又，專利文獻2中揭示一種蝕刻液，其包含氟離子供給源、過氧化氫、硫酸鹽、磷酸鹽、唑系化合物及溶劑。
專利文獻1：日本特表2013-522901號公報
專利文獻2：日本特開2008-288575號公報
配線等所使用的細線之剖面形狀，較佳為細線下部的寬度比細線上部的寬度更大之剖面形狀。於如此的剖面形狀時，已知難以發生細線的崩壞。然而，例如藉由將在基體上積層有至少1種的鈦系層與至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻，而在基體上形成由積層有鈦系層與銅系層的積層體所成之細線之際，當連續地使用上述所揭示的蝕刻液時，所溶出的銅係溶入蝕刻液內而蝕刻液中的銅濃度上升，因此有無法得到所欲的剖面形狀之細線的問題。
因此，本發明之目的在於解決上述問題。即，本發明之目的在於提供一種蝕刻液組成物，其係將在基體上積層有至少1種的鈦系層與至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻之際，即使連續地使用相同的蝕刻液而蝕刻液中的銅濃度上升時，也能得到所欲的剖面形狀之細線，而且經由蝕刻處理所產生的細線之細寬度小。
本發明者等為了解決上述問題而重複專心致力的檢討，結果發現一種蝕刻液組成物，其包含：(A)過氧化氫0.1~15質量%；(B)氟化物離子供給源0.01~1質量%；(C)以下述通式(I)表示的有機磺酸化合物或其鹽，以有機磺酸換算為0.1~20質量%；(D)自唑系化合物及在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物所選出的至少1種化合物0.01~5質量%及(E)水，可解決上述問題，而達成本發明。
(式中，R表示碳原子數1~4的烷基、碳原子數1~4的羥基烷基、碳原子數6~10的芳基、碳原子數6~10的羥基芳基)。
即，本發明提供一種蝕刻液組成物，其係將位於基體上且含有至少1種的鈦系層及至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻用之蝕刻液組成物，其特徵為包含：(A)過氧化氫0.1~15質量%；(B)氟化物離子供給源0.01~1質量%；(C)以下述通式(I)表示的有機磺酸化合物或其鹽，以有機磺酸換算
為0.1~20質量%；(D)自唑系化合物及在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物所選出的至少1種化合物0.01~5質量%及(E)水。
又，本發明提供一種蝕刻方法，其包含使用上述蝕刻液組成物，將在基體上積層有至少1種的鈦系層及至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻。
本發明之蝕刻液組成物及包含使用該蝕刻液組成物之蝕刻方法，係將在基體上積層有鈦系層與銅系層之積層體的鈦系層與銅系層予以一併蝕刻之際，即使連續地使用相同的蝕刻液而蝕刻液中的銅濃度上升時，也能得到所欲的剖面形狀之細線。即，於本發明之蝕刻液組成物中，即使再度重複地使用相同的蝕刻液，也能維持優異的蝕刻機能，可抑制蝕刻液的交換頻率。再者，可得到經由蝕刻處理所發生的細線之細寬度小的製品。
以下，具體地說明本發明之實施形態。
本發明所使用的基體係可使用該蝕刻之技術領域中所一般使用者。例如，可舉出玻璃、矽等。
於本發明中，成為蝕刻的對象(被蝕刻材)
者，係在基體上積層至少1種的鈦系層與至少1種的銅系層而形成之積層體。即，此積層體係相當於位於基體上的多層被膜。
前述積層體包含至少1種的鈦系層及至少1種的銅系層。該鈦系層係可為1層，也可為2層以上的積層體。又，該銅系層係可為1層，也可為2層以上的積層體。包含該鈦系層與銅系層之積層體，係銅系層可為鈦系層之上層，也可為下層，亦可在上層及下層。另外，亦可為鈦系層與銅系層交替積層者。還有，只要不妨礙本發明之效果，則本發明所用的積層體亦可包含其他的層，但較佳為由該鈦系層及該銅系層所構成。
本說明書中記載的「鈦系層」只要是包含鈦之層即可，並沒有特別的限定，例如以質量基準，可舉出包含50%以上、較佳60%以上、更佳70%以上的鈦之導電層。具體而言，將由金屬鈦及以鈦鎳合金等為代表的鈦合金所選出的1種以上所組成之層予以總稱者。
本說明書中記載的「銅系層」只要是包含銅之層即可，並沒有特別的限定，例如以質量基準，可舉出包含50%以上、較佳60%以上、更佳70%以上的銅之導電層。例如，將由金屬銅及以銅鎳合金等為代表的銅合金所選出的1種以上所組成之層予以總稱者。
本發明之蝕刻液組成物中所用的(A)過氧化氫(以下，亦簡稱(A)成分)之濃度為0.1~15質量%之範圍。(A)成分之濃度係可按照作為所欲的被蝕刻材
之積層有鈦系層與銅系層的積層體之厚度或寬度，於上述濃度範圍內適宜調節。然而，從容易進行蝕刻速度的控制來看，特佳為0.5~10質量%。未達0.1質量%時，得不到充分的蝕刻速度。另一方面，比15質量%還多時，有蝕刻速度的控制變困難之情況。
本發明之蝕刻液組成物中所用的(B)氟化物離子供給源(以下，亦簡稱(B)成分)，只要是在蝕刻液組成物中產生氟化物離子者即可，並沒有特別的限定，例如可舉出氫氟酸、氟化銨、氟化氫銨、氟化鈉、氟化鉀、氟化鋰等。鹼金屬的氟化物鹽由於在蝕刻處理後，有鹼金屬殘留於被蝕刻基體上之情況，故較佳為使用氫氟酸、氟化銨、氟化氫銨。
本發明之蝕刻液組成物中的(B)成分之濃度為0.01~1質量%之範圍。(B)成分之濃度係可按照作為所欲的被蝕刻材之積層有鈦系層與銅系層的積層體之厚度或寬度，於上述濃度範圍內適宜調節，但特佳為0.05~0.5質量%。未達0.01質量%時，得不到充分的蝕刻速度。另一方面，比1質量%還多時，若在被蝕刻基體中使用玻璃，則有腐蝕玻璃之情況。
本發明之蝕刻液組成物中所用的(C)以上述通式(I)表示的有機磺酸(以下，亦簡稱(C)成分)中，R表示碳原子數1~4的烷基、碳原子數1~4的羥基烷基、碳原子數6~10的芳基、碳原子數6~10的羥基芳基。
作為上述碳原子數1~4的烷基，可舉出甲基、乙基、丙基、異丙基、丁基、第二丁基、第三丁基。還有，此處的「烷基」係指非取代烷基。
作為上述碳原子數1~4的羥基烷基，可舉出羥基甲基、1-羥基乙基、2-羥基乙基、1-羥基丙基、2-羥基丙基、3-羥基丙基、1-羥基異丙基、2-羥基異丙基、1-羥基丁基、2-羥基丁基、3-羥基丁基、4-羥基丁基等。
作為上述碳原子數6~10的芳基，可舉出苯基、苄基、甲苯基、鄰二甲苯基、間二甲苯基、對二甲苯基等。
作為上述碳原子數6~10的羥基芳基，可舉出2-羥基苯基、3-羥基苯基、4-羥基苯基等。
作為本發明之蝕刻液組成物中使用的(C)成分，並沒有特別的限定，例如宜使用甲磺酸、乙磺酸、羥基甲磺酸、2-羥基乙磺酸、苯磺酸、鄰甲苯磺酸、間甲苯磺酸、對甲苯磺酸、2-羥基乙磺酸、鄰苯酚磺酸、間苯酚磺酸、對苯酚磺酸及此等的鹽等。於此等之中，當使用甲磺酸、2-羥基乙磺酸、苯磺酸、對甲苯磺酸、對苯酚磺酸及此等的鹽時，即使銅溶出至蝕刻液組成物中時，也可在蝕刻處理後得到所欲的形狀之細線而較佳，其中2-羥基乙磺酸、苯磺酸及此等的鹽係其效果特別高而較佳。作為上述之鹽，較佳為使用以鈉鹽、鉀鹽、鋰鹽等為代表的鹼金屬鹽。
本發明之蝕刻液組成物中的(C)成分之濃度
係以有機磺酸換算為0.1~20質量%之範圍。(C)成分之濃度係可按照所欲的作為被蝕刻材之積層有鈦系層與銅系層的積層體之厚度或寬度，於上述濃度範圍內適宜調節，但較佳為0.5~15質量%，更佳為1~10質量%。(C)成分之濃度若比0.1質量%還少，則在長時間連續使用蝕刻液時，有蝕刻能力鈍化之情況。另一方面，(C)成分之濃度比20質量%還多時，有蝕刻速度的控制變困難之情況。(C)成分亦可混合2種類以上的化合物而使用，但較佳為僅使用1種類的化合物之情況。
說明本發明之蝕刻液組成物中所用的(D)自唑系化合物及在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物所選出的至少1種化合物(以下，亦簡稱(D)成分)。
上述唑系化合物係沒有特別的限定，只要是在構造中具有含有1個以上的氮原子且具有2個雙鍵之雜5員環的化合物即可，但較佳為碳數1~3的唑系化合物，更佳為碳數1或2的唑系化合物。例如，可舉出以1-甲基吡咯為代表的烷基吡咯及吡咯等之唑化合物；以1-甲基咪唑為代表的烷基咪唑、腺嘌呤、1,3-咪唑(以下，亦簡稱咪唑)及吡唑等之二唑化合物；1,2,4-三唑、5-甲基-1H-苯并三唑及1H-苯并三唑(以下，亦簡稱苯并三唑)及3-胺基-1H-三唑等之三唑化合物；1H-四唑、5-甲基-1H-四唑、5-苯基-1H-四唑及5-胺基-1H-四唑(以下，亦簡稱5-胺基四唑)等之四唑化合物；1,3-噻唑、4-甲基噻
唑及異噻唑等之噻唑化合物、異
唑等之
唑化合物。於此等之中，較佳為腺嘌呤、三唑化合物及四唑化合物，其中特佳為1,2,4-三唑、3-胺基-1H-三唑、1H-四唑、5-甲基-1H-四唑及5-胺基四唑。
上述在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物(以後，亦稱為「吡啶系化合物」)係沒有特別的限定，只要是在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物即可，但較佳為碳數2~10的吡啶系化合物，更佳為碳數2~7的吡啶系化合物。例如，可舉出以2-甲基吡啶為代表的烷基吡啶化合物、以2-胺基吡啶及2-(2-胺基乙基)吡啶為代表的胺基吡啶化合物、吡啶、吡
、嘧啶、嗒
、三
及四
，較佳為胺基吡啶化合物，其中特佳為2-胺基吡啶。
本發明之蝕刻液組成物中的(D)成分之濃度為0.01~5質量%之範圍。(D)成分之濃度係可按照所欲的作為被蝕刻材之積層有鈦系層與銅系層的積層體之厚度或寬度，於上述濃度範圍內適宜調節，特佳為0.05~2質量%。未達0.01質量%時，於蝕刻後所得之細線的剖面形狀中，有得到細線上部的寬度為細線下部的寬度以上之細線的情況。另一方面，即使添加超過5質量%之量，也看不到配合效果的提高。上述(D)成分之濃度係在單獨使用唑系化合物或吡啶系化合物使用時，意指唑系化合物或吡啶系化合物之濃度，在混合使用唑系化合物或吡啶系
化合物時，意指唑系化合物或吡啶系化合物之濃度的和。混合使用唑系化合物與吡啶系化合物時的唑系化合物與吡啶系化合物之濃度比率較佳為1：30~30：1之範圍，更佳為1：25~25：1之範圍的情況，1：5~5：1之範圍的情況由於添加效果特別高而特佳。(D)成分亦可混合使用2種類以上的化合物，但較佳為僅使用1種類的化合物之情況。
又，於本發明之蝕刻液組成物中，除了上述(A)成分、(B)成分、(C)成分及(D)成分，在不妨礙本發明的效果之範圍內，還可摻合周知的添加劑。作為該添加劑，可舉出蝕刻液組成物之安定化劑、各成分的可溶化劑、消泡劑、pH調整劑、比重調整劑、黏度調整劑、潤濕性改善劑、螯合劑、氧化劑、還原劑、界面活性劑等，使用此等時的濃度一般為0.001質量%~50質量%之範圍。
作為上述pH調整劑，例如可舉出鹽酸、硫酸及硝酸等之無機酸及彼等之鹽、水溶性的有機酸及彼等之鹽、氫氧化鋰、氫氧化鈉、氫氧化鉀等之氫氧化鹼金屬類、氫氧化鈣、氫氧化鍶、氫氧化鋇等之氫氧化鹼土類金屬類、碳酸銨、碳酸鋰、碳酸鈉、碳酸鉀等的鹼金屬之碳酸鹽類、碳酸氫鈉、碳酸氫鉀等的鹼金屬之碳酸氫鹽類、氫氧化四甲銨、膽鹼等之氫氧化四級銨類、乙胺、二乙胺、三乙胺、羥基乙胺等之有機胺類、碳酸氫銨、氨，以1種類或2種類以上的混合物使用。使用此等時，以成為
所欲的pH之方式添加即可。本案發明的蝕刻液組成物宜為pH1~3之範圍內，特佳為pH1~2之範圍內。pH若比1還低，則銅的蝕刻速度會過快而有控制變困難之情況。pH比3還高時，不僅使過氧化氫的安定性降低，而且銅尤其鈦的溶解速度變極慢，有蝕刻費時之情況。
作為上述界面活性劑，可添加非離子性界面活性劑、陽離子性活性劑及兩性界面活性劑之1種或2種以上。作為非離子性界面活性劑，例如可舉出聚氧化烯烷基醚、聚氧化烯烯基醚、聚氧乙烯聚氧丙烯烷基醚(環氧乙烷與環氧丙烷之附加形態係可為無規狀、嵌段狀之任一者)、聚乙二醇環氧丙烷加成物、聚丙二醇環氧乙烷加成物、烷二胺的環氧乙烷與環氧丙烷之無規或嵌段加成物、甘油脂肪酸酯或其環氧乙烷加成物、山梨醇酐脂肪酸酯、聚氧乙烯山梨醇酐脂肪酸酯、烷基聚葡萄糖苷、脂肪酸單乙醇醯胺或其環氧乙烷加成物、脂肪酸-N-甲基單乙醇醯胺或其環氧乙烷加成物、脂肪酸二乙醇醯胺或其環氧乙烷加成物、蔗糖脂肪酸酯、烷基(聚)甘油醚、聚甘油脂肪酸酯、聚乙二醇脂肪酸酯、脂肪酸甲基酯乙氧基化物、N-長鏈烷基二甲基胺氧化物等。其中，使用烷二胺的環氧乙烷與環氧丙烷之無規或嵌段加成物時，所得之細線的直線性良好，蝕刻液的保存安定性良好而較佳。於烷二胺的環氧乙烷與環氧丙烷之無規或嵌段加成物之中使用反向型時，由於低起泡性而更佳。作為陽離子性界面活性劑，例如可舉出烷基(烯基)三甲基銨鹽、二烷基(烯基)二甲
基銨鹽、烷基(烯基)四級銨鹽、含有醚基或酯基或醯胺基的單或二烷基(烯基)四級銨鹽、烷基(烯基)吡啶鎓鹽、烷基(烯基)二甲基苄基銨鹽、烷基(烯基)異喹啉鎓鹽、二烷基(烯基)嗎啉鎓鹽、聚氧乙烯烷基(烯基)胺、烷基(烯基)胺鹽、多胺脂肪酸衍生物、戊醇脂肪酸衍生物、氯化苄烷胺(benzalkonium chloride)、氯化本索寧(benzethonium chloride)等。作為兩性界面活性劑，例如可舉出羧基甜菜鹼、磺基甜菜鹼、磷醯基甜菜鹼、醯胺胺基酸、咪唑啉鎓甜菜鹼系界面活性劑等。使用此等時的濃度一般為0.001質量%~10質量%之範圍。
本發明之蝕刻液組成物之上述成分以外的成分為(E)水。較佳為含有必須量的上述成分之水溶液的情況。
作為使用本發明之蝕刻劑組成物將在基體上積層有鈦系層與銅系層之積層體的鈦系層與銅系層予以一併蝕刻用之蝕刻方法，並沒有特別的限定，可使用周知一般的蝕刻方法。例如，可舉出浸漬式、噴霧式、旋轉式的蝕刻方法。
例如，藉由噴霧式的蝕刻方法，將在玻璃基板上依順序積層有鈦、銅之基體予以蝕刻時，可以適當的條件，將本發明之蝕刻液組成物噴霧到該基材，而在玻璃基板上蝕刻鈦被膜及銅被膜。
蝕刻條件係沒有特別的限定，可按照蝕刻對象的形狀或膜厚等而任意設定。例如，噴霧條件較佳為
0.01Mpa~0.2Mpa，特佳為0.01Mpa~0.1MPa。又，蝕刻溫度較佳為10℃~50℃，特佳為20℃~50℃。蝕刻劑之溫度由於會隨著反應熱而上升，若須要的話可藉由能維持在上述溫度範圍內的眾所周知之手段進行溫度控制。又，蝕刻時間係沒有特別的限定，只要是能將刻蝕刻對象予以完全蝕的充分必要之時間即可。例如，若為膜厚1μm左右、線寬度10μm左右及開口部100μm左右之蝕刻對象，則在上述溫度範圍內較佳為進行10~300秒左右之蝕刻。
本發明之蝕刻液組成物及使用該組成物之蝕刻方法，係主要在加工液晶顯示器、電漿顯示器、觸控面板、有機EL、太陽電池、照明器具等之電極或配線時使用。
以下，藉由實施例及比較例更詳細地說明本發明，惟本發明不受此等所限定。
以表1中所示的配合，摻合蝕刻液組成物，得到實施例組成物No.1~11。於實施例組成物中，去除表1所示的(A)~(D)成分，剩餘部分為水。
以表2中所示的配合，摻合蝕刻液組成物，得到比較組成物1~3。於比較例組成物中，去除表2所示的(A)~(D)成分，剩餘部分為水。
將於玻璃基板上依順序積層有鈦(30nm)、銅(400nm)之基體上使用正型液狀光阻形成有線寬度10μm、開口部100μm的光阻圖型之基板切斷成10mm×10mm而準備複數片的小板片，將此等當作試片。對於此試片，使用以指定濃度溶解有銅的實施例組成物No.1~13，於35℃之條件下進行藉由浸漬法的圖型蝕刻。蝕刻處理時間係於各個蝕刻液組成物中，僅以目視能確認配線間的銅殘渣變無之時間來實施。蝕刻處理時間皆3分鐘以內。
使用與實施例2同樣之方法，使用比較組成物1~3，進行圖型蝕刻。
對於經由實施例2及比較例1所得之試片，以光學顯微鏡確認該試片的上部，確認是否形成細線，再使用FE-SEM確認剖面的形狀。
於評價時，當各蝕刻液組成物中的銅濃度成為指定濃度時，評價經蝕刻處理的試片。表3~5中顯示結果。將形成細線下部的寬度比細線上部的寬度更大的剖面形狀之情況當作○，將形成細線下部的寬度比細線上部的寬度更小的剖面形狀之情況當作×。又，將配線的單側之細寬度未達1.0μm之情況當作++，將1.0μm以上~未達2.0μm之情況當作+，將2.0μm以上之情況及無法形成細線之情況當作--。
※1：即使5分鐘以上蝕刻處理，也不充分地蝕刻被蝕刻材，無法形成細線。
※2：無法控制蝕刻速度，被蝕刻材之全部係於數秒溶解，無法形成配線。
根據表3~5之結果，評價例1-1~1-39皆能形成細線下部的寬度比細線上部的寬度更大的剖面形狀之配線。其中，評價例1-7及1-11係於蝕刻液中的銅濃度為5000ppm之情況中亦能形成所欲的配線，而且配線之細寬度亦小。另一方面，比較例1~9皆無法形成配線。
Claims (4)
- 一種蝕刻液組成物，其係將位於基體上且含有至少1種的鈦系層及至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻用之蝕刻液組成物，包含：(A)過氧化氫0.1~15質量%；(B)氟化物離子供給源0.01~1質量%；(C)2-羥基乙磺酸0.1~20質量%；(D)自唑系化合物及在構造中具有含有1個以上的氮原子且具有3個雙鍵之雜6員環的化合物所選出的至少1種化合物0.01~5質量%；及，(E)水。
- 如請求項1之蝕刻液組成物，其中前述(D)係選自由1,2,4-三唑、3-胺基-1H-三唑、1H-四唑、5-甲基-1H-四唑及5-胺基四唑所成之群組的至少1個化合物。
- 一種蝕刻方法，其係將位於基體上且含有至少1種的鈦系層及至少1種的銅系層之積層體的鈦系層與銅系層予以一併蝕刻用之蝕刻方法，包含使用如請求項1或2之蝕刻液組成物。
- 一種蝕刻方法，其包含使用如請求項1或2之蝕刻液組成物，將作為位於基體上且含有至少1種的鈦系層及至少1種的銅系層之積層體的被蝕刻材之鈦系層與銅系層予以一併蝕刻後，再使用該蝕刻液組成物，一併蝕刻別的被蝕刻材。
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| CN (1) | CN108028198B (zh) |
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| JP6746518B2 (ja) * | 2017-03-10 | 2020-08-26 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
| KR20190027019A (ko) * | 2017-09-04 | 2019-03-14 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴과 박막 트랜지스터 기판 제조 방법 |
| SG11202103910PA (en) * | 2018-11-15 | 2021-05-28 | Entegris Inc | Silicon nitride etching composition and method |
| CN111719157B (zh) * | 2019-03-20 | 2024-06-07 | 易安爱富科技有限公司 | 蚀刻组合物及利用其的蚀刻方法 |
| JP2020202320A (ja) * | 2019-06-12 | 2020-12-17 | 関東化学株式会社 | 過酸化水素分解抑制剤 |
| CN115428129A (zh) * | 2020-04-14 | 2022-12-02 | 三菱瓦斯化学株式会社 | 钛和/或钛合金的蚀刻液、使用该蚀刻液的钛和/或钛合金的蚀刻方法、以及使用该蚀刻液的基板的制造方法 |
| CN111718717A (zh) * | 2020-06-15 | 2020-09-29 | 江苏中德电子材料科技有限公司 | 有源矩阵有机发光二极体用氧化层缓冲蚀刻液的制备方法 |
| CN115141629B (zh) * | 2022-06-15 | 2023-06-02 | 湖北兴福电子材料股份有限公司 | TiN去除液 |
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| KR100839428B1 (ko) | 2007-05-17 | 2008-06-19 | 삼성에스디아이 주식회사 | 식각액, 및 이를 이용한 박막트랜지스터를 갖는 기판의제조 방법 |
| KR101608873B1 (ko) | 2010-03-18 | 2016-04-05 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
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- 2016-08-23 KR KR1020187003340A patent/KR102500812B1/ko active IP Right Grant
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| TW480611B (en) * | 1999-06-18 | 2002-03-21 | Lg Philips Lcd Co Ltd | Etching agent, production of substrate for electronic equipment using the same and electronic equipment |
| TW201042009A (en) * | 2009-03-30 | 2010-12-01 | Toray Industries | Conductive film remover and method for removing conductive film |
| TW201134983A (en) * | 2010-01-28 | 2011-10-16 | Mitsubishi Gas Chemical Co | Etching liquid for copper/titanium based multilayer film |
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| Publication number | Publication date |
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| JP6807845B2 (ja) | 2021-01-06 |
| JPWO2017033915A1 (ja) | 2018-06-14 |
| KR20180048595A (ko) | 2018-05-10 |
| KR102500812B1 (ko) | 2023-02-16 |
| US20180237923A1 (en) | 2018-08-23 |
| CN108028198B (zh) | 2022-10-18 |
| WO2017033915A1 (ja) | 2017-03-02 |
| CN108028198A (zh) | 2018-05-11 |
| TW201724262A (zh) | 2017-07-01 |
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