TWI696723B - 原料氣體供給裝置、原料氣體供給方法及記憶媒體 - Google Patents

原料氣體供給裝置、原料氣體供給方法及記憶媒體 Download PDF

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Publication number
TWI696723B
TWI696723B TW105138271A TW105138271A TWI696723B TW I696723 B TWI696723 B TW I696723B TW 105138271 A TW105138271 A TW 105138271A TW 105138271 A TW105138271 A TW 105138271A TW I696723 B TWI696723 B TW I696723B
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TW
Taiwan
Prior art keywords
raw material
gas
gas supply
value
carrier gas
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TW105138271A
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English (en)
Chinese (zh)
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TW201738406A (zh
Inventor
八木宏憲
諸井政幸
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日商東京威力科創股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW105138271A 2015-12-02 2016-11-22 原料氣體供給裝置、原料氣體供給方法及記憶媒體 TWI696723B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015235846A JP6565645B2 (ja) 2015-12-02 2015-12-02 原料ガス供給装置、原料ガス供給方法及び記憶媒体
JP2015-235846 2015-12-02

Publications (2)

Publication Number Publication Date
TW201738406A TW201738406A (zh) 2017-11-01
TWI696723B true TWI696723B (zh) 2020-06-21

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Family Applications (1)

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TW105138271A TWI696723B (zh) 2015-12-02 2016-11-22 原料氣體供給裝置、原料氣體供給方法及記憶媒體

Country Status (5)

Country Link
US (1) US10385457B2 (https=)
JP (1) JP6565645B2 (https=)
KR (2) KR101988090B1 (https=)
CN (1) CN106987824B (https=)
TW (1) TWI696723B (https=)

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DE102014115497A1 (de) * 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
WO2018025713A1 (ja) * 2016-08-05 2018-02-08 株式会社堀場エステック ガス制御システム及び該ガス制御システムを備えた成膜装置
JP6904231B2 (ja) * 2017-12-13 2021-07-14 東京エレクトロン株式会社 基板処理方法、記憶媒体及び原料ガス供給装置
US11685998B2 (en) * 2018-06-21 2023-06-27 Asm Ip Holding B.V. Substrate processing apparatus, storage medium and substrate processing method
JP7094172B2 (ja) 2018-07-20 2022-07-01 東京エレクトロン株式会社 成膜装置、原料供給装置及び成膜方法
TWI821363B (zh) * 2018-08-31 2023-11-11 美商應用材料股份有限公司 前驅物遞送系統
JP7281285B2 (ja) 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム
JP7356237B2 (ja) * 2019-03-12 2023-10-04 株式会社堀場エステック 濃度制御装置、原料消費量推定方法、及び、濃度制御装置用プログラム
CN112144038B (zh) * 2019-06-27 2023-06-27 张家港恩达通讯科技有限公司 一种用于MOCVD设备GaAs基外延掺杂源供给系统
JP2021042445A (ja) * 2019-09-12 2021-03-18 東京エレクトロン株式会社 ガス供給装置、基板処理装置及びガス供給装置の制御方法
TWI846960B (zh) * 2019-10-04 2024-07-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 低揮發性前驅物的供應系統
JP7413120B2 (ja) * 2020-03-27 2024-01-15 東京エレクトロン株式会社 ガス供給量算出方法、及び、半導体装置の製造方法
JP7635529B2 (ja) * 2020-09-30 2025-02-26 東京エレクトロン株式会社 固体原料の残存量を推定する方法、成膜を行う方法、原料ガスを供給する装置、及び成膜を行う装置
US11735447B2 (en) * 2020-10-20 2023-08-22 Applied Materials, Inc. Enhanced process and hardware architecture to detect and correct realtime product substrates
US12191214B2 (en) * 2021-03-05 2025-01-07 Taiwan Semiconductor Manufacturing Company Limited System and methods for controlling an amount of primer in a primer application gas
KR20230017145A (ko) * 2021-07-27 2023-02-03 에이에스엠 아이피 홀딩 비.브이. 공정 챔버로의 전구체 전달을 모니터링하는 시스템 및 방법
JP7799242B2 (ja) * 2022-03-28 2026-01-15 株式会社島津製作所 ガス分析装置及び校正ガス供給方法

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US20040007180A1 (en) * 2002-07-10 2004-01-15 Tokyo Electron Limited Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
JP2006222133A (ja) * 2005-02-08 2006-08-24 Hitachi Cable Ltd 原料ガス供給方法及びその装置
TW200846489A (en) * 2006-12-19 2008-12-01 Tokyo Electron Ltd Method and system for controlling a vapor delivery system
TW201303970A (zh) * 2011-04-28 2013-01-16 富士金股份有限公司 原料的氣化供給裝置
CN103688339A (zh) * 2011-07-22 2014-03-26 应用材料公司 用于ald/cvd工艺的反应物输送系统

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JP5103983B2 (ja) * 2007-03-28 2012-12-19 東京エレクトロン株式会社 ガス供給方法、ガス供給装置、半導体製造装置及び記憶媒体
JP5895712B2 (ja) * 2012-05-31 2016-03-30 東京エレクトロン株式会社 原料ガス供給装置、成膜装置、原料ガスの供給方法及び記憶媒体
JP2014145115A (ja) * 2013-01-29 2014-08-14 Tokyo Electron Ltd 原料ガス供給装置、成膜装置、流量の測定方法及び記憶媒体
JP6142629B2 (ja) * 2013-03-29 2017-06-07 東京エレクトロン株式会社 原料ガス供給装置、成膜装置及び原料ガス供給方法
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体

Patent Citations (6)

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US20040007180A1 (en) * 2002-07-10 2004-01-15 Tokyo Electron Limited Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
JP2006222133A (ja) * 2005-02-08 2006-08-24 Hitachi Cable Ltd 原料ガス供給方法及びその装置
TW200846489A (en) * 2006-12-19 2008-12-01 Tokyo Electron Ltd Method and system for controlling a vapor delivery system
TW201303970A (zh) * 2011-04-28 2013-01-16 富士金股份有限公司 原料的氣化供給裝置
CN103688339A (zh) * 2011-07-22 2014-03-26 应用材料公司 用于ald/cvd工艺的反应物输送系统

Also Published As

Publication number Publication date
CN106987824A (zh) 2017-07-28
JP6565645B2 (ja) 2019-08-28
KR20170065007A (ko) 2017-06-12
CN106987824B (zh) 2019-09-03
US10385457B2 (en) 2019-08-20
TW201738406A (zh) 2017-11-01
JP2017101295A (ja) 2017-06-08
US20170159175A1 (en) 2017-06-08
KR101988090B1 (ko) 2019-06-11
KR20190022596A (ko) 2019-03-06

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