CN110310902A - 半导体制造装置及半导体制造方法 - Google Patents

半导体制造装置及半导体制造方法 Download PDF

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CN110310902A
CN110310902A CN201810847558.1A CN201810847558A CN110310902A CN 110310902 A CN110310902 A CN 110310902A CN 201810847558 A CN201810847558 A CN 201810847558A CN 110310902 A CN110310902 A CN 110310902A
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transfer
transfer plate
interval
needle
semiconductor
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丹羽恵一
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Kioxia Corp
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Toshiba Memory Corp
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Abstract

本发明的一形态提供一种能够防止使用转印板时的焊料连接不良的半导体制造装置及半导体制造方法。实施方式的半导体制造装置具备：转印板，具有将助焊剂转印到半导体衬底上的多个焊盘的多个转印针；支撑体，支撑转印板并与转印板一体地自由移动；定位机构，以对应的转印针接触于多个焊盘的每一个的方式定位支撑体；以及间隔调整部，调整多个转印针中的至少一部分转印针的间隔。

Description

半导体制造装置及半导体制造方法
[相关申请]
本申请享有以日本专利申请2018-53261号(申请日：2018年3月20日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
本发明的实施方式涉及一种半导体制造装置及半导体制造方法。
背景技术
半导体衬底上的多个焊盘是为了焊接而设置，为使导电性良好而由Cu形成。为防止Cu氧化，焊盘的表面预先以OSP(Organic Solderability Preservative，有机可焊性保护剂)膜覆盖。如果为附着有OSP膜的状态，那么无法焊接，所以要进行将助焊剂转印到焊盘而去除OSP膜，然后进行焊接的制程。
存在为了将助焊剂一起转印到半导体衬底上的多个焊盘而使用具有多个转印针的转印板的情况。转印板上的多个转印针的数量与针间隔按照转印对象的半导体衬底的焊盘数量或间隔而预先设计。
然而，半导体衬底的制造制程中通常包含热处理等加热处理的制程，有半导体衬底上的多个焊盘的间隔受到热的影响而不均一地变动的担忧。尤其是，根据半导体衬底的厚度或材料等不同，半导体衬底相对于温度的伸缩量发生变动。另外，半导体衬底的体积膨胀率会根据制造批次不同而变动，所以即便在赋予相同温度的情况下，也有半导体衬底的伸缩量发生变动的担忧。
如果半导体衬底的伸缩量发生变动，那么焊盘间隔根据部位而变动，有转印针的中心位置偏离焊盘的中心位置而接触的担忧。在此情况下，无法将助焊剂转印到焊盘的整个区域，而在焊盘的一部分残留有OSP膜。如果OSP膜残留，那么有焊盘中的焊料的接触面积变窄，产生焊料连接不良的担忧。
发明内容
本发明的一形态提供一种能够防止使用转印板时的焊料连接不良的半导体制造装置及半导体制造方法。
根据本实施方式，提供一种半导体制造装置，具备：
转印板，具有将助焊剂转印到半导体衬底上的多个焊盘的多个转印针；
支撑体，支撑所述转印板并与所述转印板一体地自由移动；
定位机构，以对应的所述转印针接触于所述多个焊盘的每一个的方式定位所述支撑体；以及
间隔调整部，调整所述多个转印针中的至少一部分转印针的间隔。
附图说明
图1是示意性地表示一实施方式的半导体制造装置的特征性构成的图。
图2A是表示将助焊剂转印到焊盘的制程顺序的图。
图2B是表示继图2A后的制程的图。
图2C是表示继图2B后的制程的图。
图2D是表示继图2C后的制程的图。
图2E是表示继图2D后的制程的图。
图2F是表示继图2E后的制程的图。
图3A是表示配置在转印板2的周缘部附近的加热器11的一例的俯视图。
图3B是图3A的A-A线剖视图。
图4是在支撑体的周缘部附近配置有加热器的图。
图5A是表示焊盘与转印针未发生位置偏移的例子的图。
图5B是表示焊盘与转印针发生位置偏移的例子的图。
图5C是表示在发生图5B的位置偏移时利用转印针进行助焊剂转印的例子的图。
图5D是表示在焊盘的一部分残留OSP膜的情况的图。
图5E是表示焊球的一部分因存在OSP膜而未与焊盘接触的状态的图。
图6是说明估测焊盘的位置偏移的方法的图。
图7是针对线膨胀率不同的多个材料表示温度与伸长量的对应关系的图表。
图8是表示关于多个材料的线膨胀率、50℃下的伸长量及75℃下的伸长量的对应关系的图。
图9是表示本实施方式的半导体制造装置1的球搭载制程的流程图。
图10是表示间隔调整部具有应力调整部件的例子的图。
具体实施方式
以下，参照附图对本发明的一实施方式进行说明。此外，在本案说明书随附的附图中，为了容易理解图示，根据实物适当地变更比例尺及纵横尺寸比等而夸张表示。
进而，关于本说明书中使用的形状或几何学条件以及特定出它们程度的例如“平行”、“正交”、“相同”等用语或长度、角度的值等，并不约束为严格的含义，而解释为包含可期待相同功能的程度的范围。
图1是示意性地表示一实施方式的半导体制造装置1的特征性构成的图。图1的半导体制造装置1具备在球搭载制程中将助焊剂转印到半导体衬底上的多个焊盘的功能，图1中示出了用来实现该功能的构成。图1中，省略了半导体装置的层构造的制作或图案化等相关的构成。图1的半导体制造装置1能够应用于制造具有多个焊盘的各种半导体装置，半导体装置的具体种类或用途不限。
图1的半导体制造装置1具备转印板2、支撑体3、定位机构4及间隔调整部5。
转印板2具有将助焊剂转印到半导体衬底上的多个焊盘的多个转印针6。转印板2在如图2A所示那样被定位到助焊剂浴7的上方之后，如图2B所示那样使转印针6接触于助焊剂浴7。由此，如图2C所示，在转印针6的前端部附着有助焊剂8。接着，转印板2在如图2D所示那样被定位到半导体衬底9的上方之后，如图2E所示那样使对应的转印针6接触于半导体衬底9上的焊盘10。由此，如图2F所示，将助焊剂8转印到焊盘10。
支撑体3支撑转印板2并与转印板2一体地自由移动。例如，支撑体3一体地接合于转印板2，使支撑体3在水平方向上移动而能够进行转印针6与焊盘10的位置对准，另外，能够通过使支撑体3在例如铅垂方向上移动，而使转印针6接触于焊盘10。
定位机构4是通过使支撑体3在水平方向及铅垂方向上移动，而进行多个焊盘10与多个转印针6的定位。另外，定位机构4也可使载置半导体衬底9的未图示的载台在水平方向上移动。定位机构4的详细构成不限，例如，也可以半导体衬底9上的对准位置为基准，进行焊盘10与转印针6的定位。
间隔调整部5调整多个转印针6中的至少一部分转印针6的间隔。间隔调整部5例如通过对转印板2或支撑体3赋予热及拉伸应力的至少一种而调整至少一部分转印针6的间隔。
更具体来说，间隔调整部5可以具有对转印板2及支撑体3的至少一个进行加热的加热器。在此情况下，加热器可以转印板2上的多个转印针6中的转印板2的周缘部侧的转印针6的间隔比中央部侧的转印针6的间隔宽的方式，配置在转印板2及支撑体3的周缘部附近。包含加热器等的间隔调整部5在定位机构4的控制下与转印板2及支撑体3一体地移动。
图3A及图3B是表示配置在转印板2的周缘部附近的加热器11的一例的图。图3A是转印板2周边的俯视图，图3B是图3A的A-A线剖视图。图3A表示与矩形状的转印板2的4个端面对向配置加热器11的例子。图3A虽示出了与转印板2的4个端面对向设置4个加热器11的例子，但也可以设置包围转印板2的4个端面的环形状态的1个加热器11。另外，也可以只在转印板2的长边方向的两端部侧设置两个加热器11。
如图3A及图3B所示，通过沿着转印板2的周缘部配置加热器11，转印板2的周缘部侧因热而膨胀，从而可使转印板2上的多个转印针6中的周缘部侧的转印针6的间隔比中央部的转印针6的间隔宽。
此外，加热器11也可以如图4所示那样配置在支撑体3的周缘部附近，以代替配置在转印板2的周缘部附近。图4情况下，转印板2一体地接合于支撑体3，所以如果支撑体3的周缘部因热而膨胀，那么转印板2也同样地膨胀，从而可使转印板2上的多个转印针6中的周缘部侧的转印针6的间隔比中央部的转印针6的间隔宽。
这样一来，间隔调整部5通过例如利用加热器11进行加热，而调整转印板2上的至少一部分转印针6的间隔。根据转印板2的材料不同，线膨胀率[ppm]存在差异。物体的长度L的伸缩量ΔL使用线膨胀率α与温度上升ΔT表示时为以下的(1)式。
ΔL＝αLΔT(1)
附着助焊剂8或焊料时的回焊制程中的温度(回焊温度)为260℃左右，认为无须对半导体装置施加高于回焊温度的温度。作为半导体衬底9的材料的阻焊剂或核心材的玻璃转移温度为约150℃，认为可能对半导体衬底9赋予的最大温度为150℃以下。因此，在本实施方式中，假设可能半导体衬底9以最大为150℃左右被加热，估测半导体衬底9的膨胀程度，依照该膨胀程度来调整转印板2上的转印针6的间隔。
图5A表示焊盘10与转印针6未发生位置偏移的例子，图5B表示焊盘10与转印针6发生了位置偏移的例子。图5B会在例如半导体衬底9因制造制程的加热处理等而膨胀时发生。在半导体衬底9上，抗蚀膜12被图案化而形成，在通过图案化去除了抗蚀膜12的部位，露出有OSP膜13。图5C表示在发生了图5B的位置偏移时利用转印针6进行助焊剂8转印的例子。在此情况下，无法对焊盘10的整个区域转印助焊剂8，而只对焊盘10的一部分转印了助焊剂8。如果在这种状态下进行回焊及清洗，那么会如图5D所示那样在焊盘10的一部分残留有OSP膜13。如果在残留有OSP膜13的状态下安装焊球14，那么如图5E所示，在残留有OSP膜13的部位，焊球14未接触于焊盘10的Cu，而产生焊料的连接不良。
半导体衬底9上的焊盘10的位置偏移量理想为以半导体衬底9上的对准位置为基准。图6表示以半导体衬底9上的基准位置(例如中心位置)为对准位置，根据到对角方向的角部的焊盘10为止的距离的偏移估测焊盘10的位置偏移量的方法的图。图6的例子中，将从对准位置到对角上的角部的焊盘10为止的距离的设计值设为60mm。例如，在某批次的多个半导体衬底9中的从对准位置到对角上的角部的焊盘10为止的距离的实测值为60.05～60.08mm的情况下，位置偏移量成为50～80μm。
图7是针对线膨胀率不同的多个材料表示温度与伸长量的对应关系的图表。图7的图表是针对线膨胀率α＝18、30、50、70ppm的各材料表示出温度为0℃～120℃的范围内的伸长量。根据图7，为了修正伸长量50～80μm，理想为线膨胀率α＝30ppm左右的材料。
图7为一例，焊盘10的位置偏移量根据半导体衬底9的材料或温度不同而变动，所以，理想的是利用图6的方法实际测量焊盘10的位置偏移量，根据其实测值调整加热器11的温度及加热时间。另外，在仅由加热器11的温度或加热时间无法使转印针6的伸长量与焊盘10的位置偏移量一致的情况下，理想的是变更要利用加热器11加热的转印板2或支撑衬底的材料。
图8是表示关于多个材料的线膨胀率、50℃下的伸长量及75℃下的伸长量的对应关系的图。如图8所示，线膨胀率根据材料不同而存在较大差异，根据该线膨胀率不同，50℃与75℃下的伸长量亦存在差异。图8的材料中，最接近图7结果的材料是杜拉铝。此外，图7是假设50～100℃下的伸长量为50～80μm的情况，杜拉铝不一定始终最佳。
图9是表示本实施方式的半导体制造装置1的球搭载制程的流程图。图9的球搭载制程大致划分包含OSP膜13的去除制程、焊球安装制程、焊料不良检查制程这三个制程。焊料不良检查制程并非对所有半导体装置进行，所以不是必需制程。
在开始图9的流程图的处理之前，已完成了半导体装置的制造。首先，判定半导体装置上的多个焊盘10中的至少一部分焊盘10的间隔是否偏离设计值(步骤S1)。该判定处理只要利用相机拍摄半导体装置的安装面侧，对其拍摄图像进行解析而判断焊盘10间隔的实测值与设计值是否超过特定阈值即可。在一批次中存在多个半导体装置的情况下，也可以针对其中的一个半导体装置进行步骤S1的判定处理，将其判定结果应用于相同批次内的其余半导体装置。
如果在步骤S1中判定为偏移，那么利用间隔调整部5调整转印板2的至少一部分转印针6的间隔，例如对转印板2或支撑体3进行加热等(步骤S2)。关于间隔调整部5，利用间隔调整部5调整转印针6的间隔，直到半导体装置上的多个焊盘10与转印板2的多个转印针6的位置偏移减小至实用上不成问题的程度为止。
在步骤S2的处理已结束的情况下，或者步骤S1中判定为未偏移的情况下，使转印板2上的多个转印针6接触于半导体装置上的多个焊盘10，将助焊剂8转印到焊盘10(步骤S3)。
接着，以特定温度进行回焊处理(步骤S4)。通过进行回焊处理，OSP膜13与助焊剂反应而被去除。接着，进行清洗处理(步骤S5)。由此，助焊剂8自焊盘10被去除。以上的步骤S3～S5为OSP膜13的去除制程。
接着，使转印板2的多个转印针6再次接触于半导体装置的多个焊盘10，将助焊剂8转印到焊盘10(步骤S6)。如果在步骤S1中使用间隔调整部5进行过转印针6的间隔调整，那么在步骤S6中无须利用间隔调整部5进行间隔调整。
接着，使焊球附着于助焊剂8上(步骤S7)。接着，以特定温度进行回焊处理，使焊球接触于焊盘10(步骤S8)。接着，进行清洗而去除助焊剂8(步骤S9)。以上的步骤S6～S9为焊球安装制程。
接下来，判定是否进行半导体装置的检查(步骤S10)，在要进行检查的情况下，将接合于半导体装置的多个焊盘10的焊球加热而去除(步骤S11)。接着，拍摄半导体装置的安装面侧，通过拍摄图像的图像解析而确认有无OSP膜13残留(步骤S12)。
在所述例子中，对间隔调整部5利用加热器11加热转印板2或支撑体3而调整至少一部分转印针6的间隔的例子进行了说明，但间隔调整部5也可以调整施加到转印板2或支撑体3的应力而调整转印针6的间隔。
图10是表示间隔调整部5具有应力调整部件15的例子的图。图10的应力调整部件15具有安装于转印板2的四角的4个应力赋予部16。这些应力赋予部16对转印板2在对角方向上赋予拉伸应力。如果对四角施加相同的应力，那么转印板2均等地膨胀，所以，对于应力赋予部16理想的是，通过未图示的马达的相同的驱动力来驱动应力赋予部16。应力赋予部16与使用加热器11时同样地，实际测量从半导体装置的对准位置到四角的焊盘10的角部为止的距离，检测与设计值的位置偏移，以使转印针6的间隔伸长相当于该位置偏移量的方式，利用应力赋予部16对转印板2赋予拉伸应力。根据转印板2的材料或厚度不同，使转印板2伸长单位长度所需的应力存在差异，所以，理想的是事先对所要使用的转印板2求出拉伸应力与伸长量的对应关系。
此外，图10中，在转印板2的四角安装有应力赋予部16，但应力赋予部16的安装部位并不限定于转印板2的四角。例如，也可以在矩形状的转印板2的各边的中央安装应力赋予部16。
这样，在本实施方式中，在半导体衬底9因半导体制造制程的加热处理膨胀而至少一部分焊盘10的间隔比设计值宽的情况下，通过对转印板2或支撑体3进行加热或赋予应力等，使转印针6的间隔变宽。由此，能够抑制焊盘10与转印针6的位置偏移，能够将助焊剂8转印到焊盘10的整个区域，所以，能够防止在焊盘10内残留OSP膜13的不良状况。
已对本发明的若干实施方式进行了说明，但这些实施方式是作为示例而提出，并不意图限定发明的范围。这些新颖的实施方式能以其它各种方式加以实施，且能在不脱离发明的主旨的范围内进行各种省略、替换、变更。这些实施方式或其变化包含在发明的范围或主旨中，并且包含在权利要求书所记载的发明及其均等的范围内。
[符号的说明]
1 半导体制造装置
2 转印板
3 支撑体
4 定位机构
5 间隔调整部
6 转印针
7 助焊剂浴
8 助焊剂
9 半导体衬底
10 焊盘
11 加热器
12 抗蚀膜
13 OSP膜
14 焊球
15 应力调整部件
16 应力赋予部

Claims (6)

1.一种半导体制造装置，具备：
转印板，具有将助焊剂转印到半导体衬底上的多个焊盘的多个转印针；
支撑体，支撑所述转印板并与所述转印板一体地自由移动；
定位机构，以对应的所述转印针接触于所述多个焊盘的每一个的方式定位所述支撑体；以及
间隔调整部，调整所述多个转印针中的至少一部分转印针的间隔。
2.根据权利要求1所述的半导体制造装置，其中所述间隔调整部具有对所述转印板及所述支撑体的至少一个进行加热的加热器。
3.根据权利要求2所述的半导体制造装置，其中所述加热器是以所述多个转印针中的所述转印板的周缘部侧的转印针的间隔比中央部侧的转印针的间隔宽的方式，配置在所述转印板及所述支撑体的端部侧。
4.根据权利要求2或3所述的半导体制造装置，其中所述加热器以包围所述转印板的周缘部的方式配置，
所述支撑体支撑所述转印板及所述加热器使它们一体地自由移动。
5.根据权利要求1所述的半导体制造装置，其中所述间隔调整部具有对所述转印板及所述支撑体的至少一个赋予拉伸应力的应力赋予部。
6.一种半导体制造方法，具备如下步骤：
调整具有多个转印针的转印板上的所述多个转印针中的至少一部分转印针的间隔，所述多个转印针将助焊剂转印到半导体衬底上的多个焊盘；以及
使调整过所述间隔后的所述多个转印针的每一个接触于对应的焊盘，将附着于所述多个转印针的前端部的助焊剂转印到所述多个焊盘。
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