TWI694102B - 多孔性聚胺甲酸酯拋光墊及其製備方法 - Google Patents
多孔性聚胺甲酸酯拋光墊及其製備方法 Download PDFInfo
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- TWI694102B TWI694102B TW107129322A TW107129322A TWI694102B TW I694102 B TWI694102 B TW I694102B TW 107129322 A TW107129322 A TW 107129322A TW 107129322 A TW107129322 A TW 107129322A TW I694102 B TWI694102 B TW I694102B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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Abstract
具體實例係關於一種使用在半導體的化學機械平坦化(CMP)方法之多孔性聚胺甲酸酯抛光墊及其製造方法。在該多孔性聚胺甲酸酯抛光墊中,可藉由使用已熱膨脹的微膠囊作為固相發泡劑及惰性氣體作為氣相發泡劑來控制孔洞的尺寸及分佈,藉此調整該抛光墊之抛光性能(即,抛光速率)。
Description
發明領域 具體實例係關於一種使用在半導體的化學機械平坦化(CMP)方法之多孔性聚胺甲酸酯抛光墊及其製造方法。
發明背景 在用以製備半導體的方法中,化學機械平坦化(CMP)方法指為一包括下列之步驟:將晶圓固定至一頭且與安裝在平台上的抛光墊表面接觸,然後,將一漿體供應到其之上來化學處理該晶圓,同時相對地移動該平台與頭以因此機械平坦化在該晶圓表面上之不規則性。
在此CMP方法中,抛光墊係一扮演重要角色的基本成員。通常來說,抛光墊係由聚胺甲酸酯基底的樹脂製得且在其表面上具有用於大漿體流的溝紋及用以支撐其細流的孔洞。
在抛光墊中的孔洞可使用具有空洞的固相發泡劑;填充揮發性液體、惰性氣體、纖維或其類似物之液相發泡劑;或藉由化學反應產生氣體來形成。
使用惰性氣體或揮發性液相發泡劑來形成孔洞之技術具有不排放出會影響CMP方法的任何材料之優點。但是,因為其不可避免地會處理到不方便控制的氣相,將難以精確地控制孔洞尺寸及墊的密度。特別難以製造出50微米或較小的均勻孔洞。此外,在沒有改變抛光墊的聚胺甲酸酯基質組合物下,會有非常難以控制孔洞尺寸及墊密度的問題。
至於固相發泡劑,使用尺寸已經藉由熱膨脹調整的微膠囊(即,已熱膨脹的微膠囊)。因為呈已經膨脹的微氣球結構之已熱膨脹的微膠囊具有均勻的顆粒尺寸,其可均勻地控制孔洞尺寸。但是,因為該微膠囊會在100℃或較高之高溫反應條件下改變形狀,該已熱膨脹的微膠囊具有難以控制所形成的孔洞之缺點。
此外,雖然當使用單一發泡劑且如習知方法般實行微孔洞時,可形成與如所設計的尺寸及分佈相符之孔洞,但其在設計孔洞時的自由度低及在孔洞分佈之控制上有限。
韓國早期公開專利公告案號2016-0027075揭示出一種使用惰性氣體及孔洞引發聚合物來製造低密度抛光墊的方法,及一種低密度抛光墊。但是,此公告沒有教導尺寸之調整及孔洞之分佈及抛光墊之抛光速率。
發明概要 欲解決的工藝問題 此外,具體實例的目標為提供一種使用惰性氣體及已熱膨脹的微膠囊作為發泡劑製得且具有其孔洞尺寸及分佈係經控制的多孔性聚胺甲酸酯抛光墊,及其製造方法。 問題之解答
為了達成上述目標,具體實例提供一種多孔性聚胺甲酸酯抛光墊,其包含一聚胺甲酸酯樹脂及分佈在該聚胺甲酸酯樹脂中的孔洞,其中該等孔洞的孔洞尺寸分佈係以該抛光墊之截面積為基準,其中在最大波峰處的孔洞尺寸係小於平均孔洞尺寸,其中在最大波峰處的孔洞尺寸係18至28微米,平均孔洞尺寸係24至36微米,及具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多的孔洞之截面積總和係大於具有孔洞尺寸大於在最大波峰處的孔洞尺寸有10微米至少於15微米的孔洞之截面積總和。
另一個具體實例提供一種用以製造多孔性聚胺甲酸酯抛光墊的方法,其包括當混合該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑時,注入惰性氣體,以模塑該混合物同時形成孔洞,其中該固相發泡劑的使用量係1至3重量份,以100重量份胺甲酸酯基底的預聚物為基準。 本發明的優良效應
在根據具體實例的多孔性聚胺甲酸酯抛光墊中,可藉由使用已熱膨脹的微膠囊作為固相發泡劑及惰性氣體作為氣相發泡劑來控制孔洞的尺寸及分佈,藉此調整該抛光墊之抛光性能(即,抛光速率)。
較佳實施例之詳細說明 進行本發明的最好模式 多孔性聚胺甲酸酯抛光墊 根據具體實例之多孔性聚胺甲酸酯抛光墊包含一聚胺甲酸酯樹脂及分佈在該聚胺甲酸酯樹脂中的孔洞,其中該等孔洞之孔洞尺寸分佈係以該抛光墊的截面積為基準,其中在最大波峰處之孔洞尺寸係小於平均孔洞尺寸,在最大波峰處之孔洞尺寸係18至28微米,平均孔洞尺寸係24至36微米,及具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多之孔洞的截面積總和係大於具有孔洞尺寸大於在最大波峰處的孔洞尺寸有10微米至少於15微米之孔洞的截面積總和。
該多孔性聚胺甲酸酯抛光墊係由聚胺甲酸酯樹脂製得,及該聚胺甲酸酯樹脂可衍生自具有異氰酸酯終端基團之胺甲酸酯基底的預聚物。在此事件中,該聚胺甲酸酯樹脂包含構成該預聚物之單體單元。
預聚物通常指為具有相當低分子量的聚合物,其聚合程度係調整至中間程度以便方便地在製造物件之方法中模塑成最後製造的模塑物件。該預聚物可自模塑或在與另一種可聚合的化合物反應後模塑。例如,可藉由讓異氰酸酯化合物與多元醇反應來製備一預聚物。
例如,在製備胺甲酸酯基底的預聚物時,可使用之異氰酸酯化合物可係至少一種選自於由下列所組成之群的異氰酸酯:二異氰酸甲苯酯(TDI)、萘-1,5-二異氰酸酯、二異氰酸對-伸苯酯、二異氰酸聯甲苯胺酯、二異氰酸4,4’-二苯基甲烷酯、二異氰酸己二酯、二異氰酸二環己基甲烷酯及二異氰酸異佛爾酮酯。
例如,可使用來製備胺甲酸酯基底的預聚物之多元醇可係至少一種選自於由下列所組成之群的多元醇:聚醚多元醇、聚酯多元醇、聚碳酸酯多元醇及丙烯醯基多元醇。該多元醇可具有重量平均分子量(Mw) 300至3,000克/莫耳。
該聚胺甲酸酯樹脂可具有重量平均分子量500至3,000克/莫耳。特別是,該聚胺甲酸酯樹脂可具有重量平均分子量(Mw) 600至2,000克/莫耳或700至1,500克/莫耳。 孔洞
該等孔洞係呈現為分散在該聚胺甲酸酯樹脂中。特別是,該等孔洞可衍生自使用作為固相發泡劑之已熱膨脹的微膠囊,或從惰性氣體形成。
參照圖1,以該等孔洞的截面積總和100%為基準,在該等孔洞之孔洞尺寸分佈中,於最大波峰處的孔洞尺寸係小於平均孔洞尺寸,及具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多之孔洞的截面積總和係大於具有孔洞尺寸大於在最大波峰處的孔洞尺寸有10微米至少於15微米孔洞之截面積總和。特別是,在具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多之孔洞的截面積總和與具有孔洞尺寸大於在最大波峰處的孔洞尺寸有10微米至少於15微米之孔洞的截面積總和間之差異係1至10%或5至9%。
在最大波峰處的孔洞尺寸係18至28微米及平均孔洞尺寸係24至36微米。特別是,在最大波峰處的孔洞尺寸可小於平均孔洞尺寸1至10微米。更特別是,在最大波峰處的孔洞尺寸可小於平均孔洞尺寸5至10微米或5至8微米。
該多孔性聚胺甲酸酯抛光墊可包括30至70體積%或30至60體積%的孔洞量,以該抛光墊的總體積為基準。
該等孔洞可包含由固相發泡劑形成的第一孔洞及由氣相發泡劑形成的第二孔洞。特別是,該第二孔洞可包含具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多之孔洞及具有孔洞尺寸小於在最大波峰處的孔洞尺寸之孔洞。 額外的添加劑
該多孔性聚胺甲酸酯抛光墊可進一步包含至少一種選自於由三級胺基底的化合物及有機金屬化合物所組成之群的反應速率控制劑;及聚矽氧基底的界面活性劑。
該反應速率控制劑可係一反應促進劑或一反應延遲劑。更特別是,該反應速率控制劑可係一反應促進劑。例如,該反應速率控制劑可包含選自於由下列所組成之群的至少一種:三伸乙基二胺(TEDA)、二甲基乙醇胺(DMEA)、四甲基丁烷二胺(TMBDA)、2-甲基-三伸乙基二胺、二甲基環己基胺(DMCHA)、三乙基胺(TEA)、三異丙醇胺(TIPA)、1,4-二吖雙環(2,2,2)辛烷、雙(2-甲基胺基乙基)醚、三甲基胺基乙基乙醇胺、N,N,N,N,N”-五甲基二伸乙基三胺、二甲基胺基乙基胺、二甲基胺基丙基胺、苄基二甲基胺、N-乙基嗎福啉、N,N-二甲基胺基乙基嗎福啉、N,N-二甲基環己基胺、2-甲基-2-吖降烷、二月桂酸二丁錫、辛酸亞錫、二醋酸二丁基錫、二醋酸二辛基錫、順丁烯二酸二丁基錫、二-2-乙基己酸二丁基錫及二硫醇二丁基錫。特別是,該反應速率控制劑可係選自於由苄基二甲基胺、N,N-二甲基環己基胺及三乙基胺所組成之群的至少一種。 聚矽氧基底的界面活性劑
該聚矽氧基底的界面活性劑可作用以防止欲形成的孔洞彼此重疊及聚結。該界面活性劑的種類不特別限制,只要其通常使用來製造抛光墊。 抛光墊之物理性質
該多孔性聚胺甲酸酯抛光墊可具有厚度1至5毫米。特別是,該多孔性聚胺甲酸酯抛光墊可具有厚度1至3毫米,1至2.5毫米,1.5至5毫米,1.5至3毫米,1.5至2.5毫米,1.8至5毫米,1.8至3毫米或1.8至2.5毫米。若該抛光墊的厚度係在上述範圍內時,其可充分顯示出作為抛光墊的基本物理性質。
該多孔性聚胺甲酸酯抛光墊可在其表面上具有用於機械抛光的溝紋。該溝紋可具有如機械抛光想要的深度、寬度及間隔,其未特別限制。
該多孔性聚胺甲酸酯抛光墊之密度及物理性質可透過該胺甲酸酯基底的預聚物之分子結構,藉由在該異氰酸酯與多元醇間之反應聚合來控制。特別是,該多孔性聚胺甲酸酯抛光墊可具有硬度30至80 Shore D。更特別是,該多孔性聚胺甲酸酯抛光墊可具有硬度40至70 Shore D。
特別是,該多孔性聚胺甲酸酯抛光墊可具有比重0.6至0.9克/立方公分。更特別是,該多孔性聚胺甲酸酯抛光墊可具有比重0.7至0.85克/立方公分。
特別是,該多孔性聚胺甲酸酯抛光墊可具有抗張強度10至100公斤力/平方公分。更特別是,該多孔性聚胺甲酸酯抛光墊可具有抗張強度15至70公斤力/平方公分。
特別是,該多孔性聚胺甲酸酯抛光墊可具有伸長度30%至300%。更特別是,該多孔性聚胺甲酸酯抛光墊可具有伸長度50%至200%。
當鎢的抛光速率係1時,該多孔性聚胺甲酸酯抛光墊可具有氧化矽(SiOx
)抛光速率係0.8至0.99。特別是,當鎢的抛光速率係1時,該多孔性聚胺甲酸酯抛光墊可具有氧化矽(SiOx
)抛光速率係0.82至0.98。更特別是,該多孔性聚胺甲酸酯抛光墊可具有氧化矽抛光速率850埃/分鐘至1,500埃/分鐘,860埃/分鐘至1,300埃/分鐘,或900埃/分鐘至1,300埃/分鐘。 用以製造多孔性聚胺甲酸酯抛光墊的方法
根據具體實例,有提供一種用以製造多孔性聚胺甲酸酯抛光墊的方法,其包含當混合該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑時,注入惰性氣體,以模塑該混合物同時形成孔洞,其中該固相發泡劑的使用量係1至3重量份,以100重量份胺甲酸酯基底的預聚物為基準。 原料之供應
該胺甲酸酯基底的預聚物可藉由讓異氰酸酯化合物與如上所述的多元醇反應而製備。特定型式的異氰酸酯化合物及多元醇係如在上述抛光墊中所例示。
該胺甲酸酯基底的預聚物可具有重量平均分子量500至3,000克/莫耳。特別是,該胺甲酸酯基底的預聚物可具有重量平均分子量(Mw) 600至2,000克/莫耳或800至1,000克/莫耳。
至於實施例,該胺甲酸酯基底的預聚物可係具有重量平均分子量(Mw) 500至3,000克/莫耳之聚合物,其係來自二異氰酸甲苯酯作為異氰酸酯化合物與聚四亞甲基醚二醇作為多元醇之聚合。 固化劑
該固化劑可係選自於由胺化合物及醇化合物所組成之群的至少一種。特別是,該固化劑可包含選自於由芳香族胺、脂肪族胺、芳香族醇及脂肪族醇所組成之群的至少一種。
例如,該固化劑可係選自於由下列所組成之群的至少一種:4,4’-亞甲基雙(2-氯苯胺)(MOCA)、二乙基甲苯二胺、二胺基二苯基甲烷、二胺基二苯基碸、間-伸茬基二胺、異佛爾酮二胺、乙二胺、二伸乙基三胺、三伸乙基四胺、聚丙二胺、聚伸丙基三胺、乙二醇、二甘醇、二丙二醇、丁二醇、己二醇、甘油、三羥甲基丙烷及雙(4-胺基-3-氯苯基)甲烷。 固相發泡劑
該固相發泡劑係已熱膨脹(即,尺寸經控制)的微膠囊及可呈具有平均孔洞尺寸5至200微米的微氣球結構。該已熱膨脹(即,尺寸經控制)的微膠囊可藉由熱膨脹一熱可膨脹微膠囊獲得。
該熱可膨脹微膠囊可包括一包含熱塑性樹脂的外殼;及一囊封在該外殼中的發泡劑。該熱塑性樹脂可係選自於由下列所組成之群的至少一種:偏二氯乙烯基底的共聚物、丙烯腈基底的共聚物、甲基丙烯腈基底的共聚物及丙烯酸共聚物。再者,該囊封在內部的發泡劑可係選自於由具有1至7個碳原子的烴所組成之群的至少一種。特別是,該囊封在內部的發泡劑可選自於由下列所組成之群:低分子量烴,諸如乙烷、乙烯、丙烷、丙烯、正丁烷、異丁烷、丁烯、異丁烯、正戊烷、異戊烷、新戊烷、正己烷、庚烷、石油醚及其類似物;氯氟烴,諸如三氯氟甲烷(CCl3
F)、二氯二氟甲烷(CCl2
F2
)、氯三氟甲烷(CClF3
)、四氟乙烯(CClF2
-CClF2
)及其類似物;及四烷基矽烷,諸如四甲基矽烷、三甲基乙基矽烷、三甲基異丙基矽烷、三甲基正丙基矽烷及其類似物。
該固相發泡劑的使用量可係1至3重量份,以100重量份胺甲酸酯基底的預聚物為基準。特別是,該固相發泡劑的使用量可係1.3至2.7重量份或1.3至2.6重量份,以100重量份胺甲酸酯基底的預聚物為基準。 反應速率控制劑
該反應速率控制劑可係至少一種選自於由三級胺基底的化合物及有機金屬化合物所組成之群的反應促進劑。特別是,該反應促進劑可包含選自於由下列所組成之群的至少一種:三伸乙基二胺(TEDA)、二甲基乙醇胺(DMEA)、四甲基丁烷二胺(TMBDA)、2-甲基-三伸乙基二胺、二甲基環己基胺(DMCHA)、三乙基胺(TEA)、三異丙醇胺(TIPA)、1,4-二吖雙環(2,2,2)辛烷、雙(2-甲基胺基乙基)醚、三甲基胺基乙基乙醇胺、N,N,N,N,N”-五甲基二伸乙基三胺、二甲基胺基乙基胺、二甲基胺基丙基胺、苄基二甲基胺、N-乙基嗎福啉、N,N-二甲基胺基乙基嗎福啉、N,N-二甲基環己基胺、2-甲基-2-吖降烷、二月桂酸二丁錫、辛酸亞錫、二醋酸二丁基錫、二醋酸二辛基錫、順丁烯二酸二丁基錫、二-2-乙基己酸二丁基錫及二硫醇二丁基錫。特別是,該反應速率控制劑可包含選自於由苄基二甲基胺、N,N-二甲基環己基胺及三乙基胺所組成之群的至少一種。
該反應速率控制劑的使用量可係0.2至2重量份,以100重量份胺甲酸酯基底的預聚物為基準。特別是,該反應速率控制劑的使用量可係0.2至1.8重量份、0.2至1.7重量份、0.2至1.6重量份或0.2至1.5重量份,以100重量份胺甲酸酯基底的預聚物為基準。若該反應速率控制劑係以在上述範圍內之量使用時,該混合物(即,該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑)之反應速率(即,固化時間)係經合適地控制,以便可製造出具有想要的孔洞尺寸之抛光墊。 聚矽氧基底的界面活性劑
該聚矽氧基底的界面活性劑可作用以防止欲形成的孔洞彼此重疊及聚結。
該聚矽氧基底的界面活性劑之使用量可係0.2至2重量份,以100重量份胺甲酸酯基底的預聚物為基準。特別是,該界面活性劑的使用量可係0.2至1.9重量份、0.2至1.8重量份、0.2至1.7重量份、0.2至1.6重量份或0.2至1.5重量份,以100重量份胺甲酸酯基底的預聚物為基準。若該聚矽氧基底的界面活性劑之量係在上述範圍內時,可於模具中穩定地形成衍生自該氣相發泡劑的孔洞並維持其。 惰性氣體
當混合該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑且進行反應時,進料該惰性氣體,因此在該抛光墊中形成孔洞。該惰性氣體的種類不特別限制,只要其係不參與在該預聚物與固化劑間之反應的氣體。例如,該惰性氣體可係選自於由氮氣(N2
)、氬氣(Ar)及氦(He)所組成之群的至少一種。特別是,該惰性氣體可係氮氣(N2
)或氬氣(Ar)。
該惰性氣體可以15至30%之體積進料,以該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑之總體積為基準。特別是,該惰性氣體可以20至30%之體積進料,以該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑之總體積為基準。
至於實施例,可實質上將該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑、聚矽氧基底的界面活性劑及惰性氣體同時放進該混合方法中。至於另一個實施例,可預先混合該胺甲酸酯基底的預聚物、固相發泡劑與該聚矽氧基底的界面活性劑,隨後,可引進固化劑、反應速率控制劑與惰性氣體。也就是說,該反應速率控制劑不預先與該胺甲酸酯基底的預聚物或固化劑混合。若該反應速率控制劑係預先與該胺甲酸酯基底的預聚物、固化劑或其類似物混合時,會難以控制反應速率。特別是,其可明顯損害該具有異氰酸酯終端基團的預聚物之穩定性。
該混合係藉由混合該胺甲酸酯基底的預聚物與固化劑並將該固相發泡劑及惰性氣體均勻分散在該原料中來初始化其之反應。在此事件中,該反應速率控制劑可從反應開始時介入在該胺甲酸酯基底的預聚物與固化劑間之反應,以因此控制該反應速率。特別是,該混合可在1,000至10,000 rpm或4,000至7,000 rpm之速度下進行。該惰性氣體及固相發泡劑於上述速度範圍內均勻分散在原料中可更優良。
該胺甲酸酯基底的預聚物及固化劑可以1:0.8至1.2之莫耳當量比率或1:0.9至1.1之莫耳當量比率混合,以在每個分子中的反應性基團之莫耳數為基準。於此,「在每個分子中的反應性基團之莫耳數」指為,例如,在該胺甲酸酯基底的預聚物中之異氰酸酯基團的莫耳數及在該固化劑中之反應性基團(例如,胺基團、醇基團及其類似基團)的莫耳數。因此,該胺甲酸酯基底的預聚物及固化劑可在混合方法期間藉由控制進料速率以固定速率進料,如此該胺甲酸酯基底的預聚物及固化劑係以每單位時間滿足上述例示的莫耳當量比率之量進料。 反應及孔洞之形成
該胺甲酸酯基底的預聚物及固化劑在混合後彼此反應而形成一固體聚胺甲酸酯,然後將其形成薄板或其類似物。特別是,在該胺甲酸酯基底的預聚物中之異氰酸酯終端基團可與在該固化劑中的胺基團、醇基團及其類似基團反應。在此事件中,該惰性氣體及固相發泡劑係均勻分散在原料中來形成孔洞而沒有參與在該胺甲酸酯基底的預聚物與固化劑間之反應。
此外,該反應速率控制劑係藉由促進或延遲在該胺甲酸酯基底的預聚物與固化劑間之反應來調整孔洞尺寸。例如,若該反應速率控制劑係一用以延遲反應的反應延遲劑時,該細微分散在原料中的惰性氣體彼此結合之時間延長而增加孔洞的平均尺寸。另一方面,若該反應速率控制劑係一用以促進反應的反應促進劑時,該細微分散在原料中的惰性氣體彼此結合之時間縮短而減少孔洞的平均尺寸。 模塑
該模塑係使用模具進行。特別是,可將已於混合頭或其類似物中充分攪拌的原料(即,包含該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑、聚矽氧基底的界面活性劑及惰性氣體之混合物)注入模具中以填滿其內部。於模具中完成在該胺甲酸酯基底的預聚物與固化劑間之反應,因此製造出一經模塑且與該模具形狀呈保形之固化結塊形式的主體。
之後,可將如此獲得之模塑主體適當地切片或切割成薄板來製造抛光墊。至於實施例,在具有高度係最後欲製造的抛光墊厚度5至50倍之模具中製造一模塑主體,然後以相同厚度進行切片,以便一次製造出複數片用於抛光墊的薄板。在此事件中,可使用反應延遲劑作為反應速率控制劑以保證足夠的固化時間。因此,可製造出用於抛光墊的薄板,同時該模具之高度係最後製造的抛光墊厚度約5至約50倍。但是,該切片薄板可依在模具內的模塑位置而具有不同尺寸的孔洞。也就是說,在模具較低位置處模塑之薄板具有細微的孔洞尺寸,然而在模具較上位置處模塑之薄板可具有比在較低位置處形成的薄板大之孔洞尺寸。
因此,為了薄板彼此皆具有均勻的孔洞尺寸,較佳為使用一次模塑能製造出一片薄板的模具。為此目的,該模具的高度可與最後欲製造的多孔性聚胺甲酸酯抛光墊之厚度不明顯不同。例如,可使用具有高度係最後欲製造的多孔性聚胺甲酸酯抛光墊厚度1至3倍之模具進行該模塑。更特別是,該模具可具有高度係最後欲製造的抛光墊厚度之1.1至2.5倍,或1.2至2倍。在此事件中,可使用反應促進劑作為該反應速率控制劑來形成具有更均勻尺寸的孔洞。
之後,可從該模具所獲得的模塑主體各別切掉頂端及底端。例如,可切掉之模塑主體頂端及底端各者係該模塑主體的總厚度之1/3或較少,1/22至3/10,或1/12至1/4。
至於特定實施例,使用具有高度係最後欲製造的多孔性聚胺甲酸酯抛光墊厚度之1.2至2倍的模具來進行該模塑,然後,可在模塑後進一步進行從該模具所獲得的模塑主體切掉頂端及底端的步驟,其中該頂端及底端各者係該模塑主體的總厚度之1/12至1/4。
在該切割步驟後,上述製造方法可進一步包含下列步驟:在該模塑主體的表面上切削出溝紋,與下部分黏合,檢驗,包裝及其類似步驟。這些步驟可以習知用以製造抛光墊的方式進行。
在根據如上所述的方法製造之抛光墊中,以該抛光墊的截面積為基準,在該等孔洞的孔洞尺寸分佈中,於最大波峰處的孔洞尺寸係小於平均孔洞尺寸,在最大波峰處的孔洞尺寸係18至28微米,平均孔洞尺寸係24至36微米,及具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多之孔洞的截面積總和係大於具有孔洞尺寸大於在最大波峰處的孔洞尺寸有10微米至少於15微米之孔洞的截面積總和。 發明模式
於此之後,將藉由下列實施例詳細解釋本發明。但是,提出這些實施例以闡明本發明,及本發明之範圍不限於此。 實施例 實施例1:多孔性聚胺甲酸酯抛光墊之製造 1-1:裝置組態
在配備有用於胺甲酸酯基底的預聚物、固化劑、惰性氣體及反應速率控制劑之進料線的鑄塑機器中,將具有未反應的NCO含量9.1重量%之PUGL-550D(由SKC供應)充入該預聚物槽,及將雙(4-胺基-3-氯苯基)甲烷(由Ishihara供應)充入固化劑槽。製備氮(N2
)作為惰性氣體及反應促進劑(三級胺化合物,由Air Products以A1之商標名稱供應)作為反應速率控制劑。此外,以100重量份胺甲酸酯基底的預聚物為基準,預先混合2重量份的固相發泡劑(由AkzoNobel以Expancel 461 DET 20 d40之商標名稱供應,具有平均孔洞尺寸20微米)及1重量份之聚矽氧基底的界面活性劑(由Evonik以B8462之商標名稱供應),然後將其充入預聚物槽。 1-2:薄板之製造
當經由各別進料線以固定速率將該胺甲酸酯基底的預聚物、固化劑、反應速率控制劑及惰性氣體進料至混合頭時,攪拌其。在此事件中,將於該胺甲酸酯基底的預聚物中之NCO基團對在該固化劑中之反應性基團的莫耳當量比率調整至1:1,及將總進料量維持在10公斤/分鐘之速率下。此外,該惰性氣體係持續地以25%之體積進料,以該胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑之總體積為基準。該反應速率控制劑係以1重量份之量進料,以100重量份胺甲酸酯基底的預聚物為基準。
將混合的原料注入模具(具有寬度1,000毫米,長度1,000毫米及高度3毫米)中並固化以獲得薄板。之後,使用研磨器來研磨該多孔性聚胺甲酸酯的表面,然後使用尖端來開槽以便該多孔性聚胺甲酸酯具有平均厚度2毫米。
在120℃下,以熱熔融膜(由SKC以TF-00之商標名稱供應)來熱黏合該多孔性聚胺甲酸酯與麂皮(具有平均厚度1.1毫米的基材層)而製造出一抛光墊。 測試實施例
根據下列條件及程序來測量在實施例1中所製造的抛光墊之性質。結果係顯示在下列表1及圖1及2中。 (1)硬度
測量Shore D硬度。將該抛光墊切割成尺寸2公分×2公分(厚度2毫米),然後允許在溫度23℃、30℃、50℃及70℃及濕度50±5%之條件下靜置16小時。之後,使用硬度計量器(D-型式硬度計量器)來測量該抛光墊的硬度。 (2)比重
將該抛光墊切割成4公分×8.5公分的矩形(厚度2毫米),然後允許在溫度23±2℃及濕度50±5%之條件下靜置16小時。使用重力計來測量抛光墊比重。 (3)平均孔洞尺寸及孔洞尺寸分佈
將抛光墊切割成2公分×2公分的方形(厚度2毫米)並以掃描式電子顯微鏡(SEM)在100倍的倍率下觀察。使用影像分析軟體獲得影像及從該影像來測量整體孔洞的尺寸,從其計算出平均孔洞尺寸、孔洞尺寸分佈及孔洞面積比率。因此計算之孔洞尺寸分佈係顯示在圖1中及SEM相片係顯示在圖2中。 (4)抗張強度
測量立即在破裂前之最終強度,同時使用萬能試驗機(UTM)以50毫米/分鐘之速率來測試該抛光墊。 (5)伸長度
使用與抗張強度測量相同的方式來進行測試。測量立即在破裂前之最大變形量,及最大變形量對初始長度的比率係以百分比(%)表示。 (6)模數
使用與抗張強度測量相同的方式來進行測試。計算應變-應力曲線在初始彈性區域中的斜率。 (7)表面粗糙度(Ra)
使用3D觀測器來測量面積2.5毫米×1.9毫米的抛光墊之表面粗糙度,及根據ISO 25178-2:2012粗糙度標準來計算表面粗糙度(Ra)。 (8)鎢及氧化矽的抛光速率
將具有尺寸300毫米與藉由CVD方法形成的鎢層之矽晶圓固定在CMP抛光機器中。將該矽晶圓固定在安裝於平台上的抛光墊上,同時該矽晶圓的鎢層係面向下。之後,在2.8 psi之抛光負載下,同時以115 rpm之速度轉動該平台來抛光該鎢層30秒,及以190毫升/分鐘之速率將鎢漿體供應到抛光墊上。在完成抛光後,分離該矽晶圓與載體,將該晶圓安裝於旋轉乾燥器上,以純水(DIW)清洗,然後以空氣乾燥15秒。使用接觸型薄片電阻測量儀器(使用4點探針)來測量該經乾燥的矽晶圓層在抛光前及後之厚度。然後,以下列方程式1來計算抛光速率。 [方程式1] 抛光速率=被抛光的矽晶圓厚度(埃)/抛光時間(分鐘)
此外,在相同裝置中進行與上述相同的程序,除了使用具有尺寸300毫米與藉由TEOS-電漿CVD方法形成的氧化矽層之矽晶圓來取代該具有鎢層的矽晶圓外。將矽晶圓固定在安裝於平台上的抛光墊上,同時矽晶圓的氧化矽層係面向下。之後,在1.4 psi之抛光負載下,同時以115 rpm之速度轉動該平台60秒來抛光氧化矽層,及將鍛燒型二氧化矽漿體以190毫升/分鐘之速率供應到該抛光墊上。在完成抛光後,分離該矽晶圓與載體,將該晶圓安裝在旋轉乾燥器上,以純水(DIW)清洗,然後以空氣乾燥15秒。使用光譜反射儀型式厚度測量儀器(由Kyence以SI-F80R之型號供應)來測量該經乾燥的矽晶圓在抛光前及後之層厚度。然後,使用上述方程式1來計算抛光速率。 [表1]
如顯示在圖1及表1中,以實施例1的抛光墊之面積為基準,於該等孔洞之孔洞尺寸分佈中,在最大波峰處的孔洞尺寸係23微米及在最大波峰處的孔洞尺寸係小於平均孔洞尺寸。此外,具有孔洞尺寸大於在最大波峰處的孔洞尺寸有15微米或更多之孔洞的截面積總和係14.8%,及具有孔洞尺寸大於在最大波峰處的孔洞尺寸有10微米至少於15微米之孔洞的截面積總和係7.3%,以該等孔洞的總面積100%為基準。
此外,如顯示在表1中,當鎢的抛光速率係1時,實施例1之抛光墊具有氧化矽(SiOx
)抛光速率係0.93。
A‧‧‧在最大波峰處的孔洞尺寸
圖1係一曲線圖,其顯示出以在實施例1中所製造的多孔性聚胺甲酸酯抛光墊之截面積為基準的孔洞尺寸分佈。 圖2係在實施例1中所製造的多孔性聚胺甲酸酯抛光墊之SEM相片。
Claims (12)
- 一種多孔性聚胺甲酸酯抛光墊,其包含一聚胺甲酸酯樹脂及分佈在該聚胺甲酸酯樹脂中的孔洞,其中以該抛光墊的截面積為基準,在該等孔洞的孔洞尺寸分佈中,於最大波峰處的孔洞尺寸係小於平均孔洞尺寸;在最大波峰處的孔洞尺寸係18至28微米;平均孔洞尺寸係24至36微米;及具有孔洞尺寸比在最大波峰處的孔洞尺寸大15微米或更多的孔洞之截面積總和,係大於具有孔洞尺寸比在最大波峰處的孔洞尺寸大10微米至小於15微米的孔洞之截面積總和。
- 如請求項1之多孔性聚胺甲酸酯抛光墊,其中以該等孔洞的截面積總和100%為基準,在具有孔洞尺寸比在最大波峰處的孔洞尺寸大15微米或更多之孔洞的截面積總和,與具有孔洞尺寸比在最大波峰處的孔洞尺寸大10微米至小於15微米之孔洞的截面積總和間的差異係1至10%。
- 如請求項2之多孔性聚胺甲酸酯抛光墊,其中以該等孔洞的截面積總和100%為基準,在具有孔洞尺寸比在最大波峰處的孔洞尺寸大15微米或更多之孔洞的截面積總和,與具有孔洞尺寸比在最大波峰處的孔洞尺寸大10微米至小於15微米之孔洞的截面積總和間的差異 係5至9%。
- 如請求項1之多孔性聚胺甲酸酯抛光墊,其中該孔洞包含由固相發泡劑形成的第一孔洞及由氣相發泡劑形成的第二孔洞。
- 如請求項4之多孔性聚胺甲酸酯抛光墊,其中該第二孔洞包含具有孔洞尺寸比在最大波峰處的孔洞尺寸大15微米或更多之孔洞,及具有孔洞尺寸小於在最大波峰處的孔洞尺寸之孔洞。
- 如請求項1之多孔性聚胺甲酸酯抛光墊,其進一步包含至少一種選自於由以三級胺為基底的化合物及有機金屬化合物所組成之群的反應速率控制劑;及以聚矽氧為基底的界面活性劑。
- 如請求項6之多孔性聚胺甲酸酯抛光墊,其中該反應速率控制劑包含選自於由下列所組成之群的至少一種:三伸乙基二胺、二甲基乙醇胺、四甲基丁烷二胺、2-甲基-三伸乙基二胺、二甲基環己基胺、三乙基胺、三異丙醇胺、1,4-二吖雙環(2,2,2)辛烷(1,4-diazabicyclo(2,2,2)octane)、雙(2-甲基胺基乙基)醚、三甲基胺基乙基乙醇胺、N,N,N,N,N”-五甲基二伸乙基三胺、二甲基胺基乙基胺、二甲基胺基丙基胺、苄基二甲基胺、N-乙基嗎福啉、N,N-二甲基胺基乙基嗎福啉、N,N-二甲基環己基胺、2-甲基-2-吖降烷(2-methyl-2-azanorbornane)、二月桂酸二丁錫、辛酸亞錫、二醋酸二丁基錫、二醋酸二辛基錫、順丁烯二酸二丁 基錫、二-2-乙基己酸二丁基錫及二硫醇二丁基錫。
- 如請求項1之多孔性聚胺甲酸酯抛光墊,其在最大波峰處的孔洞尺寸係比平均孔洞尺寸小1至10微米。
- 如請求項1之多孔性聚胺甲酸酯抛光墊,當鎢的抛光速率係1時,其具有氧化矽(SiOx)抛光速率為0.8至0.99。
- 一種用以製造如請求項1之多孔性聚胺甲酸酯抛光墊的方法,其包含當混合胺甲酸酯基底的預聚物、固化劑、固相發泡劑、反應速率控制劑及聚矽氧基底的界面活性劑時,注入惰性氣體,以模塑該混合物同時形成孔洞,其中該固相發泡劑的使用量係1至3重量份,以100重量份的該胺甲酸酯基底的預聚物為基準。
- 如請求項10之方法,其中該反應速率控制劑係至少一種選自於由以三級胺為基底的化合物及有機金屬化合物所組成之群的反應促進劑。
- 如請求項10之方法,其中以該抛光墊的截面積為基準,在該等孔洞之孔洞尺寸分佈中,於最大波峰處的孔洞尺寸係小於平均孔洞尺寸;在最大波峰處的孔洞尺寸係18至28微米;平均孔洞尺寸係24至36微米;及具有孔洞尺寸比在最大波峰處的孔洞尺寸大15微米或更多的孔洞之截面積總和,係大於具有孔洞尺寸比在最 大波峰處的孔洞尺寸大10微米至小於15微米之孔洞的截面積總和。
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KR101853021B1 (ko) * | 2017-01-12 | 2018-04-30 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
KR102058877B1 (ko) * | 2018-04-20 | 2019-12-24 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
CN110003668A (zh) * | 2019-03-06 | 2019-07-12 | 中国科学院上海光学精密机械研究所 | 多微孔结构的沥青抛光盘及其制备方法 |
KR102174958B1 (ko) * | 2019-03-27 | 2020-11-05 | 에스케이씨 주식회사 | 결함 발생을 최소화시키는 연마패드 및 이의 제조방법 |
TWI827890B (zh) * | 2019-10-23 | 2024-01-01 | 南韓商Sk恩普士股份有限公司 | 用於研磨墊之組成物及研磨墊 |
TWI741753B (zh) * | 2019-10-29 | 2021-10-01 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
KR102304965B1 (ko) * | 2019-10-30 | 2021-09-24 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
KR102188525B1 (ko) * | 2019-10-29 | 2020-12-08 | 에스케이씨 주식회사 | 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
KR102293765B1 (ko) * | 2019-11-21 | 2021-08-26 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
KR102293801B1 (ko) * | 2019-11-28 | 2021-08-25 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
JP7105334B2 (ja) * | 2020-03-17 | 2022-07-22 | エスケーシー ソルミックス カンパニー,リミテッド | 研磨パッドおよびこれを用いた半導体素子の製造方法 |
KR102237326B1 (ko) * | 2020-06-19 | 2021-04-07 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
KR102237316B1 (ko) * | 2020-06-19 | 2021-04-07 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
KR102237311B1 (ko) * | 2020-06-19 | 2021-04-07 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
US11759909B2 (en) * | 2020-06-19 | 2023-09-19 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
KR102502516B1 (ko) * | 2021-03-12 | 2023-02-23 | 에스케이엔펄스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
KR102594068B1 (ko) | 2021-10-12 | 2023-10-24 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
CN114536212B (zh) * | 2022-01-29 | 2024-02-09 | 浙江环龙新材料科技有限公司 | 一种微孔热塑性聚氨酯抛光垫及其半连续制备方法 |
CN114750069B (zh) * | 2022-03-17 | 2023-01-24 | 安徽禾臣新材料有限公司 | 一种用于新能源汽车气缸内壁的精细抛光垫 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017265A (en) * | 1995-06-07 | 2000-01-25 | Rodel, Inc. | Methods for using polishing pads |
US6986705B2 (en) * | 2004-04-05 | 2006-01-17 | Rimpad Tech Ltd. | Polishing pad and method of making same |
US7074115B2 (en) * | 2003-10-09 | 2006-07-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad |
CN101077569A (zh) * | 2006-05-25 | 2007-11-28 | 罗门哈斯电子材料Cmp控股股份有限公司 | 化学机械抛光垫 |
KR20160027075A (ko) * | 2013-07-31 | 2016-03-09 | 넥스플래너 코퍼레이션 | 저밀도 폴리싱 패드 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL132412A0 (en) * | 1997-04-18 | 2001-03-19 | Cabot Corp | Polishing pad for a semiconductor substrate |
US6477926B1 (en) * | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
US8545583B2 (en) * | 2000-11-17 | 2013-10-01 | Wayne O. Duescher | Method of forming a flexible abrasive sheet article |
JP3494641B1 (ja) | 2001-12-12 | 2004-02-09 | 東洋紡績株式会社 | 半導体ウエハ研磨用研磨パッド |
US6913517B2 (en) * | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
JP4475404B2 (ja) * | 2004-10-14 | 2010-06-09 | Jsr株式会社 | 研磨パッド |
KR20110019442A (ko) * | 2008-06-26 | 2011-02-25 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법 |
US8702479B2 (en) * | 2010-10-15 | 2014-04-22 | Nexplanar Corporation | Polishing pad with multi-modal distribution of pore diameters |
JP2013086217A (ja) * | 2011-10-19 | 2013-05-13 | Dic Corp | 研磨パッド用ウレタン樹脂組成物、ポリウレタン研磨パッド及びポリウレタン研磨パッドの製造方法 |
JP2014111296A (ja) * | 2012-11-05 | 2014-06-19 | Toyo Tire & Rubber Co Ltd | 研磨パッド及びその製造方法 |
US10946495B2 (en) * | 2015-01-30 | 2021-03-16 | Cmc Materials, Inc. | Low density polishing pad |
-
2017
- 2017-08-23 KR KR1020170106466A patent/KR101949905B1/ko active IP Right Grant
-
2018
- 2018-08-22 TW TW107129322A patent/TWI694102B/zh active
- 2018-08-22 JP JP2018155575A patent/JP6688845B2/ja active Active
- 2018-08-22 US US16/108,607 patent/US11724356B2/en active Active
- 2018-08-22 CN CN201810959187.6A patent/CN109048646B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017265A (en) * | 1995-06-07 | 2000-01-25 | Rodel, Inc. | Methods for using polishing pads |
US7074115B2 (en) * | 2003-10-09 | 2006-07-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad |
US6986705B2 (en) * | 2004-04-05 | 2006-01-17 | Rimpad Tech Ltd. | Polishing pad and method of making same |
CN101077569A (zh) * | 2006-05-25 | 2007-11-28 | 罗门哈斯电子材料Cmp控股股份有限公司 | 化学机械抛光垫 |
KR20160027075A (ko) * | 2013-07-31 | 2016-03-09 | 넥스플래너 코퍼레이션 | 저밀도 폴리싱 패드 |
Also Published As
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KR101949905B1 (ko) | 2019-02-19 |
TW201920402A (zh) | 2019-06-01 |
CN109048646B (zh) | 2021-06-29 |
US20190061097A1 (en) | 2019-02-28 |
US11724356B2 (en) | 2023-08-15 |
JP6688845B2 (ja) | 2020-04-28 |
CN109048646A (zh) | 2018-12-21 |
JP2019069507A (ja) | 2019-05-09 |
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