TWI680806B - 成膜裝置 - Google Patents

成膜裝置 Download PDF

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TWI680806B
TWI680806B TW107128819A TW107128819A TWI680806B TW I680806 B TWI680806 B TW I680806B TW 107128819 A TW107128819 A TW 107128819A TW 107128819 A TW107128819 A TW 107128819A TW I680806 B TWI680806 B TW I680806B
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film forming
substrate
infrared
forming apparatus
mist
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織田容征
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日商東芝三菱電機產業系統股份有限公司
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Abstract

本發明之目的在於提供一種能夠不降低成膜品質和成膜速度，而以低成本在基板上形成薄膜的成膜裝置。並且，本發明當中的紅外線照射器(2)係配置在下部容器(62)內中之與輸送裝置(53)隔著距離的位置。紅外線照射器(2)係執行從複數個紅外線燈(22)朝上方照射紅外線來對載置於輸送帶52上面的複數個基板10的加熱處理。在成膜室(6A)內，同時執行利用紅外線照射器2的紅外線照射所進行的加熱處理、與利用薄膜形成噴嘴(1)所進行的霧噴射處理，藉此在載置於輸送帶(52)上面的基板(10)上形成薄膜。

Description

成膜裝置
本發明是關用於太陽電池等的電子元件(device)之製造，在基板上形成薄膜的成膜裝置。
在基板上成膜的方法而有，有化學氣相沉積(CVD；Chemical Vapor Deposition)法。然而，化學氣相沉積法中，常需要進行真空下的成膜，除了需要使用真空泵(pump)等之外，還需要使用大型的真空容器。此外，化學氣相沉積法中，從成本等的觀點來看，進行成膜的基板難以採用大面積的基板的問題。因此，能夠進行大氣壓下之成膜處理的霧化(mist)法便受到矚目。
就利用霧化法的成膜裝置的相關習知技術而言，例如有下述專利文獻1的技術。
在專利文獻1的技術中，係從含有霧噴射用噴嘴(nozzle)等的霧噴射頭部(head)底面所設的原料溶液噴出口及反應材料噴出口，對配置在大氣中的基板噴射經霧化的原料溶液及反應材料。經由該噴射，在基板上會形成膜。此外，反應材料係指有助於與原料溶液間的反應的材料。
第3圖係顯示習知的成膜裝置的概略構成的說明圖。如第3圖所示，基板載置部即基板積載台(stage)30係在上面載置有複數個基板10。
基板積載台30係具有利用真空吸附構成的吸附機構31，藉由該吸附機構31，可將所載置的複數個基板10各者的整個背面吸附在基板積載台30上面。此外，基板積載台30在吸附機構31的下方設有加熱機構32，藉由該加熱機構32，可執行對載置於基板積載台30上面的複數個基板10的加熱處理。
薄膜形成噴嘴1(霧噴射部)是執行從設在噴射面1S的噴射口向下方噴射原料霧MT的霧噴射處理。此外，原料霧MT是使原料溶液霧化而得的霧，可藉由薄膜形成噴嘴1將原料霧MT噴射至大氣中。
薄膜形成噴嘴1、基板積載台30、及載置於基板積載台30上面的複數個基板10係全都收納在成膜室60。成膜室60是由上部容器68、下部容器69及門67所構成。成膜室60係在進行成膜處理時，將門67設為閉狀態而將上部容器68、下部容器69間的開口部封閉，藉此可將薄膜形成噴嘴1、基板積載台30及複數個基板10與外部隔離。
因此，將成膜室60的門67設為閉狀態，在加熱機構32的加熱處理中，以薄膜形成噴嘴1執行霧噴射處理，藉此可在載置於基板積載台30上面的基板10上形成薄膜。
如上述，習知的成膜裝置係藉由同時執行利用薄膜形成噴嘴1進行的霧噴射處理、與利用加熱機構32進行的加熱處理而將薄膜形成在基板10上。
[先行技術文獻] [專利文獻]
專利文獻1：國際專利公開第2017/068625號。
如上所述，在習知的成膜裝置中，一般而言是在將作為成膜對象物的基材即基板10載置上面上的基板積載台30的內部設置加熱機構32，將基板積載台30作為平面型加熱手段來使用。
在使用如基板積載台30的平面型加熱手段時，係令基板積載台30的上面與基板10的背面接觸，使熱在基板積載台30、基板10間傳遞，從而執行基板10的加熱處理。
然而，當基板10並非平板形狀，而是呈下面彎曲的形狀、或下面有凹凸的構造時，若是平面型加熱手段，基板積載台30上面與基板10背面的接觸就變成局部接觸。因此，利用加熱機構32進行的加熱處理時，有基板10的加熱變得不均勻、或是基板10發生翹曲而變形等的問題點。
本發明之目的在於解決上述問題點，提供一 種能夠在不降低成膜品質和成膜速度，而以低成本在基板上形成薄膜的成膜裝置。
本發明之成膜裝置係具備：載置著基板的基板載置部；設置成與前述基板載置部隔著距離，具有紅外線燈(lamp)，且執行從前述紅外線燈照射紅外線而加熱前述基板的加熱處理的加熱機構；以及執行將使原料溶液霧化而得的原料霧噴射在前述基板之表面的霧噴射處理的霧噴射部；同時執行利用前述加熱機構所進行的前述加熱處理與利用前述霧噴射部所進行的前述霧噴射處理，藉此在前述基板的表面形成薄膜。
申請專利範圍第1項所述之本發明的成膜裝置係具備加熱機構，該加熱機構係設置成與基板載置部隔著距離，且執行由紅外線燈照射紅外線，藉此對基板加熱的加熱處理。
因此，申請專利範圍第1項所述之本發明能夠在與基板沒有接觸關係下，利用加熱機構直接加熱基板，故此不論基板的形狀為何，皆能夠在不造成基板變形下進行均勻的加熱。
結果，申請專利範圍第1項所述之本發明的成膜裝置能夠在不降低成膜品質和成膜速度，以低成本在基板上形成薄膜。
本發明之目的、特徵、樣態及優點係藉由下 述的詳細說明與檢附圖式而更加明白。
1‧‧‧薄膜形成噴嘴
1S‧‧‧噴射面
2‧‧‧紅外線照射器
6A,6B‧‧‧成膜室
7‧‧‧氣簾
10‧‧‧基板
11,12‧‧‧成膜裝置
21‧‧‧燈載置台
22‧‧‧紅外線燈
30‧‧‧基板積載台
31‧‧‧吸附機構
32‧‧‧加熱機構
51‧‧‧輥
52‧‧‧輸送帶
53‧‧‧輸送裝置
60‧‧‧成膜室
61‧‧‧上部容器
62,62B‧‧‧下部容器
63‧‧‧開口部
67‧‧‧門
68‧‧‧上部容器
69‧‧‧下部容器
MT‧‧‧原料霧
第1圖是顯示本發明之實施形態1的成膜裝置的概略構成的說明圖。
第2圖是顯示本發明之實施形態2的成膜裝置的概略構成的說明圖。
第3圖是顯示習知的成膜裝置的概略構成的說明圖。
實施形態1
第1圖是顯示本發明之實施形態1的成模裝置的概略構成的說明圖。第1圖標有XYZ直角座標系。
如第1圖所示，實施形態1的成膜裝置11的主要構成要素含有：成膜室6A、薄膜形成噴嘴1、紅外線照射器2及輸送裝置(conveyor)53。
基板載置部即輸送裝置53是在輸送帶(blet)52的上面載置有複數個基板10。輸送裝置53具備：設置在左右(-X方向、+X方向)兩端的搬送用的一對輥(roller)51；以及跨設在一對輥51的環狀的輸送用的輸送帶52。
輸送裝置53係藉由一對輥51的旋轉驅動，而能夠使上方側(+Z方向側)的輸送帶52沿著搬送方向(X方向)移動。
輸送裝置53的一對輥51係設置在成膜室6A外，輸送帶52的中央部係設置在成膜室6A內，可經由設 置在成膜室6A之左右(-X方向、+X方向)側面之一部份的一對開口部63而在成膜室6A的內部與外部之間移動。
在成膜室6A內收納有：薄膜形成噴嘴1、輸送裝置53的一部份、載置於輸送裝置53的輸送帶52之上面的複數個基板10、以及紅外線照射器2。
成膜室6A係由上部容器61、下部容器62及一對開口部63所構成。一對開口部63係位於在Z方向的高度方向當中上部容器61與下部容器62之間。因此，設置在成膜室6A內之開口部63、63間的輸送裝置53係配置在比下部容器62高，而比上部容器61低的位置。
加熱機構即紅外線照射器2係利用未圖示的固定手段固定在與下部容器62內之輸送裝置53隔著距離的位置。
此外，紅外線照射器2係配置在從平面角度看來與成膜室6A內的輸送帶52之上面重疊的位置。
紅外線照射器2係由燈載置台21及複數個紅外線燈22所構成，在燈載置台21的上部可安裝複數個紅外線燈22。因此，紅外線照射器2可從複數個紅外線燈22朝上方(+Z方向)照射紅外線。能夠執行藉由利用紅外線照射器2進行的上述紅外線光照射，而針對載置於輸送帶52上面的複數個基板10的加熱處理。
霧噴射部即薄膜形成噴嘴1係藉由未圖示的固定手段而固定配置在上部容器61內。此時，薄膜形成噴嘴1係以噴射面1S與輸送帶52上面相對向的位置關係配 置。
薄膜形成噴嘴1係執行從設在噴射面1S的噴射口往下方(-Z方向)噴射原料霧MT的霧噴射處理。此外，原料霧MT是使原料溶液霧化而得的霧，藉由薄膜形成噴嘴1而能夠將原料霧MT噴射至大氣中。
成膜室6A係在進行成膜處理時，利用氣簾(air curtain)7將上部容器61、下部容器62間的開口部63封閉，藉此而能夠將薄膜形成噴嘴1、載置於輸送帶52上的複數個基板10及遠紅外線照射器2與外部隔離。
因此，實施形態1的成膜裝置11能夠利用氣簾7將成膜室6A的一對開口部63設成為閉狀態，且使輸送裝置53的輸送帶52沿著搬送方向(X方向)移動來設定成膜環境。
此外，成膜裝置11是在上述成膜環境下，同時執行利用紅外線照射器2的紅外線照射所進行的加熱處理、與利用薄膜形成噴嘴1所進行的霧噴射處理，藉此在成膜室6A內在載置於輸送帶52上面的基板10上形成薄膜。
如上述，實施形態1的成膜裝置11係具備設置成與基板載置部即輸送裝置53隔著距離，且執行從紅外線燈22照射紅外線以直接加熱複數個基板10之加熱處理的紅外線照射器2作為加熱機構。
因此，實施形態1的成膜裝置11能夠在與基板10沒有接觸關係下利用紅外線照射器2直接加熱基板 10，故此不論基板10的形狀為何，皆能夠在不造成基板10變形下進行均勻的加熱。
結果，實施形態1的成膜裝置11係能夠在不降低成膜品質和成膜速度下，以低成本在基板10上形成薄膜。
此外，實施形態1的成膜裝置11係將加熱機構即紅外線照射器2設在成膜室6A內，藉此能夠不隔著成膜室6A對基板10照射紅外線，而能夠相應地提高紅外線的照射效率。
另外，從位於輸送裝置53下方(-Z方向)的紅外線照射器2而來的紅外線的照射是朝上方(+Z方向)進行，故此紅外線是隔著輸送裝置53的輸送帶52(上方側及下方側)照射至複數個基板10。
考慮上述點，可採取的對策有：第一對策，係將輸送帶52以一對線狀的輸送鍊的組合來構成，以形成存在有供紅外線通過用的開口部分的構造；以及第二對策，係將輸送帶52的構成材料採用不會吸收紅外線、且紅外線的透射性優異的紅外線透射材料。
因此，關於輸送帶52，採用上述第一及第二對策當中的至少一個對策，藉此，可將輸送帶52吸收紅外線的程度抑制在必要之最小限度。
以下說明第二對策的具體例。就紅外線透射材料而言，例如可考慮鍺(germanium)、矽(sillicon)、硫化鋅、硒化鋅(zinc selenide)等。但，必須滿足作為輸送帶52 使用所需的強度。
而且，從紅外線照射器2所照射的紅外線的波長最好採用避開原料霧MT的吸收波長區域而設定的第一變形例。就實現第一變形例的具體設定而言，可考慮將從紅外線照射器2所照射的紅外線的波長設定在700至900nm的範圍。這是因為藉由上述具體設定，可避開使用可設想之溶劑的原料霧MT的吸收波長區域。
如上述具體設定，確認了已知若將從紅外線照射器2所照射的紅外線的波長設定在700至900nm的範圍，當成膜原料溶液的溶劑為水或甲苯(toluene)時，就會成為在原料霧MT的吸收波長區域以外的事實。
成膜裝置11係採用上述第一變形例，藉此達成可避免原料霧MT吸收從紅外線照射器2所照射的紅外線，發生原料霧MT加熱而蒸發之原料霧蒸發現象的效果。
具體而言，第一變形例係採用將紅外線的波長設定在700至900nm的上述具體設定，藉此達成可避免對於所有可設想之原料的原料霧MT發生上述原料霧蒸發現象的效果。
實施形態2
第2圖是顯示本發明之實施形態2的成膜裝置的概略構成的說明圖。第2圖標有XYZ直角座標系。
如第2圖所示，實施形態2的成膜裝置12的主要構成要素含有：成膜室6B、薄膜形成噴嘴1、紅外線 照射器2及輸送裝置53。
以下，與實施形態1之成膜裝置11共通的構成部分標示相同的符號並適當省略說明，並且以實施形態2的成膜裝置12的特徵部位為中心加以說明。
在成膜室6B收納有：薄膜形成噴嘴1、輸送裝置53的一部份、以及載置於輸送裝置53的輸送帶52之上面的複數個基板10。成膜室6B係由上部容器61、下部容器62B及一對開口部63所構成，一對開口部63係設置在成膜室6B的左右側面的一部份。此外，一對開口部63係位於在Z方向的高度方向之上部容器61與下部容器62B之間。
成膜室6B的構成材料採用不會吸收從紅外線照射器2所照射的紅外線，而透射性優異的紅外線透射材料。具體而言，成膜室6B採用石英玻璃作為構成材料。
加熱機構即紅外線照射器2係藉由未圖示的固定手段而固定在下部容器62B外的下方(-Z方向)與輸送裝置53隔著距離的位置。
另外，紅外線照射器2係配置在俯視下與成膜室6B內的輸送帶52的上面重疊的位置。
紅外線照射器2係可藉由從複數個紅外線燈22朝向上方照射紅外線，來執行隔著下部容器62B及輸送帶52而對載置於輸送帶52之上面的複數個基板10的加熱處理。
成膜室6B係在進行成膜處理時，利用空氣簾 7將上部容器61、下部容器62B間的開口部63封閉，藉此可將薄膜形成噴嘴1、及載置於輸送帶52上的複數個基板10與外部隔離。
因此，實施形態2的成膜裝置12係利用空氣簾7使成膜室6B的一對開口部63設成為閉狀態，令輸送裝置53的輸送帶52沿搬送方向(X方向)移動，藉此而能夠設定成膜環境。
並且，成膜裝置12係在上述成膜環境下，同時執行利用紅外線照射器2的紅外線照射所進行的加熱處理、與利用薄膜形成噴嘴1所進行的霧噴射處理，藉此在成膜室6B內載置於輸送帶52上面的基板10上形成薄膜。
如上述，實施形態2的成膜裝置12係具備作為加熱機構的紅外線照射器2，該紅外線照射器2設置成與基板載置部即輸送帶52隔著距離，且執行從紅外線燈22照射紅外線以加熱複數個基板10之加熱處理的紅外線照射器2作為加熱機構。
因此，實施形態2的成膜裝置12係與實施形態1同樣，能夠在與基板10沒有接觸關係下，利用紅外線照射器2加熱基板10，故此不論基板10的形狀為何，皆可在不造成基板10變形下進行均勻的加熱。
結果，實施形態2的成膜裝置12與實施形態1同樣，能夠在不降低成膜品質和成膜速度下，以低成本在基板10上形成薄膜。
再者，實施形態2的成膜裝置12係將紅外線 照射器2設在成膜室6B外，藉此可謀求紅外線燈22的替換等、紅外線照射器2的維護的簡化。
除此之外，實施形態2的成膜裝置12的成膜室6B的構成材料採用對從紅外線燈22所照射的紅外線的透射性優異的紅外線透射材料的石英玻璃，故此達成可將在隔著成膜室6B的下部容器62的底面對基板10加熱時的由下部容器62的底面吸收紅外線的吸收程度抑制在必要之最小限度的效果。
此外，若成膜室6B當中至少下部容器62B的底面的構成材料設為紅外線透射材料的石英玻璃，則可發揮上述效果。
又，就紅外線透射材料而言，除了石英玻璃以外，例如還可想到以下材料。由於硼矽酸玻璃(borosilicate glass)、藍寶石(sapphire)、氟化鈣(calcium fluoride)、氟化鋇(barium fluoride)、氟化鎂(magnesium fluoride)、氟化鋰(lithium fluoride)等對於近紅外線的透射率較高，因此可考慮作為石英玻璃以外的紅外線透射材料。亦即，若成膜室6B的構成材料含有：石英玻璃、硼矽酸玻璃、藍寶石、氟化鈣、氟化鋇、氟化鎂、及氟化鋰當中至少一個即可。
另外，在實施形態2的成膜裝置12也可與實施形態1同樣，採用與輸送帶52吸收紅外線有關的上述第一及第二對策的至少一個對策。
再者，在實施形態2的成膜裝置12亦可與實 施形態1同樣，就從紅外線照射器2照射的紅外線的波長，採用上述第一變形例(包含實施形態1所敘述的具體設定)。
另外，本發明係能夠在其發明的範圍內可自由組合各實施形態、或是將各實施形態加以適當變形或省略。
雖已詳細說明了本發明，但上述說明在所有的樣態上僅為例示，本發明並不限定於此。未例示出的無數的變形例應理解為在並未脫離本發明的範圍可想到者。
1‧‧‧薄膜形成噴嘴
1S‧‧‧噴射面
2‧‧‧紅外線照射器
6A‧‧‧成膜室
7‧‧‧氣簾
10‧‧‧基板
11‧‧‧成膜裝置
21‧‧‧燈載置台
22‧‧‧紅外線燈
51‧‧‧輥
52‧‧‧輸送帶
53‧‧‧輸送裝置
61‧‧‧上部容器
62‧‧‧下部容器
63‧‧‧開口部
MT‧‧‧原料霧

Claims (4)

  1. 一種成膜裝置，係具備：基板載置部，係載置著基板；加熱機構，係設置成與前述基板載置部隔著距離，具有紅外線燈，且執行從前述紅外線燈照射紅外線而加熱前述基板的加熱處理；以及霧噴射部，係執行將使原料溶液霧化而得的原料霧噴射在前述基板之表面的霧噴射處理；同時執行利用前述加熱機構所進行的前述加熱處理與利用前述霧噴射部所進行的前述霧噴射處理，藉此在前述基板的表面形成薄膜。
  2. 如申請專利範圍第1項所述之成膜裝置，其中，更具備有於內部收容有前述基板、前述加熱機構及前述霧噴射部的成膜室。
  3. 如申請專利範圍第1項所述之成膜裝置，其中，更具備有於內部收容有前述基板及前述霧噴射部的成膜室，前述加熱機構係配置在前述成膜室外，且隔著前述成膜室執行前述加熱處理，前述成膜室的構成材料採用對於從前述加熱機構的前述紅外線燈所照射的紅外線具有優異的透射性的紅外線透射材料。
  4. 如申請專利範圍第3項所述之成膜裝置，其中，前述紅外線透射材料含有石英玻璃、硼矽酸玻璃、 藍寶石、氟化鈣、氟化鋇、氟化鎂、及氟化鋰當中至少一者。
TW107128819A 2018-06-08 2018-08-17 成膜裝置 TWI680806B (zh)

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US20210187543A1 (en) 2021-06-24
KR102487935B1 (ko) 2023-01-13
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CN112135924A (zh) 2020-12-25
KR20210005221A (ko) 2021-01-13

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