TWI692772B - 時序電路 - Google Patents

時序電路 Download PDF

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Publication number
TWI692772B
TWI692772B TW105128179A TW105128179A TWI692772B TW I692772 B TWI692772 B TW I692772B TW 105128179 A TW105128179 A TW 105128179A TW 105128179 A TW105128179 A TW 105128179A TW I692772 B TWI692772 B TW I692772B
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TW
Taiwan
Prior art keywords
node
response
voltage
pmos transistor
nmos transistor
Prior art date
Application number
TW105128179A
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English (en)
Chinese (zh)
Other versions
TW201711027A (zh
Inventor
黃鉉澈
金珉修
Original Assignee
南韓商三星電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商三星電子股份有限公司 filed Critical 南韓商三星電子股份有限公司
Publication of TW201711027A publication Critical patent/TW201711027A/zh
Application granted granted Critical
Publication of TWI692772B publication Critical patent/TWI692772B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356121—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
TW105128179A 2015-09-07 2016-09-01 時序電路 TWI692772B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150126420A KR102353028B1 (ko) 2015-09-07 2015-09-07 시퀀셜 회로 및 그것의 동작 방법
KR10-2015-0126420 2015-09-07

Publications (2)

Publication Number Publication Date
TW201711027A TW201711027A (zh) 2017-03-16
TWI692772B true TWI692772B (zh) 2020-05-01

Family

ID=58055311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105128179A TWI692772B (zh) 2015-09-07 2016-09-01 時序電路

Country Status (5)

Country Link
US (1) US10038428B2 (ko)
KR (1) KR102353028B1 (ko)
CN (1) CN106505994B (ko)
DE (1) DE102016115935A1 (ko)
TW (1) TWI692772B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9941881B1 (en) * 2017-03-23 2018-04-10 Qualcomm Incorporated Apparatus and method for latching data including AND-NOR or OR-NAND gate and feedback paths
KR102369635B1 (ko) * 2017-09-06 2022-03-03 삼성전자주식회사 증가된 네거티브 셋업 시간을 갖는 시퀀셜 회로
CN112397131A (zh) * 2019-08-12 2021-02-23 长鑫存储技术有限公司 数据采样电路
CN110932713B (zh) * 2019-11-11 2023-05-16 东南大学 用于卷积神经网络硬件加速器的时序弹性电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923188A (en) * 1995-06-14 1999-07-13 Nec Corporation Clock signal distribution circuit of tree structure with minimized skew
TW505804B (en) * 1998-02-19 2002-10-11 Hitachi Ltd Liquid crystal display device
WO2004042787A2 (en) * 2002-10-30 2004-05-21 Syntest Technologies, Inc. Method and apparatus for testing asynchronous set/reset faults in a scan-based integrated circuit
US20080091995A1 (en) * 2006-09-25 2008-04-17 Dong Hyun Baik Progressive random access scan circuitry
US20130241617A1 (en) * 2012-03-16 2013-09-19 Min Su Kim Scan flip-flop, method thereof and devices having the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7157930B2 (en) 2003-12-22 2007-01-02 Matsushita Electric Industrial Co., Ltd. Scan flip flop, semiconductor device, and production method of semiconductor device
US6972605B1 (en) 2004-03-25 2005-12-06 Sun Microsystems, Inc. High speed semi-dynamic flip-flop circuit
KR101045295B1 (ko) 2004-04-29 2011-06-29 삼성전자주식회사 Ｍｔｃｍｏｓ 플립-플롭, 그를 포함하는 ｍｔｃｍｏｓ회로, 및 그 생성 방법
JP2007028532A (ja) 2005-07-21 2007-02-01 Matsushita Electric Ind Co Ltd フリップフロップ回路
CN100550639C (zh) * 2005-10-14 2009-10-14 威盛电子股份有限公司 多米诺输出锁存器
CN101091314B (zh) 2005-10-18 2010-05-19 松下电器产业株式会社 半导体集成电路
KR101573343B1 (ko) 2009-06-16 2015-12-02 삼성전자주식회사 플립플롭 회로 및 이를 구비하는 컴퓨터 시스템
US8593194B2 (en) 2010-11-30 2013-11-26 Marvell Israel (M.I.S.L) Ltd. Race free semi-dynamic D-type flip-flop
KR101736437B1 (ko) * 2010-12-02 2017-05-17 삼성전자주식회사 플립플롭 회로
US8508275B2 (en) 2011-10-11 2013-08-13 Oracle International Corporation Semi-dynamic flip-flop with partially floating evaluation window
US8975949B2 (en) * 2013-03-14 2015-03-10 Samsung Electronics Co., Ltd. Integrated clock gater (ICG) using clock cascode complimentary switch logic
TWI508450B (zh) 2013-04-10 2015-11-11 Mstar Semiconductor Inc 半動態正反器
EP3629476A1 (en) * 2013-05-08 2020-04-01 QUALCOMM Incorporated Flip-flop for reducing dynamic power

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923188A (en) * 1995-06-14 1999-07-13 Nec Corporation Clock signal distribution circuit of tree structure with minimized skew
TW505804B (en) * 1998-02-19 2002-10-11 Hitachi Ltd Liquid crystal display device
WO2004042787A2 (en) * 2002-10-30 2004-05-21 Syntest Technologies, Inc. Method and apparatus for testing asynchronous set/reset faults in a scan-based integrated circuit
US20080091995A1 (en) * 2006-09-25 2008-04-17 Dong Hyun Baik Progressive random access scan circuitry
US20130241617A1 (en) * 2012-03-16 2013-09-19 Min Su Kim Scan flip-flop, method thereof and devices having the same

Also Published As

Publication number Publication date
US20170070215A1 (en) 2017-03-09
TW201711027A (zh) 2017-03-16
KR20170029700A (ko) 2017-03-16
CN106505994B (zh) 2020-08-07
CN106505994A (zh) 2017-03-15
KR102353028B1 (ko) 2022-01-20
US10038428B2 (en) 2018-07-31
DE102016115935A1 (de) 2017-03-09

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