KR101416583B1 - Susceptor manufacturing method and susceptor of the same - Google Patents

Susceptor manufacturing method and susceptor of the same Download PDF

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KR101416583B1
KR101416583B1 KR1020130046417A KR20130046417A KR101416583B1 KR 101416583 B1 KR101416583 B1 KR 101416583B1 KR 1020130046417 A KR1020130046417 A KR 1020130046417A KR 20130046417 A KR20130046417 A KR 20130046417A KR 101416583 B1 KR101416583 B1 KR 101416583B1
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substrate
susceptor
reaction
deposited
vacuum chamber
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KR1020130046417A
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Korean (ko)
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장민석
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주식회사 케이엔제이
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Abstract

The present invention relates to a susceptor manufacturing method using a substrate transfer-influenced reaction and a susceptor manufactured thereby and, more specifically, to a method and a device for manufacturing a susceptor having the entirely concave surface by obliquely depositing a reactant on a base member since the reactant is reacted by a substance transfer-influenced reaction, and a susceptor manufactured thereby. The method for manufacturing a susceptor having the concave surface comprises a step of supplying reaction gas while controlling the atmosphere of a vacuum chamber and the amount of the reaction gas to occur the substance transfer-influenced reaction; a step of depositing a deposited substance on one side of the surface of the base member to be tapered by allowing the reaction gas to be reacted by the substance transfer-influenced reaction; a step of rotating the base member at a predetermined angle; and a step of obliquely depositing the deposited substance on the other side of the surface of the base member by allowing the reaction gas to be reacted by the substance transfer-influenced reaction.

Description

물질전달 지배 반응에 의한 서셉터 제조방법과 장치 및 그에 의해 제조된 서셉터{SUSCEPTOR MANUFACTURING METHOD AND SUSCEPTOR OF THE SAME}TECHNICAL FIELD The present invention relates to a method and an apparatus for producing a susceptor by mass transferring reaction, and a susceptor manufactured thereby.

본 발명은 물질전달 지배 반응에 의한 서셉터 제조방법과 제조장치 및 그에 의해 제조된 서셉터에 관한 것으로서, 보다 상세하게는 반응물질을 물질전달 지배 반응에 의해 증착반응이 일어나도록 하여 기재상에 반응물질 자체를 경사지게 증착하고 전체적으로 표면이 오목한 서셉터를 제조할 수 있는 방법과 장치 및 그에 의해 제조된 서셉터에 관한 것이다.
More particularly, the present invention relates to a method and apparatus for producing a susceptor by mass transferring reaction and a susceptor manufactured thereby, and more particularly, To a method and apparatus capable of forming a susceptor having a concave surface as a whole and a susceptor manufactured thereby.

탄소 소재는 강도 및 모듈러스가 높고 열 쇼크 내성이 높으며 경량이므로 고온의 응용분야에서 관심을 끌고 있다. 탄소 소재는 엔지니어링 소재로서 널리 사용되는바, 그 응용분야로는 히터, 전기 콘택트, 고온 열교환기, 로켓 노즐, 비행기날개의 리딩에지(leading edge) 뿐 아니라 반도체나 엘이디 소자를 제조하기 위해 필요한 서셉터 등을 들 수 있다. 다양한 탄소 소재들 중에서, 엔지니어링 소재로서 가장 일반적으로 쓰이는 소재는 그라파이트이다.Carbon materials have attracted attention in high temperature applications because of their high strength and modulus, high heat shock resistance and light weight. Carbon materials are widely used as engineering materials and their applications include heaters, electrical contacts, high temperature heat exchangers, rocket nozzles, leading edges of airplane wings, as well as susceptors for manufacturing semiconductors and LED devices And the like. Of the various carbon materials, graphite is the most commonly used material for engineering materials.

그러나, 그라파이트 소재의 경우 고온에서 내화학성이 떨어져 산소나 암모니아가스 분위기에서는 사용할 수 없다. 따라서, 그라파이트 소재를 고온의 소재로서 광범위하게 사용되기 위하여 그 내화학성을 증가시키는 것이 매우 중요하다.However, the graphite material has low chemical resistance at high temperatures and can not be used in an oxygen or ammonia gas atmosphere. Therefore, it is very important to increase the chemical resistance of the graphite material so as to be widely used as a high-temperature material.

따라서 그라파이트 소재에 SiC 및 Si3N4 코팅층을 형성하는 기술이 개시되고 있다. 이와 같이 코팅층이 형성된 그라파이트의 물리화학적 특성은 다양한 응용분야에서 요구되는 조건을 충족시켜 주며, 그라파이트 소재의 단점을 극복할 수 있는 가장 효과적인 방법으로 여겨지고 있다.Therefore, a technique of forming a SiC and Si3N4 coating layer on a graphite material has been disclosed. The physicochemical properties of the graphite having the coating layer formed therein satisfy the requirements in various application fields and are regarded as the most effective method to overcome the drawbacks of the graphite material.

도 1은 그라파이트 재질의 기재(110)에 SiC박막(120)이 증착된 LED 제조용 서셉터(100)이다. 구체적으로 설명하면, LED 제조공정에는 사파이어 웨이퍼가 이용되는데, 사파이어 웨이퍼는 서셉터(100)에 의해 지지되어 여러 공정을 거쳐 제조되는 것이다. 도시된 바와 같이, LED 제조용 서셉터(100)는 상술한 이유로 그라파이트 재질의 기재(110)상에 SiC박막(120)이 코팅되어 있다. 1 is a susceptor 100 for fabricating an LED in which a SiC thin film 120 is deposited on a substrate 110 made of a graphite material. Specifically, a sapphire wafer is used for the LED manufacturing process, and the sapphire wafer is supported by the susceptor 100 and manufactured through various processes. As shown in the figure, the SiC thin film 120 is coated on the base material 110 made of graphite for the above reason.

한편, LED 제조용 서셉터(100)는 사파이어 웨이퍼를 지지하는 표면(바닥면)이 오목하게 형성된 것을 알 수 있다. 이것은 사파이어 웨이퍼 상에 GaN박막을 증착할 때 고온분위기에서 공정을 진행하는데, 이때, 사파이어 웨이퍼가 하방으로 오목하게 변형되기 때문이다. 만약, 사파이어 웨이퍼를 지지하는 서셉터(100)가 오목하지 않고 평탄하게 형성되면 오목하게 변형되는 사파이어 웨이퍼와 전체적으로 접하지 못하게 되고, 그로 인해 사파이어 웨이퍼의 열균일도가 떨어진다. On the other hand, in the LED manufacturing susceptor 100, the surface (bottom surface) supporting the sapphire wafer is concave. This is because when the GaN thin film is deposited on the sapphire wafer, the sapphire wafer undergoes a process under a high-temperature atmosphere, since the sapphire wafer is deformed concavely downward. If the susceptor 100 supporting the sapphire wafer is formed flat without being concaved, the sapphire wafer is not entirely contacted with the concave sapphire wafer, thereby degrading the thermal uniformity of the sapphire wafer.

따라서 사파이어 웨이퍼를 지지하는 서셉터(100)의 표면을 오목하게 형성하여 사파이어 웨이퍼와 전면적에 걸쳐 접하도록 함으로써 사파이어 웨이퍼의 열균일도를 유지할 수 있게 하는 것이다. Therefore, the surface of the susceptor 100 supporting the sapphire wafer is concavely formed and brought into contact with the sapphire wafer over the entire surface, so that the thermal uniformity of the sapphire wafer can be maintained.

도 2는 종래 표면이 오목하게 형성된 서셉터(100)의 제조공정을 나타낸 것이다. 도시된 바와 같이, 그라파이트 등의 기재(110)의 표면(111)을 오목하게 형성한 다음, 기재(110)상에 SiC박막(120)을 화학기상증착방법으로 코팅하여 제조된다. 2 shows a manufacturing process of a susceptor 100 in which a surface is concavely formed. As shown, a surface 111 of a substrate 110 such as graphite is concavely formed, and then a SiC thin film 120 is coated on the substrate 110 by a chemical vapor deposition method.

한편, 상술한 바와 같이, LED 제조용 서셉터(100)의 기재(110)로 그라파이트가 많이 사용되는데, 그라파이트를 15um이하의 오목한 형상(concave 형상)으로 한 쪽으로 기울어지지 않고 굴곡없는 정 오목형상으로 가공하는 것은 용이하지 않다. On the other hand, as described above, graphite is often used as the substrate 110 of the susceptor 100 for fabricating LEDs. The graphite is processed into a concave shape with no concavity It is not easy to do.

따라서 표면이 오목한 서셉터(100)를 제조하기 위한 새로운 공정이 절실하게 요구된다.
Therefore, a new process for manufacturing the susceptor 100 having a concave surface is desperately required.

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 반응물질을 물질전달 지배 반응이 일어나도록 반응시켜 기재상에 반응물질 자체를 오목하게 증착하여 전체적으로 표면이 굴곡없이 오목한 서셉터를 제조할 수 있는 방법과 장치 및 그에 의해 제조된 서셉터를 제공함에 있다.
Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a method and apparatus for reacting a reactive substance to cause a mass transfer reaction, And a susceptor manufactured by the method.

위와 같은 기술적 과제를 해결하기 위하여 본 발명에 의한 오목면이 형성된 서셉터를 제조하는 방법에 있어서, 1) 물질전달 지배반응에 의해 증착이 진행되도록 진공챔버 내의 분위기 및 반응가스의 양을 제어하여 공급하는 단계; 2) 반응가스가 물질전달지배반응에 의해 반응하여 증착물질이 기재의 표면 일측상에 테이퍼지게 증착되는 단계; 3) 상기 기재를 소정각도 회전하는 단계; 및 4) 상기 반응가스가 물질전달지배반응에 의해 반응하여 증착물질이 상기 기재의 표면 타측상에 테이퍼지게 증착되는 단계;를 포함한다. In order to accomplish the above object, the present invention provides a method of manufacturing a susceptor having a concave surface, the method comprising the steps of: 1) controlling the atmosphere and the amount of the reactive gas in the vacuum chamber so that deposition proceeds by a mass transfer- ; 2) the reaction gas is reacted by a mass transfer-dominating reaction so that the deposition material is taperedly deposited on one surface of the substrate; 3) rotating the substrate by a predetermined angle; And 4) the reaction gas is reacted by a mass transferring reaction so that the deposition material is taperedly deposited on the other surface of the substrate.

또한 상기 2)단계는 상기 기재를 90℃ 회전하며, 상기 증착물질이 상기 기재의 표면에 오목하게 증착될 때까지 상기 2)단계와 3)단계를 반복하는 것이 바람직하다. Further, in the step 2), it is preferable to repeat the steps 2) and 3) until the substrate is rotated by 90 DEG C and the deposition material is concavely deposited on the surface of the substrate.

또한 상기 1)단계 및 3)단계는 물질전달지배반응에 의해 증착되도록 1,300℃~1,800℃ 및 1Torr ~300Torr 분위기에서 11~19시간 동안 수행되는 것이 바람직하다. Also, the steps 1) and 3) are preferably performed at 1,300 ° C to 1,800 ° C and 1 Torr to 300 Torr for 11 to 19 hours so as to be deposited by the mass transferring reaction.

또한 상기 증착물질은 탄화규소(SiC)인 것이 바람직하다.The deposition material is preferably silicon carbide (SiC).

본 발명에 의한 서셉터 제조장치는 반응가스가 공급되는 공급구와, 배출되는 배출구가 형성되어 반응이 진행되는 진공챔버; 상기 진공챔버내의 반응이 물질전달자배반응에 의해 증착되도록 상기 진공챔버 내의 온도와 압력, 상기 반응가스의 공급량을 제어하는 제어부; 상기 챔버 내에 구비되어 기재를 지지하는 지그; 및 상기 지그를 회전시키는 회전수단;을 포함한다. The apparatus for manufacturing a susceptor according to the present invention comprises a vacuum chamber in which a reaction gas is supplied and a discharge port is formed to perform a reaction; A control unit for controlling the temperature and pressure in the vacuum chamber and the supply amount of the reaction gas so that the reaction in the vacuum chamber is deposited by the mass transfer carrier reaction; A jig provided in the chamber to support the substrate; And rotating means for rotating the jig.

또한 상기 회전수단은 상기 지그가 적재되는 턴테이블인 것이 바람직하다. Preferably, the rotating means is a turntable on which the jig is mounted.

본 발명에 의한 서셉터는 표면이 평탄하게 형성된 기재; 및 상기 기재 상에 오목하게 증착된 코팅층;을 포함한다. A susceptor according to the present invention includes: a substrate having a flat surface; And a coating layer concavely deposited on the substrate.

또한 상기 기재는 그라파이트 재질이고, 상기 코팅층은 탄화규소막인 것이 바람직하다. Further, it is preferable that the substrate is a graphite material, and the coating layer is a silicon carbide film.

또한 상기 코팅층은 반응가스가 물질전달지배반응에 의해 반응하여 오목하게 증착되는 것이 바람직하다.
Also, it is preferable that the coating layer is concavely deposited by reacting the reaction gas by a mass transferring reaction.

본 발명에 따르면, 반응물질을 물질전달지배반응이 일어나도록 반응시켜 표면이 오목한 서셉터를 제조할 수 있는 효과가 있다. According to the present invention, there is an effect that a reactant can be reacted so that a mass transfer-dominating reaction takes place to produce a susceptor having a concave surface.

다시 말하면, 반응물질이 증착되는 기재의 표면 형태와 무관하게 반응물질 자체를 오목하게 증착할 수 있는 것이다. In other words, the reactive substance itself can be concavely deposited regardless of the surface morphology of the substrate on which the reactive substance is deposited.

따라서 가공성이 낮은 기재를 평판하게 형성한 다음, 반응물질 자체를 오목하게 증착함으로써 전체적으로 오목한 서셉터를 제조할 수 있는 것이다.
Therefore, a substrate having a low processability is formed into a flat plate, and then the reactant itself is concavely deposited to produce a generally concave susceptor.

도 1은 종래 오목면이 형성된 LED 제조용 서셉터를 나타낸 것이다.
도 2는 도 1에 도시된 서셉터의 제조공정을 나타낸 것이다.
도 3은 본 발명에 의한 서셉터의 제조장치를 나타낸 것이다.
도 4는 본 발명에 의한 서셉터의 제조공정 및 제조된 서셉터를 나타낸 것이다. FIG. 1 shows a conventional susceptor for manufacturing an LED having a concave surface.
Fig. 2 shows a process of manufacturing the susceptor shown in Fig.
3 shows an apparatus for producing a susceptor according to the present invention.
4 shows a process for producing a susceptor according to the present invention and a produced susceptor.

이하, 첨부된 도면을 참조하여 본 발명에 의한 실시예을 구체적으로 설명한다. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 3을 참조하여 본 발명에 의한 서셉터 제조장치(1)를 설명한다. The susceptor manufacturing apparatus 1 according to the present invention will be described with reference to Fig.

도시된 바와 같이, 본 발명에 의한 서셉터 제조장치(1)는 반응이 진행되는 진공챔버(10)가 구비된다. 상기 진공챔버(10)는 반응가스가 공급되는 공급구(11)와, 상기 반응가스가 배출되는 배출구(12)가 형성된 통상의 챔버이다. As shown in the drawings, the susceptor manufacturing apparatus 1 according to the present invention includes a vacuum chamber 10 in which a reaction proceeds. The vacuum chamber 10 is a conventional chamber in which a supply port 11 through which a reactive gas is supplied and an outlet 12 through which the reactive gas is discharged are formed.

또한 상기 진공챔버(10)의 내부에는 턴테이블(20)이 구비된다. 상기 턴테이블(20)은 구동모터(미도시)에 의해 회전되는 구성요소이다. A turntable (20) is provided in the vacuum chamber (10). The turntable 20 is a component rotated by a driving motor (not shown).

상기 턴테이블(20)의 상면에는 지그(30)가 적재되며, 상기 지그(30)의 상면에는 기재(210)가 올려진다. 통상 상기 지그(30)는 메카니컬 척 또는 정전척으로 구성될 수 있고, 또한 생략될 수도 있다. 즉, 상기 턴테이블(20)은 기재(210)를 회전시키기 위한 회전수단인 것이다. A jig 30 is mounted on an upper surface of the turntable 20 and a substrate 210 is mounted on an upper surface of the jig 30. [ Generally, the jig 30 may be composed of a mechanical chuck or an electrostatic chuck, and may be omitted. That is, the turntable 20 is a rotating means for rotating the base material 210.

본 발명에 의한 서셉터 제조장치(1)에는 상기 진공챔버(10)의 공정조건을 제어하는 제어부(미도시)가 구비된다. The susceptor manufacturing apparatus 1 according to the present invention is provided with a control unit (not shown) for controlling process conditions of the vacuum chamber 10.

참고로, 진공챔버(10) 내에 반응가스를 공급하고 기재(210)상에 증착하는 반응 메카니즘은 크게 표면반응지배와 물질전달지배반응으로 나뉠 수 있다. 표면반응지배는 상대적으로 저온분위기에서 저속으로 증착되는 기술이고, 물질전달지배반응은 상대적으로 고온분위기에서 고속으로 증착되는 기술이다. For reference, the reaction mechanism of supplying the reaction gas in the vacuum chamber 10 and depositing the substrate 210 on the substrate 210 can be largely divided into surface reaction control and mass transfer control reaction. The surface reaction dominance is a technique that is deposited at a low rate in a relatively low temperature atmosphere, and a mass transfer dominant reaction is a technique of depositing at a high rate in a relatively high temperature atmosphere.

이 중 물질전달지배반응에서의 인자는 공급되는 반응가스의 양이다. 즉, 물질전달지배반응에서는 반응가스를 공급하는 양에 의해 증착률이 결정되므로 반응가스를 공급하는 양에 따라 고갈효과(reactant depletion effect)가 발생된다. Among them, the factor in the mass transfer control reaction is the amount of the reaction gas supplied. That is, in the mass transfer-dominating reaction, the deposition rate is determined by the amount of the reaction gas supplied, so that a reactant depletion effect occurs depending on the amount of the reaction gas supplied.

본 실시예에서의 제어부는 진공챔버(10)내의 반응이 물질전달지배반응로 반응하도록 진공챔버 내의 분위기를 조성한다. 보다 구체적으로 설명하면, 반응가스의 반응이 물질전달지배반응이 되도록 진공챔버(10)의 내부를 1,300℃~1,800℃ 및 1Torr ~300Torr 로 조성한다. 특히, 반응과정에서 고갈효과가 발생되도록 진공챔버 내에 공급되는 반응가스의 양을 제어한다. 그러나 증착물질의 종류나 서셉터의 구조 및 형태에 따라 온도 및 압력이 변하는 것은 당연하다.
The control unit in this embodiment constitutes an atmosphere in the vacuum chamber so that the reaction in the vacuum chamber 10 responds to the mass transfer control reaction. More specifically, the interior of the vacuum chamber 10 is formed at 1,300 ° C to 1,800 ° C and 1 Torr to 300 Torr so that the reaction of the reaction gas becomes a mass transfer-dominated reaction. In particular, the amount of the reaction gas supplied into the vacuum chamber is controlled so that a depleting effect is generated in the reaction process. However, it is a matter of course that the temperature and the pressure vary depending on the kind of the deposition material and the structure and the form of the susceptor.

도 4를 참조하여 본 발명에 의한 서셉터의 제조방법을 설명한다.A method of manufacturing the susceptor according to the present invention will be described with reference to FIG.

먼저, 턴테이블(20)상에 그라파이트 재질의 기재(210)를 적재한다. 상기 기재(210)는 도시된 바와 같이, 표면(바닥면)이 평탄(flat)하게 형성되어 있음을 알 수 있다(도 4의 (a) 참조). First, a base material 210 made of graphite is loaded on the turntable 20. As shown in the drawing, the substrate 210 is flat (bottom surface) (see FIG. 4 (a)).

다음으로, 반응가스를 주입하기 전에 진공챔버내의 반응이 물질전달지배반응이 되도록 진공챔버의 내부 온도 및 압력 등 분위기를 조성한다. Next, before introducing the reaction gas, an atmosphere such as the internal temperature and pressure of the vacuum chamber is established so that the reaction in the vacuum chamber becomes the mass transfer-dominated reaction.

다음으로, 상기 진공챔버의 내부로 반응가스를 주입하여 화학기상증착방법에 의해 기재(210)상에 증착물질(SiC,220a)을 증착한다. 이 때, 고갈효과가 발생하도록 반응가스의 주입량을 설정함으로써, 증착물질(220a)이 기재의 표면 일측부터 타측으로 갈수록 얇아지는 형태, 즉, 경사지게 증착되게 한다(도 4의 (b)참조). 만약, 반응가스를 충분하게 주입하면 진공챔버 내부에서는 고갈효과가 발생되지 않고 그에 따라 증착물질이 기재의 표면 전체에 걸쳐 평탄하게 증착된다. Next, a reactive gas is injected into the vacuum chamber, and a deposition material (SiC, 220a) is deposited on the substrate 210 by a chemical vapor deposition method. At this time, the deposition amount of the reaction gas is set so that the depletion effect is generated, so that the deposition material 220a is thinned (i.e., obliquely deposited) from one side of the substrate surface to the other side (see FIG. If the reactive gas is sufficiently injected, the depletion effect is not generated in the vacuum chamber, and the deposition material is deposited flat over the entire surface of the substrate.

다음으로, 상기 턴테이블(20)을 이용하여 기재(210)를 180°회전시킨다(도 4의 (c)참조). Next, the base material 210 is rotated 180 degrees by using the turntable 20 (see (c) of FIG. 4).

다음으로, 상기 진공챔버의 내부로 반응가스를 주입하여 화학기상증착방법에 의해 기재(210)상에 증착물질(SiC, 220b)을 증착한다. 이 때도 마찬가지로 고갈효과가 발생하도록 반응가스의 주입량을 조절하여 증착물질(220b)이 기재(210)의 표면 타측부터 일측으로 얇아지도록 경사지게 증착하는 것이다(도 4의 (d)참조). Next, a reactive gas is injected into the vacuum chamber, and a deposition material (SiC, 220b) is deposited on the substrate 210 by a chemical vapor deposition method. At this time, the deposition amount of the reaction gas is adjusted so that the depletion effect is generated so that the deposition material 220b is inclined so as to be thinned from the other side of the surface of the substrate 210 (see FIG. 4 (d)).

이와 같이 제조된 서셉터(200)는 기재(210)의 표면은 평탄하지만, 기재상에 증착된 코팅층(220)이 오목하게 증착됨으로써, 서셉터(200)의 표면은 전체적으로 오목하게 형성될 수 있는 것이다. 다시 말하면, 기재(210)의 표면을 오목하게 형성하지 않고 오목면을 갖는 서셉터(200)를 제조할 수 있는 것이다. The surface of the susceptor 200 thus formed is flat, but the coating layer 220 deposited on the substrate is concavely deposited, so that the surface of the susceptor 200 can be formed concavely as a whole will be. In other words, the susceptor 200 having a concave surface can be manufactured without forming the concave surface of the substrate 210.

본 실시예에서는 편의상 턴테이블이 기재를 180°회전시키는 것으로 설명하였으나, 이와 달리 고갈효과에 의한 증착, 기재를 90°회전, 다시 고갈효과에 의한 증착, 다시 기재를 90°회전 등의 방법을 4번 반복하여 증착물질이 표면에 오목하게 증착되도록 하는 것이 바람직하다.
In the present embodiment, the turntable rotates the substrate by 180 ° for convenience. However, the turntable rotates the substrate by 90 °, the deposition by the depletion effect, and the rotation of the substrate by 90 °. It is preferable to repeatedly deposit the deposition material concavely on the surface.

1: 제조장치 10: 진공챔버
11: 공급구 12: 배출구
20: 턴테이블 30: 지그
200: 서셉터 210: 기재
220: 코팅층 220a,220b: 증착물질 1: Manufacturing apparatus 10: Vacuum chamber
11: supply port 12: outlet
20: turntable 30: jig
200: susceptor 210: substrate
220: coating layer 220a, 220b: deposition material

Claims (11)

오목면이 형성된 서셉터를 제조하는 방법에 있어서,
1) 진공챔버의 내부에서 물질전달지배 반응이 일어나도록 상기 진공챔버 내의 분위기를 조성하는 단계;
2) 반응가스가 물질전달지배반응에 의해 반응하여 증착물질이 기재의 표면에 경사지게 증착되는 단계;
3) 상기 기재를 소정각도 회전하는 단계; 및
4) 상기 반응가스가 물질전달지배반응에 의해 반응하여 상기 증착물질이 상기 기재의 표면에 경사지게 증착되는 단계;를 포함하는 것을 특징으로 하는 서셉터 제조방법.
A method of manufacturing a susceptor having a concave surface,
1) creating an atmosphere in the vacuum chamber so that a mass transfer dominating reaction takes place inside the vacuum chamber;
2) the reaction gas is reacted by the mass transferring reaction to deposit the deposition material obliquely on the surface of the substrate;
3) rotating the substrate by a predetermined angle; And
4) The reactive gas is reacted by a mass transferring reaction so that the deposition material is obliquely deposited on the surface of the substrate.
제1항에 있어서,
상기 2)단계는 상기 기재를 90℃ 회전하며, 상기 증착물질이 상기 기재의 표면에 오목하게 증착될 때까지 상기 2)단계와 3)단계를 반복하는 것을 특징으로 하는 서셉터 제조방법.
The method according to claim 1,
Wherein the step 2) is performed by rotating the substrate at 90 캜 and repeating the steps 2) and 3) until the deposition material is concavely deposited on the surface of the substrate.
제1항에 있어서,
상기 진공챔버는 물질전달지배 반응이 일어나도록 1,300℃~1,800℃ 및 1 Torr ~300Torr 로 조성되는 것을 특징으로 하는 서셉터 제조방법.
The method according to claim 1,
Wherein the vacuum chamber is formed at a temperature of 1,300 ° C to 1,800 ° C and 1 Torr to 300 Torr so that a mass transferring reaction occurs.
제1항에 있어서,
상기 2)단계 및 4)단계는 고갈효과(reactant depletion effect)가 발생되도록 상기 반응가스의 주입량을 제어하는 것을 특징으로 하는 서셉터 제조방법.
The method according to claim 1,
Wherein the step 2) and the step 4) are performed to control the injection amount of the reactive gas so that a reactant depletion effect is generated.
제1항에 있어서,
상기 기재는 그라파이트이고, 상기 증착물질은 탄화규소(SiC)인 것을 특징으로 하는 서셉터 제조방법.
The method according to claim 1,
Wherein the substrate is graphite, and the deposition material is silicon carbide (SiC).
삭제delete 삭제delete 삭제delete 표면이 평탄하게 형성된 기재; 및
상기 기재상에 오목하게 증착된 코팅층;을 포함하는 것을 특징으로 하는 서셉터.
A substrate having a flat surface; And
And a coating layer concavely deposited on the substrate.
제9항에 있어서,
상기 기재는 그라파이트 재질이고, 상기 코팅층은 탄화규소막인 것을 특징으로 하는 서셉터.
10. The method of claim 9,
Wherein the substrate is a graphite material, and the coating layer is a silicon carbide film.
제9항에 있어서,
상기 코팅층은 반응가스가 물질전달지배에 의해 반응하고 고갈효과에 의해 오목하게 증착되는 것을 특징으로 하는 서셉터.
10. The method of claim 9,
Wherein the coating layer is reacted by the mass transfer dominant reaction gas and concavely deposited by the depletion effect.
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Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS63198998U (en) * 1987-06-13 1988-12-21
JP2004296778A (en) 2003-03-27 2004-10-21 Toshiba Ceramics Co Ltd Susceptor and its manufacturing method
JP2010185091A (en) * 2009-02-10 2010-08-26 Toyo Tanso Kk Cvd apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63198998U (en) * 1987-06-13 1988-12-21
JP2004296778A (en) 2003-03-27 2004-10-21 Toshiba Ceramics Co Ltd Susceptor and its manufacturing method
JP2010185091A (en) * 2009-02-10 2010-08-26 Toyo Tanso Kk Cvd apparatus

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* Cited by examiner, † Cited by third party
Title
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