TWI689025B - Substrate processing device - Google Patents
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- TWI689025B TWI689025B TW105134908A TW105134908A TWI689025B TW I689025 B TWI689025 B TW I689025B TW 105134908 A TW105134908 A TW 105134908A TW 105134908 A TW105134908 A TW 105134908A TW I689025 B TWI689025 B TW I689025B
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
曝光裝置EX,係一邊將長條之基板P搬送於長邊方向,一邊於基板P上形成既定圖案,其具備:圓筒捲筒DR,支承基板P;作為第1支承構件之本體框架21及第1光學平台23,軸支圓筒捲筒DR;描繪裝置11,隔著基板P與旋轉捲筒DR對向配置,於基板P上形成圖案;作為第2支承構件之第2光學平台25,保持描繪裝置11;旋轉機構24,將第1光學平台23與第2光學平台25能旋轉地連結;標尺部GPa,GPb,用以測量圓筒捲筒DR之位置變化;以及編碼器讀頭EN1,EN2,檢測標尺部GPa,GPb之刻度。 The exposure device EX is to form a predetermined pattern on the substrate P while transporting the long substrate P in the longitudinal direction. It includes: a cylindrical reel DR, which supports the substrate P; a body frame 21 as a first support member and The first optical table 23 is a shaft-supporting cylindrical reel DR; the drawing device 11 is arranged to face the rotating reel DR via the substrate P, forming a pattern on the substrate P; the second optical table 25 as a second support member, Holding the drawing device 11; the rotation mechanism 24, which rotatably connects the first optical table 23 and the second optical table 25; the scale parts GPa, GPb, for measuring the positional change of the cylindrical reel DR; and the encoder read head EN1 , EN2, detect the scale of GPa and GPb in the scale part.
Description
本發明係關於基板處理裝置、基板處理裝置之調整方法、元件製造系統及元件製造方法。 The present invention relates to a substrate processing apparatus, an adjustment method of a substrate processing apparatus, a device manufacturing system, and a device manufacturing method.
以往,作為基板處理裝置,已知有一種近接方式之圖案曝光裝置,其具備搬送片狀工件(基板)之曝光滾筒、配置於曝光滾筒上部之光罩、以及將來自曝光光源之光以旋轉多面鏡加以掃描並照射於曝光用光罩之照明部(參照例如專利文獻1)。此圖案曝光裝置,係藉由以曝光滾筒一邊搬送片狀工件、一邊從照明部對光罩照射光,而於工件曝光光罩之光罩圖案。專利文獻1所記載之圖案曝光裝置,雖係將工件捲繞於曝光滾筒來搬送,但有可能因曝光滾筒之旋轉所致之振動等影響,使光罩與工件之配置關係變化。此情形下,捲繞於曝光滾筒之工件與光罩之配置關係,由於會從適於曝光之既定配置關係位移,因此光罩之光罩圖案難以精度良好地曝光至工件。
Conventionally, as a substrate processing apparatus, there is known a pattern exposure apparatus of a proximity type, which includes an exposure roller that conveys a sheet-like workpiece (substrate), a photomask disposed above the exposure roller, and rotates the light from the exposure light source in multiple planes The mirror scans and irradiates the illumination part of the exposure mask (see, for example, Patent Document 1). This pattern exposure apparatus exposes the mask pattern of the photomask to the work by irradiating light from the illumination portion to the photomask while conveying the sheet-like work with the exposure drum. Although the pattern exposure device described in
專利文獻1:日本特開2007-72171號公報 Patent Literature 1: Japanese Patent Laid-Open No. 2007-72171
依據本發明之第1態様,提供一種基板處理裝置,係將長條 之片狀基板搬送於長邊方向,且於該片狀基板上依序形成既定圖案,其具備:圓筒捲筒,具有從延伸於與前述長邊方向交叉之方向之中心線起一定半徑之圓筒狀外周面,以該外周面之一部分支承前述片狀基板;第1支承構件,將前述圓筒捲筒軸支成能繞前述中心線旋轉;圖案形成裝置,與前述圓筒捲筒之外周面中支承前述片狀基板之部分對向配置,於前述片狀基板上形成前述圖案;第2支承構件,保持前述圖案形成裝置;連結機構,將前述圓筒捲筒與前述圖案形成裝置之相對配置關係連結成能調整;基準構件,與前述圓筒捲筒一起繞前述中心線旋轉,設有用以測量前述圓筒捲筒之旋轉方向或前述中心線方向之位置變化的指標;以及第1檢測裝置,設於前述第2支承構件,檢測前述基準構件之指標以檢測前述圓筒捲筒之旋轉方向或前述中心線方向之位置變化。 According to the first aspect of the present invention, there is provided a substrate processing apparatus which is a long strip The sheet-like substrate is transported in the long-side direction, and a predetermined pattern is sequentially formed on the sheet-like substrate, which includes: a cylindrical reel having a certain radius from a center line extending in a direction crossing the aforementioned long-side direction A cylindrical outer peripheral surface that supports the sheet substrate with a portion of the outer peripheral surface; a first support member that supports the cylindrical spool shaft so as to be rotatable about the center line; a patterning device that is connected to the cylindrical spool The portion of the outer peripheral surface that supports the sheet-like substrate is arranged oppositely, and the pattern is formed on the sheet-like substrate; the second support member holds the pattern-forming device; a coupling mechanism that connects the cylindrical reel and the pattern-forming device The relative arrangement relationship is connected so as to be adjustable; the reference member, which rotates around the centerline together with the cylindrical reel, is provided with an indicator for measuring the positional change of the rotational direction of the cylindrical reel or the centerline direction; and the first The detection device is provided on the second support member and detects the index of the reference member to detect the positional change in the rotation direction of the cylindrical reel or the centerline direction.
依據本發明之第2態様,提供一種基板處理裝置之調整方法,該基板處理裝置具有以從中心線起一定半徑之圓筒狀外周面支承片狀基板且被第1支承構件支承成繞前述中心線旋轉的圓筒捲筒、以及於第2支承構件支承成在被前述圓筒捲筒支承之前述片狀基板形成既定圖案之圖案形成裝置,該調整方法包含:藉由配置於前述第2支承構件側之一對讀取頭讀取設在前述圓筒捲筒之前述中心線方向兩側之旋轉測量用編碼器之一對標尺部之各個的動作;從前述一對讀取頭之檢測結果求出前述圓筒捲筒與前述圖案形成裝置之從既定相對配置關係起之偏差的動作;以及以減少前述求出之偏差之方式,調整將前述第1支承構件與前述第2支承構件連結成能相對位移之連結機構的動作。 According to a second aspect of the present invention, there is provided an adjustment method of a substrate processing apparatus having a cylindrical outer peripheral surface having a certain radius from a center line and supporting a sheet substrate by a first support member so as to wrap around the center A cylindrical reel that rotates linearly, and a pattern forming device that supports the second support member to form a predetermined pattern on the sheet substrate supported by the cylindrical reel, the adjustment method includes: by disposing the second support The pair of reading heads on the component side reads the actions of each pair of scale parts of the rotary measuring encoders provided on both sides of the centerline direction of the cylindrical reel; the detection results from the pair of reading heads Determining the deviation between the cylindrical reel and the pattern forming device from a predetermined relative arrangement relationship; and adjusting the connection between the first support member and the second support member so as to reduce the deviation found The action of the link mechanism capable of relative displacement.
依據本發明之第3態様,提供一種基板處理裝置之調整方 法,該基板處理裝置具有以從中心線起一定半徑之圓筒狀外周面支承片狀基板且被第1支承構件支承成繞前述中心線旋轉的圓筒捲筒、以及於第2支承構件支承成在被前述圓筒捲筒支承之前述片狀基板形成既定圖案之圖案形成裝置,該調整方法包含:藉由配置於前述第2支承構件側之一對讀取頭讀取設在前述圓筒捲筒之前述中心線方向兩側之旋轉測量用編碼器之一對標尺部之各個的動作;從前述一對讀取頭之檢測結果,求出前述圓筒捲筒與前述圖案形成裝置之從既定相對配置關係起之偏差的動作;以及反映前述求出之偏差,相對前述圓筒捲筒調整前述圖案形成裝置於前述片狀基板上形成圖案之區域之空間上位置的動作。 According to the third aspect of the present invention, an adjustment method for a substrate processing apparatus is provided The substrate processing apparatus includes a cylindrical reel that supports a sheet substrate on a cylindrical outer peripheral surface having a certain radius from the center line and is supported by the first support member to rotate about the center line, and supported by the second support member A pattern forming device for forming a predetermined pattern on the sheet substrate supported by the cylindrical reel, the adjustment method includes: reading the set on the cylinder by a pair of reading heads arranged on the second support member side The movement of one of the encoders for rotation measurement on both sides of the centerline direction of the reel to each of the scale parts; from the detection results of the pair of reading heads, the relationship between the cylindrical reel and the patterning device is obtained The action of predetermining the deviation from the relative arrangement relationship; and the action of adjusting the spatial position of the pattern forming device in the area where the pattern is formed on the sheet substrate with respect to the cylindrical reel, reflecting the deviation obtained above.
依據本發明之第4態様,提供一種元件製造系統,其具備本發明第1態樣之基板處理裝置。 According to the fourth aspect of the present invention, there is provided a device manufacturing system including the substrate processing apparatus of the first aspect of the present invention.
依據本發明之第5態様,提供一種元件製造方法,其中,本發明第1態樣之圖案形成裝置,係對前述片狀基板照射與既定圖案之形狀對應之光能量的曝光裝置;且包含:將於表面形成有感光性功能層之前述片狀基板在以前述圓筒捲筒之一部分支承之狀態下搬送於前述長邊方向的動作;朝向前述片狀基板之以前述圓筒捲筒支承之部分照射來自前述曝光裝置之光能量的動作;以及藉由處理該照射之前述片狀基板,於前述片狀基板上形成與既定圖案之形狀對應之層的動作。 According to a fifth aspect of the present invention, there is provided a device manufacturing method, wherein the pattern forming device of the first aspect of the present invention is an exposure device that irradiates the sheet-like substrate with light energy corresponding to the shape of a predetermined pattern; and includes: The action of transporting the sheet-shaped substrate with the photosensitive functional layer formed on the surface in the longitudinal direction while being supported by a part of the cylindrical reel; towards the sheet-shaped substrate supported by the cylindrical reel The operation of partially irradiating the light energy from the exposure device; and the operation of forming a layer corresponding to the shape of a predetermined pattern on the sheet substrate by processing the irradiated sheet substrate.
依據本發明之第6態様,提供一種基板處理裝置,一邊將長條之片狀基板搬送於長邊方向,一邊於前述片狀基板上依序形成既定圖案,其具備:第1支承構件,係軸支圓筒捲筒,該圓筒捲筒,具有從延伸於與前述長邊方向交叉之方向之中心線起一定半徑之圓筒狀外周面,能一 邊以該外周面之一部分支承前述片狀基板一邊繞前述中心線旋轉;第2支承構件,將複數個圖案形成部於前述片狀基板之寬度方向排列保持,該圖案形成部,係為了於前述片狀基板上形成前述圖案而與前述圓筒捲筒之外周面中支承前述片狀基板之部分對向配置;第1旋轉機構,為了調整待形成於前述片狀基板上之前述圖案之傾斜而能調整前述第1支承構件與前述第2支承構件之相對角度關係;基準構件,與前述圓筒捲筒一起繞前述中心線旋轉,設有用以測量前述圓筒捲筒之旋轉方向或前述中心線方向之位置變化的指標;以及第1檢測裝置,設於前述第2支承構件側,檢測前述基準構件之指標以檢測前述圓筒捲筒之旋轉方向之位置變化,且檢測前述第1支承構件與前述第2支承構件之相對角度變化。 According to the sixth aspect of the present invention, there is provided a substrate processing apparatus which, while transporting a long sheet substrate in the longitudinal direction, forms a predetermined pattern on the sheet substrate in sequence, and includes: a first support member, which is The shaft-supported cylindrical reel has a cylindrical outer peripheral surface of a certain radius from the center line extending in the direction crossing the longitudinal direction, which can be Rotating around the center line while supporting the sheet substrate with a portion of the outer peripheral surface; the second support member holds a plurality of pattern forming portions aligned in the width direction of the sheet substrate, the pattern forming portion is for the purpose of The pattern is formed on the sheet substrate and is opposed to the portion of the outer surface of the cylindrical reel that supports the sheet substrate; the first rotating mechanism is to adjust the inclination of the pattern to be formed on the sheet substrate The relative angular relationship between the first support member and the second support member can be adjusted; the reference member rotates with the cylindrical reel around the center line, and is provided to measure the rotation direction of the cylindrical reel or the center line An index of position change in the direction; and a first detection device, which is provided on the side of the second support member, detects the index of the reference member to detect a position change in the rotation direction of the cylindrical reel, and detects the first support member and The relative angle of the aforementioned second support member changes.
1‧‧‧元件製造系統 1‧‧‧Component manufacturing system
11‧‧‧描繪裝置 11‧‧‧Drawing device
12‧‧‧基板搬送機構 12‧‧‧Substrate transfer mechanism
13‧‧‧裝置框架 13‧‧‧ Installation frame
14‧‧‧旋轉位置檢測機構 14‧‧‧ Rotation position detection mechanism
16‧‧‧控制裝置 16‧‧‧Control device
21‧‧‧本體框架 21‧‧‧Body frame
22‧‧‧三點座 22‧‧‧Three o'clock
23‧‧‧第1光學平台 23‧‧‧First optical platform
24‧‧‧旋轉機構 24‧‧‧rotating mechanism
25‧‧‧第2光學平台 25‧‧‧ 2nd optical platform
31‧‧‧校準檢測系 31‧‧‧ Calibration and Inspection Department
44、45‧‧‧XY二等分調整機構 44、45‧‧‧‧Bipartite adjustment mechanism
51‧‧‧1/2波長板 51‧‧‧1/2 wave plate
52‧‧‧偏光鏡 52‧‧‧ Polarizer
53‧‧‧散光器 53‧‧‧ Diffuser
60‧‧‧第1分束器 60‧‧‧First beam splitter
62‧‧‧第2分束器 62‧‧‧Second beam splitter
63‧‧‧第3分束器 63‧‧‧3rd beam splitter
73‧‧‧第4分束器 73‧‧‧ 4th beam splitter
81‧‧‧光偏向器 81‧‧‧Optical deflector
82‧‧‧1/4波長板 82‧‧‧1/4 wavelength plate
83‧‧‧掃描器 83‧‧‧ Scanner
84‧‧‧彎折鏡 84‧‧‧Bending mirror
85‧‧‧f-θ透鏡系 85‧‧‧f-θ lens system
86‧‧‧Y倍率修正用光學構件 86‧‧‧Y magnification correction optical component
92‧‧‧遮光板 92‧‧‧ Shading board
96‧‧‧反射鏡 96‧‧‧Reflecting mirror
97‧‧‧旋轉多面鏡 97‧‧‧rotating polygon mirror
98‧‧‧原點檢測器 98‧‧‧Origin detector
100‧‧‧編碼器讀頭EN1、EN2之安裝構件 100‧‧‧Encoder reading head EN1, EN2 installation components
101‧‧‧編碼器讀頭EN3、EN4之安裝構件 101‧‧‧Encoder reading head EN3, EN4 mounting components
105‧‧‧旋轉量測量裝置 105‧‧‧rotation amount measuring device
106‧‧‧旋轉機構之驅動部 106‧‧‧Drive unit of rotating mechanism
110‧‧‧三點座之驅動部 110‧‧‧Three-point drive unit
121‧‧‧X移動機構 121‧‧‧X mobile mechanism
122‧‧‧Z移動機構 122‧‧‧Z mobile mechanism
123‧‧‧軸承 123‧‧‧bearing
130‧‧‧捲筒支承框架 130‧‧‧Reel support frame
131‧‧‧捲筒旋轉機構 131‧‧‧ reel rotating mechanism
132‧‧‧捲筒支承構件 132‧‧‧Reel support member
141‧‧‧編碼器讀頭EN5、EN6之安裝構件 141‧‧‧Encoder reading head EN5, EN6 mounting components
P‧‧‧基板 P‧‧‧Substrate
U1,U2‧‧‧處理裝置 U1, U2‧‧‧ processing device
EX‧‧‧曝光裝置 EX‧‧‧Exposure device
AM1,AM2‧‧‧對準顯微鏡 AM1, AM2‧‧‧ alignment microscope
EVC‧‧‧調溫室 EVC‧‧‧adjust greenhouse
SU1,SU2‧‧‧防振單元 SU1,SU2‧‧‧‧Anti-vibration unit
E‧‧‧設置面 E‧‧‧Setting surface
EPC‧‧‧邊緣位置控制器 EPC‧‧‧Edge position controller
RT1,RT2‧‧‧張力調整滾筒 RT1, RT2 ‧‧‧ tension adjustment roller
DR‧‧‧旋轉捲筒 DR‧‧‧Rotating reel
AX2‧‧‧旋轉中心線 AX2‧‧‧Rotation centerline
Sf2‧‧‧軸部 Sf2‧‧‧Shaft
p3‧‧‧中心面 p3‧‧‧Center
DL‧‧‧鬆弛 DL‧‧‧slack
UW1~UW5‧‧‧描繪模組 UW1~UW5‧‧‧Drawing module
CNT‧‧‧光源裝置 CNT‧‧‧Light source device
LB‧‧‧描繪光束 LB‧‧‧Draw beam
I‧‧‧旋轉軸 I‧‧‧rotation axis
LL1~LL5‧‧‧描繪線 LL1~LL5‧‧‧Drawing line
PBS‧‧‧偏光分束器 PBS‧‧‧polarizing beam splitter
A7‧‧‧曝光領域 A7‧‧‧Exposure field
SL‧‧‧光束分配光學系 SL‧‧‧Beam Distribution Optical System
Le1~Le4‧‧‧設置方位線 Le1~Le4‧‧‧Set bearing line
Vw1~Vw6‧‧‧觀察區域 Vw1~Vw6 ‧‧‧ observation area
Ks1~Ks3‧‧‧對準標記 Ks1~Ks3‧‧‧Alignment mark
GPa,GPb‧‧‧標尺部 GPa, GPb‧‧‧ Ruler Department
EN1~EN6‧‧‧編碼器讀頭 EN1~EN6‧‧‧Encoder read head
SD‧‧‧標尺圓盤 SD‧‧‧Scale disc
圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。 FIG. 1 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
圖2係顯示圖1之曝光裝置主要部之配置的立體圖。 FIG. 2 is a perspective view showing the arrangement of main parts of the exposure apparatus of FIG. 1.
圖3係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。 FIG. 3 is a diagram showing the arrangement relationship between the alignment microscope and the drawing line on the substrate.
圖4係顯示圖1之曝光裝置之旋轉捲筒及描繪裝置之構成的圖。 FIG. 4 is a diagram showing the structure of a rotating reel and a drawing device of the exposure device of FIG. 1.
圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。 FIG. 5 is a plan view showing the arrangement of main parts of the exposure apparatus of FIG. 1.
圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。 6 is a perspective view showing the configuration of the divergent optical system of the exposure apparatus of FIG. 1.
圖7係顯示圖1之曝光裝置之複數個掃描器之配置關係的圖。 7 is a diagram showing the arrangement relationship of a plurality of scanners of the exposure apparatus of FIG. 1.
圖8係顯示在基板上之對準顯微鏡與描繪線與編碼器讀頭之配置關係的立體圖。 FIG. 8 is a perspective view showing the arrangement relationship between the alignment microscope on the substrate and the drawing line and the encoder read head.
圖9係顯示圖1之曝光裝置之旋轉捲筒之表面構造的立體圖。 9 is a perspective view showing the surface structure of the rotating drum of the exposure apparatus of FIG. 1.
圖10係顯示圖1之曝光裝置之編碼器讀頭之配置之俯視圖。 10 is a plan view showing the configuration of the encoder read head of the exposure apparatus of FIG.
圖11係顯示圖1之曝光裝置之旋轉捲筒與描繪裝置之配置關係的俯視圖。 11 is a plan view showing the arrangement relationship between the rotating reel and the drawing device of the exposure device of FIG. 1.
圖12係顯示與第1實施形態之曝光裝置調整方法相關之流程圖。 FIG. 12 is a flow chart related to the exposure device adjustment method of the first embodiment.
圖13係顯示第2實施形態之曝光裝置之主要部之配置的立體圖。 13 is a perspective view showing the arrangement of main parts of the exposure apparatus according to the second embodiment.
圖14係顯示第3實施形態之曝光裝置之主要部之配置的立體圖。 14 is a perspective view showing the arrangement of main parts of an exposure apparatus according to a third embodiment.
圖15係顯示第4實施形態之旋轉捲筒及描繪裝置之構成的圖。 Fig. 15 is a diagram showing the configuration of a spinning reel and a drawing device according to the fourth embodiment.
圖16係顯示第5實施形態之曝光裝置之編碼器讀頭之配置的俯視圖。 16 is a plan view showing the arrangement of the encoder read head of the exposure apparatus of the fifth embodiment.
圖17係顯示第6實施形態之曝光裝置之標尺圓盤之配置的俯視圖。 Fig. 17 is a plan view showing the arrangement of the scale disc of the exposure apparatus of the sixth embodiment.
圖18係顯示第1~第5實施形態之元件製造方法之流程圖。 FIG. 18 is a flowchart showing the device manufacturing method of the first to fifth embodiments.
針對用以實施本發明之形態(實施形態),一邊參照圖面一邊詳細說明。本發明當然不受限於以下實施形態記載之內容。又,以下記載之構成要素中,包含發明所屬技術領域中具有通常知識者容易想定者、以及實質相同之物。此外,以下記載之構成要素可適當組合。又,在不脫離本發明要旨範圍內,可進行構成要素之各種省略、置換或變更。 The form (embodiment) for implementing the present invention will be described in detail with reference to the drawings. Of course, the present invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include those that are easily conceivable by those with ordinary knowledge in the technical field to which the invention belongs and those that are substantially the same. In addition, the constituent elements described below can be combined as appropriate. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the scope of the present invention.
〔第1實施形態〕 [First Embodiment]
圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。第1實施形態之基板處理裝置係對基板P施以曝光處理的曝光裝置EX,曝光裝置EX組裝在對曝光後基板P施以各種處理以製造元件之元件製造系統1中。首先,說明元件製造系統1。
FIG. 1 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. The substrate processing apparatus of the first embodiment is an exposure apparatus EX that performs exposure processing on a substrate P, and the exposure apparatus EX is incorporated in a
<元件製造系統> <Component Manufacturing System>
元件製造系統1,係製造作為元件之可撓性顯示器的生產線(可撓性顯示器製造線)。可撓性顯示器,例如有機EL顯示器等。此元件製造系統1,係從將可撓性(flexible)基板P捲成筒狀之未圖示之供應用捲筒送出該基板P,在對送出之基板P連續的施以各種處理後,將處理後之基板P作為可撓性元件捲繞於未圖示之回收用捲筒之所謂的捲對捲(Roll to Roll)方式。於第1實施形態之元件製造系統1,係將薄膜狀之片狀基板P從供應用捲筒送出,從供應用捲筒送出之基板P依序經處理裝置U1、曝光裝置EX、處理裝置U2後,捲繞於回收用捲筒之例。此處,說明元件製造系統1之處理對象的基板P。
The
基板P,係由例如樹脂薄膜、不鏽鋼等之金屬或合金構成之箔(foil)等。樹脂薄膜之材質,可使用包含例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、聚乙烯醇樹脂等材料中之一種或二種以上者。 The substrate P is a foil made of a metal or alloy such as a resin film or stainless steel. The material of the resin film may include, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate One or more of ester resin, polystyrene resin, polyvinyl alcohol resin and other materials.
基板P,以選擇例如熱膨脹係數顯著不大、可實質忽視在對基板P實施之各種處理中因受熱而產生之變形量者較佳。熱膨脹係數,可藉由例如將無機填充物混合於樹脂薄膜據以設定為較對應處理溫度等之閾值小。無機填充物,可以是例如氧化鈦、氧化鋅、氧化鋁、氧化矽等。又,基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、或箔等的積層體。 For the substrate P, for example, it is preferable to select, for example, a coefficient of thermal expansion that is not significantly large, and the amount of deformation caused by heat in various treatments performed on the substrate P can be substantially ignored. The thermal expansion coefficient can be set to be lower than the threshold value corresponding to the processing temperature by, for example, mixing an inorganic filler in the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. In addition, the substrate P may be a single layer body of extremely thin glass having a thickness of about 100 μm manufactured by a float method or the like, or a laminate in which the above-mentioned resin film, foil, or the like is bonded to the extremely thin glass.
以此方式構成之基板P,被捲繞成捲筒狀而成為供應用捲
筒,此供應用捲筒被裝著於元件製造系統1。裝有供應用捲筒之元件製造系統1,對從供應用捲筒往長條方向送出之基板P反覆實行用以製造元件之各種處理。因此,處理後之基板P,成為複數個元件相連之狀態。也就是說,從供應用捲筒送出之基板P,為多面用之基板。此外,基板P亦可以是預先藉由既定前處理,將其表面予以改質而活性化者、或於表面形成用以精密圖案化之微細間隔壁構造(凹凸構造)者。
The substrate P constructed in this way is wound into a roll shape and becomes a supply roll
The supply reel is mounted on the
經處理後之基板P,被捲繞成捲筒狀作為回收用捲筒加以回收。回收用捲筒,被安裝於未圖示之切割裝置。裝有回收用捲筒之切割裝置,將處理後之基板P分割(切割)成各個元件,據以成為複數個元件。基板P之尺寸,例如,寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸為10m以上。此外,基板P之尺寸不限定於上述尺寸。 The processed substrate P is wound into a roll and collected as a roll for collection. The reel for recovery is installed on a cutting device (not shown). A cutting device equipped with a reel for recycling divides (cuts) the processed substrate P into individual components, thereby forming a plurality of components. The size of the substrate P is, for example, the size in the width direction (the direction of the short side) is about 10 cm to 2 m, and the size in the length direction (the direction of the long direction) is 10 m or more. In addition, the size of the substrate P is not limited to the above-mentioned size.
接著,參照圖1說明元件製造系統1。元件製造系統1具備處理裝置U1、曝光裝置EX、以及處理裝置U2。又,圖1,係X方向、Y方向及Z方向成正交之正交座標系。X方向,係於水平面內從處理裝置U1經曝光裝置EX朝向處理裝置U2之方向。Y方向,係於水平面內與X方向正交之方向,為基板P之寬度方向。Z方向,係與X方向及Y方向正交之方向(鉛直方向)。
Next, the
處理裝置U1,係對於曝光裝置EX進行曝光處理之基板P進行前製程之處理(前處理)。處理裝置U1,將已進行前處理之基板P送向曝光裝置EX。此時,被送至曝光裝置EX之基板P,係其表面形成有感光性機能層(光感應層)之基板(感光基板)P。 The processing device U1 performs a pre-process (pre-processing) process on the substrate P that is exposed by the exposure device EX. The processing device U1 sends the pre-processed substrate P to the exposure device EX. At this time, the substrate P sent to the exposure device EX is a substrate (photosensitive substrate) P having a photosensitive functional layer (photosensitive layer) formed on its surface.
此處,感光性機能層係作為溶液塗於基板P上,經乾燥而成為層(膜)。典型的感光性機能層有光阻劑,但作為顯影處理後無需之材料,有在受紫外線照射之部分之親撥液性經改質之感光性矽烷耦合劑材(SAM)、或受紫外線照射之部分露出鍍敷還元基之感光性還元材等。作為感光性機能層使用感光性矽烷耦合劑材時,由於基板P上被紫外線曝光之圖案部分由撥液性改質為親液性,因此於成為親液性之部分上選擇性塗布導電性墨水(含有銀或銅等導電性奈米粒子之墨水),以形成圖案層。作為感光性機能層使用感光性還元材時,由於會在基板P上被紫外線曝光之圖案部分露出鍍敷還元基,因此,曝光後,立即將基板P浸漬於含鈀離子等之無電鍍液中一定時間,以形成(析出)鈀之圖案層。 Here, the photosensitive functional layer is applied on the substrate P as a solution, and dried to form a layer (film). A typical photosensitive functional layer has a photoresist, but as a material that is not required after the development process, there is a liquid-modified photosensitive silane coupling agent material (SAM) in the portion exposed to ultraviolet rays, or exposed to ultraviolet rays The exposed part of the part is exposed to the photosensitive material of the base. When a photosensitive silane coupling agent material is used as the photosensitive functional layer, the pattern portion exposed to ultraviolet rays on the substrate P is changed from liquid-repellent to lyophilic, so conductive ink is selectively coated on the portion that becomes lyophilic (Ink containing conductive nano particles such as silver or copper) to form a pattern layer. When a photosensitive reduction material is used as the photosensitive functional layer, the pattern reduction portion exposed on the substrate P by the ultraviolet light exposes the plating reduction element. Therefore, immediately after exposure, the substrate P is immersed in an electroless plating solution containing palladium ions or the like A certain period of time to form (precipitate) a palladium pattern layer.
曝光裝置EX,對從處理裝置U1供應之基板P描繪例如顯示器用之電路或配線等之圖案。詳情留待後敘,此曝光裝置EX,係藉由將複數個描繪光束LB之各個掃描於既定掃描方向所得之複數個描繪線LL1~LL5對基板P進行曝光。 The exposure device EX draws a pattern such as a circuit or wiring for a display on the substrate P supplied from the processing device U1. The details will be described later. This exposure device EX exposes the substrate P by scanning a plurality of drawing lines LL1 to LL5 obtained by scanning each drawing beam LB in a predetermined scanning direction.
處理裝置U2,係對在曝光裝置EX進行曝光處理後之基板P進行後製程之處理(後處理)。在曝光裝置EX進行曝光處理後之基板P被送至處理裝置U2。處理裝置U2係藉由對已進行曝光處理之基板P施以既定處理,以於基板P上形成電子元件之圖案層。 The processing device U2 performs post-process processing (post-processing) on the substrate P after exposure processing by the exposure device EX. The substrate P after the exposure processing by the exposure device EX is sent to the processing device U2. The processing device U2 performs a predetermined process on the substrate P that has undergone the exposure process to form a pattern layer of electronic components on the substrate P.
<曝光裝置(基板處理裝置)> <Exposure device (substrate processing device)>
接著,參照圖1至圖9說明曝光裝置EX。圖2係顯示圖1之曝光裝置主要部之配置的立體圖。圖3係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。圖4係顯示圖1之曝光裝置之旋轉捲筒及描繪裝置之構成的 圖。圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。圖7係顯示圖1之曝光裝置之複數個掃描器之配置關係的圖。圖8係顯示在基板上之對準顯微鏡與描繪線與編碼器讀頭之配置關係的立體圖。圖9係顯示圖1之曝光裝置之旋轉捲筒表面構造的立體圖。 Next, the exposure device EX will be described with reference to FIGS. 1 to 9. FIG. 2 is a perspective view showing the arrangement of main parts of the exposure apparatus of FIG. 1. FIG. 3 is a diagram showing the arrangement relationship between the alignment microscope and the drawing line on the substrate. FIG. 4 shows the structure of the rotating reel and the drawing device of the exposure device of FIG. 1 Figure. FIG. 5 is a plan view showing the arrangement of main parts of the exposure apparatus of FIG. 1. 6 is a perspective view showing the configuration of the divergent optical system of the exposure apparatus of FIG. 1. 7 is a diagram showing the arrangement relationship of a plurality of scanners of the exposure apparatus of FIG. 1. FIG. 8 is a perspective view showing the arrangement relationship between the alignment microscope on the substrate and the drawing line and the encoder read head. 9 is a perspective view showing the surface structure of the rotating drum of the exposure apparatus of FIG. 1.
如圖1所示,曝光裝置EX,係不使用光罩之曝光裝置、所謂的無光罩方式的描繪曝光裝置,藉由將基板P一邊搬送方向搬送、一邊將描繪光束LB於既定掃描方向掃描,據以對基板P表面進行描繪,以於基板P上形成既定圖案。 As shown in FIG. 1, the exposure apparatus EX is an exposure apparatus that does not use a mask, a so-called maskless type exposure apparatus, and scans the drawing beam LB in a predetermined scanning direction by transporting the substrate P in the transport direction To draw the surface of the substrate P to form a predetermined pattern on the substrate P.
如圖1所示,曝光裝置EX具備描繪裝置11、基板搬送機構12、對準顯微鏡AM1、AM2、以及控制裝置16。描繪裝置11具有複數個描繪模組UW1~UW5,藉由複數個描繪模組UW1~UW5於被基板搬送機構12搬送之基板P之一部分描繪既定圖案。基板搬送機構12,將從前製程之處理裝置U1搬送而來之基板P,以既定速度往後製程之處理裝置U2搬送。對準顯微鏡AM1、AM2,為進行待描繪於基板P上之圖案與基板P之相對的位置對準(alignment),檢測預先形成在基板P之對準標記等。控制裝置16,控制曝光裝置EX之各部,使各部實施處理。控制裝置16可以是控制元件製造系統1之上位控制裝置之一部分或全部。又,控制裝置16亦可是受上位控制裝置控制之與上位控制裝置不同之裝置。控制裝置16,例如包含電腦。
As shown in FIG. 1, the exposure device EX includes a
又,曝光裝置EX具備支承描繪裝置11及基板搬送機構12之裝置框架13(參照圖2)、以及旋轉位置檢測機構(參照圖4及圖8)14。再者,
於曝光裝置EX內設有射出作為描繪光束LB之雷射光(脈衝光)的光源裝置CNT。此曝光裝置EX,將從光源裝置CNT射出之描繪光束LB在描繪裝置11內導引並投射於在基板搬送機構12被搬送之基板P。
In addition, the exposure apparatus EX includes a device frame 13 (refer to FIG. 2) that supports the
如圖1所示,曝光裝置EX係收納在調溫室EVC內。調溫室EVC,透過被動或主動的防振單元SU1、SU2設置在製造工廠之設置面E。防振單元SU1、SU2設在設置面E上,用以降低來自設置面E之振動。調溫室EVC,藉由將內部保持於既定溫度,據以抑制在內部搬送之基板P因溫度造成之形狀變化。 As shown in FIG. 1, the exposure device EX is housed in the greenhouse EVC. Adjust the greenhouse EVC through the passive or active anti-vibration units SU1, SU2 installed on the installation surface E of the manufacturing plant. Anti-vibration units SU1 and SU2 are provided on the installation surface E to reduce the vibration from the installation surface E. The greenhouse EVC is adjusted to keep the inside at a predetermined temperature, thereby suppressing the shape change of the substrate P transported inside due to temperature.
其次,參照圖1說明曝光裝置EX之基板搬送機構12。基板搬送機構12,從基板P之搬送方向上游側起依序具有邊緣位置控制器EPC、驅動滾筒DR4、張力調整滾筒RT1、旋轉捲筒(圓筒捲筒)DR、張力調整滾筒RT2、驅動滾筒DR6、及驅動滾筒DR7。
Next, the
邊緣位置控制器EPC係調整從處理裝置U1搬送之基板P於寬度方向之位置。邊緣位置控制器EPC,以從處理裝置U1送來之基板P之寬度方向端部(邊緣)位置,能相對目標位置在±十數μm~數十μm程度之範圍內,而使基板P於寬度方向移動,修正基板P於寬度方向之位置。 The edge position controller EPC adjusts the position of the substrate P transferred from the processing device U1 in the width direction. The edge position controller EPC can position the substrate P within the width of the end position (edge) of the substrate P sent from the processing device U1 in the range of ± tens μm to tens μm relative to the target position Move in the direction to correct the position of the substrate P in the width direction.
驅動滾筒DR4,一邊夾持從邊緣位置控制器EPC搬送而來之基板P之正反兩面一邊旋轉,將基板P送向搬送方向之下游側,以將基板P往旋轉捲筒DR搬送。旋轉捲筒DR,一邊將基板P上之圖案待曝光之部分支承成圓筒面狀、一邊以延伸於Y方向之旋轉中心線AX2為中心繞旋轉中心線X2旋轉,藉此搬送基板P。為使此種旋轉捲筒DR繞旋轉中心線AX2旋轉,於旋轉捲筒DR之兩側設有與旋轉中心線AX2同軸之軸(shaft) 部Sf2。此軸部Sf2,被賦予來自未圖示之驅動源(馬達或減速齒輪機構等)之旋轉力矩。此外,通過旋轉中心線AX2且延伸於Z方向之面為中心面p3。2組張力調整滾筒RT1、RT2,對被捲繞支承於旋轉捲筒DR之基板P賦予既定張力。2組驅動滾筒DR6、DR7於基板P之搬送方向相隔既定間隔配置,對曝光後之基板P賦予既定之鬆弛DL。藉由驅動滾筒DR6夾持搬送之基板P之上游側旋轉、驅動滾筒DR7夾持搬送之基板P之下游側旋轉,據以將基板P搬送向處理裝置U2。此時,基板P由於被賦予有鬆弛DL,因能吸收較驅動滾筒DR6在搬送方向下游側產生之基板P之搬送速度之變動,隔絕因搬送速度之變動對基板P造成之曝光處理之影響。 The driving drum DR4 rotates while sandwiching the front and back sides of the substrate P conveyed from the edge position controller EPC, and conveys the substrate P to the downstream side in the conveying direction to convey the substrate P to the rotating drum DR. The rotating reel DR rotates around the rotation center line X2 about the rotation center line AX2 extending in the Y direction while supporting the portion of the substrate P where the pattern to be exposed is cylindrical, and transports the substrate P. In order to rotate the rotating drum DR around the rotation center line AX2, shafts coaxial with the rotation center line AX2 are provided on both sides of the rotating drum DR 部Sf2. This shaft portion Sf2 is given a rotational torque from a drive source (motor, reduction gear mechanism, etc.) not shown. In addition, the surface that extends through the rotation center line AX2 and extends in the Z direction is the central surface p3. The two sets of tension-adjusting rollers RT1 and RT2 apply predetermined tension to the substrate P that is wound and supported on the rotating reel DR. The two sets of driving rollers DR6 and DR7 are arranged at a predetermined interval in the transport direction of the substrate P, and a predetermined slack DL is given to the substrate P after exposure. The substrate P is transferred to the processing device U2 by rotating the upstream side of the substrate P pinched by the driving roller DR6 and rotating the downstream side of the substrate P pinched by the driving roller DR7. At this time, since the substrate P is given a slack DL, it can absorb the change in the transfer speed of the substrate P that is generated downstream of the driving roller DR6 in the transfer direction, and isolates the influence of the exposure process caused by the change in the transfer speed on the substrate P.
從而,基板搬送機構12,能對從處理裝置U1搬送而來之基板P,藉由邊緣位置控制器EPC調整於寬度方向之位置。基板搬送機構12,將寬度方向之位置經調整之基板P,藉由驅動滾筒DR4搬送至張力調整滾筒RT1,將通過張力調整滾筒RT1之基板P搬送至旋轉捲筒DR。基板搬送機構12藉由使旋轉捲筒DR旋轉,據以將被支承於旋轉捲筒DR之基板P搬送向張力調整滾筒RT2。基板搬送機構12,將搬送至張力調整滾筒RT2之基板P搬送至驅動滾筒DR6,將搬送至驅動滾筒DR6之基板P搬送至驅動滾筒DR7。接著,基板搬送機構12藉由驅動滾筒DR6及驅動滾筒DR7,一邊對基板P賦予鬆弛DL、一邊將基板P搬送向處理裝置U2。
Therefore, the
其次參照圖2,說明曝光裝置EX之裝置框架13。圖2中,X方向、Y方向及Z方向為一正交之正交座標系,係與圖1相同之正交座標系。曝光裝置EX具備圖1所示之描繪裝置11與支承基板搬送機構12之旋轉捲筒DR之裝置框架13。
2, the
圖2所示之裝置框架13,從Z方向之下方側依序具有本體框架21、三點座(支承機構)22、第1光學平台23、旋轉機構24、以及第2光學平台25。本體框架21係透過防振單元SU1、SU2設置在設置面E上。本體框架21,將旋轉捲筒DR及張力調整滾筒RT1(未圖示)、RT2支承成可旋轉。第1光學平台23,設在旋轉捲筒DR之鉛直方向上方側,透過三點座22設置於本體框架21。三點座22,將第1光學平台23以3個支承點22a支承,於各支承點22a之Z方向位置可調整。因此,三點座22可將第1光學平台23之平台面相對水平面之傾斜調整成既定傾斜。此外,於裝置框架13之組裝時,本體框架21與三點座22之間,可在XY面內調整於X方向及Y方向之位置。另一方面,於裝置框架13之組裝後,本體框架21與三點座22之間則成為被固定之狀態(剛性狀態)。如上述,透過三點座22連結之本體框架21與第1光學平台23發揮第1支承構件功能。
The
第2光學平台25設在第1光學平台23之鉛直方向上方側,透過旋轉機構24設置於第1光學平台23。第2光學平台25,其平台面與第1光學平台23之平台面平行。於第2光學平台25,設有描繪裝置11之複數個描繪模組UW1~UW5。旋轉機構24,可在將第1光學平台23及第2光學平台25各個之平台面保持成大致平行之狀態下,以延伸於鉛直方向之既定旋轉軸I為中心,相對第1光學平台23使第2光學平台25旋轉。此旋轉軸I,於中心面p3內延伸於鉛直方向且通過捲繞在旋轉捲筒DR之基板P表面(順著圓周面彎曲之描繪面)內之既定點(參照圖3)。旋轉機構24,藉由相對第1光學平台23使第2光學平台25旋轉,即能調整複數個描繪模組UW1~UW5相對被捲繞於旋轉捲筒DR之基板P的位置。
The second optical table 25 is provided on the vertically upward side of the first optical table 23, and is provided on the first optical table 23 through the
其次,參照圖1、圖5說明光源裝置CNT。光源裝置CNT設置在裝置框架13之本體框架21上。光源裝置CNT,射出投射於基板p之作為描繪光束LB之雷射光。光源裝置CNT具有射出適於基板P上之感光性機能層之曝光之既定波長帶域的光且設定為光活性作用強之紫外區之光的光源。作為光源,可利用例如射出YAG之第三高次諧波雷射光(波長355nm)之雷射光源或藉由將來自半導體雷射光源之紅外波長區之種光以光纖放大器放大後藉由波長轉換元件(產生諧波之結晶元件等)而射出波長400nm以下之紫外波長區之雷射光的光纖放大雷射光源等。此情形下,被射出之紫外雷射光可為連續振盪,亦可為每一脈衝之發光時間為數十披秒以下且以100MHz以上之頻率振盪之脈衝雷射光。除此之外,作為光源,例如亦能利用具有紫外區之輝線(g線、h線、i線等)之水銀燈等燈光源、於波長450nm以下之紫外區具有振盪峰值之雷射二極體、發光二極體(LED)等固態光源、或產生振盪出遠紫外光(DUV光)之KrF準分子雷射光(波長248nm)、ArF準分子雷射光(波長193nm)、XeCl準分子雷射光(波長308nm)等之氣體雷射光源。
Next, the light source device CNT will be described with reference to FIGS. 1 and 5. The light source device CNT is provided on the
此處,從光源裝置CNT射出之描繪光束LB係射入後述之偏光分束器PBS。描繪光束LB為了抑制因在偏光分束器PBS對描繪光束LB之分離產生之能量損耗,較佳為被射入之描繪光束LB成為在偏光分束器PBS大致全反射的光束。偏光分束器PBS係反射成為S偏光之直線偏光之光束,使成為P偏光之直線偏光之光束透射。因此,光源裝置CNT,較佳為射入偏光分束器PBS之描繪光束LB會成為直線偏光(S偏光)之光束之雷射光。又,雷射光由於能量密度高,因此能適當地確保投射於基板P之 光束之照度。 Here, the drawing light beam LB emitted from the light source device CNT enters the polarization beam splitter PBS described later. In order to suppress the energy loss due to the separation of the drawing beam LB by the polarizing beam splitter PBS, the drawing beam LB is preferably a light beam that is incident almost completely reflected by the polarizing beam splitter PBS. The polarizing beam splitter PBS reflects linearly polarized light beams that become S polarized light, and transmits linearly polarized light beams that become P polarized light. Therefore, the light source device CNT, preferably, the drawing beam LB incident on the polarizing beam splitter PBS becomes laser light of a linearly polarized (S-polarized) beam. In addition, since the laser light has a high energy density, it is possible to appropriately ensure the projection of the light onto the substrate P Illumination of the light beam.
其次,針對曝光裝置EX之描繪裝置11說明。描繪裝置11係使用複數個描繪模組UW1~UW5之所謂的多光束型描繪裝置11。此描繪裝置11,將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數個描繪光束LB沿著基板P上之複數條(第1實施形態中例如為5條)描繪線LL1~LL5分別加以掃描。接著,描繪裝置11,將以複數條描繪線LL1~LL5之各個在基板P上描繪之圖案彼此於基板P之寬度方向加以接合。首先,參照圖3,說明以描繪裝置11掃描複數個描繪光束LB據以在基板P上形成之複數條描繪線LL1~LL5。
Next, the
如圖3所示,複數條描繪線LL1~LL5,夾著中心面p3於旋轉捲筒DR之周方向配置成2行。於旋轉方向上游側之基板P上,配置奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5。於旋轉方向下游側之基板P上,配置偶數號之第2描繪線LL2及第4描繪線LL4。 As shown in FIG. 3, a plurality of drawing lines LL1 to LL5 are arranged in two rows in the circumferential direction of the rotating reel DR with the center plane p3 in between. On the substrate P on the upstream side in the rotation direction, odd-numbered first drawing lines LL1, third drawing lines LL3, and fifth drawing lines LL5 are arranged. On the substrate P on the downstream side in the rotation direction, even-numbered second drawing lines LL2 and fourth drawing lines LL4 are arranged.
各描繪線LL1~LL5於基板P之寬度方向(Y方向)、也就是沿旋轉捲筒DR之旋轉中心線AX2形成,較基板P於寬度方向之長度短。嚴謹來說,各描繪線LL1~LL5,為在藉由基板搬送機構12以基準速度搬送基板P時,以複數條描繪線LL1~LL5所得之圖案之接合誤差為最小之方式,相對旋轉捲筒DR之旋轉中心線AX2傾斜既定角度量。
The drawing lines LL1 to LL5 are formed in the width direction (Y direction) of the substrate P, that is, along the rotation center line AX2 of the rotating drum DR, and are shorter than the length of the substrate P in the width direction. Strictly speaking, each of the drawing lines LL1 to LL5 is relative rotation of the reel in such a way that when the substrate P is transferred by the
奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5,於旋轉捲筒DR之旋轉中心線AX2延伸之方向(軸方向)相距既定間隔配置。又,偶數號之第2描繪線LL2及第4描繪線LL4,於旋轉捲筒DR之軸方向相距既定間隔配置。此時,第2描繪線LL2係於軸方向配置在第1 描繪線LL1與第3描繪線LL3之間。同樣的,第3描繪線LL3係於軸方向配置在第2描繪線LL2與第4描繪線LL4之間。第4描繪線LL4於軸方向配置在第3描繪線LL3與第5描繪線LL5之間。此外,第1~第5描繪線LL1~LL5係配置成涵蓋描繪於基板P上之曝光區域A7之寬度方向(軸方向)全寬。 The odd-numbered first drawing lines LL1, third drawing lines LL3, and fifth drawing lines LL5 are arranged at predetermined intervals in the direction (axis direction) in which the rotation center line AX2 of the rotating drum DR extends. In addition, even-numbered second drawing lines LL2 and fourth drawing lines LL4 are arranged at predetermined intervals in the axial direction of the rotating drum DR. At this time, the second drawing line LL2 is arranged at the first in the axial direction Between the drawing line LL1 and the third drawing line LL3. Similarly, the third drawing line LL3 is arranged between the second drawing line LL2 and the fourth drawing line LL4 in the axial direction. The fourth drawing line LL4 is arranged between the third drawing line LL3 and the fifth drawing line LL5 in the axial direction. In addition, the first to fifth drawing lines LL1 to LL5 are arranged so as to cover the entire width in the width direction (axial direction) of the exposure area A7 drawn on the substrate P.
沿著奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5掃描之描繪光束LB之掃描方向為一維方向、相同方向。又,沿偶數號之第2描繪線LL2及第4描繪線LL4掃描之描繪光束LB之掃描方向為一維方向、相同方向。此時,沿奇數號描繪線LL1、LL3、LL5掃描之描繪光束LB之掃描方向與沿偶數號描繪線LL2、LL4掃描之描繪光束LB之掃描方向為相反方向。因此,從基板P之搬送方向來看,奇數號描繪線LL1、LL3、LL5之描繪開始位置與偶數號描繪線LL2、LL4之描繪結束位置係相鄰接,同樣的,奇數號描繪線LL1、LL3、LL5之描繪結束位置與偶數號描繪線LL2、LL4之描繪開始位置係相鄰接。 The scanning direction of the drawing beam LB scanned along the odd-numbered first drawing line LL1, third drawing line LL3, and fifth drawing line LL5 is a one-dimensional direction and the same direction. In addition, the scanning direction of the drawing light beam LB scanned along the even-numbered second drawing line LL2 and the fourth drawing line LL4 is a one-dimensional direction and the same direction. At this time, the scanning direction of the drawing beam LB scanned along the odd-numbered drawing lines LL1, LL3, LL5 and the scanning direction of the drawing beam LB scanned along the even-numbered drawing lines LL2, LL4 are opposite directions. Therefore, in view of the transport direction of the substrate P, the drawing start positions of the odd-numbered drawing lines LL1, LL3, and LL5 are adjacent to the drawing end positions of the even-numbered drawing lines LL2, LL4. Similarly, the odd-numbered drawing lines LL1 The drawing end positions of LL3 and LL5 are adjacent to the drawing start positions of even-numbered drawing lines LL2 and LL4.
其次,參照圖4至圖7說明描繪裝置11。描繪裝置11,具有上述複數個描繪模組UW1~UW5、將來自光源裝置CNT之描繪光束LB分歧而導至複數個描繪模組UW1~UW5之光束分配光學系SL、以及用以進行校準之校準檢測系31。
Next, the
光束分配光學系SL將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數條描繪光束LB分別導向複數個描繪模組UW1~UW5。光束分配光學系SL,具有將從光源裝置CNT射出之描繪光束LB分歧為2條之第1光學系41、以第1光學系41分歧之一描繪光束LB所
照射之第2光學系42、及以第1光學系41分歧之另一描繪光束LB所照射之第3光學系43。又,光束分配光學系SL,包含XY二等分(halving)調整機構44、以及XY二等分調整機構45。光束分配光學系SL,其光源裝置CNT側之一部分設置於本體框架21,另一方面,描繪模組UW1~UW5側之另一部分則設置於第2光學平台25。
The beam distributing optical system SL diverges the drawing light beam LB emitted from the light source device CNT into a plurality of plural pieces, and directs the divided plural drawing light beams LB to the plural drawing modules UW1 to UW5, respectively. The beam distributing optical system SL includes a first
第1光學系41,具有1/2波長板51、偏光鏡52、散光器(beam diffuser)53、第1反射鏡54、第1中繼透鏡55、第2中繼透鏡56、第2反射鏡57、第3反射鏡58、第4反射鏡59、以及第1分束器60。
The first
從光源裝置CNT往+X方向射出之描繪光束LB照射於1/2波長板51。1/2波長板51在描繪光束LB之照射面內可旋轉。照射於1/2波長板51之描繪光束LB,其偏光方向為對應1/2波長板51之旋轉量的既定偏光方向。通過1/2波長板51之描繪光束LB照射於偏光鏡(偏光分束器)52。偏光鏡52使成為既定偏光方向之描繪光束LB穿透,另一方面將既定偏光方向以外之描繪光束LB反射向+Y方向。因此,以偏光鏡52反射之描繪光束LB,由於通過1/2波長板51,因此可藉由1/2波長板51及偏光鏡52之協同動作,而成為與1/2波長板51之旋轉量對應之光束強度。也就是說,使1/2波長板51旋轉,以使描繪光束LB之偏光方向變化,藉此能調整在偏光鏡52反射之描繪光束LB之光束強度。
The drawing light beam LB emitted from the light source device CNT in the +X direction is irradiated on the half-
穿透過偏光鏡52之描繪光束LB照射於散光器53。散光器53吸收描繪光束LB,抑制照射於散光器53之描繪光束LB往外部之洩漏。被偏光鏡52反射向+Y方向之描繪光束LB照射於第1反射鏡54。照射於第1反射鏡54之描繪光束LB,被第1反射鏡54反射向+X方向,經由第1
中繼透鏡55及第2中繼透鏡56照射於第2反射鏡57。照射於第2反射鏡57之描繪光束LB,被第2反射鏡57反射向-Y方向而照射於第3反射鏡58。照射於第3反射鏡58之描繪光束LB,被第3反射鏡58反射向-Z方向而照射於第4反射鏡59。照射於第4反射鏡59之描繪光束LB,被第4反射鏡59反射向+Y方向而照射於第1分束器60。照射於第1分束器60之描繪光束LB,其一部分被反射往-X方向而照射於第2光學系42,其另一部分透射而照射於第3光學系43。
The drawing beam LB passing through the
第3反射鏡58與第4反射鏡59係在旋轉機構24之旋轉軸I上相距既定間隔設置。又,至包含第3反射鏡58之光源裝置CNT為止之構成(在圖4之Z方向上方側,以二點鍊線圍繞之部分)係設於本體框架21側,至包含第4反射鏡59之複數個描繪模組UW1~UW5為止之構成(在圖4之Z方向下方側,以二點鍊線圍繞之部分)係設於第2光學平台25側。因此,即使以旋轉機構24使第2光學平台25相對第1光學平台23旋轉,由於在旋轉軸I上設有第3反射鏡58與第4反射鏡59,因此描繪光束LB之光路不會變更。從而,即使以旋轉機構24使第2光學平台25相對第1光學平台23旋轉,亦能將從設置在本體框架21側之光源裝置CNT射出之描繪光束LB,非常合適地引導向設置在第2光學平台25側之複數個描繪模組UW1~UW5。
The
第2光學系42,將於第1光學系41分歧之一方之描繪光束LB,分歧導向後述之奇數號描繪模組UW1、UW3、UW5。第2光學系42,具有第5反射鏡61、第2分束器62、第3分束器63、以及第6反射鏡64。
The second
於第1光學系41之第1分束器60被反射向-X方向之描繪
光束LB,照射於第5反射鏡61。照射於第5反射鏡61之描繪光束LB,被第5反射鏡61反射向-Y方向,而照射於第2分束器62。照射於第2分束鏡62之描繪光束LB,其一部分被反射而照射於奇數號之1個描繪模組UW5(參照圖5)。照射於第2分束器62之描繪光束LB,其他一部分穿透而照射於第3分束器63。照射於第3分束器63之描繪光束LB,其一部分被反射而照射於奇數號之1個描繪模組UW3(參照圖5)。照射於第3分束器63之描繪光束LB,其他一部分穿透而照射於第6反射鏡64。照射於第6反射鏡64之描繪光束LB被第6反射鏡64反射而照射於奇數號之1個描繪模組UW1(參照圖5)。此外,於第2光學系42,照射於奇數號描繪模組UW1、UW3、UW5之描繪光束LB,相對-Z方向(Z軸)略微傾斜。
The
第3光學系43將於第1光學系41分歧之另一方之描繪光束LB,分歧導向後述之偶數號描繪模組UW2、UW4。第3光學系43,具有第7反射鏡71、第8反射鏡72、第4分束器73、以及第9反射鏡74。
The third
於第1光學系41之第1分束器60往Y方向穿透之描繪光束LB,照射於第7反射鏡71。照射於第7反射鏡71之描繪光束LB,被第7反射鏡71反射向X方向,照射於第8反射鏡72。照射於第8反射鏡72之描繪光束LB,被第8反射鏡72反射向-Y方向,照射於第4分束器73。照射於第4分束器73之描繪光束LB,其一部分被反射而照射於偶數號之1個描繪模組UW4(參照圖5)。照射於第4分束器73之描繪光束LB,其他一部分穿透而照射於第9反射鏡74。照射於第9反射鏡74之描繪光束LB,被第9反射鏡74反射而照射於偶數號之1個描繪模組UW2。此外,於第3光學系43,照射於偶數號描繪模組UW2、UW4之描繪光束LB,亦係相對
-Z方向(Z軸)略微傾斜。
The drawing beam LB penetrating in the Y direction by the
如以上所述,於光束分配光學系SL,朝向複數個描繪模組UW1~UW5,將來自光源裝置CNT之描繪光束LB分歧為複數條。此時,第1分束器60、第2分束器62、第3分束器63及第4分束器73,其反射率(穿透率)係視描繪光束LB之分歧數調整為適當的反射率,以使照射於複數個描繪模組UW1~UW5之描繪光束LB之光束強度為相同強度。
As described above, in the beam distributing optical system SL, toward the plurality of drawing modules UW1 to UW5, the drawing light beam LB from the light source device CNT is divided into a plurality of pieces. At this time, the reflectance (transmittance) of the
XY二等分調整機構44,配置在第2中繼透鏡56與第2反射鏡57之間。XY二等分調整機構44可將形成於基板P上之描繪線LL1~LL5全部在基板P之描繪面內微幅移動地調整。XY二等分調整機構44係以能在圖6之XZ面內傾斜之透明平行平板玻璃與能在圖6之YZ面內傾斜之透明平行平板玻璃構成。藉由調整該兩片平行平板玻璃之各傾斜量,而能使形成於基板P上之描繪線LL1~LL5在X方向或Z方向微幅位移。
The XY
XY二等分調整機構45,配置在第7反射鏡71與第8反射鏡72之間。XY二等分調整機構45可將形成於基板P上之描繪線LL1~LL5中之偶數號之第2描繪線LL2及第4描繪線LL4在基板P之描繪面內微幅移動地調整。XY二等分調整機構45係與XY二等分調整機構44同樣地,以能在圖6之XZ面內傾斜之透明平行平板玻璃與能在圖6之YZ面內傾斜之透明平行平板玻璃構成。藉由調整該兩片平行平板玻璃之各傾斜量,而能使形成於基板P上之描繪線LL2、LL4在X方向或Z方向微幅位移。
The XY
接著,參照圖4、圖5及圖7,說明複數個描繪模組UW1~UW5。複數個描繪模組UW1~UW5係對應複數條描繪線LL1~LL5設置。藉由光束分配光學系SL而分歧之複數條描繪光束LB分別照射於複數個描 繪模組UW1~UW5。各描繪模組UW1~UW5,係使複數條描繪光束LB分別導至各描繪線LL1~LL5。亦即,第1描繪模組UW1係將描繪光束LB導至第1描繪線LL1,同樣地,第2~5描繪模組UW2~UW5係將描繪光束LB導至第2~第5描繪線LL2~LL5。如圖4(及圖1)所示,複數個描繪模組UW1~UW5係夾著中心面p3於旋轉捲筒DR之周方向配置成2行。複數個描繪模組UW1~UW5,於夾著中心面p3配置第1、第3、第5描繪線LL1、LL3、LL5之側(圖5之-X方向側),配置第1描繪模組UW1、第3描繪模組UW3及第5描繪模組UW5。第1描繪模組UW1、第3描繪模組UW3及第5描繪模組UW5,於Y方向相距既定間隔配置。又,複數個描繪模組UW1~UW5,於夾著中心面p3配置第2、第4描繪線LL2、LL4之側(圖5之+X方向側),配置第2描繪模組UW2及第4描繪模組UW4。第2描繪模組UW2及第4描繪模組UW4於Y方向相隔既定間隔配置。此時,第2描繪模組UW2,於Y方向係配置在第1描繪模組UW1與第3描繪模組UW3之間。同樣的,第3描繪模組UW3,於Y方向係配置在第2描繪模組UW2與第4描繪模組UW4之間。第4描繪模組UW4,於Y方向配置在第3描繪模組UW3與第5描繪模組UW5之間。又,如圖4所示,第1描繪模組UW1、第3描繪模組UW3及第5描繪模組UW5與第2描繪模組UW2及第4描繪模組UW4,從Y方向看,係以中心面p3為中心對稱配置。 Next, referring to FIGS. 4, 5 and 7, a plurality of drawing modules UW1 to UW5 will be described. Plural drawing modules UW1~UW5 are set corresponding to plural drawing lines LL1~LL5. The plural drawing beams LB diverged by the beam distributing optical system SL are respectively irradiated to the plural drawing beams Paint module UW1~UW5. Each drawing module UW1~UW5 causes a plurality of drawing beams LB to be directed to each drawing line LL1~LL5, respectively. That is, the first drawing module UW1 guides the drawing beam LB to the first drawing line LL1, and similarly, the second to fifth drawing modules UW2 to UW5 guide the drawing beam LB to the second to fifth drawing line LL2 ~LL5. As shown in FIG. 4 (and FIG. 1), a plurality of drawing modules UW1 to UW5 are arranged in two rows in the circumferential direction of the rotating drum DR with the center plane p3 in between. A plurality of drawing modules UW1 to UW5 are arranged on the side sandwiching the center plane p3 between the first, third, and fifth drawing lines LL1, LL3, and LL5 (the side in the -X direction in FIG. 5), and the first drawing module UW1 is arranged , The third drawing module UW3 and the fifth drawing module UW5. The first drawing module UW1, the third drawing module UW3, and the fifth drawing module UW5 are arranged at a predetermined interval in the Y direction. In addition, a plurality of drawing modules UW1 to UW5 are arranged on the side sandwiching the center plane p3 between the second and fourth drawing lines LL2 and LL4 (the side in the +X direction in FIG. 5), and the second drawing modules UW2 and the fourth Describe the module UW4. The second drawing module UW2 and the fourth drawing module UW4 are arranged at a predetermined interval in the Y direction. At this time, the second drawing module UW2 is arranged between the first drawing module UW1 and the third drawing module UW3 in the Y direction. Similarly, the third drawing module UW3 is arranged between the second drawing module UW2 and the fourth drawing module UW4 in the Y direction. The fourth drawing module UW4 is arranged between the third drawing module UW3 and the fifth drawing module UW5 in the Y direction. Furthermore, as shown in FIG. 4, the first drawing module UW1, the third drawing module UW3, and the fifth drawing module UW5 and the second drawing module UW2 and the fourth drawing module UW4, viewed from the Y direction, are The center plane p3 is symmetrically arranged in the center.
其次,參照圖4說明各描繪模組UW1~UW5。又,由於各描繪模組UW1~UW5為相同構成,因此以第1描繪模組UW1(以下,僅稱描繪模組UW1)為例加以說明。 Next, each drawing module UW1 to UW5 will be described with reference to FIG. 4. In addition, since the drawing modules UW1 to UW5 have the same structure, the first drawing module UW1 (hereinafter, simply referred to as the drawing module UW1) will be described as an example.
圖4所示之描繪模組UW1,為沿描繪線LL1(第1描繪線
LL1)掃描描繪光束LB,而具備光偏向器81、偏光分束器PBS、1/4波長板82、掃描器83、彎折鏡84、遠心之f-θ透鏡系85、以及Y倍率修正用光學構件86。又,與偏向分束器PBS相鄰設有校準檢測系31。
The drawing module UW1 shown in FIG. 4 is along the drawing line LL1 (the first drawing line
LL1) Scanning and drawing light beam LB, equipped with
光偏向器81,係使用例如聲光調變元件(AOM:AcoustIic Optic Modulator)。光偏向器81,藉由控制裝置16而被切換成ON/OFF,以高速地切換描繪光束LB對基板P之投射/非投射。具體而言,來自光束分配光學系SL之描繪光束LB,透過第2光學系42之中繼透鏡91相對-Z方向略微傾斜的照射於光偏向器81。在光偏向器81被切換至OFF時,描繪光束LB即以傾斜狀態直進,而被設在通過光偏向器81之後之遮光板92遮光。另一方面,在光偏向器81被切換至ON時,射入光偏向器81之描繪光束LB成為一次繞射光束而往-Z方向偏向,從光偏向器81射出而射入設在光偏向器81之Z方向上的偏光分束器PBS。因此,在光偏向器81被切換至ON時,係將描繪光束LB投射於基板P,在被切換至OFF時,使描繪光束LB對基板P成為非投射狀態。
The
偏光分束器PBS反射從光偏向器81透過中繼透鏡93照射之描繪光束LB。另一方面,偏光分束器PBS與設在偏光分束器PBS與掃描器83之間之1/4波長板82協同動作,穿透藉由描繪光束LB(點光)之照射在基板P(或旋轉捲筒DR之外周面)產生之反射光。也就是說,從光偏向器81照射於偏光分束器PBS之描繪光束LB係S偏光之直線偏光的雷射光,被偏光分束器PBS反射。又,被偏光分束器PBS反射之描繪光束LB,通過1/4波長板82而照射於基板P,並從基板P再度通過1/4波長板82,藉此成為P偏光之直線偏光的雷射光。因此,從基板P(或旋轉捲筒DR之外
周面)產生並照射於偏光分束器PBS之反射光穿透偏光分束器PBS。此外,穿透偏光分束器PBS之反射光,透過中繼透鏡94照射於校準檢測系31。另一方面,在偏光分束器PBS反射之描繪光束LB,通過1/4波長板82而射入掃描器83。
The polarizing beam splitter PBS reflects the drawing light beam LB irradiated from the
如圖4及圖7所示,掃描器83具有反射鏡96、旋轉多面鏡97、與原點檢測器98。通過1/4波長板82之描繪光束LB,透過中繼透鏡95照射於反射鏡96。在反射鏡96反射之描繪光束LB照射於旋轉多面鏡97。旋轉多面鏡97包含延伸於Z方向之旋轉軸97a、與形成在旋轉軸97a周圍之複數個反射面(例如八面)97b而構成。旋轉多面鏡97,藉由以旋轉軸97a為中心往既定旋轉方向旋轉,據以使照射於反射面97b之描繪光束LB之反射角連續變化,藉此,使反射之描繪光束LB沿基板P上之描繪線LL1掃描。在旋轉多面鏡97反射之描繪光束LB照射於彎折鏡84。原點檢測器98係檢測沿基板P之描繪線LL1掃描之描繪光束LB之原點。原點檢測器98,隔著於各反射面97b反射之描繪光束LB,配置在反射鏡96之相反側。因此,原點檢測器98檢測出照射於f-θ透鏡系85前之描繪光束LB。也就是說,原點檢測器98,係在照射於基板P上之描繪線LL1之描繪開始位置前一刻之時點檢測出描繪光束LB之通過。
As shown in FIGS. 4 and 7, the
從掃描器83照射於彎折鏡84之描繪光束LB被彎折鏡84反射而照射於f-θ透鏡系85。f-θ透鏡系85包含遠心f-θ透鏡,使透過彎折鏡84而從旋轉多面鏡97反射之描繪光束LB垂直地投射於基板P之描繪面。此時,係以旋轉多面鏡97之各反射面97b與基板P之描繪面在與描繪線LL1正交之副掃描方向(基板P之長度方向)成光學共軛之方式,於射
向旋轉多面鏡97之描繪光束LB之光路中與從f-θ透鏡系85射出之描繪光束LB之光路中分別配置有圓筒透鏡(未圖示),亦設有與f-θ透鏡系85協同動作之面歪斜(optical face tangle error)修正光學系。
The drawing beam LB irradiated from the
如圖7所示,複數個描繪模組UW1~UW5中之複數個掃描器83係相對中心面p3成左右對稱構成。複數個掃描器83,其與描繪模組UW1、UW3、UW5對應之3個掃描器83係配置在旋轉捲筒DR之旋轉方向上游側(圖7之-X方向側),與描繪模組UW2、UW4對應之2個掃描器83則配置在旋轉捲筒DR之旋轉方向下游側(圖7之+X方向側)。而上游側之3個掃描器83與下游側之2個掃描器83係夾著中心面p3對向配置。此時,配置於上游側之各掃描器83與配置於下游側之各掃描器83係以旋轉軸I為中心成為180°點對稱的構成。因此,在上游側之3個旋轉多面鏡97一邊向左(在XY面內逆時針)旋轉、一邊對旋轉多面鏡97照射描繪光束LB後,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置往既定掃描方向(例如圖7之+Y方向)掃描。另一方面,在下游側之2個旋轉多面鏡97一邊向左旋轉、一邊對旋轉多面鏡97照射描繪光束LB後,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置,往與上游側之3個旋轉多面鏡97相反之掃描方向(例如圖7之-Y方向)掃描。
As shown in FIG. 7, the plurality of
此處,於圖4之XZ面內觀察時,從奇數號描繪模組UW1、UW3、UW5到達基板P之描繪光束LB之軸線,係與設置方位線Le1一致之方向。也就是說,設置方位線Le1,於XZ面內,係連結奇數號描繪線LL1、LL3、LL5與旋轉中心線AX2之線。同樣的,於圖4之XZ面內觀察時,從 偶數號描繪模組UW2、UW4到達基板P之描繪光束LB之軸線,係與設置方位線Le2一致之方向。也就是說,設置方位線Le2,於XZ面內,係連結偶數號描繪線LL2、LL4與旋轉中心線AX2之線。 Here, when viewed in the XZ plane of FIG. 4, the axis of the drawing beam LB that reaches the substrate P from the odd-number drawing modules UW1, UW3, and UW5 is the same direction as the installation direction line Le1. That is to say, the azimuth line Le1 is set, and in the XZ plane, the lines connecting the odd-numbered drawing lines LL1, LL3, LL5 and the rotation center line AX2 are connected. Similarly, when viewed in the XZ plane of Figure 4, from The axis of the drawing beams LB of the even-numbered drawing modules UW2 and UW4 reaching the substrate P is in the same direction as the set azimuth line Le2. That is, the azimuth line Le2 is set, and in the XZ plane, a line connecting the even-numbered drawing lines LL2 and LL4 and the rotation center line AX2 is connected.
Y倍率修正用光學構件86,配置在f-θ透鏡系85與基板P之間。Y倍率修正用光學構件86,係使以各描繪模組UW1~UW5形成之描繪線LL1~LL5之Y方向尺寸微幅放大或縮小。
The
以此方式構成之描繪裝置11,由控制裝置16控制各部以於基板P上描繪既定圖案。也就是說,控制裝置16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD(Computer Aided Design)資訊(例如點陣形式),藉由對光偏向器81進行ON/OFF調變據以使描繪光束LB偏向,以於基板P之光感應層上描繪出圖案。又,控制裝置16使沿描繪線LL1掃描之描繪光束LB之掃描方向、與基板P藉由旋轉捲筒DR之旋轉而往搬送方向之移動同步,據以在曝光區域A7中對應描繪線LL1之部分描繪既定圖案。
In the
此時,將從各描繪模組UW1~UW5投射之描繪光束LB在基板P上之尺寸(點徑)設為D(μm),將沿著描繪光束LB之描繪線LL1~LL5之掃描速度設為V(μm/秒)時,在光源裝置CNT為脈衝雷射光源之情形下,係將脈衝光之發光反覆週期T(秒)設為T<D/V之關係。 At this time, the size (point diameter) of the drawing beam LB projected from each drawing module UW1 to UW5 on the substrate P is set to D (μm), and the scanning speed along the drawing lines LL1 to LL5 of the drawing beam LB is set When it is V (μm/sec), when the light source device CNT is a pulsed laser light source, the light emission repetition period T (sec) of the pulsed light is set to a relationship of T<D/V.
其次,參照圖3及圖8,說明對準顯微鏡AM1、AM2。對準顯微鏡AM1、AM2係檢測預先形成在基板P上之對準標記、或形成在旋轉捲筒DR上之基準標記及基準圖案等。以下,將基板P之對準標記及旋轉捲筒DR之基準標記及基準圖案,僅簡稱為標記。對準顯微鏡AM1、AM2係
用於進行基板P與描繪在基板P上之既定圖案之位置對齊(對準)、或旋轉捲筒DR與描繪裝置11之校準。
Next, the alignment microscopes AM1 and AM2 will be described with reference to FIGS. 3 and 8. The alignment microscopes AM1 and AM2 detect alignment marks formed on the substrate P in advance, or fiducial marks and fiducial patterns formed on the rotating drum DR. Hereinafter, the alignment mark of the substrate P and the fiducial mark and fiducial pattern of the rotating reel DR are simply referred to as marks. Align microscope AM1, AM2 series
It is used to align (align) the position of the substrate P with a predetermined pattern drawn on the substrate P, or calibrate the rotating drum DR and the
對準顯微鏡AM1、AM2,較以描繪裝置11形成之描繪線LL1~LL5,設置在旋轉捲筒DR之旋轉方向上游側。又,對準顯微鏡AM1較對準顯微鏡AM2配置在旋轉捲筒DR之旋轉方向上游側。
The alignment microscopes AM1 and AM2 are provided on the upstream side in the rotation direction of the rotating drum DR compared with the drawing lines LL1 to LL5 formed by the
對準顯微鏡AM1、AM2,係由將照明光投射於基板P或旋轉捲筒DR並射入標記產生之光之作為檢測探針的對物透鏡系GA、以及將透過對物透鏡系GA受光之標記之像(亮視野像、暗視野像、螢光像等)以二維CCD、CMOS等加以拍攝的攝影系GD等構成。此外,對準用之照明光係對基板P上之光感應層幾乎不具有感度之波長帶域之光、例如波長500~800nm程度之光。 Alignment microscopes AM1, AM2 are the object lens system GA as a detection probe that projects the illumination light onto the substrate P or the rotating drum DR and the light generated by the mark, and the object lens system that will receive light through the object lens system GA Marked images (bright-field images, dark-field images, fluorescent images, etc.) are composed of a photographic system GD, etc., which is captured with a two-dimensional CCD, CMOS, or the like. In addition, the illumination light for alignment is light in a wavelength band that hardly has sensitivity to the photosensitive layer on the substrate P, for example, light with a wavelength of about 500 to 800 nm.
對準顯微鏡AM1於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。同樣的,對準顯微鏡AM2於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。也就是說,對準顯微鏡AM1、AM2合計設有6個。 A plurality of alignment microscopes AM1 (for example, three) are arranged in a line in the Y direction (the width direction of the substrate P). Similarly, a plurality of alignment microscopes AM2 (for example, three) are arranged in a row in the Y direction (the width direction of the substrate P). In other words, there are six alignment microscopes AM1 and AM2 in total.
圖3中,為易於理解,於6個對準顯微鏡AM1、AM2之各對物透鏡系GA中,顯示3個對準顯微鏡AM1之各對物透鏡系GA1~GA3之配置。3個對準顯微鏡AM1之各對物透鏡系GA1~GA3對基板P(或旋轉捲筒DR之外周面)上之觀察區域Vw1~Vw3,如圖3所示,係在與旋轉中心線AX2平行之Y方向以既定間隔配置。如圖8所示,通過各觀察區域Vw1~Vw3中心之各對物透鏡系GA1~GA3之光軸La1~La3,皆與XZ面平行。同樣的,3個對準顯微鏡AM2之各對物透鏡系GA對基板P(或旋轉 捲筒DR之外周面)上之觀察區域Vw4~Vw6,如圖3所示,在與旋轉中心線AX2平行之Y方向以既定間隔配置。如圖8所示,通過各觀察區域Vw4~Vw6中心之各對物透鏡系GA之光軸La4~La6,亦皆與XZ面平行。而觀察區域Vw1~Vw3與觀察區域Vw4~Vw6,係於旋轉捲筒DR之旋轉方向以既定間隔配置。 In FIG. 3, for easy understanding, the arrangement of the three pairs of objective lens systems GA1 to GA3 of the alignment microscope AM1 in the six alignment microscopes AM1 and AM2 is shown. The three pairs of objective lenses of the alignment microscope AM1 are the observation areas Vw1 to Vw3 on the substrate P (or the outer peripheral surface of the rotating drum DR) of GA1 to GA3, as shown in FIG. 3, and are parallel to the rotation center line AX2 The Y direction is arranged at predetermined intervals. As shown in FIG. 8, the optical axes La1 to La3 of each pair of object lenses GA1 to GA3 passing through the centers of the observation areas Vw1 to Vw3 are all parallel to the XZ plane. Similarly, each pair of object lenses of the three alignment microscopes AM2 is the GA to the substrate P (or rotated The observation areas Vw4 to Vw6 on the outer peripheral surface of the reel DR are arranged at predetermined intervals in the Y direction parallel to the rotation center line AX2 as shown in FIG. 3. As shown in FIG. 8, the optical axes La4 to La6 of each pair of objective lens systems GA passing through the centers of the observation areas Vw4 to Vw6 are also parallel to the XZ plane. The observation areas Vw1 to Vw3 and the observation areas Vw4 to Vw6 are arranged at predetermined intervals in the rotation direction of the rotating drum DR.
此對準顯微鏡AM1、AM2對標記之觀察區域Vw1~Vw6,係於基板P及旋轉捲筒DR上,例如設定在200μm對角程度之範圍。此處,對準顯微鏡AM1之光軸La1~La3、亦即對物透鏡系GA之光軸La1~La3,係設定成與從旋轉中心線AX2延伸於旋轉捲筒DR之徑方向之設置方位線Le3相同方向。也就是說,設置方位線Le3,於圖4之XZ面內觀察時,係連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線。同樣的,對準顯微鏡AM2之光軸La4~La6、亦即對物透鏡系GA之光軸La4~La6,係設定成與從旋轉中心線AX2延伸於旋轉捲筒DR之徑方向之設置方位線Le4相同方向。也就是說,設置方位線Le4,於圖4之XZ面內觀察時,係連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線。此時,對準顯微鏡AM1由於與對準顯微鏡AM2相較係配置在旋轉捲筒DR之旋轉方向上游側,因此中心面p3與設置方位線Le3所成之角度,較中心面p3與設置方位線Le4所成之角度大。 The observation areas Vw1 to Vw6 of the alignment microscopes AM1 and AM2 are marked on the substrate P and the rotating drum DR, for example, set in a range of about 200 μm diagonally. Here, the optical axes La1 to La3 of the alignment microscope AM1, that is, the optical axes La1 to La3 of the objective lens system GA are set so as to be aligned with the setting azimuth line extending from the rotation center line AX2 to the radial direction of the rotating drum DR Le3 is in the same direction. In other words, when the azimuth line Le3 is set and observed in the XZ plane of FIG. 4, it is a line connecting the observation areas Vw1 to Vw3 aligned with the microscope AM1 and the rotation center line AX2. Similarly, the optical axes La4 to La6 of the alignment microscope AM2, that is, the optical axes La4 to La6 of the objective lens system GA are set to the azimuth line extending from the rotation center line AX2 to the radial direction of the rotating drum DR Le4 is in the same direction. That is to say, when the azimuth line Le4 is set and observed in the XZ plane in FIG. 4, it is a line connecting the observation area Vw4 to Vw6 aligned with the microscope AM2 and the rotation center line AX2. At this time, since the alignment microscope AM1 is arranged upstream of the rotation direction of the rotating drum DR compared to the alignment microscope AM2, the angle formed by the center plane p3 and the azimuth line Le3 is smaller than the center plane p3 and the azimuth line The angle formed by Le4 is large.
於基板P上,如圖3所示,以5條描繪線LL1~LL5之各個描繪之曝光區域A7,於X方向相距既定間隔配置。於基板P上之曝光區域A7周圍,有用以進行位置對準之複數個對準標記Ks1~Ks3(以下,簡稱標記),例如形成為十字狀。 On the substrate P, as shown in FIG. 3, the exposure areas A7 drawn by the five drawing lines LL1 to LL5 are arranged at a predetermined interval in the X direction. Around the exposure area A7 on the substrate P, a plurality of alignment marks Ks1 to Ks3 (hereinafter, referred to as marks) for positioning are formed, for example, in a cross shape.
圖3中,標記Ks1係在曝光區域A7之-Y側周邊區域於X方向以一定間隔設置,標記Ks3在曝光區域A7之+Y側周邊區域於X方向以一定間隔設置。進一步的,標記Ks2,在X方向相鄰之2個曝光區域A7間之空白區域中,設在Y方向之中央。 In FIG. 3, the mark Ks1 is provided at a certain interval in the X direction on the -Y side peripheral area of the exposure area A7, and the mark Ks3 is provided at a certain interval in the X direction in the +Y side peripheral area of the exposure area A7. Further, the mark Ks2 is provided in the center of the Y direction in the blank area between the two exposure areas A7 adjacent in the X direction.
標記Ks1,係以在對準顯微鏡AM1之對物透鏡系GA1之觀察區域Vw1內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw4內,於基板P之搬送期間能被依序捕捉之方式形成。又,標記Ks3,係以在對準顯微鏡AM1之對物透鏡系GA3之觀察區域Vw3內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw6內,於基板P之搬送期間能被依序捕捉之方式形成。進一步的,標記Ks2,係以分別在對準顯微鏡AM1之對物透鏡系GA2之觀察區域Vw2內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw5內,於基板P之搬送期間被依序捕捉之方式形成。 The mark Ks1 is in the observation area Vw1 of the objective lens system GA1 aligned with the microscope AM1 and the observation area Vw4 of the objective lens system GA aligned with the microscope AM2, and can be captured in sequence during the transfer of the substrate P Way to form. In addition, the mark Ks3 is within the observation area Vw3 of the objective lens system GA3 of the alignment microscope AM1 and within the observation area Vw6 of the objective lens system GA of the alignment microscope AM2, and can be Formed in order to capture. Further, the mark Ks2 is respectively in the observation area Vw2 of the objective lens system GA2 of the alignment microscope AM1 and the observation area Vw5 of the objective lens system GA of the alignment microscope AM2 during the conveyance period of the substrate P Formed in order to capture.
因此,3個對準顯微鏡AM1、AM2中之旋轉捲筒DR之Y方向兩側之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在基板P之寬度方向兩側之標記Ks1、Ks3。又,3個對準顯微鏡AM1、AM2中之旋轉捲筒DR之Y方向中央之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在描繪於基板P上之曝光區域A7彼此間之空白部等之標記Ks2。 Therefore, the alignment microscopes AM1 and AM2 on the two sides in the Y direction of the rotating drum DR in the alignment microscopes AM1 and AM2 can observe or detect the marks Ks1 and Ks3 formed on both sides in the width direction of the substrate P at any time. In addition, the three alignment microscopes AM1 and AM2 of the center of the rotating drum DR in the Y direction of the alignment microscopes AM1 and AM2 can observe or detect the blanks formed between the exposure areas A7 drawn on the substrate P at any time. Mark Ks2.
此處,曝光裝置EX由於適用了所謂的多光束型描繪裝置11,因此為了將以複數個描繪模組UW1~UW5之各描繪線LL1~LL5於基板P上描繪之複數個圖案彼此於Y方向適當的加以接合,用以將複數個描繪模組UW1~UW5之接合精度抑制在容許範圍內之校準是必須的。此外,對準顯微鏡AM1、AM2對複數個描繪模組UW1~UW5之各描繪線LL1~
LL5之觀察區域Vw1~Vw6之相對配置關係(或相對於設計上之配置間隔之誤差量)被稱為基準線,相對配置關係或誤差量,須以基準線管理加以精密的求出。為進行此基準線管理,亦須校準。
Here, since the so-called multi-beam
於用以確認複數個描繪模組UW1~UW5之接合精度的校準、用以進行對準顯微鏡AM1、AM2之基準線管理之校準中,須於支承基板P之旋轉捲筒DR外周面之至少一部設置基準標記或基準圖案。因此,如圖9所示,於曝光裝置EX,係使用在外周面設有基準標記或基準圖案之旋轉捲筒DR。 In the calibration for confirming the joint accuracy of the plurality of drawing modules UW1 to UW5 and the calibration for the baseline management of the alignment microscopes AM1 and AM2, at least one of the outer peripheral surfaces of the rotating drum DR supporting the substrate P Set fiducial marks or fiducial patterns. Therefore, as shown in FIG. 9, the exposure device EX uses a rotating reel DR provided with a fiducial mark or fiducial pattern on the outer peripheral surface.
旋轉捲筒DR於其外周面之兩端側,形成有構成後述旋轉位置檢測機構14之一部分之標尺部GPa、GPb。又,旋轉捲筒DR,於標尺部GPa、GPb之內側,於全周刻設有由凹狀槽、或凸狀邊緣構成之寬度窄的限制帶CLa、CLb。基板P之Y方向寬度被設定為較該2條限制帶CLa、CLb之Y方向間隔小,基板P係在旋轉捲筒DR之外周面中緊貼以限制帶CLa、CLb所夾之內側區域而被支承。
The rotating drum DR has scale portions GPa and GPb forming part of the rotation
旋轉捲筒DR,在以限制帶CLa、CLb所夾之外周面,設有將相對旋轉中心線AX2以+45度傾斜之複數個線圖案RL1、與相對旋轉中心線AX2以-45度傾斜之複數個線圖案RL2以一定節距(週期)Pf1、Pf2重複刻設之網格狀的基準圖案(亦可利用為基準標記)RMP。 The rotating drum DR is provided with a plurality of line patterns RL1 inclined at a relative rotation center line AX2 at +45 degrees on the outer peripheral surface sandwiched by the restriction bands CLa and CLb, and inclined at a relative rotation center line AX2 at -45 degrees A plurality of line patterns RL2 is a grid-shaped reference pattern (which can also be used as a reference mark) RMP repeatedly carved at a certain pitch (period) Pf1 and Pf2.
基準圖案RMP,為避免在基板P與旋轉捲筒DR外周面之接觸部分產生摩擦力或基板P之張力等之變化,係全面均一之斜圖案(斜格子狀圖案)。又,線圖案RL1、RL2並不一定必須是傾斜45度,亦可以是將線圖案RL1作成與Y軸平行、線圖案RL2作成與X軸平行之縱橫的網格 狀圖案。再者,不一定須使線圖案RL1、RL2以90度交叉,亦可使相鄰之2條線圖案RL1與相鄰之2條線圖案RL2所圍成之矩形區域,以成為正方形(或長方形)以外之菱形的角度使線圖案RL1、RL2交叉。 The reference pattern RMP is a diagonal pattern (inclined grid pattern) that is uniform in all directions in order to avoid changes in frictional force or tension of the substrate P at the contact portion between the substrate P and the outer surface of the rotating drum DR. In addition, the line patterns RL1 and RL2 do not necessarily have to be inclined at 45 degrees, and the line pattern RL1 may be made a horizontal and vertical grid parallel to the Y axis and the line pattern RL2 parallel to the X axis. Pattern. Furthermore, it is not necessary to make the line patterns RL1 and RL2 intersect at 90 degrees, and the rectangular area enclosed by the two adjacent line patterns RL1 and the adjacent two line patterns RL2 can also be made into a square (or rectangular ) The angles other than the diamond shape intersect the line patterns RL1 and RL2.
其次,參照圖3、圖4及圖8說明旋轉位置檢測機構14。如圖8所示,旋轉位置檢測機構14係以光學方式檢測旋轉捲筒DR之旋轉位置之物,可適用例如使用旋轉編碼器等之編碼器系統。旋轉位置檢測機構14具有設在旋轉捲筒DR兩端部之標尺部(指標)GPa、GPb、以及與標尺部GPa、GPb之各個對向之複數個編碼器讀頭(讀取頭)EN1、EN2、EN3、EN4。圖4及圖8中,雖僅顯示與標尺部GPa對向之4個編碼器讀頭EN1、EN2、EN3、EN4,但在標尺部GPb亦同樣的有對向配置之編碼器讀頭EN1、EN2、EN3、EN4(參照圖10)。
Next, the rotation
標尺部GPa、GPb於旋轉捲筒DR之外周面周方向全體分別形成為環狀。標尺部GPa、GPb之刻度係於旋轉捲筒DR之外周面周方向以一定節距(例如20μm)刻設凹狀或凸狀之格子線的繞射格子,構成為遞增(incremental)型標尺。因此,標尺部GPa、GPb係繞旋轉中心線AX2而與旋轉捲筒DR一體旋轉。 The scale portions GPa and GPb are formed in a ring shape on the entire outer circumferential surface of the rotating drum DR in the circumferential direction. The scales of the scale parts GPa and GPb are formed by a diffraction grid in which concave or convex grid lines are engraved at a certain pitch (for example, 20 μm) in the circumferential direction of the outer surface of the rotating drum DR, and constitute an incremental scale. Therefore, the scale parts GPa and GPb rotate integrally with the rotating drum DR around the rotation center line AX2.
基板P,係在避開旋轉捲筒DR兩端之標尺部GPa、GPb之內側、亦即捲繞在限制帶CLa、CLb之內側。若須有嚴格之配置關係時,係設定標尺部GPa、GPb之外周面、與捲繞在旋轉捲筒DR之基板P之部分之外周面成同一面(距中心線AX2同一半徑)。為達成此,將標尺部GPa、GPb之外周面,相對旋轉捲筒DR之基板捲繞用外周面,作成於徑方向高基板P之厚度量即可。因此,可將形成於旋轉捲筒DR之標尺部GPa、GPb之外周 面,設定為與基板P之外周面大致同一半徑。從而,編碼器讀頭EN1、EN2、EN3、EN4,可在與捲繞於旋轉捲筒DR之基板P上之描繪面相同徑方向位置檢測標尺部GPa、GPb,縮小測量位置與處理位置因旋轉系之徑方向相異而產生之阿貝誤差。 The substrate P is wound inside the scale portions GPa and GPb at both ends avoiding the rotating reel DR, that is, inside the restriction tapes CLa and CLb. If a strict arrangement relationship is required, the outer peripheral surfaces of the scale parts GPa and GPb are set to be the same as the outer peripheral surface of the portion of the substrate P wound around the rotating reel DR (the same radius from the center line AX2). In order to achieve this, the outer peripheral surfaces of the scale portions GPa and GPb, and the outer peripheral surface of the substrate winding relative to the rotating reel DR, may be made higher in the radial direction by the thickness of the substrate P. Therefore, the scale portions GPa and GPb formed on the rotating drum DR can be The surface is set to be substantially the same radius as the outer peripheral surface of the substrate P. Therefore, the encoder heads EN1, EN2, EN3, and EN4 can detect the scale parts GPa and GPb at the same radial position as the drawing surface wound on the substrate P of the rotating reel DR, reducing the measurement position and processing position due to rotation Abbe error caused by different radial directions.
編碼器讀頭EN1、EN2、EN3、EN4,從旋轉中心線AX2觀察係分別配置在標尺部GPa、GPb之周圍,於旋轉捲筒DR之周方向之不同位置。此編碼器讀頭EN1、EN2、EN3、EN4連接於控制裝置16。編碼器讀頭EN1、EN2、EN3、EN4朝標尺部GPa、GPb投射測量用光束,對其反射光束(繞射光)進行光電檢測,據以將對應標尺部GPa、GPb之周方向位置變化之檢測訊號(例如具有90度相位差之2相訊號)輸出至控制裝置16。控制裝置16,藉由對來自編碼器讀頭EN1~EN4之各個之檢測訊號(2相訊號)以未圖示之計數電路加以內插進行數位處理,即能以次微米之分解能力測量旋轉捲筒DR之角度變化、亦即測量在編碼器讀頭EN1~EN4之各個之設置位置之旋轉捲筒DR外周面之周方向位置變化。此時,控制裝置16,亦可從旋轉捲筒DR之角度變化測量基板P在旋轉捲筒DR之搬送速度或周方向之移動量。
The encoder read heads EN1, EN2, EN3 and EN4 are arranged around the scale parts GPa and GPb as viewed from the rotation center line AX2, at different positions in the circumferential direction of the rotary drum DR. The encoder read heads EN1, EN2, EN3, EN4 are connected to the
又,如圖4及圖8所示,編碼器讀頭EN1係配置在設置方位線Le1上。設置方位線Le1,係於XZ面內,連結編碼器讀頭EN1之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2的線。又,如上所述,設置方位線Le1,係於XZ面內,連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN1之讀取位置與旋轉中心線AX2之線、與連結描繪線LL1、LL3、LL5與旋轉中 心線AX2之線係相同方位線。 Furthermore, as shown in FIGS. 4 and 8, the encoder read head EN1 is arranged on the set azimuth line Le1. The azimuth line Le1 is set in the XZ plane, and connects the line of the projection area (reading position) on the scale part GPa (GPb) of the measuring beam EN1 of the encoder read head EN1 and the rotation center line AX2. In addition, as described above, the azimuth line Le1 is provided in the XZ plane, and connects the drawing lines LL1, LL3, LL5 and the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder head EN1 and the rotation center line AX2, and the connection drawing line LL1, LL3, LL5 and the rotation The line of the heart line AX2 is the same azimuth line.
同樣的,如圖4及圖8所示,編碼器讀頭EN2係配置在設置方位線Le2上。設置方位線Le2,係於XZ面內,連結編碼器讀頭EN2之測量用光束對標尺部GPa(GPb)上之投射區域與旋轉中心線AX2之線。又,如上所述,設置方位線Le2,係於XZ面內,連結描繪線LL2、LL4與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN2之讀取位置與旋轉中心線AX2之線、與連結描繪線LL2、LL4與旋轉中心線AX2之線係相同方位線。 Similarly, as shown in FIGS. 4 and 8, the encoder read head EN2 is arranged on the set azimuth line Le2. The azimuth line Le2 is set in the XZ plane and connects the measuring beam pair of the encoder reading head EN2 to the projection area on the scale part GPa (GPb) and the line of the rotation center line AX2. In addition, as described above, the azimuth line Le2 is provided in the XZ plane, and connects the drawing lines LL2, LL4 and the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder read head EN2 and the rotation center line AX2, and the line connecting the drawing lines LL2, LL4 and the rotation center line AX2 are the same azimuth lines.
又,如圖4及圖8所示,編碼器讀頭EN3係配置在設置方位線Le3上。設置方位線Le3,係於XZ面內,連結編碼器讀頭EN3之測量用光束對標尺部GPa(GPb)上之投射區域與旋轉中心線AX2之線。又,如上所述,設置方位線Le3,係於XZ面內,連結對準顯微鏡AM1對基板P之觀察區域Vw1~Vw3與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN3之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線,係相同方位線。 In addition, as shown in FIGS. 4 and 8, the encoder read head EN3 is arranged on the set azimuth line Le3. The azimuth line Le3 is set in the XZ plane and connects the measurement beam pair of the encoder reading head EN3 to the projection area on the scale part GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le3 is provided in the XZ plane, and connects the line aligning the observation area Vw1 to Vw3 of the microscope AM1 to the substrate P and the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder read head EN3 and the rotation center line AX2 and the line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 are the same azimuth line.
同樣的,如圖4及圖8所示,編碼器讀頭EN4係配置在設置方位線Le4上。設置方位線Le4,係於XZ面內,連結編碼器讀頭EN4之測量用光束對標尺部GPa(GPb)上之投射區域與旋轉中心線AX2之線。又,如上所述,設置方位線Le4,係於XZ面內,連結對準顯微鏡AM2對基板P之觀察區域Vw4~Vw6與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN4之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線,係相同方位線。 Similarly, as shown in FIGS. 4 and 8, the encoder read head EN4 is arranged on the set azimuth line Le4. The azimuth line Le4 is set in the XZ plane and connects the measurement beam pair of the encoder reading head EN4 to the projection area on the scale part GPa (GPb) and the line of the rotation center line AX2. In addition, as described above, the azimuth line Le4 is provided in the XZ plane, and connects the line aligning the observation area Vw4 to Vw6 of the microscope AM2 to the substrate P and the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder read head EN4 and the rotation center line AX2 and the line connecting the observation area Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2 are the same azimuth line.
將編碼器讀頭EN1、EN2、EN3、EN4之設置方位(以旋轉中心線AX2為中心之在XZ面內的角度方向)以設置方位線Le1、Le2、Le3、Le4表示之情形時,如圖4所示,係將複數個描繪模組UW1~UW5及編碼器讀頭EN1、EN2配置成設置方位線Le1、Le2相對中心面p3成角度±θ°。 When setting the orientation of the encoder read heads EN1, EN2, EN3, EN4 (angle direction in the XZ plane centered on the rotation center line AX2) to set the orientation line Le1, Le2, Le3, Le4, as shown in the figure As shown in 4, a plurality of drawing modules UW1 to UW5 and encoder read heads EN1 and EN2 are arranged to set the azimuth lines Le1 and Le2 at an angle ±θ° with respect to the central plane p3.
此處,控制裝置16,係以編碼器讀頭EN1、EN2檢測標尺部(旋轉捲筒DR)GPa、GPb之旋轉角度位置,並根據檢測出之旋轉角度位置一邊特定基板P之移動位置、一邊進行奇數號及偶數號描繪模組UW1~UW5之描繪控制。也就是說,控制裝置16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊進行光偏向器81之ON/OFF調變,但亦可將使用光偏向器81之ON/OFF調變之時序,根據所檢測之旋轉角度位置(基板P之移動位置)來進行,藉此能於基板P之光感應層上以良好精度描繪圖案。
Here, the
又,控制裝置16,可藉由儲存以對準顯微鏡AM1、AM2檢測基板P上之對準標記Ks1~Ks3時、以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉捲筒DR)之旋轉角度位置,而能求出基板P上之對準標記Ks1~Ks3之位置與旋轉捲筒DR之旋轉角度位置的對應關係。同樣的,控制裝置16,藉由儲存以對準顯微鏡AM1、AM2檢測旋轉捲筒DR上之基準圖案RMP時以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉捲筒DR)之旋轉角度位置,而能求出旋轉捲筒DR上之基準圖案RMP之位置與旋轉捲筒DR之旋轉角度位置的對應關係。如以上所述,對準顯微鏡AM1、AM2,可精密的測量於觀察區域Vw1~Vw6內,對標記進行取樣(sampling)之瞬間之旋轉捲筒DR之旋轉角度位置(或周方向位置)。曝光
裝置EX,即根據此測量結果,進行基板P與描繪於基板P上之既定圖案的對位(對準)、或旋轉捲筒DR與描繪裝置11之校準。
Furthermore, the
此外,多光束型之曝光裝置EX,係一邊以旋轉捲筒DR將基板P搬送於搬送方向(長度方向)、一邊沿著基板P上之複數條描繪線LL1~LL5掃描描繪光束LB之點光。此處,基板P雖係捲繞於旋轉捲筒DR之外周面一部分而被搬送,但有時會因旋轉捲筒DR之旋轉產生之振動等影響,使旋轉捲筒DR與第2光學平台25之配置關係相對地位移。作為旋轉捲筒DR與第2光學平台25之配置關係之位移,例如有於XY面內旋轉捲筒DR與旋轉中心線AX2相對Y方向傾斜的情形。此情形下,會因旋轉捲筒DR之位置位移,而使捲繞於旋轉捲筒DR之基板P與設置於第2光學平台25上之描繪裝置11的相對配置關係,從適於曝光之既定相對配置關係(初始設定狀態)位移。因此,第1實施形態之曝光裝置EX,係為了測量旋轉捲筒DR與描繪裝置11之相對配置關係而將編碼器讀頭EN1~EN4之安裝設成如圖10所示之構成。
In addition, the multi-beam exposure device EX scans the spot light of the drawing beam LB along the plurality of drawing lines LL1 to LL5 on the substrate P while transporting the substrate P in the transport direction (longitudinal direction) with the rotating drum DR . Here, although the substrate P is wound around a part of the outer peripheral surface of the rotating reel DR and is transported, the rotating reel DR and the second optical table 25 may be affected by vibrations caused by the rotation of the rotating reel DR, etc. The configuration relationship is relatively displaced. As the displacement of the arrangement relationship between the rotating reel DR and the second optical table 25, for example, the rotating reel DR and the rotation center line AX2 may be inclined with respect to the Y direction in the XY plane. In this case, due to the displacement of the position of the rotating reel DR, the relative arrangement relationship between the substrate P wound on the rotating reel DR and the
圖10係顯示圖1之曝光裝置之編碼器讀頭之配置之俯視圖。如圖10所示,編碼器讀頭(第1檢測裝置)EN1、EN2,係透過安裝構件100安裝於第2光學平台25。另一方面,編碼器讀頭(第2檢測裝置)EN3、EN4係透過安裝構件101安裝於本體框架21,又,對準顯微鏡AM1、AM2亦安裝於本體框架21。編碼器讀頭EN1、EN2,係對應於設在旋轉捲筒DR之旋轉中心線AX2兩側之一對標尺部GPa、GPb而設有一對。因此,一對編碼器讀頭EN1、EN2,係檢測標尺部GPa、GPb各自之旋轉位置。
10 is a plan view showing the configuration of the encoder read head of the exposure apparatus of FIG. As shown in FIG. 10, the encoder read heads (first detection devices) EN1 and EN2 are mounted on the second optical table 25 through the mounting
又,於第1光學平台23與第2光學平台25之間設有測量旋
轉機構24之旋轉量之旋轉量測量裝置105。旋轉量測量裝置105,例如使用線性編碼器,以直動之方向沿著旋轉軸I之周方向之方式配置於與旋轉軸I相距較遠之側。控制裝置16,係根據以旋轉量測量裝置105檢測之在旋轉軸I周方向之微少移動量,檢測第2光學平台25相對於第1光學平台23之旋轉量。又,旋轉機構24包含驅動部106,藉由驅動部106被控制裝置16驅動控制以使第2光學平台25旋轉。此時,控制裝置16,係以使用旋轉量測量裝置105檢測出之旋轉量成為既定旋轉量之方式,進行驅動部106之驅動控制以使第2光學平台25旋轉。
In addition, a measuring rotary is provided between the first optical table 23 and the second optical table 25
A rotation
圖11,係說明於圖10之構成中旋轉捲筒DR與描繪裝置11(特別是第2光學平台25)在XY面內相對地微幅旋轉之情形的俯視圖。如圖11所示,旋轉捲筒DR之旋轉中心線AX2延伸於Y方向,旋轉中心線AX2在成為與靜止座標系XYZ之Y軸正確地平行之狀態時,旋轉中心線AX2位於基準位置。此處,在XY面內,旋轉中心線AX2會因地面振動或來自裝置內驅動源之振動等的影響,而從基準位置傾斜既定角度θz量。此外,圖11中,將往左旋轉之位移設為+θz,將往右旋轉之位移設為-θz。在XY面內,若旋轉中心線AX2從基準位置傾斜既定角度量,則旋轉捲筒DR在軸方向之一端部會往既定方向(例如圖11之-X方向)移動,另一方面,旋轉捲筒DR在軸方向之另一端部會往與旋轉捲筒DR之一端部相反之方向(例如圖11之+X方向)移動。 FIG. 11 is a plan view illustrating a state in which the rotating drum DR and the drawing device 11 (particularly, the second optical table 25) rotate relatively slightly in the XY plane in the configuration of FIG. As shown in FIG. 11, the rotation center line AX2 of the rotating reel DR extends in the Y direction. When the rotation center line AX2 is accurately parallel to the Y axis of the stationary coordinate system XYZ, the rotation center line AX2 is located at the reference position. Here, in the XY plane, the rotation center line AX2 is inclined by a predetermined angle θ z from the reference position due to the influence of ground vibration or vibration from a driving source in the device. In addition, in FIG. 11, the displacement to the left is set to +θ z , and the displacement to the right is set to −θ z . In the XY plane, if the rotation center line AX2 is inclined by a predetermined angle from the reference position, one end of the rotating drum DR in the axial direction will move in a predetermined direction (for example, -X direction in FIG. 11). The other end of the drum DR in the axial direction will move in a direction opposite to one end of the rotating drum DR (for example, +X direction in FIG. 11).
因此,一對編碼器讀頭EN1、EN2,藉由旋轉中心線AX2從基準位置傾斜既定角度θz量,而會於以標尺部GPa側之編碼器讀頭EN1、EN2檢測出之旋轉位置(標尺部GPa之移動位置)與以標尺部GPb
側之編碼器讀頭EN1、EN2檢測出之旋轉位置(標尺部GPb之移動位置)產生與角度θz相應的差。是以,控制裝置16,能根據以一對編碼器讀頭EN1、EN2檢測出之旋轉位置,檢測出在XY面內之旋轉捲筒DR之旋轉中心線AX2之傾斜角度θz。具體而言,在將以與標尺部GPa側之編碼器讀頭EN1對應之計數電路計數之計數值(標尺GPa之移動位置)設為CD1a,將以與標尺部GPb側之編碼器讀頭EN1對應之計數電路計數之計數值(標尺GPb之移動位置)設為CD1b時,係將計數值CD1a與計數值CD1b之差分值每於旋轉捲筒DR(標尺部GPa、GPb)旋轉一定角度或每於一定時間逐次求出,並監控該差分值之變化,藉此能測量旋轉捲筒DR之旋轉中心線AX2在XY面內之傾斜變動(角度θz)。關於一對編碼器讀頭EN2亦同樣地,只要將以與標尺部GPa側之編碼器讀頭EN2對應之計數電路計數之計數值(標尺GPa之移動位置)設為CD2a,將以與標尺部GPb側之編碼器讀頭EN2對應之計數電路計數之計數值(標尺GPb之移動位置)設為CD2b,並監控該差分值之變化。
Therefore, a pair of encoder heads EN1 and EN2 are tilted from the reference position by a predetermined angle θ z by the rotation center line AX2, and the rotation position detected by the encoder heads EN1 and EN2 on the scale part GPa side ( The movement position of the scale part GPa) and the rotation position detected by the encoder heads EN1 and EN2 on the scale part GPb side (the movement position of the scale part GPb) produce a difference corresponding to the angle θ z . Therefore, the
此外,在傾斜變動(角度θz)之測量時,由於一對編碼器讀頭EN1與一對編碼器讀頭EN2係如先前之圖4般在X方向設置於隔著中心面p3而對稱之位置,因此亦可監控與標尺部GPa對向之編碼器讀頭EN1之計數值CD1a及與標尺部GPb對向之編碼器讀頭EN2之計數值CD2b的差分值之變化、或與標尺部GPa對向之編碼器讀頭EN2之計數值CD2a及與標尺部GPb對向之編碼器讀頭EN1之計數值CD1b的差分值之變化。 In addition, in the measurement of the tilt variation (angle θ z ), since the pair of encoder read heads EN1 and the pair of encoder read heads EN2 are arranged symmetrically across the center plane p3 in the X direction as in the previous FIG. 4 Position, so you can also monitor the change in the count value CD1a of the encoder head EN1 opposite the scale part GPa and the difference value of the count value CD2b of the encoder head EN2 opposite the scale part GPb, or the change in the scale part GPa The difference between the count value CD2a of the encoder head EN2 facing the encoder and the count value CD1b of the encoder head EN1 facing the scale part GPb.
此處,控制裝置16,為了適當地對以旋轉捲筒DR搬送之基板P進行描繪裝置11之描繪,而根據對準顯微鏡AM1、AM2之檢測結果,
修正相對於基板P之描繪裝置11之位置。也就是說,控制裝置16,係根據以對準顯微鏡AM1、AM2檢測出之標記Ks1~Ks3之位置,檢測基板P之形狀或已形成於基板P上之元件圖案(基底圖案)區域之變形等之狀態,求出與檢測出之變形狀態(特別是傾斜等)對應之相對之修正旋轉量θ2。此外,修正旋轉量θ2係從延伸於X方向之基準線起之角度。此外,圖11中,將往左旋轉之位移設為+θ2,往右旋轉之位移設為-θ2。接著,控制裝置16,根據所求出之修正旋轉量θ2控制旋轉機構24之驅動部106,藉此修正相對於旋轉捲筒DR之第2光學平台25之配置關係。
Here, the
此時,控制裝置16,在根據所求出之相對修正旋轉量θ2使旋轉機構24(第2光學平台25)從初始位置旋轉修正後,由於編碼器讀頭EN1、EN2亦會旋轉,因此無法考量於旋轉修正後所測量之旋轉中心線AX2之傾斜θz、亦即會變得沒有意義。因此,控制裝置16,係考量事前(或前一刻)測量之旋轉中心線AX2之傾斜θz,根據修正旋轉量θ2使旋轉機構24旋轉。
At this time, the control means 16, the correction according to the relative rotation amount of the obtained 2 θ rotation mechanism 24 (the second optical table 25) from an initial position after the rotation correction, since the encoder head EN1, EN2 will rotate, The inclination θ z of the rotation center line AX2 measured after the rotation correction cannot be considered, which becomes meaningless. Therefore, the
具體而言,控制裝置16,係以根據對準顯微鏡AM1、AM2之檢測結果所測量之相對修正旋轉量θ2成為零之方式、也就是「θ2-θz(=0°)」成為零之方式,一邊以旋轉量測量裝置105測量旋轉機構24所致之旋轉量,一邊使旋轉機構24旋轉。
Specifically, the
如此,控制裝置16,係根據一對編碼器讀頭EN1、EN2之各檢測結果,從旋轉捲筒DR與第2光學平台25之既定相對配置關係,求出偏移資訊亦即在XY面內之旋轉中心線AX2之傾斜(在XY面內之旋轉捲筒DR之傾斜)θz,以與以對準顯微鏡AM1、AM2求出之基板P在XY
面內之傾斜對應之修正旋轉量θ2與旋轉中心線AX2之傾斜θz之偏差減少的方式、也就是維持既定相對配置關係之方式,控制旋轉機構24之驅動部106。
In this way, the
其次,參照圖12說明曝光裝置EX之調整方法。圖12係第1實施形態之曝光裝置之調整方法相關之流程圖。控制裝置16,在為了以描繪裝置11適當地對基板P進行描繪,而以旋轉機構24修正旋轉捲筒DR與第2光學平台25之配置關係時,首先取得以對準顯微鏡AM1、AM2檢測之檢測結果(基板P上之元件圖案區域之傾斜等)(步驟S1)。控制裝置16,根據以對準顯微鏡AM1、AM2檢測之檢測結果,求出待以旋轉機構24調整之修正旋轉量θ2(步驟S2)。此後,控制裝置16,係從一對編碼器讀頭EN1、EN2之檢測結果之比較取得與傾斜θz相關之資訊(步驟S3)。控制裝置16,根據以一對編碼器讀頭EN1、EN2檢測出之標尺部GPa、GPb各自之旋轉角度位置(計數值CD1a,CD1b,CD2a,CD2b),求出旋轉中心線AX2之傾斜θz(步驟S4)。接著,控制裝置16,以求出之修正旋轉量θ2及旋轉中心線AX2之傾斜θz之偏差、也就是「θ2-θz」成為零之方式,對旋轉機構24進行反饋控制等來使之旋轉(步驟S5)。此外,在此步驟S5之後,控制裝置16,係再度根據以一對編碼器讀頭EN1、EN2檢測出之標尺部GPa、GPb各自之旋轉角度位置(計數值CD1a、CD1b、CD2a、CD2b),以適當之時間間隔求出旋轉中心線AX2之新的傾斜θ’z。接著,當因裝置之振動等使新的傾斜θ’z變化時,係以維持該新的傾斜θ’z之方式對旋轉機構24進行反饋控制。
Next, a method of adjusting the exposure device EX will be described with reference to FIG. 12 is a flowchart related to the adjustment method of the exposure apparatus according to the first embodiment. When the
以上之第1實施形態,由於係將編碼器讀頭EN1、EN2安裝
於第2光學平台25,因此曝光裝置EX能根據編碼器讀頭EN1、EN2之檢測結果,求出在XY面內之旋轉捲筒DR與第2光學平台25從既定相對配置關係起之偏移資訊(旋轉中心線AX2之傾斜θz)。接著,曝光裝置EX,能根據所求出之偏移資訊,修正旋轉捲筒DR與第2光學平台25之相對配置關係。是以,曝光裝置EX,即使因旋轉捲筒DR之旋轉所致之振動等之影響使旋轉捲筒DR之位置位移,由於亦能維持旋轉捲筒DR與第2光學平台25之既定相對配置關係,因此能對基板P以良好精度進行描繪裝置11之描繪。
In the first embodiment above, since the encoder heads EN1 and EN2 are mounted on the second optical table 25, the exposure device EX can obtain the rotation in the XY plane based on the detection results of the encoder heads EN1 and EN2 The offset information (inclination θ z of the rotation center line AX2) from the predetermined relative arrangement relationship between the reel DR and the second optical table 25. Next, the exposure device EX can correct the relative arrangement relationship between the rotating reel DR and the second optical table 25 based on the obtained offset information. Therefore, even if the exposure device EX displaces the position of the rotating drum DR due to the vibration caused by the rotation of the rotating drum DR, the predetermined relative arrangement relationship between the rotating drum DR and the second optical table 25 can be maintained Therefore, the drawing of the
又,第1實施形態,能將編碼器讀頭EN1、EN2設於設置方位線Le1、Le2上。因此,能使連結編碼器讀頭EN1與旋轉中心線AX2之方向與連結奇數號之描繪線LL1、LL3、LL5與旋轉中心線AX2之方向成為相同方向。同樣地,能使連結編碼器讀頭EN2與旋轉中心線AX2之方向與連結偶數號之描繪線LL2、LL4與旋轉中心線AX2之方向成為相同方向。因此,能使編碼器讀頭EN1、EN2與描繪線LL1~LL5之配置關係一致。是以,由於即使旋轉捲筒DR之位置位移,亦能以編碼器讀頭EN1、EN2以良好精度測量相對於旋轉捲筒DR之描繪線LL1~LL5之配置關係,因此能進行不易受到干擾所致之影響的測量。 Furthermore, in the first embodiment, the encoder heads EN1 and EN2 can be provided on the installation azimuth lines Le1 and Le2. Therefore, the direction connecting the encoder head EN1 and the rotation center line AX2 and the direction connecting the odd-numbered drawing lines LL1, LL3, LL5 and the rotation center line AX2 can be the same direction. Similarly, the direction connecting the encoder head EN2 and the rotation center line AX2 and the direction connecting the even-numbered drawing lines LL2 and LL4 and the rotation center line AX2 can be the same direction. Therefore, the arrangement relationship between the encoder read heads EN1 and EN2 and the drawing lines LL1 to LL5 can be made consistent. Therefore, even if the position of the rotary drum DR is displaced, the arrangement relationship of the drawing lines LL1 to LL5 relative to the rotary drum DR can be measured with good accuracy by the encoder read heads EN1 and EN2, so that it is not easily interfered by interference The measurement of the impact.
又,第1實施形態,能將編碼器讀頭EN3、EN4安裝於本體框架21。因此,曝光裝置EX,能根據編碼器讀頭EN3、EN4之檢測結果,以本體框架21(旋轉捲筒DR之軸承部)作為靜止基準來進行對準顯微鏡AM1、AM2對標記Ks1~Ks3之測量。接著,曝光裝置EX,能根據對準顯微鏡AM1、AM2之檢測結果,求出待以旋轉機構24修正之相對修正旋轉
量θ2。因此,曝光裝置EX,能根據所求出之修正旋轉量θ2與作為偏移資訊亦即旋轉中心線AX2之傾斜θz之偏差,精密地修正旋轉捲筒DR與第2光學平台25之配置關係。
Furthermore, in the first embodiment, the encoder heads EN3 and EN4 can be attached to the
又,第1實施形態,能將編碼器讀頭EN3、EN4設於設置方位線Le3、Le4上。因此,能使連結編碼器讀頭EN3與旋轉中心線AX2之方向與連結觀察區域Vw1~Vw3與旋轉中心線AX2之方向成為相同方向。又,能使連結編碼器讀頭EN4與旋轉中心線AX2之方向與連結觀察區域Vw4~Vw6與旋轉中心線AX2之方向成為相同方向。因此,能使編碼器讀頭EN3、EN4與觀察區域Vw1~Vw6之配置關係一致。是以,由於即使旋轉捲筒DR之位置位移,亦能以編碼器讀頭EN3、EN4以良好精度測量相對於旋轉捲筒DR之觀察區域Vw1~Vw6之配置關係,因此能進行不易受到干擾所致之影響的測量。 Moreover, in the first embodiment, the encoder heads EN3 and EN4 can be provided on the installation azimuth lines Le3 and Le4. Therefore, the direction connecting the encoder head EN3 and the rotation center line AX2 and the direction connecting the observation regions Vw1 to Vw3 and the rotation center line AX2 can be the same direction. In addition, the direction connecting the encoder head EN4 and the rotation center line AX2 and the direction connecting the observation regions Vw4 to Vw6 and the rotation center line AX2 can be the same direction. Therefore, the arrangement relationship between the encoder read heads EN3 and EN4 and the observation areas Vw1 to Vw6 can be made consistent. Therefore, even if the position of the rotary drum DR is displaced, the encoder read heads EN3 and EN4 can measure the arrangement relationship with respect to the observation areas Vw1 to Vw6 of the rotary drum DR with good accuracy, so it is possible to carry out the interference less easily. The measurement of the impact.
又,第1實施形態,能藉由以旋轉機構24使第2光學平台25相對於第1光學平台23旋轉,來修正旋轉捲筒DR與第2光學平台25之配置關係。因此,曝光裝置EX,能將以設置於第2光學平台25之描繪裝置11形成之描繪線LL1~LL5,相對於捲繞於旋轉捲筒DR之基板P修正至適當位置,因此能以良好精度進行描繪裝置11對基板P之描繪。
Furthermore, in the first embodiment, by rotating the second optical table 25 with respect to the first optical table 23 by the rotating
此外,第1實施形態中,雖在實行用以求出修正旋轉量θ2之步驟S1及步驟S2後,實行用以求出偏移資訊之步驟S3及步驟S4,但不限定於此構成。亦可並行進行用以求出修正旋轉量θ2之步驟S1及步驟S2與用以求出偏移資訊之步驟S3及步驟S4,亦可在實行用以求出偏移資訊之步驟S3及步驟S4後,實行用以求出修正旋轉量θ2之步驟S1及步驟S2。 Further, in the first embodiment, although in practice to obtain a correction of the rotation amount θ 2 after the steps S1 and S2, for the implementation of the offset information obtaining step S3 and the step S4, the configuration is not limited thereto. Steps S1 and S2 for obtaining the correction rotation amount θ 2 and steps S3 and S4 for obtaining the offset information may be performed in parallel, and steps S3 and step for obtaining the offset information may also be performed After S4, steps S1 and S2 for obtaining the corrected rotation amount θ 2 are executed.
〔第2實施形態〕 [Second Embodiment]
其次,參照圖13說明第2實施形態之曝光裝置EX。圖13係顯示第2實施形態之曝光裝置之主要部之配置的立體圖。此外,第2實施形態中,為了避免與第1實施形態重複之記載而僅說明與第1實施形態不同之部分,針對與第1實施形態相同之構成要素,賦予與第1實施形態相同之符號進行說明。第1實施形態之曝光裝置EX中,作為旋轉捲筒DR與第2光學平台25之配置關係之位移,係說明了在XY面內旋轉捲筒DR之旋轉中心線AX2相對於X方向(基準位置)傾斜之情形。第2實施形態之曝光裝置EX中,作為旋轉捲筒DR與第2光學平台25之配置關係之位移,係說明在YZ面內旋轉捲筒DR之旋轉中心線AX2相對於Y方向(基準位置)傾斜之情形。 Next, the exposure apparatus EX of the second embodiment will be described with reference to FIG. 13. 13 is a perspective view showing the arrangement of main parts of the exposure apparatus according to the second embodiment. In addition, in the second embodiment, in order to avoid duplication of the description of the first embodiment, only the parts different from the first embodiment will be described, and the same constituent elements as the first embodiment will be given the same symbols as the first embodiment. Be explained. In the exposure apparatus EX of the first embodiment, as the displacement of the arrangement relationship between the rotating reel DR and the second optical table 25, the rotation center line AX2 of the rotating reel DR in the XY plane is described with respect to the X direction (reference position ) Inclined situation. In the exposure apparatus EX of the second embodiment, the displacement of the rotation relationship between the rotating drum DR and the second optical table 25 is described with respect to the Y direction (reference position) of the rotation center line AX2 of the rotating drum DR in the YZ plane Inclined situation.
如圖13所示,三點座22,係發揮連結本體框架21與第1光學平台23及第2光學平台25之連結機構的功能。此處,第1實施形態中,使透過三點座22連結之本體框架21與第1光學平台23發揮第1支承構件之功能,使第2光學平台25發揮第2支承構件之功能,使旋轉機構24發揮連結機構之功能。第2實施形態中,則使本體框架21發揮第1支承構件之功能,使透過旋轉機構24連結之第1光學平台23與第2光學平台25發揮第2支承構件之功能,使三點座22發揮連結機構之功能。
As shown in FIG. 13, the three-
三點座22,包含具有馬達或壓電元件等之驅動部110,藉由驅動部110被控制裝置16驅動控制,而獨立調整在各支承點22a之Z方向長度(高度),藉此調整相對於本體框架21之第1光學平台23之傾斜。此處,旋轉中心線AX2延伸於Y方向,以延伸於Y方向之旋轉中心線AX2
之位置作為基準位置。在YZ面內,作為基準位置之旋轉中心線AX2會因旋轉所致之振動等影響而從基準位置傾斜既定角度量。在旋轉中心線AX2從基準位置傾斜既定角度量後,旋轉捲筒DR在軸方向之一端部會往既定方向(例如圖13之-Z方向)移動,且旋轉捲筒DR在軸方向之另一端部會往與旋轉捲筒DR之一端部相反之方向(例如圖13之+Z方向)相對移動。
The three-
因此,一對編碼器讀頭EN1、EN2,在安裝於第2光學平台25(或第1光學平台23)側之場合,藉由旋轉中心線AX2從基準位置在YZ面內傾斜既定角度量,而能於以標尺部GPa側之編碼器讀頭EN1、EN2檢測出之旋轉角度位置(計數值CD1a、CD2a)與以標尺部GPb側之編碼器讀頭EN1、EN2檢測出之旋轉角度位置(計數值CD1b、CD2b)產生差。是以,控制裝置16,能根據以一對編碼器讀頭EN1、EN2檢測出之旋轉角度位置,檢測出在YZ面內旋轉捲筒DR之旋轉中心線AX2在YZ面內之傾斜變化。不過,以標尺部GPa側之編碼器EN1、EN2或標尺部GPb側之編碼器讀頭EN1、EN2檢測出之旋轉角度位置之資訊,對旋轉中心線AX2(旋轉捲筒DR)之Z方向位移幾乎不具有感度,係如第1實施形態般,對旋轉中心線AX2(旋轉捲筒DR)之X方向位移具有感度之構成。
Therefore, when a pair of encoder read heads EN1 and EN2 are mounted on the second optical table 25 (or the first optical table 23) side, the rotation center line AX2 is inclined from the reference position in the YZ plane by a predetermined angle, The rotation angle position (count value CD1a, CD2a) detected by the encoder heads EN1, EN2 on the scale part GPa side and the rotation angle position detected by the encoder heads EN1, EN2 on the scale part GPb side ( The count values CD1b and CD2b) are different. Therefore, the
因此,在第2實施形態中,係使用圖4、圖8、圖10、圖11中所示之對準顯微鏡AM1、AM2之設置方位上所配置之一對編碼器讀頭EN3、EN4方向,測量旋轉中心線AX2(旋轉捲筒DR)兩端側在Z方向之位移。因此,亦可如圖10、圖11所示,將安裝於本體框架21之編碼器讀頭EN3、EN4安裝於第1光學平台23或第2光學平台25,根據以與標尺部GPa對向之一對編碼器讀頭EN3、EN4檢測出之旋轉角度位置(對應之計數
電路之計數值CD3a、CD4a)及以與標尺部GPb對向之一對編碼器讀頭EN3、EN4檢測出之旋轉角度位置(對應之計數電路之計數值CD3b、CD4b)之差分,檢測在YZ面內之旋轉捲筒DR之旋轉中心線AX2相對於基準位置之旋轉中心線AX2的傾斜。
Therefore, in the second embodiment, the pair of encoder read heads EN3 and EN4 are arranged in the orientation of the alignment microscopes AM1 and AM2 shown in FIGS. 4, 8, 10 and 11. Measure the displacement in the Z direction at both ends of the rotation center line AX2 (rotating drum DR). Therefore, as shown in FIGS. 10 and 11, the encoder heads EN3 and EN4 mounted on the
接著,控制裝置16,根據一對編碼器讀頭EN3、EN4之各檢測結果(計數值CD3a、CD3b、CD4a、CD4b),從旋轉捲筒DR與第2光學平台25之既定相對配置關係求出偏移資訊亦即在YZ面內之旋轉中心線AX2之傾斜,以所求出之旋轉中心線AX2之傾斜減少之方式、也就是維持既定相對配置關係之方式控制三點座22之驅動部110,修正第2光學平台25全體之傾斜。
Next, the
以上,第2實施形態,能藉由將編碼器讀頭EN3、EN4(或編碼器讀頭EN1、EN2)安裝於第2光學平台25,根據編碼器讀頭EN3、EN4(或編碼器讀頭EN1、EN2)之檢測結果(旋轉角度位置之差分),求出在YZ面內之旋轉捲筒DR與第2光學平台25從既定相對配置關係起之偏移資訊(Z方向之位移及在YZ面內之傾斜)。接著,曝光裝置EX,能根據所求出之偏移資訊,修正旋轉捲筒DR與第2光學平台25之相對配置關係。是以,曝光裝置EX,由於即使因振動等之影響使旋轉捲筒DR之位置位移,亦能維持旋轉捲筒DR與第2光學平台25之既定相對配置關係,因此能對基板P以良好精度進行曝光。
As described above, in the second embodiment, the encoder read heads EN3, EN4 (or the encoder read heads EN1, EN2) can be mounted on the second
〔第3實施形態〕 [Third Embodiment]
其次,參照圖14說明第3實施形態之曝光裝置EX。圖14係顯示第3實施形態之曝光裝置之主要部之配置的立體圖。此外,第3實施形態亦同
樣地,為了避免與第1及第2實施形態重複之記載而僅說明與第1及第2實施形態不同之部分,針對與第1及第2實施形態相同之構成要素,賦予與第1及第2實施形態相同之符號進行說明。第1及第2實施形態之曝光裝置EX,係藉由旋轉機構24及三點座22使描繪裝置11側(第2支承構件側)之位置位移。第3實施形態之曝光裝置EX,則藉由X移動機構121及Z移動機構122使旋轉捲筒DR(旋轉中心軸AX2)之兩端側位置往X方向與Z方向位移。
Next, the exposure apparatus EX of the third embodiment will be described with reference to FIG. 14. 14 is a perspective view showing the arrangement of main parts of an exposure apparatus according to a third embodiment. In addition, the third embodiment is also the same
In order to avoid duplication of descriptions in the first and second embodiments, only the parts that are different from the first and second embodiments are described. For the same constituent elements as those in the first and second embodiments, the first and second The same symbols are used in the second embodiment. In the exposure apparatus EX of the first and second embodiments, the position of the
如圖14所示,旋轉捲筒DR,係於軸方向兩側設有軸(shaft)部Sf2,各軸部Sf2係透過軸承123而能旋轉地軸支於本體框架21。於兩側之軸承123,分別相鄰地設有X移動機構121及Z移動機構122,各X移動機構121及各Z移動機構122能使軸承123往X方向及Z方向移動(微動)。
As shown in FIG. 14, the rotating drum DR is provided with shaft portions Sf2 on both sides in the axial direction. Each shaft portion Sf2 is rotatably supported by the
此處,第3實施形態,係使軸承123發揮第1支承構件之功能,使裝置框架13發揮第2支承構件之功能,使各X移動機構121及各Z移動機構122發揮連結機構之功能。
Here, in the third embodiment, the bearing 123 functions as a first support member, the
兩側之一對X移動機構121,能使兩側之一對軸承123分別往X方向移動,以在XY面內微調旋轉捲筒DR之旋轉中心線AX2之傾斜與X方向位置。此處,旋轉中心線AX2,係與第1實施形態同樣地延伸於Y方向,以延伸於Y方向之旋轉中心線AX2之位置作為基準位置。在XY面內,作為基準位置之旋轉中心線AX2因振動等之影響而從基準位置傾斜既定角度量時,能藉由調整兩側之一對X移動機構121之驅動量修正旋轉捲筒DR在XY面內之傾斜。
The pair of
又,兩側之一對Z移動機構122,能使兩側之一對軸承123
分別往Z方向移動,以在YZ面內微調旋轉捲筒DR之旋轉中心線AX2之傾斜與Z方向位置。此處,旋轉中心線AX2,係與第2實施形態同樣地延伸於Y方向,以延伸於Y方向之旋轉中心線AX2之位置作為基準位置。在YZ面內,作為基準位置之旋轉中心線AX2因振動等之影響而從基準位置傾斜既定角度量時,能藉由調整兩側之一對Z移動機構122之驅動量修正旋轉捲筒DR在YZ面內之傾斜。
Also, one of the two sides of the pair of
一對編碼器讀頭EN1、EN2,能如以第1實施形態說明般,測量第2光學平台25與旋轉捲筒DR(旋轉中心線AX2)在XY面內之相對傾斜誤差。又,第3實施形態亦與第2實施形態同樣地,在將編碼器讀頭EN3、EN4安裝於第2光學平台25(或第1光學平台23)之場合,一對編碼器讀頭EN3、EN4能如以第2實施形態說明般測量第2光學平台25與旋轉捲筒DR(旋轉中心線AX2)在YZ面內之相對傾斜誤差。 The pair of encoder read heads EN1 and EN2 can measure the relative tilt error of the second optical table 25 and the rotating drum DR (rotation center line AX2) in the XY plane as described in the first embodiment. In addition, in the third embodiment, as in the second embodiment, when the encoder heads EN3 and EN4 are mounted on the second optical table 25 (or the first optical table 23), a pair of encoder heads EN3, EN4 can measure the relative tilt error of the second optical table 25 and the rotating drum DR (rotation center line AX2) in the YZ plane as described in the second embodiment.
因此,控制裝置16,係根據一對編碼器讀頭EN1、EN2之各檢測結果(計數值CD1a、CD1b、CD2a、CD2b),求出旋轉捲筒DR與第2光學平台25從既定相對配置關係起之偏移資訊(在XY面內之旋轉中心線AX2之相對傾斜θZ)。進而,控制裝置16,係根據對準顯微鏡AM1、AM2之檢測結果測量基板P上之元件圖案區域之傾斜等,求出X移動機構121之修正旋轉量θ2。控制裝置16,以所求出之修正旋轉量θ2與旋轉中心線AX2之傾斜θZ之偏差減少之方式、也就是維持既定相對配置關係之方式控制兩側之X移動機構121之驅動量。同樣地,控制裝置16,係根據一對編碼器讀頭EN3、EN4之各檢測結果(計數值CD3a、CD3b、CD4a、CD4b),從旋轉捲筒DR與第2光學平台25之既定相對配置關係,求出偏移資訊亦
即在YZ面內之旋轉中心線AX2之傾斜(設為θX),並以所求出之旋轉中心線AX2之傾斜θX減少之方式、也就是維持既定相對配置關係,控制兩側之Z移動機構122之驅動量。
Therefore, the
以上之第3實施形態,能藉由在XY面內以X移動機構121使旋轉捲筒DR相對本體框架21繞與Z軸平行之軸旋轉,且在YZ面內以Z移動機構122使旋轉捲筒DR相對本體框架21繞與X軸平行之軸旋轉,調整旋轉捲筒DR與第2光學平台25之相對配置關係。因此,曝光裝置EX,能將以設置於第2光學平台25之描繪裝置11形成之描繪線LL1~LL5,相對於捲繞於旋轉捲筒DR之基板P修正至適當位置,能對基板P以良好精度曝光元件圖案。
In the third embodiment above, the rotating reel DR can be rotated about the axis parallel to the Z axis with respect to the
〔第4實施形態〕 [Fourth Embodiment]
其次,參照圖15說明第4實施形態之曝光裝置EX。圖15,係顯示第4實施形態之曝光裝置之旋轉捲筒及描繪裝置之構成之圖。此外,第4實施形態亦同樣地,為了避免與第1~第3實施形態重複之記載而僅說明與第1~第3實施形態不同之部分,針對與第1~第3實施形態相同之構成要素,賦予與第1~第3實施形態相同之符號進行說明。第3實施形態之曝光裝置EX,係藉由使軸承123移動之X移動機構121及Z移動機構122來使旋轉捲筒DR之位置位移。第4實施形態之曝光裝置EX,則藉由與裝置框架13分開獨立之捲筒支承框架130來使旋轉捲筒DR之位置位移。
Next, the exposure apparatus EX of the fourth embodiment will be described with reference to FIG. 15. FIG. 15 is a diagram showing the configuration of the rotating reel and the drawing device of the exposure apparatus according to the fourth embodiment. In addition, in the fourth embodiment, in order to avoid duplication of the description of the first to third embodiments, only the parts that are different from the first to third embodiments will be described, and the same configuration as the first to third embodiments will be described. The elements will be described with the same symbols as in the first to third embodiments. The exposure apparatus EX of the third embodiment displaces the position of the rotating reel DR by the
如圖15所示,捲筒支承框架130,從Z方向下方側依序具有捲筒旋轉機構131與捲筒支承構件132。捲筒旋轉機構131,係透過防振單元SU3而設置在設置面E上。捲筒支承構件132設置於捲筒旋轉機構131
上,將旋轉捲筒DR之軸以雙側支承能旋轉地軸支。捲筒旋轉機構131,藉由在XY面內以與Z軸平行之旋轉軸I a(與旋轉中心軸AX2交叉)為中心使捲筒支承構件132旋轉,調整旋轉捲筒DR之旋轉中心線AX2在XY面內之傾斜。
As shown in FIG. 15, the
又,由於將旋轉捲筒DR設於與裝置框架13分開獨立之捲筒支承框架130,因此本實施形態,能省略先前之第1~第3實施形態中之三點座22、第1光學平台23及旋轉機構24,於本體框架21上僅設置第2光學平台25與被其支承之描繪裝置11。此處,第4實施形態,係使捲筒支承框架130發揮第1支承構件之功能,使裝置框架13發揮第2支承構件之功能,使捲筒旋轉機構131發揮連結機構之功能。
In addition, since the rotating reel DR is provided on the
此處,控制裝置16,係根據安裝於第2光學平台25之一對編碼器讀頭EN1、EN2之各檢測結果(計數值CD1a、CD1b、CD2a、CD2b),檢測出相對於往Y方向延伸之基準位置之旋轉中心線AX2之、旋轉捲筒DR(旋轉中心線AX2)與第2光學平台25在XY面內之相對傾斜θZ。進而控制裝置16,係根據對準顯微鏡AM1、AM2之檢測結果測量基板P上之元件圖案區域之傾斜等,求出捲筒旋轉機構131之修正旋轉量θ2。控制裝置16,係以所求出之修正旋轉量θ2與旋轉中心線AX2之傾斜θZ之偏差減少之方式、也就是維持既定相對配置關係之方式控制捲筒旋轉機構131。此外,配置於與對準顯微鏡AM1、AM2設置方位相同方向之一對編碼器讀頭EN3、EN4雖安裝於第2光學平台25,但亦可安裝於捲筒支承構件132側。
Here, the
以上,第4實施形態,由於能藉由以捲筒旋轉機構131使捲筒支承框架130旋轉而使旋轉捲筒DR相對於第2光學平台25旋轉,因此
能修正旋轉捲筒DR與第2光學平台25之相對配置關係。因此,曝光裝置EX,能將捲繞於旋轉捲筒DR之基板P,相對於以設置在第2光學平台25之描繪裝置11形成之描繪線LL1~LL5調整至適當位置,能對基板P以良好精度曝光元件圖案。
As described above, in the fourth embodiment, since the
〔第5實施形態〕 [Fifth Embodiment]
其次,參照圖16說明第5實施形態之曝光裝置EX。圖16係顯示第5實施形態之曝光裝置之編碼器讀頭之配置之俯視圖。此外,第5實施形態亦同樣地,為了避免與第1~第4實施形態重複之記載而僅說明與第1~第4實施形態不同之部分,針對與第1~第4實施形態相同之構成要素,賦予與第1~第4實施形態相同之符號進行說明。第1實施形態之曝光裝置EX,係以一對編碼器讀頭EN1、EN2檢測旋轉捲筒DR之傾斜。第5實施形態中,則藉由一對編碼器讀頭EN1、EN2與一對編碼器讀頭EN5、EN6檢測旋轉捲筒DR之傾斜。 Next, the exposure apparatus EX of the fifth embodiment will be described with reference to FIG. 16. 16 is a plan view showing the arrangement of the encoder read head of the exposure apparatus of the fifth embodiment. In addition, in the fifth embodiment, in order to avoid duplication of the description of the first to fourth embodiments, only the parts that are different from the first to fourth embodiments will be described, and the same configuration as the first to fourth embodiments will be described. The elements will be described with the same symbols as in the first to fourth embodiments. The exposure apparatus EX of the first embodiment detects the tilt of the rotating reel DR with a pair of encoder read heads EN1 and EN2. In the fifth embodiment, the tilt of the rotating drum DR is detected by a pair of encoder read heads EN1, EN2 and a pair of encoder read heads EN5, EN6.
如圖16所示,一對編碼器讀頭EN1、EN2透過安裝構件100安裝於第2光學平台25。又,一對編碼器讀頭EN5、EN6透過安裝構件141安裝於本體框架21。此處,各編碼器讀頭EN1與各編碼器讀頭EN5係在Y方向相隔一定間隙相鄰設置。又,以於Y方向相隣之兩個編碼器讀頭EN1及編碼器讀頭EN5之各個均能檢測各標尺部GPa、GPb之方式,將標尺部GPa、GPb之Y方向寬度設定得較寬。
As shown in FIG. 16, a pair of encoder read heads EN1 and EN2 are mounted on the second optical table 25 through the mounting
此處,由於旋轉捲筒DR安裝於本體框架21,因此控制裝置16,係根據以一對編碼器讀頭EN5、EN6之各個檢測出之旋轉角度位置(對應之計數電路之計數值CD5a、CD5b、CD6a、CD6b),檢測旋轉捲筒DR之
旋轉中心線AX2在XY面內之傾斜θZR,並將所檢測出之傾斜θZR作為基準位置。亦即,藉由在旋轉中心軸AX2之一方側與標尺部GPa對向之編碼器讀頭EN5之計數值CD5a與在旋轉中心軸AX2之另一方側與標尺部GPb對向之編碼器讀頭EN5之計數值CD5b之差分值的變化、或者、與標尺部GPa對向之編碼器讀頭EN6之計數值CD6a與在旋轉中心軸AX2之另一方側與標尺部GPb對向之編碼器讀頭EN6之計數值CD56之差分值的變化,能測量以本體框架21作為基準之旋轉捲筒DR在XY面內之傾斜θZR之變動。
Here, since the rotating drum DR is mounted on the
又,控制裝置16,係與第1實施形態同樣地,根據以一對編碼器讀頭EN1、EN2檢測出之旋轉角度位置(計數值CD1a、CD1b、CD2a、CD2b),求出旋轉捲筒DR與第2光學平台25在XY面內之相對傾斜θZ。因此,基於根據以一對編碼器讀頭EN5、EN6之各個檢測出之旋轉角度位置所測量之傾斜θZR、與根據以一對編碼器讀頭EN1、EN2檢測出之旋轉角度位置所測量之傾斜θZ,藉由旋轉機構24使第2光學平台25旋轉,據以能將第2光學平台25與被其支承之描繪裝置11相對本體框架21(靜止基準)設定成無旋轉誤差。不過,與第1實施形態同樣地,在對應形成於基板P上之元件圖案區域之傾斜誤差的場合,係加上與根據對準顯微鏡AM1、AM2之檢測結果所測量之元件圖案區域之相對傾斜θ2相應之修正量來驅動旋轉機構24。
In addition, the
以上,第5實施形態,能根據以一對編碼器讀頭EN5、EN6檢測出之旋轉位置,檢測出以本體框架21作為基準之旋轉捲筒DR之旋轉中心線AX2在XY面內之傾斜θZR。因此,控制裝置16,能測量旋轉捲筒DR之旋轉中心線AX2之基準位置,藉此,能以良好精度測量旋轉捲筒DR
與第2光學平台25之既定相對配置關係。特別是,於進行對基板P上描繪元件圖案區域之第1層用之圖案之第一次曝光時,即使旋轉捲筒DR相對於作為靜止基準之本體框架21在XY面內傾斜,亦可修正第一次曝光之圖案在基板P上傾斜而被轉印一事。
As described above, in the fifth embodiment, it is possible to detect the inclination θ of the rotation center line AX2 of the rotating drum DR based on the
〔第6實施形態〕 [Sixth Embodiment]
其次,參照圖17說明第6實施形態之曝光裝置EX。圖17係顯示第6實施形態之曝光裝置之標尺圓盤之配置的俯視圖。此外,第6實施形態亦同樣地,為了避免與第1~第5實施形態重複之記載而僅說明與第1~第5實施形態不同之部分,針對與第1~第5實施形態相同之構成要素,賦予與第1~第5實施形態相同之符號進行說明。第1至第5實施形態之曝光裝置EX,係使用形成於旋轉捲筒DR外周面之標尺部GPa、GPb檢測旋轉捲筒DR之旋轉位置。第6實施形態之曝光裝置EX,則係使用安裝於旋轉捲筒DR之高真圓度之標尺圓盤SD檢測旋轉捲筒DR之旋轉位置。 Next, the exposure apparatus EX of the sixth embodiment will be described with reference to FIG. Fig. 17 is a plan view showing the arrangement of the scale disc of the exposure apparatus of the sixth embodiment. In addition, in the sixth embodiment, in order to avoid duplication of descriptions from the first to fifth embodiments, only the parts different from the first to fifth embodiments will be described, and the same configuration as the first to fifth embodiments will be described. The elements will be described with the same symbols as in the first to fifth embodiments. The exposure apparatus EX of the first to fifth embodiments detects the rotational position of the rotating reel DR using the scale parts GPa and GPb formed on the outer peripheral surface of the rotating reel DR. The exposure apparatus EX of the sixth embodiment uses a high-roundness scale disc SD attached to the rotating reel DR to detect the rotating position of the rotating reel DR.
如圖17所示,此標尺圓盤SD,於外周面刻設有標尺部GPa、GPb,且於旋轉捲筒DR端部固定成與旋轉中心線AX2正交。因此,標尺圓盤SD,係繞旋轉中心線AX2而與旋轉捲筒DR一體地旋轉。又,標尺圓盤SD,係以低熱膨張之金屬、玻璃、陶瓷等作為母材,為了提高測量分解能力,盡可能作成較大之直徑(例如直徑20cm以上)。圖17中,雖將標尺圓盤SD外周面之直徑顯示為較感光捲筒DR外周面之直徑小,但能藉由將標尺圓盤SD之標尺部GP之直徑,設成與捲繞於旋轉捲筒DR之基板P之外周面之直徑一致(大致一致),而能更加縮小所謂之測量阿貝誤差。 As shown in FIG. 17, this scale disc SD has scale portions GPa and GPb engraved on the outer peripheral surface, and is fixed at the end of the rotating drum DR to be orthogonal to the rotation center line AX2. Therefore, the scale disc SD rotates integrally with the rotating drum DR around the rotation center line AX2. In addition, the scale disc SD uses low thermal expansion metal, glass, ceramics, etc. as a base material. In order to improve the measurement decomposition ability, the diameter should be as large as possible (for example, a diameter of 20 cm or more). In FIG. 17, although the diameter of the outer peripheral surface of the scale disc SD is shown to be smaller than the diameter of the outer peripheral surface of the photosensitive drum DR, the diameter of the scale portion GP of the scale disc SD can be set and wound to rotate The diameter of the outer peripheral surface of the substrate P of the reel DR is the same (approximately the same), and the so-called measurement Abbe error can be further reduced.
以上,第6實施形態,由於能將不同個體之標尺圓盤SD安 裝於旋轉捲筒DR,因此能選擇適於旋轉捲筒DR之標尺圓盤SD。又,作為標尺圓盤SD,由於能利用於周方向之複數處搭載有能微調真圓度之機構(按壓螺絲等)者,因此能更加縮小標尺部GP之自旋轉中心軸AX2起之偏心誤差或標尺(繞射格子)之節距誤差等所導致之測量誤差(累積誤差)。 As described above, in the sixth embodiment, since the scale disc SD of different individuals can be installed It is mounted on the rotating reel DR, so the scale disc SD suitable for the rotating reel DR can be selected. In addition, as the scale disc SD, a mechanism capable of finely adjusting the roundness (compression screws, etc.) can be used at a plurality of places in the circumferential direction, so that the eccentricity error of the scale part GP from the rotation center axis AX2 can be further reduced Or the measurement error (cumulative error) caused by the pitch error of the scale (diffraction grid).
此外,第1至第6實施形態,雖係使用掃描點光之描繪裝置11而於基板P形成有圖案,但不限定於此構成,只要係於基板P形成圖案之裝置即可,例如,亦可係使用透射型或反射型之平坦或圓筒狀之光罩將來自光罩之投影光束投影曝光於基板P,以於基板P形成圖案之投影曝光系。進而,亦可係取代光罩而藉由將能傾斜之多數個微鏡排列成矩陣狀之數位微鏡元件(DMD),而將與待描繪圖案對應之光分布投影於基板P之無光罩方式之曝光裝置。又,作為於基板P形成圖案之裝置,例如亦可係使用吐出墨水等液滴之噴射頭於基板P形成圖案之噴墨方式之描繪裝置。此種無光罩方式之曝光機或噴墨方式之描繪裝置之場合亦可如例如日本特開2010-091990號公報所揭示般,作為將與以DMD作成之圖案對應之光分布投影至基板P之曝光部(圖案形成部)之複數個排列於基板P寬度方向的構成,或將具備噴墨方式之墨水噴嘴之液滴塗布部(圖案形成部)之複數個排列於基板P寬度方向的構成,採取使複數個曝光部整體或複數個液滴塗布部整體能相對基板P在XY面內相對旋轉的構成。
In addition, although the first to sixth embodiments use the scanning spot
又,第1至第6實施形態中,雖係藉由旋轉機構24,在XY面內使將構成描繪裝置11之複數個描繪模組UW1~UW5固定之第2光學平台25旋轉的構成,但為了將描繪線LL1~LL5之各條線在XY面內平行地調整或在XY面內使之具有既定傾斜地調整,亦可設置能將描繪模組UW1
~UW5之各個在第2光學平台25上於XY面內個別地微幅旋轉之致動器(第2旋轉機構、驅動機構)。此情形下,可設置用以測量描繪模組UW1~UW5(圖案形成部)各個相對於第2光學平台25之旋轉角度位置(傾斜量等)的個別角度測量感測器,能根據以一對編碼器讀頭EN1或EN2等測量之第2光學平台25在XY面內之傾斜量與以個別角度測量感測器(第2檢測裝置)測量之描繪模組UW1~UW5各個之傾斜量之兩者,調整描繪線LL1~LL5各個在基板P上之傾斜。因此,在使旋轉捲筒DR旋轉以將基板P以一定速度搬送於長條方向(X方向)搬送的期間,即使產生基板P在旋轉捲筒DR上往Y方向些微位移之蛇行現象,而伴隨於此使基板P之搬送方向些微傾斜時,由於亦可藉由對準顯微鏡AM1(或AM2)對對準標記Ks1~Ks3之位置檢測逐次測量該傾斜,因此能以配合該傾斜使描繪線LL1~LL5分別傾斜之方式控制描繪模組UW1~UW5各自之致動器(驅動機構)。藉此,即使在對已形成於基板P上之曝光區域A7之電子元件用基底圖案(例如第1層圖案)疊合新的圖案時,於基板P之搬送中產生蛇行之情形,亦能在基板P上之曝光區域A7全面良好地維持疊合精度。
Further, in the first to sixth embodiments, the second optical table 25 that fixes the plurality of drawing modules UW1 to UW5 constituting the
再者,第1至第6實施形態中,設有包含使支承描繪裝置11之第2光學平台25與支承旋轉捲筒DR之本體框架21在XY面內(或YZ面內)相對地微幅旋轉之馬達等的驅動機構(旋轉機構24、三點座22之驅動部110、X移動機構121、Z移動機構122)。然而,亦可非為馬達等之電動操作,而係藉由調整螺絲、微壓計、厚度不同之墊圈之替換等手動操作,以將描繪裝置11與旋轉捲筒DR之空間上配置關係相對地微調之方式連結第2光學平台25與本體框架21的連結機構。具有此種手動操作之調
整部之連結機構,例如在裝置之組裝時或保養檢查時,將搭載有描繪裝置11之第2光學平台25(第1光學平台23)從本體框架21卸除並再度透過三點座22安裝於本體框架21的場合等,於微調三點座22各自在XYZ方向之位置時係為有用。
Furthermore , in the first to sixth embodiments, the second optical table 25 supporting the
<元件製造方法> <Component manufacturing method>
其次,參照圖18說明元件製造方法。圖18係顯示各實施形態之元件製造方法的流程圖。 Next, the element manufacturing method will be described with reference to FIG. 18. Fig. 18 is a flowchart showing a method of manufacturing a device in each embodiment.
圖18所示之元件製造方法,首先,係進行例如使用有機EL等自發光元件形成之顯示面板之功能、性能設計,以CAD等設計所需之電路圖案及配線圖案(步驟S201)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)之供應用捲筒(步驟S202)。此外,於此步驟S202中準備之捲筒狀基板P,可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者。 The device manufacturing method shown in FIG. 18 first performs function and performance design of a display panel formed using self-luminous elements such as organic EL, and designs circuit patterns and wiring patterns required by CAD or the like (step S201). And prepare a roll for supplying the flexible substrate P (resin film, metal foil film, plastic, etc.) as the base material of the display panel (step S202). In addition, the roll-shaped substrate P prepared in this step S202 may be the one whose surface has been modified as necessary, or the bottom layer has been formed in advance (for example, micro unevenness by imprint), or the light is pre-stacked Inductive functional film or transparent film (insulating material).
接著,於基板P上形成構成顯示面板元件之以電極或配線、絶緣膜、TFT(薄膜半導體)等構成之底板層,並以積層於該底板之方式形成以有機EL等自發光元件構成之發光層(顯示像素部)(步驟S203)。於此步驟S203中,亦包含使用於先前各實施形態說明之曝光裝置EX,對光阻劑層進行曝光的習知微影製程、對取代光阻劑而塗有感光性矽烷耦合劑之基板P進行圖案曝光以於表面形成親撥水性之圖案的曝光製程、對光感應性之觸媒層進行圖案曝光以藉由無電解鍍敷法形成金屬膜圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷 製程等之處理。 Next, a substrate layer composed of electrodes or wiring, an insulating film, a TFT (thin film semiconductor), etc. constituting a display panel element is formed on the substrate P, and light emission composed of self-luminous elements such as organic EL is formed by being laminated on the substrate Layer (display pixel portion) (step S203). In this step S203, it also includes the conventional lithography process for exposing the photoresist layer using the exposure device EX described in the previous embodiments, and the substrate P coated with a photosensitive silane coupling agent instead of the photoresist Wet process of pattern exposure to form a water-repellent pattern on the surface, pattern exposure of the photosensitive catalyst layer to form metal film patterns (wiring, electrodes, etc.) by electroless plating, Or printing patterns with conductive ink containing silver nanoparticles Processing, etc.
接著,針對以捲筒方式於長條基板P上連續製造之每一顯示面板元件切割基板P、或於各顯示面板元件表面貼合保護膜(耐環境障壁層)或彩色濾光片膜等,組裝元件(步驟S204)。接著,進行顯示面板元件是否可正常作動、或是否滿足所欲性能及特性之檢查步驟(步驟S205)。經由以上方式,即能製造顯示面板(可撓性顯示器)。又,除了如圖18之顯示面板之製造以外,在將精密配線圖案(高密度配線)為必要之可撓性印刷基板、具有TFT等半導體元件與感測用電極圖案之化學感測器片、或者DNA晶片等製造於可撓性基板P上時,亦能使用上述各實施形態之曝光裝置。 Next, for each display panel element that is continuously manufactured on the long substrate P in a roll, the substrate P is cut, or a protective film (environmental barrier layer) or color filter film is attached to the surface of each display panel element. Assemble the component (step S204). Next, a check step is performed whether the display panel element can operate normally, or whether it satisfies the desired performance and characteristics (step S205). Through the above method, a display panel (flexible display) can be manufactured. In addition to the manufacture of display panels as shown in FIG. 18, flexible printed circuit boards that require precision wiring patterns (high-density wiring), chemical sensor sheets with semiconductor elements such as TFTs and electrode patterns for sensing, Alternatively, when a DNA wafer or the like is manufactured on the flexible substrate P, the exposure apparatus of each embodiment described above can also be used.
11:描繪裝置 11: Painting device
13:裝置框架 13: Device frame
21:本體框架 21: Ontology framework
22:三點座 22: three o'clock
22a:支承點 22a: Support point
23:第1光學平台 23: The first optical platform
24:旋轉機構 24: Rotating mechanism
25:第2光學平台 25: 2nd optical platform
AX2:旋轉中心線 AX2: rotation centerline
DR:旋轉捲筒 DR: rotating reel
EX:曝光裝置 EX: Exposure device
I:旋轉軸 I: rotary axis
P:基板 P: substrate
RT2:張力調整滾筒 RT2: tension adjustment roller
Sf2:軸部 Sf2: Shaft
UW1~UW5:描繪模組 UW1~UW5: drawing module
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