TWI686871B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI686871B
TWI686871B TW106116471A TW106116471A TWI686871B TW I686871 B TWI686871 B TW I686871B TW 106116471 A TW106116471 A TW 106116471A TW 106116471 A TW106116471 A TW 106116471A TW I686871 B TWI686871 B TW I686871B
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TW
Taiwan
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region
layer
oxide semiconductor
semiconductor layer
addition
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TW106116471A
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English (en)
Chinese (zh)
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TW201732952A (zh
Inventor
山崎舜平
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日商半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
TW106116471A 2011-06-17 2012-05-31 半導體裝置及其製造方法 TWI686871B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011134971 2011-06-17
JP2011-134971 2011-06-17

Publications (2)

Publication Number Publication Date
TW201732952A TW201732952A (zh) 2017-09-16
TWI686871B true TWI686871B (zh) 2020-03-01

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TW106116471A TWI686871B (zh) 2011-06-17 2012-05-31 半導體裝置及其製造方法
TW101119537A TWI595565B (zh) 2011-06-17 2012-05-31 半導體裝置及其製造方法

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US (1) US20120319113A1 (https=)
JP (3) JP6145251B2 (https=)
KR (1) KR20130005221A (https=)
TW (2) TWI686871B (https=)

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US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2014013959A1 (en) * 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102001057B1 (ko) 2012-10-31 2019-07-18 엘지디스플레이 주식회사 어레이 기판의 제조방법
KR102222344B1 (ko) * 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014229713A (ja) * 2013-05-21 2014-12-08 独立行政法人産業技術総合研究所 半導体装置および半導体装置の製造方法
JP6345544B2 (ja) * 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI677989B (zh) * 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN103560113B (zh) * 2013-11-15 2017-02-01 北京京东方光电科技有限公司 一种阵列结构及其制作方法、阵列基板和显示装置
JP2015204368A (ja) * 2014-04-14 2015-11-16 日本放送協会 薄膜トランジスタおよび表示装置
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10403646B2 (en) * 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6732713B2 (ja) * 2017-10-04 2020-07-29 株式会社Ｊｏｌｅｄ 半導体装置および表示装置
US12402357B2 (en) 2019-01-29 2025-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a groove portion in an oxide layer of a transistor channel
JP7534083B2 (ja) * 2019-11-26 2024-08-14 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法
KR102698154B1 (ko) * 2019-12-31 2024-08-22 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
JP7387475B2 (ja) 2020-02-07 2023-11-28 キオクシア株式会社 半導体装置及び半導体記憶装置
JP7562434B2 (ja) * 2021-01-25 2024-10-07 株式会社ジャパンディスプレイ 半導体装置
EP4403666A3 (en) 2022-05-31 2024-09-25 Imec VZW Mixed metal oxides
CN115588696A (zh) * 2022-09-29 2023-01-10 昆山国显光电有限公司 一种薄膜晶体管、阵列基板及薄膜晶体管的制备方法
WO2026074339A1 (ja) * 2024-10-04 2026-04-09 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

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Also Published As

Publication number Publication date
JP2013021317A (ja) 2013-01-31
JP6408644B2 (ja) 2018-10-17
JP2019012843A (ja) 2019-01-24
US20120319113A1 (en) 2012-12-20
TW201732952A (zh) 2017-09-16
JP6145251B2 (ja) 2017-06-07
TWI595565B (zh) 2017-08-11
JP2017183739A (ja) 2017-10-05
TW201301406A (zh) 2013-01-01
KR20130005221A (ko) 2013-01-15

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