TWI697980B - 半導體製造裝置及半導體製造方法 - Google Patents

半導體製造裝置及半導體製造方法 Download PDF

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TWI697980B
TWI697980B TW107123708A TW107123708A TWI697980B TW I697980 B TWI697980 B TW I697980B TW 107123708 A TW107123708 A TW 107123708A TW 107123708 A TW107123708 A TW 107123708A TW I697980 B TWI697980 B TW I697980B
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transfer plate
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semiconductor manufacturing
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丹羽恵一
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日商東芝記憶體股份有限公司
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Abstract

本發明之一態樣提供一種能夠防止使用轉印板時之焊料連接不良之半導體製造裝置及半導體製造方法。 實施形態之半導體製造裝置具備：轉印板，其具有將助焊劑轉印至半導體基板上之複數個焊盤之複數個轉印針；支持體，其與轉印板一體移動自如地支持轉印板；定位機構，其以對應之轉印針接觸於複數個焊盤之各者之方式將支持體定位；及間隔調整部，其調整複數個轉印針中之至少一部分轉印針之間隔。

Description

半導體製造裝置及半導體製造方法
本發明之實施形態係關於一種半導體製造裝置及半導體製造方法。
半導體基板上之複數個焊盤係為了焊接而設置，為使導電性良好而由Cu形成。為防止Cu氧化，焊盤之表面預先以OSP(Organic Solderability Preservative，有機可焊性保護劑)膜覆蓋。若為附著有OSP膜之狀態，則無法焊接，因此要進行將助焊劑轉印至焊盤而去除OSP膜，然後進行焊接之製程。
存在為了將助焊劑一起轉印至半導體基板上之複數個焊盤而使用具有複數個轉印針之轉印板之情形。轉印板上之複數個轉印針之數量與針間隔按照轉印對象之半導體基板之焊盤數量或間隔而預先設計。
然而，半導體基板之製造製程中通常包含熱處理等加熱處理之製程，有半導體基板上之複數個焊盤之間隔受到熱之影響而不均一地變動之虞。尤其是，根據半導體基板之厚度或材料等不同，半導體基板相對於溫度之伸縮量發生變動。又，半導體基板之體積膨脹率會根據製造批次不同而變動，故即便於賦予相同溫度之情形時，亦有半導體基板之伸縮量發生變動之虞。
若半導體基板之伸縮量發生變動，則焊盤間隔根據部位而變動，有轉印針之中心位置偏離焊盤之中心位置而接觸之虞。於此情形時，無法將助焊劑轉印至焊盤之整個區域，而於焊盤之一部分殘留有OSP膜。若OSP膜殘留，則有焊盤中之焊料之接觸面積變窄，產生焊料連接不良之虞。
本發明之一態樣提供一種能夠防止使用轉印板時之焊料連接不良之半導體製造裝置及半導體製造方法。
根據本實施形態，提供一種半導體製造裝置，其具備： 轉印板，其具有將助焊劑轉印至半導體基板上之複數個焊盤之複數個轉印針； 支持體，其與上述轉印板一體移動自如地支持上述轉印板； 定位機構，其以對應之上述轉印針接觸於上述複數個焊盤各者之方式將上述支持體定位；及 間隔調整部，其調整上述複數個轉印針中之至少一部分轉印針之間隔。
以下，參照圖式對本發明之一實施形態進行說明。再者，於本案說明書隨附之圖式中，為了容易理解圖示，根據實物適當地變更比例尺及縱橫尺寸比等而誇張表示。
進而，關於本說明書中使用之形狀或幾何學條件以及特定出其等程度之例如「平行」、「正交」、「相同」等用語或長度、角度之值等，並不約束為嚴格之含義，而解釋為包含可期待相同功能之程度之範圍。
圖1係模式性地表示一實施形態之半導體製造裝置1之特徵性構成之圖。圖1之半導體製造裝置1具備於球搭載製程中將助焊劑轉印至半導體基板上之複數個焊盤之功能，圖1中示出了用以實現該功能之構成。圖1中，省略了半導體裝置之層構造之製作或圖案化等相關之構成。圖1之半導體製造裝置1能夠應用於製造具有複數個焊盤之各種半導體裝置，半導體裝置之具體種類或用途不限。
圖1之半導體製造裝置1具備轉印板2、支持體3、定位機構4及間隔調整部5。
轉印板2具有將助焊劑轉印至半導體基板上之複數個焊盤之複數個轉印針6。轉印板2於如圖2A所示般被定位於助焊劑浴7之上方之後，如圖2B所示般使轉印針6接觸於助焊劑浴7。藉此，如圖2C所示，於轉印針6之前端部附著有助焊劑8。繼而，轉印板2於如圖2D所示般被定位於半導體基板9之上方之後，如圖2E所示般使對應之轉印針6接觸於半導體基板9上之焊盤10。藉此，如圖2F所示，將助焊劑8轉印至焊盤10。
支持體3與轉印板2一體移動自如地支持轉印板2。例如，支持體3一體地接合於轉印板2，使支持體3於水平方向上移動而能夠進行轉印針6與焊盤10之位置對準，又，能夠藉由使支持體3於例如鉛垂方向上移動，而使轉印針6接觸於焊盤10。
定位機構4係藉由使支持體3於水平方向及鉛垂方向移動，而進行複數個焊盤10與複數個轉印針6之定位。又，定位機構4亦可使載置半導體基板9之未圖示之載台於水平方向上移動。定位機構4之詳細構成不拘，例如，亦能以半導體基板9上之對準位置為基準，進行焊盤10與轉印針6之定位。
間隔調整部5調整複數個轉印針6中之至少一部分轉印針6之間隔。間隔調整部5例如藉由對轉印板2或支持體3賦予熱及拉伸應力之至少一者而調整至少一部分轉印針6之間隔。
更具體而言，間隔調整部5可具有對轉印板2及支持體3之至少一者進行加熱之加熱器。於此情形時，加熱器能以轉印板2上之複數個轉印針6中之轉印板2之周緣部側之轉印針6的間隔寬於中央部側之轉印針6的間隔之方式，配置於轉印板2及支持體3之周緣部附近。包含加熱器等之間隔調整部5於定位機構4之控制下與轉印板2及支持體3一體地移動。
圖3A及圖3B係表示配置於轉印板2之周緣部附近之加熱器11之一例之圖。圖3A係轉印板2周邊之俯視圖，圖3B係圖3A之A-A線剖視圖。圖3A表示與矩形狀之轉印板2之4個端面對向而配置加熱器11之例。圖3A雖示出了與轉印板2之4個端面對向而設置4個加熱器11之例，但亦可設置包圍轉印板2之4個端面之環形狀態之1個加熱器11。又，亦可僅於轉印板2之長邊方向之兩端部側設置2個加熱器11。
如圖3A及圖3B所示，藉由沿著轉印板2之周緣部配置加熱器11，轉印板2之周緣部側因熱而膨脹，從而可使轉印板2上之複數個轉印針6中之周緣部側之轉印針6的間隔寬於中央部之轉印針6的間隔。
再者，加熱器11亦可如圖4所示般配置於支持體3之周緣部附近，以代替配置於轉印板2之周緣部附近。圖4之情形時，轉印板2一體地接合於支持體3，故若支持體3之周緣部因熱而膨脹，則轉印板2亦同樣地膨脹，從而可使轉印板2上之複數個轉印針6中之周緣部側之轉印針6的間隔較中央部之轉印針6的間隔寬。
如此，間隔調整部5藉由例如加熱器11之加熱，而調整轉印板2上之至少一部分轉印針6之間隔。線膨脹率[ppm]因轉印板2之材料不同而異。物體之長度L之伸縮量ΔL使用線膨脹率α與溫度上升ΔT由以下之(1)式表示。 ∆L=αL∆T (1)
附著助焊劑8或焊料時之回焊製程中之溫度(回焊溫度)為260℃左右，認為不會對半導體裝置施加高於回焊溫度之溫度。作為半導體基板9之材料之阻焊劑或核心材之玻璃轉移溫度為約150℃，認為可能對半導體基板9賦予之最大溫度為150℃以下。因此，於本實施形態中，假設可能將半導體基板9以最大為150℃左右加熱，估測半導體基板9之膨脹程度，依照該膨脹程度而調整轉印板2上之轉印針6之間隔。
圖5A表示焊盤10與轉印針6未發生位置偏移之例，圖5B表示焊盤10與轉印針6發生了位置偏移之例。圖5B會於例如半導體基板9因製造製程之加熱處理等而膨脹時發生。於半導體基板9上，抗蝕膜12被圖案化而形成，於藉由圖案化去除了抗蝕膜12之部位，露出有OSP膜13。圖5C表示在發生了圖5B之位置偏移時利用轉印針6進行助焊劑8轉印之例。於此情形時，無法對焊盤10之整個區域轉印助焊劑8，而僅對焊盤10之一部分轉印了助焊劑8。若於此種狀態下進行回焊及洗淨，則會如圖5D所示般於焊盤10之一部分殘留有OSP膜13。若於殘留有OSP膜13之狀態下安裝焊球14，則如圖5E所示，於殘留有OSP膜13之部位，焊球14未接觸於焊盤10之Cu，而產生焊料之連接不良。
半導體基板9上之焊盤10之位置偏移量理想為以半導體基板9上之對準位置為基準。圖6表示以半導體基板9上之基準位置(例如中心位置)為對準位置，根據至對角方向之角部之焊盤10為止之距離之偏移而估測焊盤10之位置偏移量之方法的圖。圖6之例中，將自對準位置至對角上之角部之焊盤10為止之距離之設計值設為60 mm。例如，於某批次之複數個半導體基板9中之自對準位置至對角上之角部之焊盤10為止之距離之實測值為60.05~60.08 mm之情形時，位置偏移量成為50~80 μm。
圖7係針對線膨脹率不同之複數個材料表示溫度與伸長量之對應關係之圖表。圖7之圖表係針對線膨脹率α=18、30、50、70 ppm之各材料表示出溫度為0℃~120℃之範圍內之伸長量。根據圖7，為了修正伸長量50~80 μm，理想為線膨脹率α=30 ppm左右之材料。
圖7為一例，焊盤10之位置偏移量根據半導體基板9之材料或溫度不同而變動，因此，較理想為利用圖6之方法實際測量焊盤10之位置偏移量，根據其實測值調整加熱器11之溫度及加熱時間。又，於僅由加熱器11之溫度或加熱時間無法使轉印針6之伸長量與焊盤10之位置偏移量一致之情形時，較理想為變更要利用加熱器11加熱之轉印板2或支持基板之材料。
圖8係表示關於複數個材料之線膨脹率、50℃下之伸長量及75℃下之伸長量之對應關係之圖。如圖8所示，線膨脹率根據材料不同而存在較大差異，根據該線膨脹率不同，50℃與75℃下之伸長量亦存在差異。圖8之材料中，最接近圖7結果之材料係杜拉鋁。再者，圖7係假設50~100℃下之伸長量為50~80 μm之情形，杜拉鋁未必始終最佳。
圖9係表示本實施形態之半導體製造裝置1之球搭載製程之流程圖。圖9之球搭載製程大致劃分包含OSP膜13之去除製程、焊球安裝製程、焊料不良檢查製程該等3個製程。焊料不良檢查製程並非對所有半導體裝置進行，故非必需製程。
於開始圖9之流程圖之處理之前，已完成了半導體裝置之製造。首先，判定半導體裝置上之複數個焊盤10中之至少一部分焊盤10之間隔是否偏離設計值(步驟S1)。該判定處理只要利用相機拍攝半導體裝置之安裝面側，對其拍攝圖像進行解析而判斷焊盤10間隔之實測值與設計值是否超過特定閾值即可。於一批次中存在複數個半導體裝置之情形時，亦可針對其中一個半導體裝置進行步驟S1之判定處理，將其判定結果應用於同一批次內之其餘半導體裝置。
若於步驟S1中判定為偏移，則利用間隔調整部5調整轉印板2之至少一部分轉印針6之間隔，例如對轉印板2或支持體3進行加熱等(步驟S2)。關於間隔調整部5，利用間隔調整部5調整轉印針6之間隔，直至半導體裝置上之複數個焊盤10與轉印板2之複數個轉印針6之位置偏移減小至實用上不成問題之程度為止。
當步驟S2之處理結束之情形時，或者步驟S1中判定為未偏移之情形時，使轉印板2上之複數個轉印針6接觸於半導體裝置上之複數個焊盤10，將助焊劑8轉印至焊盤10(步驟S3)。
繼而，以特定溫度進行回焊處理(步驟S4)。藉由進行回焊處理，OSP膜13與助焊劑反應而被去除。繼而，進行洗淨處理(步驟S5)。藉此，助焊劑8自焊盤10被去除。以上之步驟S3~S5為OSP膜13之去除製程。
繼而，使轉印板2之複數個轉印針6再次接觸於半導體裝置之複數個焊盤10，將助焊劑8轉印至焊盤10(步驟S6)。若於步驟S1中使用間隔調整部5進行轉印針6之間隔調整，則於步驟S6中無須利用間隔調整部5進行間隔調整。
繼而，使焊球附著於助焊劑8上(步驟S7)。繼而，以特定溫度進行回焊處理，使焊球接觸於焊盤10(步驟S8)。繼而，進行洗淨而去除助焊劑8(步驟S9)。以上之步驟S6~S9為焊球安裝製程。
然後，判定是否進行半導體裝置之檢查(步驟S10)，如要進行檢查，將接合於半導體裝置之複數個焊盤10之焊球加熱而去除(步驟S11)。繼而，拍攝半導體裝置之安裝面側，藉由拍攝圖像之圖像解析而確認有無OSP膜13殘留(步驟S12)。
於上述之例中，對間隔調整部5以加熱器11加熱轉印板2或支持體3而調整至少一部分轉印針6之間隔之例進行了說明，但間隔調整部5亦可調整施加至轉印板2或支持體3之應力而調整轉印針6之間隔。
圖10係表示間隔調整部5具有應力調整構件15之例之圖。圖10之應力調整構件15具有安裝於轉印板2之四角之4個應力賦予部16。該等應力賦予部16對轉印板2在對角方向上賦予拉伸應力。若對四角施加相同之應力，則轉印板2均等地膨脹，因此，對於應力賦予部16較理想為藉由未圖示之馬達之相同之驅動力來驅動應力賦予部16。應力賦予部16與使用加熱器11時同樣地，實際測量自半導體裝置之對準位置至四角之焊盤10之角部為止之距離，檢測與設計值之位置偏移，以使轉印針6之間隔伸長相當於該位置偏移量之方式，以應力賦予部16對轉印板2賦予拉伸應力。根據轉印板2之材料或厚度不同，使轉印板2伸長單位長度所需之應力存在差異，因此，較理想為事先對所要使用之轉印板2求出拉伸應力與伸長量之對應關係。
再者，圖10中，於轉印板2之四角安裝有應力賦予部16，但應力賦予部16之安裝部位並不限定於轉印板2之四角。例如，亦可於矩形狀之轉印板2之各邊之中央安裝應力賦予部16。
如此，於本實施形態中，在半導體基板9因半導體製造製程之加熱處理膨脹而至少一部分焊盤10之間隔較設計值寬之情形時，藉由對轉印板2或支持體3進行加熱或賦予應力等，將轉印針6之間隔擴寬。藉此，能夠抑制焊盤10與轉印針6之位置偏移，能夠將助焊劑8轉印至焊盤10之整個區域，因此，能夠防止在焊盤10內殘留OSP膜13之不良狀況。
已對本發明之若干實施形態進行了說明，但該等實施形態係作為示例而提出，並不意圖限定發明之範圍。該等新穎之實施形態能以其他各種形態加以實施，且可於不脫離發明之主旨之範圍內進行各種省略、替換、變更。該等實施形態或其變化包含於發明之範圍或主旨中，並且包含於申請專利範圍所記載之發明及其均等之範圍內。
[相關申請案] 本申請案享有以日本專利申請案2018-53261號(申請日：2018年3月20日)為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
1‧‧‧半導體製造裝置2‧‧‧轉印板3‧‧‧支持體4‧‧‧定位機構5‧‧‧間隔調整部6‧‧‧轉印針7‧‧‧助焊劑浴8‧‧‧助焊劑9‧‧‧半導體基板10‧‧‧焊盤11‧‧‧加熱器12‧‧‧抗蝕膜13‧‧‧OSP膜14‧‧‧焊球15‧‧‧應力調整構件16‧‧‧應力賦予部S1‧‧‧步驟S2‧‧‧步驟S3‧‧‧步驟S4‧‧‧步驟S5‧‧‧步驟S6‧‧‧步驟S7‧‧‧步驟S8‧‧‧步驟S9‧‧‧步驟S10‧‧‧步驟S11‧‧‧步驟S12‧‧‧步驟
圖1係模式性地表示一實施形態之半導體製造裝置之特徵性構成之圖。 圖2A係表示將助焊劑轉印至焊盤之製程順序之圖。 圖2B係表示繼圖2A後之製程之圖。 圖2C係表示繼圖2B後之製程之圖。 圖2D係表示繼圖2C後之製程之圖。 圖2E係表示繼圖2D後之製程之圖。 圖2F係表示繼圖2E後之製程之圖。 圖3A係表示配置於轉印板2之周緣部附近之加熱器11之一例之俯視圖。 圖3B係圖3A之A-A線剖視圖。 圖4係於支持體之周緣部附近配置有加熱器之圖。 圖5A係表示焊盤與轉印針未發生位置偏移之例之圖。 圖5B係表示焊盤與轉印針發生位置偏移之例之圖。 圖5C係表示於發生圖5B之位置偏移時利用轉印針進行助焊劑轉印之例之圖。 圖5D係表示於焊盤之一部分殘留OSP膜之情形之圖。 圖5E係表示焊球之一部分因存在OSP膜而未與焊盤接觸之狀態之圖。 圖6係說明估測焊盤之位置偏移之方法之圖。 圖7係針對線膨脹率不同之複數個材料表示溫度與伸長量之對應關係之圖表。 圖8係表示關於複數個材料之線膨脹率、50℃下之伸長量及75℃下之伸長量之對應關係之圖。 圖9係表示本實施形態之半導體製造裝置1之球搭載製程之流程圖。 圖10係表示間隔調整部具有應力調整構件之例之圖。
1‧‧‧半導體製造裝置
2‧‧‧轉印板
3‧‧‧支持體
4‧‧‧定位機構
5‧‧‧間隔調整部
6‧‧‧轉印針

Claims (6)

  1. 一種半導體製造裝置，其具備： 轉印板，其具有將助焊劑轉印至半導體基板上之複數個焊盤之複數個轉印針； 支持體，其與上述轉印板一體移動自如地支持上述轉印板； 定位機構，其以對應之上述轉印針接觸於上述複數個焊盤各者之方式將上述支持體定位；及 間隔調整部，其調整上述複數個轉印針中之至少一部分轉印針之間隔。
  2. 如請求項1之半導體製造裝置，其中上述間隔調整部具有對上述轉印板及上述支持體之至少一者進行加熱之加熱器。
  3. 如請求項2之半導體製造裝置，其中上述加熱器係以上述複數個轉印針中之上述轉印板之周緣部側之轉印針的間隔寬於中央部側之轉印針的間隔之方式，配置於上述轉印板及上述支持體之端部側。
  4. 如請求項2或3之半導體製造裝置，其中上述加熱器以包圍上述轉印板之周緣部之方式配置， 上述支持體將上述轉印板及上述加熱器一體移動自如地支持。
  5. 如請求項1之半導體製造裝置，其中上述間隔調整部具有對上述轉印板及上述支持體之至少一者賦予拉伸應力之應力賦予部。
  6. 一種半導體製造方法，其具備如下步驟： 調整具有複數個轉印針之轉印板上的上述複數個轉印針中之至少一部分轉印針之間隔，該等複數個轉印針將助焊劑轉印至半導體基板上之複數個焊盤；及 使上述間隔調整後之上述複數個轉印針各者接觸於對應之焊盤，將附著於上述複數個轉印針之前端部之助焊劑轉印至上述複數個焊盤。
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