201024438 六、發明說明： 【發明所屬之技術領域】 本發明係關於真空蒸鍍裝置及溫度調節方法。 本申請案係於2008年12月24曰，基於在曰本所申請之專 利申請案2〇〇8-327518號，主張優先權並在此引用其内 ' 容0 - 【先前技術】 眾所周知，真空蒸鑛法係例如在有機虹商品之製造過程 ® 巾’主要用來製造以低分子化合物作為材料之有機EL元件 之薄膜而使用。該真空蒸鑛法係在真空室内設有收容有機 材料之堆竭，將該掛場以加熱器等加熱而使有機材㈣ 化，藉而使有機材料附著於基板等並成膜。 然而’加熱器配置之偏倚、發熱量或真空室内之構件之 配置，會使得堆瑪内之有機材料之溫度分佈不肖。若掛禍 内之有機材料之溫度分佈不均，會造成有機材料氣化不 肖，故形成於基板之薄膜無法均勾。又，會使得有機材料 攀 以不均一的狀態下在坩瑪内大量地殘存。 作為解決該等問題之真空蒸鍍裝置，有下述專利文獻^ 巾所述者。該真空蒸鍍裝置係在由未經高頻感應加熱之材 質所構成之掛禍内，收容由被高頻感應加熱之材質所構成 之多數之粒狀混合物，並將該粒狀混合物以高頻加熱方式 面授拌有機材料一面加熱者。 [先前技術文獻] [專利文獻] 143630.doc 201024438 [專利文獻1]日本特開2004-3239 15號公報 【發明内容】 [發明所欲解決之問題] 然而，在先前之技術中’由於為加熱有機材料需要相當 數量之粒狀混入物’故隨著有機材料之氣化進展，有機材 料將低於粒狀混入物之高度。此時，位於粒狀混入物之間 之有機材料會被激烈加熱。因此，在有機材料低於一定量 之情形下’必須重新添加新的有機材料或更換該有機材 料’而有使生產效率或經濟性惡化之問題。 本發明係考慮該等情況而作成者，其目的在於提供一種 ® 倉b以簡易之構成謀求溫度分佈之均勻化，從而減少材料之 額外填充的真空蒸鍍裝置及溫度調節方法。 [解決問題之技術手段] 為達成上述之目的，本發明採用以下之手段。 即，本發明之真空蒸鍍裝置之特徵在於具備：真空室， 其係可收容從外部搬入之被蒸錢體；掛禍，其係設置於上 述真工至内並收容蒸錢材料；加熱源，其係加熱上述掛竭 並使上述蒸鑛材料氣化；及複數個支持部，其係分散配置 於掛禍之底部而支持掛塌’且在上述掛瑪與上述真空室之 地板部之間傳熱。 根據該構成，由於具備分散配置在㈣之底部並在上述 堆禍與上述真空室之地板部之間傳熱之複數個支持部，故 :使支持部附近之坩堝内之蒸鍍材料之溫度降低。藉由刻 低㈣分’可調整㈣内之蒸鑛材料之溫度。即， 143630.doc -4- 201024438 由於將低溫部分分散配置，可謀求蒸鍵材料之溫度之均句 化。再者’藉由使坩堝内之溫度分佈均勻化，可將蒸鍍材 料之C化量之偏差減少，故可在掛瑪内之各部位使蒸錄材 料之減少均句化。因此’可減少蒸鍵材料之額外填充。 又上述加熱源係以在上述支持部之附近使上述坩堝之 加熱量增大的方式而構成。 根據該構成，由於在支持部附近加熱量增大，故在從支 持部隔開而不會對地板部傳熱的部位，與在支持部之附近 ® 會傳熱到地板部之部位中各蒸鑛材料之溫度差減小。藉 此，可進一步謀求蒸鍍材料之溫度之均勻化。 又，上述複數個支持部之一部4，其傳熱量與其他支持 部不同。 根據該構成，由於上述複數個支持部之一部分其傳熱量 與其他之支持部不同，故可使蒸鍍材料對於相對高溫部位 之地板部之傳熱量增大，且使蒸鍍材料對於相對低溫部位 之地板u卩之傳熱量減小，從而可謀求蒸鍍材料之溫度之均 勻化再者，由於可減小蒸鍍材料對於相對低溫部位之傳 熱量，從而可謀求減少加熱器之發熱量。 又，上述複數個支持部之一部分，其截面積與其他支持 部不同。 又上述複數個支持部之一部分係以與其他之支持部之 熱傳導率不同之材料而構成。 又，上述複數個支持部之一部分係使熱傳導具有方向性 之熱阻構件介在於上述坩堝與上述地板部之間，並於其間 143630.doc 201024438 傳熱。 又’本發明之真空蒸鍍裝置具備：真空室，其係可收容 從外部搬入之被蒸鍍體；坩堝，其係設置於上述真空室内 並收谷蒸鑛材料；及加熱源，其係加熱上述掛瑪並使上述 蒸鍍材料氣化。上述加熱源係使對上述坩堝之加熱量依上 述坩堝之位置而不同。 根據該構成，由於係使加熱源對於上述坩堝之加熱量因 坩堝之位置而不同，故減小蒸鍍材料在相對高溫部位之加 熱量，且增大蒸鍍材料在相對低溫部位之加熱量，從而可 謀求蒸鍍材料之溫度之均勻化。 又，上述加熱源係使發熱量改變，而使對上述坩堝之加 熱量不同。 又，其中具備控制上述加熱源之發熱量之控制部。上述 控制部係以上述坩堝内之上述蒸鍍材料到達特定量以下為 條件，開始進行發熱調整。 根據該構成，由於以蒸鍍材料低於特定量為條件而開始 進行發熱調整，故可僅在蒸鍍材料之總量降低且溫度分佈 之偏倚加劇之區域進行溫度調節。因此，可以必要最小限 度之控制有效地謀求蒸鎮材料之溫度之均勻化。 又，上述加熱源係改變配置密度而使對上述坩堝之加熱 量不同。 根據該構成’可以簡易之構成謀求蒸鍍材料之溫度均句 化。 又，本發明之溫度調節方法係真空蒸錢裝置中之溫度調 143630.doc 201024438 節方法，該真空蒸鍍裝置具備：真空室，其係可收容從外 部搬入之被蒸鐘體；掛禍，其係設置於上述真空室内並收 容蒸鍍材料；加熱源，其係加熱上述掛堝並使上述蒸鍵材 料氣化，·及複數個支持部，其係設置於上述掛禍之底部與 ί述真空室之地板部之間而支持上述坩堝。且，該溫度調 節方，其特徵在於，預先掌握上述蒸鑛材料中溫度相對變 局之高溫部，並在上祕古、、〇 士 ^ 上it间皿布附近之上述底部設置上述支 持邛，而使上述鬲溫部之溫度降低。 ，根據該構成’由於預先掌握蒸鑛材料之高溫部，並在高 溫部附近之底部設置上 上这支持邛’而使上述高溫部之溫度 降低’故與蒸鍵材料中溫度相對較低之部位之差值變小。 藉此’可縮小掛禍内 其 巧之蒸鍍材料之溫度分佈之偏差，從而 可調節掛瑪内之蒸鍍材料之溫度。因此，可謀求蒸鍵材料 之溫度之均勾化’而可容易地謀求溫度分佈之均句化。再 者’ f由謀求溫度分佈之均勻化，使蒸鍍材料之氣化量成 為疋&可在掛禍内之各部位使蒸鍵材料之減少大致相 等，從而可使材料之額外之填充減少。 斤又本發明之溫度調節方法係真空蒸鍵裝置中之溫度調 節方法λ:蒸鑛裝置具備：真空室，其係可收容從外部 搬入之被蒸㈣；_ ’其係設置於上述真空室内並收容 祭錄材料；加献诉，甘於1 h '、、辑、其係加熱上述坩禍並使上述蒸鍍材料 氣化’及複數個支持部，其係設置於上述掛禍之底部與上 述真工至之地板部之間而支持上述时禍。且’該溫度調節 方法其特徵在於’預先掌握上述蒸鍍材料之溫度分佈，並 143630.doc 201024438 變更上述複數個支持部中至少一部分對上述地板部之傳熱 量’而調節上述蒸鍍材料之溫度分佈。 根據該構成，可預先掌握蒸鍍材料之溫度分佈，在上述 同溫部附近之底部設置上述支持部而變更對於上述地板部 之傳熱量’從而調節上述蒸鍍材料之溫度分佈。即，就溫 度相對低的部位附近之支持部，可降低傳熱量，而就溫度 相對尚的部位之附近之支持部，則可增加傳熱量。藉此， 可縮〗坩瑪内之蒸鍵材料之溫度分佈之偏差從而可調節 坩堝内之蒸鍍材料之溫度。因此，可謀求蒸鍍材料之溫度 之均勻化，而可容易地謀求溫度分佈之均勻化。再者，藉 由謀求μ度分佈之均勻化，使蒸鍍材料之氣化量成為固 定，故可在坩堝内之各部位使蒸鍍材料之減少大致相等， 從而可使材料之額外之填充減少。 〜又，本發明之溫度調節方法係真空蒸鍍裝置中之溫度調 即方法’真空蒸鍍裝置具備：真空室，其係可收容從外部 搬入之被蒸鍍體；㈣，其賴置於上述真空室内並收容 ^鍍材料’及加熱源，其係加熱上述掛竭並使上述蒸鑛材 料氣化且，該溫度調節方法其特徵在於，預先掌握上述 蒸發材料之溫度分佈，使上述高溫部附近之上述加熱量變 化而調節上述蒸鍍材料之溫度分佈。 古：據該構成’可預先掌握蒸鍍材料之溫度分佈，在上述 :Γ錢近之底部設置上述支持部而變更對上述地板部之 量’從而調節上述蒸鍍材料之溫度分佈 相對低的部位之阱卞在/里度 之附近，可使加熱量增加，而對於 143630.doc 201024438 高的部位之附近之支持部，可使加熱量降低。藉此，可縮 小掛竭内之蒸鑛材料之溫度分佈的偏差，從而可調節_ 内之蒸鑛材料之溫度。因此，可謀求蒸鑛材料之溫度之均 勾化’而可容易地謀求溫度分佈之均勾化。再者藉由謀 求溫度分佈之均勻化，使蒸鑛材料之氣化量成為固定，故 可在坩堝内之各部位使蒸鍍材料之減少大致相等，從而可 使材料之額外之填充減少。 [發明效果]201024438 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a vacuum evaporation apparatus and a temperature adjustment method. This application is filed on Dec. 24, 2008, the entire disclosure of which is hereby incorporated by reference in the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire The steaming method is used, for example, in the manufacturing process of organic rainbow products, which is mainly used for producing a film of an organic EL element using a low molecular compound as a material. In the vacuum distillation method, the organic material is stored in a vacuum chamber, and the organic material is heated by a heater or the like, whereby the organic material is adhered to the substrate or the like to form a film. However, the bias of the heater configuration, the amount of heat generated, or the configuration of the components in the vacuum chamber can cause the temperature distribution of the organic materials in the stack to be inconspicuous. If the temperature distribution of the organic material in the disaster is uneven, the organic material will be vaporized, so that the film formed on the substrate cannot be uniformly hooked. In addition, the organic materials will remain in a large amount in the gamma in a state of unevenness. As a vacuum vapor deposition device for solving such problems, there is a patent document described below. The vacuum vapor deposition apparatus accommodates a plurality of granular mixtures composed of materials heated by high frequency induction in a disaster caused by a material that is not heated by high frequency induction, and the granular mixture is subjected to a high frequency. The heating method is to face the organic material while heating. [Prior Art Document] [Patent Document] 143630.doc 201024438 [Patent Document 1] JP-A-2004-3239 15 SUMMARY OF INVENTION [Problems to be Solved by the Invention] However, in the prior art, 'because of heating Organic materials require a significant amount of particulate inclusions. Therefore, as the gasification of organic materials progresses, the organic materials will be lower than the height of the particulate inclusions. At this time, the organic material located between the particulate inclusions is heated intensely. Therefore, in the case where the organic material is less than a certain amount, it is necessary to re-add a new organic material or replace the organic material, and there is a problem that the production efficiency or economy is deteriorated. The present invention has been made in consideration of such circumstances, and an object of the present invention is to provide a vacuum vapor deposition apparatus and a temperature adjustment method for reducing the uniformity of temperature distribution in a simple configuration of the ® bin b, thereby reducing the extra filling of materials. [Technical means for solving the problem] In order to achieve the above object, the present invention employs the following means. That is, the vacuum vapor deposition apparatus of the present invention is characterized in that it includes a vacuum chamber that can accommodate a vaporized body that is carried in from the outside, and is placed in the above-mentioned real work to accommodate the steamed material; And heating the steaming material to vaporize the steaming material; and a plurality of supporting portions dispersed in the bottom of the hanging to support the collapse and between the hanging line and the floor portion of the vacuum chamber Heat transfer. According to this configuration, since the plurality of support portions that are disposed at the bottom of (4) and that transfer heat between the stacking fault and the floor portion of the vacuum chamber are provided, the temperature of the vapor deposition material in the crucible in the vicinity of the support portion is lowered. . The temperature of the steamed ore material in (4) can be adjusted by engraving the low (four) points. That is, 143630.doc -4- 201024438 By dispersing the low-temperature portions, it is possible to achieve the uniformity of the temperature of the steam-bonding material. Furthermore, by making the temperature distribution in the crucible uniform, the variation in the amount of C-formed material of the vapor deposition material can be reduced, so that the reduction of the steaming material can be made uniform in each part of the rug. Therefore, the extra filling of the steamed key material can be reduced. Further, the heating source is configured to increase the heating amount of the crucible in the vicinity of the support portion. According to this configuration, since the amount of heating increases in the vicinity of the support portion, the portion that is separated from the support portion without being transferred to the floor portion and the portion that is heated to the floor portion in the vicinity of the support portion is steamed. The temperature difference of the mineral material is reduced. Thereby, the temperature of the vapor deposition material can be further uniformized. Further, the heat transfer amount of one of the plurality of support portions is different from that of the other support portions. According to this configuration, since the heat transfer amount of one of the plurality of support portions is different from that of the other support portions, the amount of heat transfer of the vapor deposition material to the floor portion of the relatively high temperature portion can be increased, and the vapor deposition material can be made to the relatively low temperature portion. The heat transfer amount of the floor surface is reduced, and the temperature of the vapor deposition material can be made uniform. Further, since the amount of heat transfer of the vapor deposition material to the relatively low temperature portion can be reduced, the amount of heat generated by the heater can be reduced. Further, one of the plurality of support portions has a cross-sectional area different from that of the other support portions. Further, one of the plurality of support portions is formed of a material different from the heat conductivity of the other support portions. Further, one of the plurality of support portions is such that a heat-resistant member having a heat conduction direction is interposed between the ridge and the floor portion, and heat is transferred therebetween 143630.doc 201024438. Further, the vacuum vapor deposition device of the present invention includes a vacuum chamber that accommodates a vapor-deposited body that is carried in from the outside, and is provided in the vacuum chamber to receive a vapor-steamed material, and a heating source that is heated The above-mentioned hanging horses vaporize the vapor deposition material. The heating source differs in the amount of heating of the crucible depending on the position of the crucible. According to this configuration, since the amount of heating of the heating source differs depending on the position of the crucible, the amount of heating of the vapor deposition material at a relatively high temperature portion is reduced, and the amount of heating of the vapor deposition material at a relatively low temperature portion is increased. Therefore, the temperature of the vapor deposition material can be made uniform. Further, the heating source changes the amount of heat generation, and the amount of heat added to the crucible is different. Further, a control unit that controls the amount of heat generated by the heat source is provided. The control unit starts the heat generation adjustment on the condition that the vapor deposition material in the crucible reaches a certain amount or less. According to this configuration, since the heat generation adjustment is started under the condition that the vapor deposition material is lower than the specific amount, the temperature can be adjusted only in a region where the total amount of the vapor deposition material is lowered and the temperature distribution is increased. Therefore, it is possible to effectively achieve uniformization of the temperature of the steamed material by the minimum necessary control. Further, the heating source changes the arrangement density to make the heating amount to the crucible different. According to this configuration, the temperature of the vapor deposition material can be simplified in a simple configuration. Moreover, the temperature adjustment method of the present invention is a method of temperature adjustment in a vacuum evaporation apparatus, 143630.doc 201024438, the vacuum evaporation apparatus includes a vacuum chamber that can accommodate a vaporized body that is carried in from the outside; The utility model is disposed in the vacuum chamber and houses a vapor deposition material; the heating source heats the hanging layer and vaporizes the steaming material, and a plurality of supporting portions are disposed at the bottom of the hanging and the above The above crucible is supported between the floor portions of the vacuum chamber. Further, the temperature adjustment unit is characterized in that the high temperature portion of the steamed material in which the temperature is relatively changed is grasped in advance, and the support 邛 is provided at the bottom portion of the upper cloth near the top and the 〇士^ The temperature of the above-mentioned temperature rising portion is lowered. According to this configuration, since the high temperature portion of the steamed material is grasped in advance, the temperature of the high temperature portion is lowered by providing the support 邛 at the bottom portion near the high temperature portion, so that the temperature in the steam bond material is relatively low. The difference becomes smaller. By this, the deviation of the temperature distribution of the vapor deposition material in the accident can be reduced, thereby adjusting the temperature of the vapor deposition material in the interior. Therefore, the temperature of the steam-bonding material can be made uniform, and the uniformity of the temperature distribution can be easily achieved. Furthermore, 'f is equalized by the temperature distribution, so that the vaporization amount of the vapor deposition material becomes 疋& the reduction of the steam bond material can be made substantially equal in each part of the accident, so that the additional filling of the material can be reduced. . The temperature adjustment method of the present invention is a temperature adjustment method in a vacuum steaming key device. λ: The steaming apparatus includes a vacuum chamber that can accommodate steamed from the outside (four); _ 'the system is disposed in the vacuum chamber and Containing memorial materials; add a complaint, willing to 1 h ',, series, heating the above-mentioned disasters and vaporizing the vapor deposition material' and a plurality of support parts, which are set at the bottom of the above-mentioned disaster and the above-mentioned true The above-mentioned disasters are supported between the floor and the floor. And the temperature adjustment method is characterized in that 'the temperature distribution of the vapor deposition material is grasped in advance, and 143630.doc 201024438 changes the heat transfer amount of at least a part of the plurality of support portions to the floor portion to adjust the temperature of the vapor deposition material. distributed. According to this configuration, the temperature distribution of the vapor deposition material can be grasped in advance, and the support portion can be provided at the bottom portion in the vicinity of the same temperature portion, and the heat transfer amount of the floor portion can be changed to adjust the temperature distribution of the vapor deposition material. In other words, the amount of heat transfer can be reduced in the support portion near the portion where the temperature is relatively low, and the amount of heat transfer can be increased in the vicinity of the portion where the temperature is relatively high. Thereby, the temperature distribution of the steamed key material in the gamma can be reduced to adjust the temperature of the vapor deposition material in the crucible. Therefore, the temperature of the vapor deposition material can be made uniform, and the temperature distribution can be easily made uniform. Further, by making the μ degree distribution uniform, the vaporization amount of the vapor deposition material is fixed, so that the reduction of the vapor deposition material can be made substantially equal in each portion of the crucible, and the additional filling of the material can be reduced. . Further, the temperature adjustment method of the present invention is a temperature adjustment method in a vacuum evaporation apparatus. The vacuum evaporation apparatus includes a vacuum chamber that accommodates a vapor-deposited body that is carried in from the outside; (4) The vacuum chamber accommodates a plating material and a heating source, and the heating element is heated to vaporize the vaporized material. The temperature adjustment method is characterized in that the temperature distribution of the evaporation material is grasped in advance to bring the high temperature portion nearby. The above heating amount is changed to adjust the temperature distribution of the vapor deposition material. According to this configuration, the temperature distribution of the vapor deposition material can be grasped in advance, and the support portion is provided at the bottom of the money, and the amount of the floor portion is changed to adjust the temperature distribution of the vapor deposition material to be relatively low. In the vicinity of /Ri, the amount of heating can be increased, and for the support portion near the portion where 143630.doc 201024438 is high, the amount of heating can be reduced. Thereby, the deviation of the temperature distribution of the steamed ore material in the exhaust can be reduced, so that the temperature of the steamed material in the inside can be adjusted. Therefore, the temperature of the steamed material can be uniformly extracted, and the uniformity of the temperature distribution can be easily achieved. Further, by making the temperature distribution uniform, the vaporization amount of the vapor-deposited material is fixed, so that the reduction of the vapor deposition material can be made substantially equal in each portion of the crucible, and the additional filling of the material can be reduced. [Effect of the invention]
根據本發明之真空蒸鑛裝置 之構成謀求溫度分佈之均勻化 填充。 及溫度調節方法，能以簡易 ，從而可減少材料之額外之 【實施方式】 以下，參照圖式，就本發明之實施形態以說明。 (第一實施形態） 圖1係顯示本發明之第一實施形態之真空蒸鍍裝置A1之 概略構成截面圖。 如圖1A所示，真空蒸鍍裝置A1具備：真空室1;坩堝 2，其係設置於上述真空室丨内並收容蒸鍍材料M ;加熱源 3，其係加熱上述坩堝2並使上述蒸鍍材料M氣化；及三個 支持部5，其係分散配置於坩堝2之底部2c並支持坩堝2， 且在坩堝2與真空室1之地板部la之間傳熱。 真空室1係構成為可將基板B從外部搬出入，且可進行減 壓。在該真空室1内，藉由基板保持部（未圖示）可使基板B 保持於上部。 143630.doc 201024438 D係其°卩分之壁部為開放之細長箱形狀者，以金 屬(例如，欽或不鏽钢)而構成。該掛 之地板部1a。—將其底部之： 部之AM ^者將㈣孔蚊開口部保持於基板保持 4之基板B之板面的方式而配置。 該㈣2由於構造上之特性，而有其底面之長方向之一 端2b側為低溫之趨勢。 加熱源3其具體而言係由電氣加熱式之加熱器所構成， 且將延伸方向向著㈣2之底部之短方向，並複數配設於 掛禍2之下方。該加熱源3係配設在設置於地板㈣上之隔 熱膜4上。 la 支持部5係形成為立方體狀之構件，分別立設於地板部 〇 該支持部5在堆堝2之底面之長方向以大致等間隔而設 ^，將與时竭2之短方向之尺寸大致相同之尺寸之長邊向 著坩堝2之底面之短方向而支持坩堝2。 其次，就包含上述之構成之真空蒸鍍裝置八1之動作，利 用圖2A〜圖2C進行說明。 首先，如圖2A所示，藉由基板保持部（未圖示）被搬入至 真空室1内之基板B，在真空室内被保持於上部。其次，使 真空室1内減壓’使其成為特定之真空度。 .其-人，藉由加熱源3將在收容孔2a中收容有機材料Μ之 坩堝2加熱至大約200〜400。(：。再者，加熱源3由於隔著隔 熱膜4，故可良好地輕射傳熱至上方之掛竭2。 143630.doc •10- 201024438 藉由加熱源3加諸於坩堝2之熱量會傳遞至收容孔以之有 機材料’且通過支持部5傳遞至地板部la。即，傳遞至有 機材料Μ之熱量或原本應該傳遞至有機材料μ之熱量，會 被傳遞至地板部la。因此，在俯視圖中支持部5附近之有 機材料Μ之溫度比其他部位低。即，在有機材料M 、 以 大致等間隔存在三個溫度較低之部位。 隨著掛禍2被加熱’有機材料M氣化（以符號〇表 》 而 附著於基板B之板面。在坩堝2内，如圖2B所示，在相對 • 高溫之部位，有機材料Μ較多被氣化，而在相對低溫之部 位，有機材料Μ較少被氣化。 且，在坩堝2中，如圖2C所示，相對高溫之部位之有機 材料Μ全部氣化，但在相對低溫之部位，則殘存三個呈有 機材料Μ之塊狀之μ。 如此，藉由特定時間之蒸鍵，於基板B之其中一板面上 均勻地形成薄膜。 如以上之說明，本實施形態之真空蒸鍍裝置幻具備分散 籲配置於坩堝2之底部2c、並在坩堝2與真空室！之地板部u 之間傳熱的複數個支持部5。因此，可使支持部5附近之坩 -堝2内之有機材料M的溫度降低，從而可調節坩堝2内之有 ，機材料之溫度。 即，本來，由於坩堝2之構造特性上，其一端2b側偏向 低溫，故在一端2b側形成一個低溫部，而使溫度分佈產生 偏差。然而，由於真空蒸鍵裝置幻刻意設置低溫部分而分 散在三處，故可謀求有機材料M之溫度之均勻化。 143630.doc 201024438 再者’藉由使溫度分佈均勻化，使得有機材料M之氣化 量均勻化，故有機材料Μ之減少在坩堝2之各部位大致相 等，從而可減少有機材料之額外填充。 再者’代替上述之構成，亦可改採在支持部5附近增大 加熱源3對坩堝2之加熱量之構成。如此，在遠離支持部5 而不會對地板部la傳熱的部位，與在支持部5之附近會傳 熱到地板部la之部位中之蒸鍍材料M之溫度差變小。藉 此，可進一步謀求有機材料Μ之溫度之均勻化。 又，加熱源3不僅在坩堝2之下方，亦可在側方或上方。 藉由s玄構成使坩堝2之整體升溫，可防止坩竭2内之材料附 著。 又’加熱源3亦可向著坩堝2之底部之長方向而設置。 即，只要可將坩堝2加熱，可隨意設置加熱源3之設置方 向。 (第二實施形態） 其次，就本發明之第二實施形態進行說明。 圖3係顯示本發明之第二實施形態之真空蒸鍍裝置人2之 概略構成截面圖。再者，在以下之說明中，對於與圖1〜3 同樣之構成要素’附註同樣之符號並省略說明。 如圖3所示’真空蒸鍵裝置Α2係以對三個支持部 5(5a~5c)之對地板部la之傳熱量分別與其他支持部5不同的 方式而構成。 一端2b側之支持部5a係經由對熱傳導具有方向性之熱阻 構件6，而立設於地板部la。該熱阻構件6係用於阻礙從支 143630.doc • 12- 201024438 持。P 5a對地板部1&之熱傳遞，例如可使用碳薄板或不痛钢 板。 她連於支持部5a之支持料係構成為與支持部^及支持 部5C相比較其截面積較小（與傳熱方向正交之截面）。 . 毗連於支持部讣之支持部5c係與上述第一實施形態之支 持5相同者。再者，支持部5a之截面積與支持部5c大致 相等而構成。 糟由上述之構成，熱傳遞率之大小依序為支持部5a<支 φ 持部5b<支持部5C。 根據該構成，如上所述，即使坩堝2由於構造上之特 ^ 15長方向之其中一側為低溫之趨勢，從支持部5a對地 板°卩1 a之傳熱量均為最小，而依支持部5b、5c之順序增 大。因此，可縮小有機材料Μ之各部位之溫度之差分。藉 此，可進一步謀求蒸鍍材料之溫度之均勻化。 再者，亦可代替上述之構成，改為將支持部5以與他者 ^傳導率不同之材料而構成，並使傳熱量變化。又，亦可 使用熱阻構件6並使截面積變化，此外亦可更以熱傳導率 不同之材料而構成。 (第三實施形態） 其次’就本發明之第三實施形態以說明。 圖4係顯示本發明之第三實施形態之真空蒸鍍裝置八3之 概略構成截面圖。 如圖3所示，真空蒸鍍裝置Α3被支持於與坩堝12具相同 之傳熱量之二個支持部5(1上。再者，在真空蒸鍍裝置幻 143630.doc -13- 201024438 中，在夾在a二個支持部5d中之區域間，使加熱源3之間 隔較寬，且在該區域之外側使加熱源3之間隔較窄。即， 在夾在兩個支持部5d之區域中，坩堝12之加熱量小，而在 兩側之加熱量大。 根據該構成，即使坩堝12由於構造上之特性，即長方向 之兩方側為低溫之趨勢，但由於將該兩方側之加熱量增 大，而將中央附近減小，故可謀求有機材料M之溫度之均 勻化。 (第四實施形態） 其次’就本發明之第四實施形態以說明。 圖5係顯示本發明之第四實施形態之真空蒸鍍裝置八斗之 概略構成截面圖。 真空蒸鍍裝置A4具備控制加熱源3之發熱量之控制部7。 在該控制部7中記憶著對應於有機材M在坩堝丨2之内部到 達特疋量以下所需之時間之資訊。當控制部7察覺自蒸鑛 開始後經過該時間時，便會調節各加熱源3之發熱量。 即，一旦經過特定時間，便使坩堝12内之有機材料河之 溫度分佈均勻化。 根據該構成，由於僅在有機材料Μ之總量減少且溫度分 佈之偏差加劇之區域進行溫度調節，故能以必要最小限度 之控制有效地謀求有機材料Μ之溫度之均勻化。 再者，亦可代替上述之實施構成，改為藉由檢測有機材 料Μ之總量之感測器等開始進行控制之構成。 再者，在上述之實施形態中所示之動作之程序，或各構 143630.doc -14- 201024438 成構件之諸形狀或組合等係為一例，在不脫離本發明之主 旨之範圍内’得基於設計要求等作各種之變更。 例如，若以與上述之實施形態之構成同樣，藉由預先測 量等而掌握有機材料Μ之高溫部，在該高溫部附近之底部 2c設置支持部5，則可將該高溫部調節為低溫化。再者， 亦可從蒸鍍後殘存於坩堝2内之有機材料μ之位置來推測 南溫部。 Π樣的，亦可藉由預先測量等而掌握有機材料Μ之溫度 ❹ 分佈，而變更支持部5之截面積、熱阻構件6之材料等，以 調節該溫度分佈。 又，在上述之實施形態中，乃將本發明應用在坩堝2之 壁部之一部分為開放之坩堝2，但對於具蒸汽喷出用之開 口部之坩堝，亦可應用本發明。同樣的，對於在壁部之一 部分穿没複數個小開口部之掛禍， 再者’在上述之實施形態中，7 ’亦可應用本發明。 乃將本發明應用於以金屬 構成之坩堝2,但對於代替金屬而以非金屬（例如，石墨 石英）而構成之坩堝，亦可應用本發明。 【圖式簡單說明】 實施形態之真空蒸鍍裝置A1之概 圖1Α係本發明之第一實 略構成截面圖。According to the configuration of the vacuum distillation apparatus of the present invention, the temperature distribution is uniformly filled. And the temperature adjustment method can be simplified, and the additional material can be reduced. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. (First Embodiment) Fig. 1 is a schematic cross-sectional view showing a vacuum vapor deposition apparatus A1 according to a first embodiment of the present invention. As shown in FIG. 1A, the vacuum vapor deposition apparatus A1 includes a vacuum chamber 1 and a crucible 2 which is housed in the vacuum chamber and houses a vapor deposition material M. The heating source 3 heats the crucible 2 and evaporates the vapor. The plating material M is vaporized; and three support portions 5 are disposed dispersedly at the bottom portion 2c of the crucible 2 and support the crucible 2, and transfer heat between the crucible 2 and the floor portion 1a of the vacuum chamber 1. The vacuum chamber 1 is configured such that the substrate B can be carried in and out from the outside, and the pressure can be reduced. In the vacuum chamber 1, the substrate B can be held in the upper portion by a substrate holding portion (not shown). 143630.doc 201024438 D is composed of a metal (for example, Chin or stainless steel) whose wall portion is an open elongated box shape. The floor portion 1a is hung. - The AM of the bottom portion is arranged such that the opening of the (4) hole mosquito is held on the surface of the substrate B of the substrate holding 4 . The (4) 2 has a tendency to have a low temperature on the side of the end 2b in the longitudinal direction of the bottom surface due to its structural characteristics. The heat source 3 is specifically constituted by an electric heating type heater, and has a direction of extension toward the short direction of the bottom of the (four) 2, and is disposed in plural below the hook 2 . This heat source 3 is disposed on the heat insulating film 4 provided on the floor (four). The la support portion 5 is formed in a cubic shape and is erected on the floor portion. The support portion 5 is disposed at substantially equal intervals in the longitudinal direction of the bottom surface of the stack 2, and is dimensioned in the short direction of the time 2 The long sides of substantially the same size support 坩埚2 in the short direction of the bottom surface of the cymbal 2. Next, the operation of the vacuum vapor deposition apparatus VIII including the above configuration will be described with reference to Figs. 2A to 2C. First, as shown in Fig. 2A, the substrate B carried into the vacuum chamber 1 by the substrate holding portion (not shown) is held in the upper portion in the vacuum chamber. Next, the inside of the vacuum chamber 1 is decompressed to have a specific degree of vacuum. The person, by the heat source 3, heats the crucible 2 containing the organic material in the receiving hole 2a to about 200 to 400. (: In addition, since the heat source 3 is separated from the heat insulating film 4, it can be lightly radiated to the upper side of the heat-dissipating unit 2. 143630.doc •10-201024438 is added to the 坩埚2 by the heat source 3 The heat is transferred to the organic material of the receiving hole and transmitted to the floor portion 1a through the support portion 5. That is, the heat transferred to the organic material or the heat that should be transmitted to the organic material μ is transmitted to the floor portion 1a. Therefore, the temperature of the organic material in the vicinity of the support portion 5 in the plan view is lower than that of the other portions. That is, the organic material M has three lower temperatures at substantially equal intervals. M gasification (in symbolic form) is attached to the surface of the substrate B. In the 坩埚2, as shown in Fig. 2B, at the relatively high temperature, the organic material Μ is more vaporized, and at a relatively low temperature. At the site, the organic material is less vaporized. Moreover, in the crucible 2, as shown in Fig. 2C, the organic material in the relatively high temperature portion is completely vaporized, but in the relatively low temperature portion, three organic materials remain.块的块状μ. So, by special The steaming time of time forms a film uniformly on one of the surfaces of the substrate B. As described above, the vacuum vapor deposition apparatus of the present embodiment has a dispersion and is disposed at the bottom 2c of the crucible 2, and is in the crucible 2 and the vacuum. a plurality of support portions 5 that transfer heat between the floor portions u of the room. Therefore, the temperature of the organic material M in the 坩-埚2 in the vicinity of the support portion 5 can be lowered, so that the material in the 坩埚2 can be adjusted. In other words, since the structural characteristic of 坩埚2 is biased toward the low temperature at one end 2b side, a low temperature portion is formed on the one end 2b side, and the temperature distribution is deviated. However, since the vacuum steaming device is deliberately set to a low temperature. In part, it is dispersed in three places, so that the temperature of the organic material M can be uniformized. 143630.doc 201024438 Furthermore, by homogenizing the temperature distribution, the gasification amount of the organic material M is made uniform, so the organic material is The reduction is substantially equal in each part of the crucible 2, so that the extra filling of the organic material can be reduced. In addition, instead of the above configuration, the addition of the heating source 3 to the crucible 2 can be increased in the vicinity of the support portion 5. In this way, the temperature difference between the vapor deposition material M in the portion where the heat is transferred to the floor portion 1a in the vicinity of the support portion 5 is smaller in the portion far from the support portion 5 and not in the heat transfer to the floor portion 1a. In this way, the temperature of the organic material can be further uniformized. Further, the heat source 3 can be prevented not only below the crucible 2 but also on the side or above. The temperature of the crucible 2 can be prevented by heating the whole of the crucible 2 The material in the exhaust 2 is attached. Further, the heating source 3 may be disposed in the longitudinal direction of the bottom of the crucible 2. That is, as long as the crucible 2 can be heated, the direction in which the heating source 3 is disposed can be arbitrarily set. Next, a second embodiment of the present invention will be described. Fig. 3 is a cross-sectional view showing a schematic configuration of a vacuum vapor deposition apparatus 2 according to a second embodiment of the present invention. In the following description, the same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and their description is omitted. As shown in Fig. 3, the vacuum-steaming device Α2 is configured such that the amount of heat transfer to the floor portion 1a of the three supporting portions 5 (5a to 5c) is different from that of the other supporting portions 5. The support portion 5a on the one end 2b side is erected on the floor portion 1a via the heat resistance member 6 having directivity to heat conduction. The thermal resistance member 6 is used to block from the support 143630.doc • 12-201024438. The heat transfer of P 5a to the floor portion 1 &, for example, a carbon sheet or a painless steel sheet can be used. The support material connected to the support portion 5a is configured to have a smaller cross-sectional area (a cross section orthogonal to the heat transfer direction) as compared with the support portion and the support portion 5C. The support portion 5c adjacent to the support portion is the same as the support 5 of the first embodiment described above. Further, the support portion 5a has a cross-sectional area substantially equal to that of the support portion 5c. According to the above configuration, the heat transfer rate is sequentially the support portion 5a < support φ holding portion 5b < support portion 5C. According to this configuration, as described above, even if the crucible 2 has a tendency to have a low temperature on one side of the structural direction, the heat transfer amount from the support portion 5a to the floor surface is the smallest, and the support portion is the support portion. The order of 5b, 5c increases. Therefore, the difference in temperature between the respective portions of the organic material can be reduced. Thereby, the temperature of the vapor deposition material can be further uniformized. Further, instead of the above configuration, the support portion 5 may be formed of a material different from the other one, and the amount of heat transfer may be changed. Further, the heat-resistance member 6 may be used to change the cross-sectional area, or may be formed of a material having a different thermal conductivity. (Third embodiment) Next, a third embodiment of the present invention will be described. Fig. 4 is a cross-sectional view showing a schematic configuration of a vacuum vapor deposition device VIII according to a third embodiment of the present invention. As shown in FIG. 3, the vacuum evaporation apparatus Α3 is supported by two support portions 5 (1) having the same heat transfer amount as the crucible 12. Further, in the vacuum evaporation apparatus illusion 143630.doc-13-201024438, Between the regions sandwiched between the two support portions 5d, the interval between the heat sources 3 is made wider, and the interval between the heat sources 3 is narrowed on the outer side of the region. That is, in the region sandwiched between the two support portions 5d In this case, the amount of heating of the crucible 12 is small, and the amount of heating on both sides is large. According to this configuration, even if the crucible 12 has a structural characteristic, that is, both sides in the long direction tend to have a low temperature, the two sides are The amount of heating is increased, and the vicinity of the center is reduced, so that the temperature of the organic material M can be made uniform. (Fourth embodiment) Next, a fourth embodiment of the present invention will be described. Fig. 5 shows the present invention. The vacuum vapor deposition apparatus A4 includes a control unit 7 that controls the amount of heat generated by the heat source 3. The control unit 7 memorizes the organic material M in the control unit 7.所需2 The time required for the internal arrival of the 疋2 When the control unit 7 detects that the time has elapsed since the start of the steaming, the heat generation amount of each of the heat sources 3 is adjusted. That is, once a certain period of time has elapsed, the temperature distribution of the organic material river in the crucible 12 is made uniform. According to this configuration, since the temperature adjustment is performed only in the region where the total amount of the organic material enthalpy is reduced and the variation in the temperature distribution is increased, the temperature of the organic material enthalpy can be effectively made uniform with the minimum necessary control. Instead of the above-described configuration, the configuration may be started by a sensor or the like that detects the total amount of the organic material 。. Further, the procedure of the operation shown in the above embodiment, or the structure 143630. Doc-14-201024438 The shape or the combination of the components is an example, and various modifications can be made based on design requirements, etc., without departing from the gist of the present invention. For example, the configuration is the same as that of the above-described embodiment. By grasping the high temperature portion of the organic material by premeasurement or the like, and providing the support portion 5 at the bottom portion 2c near the high temperature portion, the high temperature portion can be adjusted to a lower temperature. In addition, the south temperature portion can be estimated from the position of the organic material μ remaining in the crucible 2 after vapor deposition. In the case of the sample, the temperature ❹ distribution of the organic material can be grasped by measurement in advance, and the support portion can be changed. The cross-sectional area of 5, the material of the heat-resistance member 6, etc., to adjust the temperature distribution. Further, in the above-described embodiment, the present invention is applied to a portion of the wall portion of the crucible 2 which is open to the top 2, but The present invention can also be applied to the opening of the steam ejecting portion. Similarly, in the case where a plurality of small opening portions are not worn in one portion of the wall portion, in the above embodiment, 7' may be used. The present invention is applied to a crucible 2 made of a metal, but the present invention can also be applied to a crucible made of a non-metal (for example, graphite quartz) instead of a metal. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a first practical configuration of the present invention.
實施形態之真空蒸鍍裳置A1由P 圖1B係將本發明之第一實 方向所見之平面圖。The vacuum evaporation skirt A1 of the embodiment is shown in Fig. 1B as a plan view of the first aspect of the invention.
’且加熱量動作之一實例。 圖2A係顯示本發 之概略構成截面圖，且加埶4 I43630.doc •15· 201024438 圖2B係顯示本發明之第一實施形態之真空蒸鍍裝置ai 之概略構成截面圖，且加熱量動作之一實例。 圖2C係顯示本發明之第一實施形態之真空蒸鍍裝置A1 之概略構成截面圖，且加熱量動作之一_實例。 圖3係本發明之第二實施形態之真空蒸鍍裝置a2之概略 構成截面圖。 圖4係本發明之第三實施形態之真空蒸鍍裝置a 3之概略 構成截面圖。 圖5係本發明之第四實施形態之真空蒸鍍裝置A4之概略 構成截面圖。 【主要元件符號說明】 1 真空室 1 a 地板部 2、12 坩堝 2c 底部 3 加熱源 5(5a〜5d) 支持部 6 熱阻構件 7 控制部 B 基板 Μ、m 有機材料（蒸鍍材料） Al、A2、A3、A4 真空蒸鍍裝置 143630.doc -16、'An example of a heating amount action. 2A is a cross-sectional view showing a schematic configuration of the present invention, and is shown in FIG. 2B. FIG. 2B is a schematic cross-sectional view showing a vacuum vapor deposition apparatus ai according to the first embodiment of the present invention, and the heating amount is shown. An example. Fig. 2C is a schematic cross-sectional view showing a vacuum vapor deposition device A1 according to the first embodiment of the present invention, and an example of the heating amount operation. Fig. 3 is a schematic cross-sectional view showing a vacuum vapor deposition apparatus a2 according to a second embodiment of the present invention. Fig. 4 is a schematic cross-sectional view showing a vacuum vapor deposition device a 3 according to a third embodiment of the present invention. Fig. 5 is a schematic cross-sectional view showing a vacuum vapor deposition apparatus A4 according to a fourth embodiment of the present invention. [Main component symbol description] 1 Vacuum chamber 1 a Floor portion 2, 12 坩埚 2c Bottom 3 Heating source 5 (5a to 5d) Support portion 6 Thermal resistance member 7 Control portion B Substrate Μ, m Organic material (vapor deposition material) Al , A2, A3, A4 vacuum evaporation device 143630.doc -16,