JP2014081452A - Exposure apparatus and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To position, in high precision, a mask rotated around a first axis and a drum rotated around a second axis.SOLUTION: Multiple first standard marks are configured on both sides of a pattern region on the outer circumferential plane of a mask along the circumferential direction thereof, whereas multiple second standard marks are configured on the outer circumferential plane of a drum along the circumferential direction thereof in correspondence respectively to the multiple first standard marks. The provided apparatus includes an illumination system for forming, via exposure beams, an illuminated region on the outer circumferential plane of the mask, a projection optical system for forming, within an image formation region atop an inductive substrate, an image of a pattern within the illuminated region, and a first detection system for detecting both images of first standard marks formed via the projection optical system after beams emitted from the first standard marks illuminated by the illumination system have been reflected, via the projection optical system, by the outer circumferential plane of the drum and images of second standard marks formed via the projection optical system by beams emitted from the second standard marks illuminated, via the projection optical system, by the illumination system.

Description

  The present invention relates to an exposure apparatus and a device manufacturing method. More specifically, the present invention relates to an exposure apparatus that scans and exposes a pattern on, for example, a flexible sensitive substrate that moves in one direction.

  Conventionally, a method of manufacturing a display element (electronic device) such as an organic EL element or a liquid crystal display element by patterning a transparent thin film electrode on a flexible polymer sheet by a photolithography technique has been devised. As an exposure apparatus used in this photolithography process, an exposure apparatus that transfers a mask pattern onto a strip-like flexible sensitive substrate (photosensitive sheet substrate) conveyed by roll-to-roll (Roll to Roll). Hereinafter, a roll-to-roll type exposure apparatus) has been proposed (see, for example, Patent Document 1).

  In the exposure apparatus described in Patent Document 1, a pattern provided on the outer peripheral surface of a cylindrical mask that rotates about an axis line is applied to an exposure region on a sensitive substrate that is transported in the circumferential direction along the cylindrical surface. It is exposed.

JP 2011-221536 A

  As a roll-to-roll type exposure apparatus, for example, a pattern provided in a pattern area on the outer peripheral surface of a columnar (or cylindrical) mask that rotates around a first axis is used as a drum that rotates around a second axis. A configuration is conceivable in which scanning exposure is performed on an exposure region on a flexible sensitive substrate that is wound around a part and moves in one direction. In this case, in order to superimpose the pattern with high accuracy in the exposure area on the sensitive substrate, it is required to align the mask rotating around the first axis and the drum rotating around the second axis with high accuracy. .

  The present invention has been made in view of the above-described problems, and an exposure apparatus and device capable of highly accurately aligning a mask rotating around a first axis and a drum rotating around a second axis. An object is to provide a manufacturing method.

In order to solve the above-described problem, in the first embodiment, a pattern provided in a pattern region on the outer peripheral surface of a columnar or cylindrical mask that rotates around the first axis is used as a drum that rotates around the second axis. An exposure apparatus that scans and exposes an exposure area on a flexible sensitive substrate that is wound around a part and moves in one direction,
A plurality of first reference marks are provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask,
On the outer peripheral surface of the drum, a plurality of second reference marks are provided along the circumferential direction so as to correspond to the plurality of first reference marks,
An illumination system for forming an illumination area on the outer peripheral surface of the mask by exposure light;
A projection optical system for forming an image of a pattern in the illumination area on an imaging area on the sensitive substrate;
An image of the first fiducial mark formed via the projection optical system after light from the first fiducial mark illuminated by the illumination system is reflected by the outer peripheral surface of the drum via the projection optical system; A first detection system that detects both the image of the second reference mark formed by the light from the second reference mark illuminated by the illumination system via the projection optical system and the projection optical system; An exposure apparatus is provided.

In the second mode, the pattern provided in the pattern area on the outer peripheral surface of the columnar or cylindrical mask rotating around the first axis is supported by the cylindrical or planar support surface of the support member. An exposure apparatus that scans and exposes an exposure area on a flexible sensitive substrate that moves in a longitudinal direction,
A plurality of first alignment marks are provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask,
Outside the exposure area on the sensitive substrate, a plurality of second alignment marks are formed along the longitudinal direction of the sensitive substrate so as to correspond to the plurality of first alignment marks,
An illumination system for forming an illumination area on the outer peripheral surface of the mask by exposure light;
A projection optical system for forming an image of a pattern in the illumination area on an imaging area on the sensitive substrate;
An image of the first alignment mark formed via the projection optical system after light from the first alignment mark illuminated by the illumination system is reflected by the sensitive substrate via the projection optical system; A second detection system for detecting together the image of the second alignment mark formed by the light from the second alignment mark illuminated via the projection optical system by the illumination system via the projection optical system; An exposure apparatus is provided.

In the third mode, using the exposure apparatus of the first mode or the second mode, exposing a predetermined pattern on the substrate;
Developing the substrate to which the predetermined pattern is transferred, and forming a mask layer having a shape corresponding to the predetermined pattern on the surface of the substrate;
And processing the surface of the substrate through the mask layer. A device manufacturing method is provided.

  According to one aspect of the present invention, the mask rotating around the first axis and the drum rotating around the second axis can be aligned with high precision, and as a result, wound around a part of the drum and applied in one direction. The pattern can be superimposed with high accuracy in the exposure area on the flexible sensitive substrate that moves to the right.

It is a figure which shows schematically the structure of the exposure apparatus concerning embodiment of this invention. It is a figure which expand | deploys and shows the outer peripheral surface of a mask in planar shape. It is a figure which expand | deploys and shows the outer peripheral surface and sheet | seat board | substrate of a drum in planar shape. It is a figure which shows arrangement | positioning of the some detection system which detects the image of a mark via a projection optical system. It is a figure which shows schematically the internal structure of each detection system of FIG. It is a figure which shows a mode that the drum reference mark image of a mask reference mark is formed in the detection visual field of a detection system. It is a figure which shows schematically the structure provided with the some projection optical unit arrange | positioned in parallel. It is a figure explaining the structural example for detecting the reflected image of a sheet alignment mark with sufficient contrast. It is a figure which shows roughly the modification of the detection system which detects the reflected image of a sheet alignment mark using non-exposure light. It is a figure which shows roughly the modification of the detection system which takes out and monitors a part of incident light from the illumination system without passing through a projection optical system. It is a flowchart which shows the manufacturing process of a semiconductor device. It is a flowchart which shows the manufacturing process of a liquid crystal device.

  Hereinafter, embodiments will be described with reference to the accompanying drawings. FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the Z axis in the vertical direction on the paper surface, that is, the optical axis AX1 on the incident side (mask M side) and the optical axis AX2 on the emission side (drum RL side) of the projection optical system PL, The X axis is set in the horizontal direction, and the Y axis is set in the direction perpendicular to the paper surface of FIG.

  The exposure apparatus of the present embodiment includes a columnar (or cylindrical) reflective mask M that rotates counterclockwise in the XZ plane in FIG. 1 about an axis Ma along the Y direction, and a light source LS. An illumination system IL that forms an illumination area on the outer peripheral surface of the mask M with light from the projection optical system PL that forms an image of the pattern of the mask M on a sheet substrate SH that is a strip-like flexible sensitive substrate; A cylindrical (or cylindrical) drum (roller) RL that rotates clockwise around the axis RLa along the Y direction while holding the sheet substrate SH, and a mask M around the central axis Ma. A first drive system DR1 for rotational drive, a second drive system DR2 for rotationally driving the drum RL around the central axis line RLa, and a control system CR for comprehensively controlling the operation of the drive systems DR1, DR2, etc. .

  The sheet substrate SH is a flexible (flexible) band-shaped polymer sheet coated with a photoresist (photosensitive material). The sheet substrate SH is held in contact with the cylindrical surface that is the outer peripheral surface of the drum RL so as not to slide along the cylindrical surface. As a result, the sheet substrate SH moves in the circumferential direction of the cylindrical surface with the rotation of the drum RL around the axis RLa. In other words, the sheet substrate SH is wound around a part of the drum RL that rotates around the axis RLa and moves in one direction.

  Illumination light (exposure light) for exposure is supplied from the light source LS to the illumination system IL. As exposure light, for example, light of i-line (wavelength 365 nm) selected from light emitted from an ultra-high pressure mercury lamp, pulsed light composed of third harmonic of YAG laser (wavelength 355 nm), KrF excimer laser light (wavelength 248 nm) Etc. can be used. The illumination system IL includes a plurality of lenses, a polarizer for generating s-polarized light, and the like, and emits s-polarized illumination light generated from the light supplied from the light source LS along the X direction.

  The s-polarized illumination light emitted from the illumination system IL along the X direction is reflected in the Z direction by the polarization beam splitter PBS disposed on the optical axis AX1 on the incident side of the projection optical system PL, and is ¼ wavelength. From the s-polarized light to the circularly-polarized light through the plate WC, a strip-shaped illumination region IR extending in the Y direction on the outer peripheral surface of the mask M is formed. That is, the illumination region IR has a surface shape along a cylindrical surface that is the outer peripheral surface of the mask M. A pattern to be transferred to the sheet substrate SH, that is, a pattern for an electronic device such as an organic EL element or a liquid crystal display element is provided on the outer peripheral surface of the mask M having a columnar (or cylindrical) form. The transfer pattern provided on the outer peripheral surface of the mask M is a pattern formed of, for example, a multilayer film and including a high reflection portion and a low reflection portion.

  FIG. 2 is a diagram showing the outer peripheral surface of the mask M developed in a planar shape along the XY plane. As shown in FIG. 2, the illumination region IR viewed from the Z direction has a rectangular outer shape having long sides along the Y direction and short sides along the X direction. On the outer peripheral surface of the mask M, a plurality of mask reference marks 11 and 12 are provided along the circumferential direction (horizontal direction in FIG. 2) on both sides of the pattern area PA where the pattern is provided. In FIG. 2, as a simple example, five mask reference marks 11 are provided at intervals on the + Y direction side of the pattern area PA, and five mask reference marks 12 are spaced on the −Y direction side of the pattern area PA. Is provided.

  On the outer peripheral surface of the mask M, a plurality of mask alignment marks 13 are provided along the circumferential direction between the pattern area PA and the group of mask reference marks 11, and the pattern area PA and the group of mask reference marks 12. A plurality of mask alignment marks 14 are provided along the circumferential direction. In FIG. 2, as a simple example, five mask alignment marks 13 are provided at intervals on the + Y direction side of the pattern area PA, and mask alignment marks 14 are provided at intervals on the −Y direction side of the pattern area PA. It has been.

  Further, on the outer peripheral surface of the mask M, a first group of mask alignment marks 15 and a second group of mask alignment marks 16 are provided outside the pattern area PA along the direction of the central axis Ma, that is, the Y direction. . In FIG. 2, as a simple example, three mask alignment marks 16 are provided at intervals along the Y direction, and between the second group of mask alignment marks 16 and the pattern area PA, along the Y direction. Three mask alignment marks 15 are provided.

  As shown in FIG. 2, the strip-shaped illumination region IR along the Y direction is formed so as to illuminate the mask reference marks 11 and 12 around the optical axis AX1, for example. As the marks 11 to 16 provided on the outer peripheral surface of the mask M, when the outer peripheral surface is specular, engraved phase marks (uneven patterns) or the like can be used. Alternatively, as the marks 11 to 16, an embedded bright / dark mark (such as a Cr pattern) or a phase mark made of a glass substrate can be used. Various forms of the marks 11 to 16 provided on the outer peripheral surface of the mask M are possible.

  Of the patterns in the pattern area PA, the reflected light from the pattern illuminated by the illumination area IR changes from circularly polarized light to p-polarized light through the quarter-wave plate WC, and passes through the polarizing beam splitter PBS, for example, twice. The light enters a projection optical system PL configured as an imaging type catadioptric optical system. The projection optical system PL forms a projected image of the pattern in the illumination area IR in the imaging area ER on the sheet substrate SH. The imaging region ER is a region optically corresponding to the illumination region IR, and has a surface shape along the cylindrical surface that is the outer peripheral surface of the columnar (or cylindrical) drum RL, like the illumination region IR. Have.

  Various forms of the specific configuration of the projection optical system PL are possible. For example, as disclosed in Japanese Patent Laid-Open No. 2001-215718, there is a configuration in which a pattern is scanned and exposed on a photosensitive substrate using a projection optical system including a plurality of projection optical units arranged along a predetermined direction. Is possible. In the case of the present embodiment, a plurality of projection optical units can be arranged along the direction intersecting the moving direction of the sheet substrate SH, that is, the direction of the central axis RLa of the drum RL. However, in the following description, it is assumed that the pattern of the mask M is scanned and exposed on the sheet substrate SH via the single projection optical system PL.

  FIG. 3 is a diagram showing the outer peripheral surface of the drum RL and the sheet substrate SH developed in a plane along the XY plane. As shown in FIG. 3, on the sheet substrate SH and the outer peripheral surface of the drum RL that are wound around a part of the drum RL that rotates around the axis RLa and moves in one direction, for example, on the exit side of the projection optical system PL An imaging region ER extending in a band shape along the Y direction around the optical axis AX2 is formed. The projection optical system PL forms a projected image of a pattern in the illumination area IR and an image of the mask alignment marks 13 to 16 in the illumination area IR in the imaging area ER on the sheet substrate SH, and is on the outer peripheral surface of the drum RL. Images of the mask reference marks 11 and 12 in the illumination area IR are formed in the imaging area ER.

  By synchronizing the rotation of the mask M and the movement of the sheet substrate SH in accordance with the projection magnification of the projection optical system PL, an exposure region SR having a width corresponding to the dimension in the Y direction of the pattern region PA is formed on the sheet substrate SH. The mask pattern is scanned and exposed. Specifically, when the mask M makes one rotation around the central axis Ma, the first exposure region SR1 on the sheet substrate SH that moves in the circumferential direction along the outer peripheral surface of the drum RL is included in the pattern region PA of the mask M. The pattern is transferred by scanning exposure.

  Next, when the mask M makes another rotation around the central axis Ma, the longitudinal direction (longitudinal direction) of the sheet substrate SH from the first exposure region SR1 on the sheet substrate SH that moves in the circumferential direction along the outer peripheral surface of the drum RL. The pattern in the pattern area PA is also transferred by the scanning exposure to the second exposure area SR2 which is spaced from each other. That is, in accordance with a command from the control system CR, the rotation of the mask M around the central axis Ma by the first drive system DR1 and the movement of the sheet substrate SH along the cylindrical surface by the second drive system DR2 are synchronized, thereby On the sheet substrate SH that moves in the circumferential direction along the outer peripheral surface of the RL, a plurality of exposure regions SR to which the patterns in the pattern region PA are transferred are sequentially spaced apart in the longitudinal direction of the sheet substrate SH. It is formed.

  On the outer peripheral surface of the mask M, a plurality of pattern regions can be provided at intervals along the circumferential direction. In this case, each time the mask M is rotated by a predetermined angle around the central axis Ma, the pattern in each pattern area is transferred to each exposure area by scanning exposure. However, in the following description, a single pattern area PA is provided on the outer peripheral surface of the mask M, and each time the mask M rotates once around the central axis Ma, the pattern in the pattern area PA scans each exposure area SR. It shall be transferred by exposure.

  Referring to FIG. 3, a plurality of drum reference marks 21, 22 are arranged along the circumferential direction (horizontal direction in FIG. 3) on the outer peripheral surface of the drum RL so as to correspond to the plurality of mask reference marks 11, 12. It is provided at intervals. In addition, for example, after the previous exposure process, a plurality of sheet alignment marks 23 and 24 are formed outside the exposure regions SR1 and SR2 on the sheet substrate SH so as to correspond to the mask alignment marks 13 and 14, respectively. Are formed at intervals along the longitudinal direction. Furthermore, a plurality of sheet alignment marks are provided between the pair of adjacent exposure regions SR1 and SR2 on the sheet substrate SH so as to correspond to the plurality of mask alignment marks 15 and 16 through the previous exposure process, for example. 25 and 26 are formed at intervals along the width direction (Y direction) of the sheet substrate SH.

  As the drum reference marks 21 and 22 provided on the outer peripheral surface of the drum RL, when the outer peripheral surface is a mirror surface, an engraved phase mark (uneven pattern) or the like can be used. Alternatively, as the drum reference marks 21 and 22, embedded bright and dark marks (Cr pattern or the like) made of glass substrates or phase marks can be used. On the other hand, as the sheet alignment marks 23 to 26 formed on the sheet substrate SH, for example, a highly reflective pattern covered with a metal thin film such as aluminum can be used. Various forms are possible for the form, number, and arrangement of the drum reference marks 21 and 22 provided on the outer peripheral surface of the drum RL and the sheet alignment marks 23 to 26 formed on the sheet substrate SH.

  Referring to FIG. 1 again, the exposure apparatus of the present embodiment includes detection systems 31 and 32 that detect both the images of the mask reference marks 11 and 12 and the images of the drum reference marks 21 and 22 via the projection optical system PL. I have. Further, detection systems 33 and 34 for detecting both the images of the mask alignment marks 13 and 14 and the images of the sheet alignment marks 23 and 24 via the projection optical system PL are provided. Furthermore, detection systems 30a, 30b, and 30c that detect both the images of the mask alignment marks 15 and 16 and the images of the sheet alignment marks 25 and 26 through the projection optical system PL are provided.

  As shown in FIG. 4, the detection systems 31 to 34 and 30 a to 30 c are arranged side by side in the Y direction according to the Y direction position of the detection target mark. That is, the detection systems 31 and 32 are arranged on the outermost side according to the Y-direction positions of the mask reference marks 11 and 12 and the drum reference marks 21 and 22. The detection systems 33 and 34 are arranged inside the detection systems 31 and 32 according to the Y-direction positions of the mask alignment marks 13 and 14 and the sheet alignment marks 23 and 24. The detection systems 30a, 30b, and 30c are arranged side by side between the detection systems 33 and 34 in accordance with the three Y-direction positions of the mask alignment marks 15 and 16 and the sheet alignment marks 25 and 26.

  The exposure apparatus according to the present embodiment is disposed in front of the imaging region ER along the moving direction of the sheet substrate SH, and is formed between a pair of adjacent exposure regions SR1 and SR2 on the sheet substrate SH. The three optical microscopes 35a, 35b, and 35c are arranged so as to correspond to the three sheet alignment marks 25. Further, three sheet alignment marks 26 that are arranged in front of the imaging region ER along the moving direction of the sheet substrate SH and are formed between a pair of adjacent exposure regions SR1 and SR2 on the sheet substrate SH. Three optical microscopes 36a, 36b, 36c arranged in correspondence are provided.

  The optical microscopes 35a to 35c and 36a to 36c illuminate the sheet alignment marks 25 and 26 using non-exposure light to which the sheet substrate SH is not sensitive according to a known configuration, and from the illuminated sheet alignment marks 25 and 26, respectively. Images of the sheet alignment marks 25 and 26 formed by light are detected. The detection results of the optical microscopes 35a to 35c and 36a to 36c are supplied to the control system CR.

  Hereinafter, in order to simplify the description, it is assumed that the detection systems 31 to 34, 30a to 30c have the same internal configuration. Specifically, as shown in FIG. 5, the detection systems 31 to 34, 30 a to 30 c include a ¼ wavelength plate 41 provided in the optical path between the polarization beam splitter PBS and the projection optical system PL. . Further, the detection systems 31 to 34, 30a to 30c include a first relay lens 42, an s-polarized transmission polarizer 43, an aperture stop 44, a first aperture lens in the order of light incident along the X direction from the polarization beam splitter PBS side. 2 includes a relay lens 45 and a photoelectric converter 46. As the photoelectric converter 46, for example, a CCD type or CMOS type two-dimensional imaging element can be used.

  As described above, the exposure light supplied from the illumination system IL illuminates the illumination region IR including the mask reference marks 11 and 12 via the polarization beam splitter PBS and the quarter wavelength plate WC. Illuminated light from the mask reference marks 11 and 12 and the vicinity thereof changes from circularly polarized light to p-polarized light through the quarter-wave plate WC, passes through the polarization beam splitter PBS, and is ¼ of the detection systems 31 and 32. The light enters the wave plate 41. The light that has been changed from p-polarized light to circularly-polarized light through the quarter-wave plate 41 passes through the projection optical system PL, on the outer peripheral surface of the drum RL, in the vicinity of the drum reference marks 21, 22. An image is formed and the drum reference marks 21 and 22 are illuminated.

  The images of the mask reference marks 11 and 12 and the light from the drum reference marks 21 and 22 are incident on the quarter wavelength plate 41 of the detection systems 31 and 32 through the projection optical system PL. The light that has been changed from circularly polarized light to s-polarized light through the quarter-wave plate 41 is reflected by the polarization beam splitter PBS, and the first relay lens 42 of the detection systems 31 and 32, the s-polarized transmission polarizer 43, the aperture stop 44, The light reaches the photoelectric converter 46 via the second relay lens 45. Thus, as shown in FIG. 6, the image 11 a (12 a) of the mask reference mark 11 (12) and the drum reference mark 21 are included in the detection visual field 31 a (32 a) of the photoelectric converter 46 of the detection system 31 (32). An image 21a (22a) of (22) is formed.

  In the detection systems 31 and 32, the s-polarized transmission polarizer 43 transmits the s-polarized detection light incident via the projection optical system PL, the quarter-wave plate 41, and the polarization beam splitter PBS, and for example from the illumination system IL. The p-polarized harmful light incident through the polarization beam splitter PBS is blocked without passing through the projection optical system PL. The aperture stop 44 has, for example, an annular opening (light transmission portion), and is supplied from the illumination system IL through the polarization beam splitter PBS without passing through the projection optical system PL, that is, from the illumination system IL. It functions as a shielding member that blocks the 0th-order light. Therefore, even if the installation of the s-polarized light transmission polarizer 43 is omitted and only the aperture stop 44 is installed, harmful light incident from the illumination system IL without passing through the projection optical system PL can be blocked.

  As described above, the detection systems 31 and 32 use the projection optical system PL after the light from the mask reference marks 11 and 12 illuminated by the illumination system IL is reflected by the outer peripheral surface of the drum RL via the projection optical system PL. The light from the drum reference marks 21 and 22 illuminated through the projection optical system PL by the illumination system IL and the images 11a and 12a of the mask reference marks 11 and 12 formed through the projection optical system PL are formed. Both the images 21a and 22a of the drum reference marks 21 and 22 are detected in the detection visual fields 31a and 32a.

  Similarly, the exposure light supplied from the illumination system IL illuminates the illumination region IR including the mask alignment marks 13 and 14 via the polarization beam splitter PBS and the quarter wavelength plate WC. Illuminated light from the mask alignment marks 13 and 14 and the vicinity thereof changes from circularly polarized light to p-polarized light through the quarter-wave plate WC, passes through the polarization beam splitter PBS, and is 1/4 of the detection systems 33 and 34. The light enters the wave plate 41. Light that has changed from p-polarized light to circularly-polarized light through the quarter-wave plate 41 forms an image of the mask alignment marks 13 and 14 in the vicinity of the sheet alignment marks 23 and 24 on the sheet substrate SH via the projection optical system PL. At the same time, the sheet alignment marks 23 and 24 are illuminated.

  The images of the mask alignment marks 13 and 14 and the light from the sheet alignment marks 23 and 24 enter the quarter wavelength plate 41 of the detection systems 33 and 34 through the projection optical system PL. The light that has been changed from circularly polarized light to s-polarized light through the quarter-wave plate 41 is reflected by the polarization beam splitter PBS, the first relay lens 42 of the detection systems 33 and 34, the s-polarized transmission polarizer 43, the aperture stop 44, The light reaches the photoelectric converter 46 via the second relay lens 45. Thus, although not shown, within the detection field of the photoelectric converter 46 of the detection systems 33 and 34, the images 13a and 14a of the mask alignment marks 13 and 14, and the images 23a and 24a of the sheet alignment marks 23 and 24, Is formed.

  As described above, the detection systems 33 and 34 are configured to pass the light from the mask alignment marks 13 and 14 illuminated by the illumination system IL through the projection optical system PL after being reflected by the sheet substrate SH through the projection optical system PL. Sheet alignment formed by the images 13a and 14a of the mask alignment marks 13 and 14 to be formed and the light from the sheet alignment marks 23 and 24 illuminated by the illumination system IL via the projection optical system PL via the projection optical system PL Both the images 23a and 24a of the marks 23 and 24 are detected.

  Further, the exposure light supplied from the illumination system IL illuminates the illumination region IR including the mask alignment marks 15 and 16 via the polarization beam splitter PBS and the quarter wavelength plate WC. Illuminated light from the mask alignment marks 15 and 16 and the vicinity thereof changes from circularly polarized light to p-polarized light through the quarter-wave plate WC, passes through the polarizing beam splitter PBS, and is 1/4 of the detection systems 30a to 30c. The light enters the wave plate 41. The light that has changed from p-polarized light to circularly-polarized light through the quarter-wave plate 41 forms images of the mask alignment marks 15 and 16 in the vicinity of the sheet alignment marks 25 and 26 on the sheet substrate SH via the projection optical system PL. At the same time, the sheet alignment marks 25 and 26 are illuminated.

  The images of the mask alignment marks 15 and 16 and the light from the sheet alignment marks 25 and 26 enter the quarter wavelength plate 41 of the detection systems 30a to 30c via the projection optical system PL. The light that has been changed from circularly polarized light to s-polarized light through the quarter-wave plate 41 is reflected by the polarization beam splitter PBS, the first relay lens 42 of the detection systems 30a to 30c, the s-polarized transmission polarizer 43, the aperture stop 44, The light reaches the photoelectric converter 46 via the second relay lens 45. Thus, although not shown, within the detection field of the photoelectric converter 46 of the detection systems 30a to 30c, the images 15a and 16a of the mask alignment marks 15 and 16 and the images 25a and 26a of the sheet alignment marks 25 and 26 Is formed.

  As described above, the detection systems 30a to 30c are configured such that the light from the mask alignment marks 15 and 16 illuminated by the illumination system IL is reflected by the sheet substrate SH via the projection optical system PL, and then passes through the projection optical system PL. Sheet alignment formed by the images 15a and 16a of the mask alignment marks 15 and 16 to be formed and the light from the sheet alignment marks 25 and 26 illuminated by the illumination system IL via the projection optical system PL via the projection optical system PL Both the images 25a and 26a of the marks 25 and 26 are detected.

  In the exposure apparatus of the present embodiment, prior to scanning exposure on the sheet substrate SH, the relative positional deviation between the mask M rotating around the axis Ma and the drum RL rotating around the axis RLa is measured, and the measurement result Based on the above, alignment of the mask M and the drum RL is performed as necessary. Specifically, when measuring the relative positional deviation between the mask M and the drum RL, the mask M and the detection system 31 and 32 via the quarter wavelength plate 41 and the polarization beam splitter PBS, as in the case of scanning exposure. While synchronously rotating the drum RL, the images 11a and 12a of the mask reference marks 11 and 12 and the images 21a and 22a of the drum reference marks 21 and 22 are detected in the detection visual fields 31a and 32a.

  The control system CR detects the detection results of the detection systems 31 and 32, that is, the relative relationship between the images 11a and 12a of the mask reference marks 11 and 12 detected by the detection systems 31 and 32 and the images 21a and 22a of the drum reference marks 21 and 22. Based on the information on the position, the relative positional deviation of the mask M with respect to the drum RL in the Y direction (direction of the axis Ma), the relative positional deviation of the mask M with respect to the Y axis (around the axis Ma), and the drum RL. The relative displacement of the mask M around the Z axis (around the axis perpendicular to the Y direction through the center of the illumination area IR: around the optical axis AX1) is measured.

  Specifically, for example, along the vertical direction of the image 11a (12a) of the mask reference mark 11 (12) and the image 21a (22a) of the drum reference mark 21 (22) in the detection visual field 31a (32a) of FIG. By comparing the measured interval with a predetermined reference value, the displacement of the relative position along the Y direction of the mask M with respect to the drum RL is measured. Further, by comparing a distance between the image 11a (12a) and the image 21a (22a) in the horizontal direction with a predetermined reference value, a displacement of the relative position of the mask M with respect to the Y axis about the drum RL is measured. . Further, with reference to the relative position along the Y direction of the mask M with respect to the drum RL at a plurality of measurement points, the relative position deviation of the mask M with respect to the drum RL about the Z axis is measured.

  The control system CR adjusts the relative position of the mask M with respect to the drum RL, for example, via the first drive system DR1 that drives the mask M, based on the measurement result of the relative displacement of the mask M with respect to the drum RL. In other words, the control system CR controls the first drive system DR1 based on the detection results of the detection systems 31 and 32, the relative position along the Y direction of the mask M with respect to the drum RL, and the Y axis of the mask M with respect to the drum RL. The relative position around and the relative position around the Z axis of the mask M with respect to the drum RL are adjusted. Thus, the pattern can be superimposed with high accuracy in the exposure region SR on the sheet substrate SH which is a sensitive substrate.

  In the exposure apparatus of the present embodiment, the relative positional deviation between the pattern area PA on the mask M and the exposure area SR on the sheet substrate SH is measured as needed during scanning exposure on the sheet substrate SH, and based on the measurement result. Thus, alignment of the pattern area PA and the exposure area SR and / or adjustment of the pattern image formed to overlap the exposure area SR via the projection optical system PL is performed as necessary. Specifically, when measuring the relative displacement between the pattern area PA and the exposure area SR, the images of the mask alignment marks 13 and 14 via the quarter-wave plate 41 of the detection systems 33 and 34 and the polarization beam splitter PBS. Both the images 13a and 14a and the images 23a and 24a of the sheet alignment marks 23 and 24 are detected.

  The control system CR compares the detection results of the detection systems 33 and 34, that is, the images 13a and 14a of the mask alignment marks 13 and 14 detected by the detection systems 33 and 34 and the images 23a and 24a of the sheet alignment marks 23 and 24. Based on the information about the position, the relative positional deviation along the Y direction of the pattern area PA with respect to the exposure area SR, the relative positional deviation about the Y axis of the pattern area PA with respect to the exposure area SR, and the Z axis of the pattern area PA with respect to the exposure area SR. Measure the relative position shift around.

  Specifically, for example, an interval along the vertical direction between the images 13a and 14a of the mask alignment marks 13 and 14 and the images 23a and 24a of the sheet alignment marks 23 and 24 in the detection field of the detection systems 33 and 34, and a predetermined amount. By comparing the reference value with the reference value, the displacement of the relative position along the Y direction of the pattern area PA with respect to the exposure area SR is measured. Further, by comparing a distance between the images 13a and 14a and the images 23a and 24a in the horizontal direction with a predetermined reference value, a deviation of a relative position around the Y axis of the pattern area PA with respect to the exposure area SR is measured. . Further, with reference to the relative position along the Y direction of the mask M with respect to the exposure region SR at a plurality of measurement points, the relative position shift around the Z axis of the pattern region PA with respect to the exposure region SR is measured.

  The control system CR is based on the measurement results of the detection systems 33 and 34 relating to the relative positional deviation of the pattern area PA with respect to the exposure area SR, for example, via the first drive system DR1 that drives the mask M, for example. The relative position is adjusted, and consequently the relative position of the pattern area PA with respect to the exposure area SR is adjusted. In other words, the control system CR controls the first drive system DR1 based on the detection results of the detection systems 33 and 34, and the relative position along the Y direction of the pattern area PA with respect to the exposure area SR, the pattern area with respect to the exposure area SR. The relative position of the PA around the Y axis and the relative position of the pattern area PA around the Z axis with respect to the exposure area SR are adjusted.

  Further, the control system CR replaces the adjustment of the relative position of the mask M with respect to the drum RL, or in addition to the adjustment of the relative position of the mask M with respect to the drum RL, the projection optical system PL based on the detection results of the detection systems 33 and 34. By performing this optical adjustment, a new pattern can be superimposed and transferred with high accuracy on the pattern already formed in the exposure region SR, and transferred to the exposure region SR via the projection optical system PL. The pattern image formed in an overlapping manner is adjusted. Regarding the adjustment of the optical adjustment of the projection optical system, for example, as disclosed in Japanese Patent Application Laid-Open No. 2001-215718, a mechanism that performs image shift adjustment, image rotation adjustment, magnification adjustment, focus adjustment, and the like is provided in the projection optical system. Reference can be made to the configuration provided.

  For example, as shown in FIG. 7, instead of a single projection optical system PL, a plurality (three in the example shown in FIG. 7) of projection optical units arranged along the direction intersecting the moving direction of the sheet substrate SH. A configuration including PLa, PLb, and PLc is also possible. In the configuration of FIG. 7, the first imaging region ERa corresponding to the first projection optical unit PLa, the second imaging region ERb corresponding to the second projection optical unit PLb, and the first imaging region corresponding to the third projection optical unit PLc. The three imaging regions ERc are set so as to partially overlap each other when viewed along the moving direction of the sheet substrate SH.

  As described above, for example, Japanese Laid-Open Patent Publication No. 2001-215718 discloses a technique for scanning exposure of a pattern on a photosensitive substrate using a projection optical system including a plurality of projection optical units arranged along a predetermined direction. ing. When the configuration of FIG. 7 is adopted, a pattern formed by overlapping the exposure region SR via the projection optical system PL by individually performing optical adjustment of the plurality of projection optical units PLa to PLc constituting the projection optical system. Image adjustment can be performed.

  Further, in the exposure apparatus of the present embodiment, the deformation of the exposure region SR is measured at any time during the scanning exposure on the sheet substrate SH, and is formed so as to overlap the exposure region SR via the projection optical system PL based on the measurement result. The pattern image to be adjusted is adjusted as necessary. Specifically, when measuring the deformation of the exposure region SR, the images 15a and 16a of the mask alignment marks 15 and 16 and the sheet alignment mark via the quarter wavelength plate 41 of the detection systems 30a to 30c and the polarization beam splitter PBS. Both 25 and 26 images 25a and 26a are detected.

  The control system CR detects the detection results of the detection systems 30a to 30c, that is, relative to the images 15a and 16a of the mask alignment marks 15 and 16 detected by the detection systems 30a to 30c and the images 25a and 26a of the sheet alignment marks 25 and 26. Based on the information regarding the position, the deviation of the outer shape of the exposure region SR from the predetermined shape, that is, the deformation of the exposure region SR is measured. Further, the control system CR, when measuring the deformation of the exposure region SR, detects the detection results of the detection systems 33 and 34, that is, the images 13a and 14a of the mask alignment marks 13 and 14 detected by the detection systems 33 and 34, and the sheet alignment marks. Reference is made to information relating to the relative positions of the images 23 and 24 to the images 23a and 24a.

  Specifically, for example, the distance between the images 15a and 16a of the mask alignment marks 15 and 16 and the images 25a and 26a of the sheet alignment marks 25 and 26 in the detection field of the detection systems 30a to 30c is compared with a predetermined reference value. By doing so, the deformation of the exposure region SR is measured. If necessary, for example, the distance between the images 13a and 14a of the mask alignment marks 13 and 14 and the images 23a and 24a of the sheet alignment marks 23 and 24 in the detection field of the detection systems 33 and 34, and a predetermined reference value The deformation of the exposure region SR is measured with reference to the comparison.

  The control system CR has already been formed in the exposure region SR by performing optical adjustment (adjustment of imaging characteristics; aberration adjustment, etc.) of the projection optical system PL based on the measurement results of the detection systems 30a to 30c relating to the deformation of the exposure region SR. The pattern image formed so as to be superimposed on the exposure region SR is adjusted via the projection optical system PL so that a new pattern can be superimposed and transferred with high accuracy with respect to the pattern being applied. When a projection optical system composed of a plurality of projection optical units is used, it is formed so as to overlap the exposure region SR via the projection optical system composed of a plurality of projection optical units by individually performing optical adjustment of the plurality of projection optical units. The pattern image can be adjusted.

  Further, in the exposure apparatus of the present embodiment, when scanning exposure is performed on the sheet substrate SH, the deformation of the exposure area SR that is the next exposure target after the exposure area SR that is being exposed is measured as needed, and the measurement result is obtained. Based on this, adjustment of the pattern image formed so as to overlap the exposure region SR via the projection optical system PL is performed as necessary. Specifically, in the prior measurement regarding the deformation of the exposure region SR, the optical microscopes 35a to 35c detect images of the three sheet alignment marks 25 formed between the exposure region being exposed and the exposure region in front thereof, The optical microscopes 36a to 36c detect images of the three sheet alignment marks 26 formed between the exposure area being exposed and the exposure area in front thereof.

  The control system CR detects the detection results of the optical microscopes 35a to 35c; 36a to 36c, that is, the deviation of the image of the three sheet alignment marks 25 detected by the optical microscopes 35a to 35c from the predetermined position, and the optical microscopes 36a to 36c. Based on the positional deviation information relating to the deviation of the image of the three sheet alignment marks 26 from the predetermined position, the deviation of the outer shape of the exposure area SR that is the next exposure object from the predetermined shape, that is, the deformation of the exposure area SR. Measure in advance prior to the start of scanning exposure.

  The control system CR performs optical adjustment of the projection optical system PL based on the measurement results of the optical microscopes 35a to 35c and 36a to 36c related to the deformation of the exposure region SR at the time of scanning exposure to the exposure region SR that was the object of the preliminary measurement. Adjustment of imaging characteristics; aberration adjustment, etc.). That is, the pattern formed to be superimposed on the exposure region SR via the projection optical system PL so that a new pattern can be superimposed and transferred with high accuracy on the pattern already formed on the exposure region SR. Adjust the image. When a projection optical system composed of a plurality of projection optical units is used, it is formed so as to overlap the exposure region SR via the projection optical system composed of a plurality of projection optical units by individually performing optical adjustment of the plurality of projection optical units. The pattern image can be adjusted.

  By the way, the reflectance with respect to the exposure light of the photosensitive film which consists of a resist (photosensitive material) is small, and exposure light is easy to be absorbed by the photosensitive film. Therefore, a device for detecting reflected images of the sheet alignment marks 23 to 26 formed under the photosensitive film with sufficient contrast is required. In the configuration example shown in FIG. 8, a sheet alignment mark 84 is provided on the boundary surface 83 between the photosensitive film 81 and the main body portion 82 of the sheet substrate SH. The reflectance of the photosensitive film 81 with respect to the exposure light is about 5%, and the refractive index is about 1.6.

  The refractive index of the main body portion 82 of the sheet substrate SH with respect to the exposure light is about 1.5, and the reflectance of the boundary surface 83 with respect to the exposure light is about 0.1%. In this case, the outer peripheral surface of the drum RL is processed so that the reflectance with respect to the exposure light is, for example, 1% or less, and the sheet alignment mark 84 made of a highly reflective pattern having a reflectance of about 70% with respect to the exposure light is used. As a result, a reflected image of the sheet alignment mark 84 having a relatively good contrast can be detected.

  However, the exposure light is easily absorbed by the photosensitive film, and it may be difficult to detect the reflected images of the sheet alignment marks 23 to 26 formed under the photosensitive film with sufficient contrast. Therefore, for example, as shown in FIG. 9, as a modification of the detection systems 33, 34, 30a to 30c, visible light in a predetermined wavelength range (visible light in a relatively wide wavelength range) that is difficult to be absorbed by the photosensitive film, that is, a sheet substrate. A configuration is possible in which reflected images of the sheet alignment marks 23 to 26 are detected with sufficient contrast using non-exposure light that is not sensitive to SH.

  Referring to FIG. 9, the detection systems 33A, 34A, 30Aa, 30Ab, and 30Ac according to the modification have a similar configuration to the detection systems 33, 34, and 30a to 30c shown in FIG. A dichroic prism (or dichroic mirror) 51 disposed in the optical path between the aperture stop 44 and a light source 52 for supplying alignment light that is non-exposure light to which the sheet substrate SH is insensitive. A third relay lens 53 and a beam splitter 54 are arranged between the dichroic prism 51 and the light source 52 in order from the light source 52 side.

  Further, the light incident from the dichroic prism 51 and reflected by the beam splitter 54 is incident on the photoelectric converter 56 formed of, for example, a CCD type or CMOS type two-dimensional imaging element via the fourth relay lens 55. It is configured. In the detection systems 33 </ b> A, 34 </ b> A, 30 </ b> Aa to 30 </ b> Ac according to the modification of FIG. 9, the alignment light supplied from the light source 52 enters the dichroic prism 51 via the third relay lens 53 and the beam splitter 54. The dichroic prism 51 is configured to reflect alignment light and transmit exposure light.

  The alignment light reflected by the dichroic prism 51 enters the polarization beam splitter PBS via the s-polarized transmission polarizer 43 and the first relay lens 42. The alignment light reflected by the polarization beam splitter PBS illuminates the sheet alignment marks 23 to 26 via the quarter-wave plate 41 and the projection optical system PL. The alignment light reflected by the sheet alignment marks 23 to 26 is incident on the polarization beam splitter PBS via the projection optical system PL and the quarter wavelength plate 41.

  The alignment light reflected by the polarization beam splitter PBS is incident on the dichroic prism 51 via the first relay lens 42 and the s-polarized transmission polarizer 43. The alignment light reflected by the dichroic prism 51 is reflected by the beam splitter 54 and reaches the photoelectric converter 56 via the fourth relay lens 55. Images of the sheet alignment marks 23 to 26 are formed on the detection surface of the photoelectric converter 56 with sufficient contrast.

  That is, the detection systems 33A, 34A, 30Aa to 30Ac illuminate the sheet alignment marks 23 to 26 via the projection optical system PL with non-exposure light, and the non-exposure light from the sheet alignment marks 23 to 26 is projected onto the projection optical system PL. The images of the sheet alignment marks 23 to 26 formed via the are detected. Thus, in the detection systems 33A, 34A, and 30Aa to 30Ac, the image of the sheet alignment marks 23 to 26 formed using the alignment light that is the non-exposure light is detected by the photoelectric converter 56, and formed using the exposure light. Images of the sheet alignment marks 23 to 26 can be detected by the photoelectric converter 45.

  For example, as shown in FIG. 10, as a modification of at least one of the detection systems 31 to 34, 30 a to 30 c, for example, the detection system 31, the incident light enters the illumination system IL without passing through the projection optical system PL. A configuration having an illuminance sensor 61 that extracts and monitors a part of the emitted light from the optical path is also possible. Referring to FIG. 10, the detection system 31B (32B, 33B, 34B, 30Ba, 30Bb, 30Bc) according to the modification has a configuration similar to that of the detection system 31 (32-34, 30a-30c) shown in FIG. However, a polarizing beam splitter 62 is attached after the first relay lens 42, and the reflected light of the polarizing beam splitter 62 is guided to the photoelectric converter 46 through the aperture stop 44 and the second relay lens 45, and the polarizing beam splitter 62. The transmitted light is guided to the illuminance sensor 61.

  In the detection system 31B according to the modification of FIG. 10, the illumination light that has entered the polarization beam splitter PBS from the illumination system IL and transmitted therethrough, that is, p-polarized leakage light, passes through the first relay lens 42 to the polarization beam splitter 62. Incident. The leakage light of the illumination light that has passed through the polarization beam splitter 62 reaches the illuminance sensor 61. In this way, the illuminance sensor 61 takes out and monitors a part of the incident light from the illumination system IL without passing through the projection optical system PL, and by extension, monitors the intensity of the exposure light reaching the sheet substrate SH via the projection optical system PL. Monitor (light intensity). The monitoring result of the illuminance sensor 61 is supplied to the control system CR.

  The control system CR keeps the intensity of exposure light reaching the sheet substrate SH via the projection optical system PL substantially constant by adjusting the output of the light source LS based on the monitoring result of the illuminance sensor 61. The control system CR adjusts the dimming rate of the dimming means in the optical path based on the monitor result of the illuminance sensor 61 instead of adjusting the output of the light source LS or in addition to adjusting the output of the light source LS. Thus, the intensity of the exposure light reaching the sheet substrate SH via the projection optical system PL is kept substantially constant.

  In the above-described embodiment, the images 15a and 16a of the mask alignment marks 15 and 16 are detected using at least one of the detection systems 30a to 30c, and focus adjustment is performed from the contrast of the images 15a and 16a. It can be performed. Specifically, for example, the contrast of the images 15a and 16a obtained when the illumination area IR on the mask M and the imaging area ER on the sheet substrate SH are in the best focus state through the projection optical system PL by trial exposure, for example. Is the best contrast. The control system CR refers to the detection results of the detection systems 30a to 30c, and adjusts the Z-direction position of the mask M and thus the Z-direction position of the illumination region IR so that the contrast of the images 15a and 16a approaches the best contrast. .

  In the above-described embodiment, the plurality of mask alignment marks 13 and 14 are provided in the area between the pattern area PA and the plurality of mask reference marks 11 and 12. However, when the sheet substrate SH is light transmissive, the plurality of mask alignment marks 13 and 14 and the plurality of mask reference marks 11 and 12 can be a common mark.

  Further, in the above-described embodiment, a part of the drum RL that rotates around the axis RLa is obtained by using a pattern provided in the pattern area PA on the outer peripheral surface of the columnar (or cylindrical) mask M that rotates around the axis Ma. Scanning exposure is performed on the exposure region SR on the sheet substrate SH that is wound around the sheet substrate and moves in one direction. However, the present invention is not limited to this, and in the embodiment using the mask alignment mark and the sheet alignment mark, the pattern provided in the pattern area on the outer peripheral surface of the columnar or cylindrical mask that rotates around the first axis is used. The present invention is also applicable to an exposure apparatus that scans and exposes an exposure region on a flexible sensitive substrate that moves in the longitudinal direction while being supported by a cylindrical or planar support surface of a support member.

  The exposure apparatus of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  A semiconductor device, a liquid crystal device, or the like can be manufactured using the exposure apparatus according to the above-described embodiment. FIG. 11 is a flowchart showing a manufacturing process of a semiconductor device. As shown in FIG. 11, in the semiconductor device manufacturing process, a metal film is vapor-deposited on a wafer to be a semiconductor device substrate (step S40), and a photoresist, which is a photosensitive material, is applied onto the vapor-deposited metal film ( Step S42). Subsequently, by using the exposure apparatus of the above-described embodiment, the pattern formed on the mask M is transferred to each exposure region on the wafer (step S44: exposure process), and the development of the wafer after the transfer, that is, the pattern is transferred. The transferred photoresist is developed (step S46: development step).

  Thereafter, the resist pattern generated on the surface of the wafer in step S46 is used as a mask for wafer processing, and processing such as etching is performed on the surface of the wafer (step S48: processing step). Here, the resist pattern is a photoresist layer (transfer pattern layer) in which unevenness having a shape corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment is generated, and the recess penetrates the photoresist layer. It is what you are doing. In step S48, the surface of the wafer is processed through this resist pattern. The processing performed in step S48 includes, for example, at least one of etching of the wafer surface or film formation of a metal film or the like. In step S44, the exposure apparatus according to the above-described embodiment performs pattern transfer using the photoresist-coated wafer as a photosensitive substrate.

  FIG. 12 is a flowchart showing a manufacturing process of a liquid crystal device such as a liquid crystal display element. As shown in FIG. 12, in the liquid crystal device manufacturing process, a pattern formation process (step S50), a color filter formation process (step S52), a cell assembly process (step S54), and a module assembly process (step S56) are sequentially performed. In the pattern forming step in step S50, predetermined patterns such as a circuit pattern and an electrode pattern are formed on the glass substrate coated with a photoresist as the photosensitive substrate, using the exposure apparatus of the above-described embodiment. The pattern forming process includes an exposure process in which a pattern is transferred to a photoresist layer using the exposure apparatus of the above-described embodiment, and development of a photosensitive substrate to which the pattern is transferred, that is, development of a photoresist layer on a glass substrate. And a development step for generating a photoresist layer (transfer pattern layer) having a shape corresponding to the pattern, and a processing step for processing the surface of the glass substrate through the developed photoresist layer.

  In the color filter forming process in step S52, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning direction. In the cell assembly process in step S54, a liquid crystal panel (liquid crystal cell) is assembled using the glass substrate on which the predetermined pattern is formed in step S50 and the color filter formed in step S52. Specifically, for example, a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter. In the module assembling process in step S56, various components such as an electric circuit and a backlight for performing the display operation of the liquid crystal panel are attached to the liquid crystal panel assembled in step S54.

  The present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor device or a liquid crystal device. For example, an exposure apparatus for a display device such as a plasma display, an image sensor (CCD or the like), a micromachine, The present invention can be widely applied to an exposure apparatus for manufacturing various devices such as a thin film magnetic head and a DNA chip. Furthermore, the present invention can also be applied to an exposure process (exposure apparatus) when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.

11, 12 Mask reference marks 13-16 Mask alignment marks 21, 22 Drum reference marks 23-26 Sheet alignment marks 31-34, 30a-30c Detection systems 35a-35c; 36a-36c Optical microscope LS Light source IL Illumination system M Mask Ma Center axis IR of mask Illumination area PL Projection optical system PBS Polarizing beam splitter WC 1/4 wavelength plate SH Sheet substrate ER Imaging area RL Drum (roller)
RLa drum center axis DR1, DR2 Drive system CR control system

Claims (57)

Flexibility in which the pattern provided in the pattern area on the outer peripheral surface of the columnar or cylindrical mask rotating around the first axis is wound around a part of the drum rotating around the second axis and moved in one direction An exposure apparatus that scans and exposes an exposure area on the sensitive substrate,
A plurality of first reference marks are provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask,
On the outer peripheral surface of the drum, a plurality of second reference marks are provided along the circumferential direction so as to correspond to the plurality of first reference marks,
An illumination system for forming an illumination area on the outer peripheral surface of the mask by exposure light;
A projection optical system for forming an image of a pattern in the illumination area on an imaging area on the sensitive substrate;
An image of the first fiducial mark formed via the projection optical system after light from the first fiducial mark illuminated by the illumination system is reflected by the outer peripheral surface of the drum via the projection optical system; A first detection system that detects both the image of the second reference mark formed by the light from the second reference mark illuminated by the illumination system via the projection optical system and the projection optical system; An exposure apparatus comprising: A relative position along the first axis direction of the mask with respect to the drum based on information on a relative position between the image of the first reference mark and the image of the second reference mark detected by the first detection system. A first adjustment for adjusting a relative position of the mask around the first axis with respect to the drum and a relative position of the mask with respect to the drum around a third axis perpendicular to the first axis through the center of the illumination area; The exposure apparatus according to claim 1, further comprising a system. The first adjustment system includes a drive system that drives movement of the mask in the first axis direction, rotation of the mask around the first axis, and rotation of the mask around the third axis, and the first adjustment system. The exposure apparatus according to claim 2, further comprising a first control system that controls the drive system based on a detection result of a detection system. 4. The exposure apparatus according to claim 1, wherein the first detection system includes a shielding member that blocks incident light from the illumination system without passing through the projection optical system. 5. 5. The sensor according to claim 1, wherein the first detection system includes a sensor that extracts and monitors a part of incident light from the illumination system without passing through the projection optical system. The exposure apparatus described in 1. A plurality of first alignment marks are provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask,
Outside the exposure area on the sensitive substrate, a plurality of second alignment marks are formed along the longitudinal direction of the sensitive substrate so as to correspond to the plurality of first alignment marks,
An image of the first alignment mark formed via the projection optical system after light from the first alignment mark illuminated by the illumination system is reflected by the sensitive substrate via the projection optical system; A second detection system configured to detect together the image of the second alignment mark formed by the light from the second alignment mark illuminated via the projection optical system by the illumination system via the projection optical system; The exposure apparatus according to claim 1, wherein the exposure apparatus includes: Based on the information on the relative position between the image of the first alignment mark and the image of the second alignment mark detected by the second detection system, the pattern region relative to the exposure region along the first axis Position, relative position of the pattern area relative to the exposure area around the first axis, and relative position of the pattern area relative to the exposure area around the third axis passing through the center of the illumination area and perpendicular to the first axis. The exposure apparatus according to claim 6, further comprising a second adjustment system for adjustment. The second adjustment system includes a drive system that drives movement of the mask in the first axis direction, rotation of the mask around the first axis, and rotation of the mask around the third axis, and the second adjustment system. The exposure apparatus according to claim 7, further comprising: a second control system that controls the drive system based on a detection result of a detection system. Based on the information about the relative position between the image of the first alignment mark and the image of the second alignment mark detected by the second detection system, the image is formed so as to overlap the exposure area via the projection optical system. The exposure apparatus according to claim 6, further comprising a third adjustment system that adjusts the pattern image. The exposure apparatus according to claim 9, wherein the third adjustment system includes a third control system that performs optical adjustment of the projection optical system based on a detection result of the second detection system. The projection optical system has a plurality of projection optical units arranged along the second axis direction,
The exposure apparatus according to claim 10, wherein the third control system individually performs optical adjustment of the plurality of projection optical units. The exposure apparatus according to claim 6, wherein the plurality of first alignment marks are provided in a region between the pattern region and the plurality of first reference marks. . 12. The sensitive substrate according to claim 6, wherein the sensitive substrate is light transmissive, and the plurality of first alignment marks and the plurality of first reference marks have a common mark. Exposure equipment. The exposure apparatus according to claim 6, wherein the second detection system includes a shielding member that blocks incident light from the illumination system without passing through the projection optical system. The second detection system illuminates the second alignment mark with non-exposure light through the projection optical system, and the second detection system forms non-exposure light from the second alignment mark through the projection optical system. The exposure apparatus according to claim 6, wherein an image of the alignment mark is detected. 16. The sensor according to claim 6, wherein the second detection system includes a sensor that extracts and monitors a part of incident light from the illumination system without passing through the projection optical system. The exposure apparatus described in 1. A plurality of third alignment marks are provided along the first axis direction outside the pattern region on the outer peripheral surface of the mask,
Between a pair of adjacent exposure areas on the sensitive substrate, a plurality of fourth alignment marks are formed along the width direction of the sensitive substrate so as to correspond to the plurality of third alignment marks,
An image of the third alignment mark formed via the projection optical system after light from the third alignment mark illuminated by the illumination system is reflected by the sensitive substrate via the projection optical system; A third detection system for detecting together the image of the fourth alignment mark formed by the light from the fourth alignment mark illuminated through the projection optical system by the illumination system through the projection optical system; The exposure apparatus according to claim 6, wherein the exposure apparatus includes: Based on information on the relative position between the image of the third alignment mark and the image of the fourth alignment mark detected by the third detection system, the image is formed so as to overlap the exposure area via the projection optical system. The exposure apparatus according to claim 17, further comprising a fourth adjustment system that adjusts the pattern image. The exposure apparatus according to claim 18, wherein the fourth adjustment system includes a fourth control system that performs optical adjustment of the projection optical system based on a detection result of the third detection system. The projection optical system has a plurality of projection optical units arranged along the second axis direction,
The exposure apparatus according to claim 19, wherein the fourth control system individually performs optical adjustment of the plurality of projection optical units. 21. The exposure apparatus according to any one of claims 17 to 20, wherein the third detection system includes a shielding member that blocks incident light from the illumination system without passing through the projection optical system. The third detection system illuminates the fourth alignment mark with non-exposure light through the projection optical system, and the fourth detection mark is formed by non-exposure light from the fourth alignment mark through the projection optical system. The exposure apparatus according to any one of claims 17 to 21, wherein an image of an alignment mark is detected. 23. The sensor according to claim 17, wherein the third detection system includes a sensor that extracts and monitors a part of incident light from the illumination system without passing through the projection optical system from an optical path. The exposure apparatus described in 1. The plurality of fourth alignment marks include a first group of alignment marks formed along the width direction of the sensitive substrate, and a second group of alignment marks formed in parallel with the first group of alignment marks. Have
Arranged in front of the imaging region along the moving direction of the sensitive substrate, the alignment marks of the first group and the second group are illuminated by non-exposure light, and the illuminated first group and the illuminated group 24. A fourth detection system for detecting an image of the first group and the second group of alignment marks formed by light from a second group of alignment marks. 2. The exposure apparatus according to item 1. A fifth adjustment system that adjusts a pattern image formed on the exposure region via the projection optical system based on positional information of the images of the plurality of fourth alignment marks detected by the fourth detection system. The exposure apparatus according to claim 24, further comprising: 26. The exposure apparatus according to claim 25, wherein the fifth adjustment system includes a fifth control system that performs optical adjustment of the projection optical system based on a detection result of the fourth detection system. The projection optical system has a plurality of projection optical units arranged along the second axis direction,
27. The exposure apparatus according to claim 26, wherein the fifth control system individually performs optical adjustment of the plurality of projection optical units. The fourth detection system includes a first group of optical microscopes arranged to correspond to the first group of alignment marks, and a second group of optics arranged to correspond to the second group of alignment marks. The exposure apparatus according to claim 24, further comprising a microscope. The pattern provided in the pattern area on the outer peripheral surface of the columnar or cylindrical mask that rotates around the first axis is moved in the longitudinal direction while being supported by the cylindrical or planar support surface of the support member. An exposure apparatus that scans and exposes an exposure area on a flexible sensitive substrate,
A plurality of first alignment marks are provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask,
Outside the exposure area on the sensitive substrate, a plurality of second alignment marks are formed along the longitudinal direction of the sensitive substrate so as to correspond to the plurality of first alignment marks,
An illumination system for forming an illumination area on the outer peripheral surface of the mask by exposure light;
A projection optical system for forming an image of a pattern in the illumination area on an imaging area on the sensitive substrate;
An image of the first alignment mark formed via the projection optical system after light from the first alignment mark illuminated by the illumination system is reflected by the sensitive substrate via the projection optical system; A second detection system for detecting together the image of the second alignment mark formed by the light from the second alignment mark illuminated via the projection optical system by the illumination system via the projection optical system; An exposure apparatus characterized by comprising: Based on the information on the relative position between the image of the first alignment mark and the image of the second alignment mark detected by the second detection system, the pattern region relative to the exposure region along the first axis Position, relative position of the pattern area relative to the exposure area around the first axis, and relative position of the pattern area relative to the exposure area around the third axis passing through the center of the illumination area and perpendicular to the first axis. 30. The exposure apparatus according to claim 29, further comprising a second adjustment system for adjustment. The second adjustment system includes a drive system that drives movement of the mask in the first axis direction, rotation of the mask around the first axis, and rotation of the mask around the third axis, and the second adjustment system. 31. The exposure apparatus according to claim 30, further comprising a second control system that controls the drive system based on a detection result of the detection system. Based on the information about the relative position between the image of the first alignment mark and the image of the second alignment mark detected by the second detection system, the image is formed so as to overlap the exposure area via the projection optical system. 32. The exposure apparatus according to claim 29, further comprising a third adjustment system that adjusts the pattern image. The exposure apparatus according to claim 32, wherein the third adjustment system includes a third control system that performs optical adjustment of the projection optical system based on a detection result of the second detection system. The projection optical system has a plurality of projection optical units arranged along the width direction of the sensitive substrate,
34. The exposure apparatus according to claim 33, wherein the third control system individually performs optical adjustment of the plurality of projection optical units. The plurality of first alignment marks are provided in a region between the pattern region and a plurality of first reference marks provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask. 35. The exposure apparatus according to any one of claims 29 to 34, wherein: The sensitive substrate has optical transparency, and the plurality of first alignment marks and the plurality of first reference marks provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask are common. 35. The exposure apparatus according to any one of claims 29 to 34, further comprising: 37. The exposure apparatus according to claim 29, wherein the second detection system includes a shielding member that blocks incident light from the illumination system without passing through the projection optical system. The second detection system illuminates the second alignment mark with non-exposure light through the projection optical system, and the second detection system forms non-exposure light from the second alignment mark through the projection optical system. 38. The exposure apparatus according to any one of claims 29 to 37, wherein an image of an alignment mark is detected. 39. The sensor according to claim 29, wherein the second detection system includes a sensor that extracts and monitors a part of incident light from the illumination system without passing through the projection optical system. The exposure apparatus described in 1. A plurality of third alignment marks are provided along the first axis direction outside the pattern region on the outer peripheral surface of the mask,
Between a pair of adjacent exposure areas on the sensitive substrate, a plurality of fourth alignment marks are formed along the width direction of the sensitive substrate so as to correspond to the plurality of third alignment marks,
An image of the third alignment mark formed via the projection optical system after light from the third alignment mark illuminated by the illumination system is reflected by the sensitive substrate via the projection optical system; A third detection system for detecting together the image of the fourth alignment mark formed by the light from the fourth alignment mark illuminated through the projection optical system by the illumination system through the projection optical system; 40. The exposure apparatus according to any one of claims 29 to 39, wherein: Based on information on the relative position between the image of the third alignment mark and the image of the fourth alignment mark detected by the third detection system, the image is formed so as to overlap the exposure area via the projection optical system. 41. The exposure apparatus according to claim 40, further comprising a fourth adjustment system for adjusting the pattern image. 42. The exposure apparatus according to claim 41, wherein the fourth adjustment system includes a fourth control system that performs optical adjustment of the projection optical system based on a detection result of the third detection system. The projection optical system has a plurality of projection optical units arranged along the width direction of the sensitive substrate,
43. The exposure apparatus according to claim 42, wherein the fourth control system individually performs optical adjustment of the plurality of projection optical units. 44. The exposure apparatus according to any one of claims 40 to 43, wherein the third detection system includes a shielding member that blocks incident light from the illumination system without passing through the projection optical system. The third detection system illuminates the fourth alignment mark with non-exposure light through the projection optical system, and the fourth detection mark is formed by non-exposure light from the fourth alignment mark through the projection optical system. 45. The exposure apparatus according to claim 40, wherein an image of the alignment mark is detected. 46. The sensor according to claim 40, wherein the third detection system includes a sensor that extracts and monitors a part of incident light from the illumination system without passing through the projection optical system. The exposure apparatus described in 1. The plurality of fourth alignment marks include a first group of alignment marks formed along the width direction of the sensitive substrate, and a second group of alignment marks formed in parallel with the first group of alignment marks. Have
Arranged in front of the imaging region along the moving direction of the sensitive substrate, the alignment marks of the first group and the second group are illuminated by non-exposure light, and the illuminated first group and the illuminated group 47. A fourth detection system for detecting images of the first group and the second group of alignment marks formed by light from a second group of alignment marks is provided. 2. The exposure apparatus according to item 1. A fifth adjustment system that adjusts a pattern image formed on the exposure region via the projection optical system based on positional information of the images of the plurality of fourth alignment marks detected by the fourth detection system. 48. The exposure apparatus according to claim 47, further comprising: 49. The exposure apparatus according to claim 48, wherein the fifth adjustment system includes a fifth control system that performs optical adjustment of the projection optical system based on a detection result of the fourth detection system. The projection optical system has a plurality of projection optical units arranged along the width direction of the sensitive substrate,
50. The exposure apparatus according to claim 49, wherein the fifth control system individually performs optical adjustment of the plurality of projection optical units. The fourth detection system includes a first group of optical microscopes arranged to correspond to the first group of alignment marks, and a second group of optics arranged to correspond to the second group of alignment marks. 51. An exposure apparatus according to claim 47, further comprising a microscope. A plurality of first reference marks are provided along the circumferential direction on both sides of the pattern region on the outer peripheral surface of the mask,
The support member is a cylindrical or columnar rotary drum that rotates about a second axis, and a plurality of second reference marks are provided on the outer peripheral surface of the drum so as to correspond to the plurality of first reference marks. Provided along the circumferential direction,
An image of the first fiducial mark formed via the projection optical system after light from the first fiducial mark illuminated by the illumination system is reflected by the outer peripheral surface of the drum via the projection optical system; A first detection system for detecting together the image of the second reference mark formed by the light from the second reference mark illuminated via the projection optical system by the illumination system via the projection optical system; 52. The exposure apparatus according to any one of claims 29 to 51, wherein the exposure apparatus is provided. A relative position along the first axis direction of the mask with respect to the drum based on information on a relative position between the image of the first reference mark and the image of the second reference mark detected by the first detection system. A first adjustment for adjusting a relative position of the mask around the first axis with respect to the drum and a relative position of the mask with respect to the drum around a third axis perpendicular to the first axis through the center of the illumination area; 53. The exposure apparatus according to claim 52, comprising a system. The first adjustment system includes a drive system that drives movement of the mask in the first axis direction, rotation of the mask around the first axis, and rotation of the mask around the third axis, and the first adjustment system. 54. The exposure apparatus according to claim 53, further comprising a first control system that controls the drive system based on a detection result of the detection system. 55. The exposure apparatus according to any one of claims 52 to 54, wherein the first detection system includes a shielding member that blocks incident light from the illumination system without passing through the projection optical system. 56. The sensor according to claim 52, wherein the first detection system includes a sensor that extracts and monitors a part of incident light from the illumination system without passing through the projection optical system. The exposure apparatus described in 1. Using the exposure apparatus according to any one of claims 1 to 56 to expose a predetermined pattern on a substrate;
Developing the substrate to which the predetermined pattern is transferred, and forming a mask layer having a shape corresponding to the predetermined pattern on the surface of the substrate;
Processing the surface of the substrate through the mask layer. A device manufacturing method comprising:

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