TWI677585B - Organic thin film forming apparatus and organic thin film forming method - Google Patents

Abstract

Provided is an organic thin film manufacturing apparatus capable of stably emitting vapor. It is an organic thin film manufacturing device (10) for heating an organic material (37) by supplying heat to an evaporation container (33) and releasing steam, and is calculated based on the growth rate of an organic thin film formed on a film formation object (15). The calculated temperature representing the temperature of the organic material (37) is taken out, and the measured temperature of the evaporation container (33) is compared with the calculated temperature, so that the supply speed of the heat supplied to the evaporation container (33) changes in accordance with the temperature deviation. Since the change in heat is small, the release of steam is stable. Since the change in heat is reduced if the growth rate is measured close to the target growth rate, the release of steam is stable.

Description

Organic thin film manufacturing device and method

The present invention relates to a technology for forming an organic thin film, and particularly to a technology for controlling the growth rate of an organic thin film and forming an organic thin film.

The reference numeral 100 in FIG. 4 is an organic thin film manufacturing apparatus of the prior art, and is provided with a vacuum tank 113. An evaporation source 112 is arranged inside the vacuum tank 113.

The evaporation source 112 is provided with an evaporation container 133, and at a position above the evaporation container 133, the film formation target substrate 115 carried into the vacuum tank 113 is passed or arranged.

The evaporation container 133 is hollow, and an organic material 137 made of a powdery organic compound is arranged in the hollow inside.

A heating device 134 is provided at the evaporation container 133, and the heating device 134 is connected to a heating power source 145.

The inside of the vacuum tank 113 is evacuated by the vacuum exhaust device 128 to form a vacuum atmosphere, and the heating device 134 is energized by the heating power source 145 to generate heat, and the heating device 134 that generates heat is used as a heating device. The evaporation container 133 is heated to raise the temperature, and the organic material 137 disposed inside the evaporation container 133 is heated by the heated evaporation container 133.

If the organic material 137 is heated above the evaporation temperature, it is evaporated (including sublimation), and a large amount of the vapor of the organic material 137 is released into the evaporation container 133.

At the position of the evaporation container 133 opposite to the film formation target substrate 115, a discharge hole 138 is provided, and the generated vapor is discharged from the discharge hole 138 into the vacuum tank 113. If the film is reached, On the surface of the target substrate 115, a thin film of the organic material 137 grows at the portion.

In the organic thin film manufacturing apparatus 100, a growth rate control circuit 114 that controls the growth rate of the thin film of the organic material 137 is arranged outside the vacuum tank 113.

If the processing procedure for controlling the growth rate by the growth rate control circuit 114 is described, a film thickness sensor 131 is provided inside the vacuum tank 113, and the film thickness sensor 131 is provided at The film thickness measuring device 141 in the growth rate control circuit 114 is connected.

The film thickness sensor 131 is disposed at the side of the film formation target substrate 115, and the vapor from the organic material 137 emitted from the evaporation source 112 is connected to the film target substrate 115 and the film thickness sensor 131. And into In order to grow the thin film on the film formation target substrate 115 and the film thickness sensor 131, a signal representing the film thickness detected by the film thickness sensor 131 is output to the film thickness measuring device 141 for film thickness measurement. The device 141 obtains the growth rate of the taken-out film according to the input film thickness. The obtained signal representing the growth rate is output to the speed deviation detector 142 as a measurement signal.

The ideal growth rate of the thin film grown on the surface of the film formation target substrate 115 is obtained in advance and converted into the growth rate of the surface of the film thickness sensor 131 and stored in the memory device 143 as a reference value. The reference signal representing the reference value is output from the memory device 143, and is input to the speed deviation detector 142.

At the speed deviation detector 142, the magnitude relationship between the value represented by the input reference signal (positive and negative signs and absolute value) and the value represented by the input measurement signal, and the difference between the two When the value is obtained, the deviation signal representing the deviation, which is an absolute value with a sign, is output from the speed deviation detector 142 to the heating power source 145.

When the deviation signal represents that the growth rate represented by the measurement signal is faster than the growth rate represented by the reference signal, heating the power supply 145 reduces the current output to the heating device 134 and causes evaporation. The amount of vapor generated by the organic material 137 inside the source 112 is reduced, and the growth rate of the film formation target substrate 115 and the film thickness sensor 131 is slowed.

On the other hand, when the growth rate represented by the benchmark signal is slower than the growth rate represented by the benchmark signal At this time, the current output to the heating device 134 is increased, and the amount of vapor generated by the organic material 137 inside the evaporation source 112 is increased, so that the growth rate of the film formation target substrate 115 and the film thickness sensor 131 is changed. fast.

In this way, by adjusting the value of the current supplied to the heating device 134, the variation in the amount of steam generated from the organic material 137 is reduced, and the amount of steam generated is maintained at a constant value. As a result, the growth rate is It is maintained at the reference value.

The amount of current being increased and the amount of current being reduced are proportional to the value of the deviation. When the absolute value of the deviation is large, the control is made to make the deviation closer to 0 faster.

However, in the organic thin film manufacturing apparatus 100 of the above-mentioned prior art, even if the current value supplied from the heating power source 145 to the heating device 134 is changed, the temperature change of the evaporation container 133 may be changed relative to the current value change. Delayed issue.

In addition, even if the delay of the temperature of such a container is solved, there is a problem that the temperature change of the organic material 137 is delayed relative to the temperature change of the evaporation container 133, especially when it is adjusted by the current value. When the temperature of the evaporation container 133 is close to the target temperature at which the desired evaporation rate can be obtained, the change in the value of the supplied current is too large to stabilize to the target temperature, and as a result, the evaporation rate varies.

[Prior technical literature] [Patent Literature]

[Patent Document 1] WO2015 / 182090

The present invention was created by the present invention to solve the problems of the prior art, and an object thereof is to provide an organic thin film manufacturing apparatus capable of obtaining a stable evaporation rate.

In order to solve the above-mentioned problems, the present invention is an organic thin film manufacturing apparatus, comprising: a vacuum tank; and an evaporation container configured with an organic material and heated to release the vapor of the organic material to the vacuum. Inside the tank; and a heating device, which supplies heat to the evaporation container and heats it; and a growth rate controller, which controls the release of the steam, and the growth rate controller, which includes: a heat controller, The heat supplied by the heating device to the evaporation container is controlled; and the growth rate measuring device measures the growth rate of the organic thin film on which the vapor of the organic material released from the evaporation container grows on the film-forming object, And output as the measured growth rate; and a temperature measuring device that measures the temperature of the evaporation container and outputs it as the measured temperature; and a speed deviation detector that takes out the previously measured measured growth rate and Speed deviation of the deviation between the set reference speed; and the converter, is There is set the speed deviation converting the organic materials represented by the temperature of the temperature calculating conversion relationship; and The temperature deviation detector obtains a temperature deviation which is a deviation between the inputted calculated temperature and the measured temperature, and makes the measured temperature approach the calculated temperature based on the value of the temperature deviation. In order to change the amount of heat supplied to the evaporation container by the heating device, the conversion relationship is changed so that the rate of change in the amount of heat supplied to the evaporation container is changed in accordance with the value of the temperature deviation. Make settings.

The present invention is an organic thin film manufacturing apparatus, in which a reference temperature and a change temperature are set in advance at the growth rate controller, and the growth rate controller is used to obtain the multiplied value for the speed deviation. The value after calculating the proportionality coefficient is added to the proportional temperature at the aforementioned reference temperature, and the aforementioned conversion relationship is set so that when the value of the aforementioned proportional temperature is closer to the value of the aforementioned reference temperature than the value of the aforementioned changed temperature, the aforementioned The calculated temperature is set to a temperature closer to the reference temperature than the proportional temperature.

In addition, the present invention is an organic thin film manufacturing apparatus, wherein the conversion relationship is set to calculate the temperature when the value of the proportional temperature is further from the reference temperature than the value of the change temperature. It is set to a temperature farther from the reference temperature than the proportional temperature.

The present invention is an organic thin film manufacturing apparatus, in which a reference temperature and a change temperature are set in advance at the growth rate controller, and the growth rate controller is used to obtain the multiplied value for the speed deviation. The value after calculating the proportionality coefficient is added to the proportional temperature at the aforementioned reference temperature, and the aforementioned conversion relationship is set as the value of the aforementioned proportional temperature When the value is farther from the reference temperature than the value of the change temperature, the calculated temperature is set to a temperature farther from the reference temperature than the proportional temperature.

The present invention is an organic thin film manufacturing apparatus, wherein the heating device heats the evaporation container with the heat supplied to the evaporation container and heats the evaporation container to heat the organic material.

The present invention is an organic thin film manufacturing apparatus, wherein the evaporation container is disposed inside the vacuum tank.

The present invention is an organic thin film manufacturing apparatus, which includes: a discharge hole, which is arranged in the vacuum tank and allows the vapor to be released; and a film thickness sensor, which is evacuated by the vapor. The organic thin film is formed, and based on the film thickness of the organic thin film on the film thickness sensor, the measured growth rate is obtained. The organic thin film manufacturing apparatus is provided with a shutter, which is located at a blocking place and Moving between arrival places, the blocking place is located between the release hole and the film thickness sensor, and the arriving place is different from the blocking place, and is formed when the gate is located in the blocking place. In the case of an interruption site, the vapor can reach the film formation object, but cannot reach the film thickness sensor. When the gate is located at the arrival site, the vapor can reach the film formation. The object and the film thickness sensor.

The present invention is an organic thin film manufacturing apparatus, wherein, during a blocking period where the gate is located at the blocking place and a period during which the gate is arriving at the reaching place, A period is provided in which the measurement temperature is set to a constant value.

The present invention relates to a method for manufacturing an organic thin film, in which an evaporation container heated by being supplied with heat heats an organic material disposed in the evaporation container and generates steam from the organic material to reach the vapor. An organic thin film manufacturing method for forming an organic thin film on the surface of a film forming object, which is characterized by measuring the growth rate of the organic thin film on the film forming object and measuring the growth speed and the temperature of the evaporation container. The temperature is measured, and the speed deviation between the preset reference speed and the measured growth temperature is determined. The relationship between the speed deviation and the temperature is added to the correlation relationship. To convert the speed deviation into a calculated temperature so that the measured temperature is close to the calculated temperature, to change the amount of heat supplied to the evaporation container, and set the rate of change of the heat supplied to the evaporation container to The value corresponding to the value of the temperature deviation, which is the calculated temperature and measured as described above. The deviation between the measured temperatures of the temperature of the evaporation vessel.

The present invention is a method for manufacturing an organic thin film, in which a reference temperature and a change temperature are set in advance, and a temperature calculated by adding a result obtained by multiplying a proportionality coefficient to the speed deviation to the temperature at the reference temperature is calculated. Proportional temperature. When the value of the proportional temperature is closer to the reference temperature than the value of the change temperature, the conversion relationship is to convert the speed deviation into a temperature closer to the reference temperature than the proportional temperature. The temperature was calculated as described above.

The invention is a method for manufacturing an organic thin film, wherein when the value of the proportional temperature is farther from the reference temperature than the value of the change temperature, When the temperature is in degrees, the aforementioned conversion relationship is converted from the aforementioned speed deviation into the aforementioned calculated temperature which is set at a temperature farther from the reference temperature than the proportional temperature.

The present invention is a method for manufacturing an organic thin film, in which a reference temperature and a change temperature are set in advance, and a temperature calculated by adding a result obtained by multiplying a proportionality coefficient to the speed deviation to the temperature at the reference temperature is calculated. Proportional temperature. When the value of the proportional temperature is farther from the reference temperature than the value of the change temperature, the conversion relationship is to convert the speed deviation into a temperature that is further away from the reference temperature than the proportional temperature. The temperature was calculated as described above.

The present invention relates to a method for manufacturing an organic thin film, wherein the temperature of the evaporation container in which the organic material for generating the vapor is arranged is measured, and the measurement temperature is set as the temperature at which the film thickness sensor is located. The growth rate of the grown organic thin film is obtained by taking out the measured growth rate.

The present invention is a method for manufacturing an organic thin film, wherein the supply rate to the evaporation container is changed by changing the rate of change of electric power supplied to a heating device that heats the evaporation container and heats the organic material. The rate of change of heat is changed.

The invention relates to a method for manufacturing an organic thin film, wherein a gate for moving between a blocking place and an arrival place is provided, and the blocking place is located in a discharge hole where the steam is discharged and the film thickness sensor. The place where the vapor can reach the film-forming object but cannot reach the film thickness sensor, the place of arrival is the same as the place where the film is cut off. In a different place, and the vapor can reach the film-forming object and the film thickness sensor, a blocking period and an arrival period are set alternately, and the blocking period is such that the gate position is at the blocking position , So that the vapor reaches the film formation object but does not reach the film thickness sensor, during the arrival period, the gate is positioned at the arrival place, and the vapor reaches the film formation object and The aforementioned film thickness sensor.

The present invention is a method for producing an organic thin film, wherein a period for setting the measurement temperature to a constant value is set in a cycle formed by the interruption period and the arrival period adjacent to the interruption period. .

According to the present invention, since the measured temperature of the evaporation container that heats up the organic material by heat conduction and the calculated temperature of the representative organic material temperature obtained from the measured growth rate are compared, the two are compared, and The rate of change of the heat supplied to the evaporation vessel by the heating device is controlled, so that the rate of change of the heat does not become too large or too small, and the vapor is stably emitted from the organic material.

In the control method based on the prior art, it is difficult to control the growth rate with respect to a specific material or external disturbance. However, according to the present invention, it can be performed without being disturbed by the material or external disturbance. Affected controls.

10‧‧‧Organic thin film manufacturing equipment

13‧‧‧Vacuum tank

14‧‧‧Growth speed controller

15‧‧‧ Film forming object

16‧‧‧ Thermal controller

17‧‧‧Temperature calculator

31‧‧‧ film thickness sensor

32‧‧‧Temperature Tester

33‧‧‧Evaporation container

35‧‧‧Gate

37‧‧‧ Organic Materials

40‧‧‧Growth Tester

41‧‧‧ Film Thickness Tester

42‧‧‧speed deviation detector

44‧‧‧ converter

45‧‧‧Temperature deviation detector

46‧‧‧Heating power

49‧‧‧memory device

FIG. 1 is a block diagram for explaining an organic thin film manufacturing apparatus of the present invention.

[Fig. 2] A graph for explaining the difference between the calculated temperature and the proportional temperature.

[Figure 3] A graph showing the relationship between time and measured temperature.

4 is a block diagram for explaining an organic thin film manufacturing apparatus of the prior art.

FIG. 5 is a block diagram for explaining an organic thin film manufacturing apparatus for intermittent control.

[Fig. 6] It is a graph showing an example of the relationship between the growth rate on the film-forming object of the organic thin film manufacturing apparatus and the passage of the measured temperature with respect to time.

The reference numeral 10 in FIG. 1 represents an organic thin film manufacturing apparatus of the present invention.

This organic thin film manufacturing apparatus 10 includes a vacuum tank 13, and an evaporation source 12 is disposed inside the vacuum tank 13.

The evaporation source 12 includes a hollow evaporation container 33, and an organic material 37 made of a powdery organic compound is arranged in the hollow portion.

Organic thin film manufacturing apparatus 10 including a main control device 30, and the growth rate controller 14.

The main control device 30 controls the growth rate controller 14 and the growth rate controller 14 is a rate of release of steam (the amount of steam emitted per unit time from the evaporation container 33 to the inside of the vacuum tank 13). Amount) for control.

A heating device 34 is provided at the evaporation source 12. The growth rate controller 14 includes a heat controller 16 and a heating device 34. If power is supplied from a heating power source 46 disposed at the heat controller 16, the evaporation vessel 33 is heated to raise the temperature thereof. The organic material 37 inside is heated by heat conduction through the heated evaporation container 33.

Here, if the heating device 34 is energized by the heating power source 46, it generates heat, and heats the evaporation container 33 by heat conduction to increase the temperature.

A vacuum exhaust device 28 is connected to the vacuum tank 13. If the vacuum exhaust device 28 is operated and the inside of the vacuum tank 13 is evacuated, a vacuum atmosphere is formed inside the vacuum tank 13.

The inside of the evaporation container 33 is evacuated by the vacuum exhaust device 28 or another vacuum exhaust device, and a vacuum atmosphere is formed. When the organic material 37 is placed in a vacuum atmosphere, if the organic material 37 is heated to a temperature higher than the evaporation temperature of the organic material 37 by the heating device 34 (herein, the evaporation temperature includes the sublimation temperature), Vapor is generated from the organic material 37.

At this time, if the vacuum atmosphere inside the vacuum tank 13 and the vacuum atmosphere inside the evaporation container 33 are connected, the product produced by the evaporation container 33 The vapor of the raw organic material 37 is discharged from the evaporation container 33 into the vacuum tank 13. Here, a vapor release hole 38 is formed on the top plate of the evaporation container 33. Since the evaporation container 33 is disposed inside the vacuum tank 13, the vacuum atmosphere inside the vacuum tank 13 and the vacuum inside the evaporation container 33 are formed. The atmosphere is connected. Therefore, the vapor generated from the organic material 37 is released from the inside of the evaporation container 33 to the inside of the vacuum tank 13 through the vapor release hole 38.

The film formation position reached by the vapor emitted from the evaporation container 33 inside the vacuum tank 13 is a device provided with a film formation object or a film formation object is passed through the film formation position Of the device. Here, at the film-forming position reached by the vapor, a substrate holder 39 is provided as a device on which the film-forming object is arranged, and the film-forming object indicated by the element symbol 15 is held on the substrate. 39 supports.

A film thickness sensor 31 for measuring the film thickness of a thin film formed on the surface is connected to the growth rate controller 14.

The film thickness sensor 31 is disposed inside the vacuum tank 13 and does not shield the vapor reaching the film formation object 15 from reaching, and the vapor emitted from the vapor release hole 38 can reach the film thickness sensor 31. Everywhere. Therefore, the vapor emitted from the same vapor emission source (here, the evaporation container 33) arranged in the vacuum tank is connected to the film object 15 and the film thickness sensor 31.

A gate 35 is provided inside the vacuum tank 13.

The gate 35 is connected to a motor 36, and the motor 36 is controlled by a motor control device 51.

If the control program is described, the motor control device 51 is connected to the main control device 30, and if the main control device 30 operates the motor 36 through the motor control device 51, the gate 35 is in the vacuum tank The position can be changed by moving within 13. In this example, the gate 35 is configured to be able to be located at an interruption place between the film thickness sensor 31 and the vapor release hole 38, and can be moved from the interruption place and positioned at a position opposite to the interruption place. Different places.

When the gate 35 is located at the blocking place, the vapor emitted from the vapor release hole 38 will not reach the film thickness sensor 31 even if it reaches the film formation object 15, even if the organic thin film is in the The film formation target 15 grows, and the organic thin film does not grow on the film thickness sensor 31.

On the other hand, if the shutter 35 moves from the blocking place and is located at a place different from the blocking place, the steam emitted from the steam release hole 38 is tied to the film object 15 and the film thickness sensor. At 31 points, the organic thin film is grown on the surface of the film formation object 15 and the surface of the film thickness sensor 31. The place where the shutter 35 grows the organic thin film on the surface of the film formation object 15 and the surface of the film thickness sensor 31 is referred to as an "arrival place".

When the vapor released from the vapor release hole 38 reaches the film formation object 15 and the film thickness sensor 31, the growth rate of the organic thin film formed at the film thickness sensor 31 (assuming "growth speed" is There is a proportional relationship between the growth rate of the film thickness per unit time) and the growth rate of the organic thin film formed at 15 film-forming objects. The value of the proportionality constant is measured based on the film thickness measured in advance. The value and measurement time have been calculated. When the shutter 35 moves from the blocking position, it is formed on the film formation object 15 The film thickness and growth rate of the organic thin film can be calculated from the film thickness and growth rate of the organic thin film formed at the film thickness sensor 31. In the following description, it is assumed that the gate 35 is not located at the blocking place.

The growth rate controller 14 includes a film thickness measuring device 41, and the film thickness sensor 31 is connected to the film thickness measuring device 41.

The film thickness sensor 31 outputs a signal corresponding to the film thickness of the attached organic thin film to the film thickness measuring device 41. The film thickness measuring device 41 is based on the input signal representing the film thickness, and The measurement time is used to obtain the growth rate of the film thickness on the film thickness sensor 31, and a signal representing the value is output as the growth rate of the film thickness sensor 31. With the film thickness sensor 41, Measurement of the growth rate of the film-forming object 15 The film-forming speed was obtained.

Therefore, the film thickness sensor 31 and the film thickness measuring device 41 constitute a film growth rate measuring device that measures the growth rate of the thin film on the film formation object 15 and outputs the measured value as the measurement growth rate. The reference numeral 40 in FIG. 1 represents a growth rate measuring device.

The growth rate controller 14 includes a temperature calculator 17. The temperature calculator 17 is provided with a speed deviation detector 42 which is a signal representing a measurement of the growth rate, and is input to the speed deviation detector 42.

The speed deviation detector 42 is, for example, a memory device 49 in which a reference speed representing a reference value representing the growth rate of the film-forming object 15 is set in advance. The speed deviation detector 42 measures the growth speed and the reference speed. The speed deviation (here, the value of "deviation" is assumed to be formed by the absolute value and the sign representing positive and negative) is calculated and substituted The speed deviation signal obtained from the meter is output. Regarding the reference speed, a memory device 49 is provided at the temperature calculator 17. The reference speed is stored in the memory device 49 and is output from the memory device 49 to the speed deviation detector 42.

When a signal representing the growth rate of the film thickness sensor 31 is input to the speed deviation detector 42 from the film thickness measuring device 41, the reference value of the growth rate of the film thickness sensor 31 may be used as a reference. The speed is set in advance at the speed deviation detector 42.

The temperature calculator 17 includes a converter 44, and the growth rate controller 14 includes a heat controller 16.

A signal representing the speed deviation is output to the converter 44.

The relationship between the speed deviation and the temperature of the organic material has been obtained in advance, and is set in the converter 44 as a conversion relationship representing the calculated temperature that converts the speed deviation into the temperature representing the organic material 37.

The converter 44 converts the speed deviation represented by the input signal into a calculated temperature representing the temperature of the organic material 37 through a conversion relationship, and outputs a signal representing the calculated temperature to the heat controller 16. The calculated temperature is obtained based on the measured growth rate. Therefore, the calculated temperature represents the temperature of the organic material.

A temperature deviation detector 45 is provided at the heat controller 16, and a signal representing a calculated temperature is input to the temperature deviation detector 45.

A temperature measuring device 32 is provided at the evaporation container 33. With the temperature measuring device 32, the temperature of the evaporation container 33 is measured and represents the measured temperature. The signal of degree is output from the temperature measuring device 32 to the thermal controller 16 and the signal representing the measured temperature is input to the temperature deviation detector 45. The temperature deviation detector 45 calculates a temperature deviation, and the temperature deviation is constituted by a sign representing the magnitude of the relationship between the calculated temperature and the measured temperature and the sign of the magnitude relationship between the calculated temperature and the measured temperature. Here, the temperature measuring device 32 is a thermocouple.

The heat controller 16 supplies power to the heating device 34 and supplies heat from the heating device 34 to the organic material 37 to raise the temperature of the organic material 37. The heat controller 16 is based on the calculated temperature deviation. The power supplied to the heating device 34 is increased or decreased, and the organic thin film formed at the film-forming object 15 is grown at a reference speed so that the heating device 34 is supplied to the organic material 37. The change rate of the amount of heat (the so-called change rate is the change amount / time of the supplied heat) is controlled.

For example, when the amount of heat supplied by the heating device 34 is increased or decreased at a rate of change Q ₁ (cal / sec) which is a constant value, the growth rate is changed to a reference rate, and is changed to The rate of change of the different values Q ₂ (cal / s) (Q ₁ ≠ Q ₂ ).

Here, a signal representing a temperature deviation is input to the heating power source 46. Based on the value of the temperature deviation and the magnitude relationship between the calculated temperature and the measured temperature, the power output from the heating power source 46 is supplied to the heating device 34. The rate of change of the amount (= change amount / time of the supplied power) is changed. By changing the rate of change in the amount of power supplied, the rate of change in the amount of heat supplied to the organic material 37 by the heating device 34 The system was changed.

In this way, in the present invention, the thermal controller 16 is used to compare the calculated temperature calculated by the converter 44 with the measured temperature measured by the temperature measuring device 32, and take it out in accordance with the required value. The temperature deviation changes the rate of change of the electric power supplied to the heating device 34, and calculates the temperature. Since the change is a value corresponding to the value of the measured growth rate, the heat controller 16 changes the value to The changed calculation speed is used as the variability comparison target temperature, and the temperature deviation that is the difference between the comparison target temperature and the measurement temperature is obtained, and the speed of power change is controlled.

Instead of using control based on temperature deviation, it is also possible to change the rate of change of the supplied heat based on the speed deviation.

If the content of this control is explained, first, the reference speed inputted into the speed deviation detector 42 is ideal when the organic material 37 in the evaporation container 33 is evaporated at a desired evaporation rate. At the reference temperature of the temperature, the growth rate of the organic thin film grown on the surface of the film formation object 15.

Therefore, when the measured growth speed output from the growth speed measuring device 40 is equal to the reference speed, a speed deviation representing a value of 0 is output from the speed deviation detector 42, and the speed deviation is converted into The calculated temperature having the same reference temperature is input to the heat controller 16.

If it is assumed that the temperature of the evaporation container 33 is equal to the temperature of the organic material 37 inside the evaporation container 33, the value of the speed deviation is At 0, since the temperature of the evaporation container 33 is the reference temperature, the measurement temperature is the reference temperature, and the temperature deviation between the calculated temperature and the measurement temperature is 0.

In contrast, when the temperature of the evaporation container 33 and the temperature of the organic material 37 inside the evaporation container 33 are not equal, even if the speed deviation value is 0, the temperature deviation between the calculated temperature and the measured temperature is calculated. It will not become 0. When the measurement temperature is higher than the calculated temperature, the rate of change of heat is changed so that the measurement temperature is decreased. When the measurement temperature is lower than the calculated temperature, the measurement temperature is increased. Way to change the rate of change of heat.

In this way, the heating power source 46 changes the power supplied to the heating device 34 with a change rate corresponding to the sign and magnitude of the temperature deviation. When the temperature deviation is 0, the change rate becomes 0. The size of the power being supplied will not be changed but maintained.

Each deviation is composed of a sign and an absolute value, and the speed deviation is also the same, and it is possible to know which of the measured growth speed and the reference speed is larger based on the sign.

When the speed deviation represents that the measured growth rate is greater than the reference speed, the conversion relationship set at the converter 44 is set to convert the speed deviation into a change speed that causes the heat supplied by the heating device 34 Reduce the calculated temperature.

When the speed deviation represents that the measured growth speed is smaller than the reference speed, the conversion relationship is set to convert the speed deviation into a heating The calculated temperature at which the rate of change of the heat supplied by the device 34 increases. As a result, the temperature change becomes large.

More specifically, the growth speed controller 14 is set with a change temperature in advance. If the speed deviation is multiplied by a pre-set scaling factor, the value is added to the reference temperature as the value. Proportional temperature is a conversion relationship. When the proportional temperature calculated based on the input speed deviation is closer to the reference temperature than the set change temperature, the calculated speed deviation is converted. The temperature is set to a temperature closer to the reference temperature than the proportional temperature calculated from the speed deviation. As a result, the temperature change system becomes small.

When the proportional temperature calculated from the input speed deviation is the same temperature as the set change temperature, the calculated temperature is set as the reference temperature.

The change temperature is set to a temperature higher than the reference temperature and a temperature lower than the reference temperature, and a proportional temperature higher than the reference temperature is compared with a change temperature higher than the reference temperature. The proportional temperature lower than the reference temperature is compared with the change temperature lower than the reference temperature.

In the conversion relationship, when the proportional temperature calculated based on the input speed deviation is further away from the reference temperature than the set change temperature, the calculated temperature is converted from the input speed deviation. It is set to a temperature farther from the reference temperature than the proportional temperature calculated from the speed deviation.

This relationship is shown in the graph in Figure 2. This figure 2 The horizontal axis of the graph represents the speed deviation, and the value of the origin of the horizontal axis is the proportional temperature and the calculated temperature when the speed deviation is 0, that is, the reference temperature. Therefore, the vertical axis represents the temperature between the difference between the proportional temperature and the reference temperature or the difference between the change temperature and the reference temperature.

The graph in FIG. 2 is a case where the speed deviation is a value obtained by subtracting the measured growth speed from the reference speed and also an absolute value with a sign (the speed deviation = the reference speed-the measured growth speed). ) For display. The symbol S in FIG. 2 is a curve representing the relationship between the speed deviation and the temperature obtained by subtracting the reference temperature from the proportional temperature obtained from the speed deviation, and the symbol H is a curve representing the relationship between the speed deviation Relationship of straight lines.

The symbol T ₁ is the difference between the reference temperature and the change temperature at the higher temperature side and the reference temperature. The symbol T ₂ is the difference between the reference temperature and the change temperature at the lower temperature side and the reference temperature. temperature. The symbols E ₁ and E _{2 are} the speed deviations of the proportional temperature obtained by multiplying the proportional coefficient and the calculated temperature obtained according to the conversion relationship as the change temperature giving the same value. The curve S and the straight line H are in Points (E ₁ , T ₁ ) and points (E ₂ , T ₂ ) intersect.

The calculated proportional temperature is the range of the vertical axis closer to the origin (reference temperature) than the changed temperature. It is a temperature range closer to the origin than the temperatures T ₁ and T _2, and the speed deviation is given to the temperature range. This is a range closer to the origin than the speed deviations E ₁ and E ₂ given to the change temperature. In the speed deviation in this range, when the difference between the calculated temperature and the reference temperature and the difference between the proportional temperature and the reference temperature are obtained based on the same speed deviation, the calculated temperature becomes closer to the proportional temperature than the proportional temperature. origin.

Therefore, when the temperature of the organic material 37 is closer to the reference temperature than the changed temperature, the change in the amount of heat supplied to the heating device 34 is a case where the change is more than a change proportional to the speed deviation. It becomes smaller, and there is a case where the organic material 37 does not change beyond a temperature at which the speed deviation becomes zero.

The calculated proportional temperature is a range farther from the vertical axis of the origin (reference temperature) than the changed temperature. It is a temperature range farther from the origin than the temperatures T ₁ and T _2, and the speed deviation is given to this temperature range. This is a range farther from the origin than the speed deviations E ₁ and E ₂ given to the change temperature. In the speed deviation in this range, when the difference between the calculated temperature and the reference temperature and the difference between the proportional temperature and the reference temperature are obtained based on the same speed deviation, the calculated temperature becomes farther than the proportional temperature. origin.

Therefore, when the temperature of the organic material 37 is away from the reference temperature, the amount of change in the amount of heat supplied to the heating device 34 becomes larger than when the temperature is changed by a magnitude proportional to the speed deviation. Since the organic material 37 is rapidly approaching the temperature at which the speed deviation becomes zero, the temperature of the organic material 37 is stabilized more quickly.

The graph in Fig. 3 (a) shows the case where the measured temperature approaches the reference temperature when the temperature is lower than the reference temperature. The graph in Fig. 3 (b) shows the case where the measured temperature changes from the reference temperature. The situation where the high temperature is close to the reference temperature is shown, and the curve representing the relationship between time and the measured temperature finally coincides with the straight line representing the reference temperature.

In this embodiment, the signal representing the measured growth rate output from the growth rate measuring device 40 is obtained by removing high-frequency components through the filter 48 and inputting it to the speed deviation detection in the temperature calculator 17. At the device 42, the value of the speed deviation is such that no unnecessary changes are made.

Further, in the present invention, the control of the power output from the heating power supply 46 may be performed intermittently, or it may be configured to measure and output the growth rate on the film thickness sensor 31 at a certain time interval. Growth rate. In this case, there is no time for measuring the growth rate. Since it is not necessary to grow the organic thin film on the surface of the film thickness sensor 31, the system only needs to make the time during which the growth rate is not measured. The shutter 35 is located at the blocking place, and it is allowed to move from the blocking place during measurement and grow the film on the film thickness sensor 31. The organic thin film is grown on the film thickness sensor 31. Since the time period is shorter, the lifetime of the film thickness sensor 31 is longer.

If FIG. 5 is used to describe an organic thin film manufacturing apparatus that performs intermittent control, this organic thin film manufacturing apparatus 10A is a device provided with an on-off controller 43 at the organic thin film manufacturing apparatus 10 of FIG. 1 when the vapor is reaching During the period of 15 places of the same type of film formation object, the gate 35 is opened and closed. In the closed state, the vapor system does not reach the film thickness sensor 31. In the open state, the vapor system reaches the film thickness. At the sensor 31, the time taken for the vapor to reach the film thickness sensor 31 is shorter than that of the film formation object 15 located in the same vacuum tank 13.

In the memory device 49, a time period during which the shutter 35 is opened and a time period during which the shutter 35 is closed are memorized. It is output to the opening / closing controller 43 as a set time. The opening / closing controller 43 outputs a control signal to the motor control device 51 via the main control device 30, and the opening and closing of the gate 35 is controlled.

During the arrival period, the gate 35 is opened. When the vapor arrives and the organic thin film grows on the surface of the film thickness sensor 31, the film formed according to the time of the arrival period and the thin film formed between the arrival period. The thickness refers to the measurement growth rate at which the film thickness sensor 31 and the film formation object 15 can be obtained.

The measured measured growth rate is compared with the reference speed. The speed deviation and the calculated temperature are obtained. The temperature deviation is output to the heating power source 46 and the electric power system to the heating device 34 is made. change.

Therefore, the electric power supplied to the heating device 34 is changed during the arrival period, and is maintained at the changed value during the interruption period.

On the surface of the film thickness sensor 31, the growth of the thin film is started at the beginning of the arrival period, and the growth of the thin film is stopped at the end of the arrival period.

The growth rate can be measured from the start time of one arrival period to the end time, or it can be configured to average the film thickness measurement values of a plurality of arrival periods and obtain the measured growth rate.

Here, it is assumed that the organic thin film manufacturing apparatus 10A is configured to calculate the measured growth rate at the end of the arrival period based on the film thickness increase amount during the arrival period, and input the measured growth rate to the growth rate controller 14. The value of the measured growth rate is changed at the end of each arrival period.

The graph of FIG. 6 shows an example of the relationship between the growth rate on the film-forming object of the organic thin film manufacturing apparatus 10A and the elapsed time with respect to the measurement temperature.

In the graph of FIG. 6, the arrival period and the interruption period next to the arrival period are taken as a cycle, and for example, the first time t _{1 is} the start time of the arrival period in a cycle. The measurement of the film thickness is started, and the measurement of the film thickness is ended at the second time t ₂ which is the end time of the arrival period, and the measured growth rate is obtained based on the grown film thickness and measurement time. The measured value of the measured growth rate is output to the temperature calculator 17 at the second time t ₂ and compared with the reference speed. The speed deviation and the calculated speed are obtained in this order. The calculated temperature is compared with the measured temperature, and the temperature deviation is obtained.

Thereafter, in order to supply electric power of a magnitude corresponding to the temperature deviation to the heating device 34, at a second time t ₂ at which the growth rate is measured, the magnitude of the rate of change of the electric power supplied to the heating device 34 is determined. The system was changed.

In contrast, in the second time t2 taken place seeking measured growth rate, as compared to the reference speed if it is assumed (with respect to the reference speed of the object to be film) and smaller at the second time t _2, since the calculated temperature The value system increases and the measurement temperature system becomes lower than the calculated temperature. Therefore, the power supply system increases and the measurement temperature system increases.

Until the fourth time t ₄ at which the growth rate is measured at the next cycle, the same value of power is supplied to the heating device 34. Therefore, if a certain period of time has elapsed, the temperature is measured. The system is kept at a certain value. That is, during the interruption period, a holding period is provided in which the temperature rise is stopped and the measurement temperature is maintained at a constant value, and the period before the third time t ₃ at which the arrival period immediately following the interruption period starts is provided. At a specific time or at a specific time before the fifth time t ₅ , the holding period is started.

Thereafter, since the value of T ₃ in the last place of a previous cycle is maintained from the start of a third time period until the next period of time T reaches the first 4. _4, it is maintained at a temperature of measurement.

On the other hand, since the temperature change of the organic material 37 with respect to the temperature change of the evaporation container 33 is delayed, even if the measurement temperature is maintained at a certain value, the measurement growth rate continues to increase.

Therefore, the measured growth rate obtained at the fourth time t ₄ becomes larger than the reference speed. In contrast to the previous cycle, the power system supplied to the heating device 34 decreases and the measured temperature system decreases. .

In this way, in one cycle, the measured temperature changes only at a certain time (here, the period other than the holding period during the interruption period), and it is maintained at a certain temperature during other times Therefore, when the measured growth rate is obtained in the next cycle, the difference between the measured growth rate and the reference rate becomes smaller.

In each of the above embodiments, although the evaporation container 33 is arranged inside the vacuum tank 13, it may be arranged in the vacuum tank 13. external.

Moreover, in the above-mentioned embodiment, although the structure is such that a resistance heating heater is used at the heating device 34, the evaporation container 33 is heated by heat conduction, and the organic material 37 is caused by heat conduction. The heated evaporation vessel 33 is heated and heated, and the temperature of the organic material 37 is controlled by controlling the amount of heat generated by the heating device 34. However, it is also possible to use an infrared lamp at the heating device 34 The tube heats the evaporation container 33 by heat radiation, or directly heats the evaporation container 33 by flowing an induced current at the evaporation container 33.

In addition, the "evaporation speed" in the above description refers to the amount of steam emitted per unit time, and does not represent the flying speed of steam.

Claims (10)

An organic thin film manufacturing device, comprising: a vacuum tank; and an evaporation container, which is configured with an organic material and is heated to release the vapor of the organic material into the vacuum tank; and a heating device, Heat is supplied to the evaporation vessel and heated; and a growth rate controller controls the release of the steam, and the growth rate controller is provided with a heat controller for supplying the evaporation device to the evaporation vessel The amount of heat is controlled; and the growth rate measuring device measures the growth rate of the organic thin film on which the vapor of the organic material released from the evaporation container grows on the film-forming object, and outputs the measured growth rate; The temperature measuring device measures the temperature of the evaporation container and outputs it as the measured temperature; and the speed deviation detector removes the difference between the measured growth rate that is input and the preset reference speed. The speed deviation of the deviation; and a converter provided to convert the aforementioned speed deviation into The conversion relationship between the calculated temperature of the aforementioned organic material temperature and the temperature deviation detector are used to obtain the temperature deviation of the deviation between the calculated temperature and the measured temperature that have been input, and based on the value of the temperature deviation In order to change the amount of heat supplied by the heating device to the evaporation container in such a way that the measured temperature is close to the calculated temperature, the heat controller is to make the rate of change of the heat correspond to the temperature deviation. The value is used to change the way and is set. The organic thin film manufacturing apparatus according to item 1 of the scope of application for a patent, wherein the heating device heats the evaporation container with heat supplied to the evaporation container and heats the evaporation container to heat the organic material. The organic thin film manufacturing apparatus according to item 1 of the scope of patent application, wherein the evaporation container is arranged inside the vacuum tank. The organic thin film manufacturing device according to any one of claims 1 to 3, wherein the organic thin film manufacturing device includes: a vent hole, which is arranged in the vacuum chamber and allows the vapor to be emitted; and a film thickness The sensor is formed with the organic thin film by the vapor. Based on the film thickness of the organic thin film on the film thickness sensor, the measured growth rate is obtained. The organic thin film manufacturing device is It is provided with a gate that can be moved and changed in position in the vacuum tank, and between the discharge hole and the film thickness sensor, the vapor is capable of reaching the formation when the gate is positioned there. The film object can not reach the blocking place at the film thickness sensor, and the vapor can reach the film formation object and the film thickness sensor when the gate is located there. The gate is configured to move between the blocking place and the arriving place. The organic thin film manufacturing device according to item 4 of the scope of the patent application, wherein the shutter is formed during the interruption period where the gate is located at the interruption place and the shutter is an arrival period when the gate is located at the arrival place. In the cycle, a period is set in which the measurement temperature is set to a constant value. An organic thin film manufacturing method, in which an evaporation container heated by being supplied with heat heats an organic material disposed in the evaporation container, generates vapor from the organic material, and causes the vapor to reach a surface of a film object. An organic thin film manufacturing method for forming an organic thin film is characterized in that it includes: measuring the growth rate of the growth rate of the organic thin film on the film-forming object and measuring temperature of the temperature of the evaporation container as A measurement step; and a step of obtaining a speed deviation between a predetermined reference speed and the measured growth temperature measured in advance; and a value representing the speed deviation with respect to the organic material A step of converting the calculated speed deviation to the calculated temperature by adding a correlation relationship of the calculated temperature of the temperature; and supplying the evaporation to the evaporation so that the measured temperature approaches the calculated temperature. The step of changing the heat at the container will change the speed of the heat supplied to the evaporation container, And others of the value of the temperature deviation value corresponding to the temperature deviation, the system calculates the deviation between the measured temperature and the measurement temperature calculated above. The method for manufacturing an organic thin film according to item 6 of the scope of application for a patent, wherein the temperature of the evaporation container in which the organic material for generating the vapor is arranged is measured, and the measurement temperature is set as the measurement temperature. The growth rate of the organic thin film grown at the sensor is obtained by taking out the measured growth rate. The method for manufacturing an organic thin film according to item 6 of the scope of the patent application, wherein the supply speed is changed by changing the rate of change of electric power supplied to a heating device that heats the evaporation container and heats the organic material. The rate of change of heat at the aforementioned evaporation container is changed. The method for manufacturing an organic thin film according to item 6 of the scope of patent application, wherein in a place between the discharge hole through which the vapor is released and the film thickness sensor, the vapor exists so as to reach the film formation Where the object is not accessible to the blocking place at the film thickness sensor, and where the vapor can reach the filming object and the place to be reached at the film thickness sensor, it is provided interactively: The gate that moves between the place and the arrival place is located at the blocking place, so that the vapor reaches the film formation target but does not reach the film thickness sensor, and the blocking period, and The gate is located at the arrival place so that the vapor reaches the film formation object and the arrival period of the film thickness sensor. The method for manufacturing an organic thin film according to item 9 of the scope of patent application, wherein the measurement temperature is set to a constant value in a cycle formed by the blocking period and the reaching period adjacent to the blocking period. Period.