KR20140127954A - SiC THIN FILM DEPOSITION METHOD AND SUSCEPTOR OF THE SAME - Google Patents

SiC THIN FILM DEPOSITION METHOD AND SUSCEPTOR OF THE SAME Download PDF

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Publication number
KR20140127954A
KR20140127954A KR1020130046416A KR20130046416A KR20140127954A KR 20140127954 A KR20140127954 A KR 20140127954A KR 1020130046416 A KR1020130046416 A KR 1020130046416A KR 20130046416 A KR20130046416 A KR 20130046416A KR 20140127954 A KR20140127954 A KR 20140127954A
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KR
South Korea
Prior art keywords
thin film
film
substrate
sic thin
silicon
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Application number
KR1020130046416A
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Korean (ko)
Inventor
장민석
Original Assignee
주식회사 케이엔제이
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Priority to KR1020130046416A priority Critical patent/KR20140127954A/en
Publication of KR20140127954A publication Critical patent/KR20140127954A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

The present invention relates to a method for depositing a SiC thin film and a susceptor deposited with a SiC thin film and, more specifically, to a method for depositing a SiC thin film on a graphite base material and a susceptor deposited with a SiC thin film capable of preventing a SiC thin film from being delaminated or cracked by increasing attachment performance of the SiC thin film by forming a buffer layer, a base material deposited with a SiC thin film, between a graphite base material and a SiC thin film. According to the present invention, the method for depositing a SiC thin film on a graphite base material includes: 1) a step for depositing a silicon (Si) film on a graphite base material; 2) a step of applying silicon carbide (SiC) to a portion of the silicon film by reacting the base material deposited with the silicon film at a high temperature; and 3) a step of depositing the silicon carbide film on the base material.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a SiC thin film deposition method for a graphite substrate, a susceptor for depositing a SiC thin film,

The present invention relates to a SiC thin film deposition method and a susceptor having a SiC thin film deposited thereon. More particularly, the present invention relates to a SiC thin film deposited between a base material of a graphite material and a SiC thin film, To a SiC thin film deposition method and a susceptor on which a SiC thin film is deposited on a graphite substrate which can prevent lifting and cracking of the SiC thin film.

Carbon materials have attracted attention in high temperature applications because of their high strength and modulus, high heat shock resistance and light weight. Carbon materials are widely used as engineering materials and their applications include heaters, electrical contacts, high temperature heat exchangers, rocket nozzles, leading edges of airplane wings, as well as susceptors for manufacturing semiconductors and LED devices And the like. Of the various carbon materials, graphite is the most commonly used material for engineering materials.

However, the graphite material has low chemical resistance at high temperatures and can not be used at high temperatures in oxygen or ammonia gas atmosphere. Therefore, it is very important to increase the chemical resistance of the graphite material so as to be widely used as a high-temperature material.

Therefore, a technique of forming a SiC and Si3N4 coating layer on a graphite material has been disclosed. The physicochemical properties of the graphite having the coating layer formed therein satisfy the requirements in various application fields and are regarded as the most effective method to overcome the drawbacks of the graphite material.

1 is a susceptor 100 for fabricating an LED in which a SiC thin film is deposited on a substrate made of a graphite material. Specifically, a sapphire wafer is used for the LED manufacturing process, and the sapphire wafer is supported by the susceptor 100 and manufactured through various processes. In the conventional susceptor, a plurality of pockets 110 on which a sapphire wafer is placed are formed.

Fig. 2 schematically shows a method of manufacturing the susceptor shown in Fig. As shown, the susceptor 200 is fabricated by forming a SiC thin film 220 on a substrate 210 of graphite material by chemical vapor deposition (CVD).

Specifically, when the SiC thin film 220 is coated on the graphite material by the CVD method, the cubic SiC crystal grows in the hexagonal structure of the graphite. However, since the deposition of the SiC thin film on the graphite is fundamentally not a covalent bond, the SiC thin film 220 is cracked as shown in FIG. 3 to generate a crack 240 or a floating phenomenon 230 (see FIG. 3).

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide a buffer layer in which a substrate surface itself is made of SiC thin film between a substrate of graphite material and a SiC thin film to improve the adhesion of the SiC thin film, A method of depositing a SiC thin film on a graphite substrate and a susceptor on which a SiC thin film is deposited.

According to an aspect of the present invention, there is provided a method of depositing a SiC thin film on a graphite substrate, comprising: 1) depositing a silicon (Si) film on a substrate of graphite; 2) reacting the substrate on which the silicon film is deposited in a high-temperature atmosphere to convert the contact surface of the substrate and the silicon film into silicon carbide (SiC); And 3) depositing a silicon carbide film on the substrate.

Also, before the step 3), it is preferable that the step 3-0) further comprises a step of etching the unreacted silicon film without silicifying the carbonized silicon in the step 2).

Further, in the step 3-0), it is preferable to etch the upper portion of the silicon film.

Also, the above step 1) or step 3) is preferably performed by a chemical vapor deposition (CVD) process.

Also, the step 2) is preferably carried out in a temperature range of 1,400 ° C to 2,000 ° C and a hydrogen atmosphere for 5 hours or more.

The susceptor on which the SiC thin film according to the present invention is deposited includes a substrate made of a graphite material; A buffer layer formed by depositing a silicon (Si) film on the substrate and forming a silicon carbide (SiC) contact surface between the substrate and the silicon film; And a silicon carbide layer deposited on the buffer layer.

The buffer layer or the silicon carbide film is preferably formed by chemical vapor deposition.

The buffer layer is preferably formed by depositing the silicon film on the substrate, and then reacting the silicon film at a temperature of 1,400 ° C to 2,000 ° C and a hydrogen atmosphere for 5 hours or more.

According to the present invention, a buffer layer is formed between the base material of graphite material and the SiC thin film to improve the adhesion of the SiC thin film.

The buffer layer is obtained by forming the graphite surface itself into a thin film of SiC, which improves the adhesion of the SiC thin film formed by chemical vapor deposition.

Thereby preventing lifting and cracking of the SiC thin film.

Figure 1 shows a susceptor supporting a sapphire wafer.
FIGS. 2 and 3 show processes and a susceptor for forming a SiC thin film on a conventional graphite substrate.
Figs. 4 and 5 show a process of forming a SiC thin film on a graphite substrate according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

A method of depositing a SiC thin film on a graphite substrate according to the present invention will be described with reference to FIG.

First, a silicon film (Si) 320 is deposited on a substrate 310 made of graphite.

Next, the substrate 310 on which the silicon film 320 is deposited is allowed to react in a high-temperature atmosphere. When the reaction is performed in the high-temperature atmosphere, the C element of the graphite and the silicon film react with each other on the contact surface 311 between the base material 310 and the silicon film 320 to form a silicon carbide film (buffer layer 330). In other words, the surface of the graphite substrate 310 itself is made into a SiC thin film. At this time, the high-temperature reaction is performed at a temperature of 1,400 ° C to 2,000 ° C for 5 hours in a hydrogen atmosphere.

Next, the unreacted silicon film is dry-etched without silicidation in the high-temperature reaction.

Next, an unreacted silicon film is removed and a SiC thin film (CVD-SiC thin film 340) is deposited on the exposed buffer layer 330 by a chemical vapor deposition method.

Since the buffer layer 330 is formed between the CVD-SiC thin film 340 and the substrate 310, the adhesion is improved as compared with the case where the CVD-SiC thin film 340 is directly deposited on the substrate 310.

Therefore, lifting or cracking of the CVD-SiC thin film 340 can be prevented.

The susceptor 300 manufactured by the above method has a structure in which a buffer layer 330 made of SiC is formed on a base material 310 of graphite material and the graphite base 310 itself is formed on the buffer layer 330, The thin film 340 is formed.

Hereinafter, a method of depositing a SiC thin film on a graphite substrate according to the present invention will be described with reference to FIG.

First, a Si thin film is deposited on a graphite substrate by a chemical vapor deposition method (S11), and a substrate having the Si thin film formed thereon is subjected to high temperature treatment to form a buffer layer (S12). The buffer layer is a SiC thin film made of a graphite base material itself.

Next, the unreacted Si thin film layer is etched without being converted into the SiC thin film by the high-temperature treatment in the Si thin film (S13).

Finally, a SiC thin film is deposited on the buffer layer by chemical vapor deposition (S14).

300: susceptor 310: substrate
311: contact surface 320: Si thin film
330: buffer layer 340: SiC thin film

Claims (8)

1) depositing a silicon (Si) film on a substrate of graphite material;
2) reacting the substrate on which the silicon film is deposited in a high-temperature atmosphere to convert the contact surface of the substrate and the silicon film into silicon carbide (SiC); And
3) depositing a silicon carbide film on the substrate; and depositing a SiC thin film on the substrate.
The method according to claim 1,
Before the step 3)
3-0) The method for depositing a SiC thin film on a graphite substrate according to the above 2), further comprising the step of etching the unreacted silicon film without silicidizing carbonization.
3. The method of claim 2,
Wherein the step 3-0) comprises etching the top of the silicon film.
The method according to claim 1,
Wherein the step 1) or 3) is performed by a chemical vapor deposition (CVD) process.
The method according to claim 1,
Wherein the step 2) is carried out in a temperature range of 1,400 ° C to 2,000 ° C and a hydrogen atmosphere for 5 hours.
A substrate of graphite material;
A buffer layer formed by depositing a silicon (Si) film on the substrate and forming a silicon carbide (SiC) contact surface between the substrate and the silicon film; And
And a silicon carbide layer deposited on the buffer layer.
The method according to claim 6,
Wherein the buffer layer or the silicon carbide film is formed by chemical vapor deposition.
The method according to claim 6,
Wherein the buffer layer is formed by depositing the silicon film on the substrate, and then reacting the silicon film in a hydrogen atmosphere at a temperature of 1,400 ° C to 2,000 ° C for 5 hours.
KR1020130046416A 2013-04-26 2013-04-26 SiC THIN FILM DEPOSITION METHOD AND SUSCEPTOR OF THE SAME KR20140127954A (en)

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KR1020130046416A KR20140127954A (en) 2013-04-26 2013-04-26 SiC THIN FILM DEPOSITION METHOD AND SUSCEPTOR OF THE SAME

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Application Number Priority Date Filing Date Title
KR1020130046416A KR20140127954A (en) 2013-04-26 2013-04-26 SiC THIN FILM DEPOSITION METHOD AND SUSCEPTOR OF THE SAME

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101631797B1 (en) * 2015-04-13 2016-06-20 주식회사 티씨케이 SiC structure for dry etching apparatus and manufacturing method the SiC structure
CN112391675A (en) * 2020-11-16 2021-02-23 南京工业大学 Semiconductor graphite base plate with transition layer structure and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101631797B1 (en) * 2015-04-13 2016-06-20 주식회사 티씨케이 SiC structure for dry etching apparatus and manufacturing method the SiC structure
CN112391675A (en) * 2020-11-16 2021-02-23 南京工业大学 Semiconductor graphite base plate with transition layer structure and preparation method thereof
CN112391675B (en) * 2020-11-16 2021-08-31 南京工业大学 Graphite base plate with transition layer structure for semiconductor and preparation method thereof

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