TWI688117B - 半導體發光裝置 - Google Patents
半導體發光裝置 Download PDFInfo
- Publication number
- TWI688117B TWI688117B TW106119884A TW106119884A TWI688117B TW I688117 B TWI688117 B TW I688117B TW 106119884 A TW106119884 A TW 106119884A TW 106119884 A TW106119884 A TW 106119884A TW I688117 B TWI688117 B TW I688117B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- emitting
- semiconductor layer
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 186
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000005530 etching Methods 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910020935 Sn-Sb Inorganic materials 0.000 description 4
- 229910008757 Sn—Sb Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910016338 Bi—Sn Inorganic materials 0.000 description 2
- 229910018100 Ni-Sn Inorganic materials 0.000 description 2
- 229910018532 Ni—Sn Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 229910018956 Sn—In Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910005887 NiSn Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015122754A JP6563703B2 (ja) | 2015-06-18 | 2015-06-18 | 半導体発光装置 |
| JP2015-122754 | 2015-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201735395A TW201735395A (zh) | 2017-10-01 |
| TWI688117B true TWI688117B (zh) | 2020-03-11 |
Family
ID=57588409
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106119884A TWI688117B (zh) | 2015-06-18 | 2016-03-11 | 半導體發光裝置 |
| TW105107647A TWI599068B (zh) | 2015-06-18 | 2016-03-11 | Semiconductor light-emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105107647A TWI599068B (zh) | 2015-06-18 | 2016-03-11 | Semiconductor light-emitting device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20160372627A1 (enExample) |
| JP (1) | JP6563703B2 (enExample) |
| CN (1) | CN106257698B (enExample) |
| TW (2) | TWI688117B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6909983B2 (ja) | 2018-11-29 | 2021-07-28 | 日亜化学工業株式会社 | 発光素子 |
| US12062746B2 (en) * | 2022-01-18 | 2024-08-13 | Excellence Opto. Inc. | Small-sized vertical light emitting diode chip with high energy efficiency |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140225141A1 (en) * | 2013-02-08 | 2014-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| JP2014525679A (ja) * | 2011-08-31 | 2014-09-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオードチップ |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101827975B1 (ko) * | 2011-10-10 | 2018-03-29 | 엘지이노텍 주식회사 | 발광소자 |
| TWI458122B (zh) * | 2011-11-23 | 2014-10-21 | Toshiba Kk | 半導體發光元件 |
| JP5776535B2 (ja) * | 2011-12-16 | 2015-09-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP5694215B2 (ja) * | 2012-03-07 | 2015-04-01 | 株式会社東芝 | 半導体発光素子 |
| JP2016134422A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
-
2015
- 2015-06-18 JP JP2015122754A patent/JP6563703B2/ja not_active Expired - Fee Related
-
2016
- 2016-02-23 US US15/051,433 patent/US20160372627A1/en not_active Abandoned
- 2016-03-10 CN CN201610137734.3A patent/CN106257698B/zh not_active Expired - Fee Related
- 2016-03-11 TW TW106119884A patent/TWI688117B/zh not_active IP Right Cessation
- 2016-03-11 TW TW105107647A patent/TWI599068B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014525679A (ja) * | 2011-08-31 | 2014-09-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光ダイオードチップ |
| US20140225141A1 (en) * | 2013-02-08 | 2014-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI599068B (zh) | 2017-09-11 |
| JP6563703B2 (ja) | 2019-08-21 |
| CN106257698B (zh) | 2020-07-21 |
| JP2017011016A (ja) | 2017-01-12 |
| TW201735395A (zh) | 2017-10-01 |
| US20160372627A1 (en) | 2016-12-22 |
| CN106257698A (zh) | 2016-12-28 |
| TW201701498A (zh) | 2017-01-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |