KR101283184B1 - Hot plate amd method manufacturing the same - Google Patents

Abstract

Hot plate manufacturing method according to an embodiment, preparing a first barrier layer; Stacking a first heat transfer layer on the first barrier layer; And stacking a second barrier layer on the first heat transfer layer, wherein the first barrier layer or the second barrier layer comprises a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers. Include.
Hot plate according to the embodiment, the first barrier layer; A first heat transfer layer on the first barrier layer; And a second barrier layer positioned on the first heat transfer layer, wherein the first barrier layer or the second barrier layer includes a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers.

Description

HOT PLATE AMD METHOD MANUFACTURING THE SAME}

Embodiments relate to hotplates and hotplate manufacturing methods.

In general, chemical vapor deposition (CVD) is widely used as a technique for forming various thin films on a substrate or a wafer. The chemical vapor deposition method is a deposition technique involving a chemical reaction, which uses a chemical reaction of a source material to form a semiconductor thin film, an insulating film, and the like on the wafer surface.

Such chemical vapor deposition methods and deposition apparatuses have recently attracted attention as a very important technology among thin film formation technologies due to miniaturization of semiconductor devices, development of high efficiency, high power LEDs, and the like. And is currently being used for depositing various thin films such as a silicon film, an oxide film, a silicon nitride film or a silicon oxynitride film, a tungsten film, and the like on a wafer. In addition, large-diameter wafers have been steadily researched to lower manufacturing costs.

However, the current chemical vapor deposition method has a difficulty in having a uniform temperature distribution when increasing the size of the susceptor or hot plate. Thus, many difficulties can be encountered in depositing an epi layer on a substrate or wafer having a size of 6 " or larger that is currently under development.

In the susceptor used in the conventional chemical vapor deposition method, various thin films are deposited by placing a wafer or a substrate on a hot plate. At this time, the hot plate used may be made of a material that can withstand high temperatures. In the case of a hot plate mainly used for silicon carbide deposition, silicon carbide (SiC) may be mainly used. The silicon carbide is a conductor having a thermal conductivity of about 300 W / mK.

However, as the diameter of the wafer increases, the hot plate may be enlarged together, and heat transfer may not be uniformly transferred on the wafer. As a result, thin film deposition on the wafer may be unevenly deposited, thereby degrading the characteristics.

See reference in Pernot, G., et al. Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers. Nat Mater 9, 491-495 (2010). A coating of multiple layers of layers is disclosed.

When the material is coated in a nano size it can be seen that the thermal conductivity is very low compared to bulk silicon. In other words, it can be seen that the thermal conductivity of the nano-size material is very low compared to the thermal conductivity of the bulk material.

Therefore, even for the same material, the bulk material and the material having a nano size differ in thermal conduction from each other by a size effect.

Accordingly, the hot plate according to the present embodiment is intended to manufacture a hot plate capable of transmitting a uniform temperature distribution to the wafer by using the difference in thermal conductivity due to the size effect.

Embodiments provide a method of manufacturing a hot plate capable of uniform heat transfer to a wafer positioned on a susceptor and a hot plate manufactured thereby.

Hot plate manufacturing method according to an embodiment, preparing a first barrier layer; Stacking a first heat transfer layer on the first barrier layer; And stacking a second barrier layer on the first heat transfer layer, wherein the first barrier layer or the second barrier layer comprises a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers. Include.

Hot plate according to the embodiment, the first barrier layer; A first heat transfer layer on the first barrier layer; And a second barrier layer positioned on the first heat transfer layer, wherein the first barrier layer or the second barrier layer includes a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers.

The hot plate according to the embodiment includes a heat transfer layer positioned between the barrier layer and the barrier layer. In addition, the barrier layer is formed by stacking the first sub nano barrier layer and the second sub nano barrier layer to each other.

Since the barrier layer is stacked in a plurality of bilayers or a plurality of multilayers having a plurality of nano-sizes, the barrier layer may have a very low thermal conductivity.

Therefore, the heat transfer in the horizontal direction may be superior to the heat transfer in the vertical direction in the heat transfer layers positioned between the barrier layers.

Accordingly, when the susceptor size increases with increasing wafer size, it is possible to supply uniform thermal energy to all areas of the wafer by reducing the temperature gradient in the horizontal direction from the increased upper surface area of the susceptor.

1 is an exploded view of a deposition apparatus according to an embodiment.
2 is a diagram illustrating a deposition apparatus according to an embodiment.
3 is a perspective view illustrating a hot plate and a wafer according to an embodiment.
FIG. 4 is a plan view of FIG. 3 taken along the AA ′ direction.
5 is a diagram illustrating a layered structure of a hot plate according to an embodiment.
6 illustrates a layered structure of a barrier layer according to an embodiment.
7 is a view showing a process diagram of a hot plate manufacturing method according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are cross-sectional views of a deposition apparatus according to an embodiment.

1 and 2, the deposition apparatus includes a chamber 100, a susceptor 200 located in the chamber, a hot plate 300 located in the susceptor 200, and a source into which a reaction gas is introduced. It may include a gas line 400 and an induction coil 500 surrounding the outer periphery of the chamber 100.

The chamber 100 may have a cylindrical tube shape. Alternatively, the chamber 100 may have a rectangular box shape. The chamber 100 may accommodate the susceptor 200. In addition, although not shown in the drawings, one side of the chamber 100 may be further provided with a gas supply for introducing a precursor and the gas discharge for discharging the gas.

In addition, both ends of the chamber 100 are hermetically sealed, and the chamber 100 may prevent external gas inflow and maintain a degree of vacuum. The chamber 100 may include quartz having high mechanical strength and excellent chemical durability. In addition, the chamber 100 has improved heat resistance.

In addition, a heat insulating part may be further provided in the chamber 100. The heat insulating part may perform a function of preserving heat in the chamber 100. Examples of the material used as the heat insulating part include nitride ceramics, carbide ceramics or graphite.

The susceptor 200 is disposed in the chamber 100. The susceptor 200 accommodates a substrate such as the hot plate and the wafer (W).

The susceptor 200 may include graphite having high heat resistance and easy processing to withstand conditions such as high temperature. In addition, the susceptor 200 may have a structure in which silicon carbide is coated on the graphite body. In addition, the susceptor 200 may be induction heated by itself.

The reaction gas supplied to the susceptor 200 may be decomposed into radicals by heat, and in this state, may be deposited on the wafer W or the like. For example, MTS may be decomposed into radicals containing silicon or carbon, and a silicon carbide epitaxial layer may be grown on the wafer (W). In more detail, the radical may be CH ₃ ·, CH ₄ , SiCl ₃ · or SiCl ₂ ·.

3 is a perspective view illustrating a hot plate and a wafer according to an embodiment, and FIG. 4 is a plan view of FIG. 3 taken along the line AA ′.

3 and 4, the wafer may be positioned on the hot plate 300. The wafer may be positioned on the hot plate 300 accommodated in the chamber 100 to react with a reactant supplied to the susceptor 200 to grow an epitaxial layer on the wafer. The hot plate 300 may transfer heat by the induction coil to the wafer.

5 is a diagram illustrating a layered structure of a hot plate according to an embodiment. 6 is a view showing the layer structure of the barrier layer according to the embodiment.

5 and 6, the hot plate 300 according to the embodiment may include a first barrier layer 320a; A first heat transfer layer 310a positioned on the first barrier layer 320a; And a second barrier layer 320b disposed on the first heat transfer layer 310a, wherein the first barrier layer 320a or the second barrier layer 320b includes a plurality of first sub-nano barrier layers ( 311) and a plurality of second sub-nano barrier layers 321.

In addition, the hot plate 300 according to the embodiment, the second heat transfer layer 310b located on the second barrier layer 320b; And a third barrier layer 320c disposed on the second heat transfer layer 310b, wherein the third barrier layer 320c includes a plurality of first sub-nano barrier layers 311 and a plurality of second layers. The sub nanobarrier layer 321 may be included.

The hot plate 300 may be formed by alternately stacking the heat transfer layer and the barrier layer. The hot plate 300 may be formed by alternately stacking a plurality of barrier layers and heat transfer layers in addition to the first, second and third barrier layers and the first and second heat transfer layers. In addition, by coating the upper surface of the hot plate 300 with silicon carbide having a thickness of 100㎛ or more, it is possible to prevent contamination of the hot plate 300 even at a high temperature of 900 ℃ or more.

The first barrier layer 320a or the second barrier layer 320b may be formed by alternately stacking a plurality of first sub nano barrier layers 311 and a plurality of second sub nano barrier layers 321. . The sub heat transfer layer 311, the first sub nano barrier layer 311, and the second sub nano barrier layer 321 may be formed as a layer of a nano size unit and stacked. Preferably, the thickness of the first sub nano barrier layer 311 may be 2 nm to 50 nm, and the thickness of the second sub nano barrier layer 321 may be 2 nm to 50 nm. In addition, the thickness of the first barrier layer 320a or the second barrier layer 320b formed by alternately stacking the first sub nano barrier layer 311 and the second sub nano barrier layer is 0.5 μm to 100. May be μm. Preferably, the thickness of the first barrier layer 320a or the second barrier layer 320b may be 30% or more of the thickness of the heat transfer layer 310.

The first barrier layer 320a or the second barrier layer 320b may be formed by alternately stacking a plurality of sub nanobarrier layers in addition to the plurality of first sub nano barrier layers and the plurality of second sub nano barrier layers. have.

The first heat transfer layer 310a may be located on the first barrier layer 320a. The first heat transfer layer 310a may include an aluminum nitride layer (AlN layer), a hafnium nitride layer (HfN layer), or a silicon carbide layer (SiC layer). In addition, the second barrier layer 320b is stacked on the first heat transfer layer 310a so that the first heat transfer layer 310a is disposed between the first barrier layer 320a and the second barrier layer 320b. It can be located at The heat transfer layer may have a thickness of 500 nm or more and 500 μm or less.

The heat transfer layer may include an aluminum nitride layer, a hafnium nitride layer, or a silicon carbide layer. Specifically, the aluminum nitride layer may be used when the temperature of the hot plate is less than 1000 ° C., and when the temperature of the hot plate is less than 2800 ° C., it may be used.

In addition, the barrier layer may include a silicon carbide layer, a tantalum carbide layer (TaC layer), a hafnium nitride layer, an aluminum nitride layer, a titanium nitride (TiN layer), or a tantalum nitride (TaN layer). Preferably, the first sub nano barrier layer 311 or the second sub nano barrier layer 321 of the barrier layer may be a tantalum carbide layer, a hafnium nitride layer, a silicon carbide layer, an aluminum nitride layer, a titanium nitride layer, or a nitride. It may comprise a tantalum layer.

Specifically, in the case of a susceptor or a hot plate used at a high temperature of 1000 ° C. or more, a silicon carbide layer, a hafnium nitride layer, or a tantalum carbide layer may be used. The layer can be used as a barrier layer. In addition, when using at 1000 degreeC, the aluminum nitride layer or the titanium nitride layer can be used as a barrier layer.

The first sub nano barrier layer 311 and the second sub nano barrier layer 321 may be alternately stacked to form a barrier layer. Preferably, a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers may be alternately stacked to form a barrier layer.

The thermal conductivity of the barrier layer may be about 10 W / mK or less, and the thermal conductivity of the heat transfer layer including the silicon carbide layer may be about 100 W / mK or more.

In the first, second or third barrier layer, the thermal conductivity may be very low compared to the heat transfer layer. In general, the thermal conductivity of a material is a constant value unique to the material, but if the material is coated or deposited in nano size, the thermal conductivity of the individual nano size material may be very low compared to the bulk material before cutting.

Accordingly, the barrier layer formed by alternately stacking the barrier layer, that is, the nano-sized first sub nano barrier layer 311 and the second sub nano barrier layer 321, may have a very low thermal conductivity. Preferably, the thermal conductivity of the barrier layer may be 10 W / mK or less. Accordingly, in the heat transfer layer positioned between the barrier layers, anisotropic thermal conduction in which heat transfer is superior in the horizontal direction may be induced.

As the heat transfer in the horizontal direction in the heat transfer layer of the hot plate 300 is advantageous, the uniform temperature distribution is possible in the hot plate 300 as a whole, the material located on the hot plate 300, for example Uniform thermal energy can be supplied to the wafer. Therefore, since the epitaxial layer can be grown uniformly on the wafer, the electrical characteristics of the device to which the same is applied can be improved.

7 is a view showing a process diagram of a hot plate manufacturing method according to an embodiment.

Referring to FIG. 7, the method for manufacturing a hot plate according to the embodiment may include preparing a first barrier layer (ST10); Stacking a first heat transfer layer on the first barrier layer (ST20); And stacking a second barrier layer on the first heat transfer layer (ST30), wherein the first barrier layer or the second barrier layer includes a plurality of first sub nano barrier layers and a plurality of second sub nano barriers. Layer.

In addition, the hot plate manufacturing method according to the embodiment, further comprising the step of laminating a second heat transfer layer on the second barrier layer and the third barrier layer on the second heat transfer layer, The third barrier layer may include a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers.

The first heat transfer layer or the second heat transfer layer may include an aluminum nitride layer, a hafnium nitride layer, or a silicon carbide layer, and the first sub nano barrier layer or the second sub nano barrier layer may be a tantalum carbide layer or nitride. It may include a hafnium layer, an aluminum nitride layer, a titanium nitride layer, a tantalum nitride layer, or a silicon carbide layer.

The thickness of the first heat transfer layer or the second heat transfer layer may be 500 nm to 500 μm, and the thickness of the first barrier layer, the second barrier layer, or the third barrier layer may be 500 nm to 100 μm. The thickness of the sub barrier layer may be 2 nm to 50 nm, and the thickness of the sub heat transfer layer may be 2 nm to 50 nm.

Hot plate manufactured according to the manufacturing method of the embodiment, as the heat transfer in the horizontal direction in the heat transfer layer of the hot plate 300 is advantageous, the overall uniform temperature distribution in the hot plate 300 is possible, the hot Uniform heat energy may be supplied to a material located on the plate 300, for example, a wafer. Therefore, since the epitaxial layer can be grown uniformly on the wafer, the electrical characteristics of the device to which the same is applied can be improved.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the invention. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (16)

A first barrier layer;
A first heat transfer layer on the first barrier layer;
A second barrier layer on the first heat transfer layer;
A second heat transfer layer on the second barrier layer; And
A third barrier layer on the second heat transfer layer,
The first barrier layer, the second barrier layer or the third barrier layer includes a plurality of first sub nano barrier layers and a plurality of second sub nano barrier layers. delete The method of claim 1,
The first heat transfer layer or the second heat transfer layer is a hot plate comprising a silicon carbide layer, a hafnium nitride layer or an aluminum nitride layer. The method of claim 1,
The first sub nano barrier layer or the second sub nano barrier layer may include a tantalum carbide layer, a hafnium nitride layer, a silicon carbide layer, an aluminum nitride layer, a titanium nitride layer, or a tantalum nitride layer. The method of claim 1,
The thickness of the first heat transfer layer or the second heat transfer layer is 500nm to 500㎛ hot plate. The method of claim 1,
The thickness of the first barrier layer, the second barrier layer or the third barrier layer is 500nm to 100㎛ hot plate. The method of claim 1,
The first sub nanobarrier layer has a thickness of 2 nm to 50 nm. The method of claim 1,
The thickness of the second sub-nanobarrier layer is 2nm to 50nm hot plate. Preparing a first barrier layer;
Stacking a first heat transfer layer on the first barrier layer;
Stacking a second barrier layer on the first heat transfer layer;
Stacking a second heat transfer layer on the second barrier layer;
Stacking a third barrier layer on the second heat transfer layer,
The first barrier layer, the second barrier layer or the third barrier layer comprises a plurality of first sub nano barrier layer and a plurality of second sub nano barrier layer. delete The method of claim 9,
The first heat transfer layer or the second heat transfer layer is a hot plate manufacturing method comprising a silicon carbide layer, a hafnium nitride layer or an aluminum nitride layer. The method of claim 9,
The first sub nano barrier layer or the second sub nano barrier layer may include a tantalum carbide layer, a hafnium nitride layer, a silicon carbide layer, an aluminum nitride layer, a titanium nitride layer, or a tantalum nitride layer. The method of claim 9,
The thickness of the first heat transfer layer or the second heat transfer layer is 500nm to 500㎛ hot plate manufacturing method. The method of claim 9,
The thickness of the first barrier layer, the second barrier layer or the third barrier layer is 500nm to 100㎛ hot plate manufacturing method. The method of claim 9,
The thickness of the first sub-nanobarrier layer is 2nm to 50nm hot plate manufacturing method. The method of claim 9,
The thickness of the second sub-nanobarrier layer is 2nm to 50nm hot plate manufacturing method.

Images