TWI692126B - 被覆有螢光體層之光半導體元件及其製造方法 - Google Patents

被覆有螢光體層之光半導體元件及其製造方法 Download PDF

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TWI692126B
TWI692126B TW104142411A TW104142411A TWI692126B TW I692126 B TWI692126 B TW I692126B TW 104142411 A TW104142411 A TW 104142411A TW 104142411 A TW104142411 A TW 104142411A TW I692126 B TWI692126 B TW I692126B
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Taiwan
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phosphor layer
transparent
phosphor
led
layer
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TW104142411A
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English (en)
Chinese (zh)
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TW201628219A (zh
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松田広和
常誠
吉田直子
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晶元光電股份有限公司
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  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW104142411A 2014-12-17 2015-12-16 被覆有螢光體層之光半導體元件及其製造方法 TWI692126B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014255110 2014-12-17
JP2014-255110 2014-12-17
JP2015217792A JP2016119454A (ja) 2014-12-17 2015-11-05 蛍光体層被覆光半導体素子およびその製造方法
JP2015-217792 2015-11-05

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TW201628219A TW201628219A (zh) 2016-08-01
TWI692126B true TWI692126B (zh) 2020-04-21

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TW104142411A TWI692126B (zh) 2014-12-17 2015-12-16 被覆有螢光體層之光半導體元件及其製造方法
TW104220246U TWM537717U (zh) 2014-12-17 2015-12-16 被覆有螢光體層之光半導體元件
TW109109349A TW202027302A (zh) 2014-12-17 2015-12-16 被覆有螢光體層之光半導體元件及其製造方法

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TW104220246U TWM537717U (zh) 2014-12-17 2015-12-16 被覆有螢光體層之光半導體元件
TW109109349A TW202027302A (zh) 2014-12-17 2015-12-16 被覆有螢光體層之光半導體元件及其製造方法

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JP (1) JP2016119454A (enExample)
CN (2) CN206003825U (enExample)
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6776859B2 (ja) 2016-12-09 2020-10-28 日本電気硝子株式会社 波長変換部材の製造方法、波長変換部材及び発光デバイス
TWI848915B (zh) * 2017-07-28 2024-07-21 日商杜邦東麗特殊材料股份有限公司 光學構件用樹脂薄片、具備其之光學構件、積層體或發光元件以及光學構件用樹脂薄片之製造方法
CN112563382A (zh) * 2019-09-25 2021-03-26 昆山科技大学 白光发光二极管结构及其制造方法
JP7239840B2 (ja) 2020-08-31 2023-03-15 日亜化学工業株式会社 発光装置の製造方法
KR102932774B1 (ko) * 2021-03-26 2026-03-03 닛산 가가쿠 가부시키가이샤 적층체, 적층체의 제조 방법, 및 반도체 기판의 제조 방법
TWI789740B (zh) * 2021-04-13 2023-01-11 光感動股份有限公司 發光二極體封裝結構及發光二極體封裝結構製造方法
JP2025034648A (ja) * 2023-08-31 2025-03-13 信越ポリマー株式会社 Ｍｉｐ素子の製造方法
CN122003974A (zh) * 2023-10-16 2026-05-08 信越聚合物株式会社 一体型密封片材和发光型电子部件
JPWO2025084096A1 (enExample) * 2023-10-16 2025-04-24

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110085352A1 (en) * 2008-05-30 2011-04-14 Shin Ito Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device
JP2013115088A (ja) * 2011-11-25 2013-06-10 Citizen Holdings Co Ltd 半導体発光装置
WO2014006539A1 (en) * 2012-07-05 2014-01-09 Koninklijke Philips N.V. Phosphor separated from led by transparent spacer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5104490B2 (ja) * 2007-04-16 2012-12-19 豊田合成株式会社 発光装置及びその製造方法
JP2010183035A (ja) * 2009-02-09 2010-08-19 Toyoda Gosei Co Ltd 発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110085352A1 (en) * 2008-05-30 2011-04-14 Shin Ito Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device
JP2013115088A (ja) * 2011-11-25 2013-06-10 Citizen Holdings Co Ltd 半導体発光装置
WO2014006539A1 (en) * 2012-07-05 2014-01-09 Koninklijke Philips N.V. Phosphor separated from led by transparent spacer

Also Published As

Publication number Publication date
TW201628219A (zh) 2016-08-01
CN205609569U (zh) 2016-09-28
CN206003825U (zh) 2017-03-08
JP2016119454A (ja) 2016-06-30
TWM537717U (zh) 2017-03-01
TW202027302A (zh) 2020-07-16

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