CN109048646A - 多孔性聚氨酯抛光垫及其制造方法 - Google Patents

多孔性聚氨酯抛光垫及其制造方法 Download PDF

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Publication number
CN109048646A
CN109048646A CN201810959187.6A CN201810959187A CN109048646A CN 109048646 A CN109048646 A CN 109048646A CN 201810959187 A CN201810959187 A CN 201810959187A CN 109048646 A CN109048646 A CN 109048646A
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peak
hole
polishing pad
partial size
amine
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CN109048646B (zh
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徐章源
韩赫熙
许惠映
柳俊城
权荣弼
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Sk Enpus Co ltd
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SKC Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
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Abstract

实施方案涉及一种用于半导体的化学机械平坦化(chemical mechanical planarization,CMP)工艺的多孔性聚氨酯抛光垫及其制造方法，所述多孔性聚氨酯抛光垫使用作为固相发泡剂的热膨胀微胶囊及作为气相发泡剂的惰性气体来调节气孔的大小及分布，从而可以调节抛光性能(抛光率)。

Description

多孔性聚氨酯抛光垫及其制造方法
技术领域
实施方案涉及一种用于半导体的化学机械平坦化(chemical mechanicalplanarization,CMP)工艺的多孔性聚氨酯抛光垫(porous polyurethane polishing pad)及其制造方法。
背景技术
半导体制造工艺中的化学机械平坦化(CMP)工艺为如下工艺，将晶片(wafer)附着在头部上，与形成在压板(platen)上的抛光垫表面接触的状态下，提供研浆，从而使晶片表面发生化学反应，与此同时使压板和头部相对运动，机械地平坦化晶片表面的凹凸部分。
在这样的CMP工艺中，抛光垫是起重要作用的必不可少的材料，通常由聚氨酯系列的树脂构成，其表面具有负责研浆的大流动的凹槽(groove)和支持细微流动的孔(pore)。
抛光垫中的孔，可利用具有空隙的固相发泡剂、填充有挥发性液体的液相发泡剂、惰性气体、纤维等来形成，或者通过化学反应产生气体来形成。
使用惰性气体或挥发性液相发泡剂来形成孔的技术具有如下优点：没有可能影响CMP工艺的排除物质。然而，由于需要控制难以控制的气相，所以难以精确地控制孔的粒径及垫(pad)的密度，特别是难以制作50μm以下的均匀的孔。此外，存在如下问题，如果不改变抛光垫用聚氨酯基体(polyurethane matrix)的组成，就很难控制孔的粒径和垫的密度。
作为所述固相发泡剂，使用热膨胀后调整尺寸的微胶囊(热膨胀的微胶囊)。所述热膨胀微胶囊作为已经膨胀的微球(micro balloon)构造体，具有大小均匀的粒径，因此可以均匀调整孔的粒径大小。然而，所述热膨胀微胶囊具有如下缺点：其形象在100℃以上的高温反应条件下发生变化，从而难以调节气孔。
因此，如现有技术那般使用一种发泡剂形成微细气孔时，虽然能够实现符合所设计的气孔大小和分布的气孔，但是气孔的设计自由度低且调节气孔分布存在限度。
韩国公开专利第2016-0027075号揭示了一种使用惰性气体和气孔诱导聚合物的低密度抛光垫(polishing pad)的制造方法及低密度抛光垫。然而，对于调节气孔的大小和分布、以及抛光垫的抛光率，所述公开专利根本没有揭示。
现有技术文献
专利文献
专利文献1：韩国公开专利第2016-0027075号
发明要解决的课题
因此，实施方案的目的是提供一种多孔性聚氨酯抛光垫及其制造方法，将惰性气体及热膨胀微胶囊用作发泡剂来调节气孔的大小及分布。
发明内容
为了达成上述目的，一实施方案提供一种多孔性聚氨酯抛光垫，包含聚氨酯树脂及分散在所述聚氨酯树脂内的多孔(pore)，
以抛光垫的截面为基准的所述多孔的粒径分布中，
最大峰值(peak)的孔的粒径小于孔的平均粒径，
所述最大峰值的孔的粒径为18至28μm，
所述孔的平均粒径为24至36μm，
具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和大于具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和。
其他实施方案提供一种多孔性聚氨酯抛光垫的制造方法，
包括在混合氨基甲酸乙酯(urethane)类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅(silicon)表面活性剂时投入惰性气体来形成多孔(pore)并成型的步骤，
以所述氨基甲酸乙酯类预聚物100重量份为基准，所述固相发泡剂的用量为1至3重量份。
发明效果
实施方案所涉及的多孔性聚氨酯抛光垫，其使用作为固相发泡剂的热膨胀微胶囊及作为气相发泡剂的惰性气体来调整气孔的大小及分布，从而可以调节抛光性能(抛光率)。
附图说明
图1是以实施例1中制造的多孔性聚氨酯抛光垫的截面为基准的多孔的粒径分布图。
图2是实施例1中制造的多孔性聚氨酯抛光垫的SEM照片。
具体实施方式
多孔性聚氨酯抛光垫
一实施方案的多孔性聚氨酯抛光垫是一种包含聚氨酯树脂及分散在所述聚氨酯树脂内的多孔(pore)的多孔性聚氨酯抛光垫，以抛光垫的截面为基准的所述多孔的粒径分布中，
最大峰值的孔的粒径小于孔的平均粒径，所述最大峰值的孔的粒径为18至28μm，所述孔的平均粒径为24至36μm，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和大于具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和。
所述多孔性聚氨酯抛光垫是由聚氨酯树脂构成，所述聚氨酯树脂可以衍生自具有异氰酸酯端基(isocyanate terminal group)的氨基甲酸乙酯(urethane)类预聚物。在这种情况下，所述聚氨酯树脂包括构成所述预聚物的单体单元(monomer unit)。
所谓预聚物(prepolymer)，通常是指具有比较低的分子量的高分子，其在制造一种最终成型品时，为了便于成型，在中间阶段中断聚合度。预聚物可通过其自身成型或者与其它聚合性化合物反应后成型。例如，预聚物可通过使异氰酸酯化合物(isocyanatecompound)与多元醇(polyol)反应来制备。
用于制备氨基甲酸乙酯类预聚物的异氰酸酯化合物可以是选自由诸如甲苯二异氰酸酯(toluene diisocyanate,TDI)、1,5-萘二异氰酸酯(naphthalene-1,5-diisocyanate)、对苯二异氰酸酯(p-phenylene diisocyanate)、联苯二异氰酸酯(tolidine diisocyanate)、4,4'-二苯基甲烷二异氰酸酯(4,4'-diphenyl methanediisocyanate)、六亚甲基二异氰酸酯(hexamethylene diisocyanate)、二环己基甲烷二异氰酸酯(dicyclohexylmethane diisocyanate)及异丙酮二异氰酸酯(isophoronediisocyanate)构成的群的一种以上的异氰酸酯。
可以用于制备所述氨基甲酸乙酯类预聚物的多元醇可以是选自由诸如聚醚多元醇(polyether polyol)、聚酯多元醇(polyester polyol)、聚碳酸酯多元醇(polycarbonate polyol)及丙烯酸多元醇(acryl polyol)构成的群的一种以上的多元醇。所述多元醇可以具有300至3,000g/mol的重均分子量(Mw)。
所述聚氨酯树脂可以具有500至3,000g/mol的重均分子量。具体地，所述聚氨酯树脂可以具有600至2,000g/mol或者700至1,500g/mo的重均分子量(Mw)。
孔
所述多孔分散存在于所述聚氨酯树脂中。具体地，所述多孔可以源自作为固相发泡剂的热膨胀的微胶囊或由惰性气体来形成。
参照图1，以所述多孔的截面之和100％为基准的所述多孔的粒径分布中，最大峰值的孔的粒径小于孔的平均粒径，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和大于具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的多孔的截面之和。具体地，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和与具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和的差异可以是1至10％或者5至9％。
所述最大峰值的孔的粒径为18至28μm，所述孔的平均粒径为24至36μm。具体地，所述最大峰值的孔的粒径可以比孔的平均粒径小1至10μm。更具体地，所述最大峰值的孔的粒径可以比孔的平均粒径小5至10μm或者5至8μm。
以抛光垫的总覆盖为基准，所述多孔性聚氨酯抛光垫可包含30至70覆盖％或30至60覆盖％的多孔。
所述多孔可包括通过固相发泡剂形成的第一孔及通过气相发泡剂形成的第二孔。具体地，所述第二孔可包括具有比所述最大峰值的孔的粒径大15μm以上的粒径的孔及具有比所述最大峰值的孔的粒径小的粒径的孔。
其他添加剂
所述多孔性聚氨酯抛光垫可进一步包括选自由叔胺化合物(tertiary aminecompound)及有机金属化合物构成的群的一种以上的反应速度调节剂及有机硅表面活性剂(silicone surfactant)。
所述反应速度调节剂可以是反应促进剂或反应迟延剂。具体地，所述反应速度调节剂可以是反应促进剂。例如，所述反应速度调节剂可以包括选自由三乙烯二胺(triethylene diamine,TEDA)、二甲基乙醇胺(dimethyl ethanol amine,DMEA)、四甲基丁二胺(tetramethyl butane diamine,TMBDA)、2-甲基-三乙烯二胺(2-methyl-triethylenediamine)、二甲基环己胺(dimethyl cyclohexyl amine,DMCHA)、三乙胺(triethyl amine,TEA)、三异丙醇胺(triisopropanol amine,TIPA)、1,4-二氮杂双环(2,2,2)辛烷(1,4-diazabicyclo(2,2,2)octane)、双(2-甲基氨基乙基)醚(bis(2-methylaminoethyl)ether)、三甲基氨基乙基乙醇胺(trimethylaminoethylethanol amine)、N，N，N，N，N”-五甲基二亚乙基三胺(N,N,N,N,N”-pentamethyldiethylene triamine)、二甲氨基乙胺(dimethylaminoethyl amine)、二甲氨基丙胺(dimethylaminopropyl amine)、苄基二甲胺(benzyldimethyl amine)、N-乙基吗啉(N-ethylmorpholine)、N，N-二甲基氨基乙基吗啉(N,N-dimethylaminoethylmorpholine)、N，N-二甲基环己胺(N,N-dimethylcyclohexylamine)、2-甲基-2-氮杂降冰片烷(2-methyl-2-azanorbornane)、二月桂酸二丁基锡(dibutyltin dilaurate)、辛酸亚锡(stannous octoate)、二乙酸二丁基锡(dibutyltindiacetate)、二乙酸二辛基锡(dioctyltin diacetate)、马来酸二丁基锡(dibutyltinmaleate)、二丁基锡二-2-乙基己酸酯(dibutyltin di-2-ethylhexanoate)及二丁锡二聚卡普迪特(dibutyltin dimercaptide)构成的群的一种以上。具体地，所述反应速度调节剂可以包括选自由苄基二甲胺(benzyldimethyl amine)、N，N-二甲基环己胺(N,N-dimethylcyclohexyl amine)、三乙胺(triethyl amine,TEA)构成的群的一种以上。
有机硅表面活性剂
所述有机硅表面活性剂用于防止所形成的多孔的重叠和聚结现象，只要是通常用于抛光垫的制造的，其种类就没有特别限制。
抛光垫的物理特性
所述多孔性聚氨酯抛光垫可具有1至5mm的厚度。具体地，所述多孔性聚氨酯抛光垫可具有1至3mm、1至2.5mm、1.5至5mm、1.5至3mm、1.5至2.5mm、1.8至5mm、1.8至3mm或1.8至2.5mm的厚度。当抛光垫的厚度在上述范围内时，可以充分发挥作为抛光垫的基本物理特性。
所述多孔性聚氨酯抛光垫表面可具有用于机械抛光的凹槽(groove)。所述凹槽可具有用于机械抛光的适当的深度、宽度和间隔，并没有特别限制。
所述多孔性聚氨酯抛光垫的密度及物理特性可通过由异氰酸酯和多元醇的反应而聚合的氨基甲酸乙酯(urethane)类预聚物的分子结构来调节。具体地，所述多孔性聚氨酯抛光垫可具有30至80Shore D的硬度。更具体地，所述多孔性聚氨酯抛光垫可具有40至70Shore D的硬度。
具体地，所述多孔性聚氨酯抛光垫可具有0.6至0.9g/cm3的比重。更具体地，所述多孔性聚氨酯抛光垫可具有0.7至0.85g/cm3的比重。
具体地，所述多孔性聚氨酯抛光垫可具有10至100kgf/cm2的拉伸强度。更具体地，所述多孔性聚氨酯抛光垫可具有15至70kgf/cm2的拉伸强度。
具体地，所述多孔性聚氨酯抛光垫可具有30％至300％的伸长率。更具体地，所述多孔性聚氨酯抛光垫可具有50％至200％的伸长率。
当钨(tungsten)的抛光率为1时，所述多孔性聚氨酯抛光垫可具有0.8至0.99的氧化硅(SiOx)的抛光率。具体地，当钨的抛光率为1时，所述多孔性聚氨酯抛光垫可具有0.82至0.98的氧化硅的抛光率。更具体地，所述多孔性聚氨酯抛光垫可具有/分钟至/分钟、/分钟至/分钟或/分钟至/分钟的氧化硅的抛光率。
多孔性聚氨酯抛光垫的制造方法
根据一个实施方案，提供一种多孔性聚氨酯抛光垫的制造方法，包括在混合氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂时投入惰性气体来形成多孔(pore)的并成型的步骤，
以所述氨基甲酸乙酯类预聚物100重量份为基准，所述固相发泡剂的用量为1至3重量份。
原料投入
如上所述，所述氨基甲酸乙酯类预聚物可通过使异氰酸酯化合物与多元醇反应来制备。所述异氰酸酯化合物及多元醇的具体种类如前面抛光垫中所例示。
所述氨基甲酸乙酯类预聚物可具有500至3,000g/mol的重均分子量。具体地，所述氨基甲酸乙酯类预聚物可具有600至2,000g/mol或这800至1,000g/mol的重均分子量(Mw)。
作为实例，所述氨基甲酸乙酯类预聚物可以是使用作为异氰酸酯化合物的甲苯二异氰酸酯(toluene diisocyanate)和作为多元醇的聚四亚甲基醚二醇(polytetramethylene ether glycol)来聚合的重均分子量(Mw)为500至3,000g/mol的高分子。
固化剂
所述固化剂可以是胺化合物及醇化合物中的一种以上。具体地，所述固化剂可包括选自由芳香胺、脂族胺、芳香醇及脂肪醇构成的群的一种以上。
例如，所述固化剂可以是选自由4,4'-亚甲基双(2-氯苯胺)(MOCA)、二乙基甲苯二胺(diethyltoluenediamine)、二氨基二苯基甲烷(diaminodiphenyl methane)、二氨基二苯砜(diaminodiphenyl sulphone)、间苯二甲胺(m-xylylene diamine)、异佛尔酮二胺(isophoronediamine)、乙二胺(ethylenediamine)、二乙烯三胺(diethylenetriamine)、三乙烯四胺(triethylenetetramine)、聚丙烯二胺(polypropylenediamine)、聚丙烯三胺(polypropylenetriamine)、乙二醇(ethyleneglycol)、二甘醇(diethyleneglycol)、二丙二醇(dipropyleneglycol)、丁二醇(butanediol)、己二醇(hexanediol)、甘油(glycerine)、三羟甲基丙烷(trimethylolpropane)及双(4-氨基-3-氯苯基)甲烷(bis(4-amino-3-chlorophenyl)methane)构成的群的一种以上。
固相发泡剂
所述固相发泡剂是热膨胀(调整大小)的微胶囊，可以是平均粒径为5至200μm的微球构造体。所述热膨胀(调整大小)的微胶囊可通过使热膨胀性微胶囊加热膨胀来获得。
所述热膨胀性微胶囊可包括含有热可塑性树脂的外皮及被封入所述外皮内的发泡剂。所述热可塑性树脂可以是选自由偏二氯乙烯共聚物(vinylidene chloridecopolymer)、丙烯腈共聚物(acrylonitrile copolymer)、甲基丙烯腈共聚物(methacrylonitrile copolymer)及丙烯酸共聚物(acryl copolymer)构成的群的一种以上。进一步，所述被封入内部的发泡剂是选自由具有1至7个碳原子的烃构成的群的一种以上。具体地，所述被封入内部的发泡剂可以选自由乙烷(ethane)、乙烯(ethylene)、丙烷(propane)、丙烯(propene)、正丁烷(n-butane)、异丁烯(isobutane)、丁烯(butene)、异丁烯(isobutene)、正戊烷(n-pentane)、异戊烷(isopentane)、新戊烷(neopentane)、正己烷(n-hexane)、庚烷(heptane)、石油醚(petroleum ether)等低分子量烃(lowmolecularhydrocarbons)；三氯氟甲烷(trichlorofluoromethane,CCl3F)、二氯二氟甲烷(dichlorodifluoromethane,CCl2F2)、三氟氯甲烷(chlorotrifluoromethane,CClF3)、四氟乙烯(tetrafluoroethylene,CClF2-CClF2)等氯氟烃(chlorofluorohydrocarbon)；以及四甲基硅烷(tetramethylsilane)、三甲基乙基硅烷(trimethylethylsilane)、三甲基异丙基硅烷(trimethylisopropylsilane)、三甲基正丙基硅烷(trimethyl-n-propylsilane)等四烷基硅烷(tetraalkylsilane)构成的群。
以所述氨基甲酸乙酯类预聚物100重量份为基准，所述固相发泡剂的用量为可以使用1至3重量份。具体地，按照所述氨基甲酸乙酯类预聚物100重量份为基准，所述固相发泡剂的用量为1.3至2.7重量份或1.3至2.6重量份。
反应速度调节剂
所述反应速度调节剂可以是选自由叔胺化合物及有机金属化合物构成的群的一种以上的反应促进剂。具体地，所述反应促进剂可包括选自由三乙烯二胺(triethylenediamine,TEDA)、二甲基乙醇胺(dimethyl ethanol amine,DMEA)、四甲基丁二胺(tetramethyl butane diamine,TMBDA)、2-甲基-三乙烯二胺(2-methyl-triethylenediamine)、二甲基环己胺(dimethyl cyclohexyl amine,DMCHA)、三乙胺(triethyl amine,TEA)、三异丙醇胺(triisopropanol amine,TIPA)、1,4-二氮杂双环(2,2,2)辛烷(1,4-diazabicyclo(2,2,2)octane)、双(2-甲基氨基乙基)醚(bis(2-methylaminoethyl)ether)、三甲基氨基乙基乙醇胺(trimethylaminoethylethanol amine)、N，N，N，N，N”-五甲基二亚乙基三胺(N,N,N,N,N”-pentamethyldiethylene triamine)、二甲氨基乙胺(dimethylaminoethyl amine)、二甲氨基丙胺(dimethylaminopropyl amine)、苄基二甲胺(benzyldimethyl amine)、N-乙基吗啉(N-ethylmorpholine)、N，N-二甲基氨基乙基吗啉(N,N-dimethylaminoethylmorpholine)、N，N-二甲基环己胺(N,N-dimethylcyclohexylamine)、2-甲基-2-氮杂降冰片烷(2-methyl-2-azanorbornane)、二月桂酸二丁基锡(dibutyltin dilaurate)、辛酸亚锡(stannous octoate)、二乙酸二丁基锡(dibutyltindiacetate)、二乙酸锡二乙酸酯(dioctyltin diacetate)、马来酸二丁基锡(dibutyltinmaleate)、二丁基锡二-2-乙基己酸酯(dibutyltin di-2-ethylhexanoate)及二丁锡二聚卡普迪特(dibutyltin dimercaptide)构成的群的一种以上。具体地，所述反应速度调节剂可以包括选自由苄基二甲胺(benzyldimethyl amine)、N，N-二甲基环己胺(N,N-dimethylcyclohexyl amine)、三乙胺(triethyl amine,TEA)构成的群的一种以上。
以氨基甲酸乙酯类预聚物100重量份为基准，所述反应速度调节剂的用量可以是0.2至2重量份。具体地，以氨基甲酸乙酯类预聚物100重量份为基准，所述反应速度调节剂的用量可以是0.2至1.8重量份、0.2至1.7重量份、0.2至1.6重量份或者0.2至1.5重量份。当反应速度调节剂的含量在上述范围内时，通过适当调节混合物(氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂的混合物)的反应速度(混合物的固化时间)，可形成所期望的大小的孔。
有机硅表面活性剂
所述有机硅表面活性剂用于防止所形成的多孔的重叠和聚结现象。
以所述氨基甲酸乙酯类预聚物100重量份为基准，所述有机硅表面活性剂的含量可以是0.2至2重量份。具体地，以所述氨基甲酸乙酯类预聚物100重量份为基准，所述有机硅表面活性剂的含量可以是0.2至1.9重量份、0.2至1.8重量份、0.2至1.7重量份、0.2至1.6重量份或者0.2至1.5重量份。当反应有机硅表面活性剂的含量在上述范围内时，源自气相发泡剂的孔可以稳定地形成并保持在模具中。
惰性气体
在所述氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂混合并反应的过程中投入所述惰性气体，从而在抛光垫上形成多孔(pore)。只要是不参与预聚物和固化剂之间的反应的气体，所述惰性气体的种类就没有特别限制。例如，所述惰性气体可以是选自由氮气(N2)、氩气(Ar)及氦气(He)构成的群的一种以上。具体地，所述惰性气体可以是氮气(N2)或者氩气(Ar)。
所述惰性气体的投入量使其体积相当于氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂的总体积的15至30％。具体地，所述惰性气体的投入量使其体积相当于氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂的总体积的20至30％。
作为一个例子，氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂、有机硅表面活性剂及惰性气体，其实可以在混合过程中几乎同时投入。作为其他例子，可以先混合氨基甲酸乙酯类预聚物、固相发泡剂及有机硅表面活性剂，在此之后投入固化剂、反应速度调节剂及惰性气体。也就是说，所述反应速度调节剂不会先混入氨基甲酸乙酯类预聚物或者固化剂内。如果预先将反应速度调节剂与氨基甲酸乙酯类预聚物、固化剂等混合，则可能难以调节反应速度，特别是具有异氰酸酯端基的预聚物的稳定性可能会大大降低。
所述混合通过混合氨基甲酸乙酯类预聚物和固化剂开始反应，并将固相发泡剂和惰性气体均匀地分散在原料中。此时，反应速度调节剂从反应初期就介入氨基甲酸乙酯类预聚物和固化剂之间的反应，从而可以调节反应速度。具体地，所述混合可以以1,000至10,000rpm或这4,000至7,000rpm的速度进行。在所述速度范围内时，更有利于惰性气体及固相发泡剂被均匀分散在原料中。
以各个分子内的反应性基(reactive group)的摩尔数为基准，所述氨基甲酸乙酯类预聚物及固化剂能够以1：0.8-1.2的摩尔当量比或者1：0.9-1.1的摩尔当量比来混合。在此，所谓“以各个反应性基的摩尔数为基准”，例如，是指以氨基甲酸乙酯类预聚物的异氰酸酯基的摩尔数和固化剂的反应性基(胺基，醇基等)的摩尔数为基准。因此，为了让每单位时间的所述氨基甲酸乙酯类预聚物和固化剂的投入量满足前面所例举的摩尔当量比，调节投入速度，可在混合过程中按照一定速度来投入。
反应以及孔的形成
所述氨基甲酸乙酯类预聚物和固化剂在混合后反应以形成固相聚氨酯并制备成片材等。具体地，所述氨基甲酸乙酯类预聚物的异氰酸酯端基能够与所述固化剂的胺基、醇基等反应。此时，惰性气体及固相发泡剂并不参与氨基甲酸乙酯类预聚物与固化剂的反应但均匀地分散在原料中而形成多孔。
另外，所述反应速度调节剂通过促进或迟延氨基甲酸乙酯类预聚物与固化剂之间的反应来调节孔的粒径。例如，当所述反应速度调节剂是迟延反应的反应迟延剂时，细散在所述原料中的惰性气体彼此结合的时间增加，从而可以增大孔的平均粒径。与此相反，当所述反应速度调节剂是促进反应的反应促进剂时，细散在原料中的惰性气体彼此结合的时间减少，从而可以减小孔的平均粒径。
成型
所述成型可利用模具(mold)来进行。具体地，在混合头(mixing head)等中被充分搅拌的原料(氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂、有机硅表面活性剂及惰性气体)被注入模具中，从而可填充模具内部。氨基甲酸乙酯类预聚物与固化剂之间的反应在模具中完成，从而可以获得固化成模具形状的块(cake)状成型体。
然后，将得到的成型体适当切片(slicing)或切削，从而加工成用于制造抛光垫的片材。作为一例，用高度为最终要制造出的抛光垫厚度的5～50倍的模具成型后，将成型体以相同厚度间隔切片，从而一次性制造出多个抛光垫用片材。在这种情况下，为确保足够的固化时间，作为反应速度调节剂，可使用反应迟延剂，由此即便将模具高度定为最终要制造出的抛光垫厚度的约5倍乃至约50倍，成型后也能制造出片材。然而，被切片的片材根据其在模具内的成型位置，可能具有不同粒径的孔。也就是说，如果是在模具底部成型的片材，则具有微细粒径的多孔，与此相反，如果是在模具顶部成型的片材，则可以具有相比在底部形成的片材粒径更大的多孔。
因此，为了使各个片材之间具有均匀粒径的孔，使用一次成型可以制造一个片材的模具为佳。为此，所述模具的高度可能与最终要制造出的多孔性聚氨酯抛光垫的厚度没有显著差异。例如，所述成型可利用高度相当于最终要制造出的多孔性聚氨酯抛光垫的厚度的1至3倍的模具来进行。更具体地，所述模具的高度可以是最终要制造出的抛光垫厚度的1.1至2.5倍或者1.2至2倍。此时，为了形成粒径更加均匀的孔，作为反应速度调节剂，可使用反应促进剂。
在此之后，可分别切削通过所述模具获得的成型体的上端及下端。例如，将所述成型体的上端和下端分别切削成型体总厚度的1/3以下，或者切削1/22至3/10，或者切削1/12至1/4。
作为具体的一个例子，还可以包括如下过程，所述成型利用高度相当于最终要制造出的多孔性聚氨酯抛光垫厚度的1.2至2倍的模具来进行，所述成型之后，将通过所述模具获得的成型体的上端及下端分别切削成型体总厚度的1/12至1/4。
所述制造方法还可以包括：切削所述表面之后，在成型体的表面上加工凹槽的步骤；与下层的粘合步骤；检查步骤；包装步骤等。这些步骤可按照常规的抛光垫制造方法的方式来进行。
对于通过上述制造方法制造的抛光垫，以抛光垫的截面为基准的所述多孔的粒径分布中，最大峰值的孔的粒径小于孔的平均粒径，所述最大峰值的孔的粒径为18至28μm，所述孔的平均粒径为24至36μm，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和大于具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和。
下面，根据以下实施例更详细地描述本发明。然而，以下实施例仅用于例示本发明，本发明的范围并不限定于此。
[实施例]
实施例1.多孔性聚氨酯抛光垫的制造
1-1：设备结构
在具备氨基甲酸乙酯类预聚物、固化剂、惰性气体及反应速度调节剂注入管线的铸造设备(casting equipment)中，向预聚物罐中填充具有9.1重量％的未反应NCO的PUGL-550D(SKC公司产品)，向固化剂罐中填充双(4-氨基-3-氯苯基)甲烷(bis(4-amino-3-chlorophenyl)methane)(Ishihara公司产品)，作为惰性气体，准备氮气(N2)，作为反应速度调节剂，准备反应促进剂(制造商：Airproduct，产品名称：A1，叔胺化合物)。另外，对于100重量份的所述氨基甲酸乙酯类预聚物，先混合2重量份的固相发泡剂(制造商：Akzonobel公司，产品名称：Expancel 461 DET 20d40，平均粒径：20μm)及1重量份的有机硅表面活性剂(制造商：Evonik公司，产品名称：B8462)之后注入预聚物罐中。
1-2：制造片材
通过各自的投入管线将氨基甲酸乙酯类预聚物、固化剂、反应速度调节剂及惰性气体以一定速度投入混合头中并搅拌。此时，将氨基甲酸乙酯类预聚物的NCO基的摩尔当量和固化剂的反应性基的摩尔当量调至1：1，并将总投入量维持在10kg/分钟的速度。另外，惰性气体的投入体积为氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂总体积的25％，以氨基甲酸乙酯类预聚物100重量份为基准，反应速度调节剂的投入量为1重量份。
将搅拌的原料注入模具(长1000mm，宽1000mm，高3mm)中固化，从而得到片材。然后，使用研磨机研磨已制备的多孔性聚氨酯的表面，并经过使用尖端(tip)制作凹槽的过程，所制造出的平均厚度为2mm。
使用热熔膜(hot melt film)(制造商：SKC，产品名称：TF-00)将多孔性聚氨酯及绒面(suede)(基底层，平均厚度：1.1mm)在120℃下热熔合以制备抛光垫。
试验例
根据以下条件和程序测量所述实施例1中制备的抛光垫的各性能，并分别示于下面表1、图1及图2中。
(1)硬度
测量Shore D硬度，将抛光垫切成2cm×2cm(厚度：2mm)的大小，然后在温度为23℃、30℃、50℃及70℃、湿度为50±5％的环境中静置16小时后切割。然后使用硬度计(D型硬度计)测量抛光垫的硬度。
(2)比重
将抛光垫切成4cm×8.5cm的矩形(厚度：2mm)，然后在温度为23±2℃、湿度为50±5％的环境中静置16小时。使用比重计测量抛光垫的比重。
(3)孔的平均粒径及孔径分布图
将抛光垫切成2cm×2cm(厚度：2mm)的正方形，然后使用扫描电子显微镜(SEM)在100倍下观察影像面积。从通过使用图像分析软件获得的图像测量所有的孔的粒径，并算出孔的平均粒径、孔径分布图和孔面积比。算出的孔径分布图示于图1中，SEM照片示于图2。
(4)拉伸强度
使用万能试验机(UTM)以500mm/分钟的速度进行测试，获得断裂前的最高强度值。
(5)伸长率
用与拉伸强度测量方式相同的方式进行测试，测量出断裂之前的最大变形量后，将初始长度对比最大变形量的比率用百分比(％)来表示。
(6)modulus
用与拉伸强度测量方式相同的方式进行测试，计算Strain-Stress curve的初始弹性区域的斜率。
(7)表面粗糙度(surface roughness,Ra)
使用3D scope测量抛光垫的2.5mm×1.9mm的面积的表面粗糙度，根据ISO 25178-2：2012的粗糙度标准规格，计算表面粗糙度(Ra)。
(8)钨及氧化硅的抛光率
使用CMP抛光设备，设置通过CVD工艺形成有钨膜的直径为300mm的硅晶片。然后，将硅晶片(钨膜朝下)放置于贴有所述抛光垫的定盘上。然后，将抛光负荷调节至2.8psi，并且以190ml/分钟的速度将钨浆料加到抛光垫上，以115rpm旋转30秒定盘，对钨膜进行抛光。抛光后，将硅晶片从载体上取下，安装在旋转式干燥器(spin dryer)上，用纯净水(DIW)洗净，然后用空气干燥15秒。对于干燥的硅晶片，使用接触式面电阻测试装置(4-pointprode)测量抛光前后膜厚度的变化。然后，使用以下数学式(1)计算抛光率。
[数学式1]
另外，使用相同设备，代替形成有钨膜的硅晶片，设置通过TEOS-等离子体CVD工艺形成有氧化硅膜的直径为300mm的硅晶片。然后，将所述硅晶片(氧化硅膜朝下)放置于贴有所述抛光垫的定盘上。然后，将抛光负荷调节至1.4psi，并且将煅烧的二氧化硅浆料以190ml/分钟的速度加到抛光垫上，以115rpm旋转60秒定盘，对氧化硅膜进行抛光。抛光后，将硅晶片从载体上取下，安装在旋转式干燥器(spin dryer)上，用纯净水(DIW)洗净，然后用空气干燥15秒。对于干燥的硅晶片，使用光学干涉测厚仪(制造商：Kyence，型号：SI-F80R)测量抛光前后膜厚度的变化。然后，使用以下数学式(1)计算抛光率。
【表1】
如图1及表1所示，以实施例1的抛光垫的截面为基准的所述多孔的粒径分布图中，最大峰值的孔的粒径为23μm，最大峰值的孔的粒径小于孔的平均粒径。另外，假设多孔的总面积为100％时，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和为14.8％，具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和为7.3％。
另外，如表1所示，实施例1的抛光垫对钨的抛光率为1时，对氧化硅(SiOx)的抛光率为0.93。
【符号说明】
A：多孔的粒径中最大峰值的粒径。

Claims (12)

1.一种多孔性聚氨酯抛光垫，其包含聚氨酯树脂及分散在所述聚氨酯树脂内的多孔，
以抛光垫的截面为基准的所述多孔的粒径分布中，
最大峰值的孔的粒径小于孔的平均粒径，
所述最大峰值的孔的粒径为18至28μm，
所述孔的平均粒径为24至36μm，
具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和大于具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和。
2.如权利要求1所述的多孔性聚氨酯抛光垫，其特征在于，
以所述多孔的截面之和100％为基准，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和与具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和的差异是1至10％。
3.如权利要求1所述的多孔性聚氨酯抛光垫，其特征在于，
以所述多孔的截面之和100％为基准，具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和与具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和的差异是5至9％。
4.如权利要求1所述的多孔性聚氨酯抛光垫，其特征在于，
所述多孔包括通过固相发泡剂形成的第一孔及通过气相发泡剂形成的第二孔。
5.如权利要求4所述的多孔性聚氨酯抛光垫，其特征在于，
所述第二孔包括具有比所述最大峰值的孔的粒径大15μm以上的粒径的孔及具有比所述最大峰值的孔的粒径小的粒径的孔。
6.如权利要求1所述的多孔性聚氨酯抛光垫，其特征在于，
所述多孔性聚氨酯抛光垫进一步包括选自由叔胺化合物及有机金属化合物构成的群的一种以上的反应速度调节剂、以及有机硅表面活性剂。
7.如权利要求6所述的多孔性聚氨酯抛光垫，其特征在于，
所述反应速度调节剂包含选自由三乙烯二胺、二甲基乙醇胺(dimethyl ethanolamine,DMEA)、四甲基丁二胺(tetramethyl butane diamine,TMBDA)、2-甲基-三乙烯二胺(2-methyl-triethylene diamine)、二甲基环己胺(dimethyl cyclohexyl amine,DMCHA)、三乙胺(triethyl amine,TEA)、三异丙醇胺(triisopropanol amine,TIPA)、1,4-二氮杂双环(2,2,2)辛烷(1,4-diazabicyclo(2,2,2)octane)、双(2-甲基氨基乙基)醚(bis(2-methylaminoethyl)ether)、三甲基氨基乙基乙醇胺(trimethylaminoethylethanolamine)、N，N，N，N，N”-五甲基二亚乙基三胺(N,N,N,N,N”-pentamethyldiethylenetriamine)、二甲氨基乙胺(dimethylaminoethyl amine)、二甲氨基丙胺(dimethylaminopropyl amine)、苄基二甲胺(benzyldimethyl amine)、N-乙基吗啉(N-ethylmorpholine)、N，N-二甲基氨基乙基吗啉(N,N-dimethylaminoethylmorpholine)、N，N-二甲基环己胺(N,N-dimethylcyclohexyl amine)、2-甲基-2-氮杂降冰片烷(2-methyl-2-azanorbornane)、二月桂酸二丁基锡(dibutyltin dilaurate)、辛酸亚锡(stannousoctoate)、二乙酸二丁基锡(dibutyltin diacetate)、二乙酸二辛基锡(diocthyltindiacetate)、马来酸二丁基锡(dibutyltin maleate)、二丁基锡二-2-乙基己酸酯(dibutyltin di-2-ethylhexanoate)及二丁锡二聚卡普迪特(dibutyltin dimercaptide)构成的群的一种以上。
8.如权利要求1所述的多孔性聚氨酯抛光垫，其特征在于，
所述最大峰值的孔的粒径比孔的平均粒径小1至10μm。
9.如权利要求1所述的多孔性聚氨酯抛光垫，其特征在于，
所述多孔性聚氨酯抛光垫对钨的抛光率为1时，对氧化硅(SiOx)的抛光率为0.8至0.99。
10.一种多孔性聚氨酯抛光垫的制造方法，包括在混合氨基甲酸乙酯类预聚物、固化剂、固相发泡剂、反应速度调节剂及有机硅表面活性剂时投入惰性气体来形成多孔(pore)并成型的步骤，
以所述氨基甲酸乙酯类预聚物100重量份为基准，所述固相发泡剂的用量为1至3重量份。
11.如权利要求10所述的多孔性聚氨酯抛光垫的制造方法，其特征在于，
所述反应速度调节剂是选自由叔胺化合物及有机金属化合物构成的群的一种以上的反应促进剂。
12.如权利要求10所述的多孔性聚氨酯抛光垫的制造方法，其特征在于，
所述抛光垫在以抛光垫的截面为基准的所述多孔的粒径分布中，
最大峰值的孔的粒径小于孔的平均粒径，
所述最大峰值的孔的粒径为18至28μm，
所述孔的平均粒径为24至36μm，
具有比所述最大峰值的孔的粒径大15μm以上的粒径的多孔的截面之和大于具有比所述最大峰值的孔的粒径大10μm以上但小于15μm程度的粒径的多孔的截面之和。
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110003668A (zh) * 2019-03-06 2019-07-12 中国科学院上海光学精密机械研究所 多微孔结构的沥青抛光盘及其制备方法
CN112692725A (zh) * 2019-10-23 2021-04-23 Skc索密思株式会社 抛光垫用组合物及抛光垫
CN112824039A (zh) * 2019-11-21 2021-05-21 Skc索密思株式会社 抛光垫及其制造方法和利用其的半导体器件的制造方法
US20220152776A1 (en) * 2019-10-29 2022-05-19 Skc Solmics Co., Ltd. Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same
CN114536212A (zh) * 2022-01-29 2022-05-27 中山大学南昌研究院 一种微孔热塑性聚氨酯抛光垫及其半连续制备方法
TWI766447B (zh) * 2019-11-28 2022-06-01 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、其製備方法及使用其之半導體裝置的製備方法
CN115070608A (zh) * 2021-03-12 2022-09-20 Skc索密思株式会社 抛光垫、抛光垫的制备方法及半导体器件的制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101853021B1 (ko) * 2017-01-12 2018-04-30 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
KR102058877B1 (ko) * 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
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KR102304965B1 (ko) * 2019-10-30 2021-09-24 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR102188525B1 (ko) * 2019-10-29 2020-12-08 에스케이씨 주식회사 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
KR102237326B1 (ko) * 2020-06-19 2021-04-07 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법
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US11759909B2 (en) * 2020-06-19 2023-09-19 Sk Enpulse Co., Ltd. Polishing pad, preparation method thereof and method for preparing semiconductor device using same
KR102237316B1 (ko) * 2020-06-19 2021-04-07 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법
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CN114750069B (zh) * 2022-03-17 2023-01-24 安徽禾臣新材料有限公司 一种用于新能源汽车气缸内壁的精细抛光垫

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258241A (zh) * 1997-04-18 2000-06-28 卡伯特公司 用于半导体底物的抛光垫
JP2004001169A (ja) * 2001-12-12 2004-01-08 Toyobo Co Ltd 半導体ウエハ研磨用研磨パッド
CN1671509A (zh) * 2002-05-23 2005-09-21 卡伯特微电子公司 微孔抛光垫
JP2006111700A (ja) * 2004-10-14 2006-04-27 Jsr Corp 研磨パッド
CN101068656A (zh) * 2004-09-01 2007-11-07 卡伯特微电子公司 具有多微孔区域的抛光垫
CN102131618A (zh) * 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
JP2013539927A (ja) * 2010-10-15 2013-10-28 ネクスプラナー コーポレイション 気孔直径の多峰性分布をもつ研磨パッド
JP2014111296A (ja) * 2012-11-05 2014-06-19 Toyo Tire & Rubber Co Ltd 研磨パッド及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017265A (en) * 1995-06-07 2000-01-25 Rodel, Inc. Methods for using polishing pads
US6477926B1 (en) * 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
US8545583B2 (en) * 2000-11-17 2013-10-01 Wayne O. Duescher Method of forming a flexible abrasive sheet article
US20050276967A1 (en) * 2002-05-23 2005-12-15 Cabot Microelectronics Corporation Surface textured microporous polishing pads
US7074115B2 (en) * 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
US6986705B2 (en) * 2004-04-05 2006-01-17 Rimpad Tech Ltd. Polishing pad and method of making same
US7169030B1 (en) * 2006-05-25 2007-01-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
JP2013086217A (ja) * 2011-10-19 2013-05-13 Dic Corp 研磨パッド用ウレタン樹脂組成物、ポリウレタン研磨パッド及びポリウレタン研磨パッドの製造方法
US20150038066A1 (en) 2013-07-31 2015-02-05 Nexplanar Corporation Low density polishing pad
US10946495B2 (en) * 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258241A (zh) * 1997-04-18 2000-06-28 卡伯特公司 用于半导体底物的抛光垫
JP2004001169A (ja) * 2001-12-12 2004-01-08 Toyobo Co Ltd 半導体ウエハ研磨用研磨パッド
CN1671509A (zh) * 2002-05-23 2005-09-21 卡伯特微电子公司 微孔抛光垫
CN101068656A (zh) * 2004-09-01 2007-11-07 卡伯特微电子公司 具有多微孔区域的抛光垫
JP2006111700A (ja) * 2004-10-14 2006-04-27 Jsr Corp 研磨パッド
CN102131618A (zh) * 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
JP2013539927A (ja) * 2010-10-15 2013-10-28 ネクスプラナー コーポレイション 気孔直径の多峰性分布をもつ研磨パッド
JP2014111296A (ja) * 2012-11-05 2014-06-19 Toyo Tire & Rubber Co Ltd 研磨パッド及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110003668A (zh) * 2019-03-06 2019-07-12 中国科学院上海光学精密机械研究所 多微孔结构的沥青抛光盘及其制备方法
CN112692725A (zh) * 2019-10-23 2021-04-23 Skc索密思株式会社 抛光垫用组合物及抛光垫
US20220152776A1 (en) * 2019-10-29 2022-05-19 Skc Solmics Co., Ltd. Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same
US11931856B2 (en) * 2019-10-29 2024-03-19 Sk Enpulse Co., Ltd. Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same
CN112824039A (zh) * 2019-11-21 2021-05-21 Skc索密思株式会社 抛光垫及其制造方法和利用其的半导体器件的制造方法
CN112824039B (zh) * 2019-11-21 2023-02-17 Skc索密思株式会社 抛光垫及其制造方法和利用其的半导体器件的制造方法
TWI766447B (zh) * 2019-11-28 2022-06-01 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、其製備方法及使用其之半導體裝置的製備方法
CN115070608A (zh) * 2021-03-12 2022-09-20 Skc索密思株式会社 抛光垫、抛光垫的制备方法及半导体器件的制造方法
CN114536212A (zh) * 2022-01-29 2022-05-27 中山大学南昌研究院 一种微孔热塑性聚氨酯抛光垫及其半连续制备方法
CN114536212B (zh) * 2022-01-29 2024-02-09 浙江环龙新材料科技有限公司 一种微孔热塑性聚氨酯抛光垫及其半连续制备方法

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