JP2013067845A - Device for heating deposition material, vapor deposition apparatus, vapor deposition method and substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus that can contribute to uniformization of a film thickness of a film deposited to a substrate, wherein the vapor deposition apparatus serves as a device for heating a deposition material, which can heat a material container so that the vicinity of the peripheral part of the material container is heated to a higher temperature than the vicinity of the center part thereof, and can readily control a temperature difference between near the center part of a deposition material stored in the material container and near the peripheral part thereof, thereby improving responsiveness to a vaporization quantity change of the deposition material; to provide a vapor deposition method; and to provide a substrate having a film with a uniform film thickness.SOLUTION: The device for heating a deposition material includes: the material container 14 for storing the deposition material 13; a heater 15 disposed on a side of a bottom surface of the material container 14 and heating the deposition material 13; and a temperature control unit for controlling a heating temperature for the deposition material 13 by the heater 15 according to a heating region oriented from the center of the material container 14 toward an outer periphery thereof.

Description

  The present invention includes a vapor deposition material heating apparatus that stores vapor deposition material and heats the vapor deposition material to vaporize the vapor deposition material, a vapor deposition apparatus that includes the vapor deposition material heating apparatus and deposits a film on the substrate, and uses the vapor deposition apparatus to deposit a film on the substrate. The present invention relates to a vapor deposition method for vapor deposition and a substrate on which a film is vapor-deposited using the vapor deposition apparatus.

  2. Description of the Related Art Conventionally, a deposition apparatus that forms a film by depositing a deposition material made of a sublimation material or an organic material on a substrate is well known.

  The vapor deposition apparatus is arranged with the vapor deposition material and the substrate facing each other in the chamber, and the vapor deposition material is appropriately evaporated by ON-OFF heating in a state where the pressure in the chamber is reduced, and the vaporized vapor deposition material is applied to the surface of the substrate. It is deposited to form a film.

  At this time, even if the substrate is separated from the heating source, the radiant heat from the heating source cannot be cut off, and the vapor deposition material is always overheated, and the film thickness of the film adhered near the center of the substrate Becomes thicker than the film thickness of the film adhering to the vicinity of the periphery.

  Therefore, the substrate does not have a uniform film thickness, and it is difficult to say that the product is stable.

  Therefore, by heating the vapor deposition material from around the material container and arranging a plurality of annular control coils adjacently below the bottom surface of the material container, and selectively turning off the power to the control coils to weaken the alternating magnetic field. A technique for partially reducing vaporization of a vapor deposition material is known (see, for example, Patent Document 2).

  In addition, a plurality of linear water pipes that are gradually narrowed (or vice versa) from the width direction center side to the end side are arranged adjacent to each other on the bottom surface of the material container, and the center part of the material container is positioned more than the outer part. A technique for strongly cooling is known (see, for example, Patent Document 3).

JP 2007-002284 A Japanese Patent Application Laid-Open No. 07-070739 Japanese Patent Application Laid-Open No. 07-172984

  However, all of the above-described cooling techniques for the vapor deposition material are temperature management of the vapor deposition material on the surface of the strip film, that is, the vapor deposition surface is substantially rectangular, in the vapor deposition material stored in the rectangular material container. Moreover, since a part of the roll shape is used as the vapor deposition surface, the vapor deposition surface at the time of forming the film is not a flat rectangle, and is actually warped and the distance from the material container is not constant.

  Therefore, there has been a problem that it is difficult to make the film thickness uniform with a control coil or a water pipe that linearly controls the temperature of the material container along the scanning direction (conveying direction) of the belt-like film or the like.

  In other words, since the material container containing the sublimable material or the organic material is vaporized in a vacuum environment inside the chamber, the vapor deposition material evaporated from the material container has a film thickness near the center of the substrate at the periphery. On the other hand, the film was thick in a circular shape, resulting in an uneven film thickness.

  In addition, since the evaporation material cooling techniques described above all control the heating in the cooling direction from the bottom surface side of the material container, the time until the amount of vaporization generated on the molten metal surface of the evaporation material is actually reduced or increased. There is also a problem that it is difficult to control the timing, and the film thickness tends to be uneven.

  Therefore, the present invention can heat the vicinity of the periphery higher than the vicinity of the center of the material container, and can easily control the temperature difference between the vicinity of the center of the vapor deposition material stored in the material container and the vicinity of the periphery. , A vapor deposition material heating device that can increase the responsiveness of the vaporization amount change of the vapor deposition material, and can thus contribute to the uniformization of the film thickness of the film attached to the substrate. An object of the present invention is to provide a substrate having a uniform film thickness.

  In order to solve the above-mentioned problems, a vapor deposition material heating apparatus according to the present invention includes a material container that stores a vapor deposition material, a heating unit that is disposed on the bottom side of the material container and heats the vapor deposition material, and the heating unit A temperature control unit that controls the heating temperature of the vapor deposition material in accordance with a heating region from the center of the material container toward the outer periphery.

  The vapor deposition material heating device of the present invention can heat the vicinity of the periphery higher than the vicinity of the center of the material container, and easily controls the temperature difference between the vicinity of the center and the periphery of the vapor deposition material stored in the material container. In addition, the responsiveness of the evaporation amount change of the vapor deposition material can be increased.

  Moreover, the vapor deposition apparatus and vapor deposition method of this invention can contribute to the uniformization of the film thickness of the film adhering to a board | substrate.

(A) is explanatory drawing of the vapor deposition apparatus which mounts the vapor deposition material heating apparatus which concerns on one Embodiment of this invention, (B) is a top view of the heating part which concerns on one Embodiment of this invention, (C) is this invention It is a top view of the other heating part which concerns on one Embodiment. It is explanatory drawing which shows the relationship between the heating part which concerns on one Embodiment of this invention, and a temperature control part. It is a top view of the other heating part which concerns on one Embodiment of this invention. It is sectional drawing of the heating part which concerns on one Embodiment of this invention. It is sectional drawing of the other heating part which concerns on one Embodiment of this invention.

  Next, a vapor deposition material heating device, a vapor deposition device, a vapor deposition method, and a substrate according to an embodiment of the present invention will be described with reference to the drawings. In addition, the Example shown below is a suitable specific example in the vapor deposition material heating apparatus of this invention, a vapor deposition apparatus, the vapor deposition method, and a board | substrate, Although there may be a case where various technically preferable restrictions may be attached | subjected, this invention The technical scope of the present invention is not limited to these embodiments unless specifically described to limit the present invention. In addition, the constituent elements in the embodiments shown below can be appropriately replaced with existing constituent elements and the like, and various variations including combinations with other existing constituent elements are possible. Therefore, the description of the embodiment described below does not limit the contents of the invention described in the claims.

  1A is an explanatory diagram of a vapor deposition apparatus equipped with a vapor deposition material heating apparatus according to an embodiment of the present invention, FIG. 1B is a plan view of a heating unit according to an embodiment of the present invention, and FIG. C) is a plan view of another heating unit according to one embodiment of the present invention, FIG. 2 is an explanatory diagram showing the relationship between the heating unit and the temperature control unit according to one embodiment of the present invention, and FIG. FIG. 4 is a cross-sectional view of a heating unit according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view of another heating unit according to an embodiment of the present invention. .

  As shown in FIG. 1, the evaporation apparatus 10 includes a chamber 11 whose inside is reduced in pressure by a vacuum device (not shown) to be in a vacuum state of a predetermined pressure, a substrate holding unit 12 disposed above the inside of the chamber 11, 11, a material container 14 containing a vapor deposition material 13 which is a raw material (for example, a sublimation material or an organic material) and is heated to vaporize the vapor deposition material 13 contained in the material container 14. And a film thickness meter 16 as a temperature monitoring unit disposed inside the chamber 11 so as to be adjacent to the substrate holding unit 12.

  The substrate holding unit 12 includes an attachment plate 18 provided on the outer wall 11 a of the chamber 11 via a bracket 17, and a holder 20 provided on the attachment plate 18 and holding the substrate 19.

  In the material container 14, a control plate 21 that partially passes the vaporized vapor deposition material 13 indicated by an arrow is disposed above the molten metal surface of the stored vapor deposition material 13.

  The heating unit 15 is, for example, substantially circular so as to surround the center of the material container 14 as shown in FIG. 1B, or so as to surround the center of the material container 14 as shown in FIG. A plurality of heating elements 22 each having a rectangular shape are provided.

  As shown in FIG. 2, the heating temperature of each heating element 22 is controlled by controlling the current supplied from the current supply unit by the temperature control unit 23 using the independent control units 23a, 23b, 23c, and 23d. . In the present embodiment, each heating element 22 is a quadruple circle or rectangle, and the width increases from the inner peripheral side toward the outer peripheral side. At this time, the widths of the plurality of heating bodies 22 are set so that the area facing the bottom surface of the material container 14 is wider on the outer peripheral side than on the inner peripheral side. In addition, as shown in FIG. 3, for example, each heating element 22 may be arranged in a dense state on the outer peripheral side rather than the inner peripheral side. Therefore, the adjacent interval, width (area), area, etc. of the plurality of heating elements 22 can actually be appropriately changed depending on the size and thickness of the substrate 19 used, the type of the vapor deposition material 13, the film thickness of the coating film, and the like. (Attachment exchange etc.).

  In addition, the heating unit 15 includes a plurality of heating bodies 22 that are continuous in a circle or a rectangle so as to surround the center of the material container 14, and the plurality of heating bodies 22 perform a circular or rectangular heating from the center of the material container 14 toward the outer periphery. An area is formed. In addition, although the non-heating area | region where the heating body 22 does not exist is arrange | positioned alternately with a heating area | region between the adjacent heating bodies 22, it is electrically connected to the non-heating area from a metal body with low heat conductivity, or the heating body 22. An insulator or the like for insulation may be disposed.

  Furthermore, the heating unit 15 may directly heat the vapor deposition material 13 by the heating body 22, and for example, as shown in FIG. 4, a heating plate 26 is disposed between the bottom plate 24 and the intermediate plate 25, and Indirect heating in which a plurality of circular or rectangular heat conductors 27 are arranged on the upper layer of the intermediate plate 25 and then a receiving plate 28 is arranged.

  At this time, as shown in FIG. 5, a metal body 29 having a lower thermal conductivity than the heat conductor 27 may be interposed between the heat conductors 27.

  The film thickness meter 16 is, for example, a film that adheres to the substrate 19 by monitoring the concentration (distribution) of the vapor deposition material 13 vaporized from the material container 14 on a diameter including at least the center of the substrate 19 or on a plane parallel to the substrate 19. The film thickness information is estimated (calculated), and the film thickness information is output to the temperature control unit 23. In addition, the film thickness meter 16 can monitor the film thickness arbitrarily (for example, direct film thickness measurement using an infrared sensor or the like, reflectance measurement, etc.). Thereby, in the temperature control part 23, the control parts 23a, 23b, 23c, and 23d are independently controlled, and the electric current applied to each heating body 22 is adjusted. Further, the film thickness meter 16 may monitor the vaporization amount and the like at the internal temperature of the chamber 11.

  In such a configuration, the vapor deposition material 13 is housed in the material container 14, the inside of the chamber 11 is depressurized and evacuated, and the vapor deposition material 13 is melted and vaporized by heating of the heating unit 15 to coat the surface of the substrate 19. Form.

  At this time, the current applied to the heating body 22 is controlled so that the heating temperature becomes higher toward the peripheral edge (outer periphery) of the material container 14 with respect to the vicinity of the center (center side) of the material container 14.

  Thereby, a larger amount of the vapor deposition material 13 can be attached to the peripheral edge portion of the substrate 19 than in the prior art, and as a result, a film having a uniform film thickness can be formed on the substrate 19.

  By the way, as the vapor deposition material 13 for depositing the film on the substrate 19, for example, in the case of a light emitting material when the substrate 19 is used for an organic EL panel, tris (8-hydroxyquinolinato) aluminum: Alq3), copper phthalocyanine (CuPc), or the like may be used depending on the type and purpose of the substrate 19 on which the film is formed by vacuum deposition technology. It is also possible to form a coating after forming a base metal thin film (for example, gold, silver, chromium, etc.) on the surface of the substrate 19. Furthermore, it is arbitrary also in various conditions, such as the pressure reduction degree (vacuum degree) inside the chamber 11, the magnitude | size and thickness of the board | substrate 19, and the film thickness of a film.

  And in the heating body 22 of this invention, according to such various conditions, you may use the thing of a different space | interval and a width | variety, and it can respond by changing preset heating temperature. In addition, this makes it possible to ensure a more uniform coating of the substrate 19 that cannot be achieved simply by controlling the heating temperature independently.

  Thus, in the present invention, since the heating temperature of the vapor deposition material 13 stored in the material container 14 is controlled, the responsiveness to vaporization of the vapor deposition material 13 is higher than when the vapor deposition material 13 is cooled, Unevenness is less likely to occur in the film thickness of the film attached to the substrate 19, and it can further contribute to uniformity.

  In addition, as a heating means of the heating part 15 in this invention, any means, such as resistance heating, high frequency heating, and laser heating, may be used.

DESCRIPTION OF SYMBOLS 10 ... Evaporating apparatus 11 ... Chamber 11a ... Outer wall 12 ... Substrate cooling device 13 ... Deposition material 14 ... Material container 15 ... Heating part 16 ... Film thickness meter (film thickness monitoring part)
DESCRIPTION OF SYMBOLS 17 ... Bracket 18 ... Mounting plate 19 ... Board | substrate 20 ... Holder 21 ... Control board 22 ... Heating body 23 ... Temperature control part 23a ... Control part 23b ... Control part 23c ... Control part 23d ... Control part 24 ... Bottom plate 25 ... Intermediate | middle board 26 ... Heat plate 27 ... Heat conductor 28 ... Reception plate 29 ... Metal body

Claims (8)

A material container containing a vapor deposition material;
A heating unit arranged on the bottom side of the material container to heat the vapor deposition material;
A temperature control unit for controlling the heating temperature of the vapor deposition material by the heating unit according to a heating region from the center of the material container toward the outer periphery;
A vapor deposition material heating apparatus comprising:   The vapor deposition material heating apparatus according to claim 1, wherein the heating unit includes a plurality of heating bodies, and the arrangement density of the plurality of heating bodies is changed according to the heating region.   The heating unit includes a plurality of heating bodies, and the heating area is divided by the plurality of heating bodies, and the temperature can be set independently according to the divided heating areas. The vapor deposition material heating apparatus as described.   The heating unit includes a plurality of circular or rectangular continuous heating bodies so as to surround the center of the material container. The vapor deposition material heating device according to any one of claims 1 to 3, wherein the heating regions are alternately formed. The heating unit includes a plurality of heating bodies,
The temperature control unit applies current to the plurality of heating bodies so that the heating temperature of the vapor deposition material increases from the inner circumference side to the outer circumference side. 2. The vapor deposition material heating apparatus according to item 1. The vapor deposition material heating device according to any one of claims 1 to 5,
A chamber having the material container disposed therein;
A substrate disposed above the material container within the chamber;
A film thickness monitoring unit that monitors the film thickness of the film deposited on the substrate and outputs the film thickness information to the temperature control unit;
A vapor deposition apparatus comprising: The vapor deposition apparatus according to claim 6,
A depressurizing step of evacuating the chamber;
A film forming step of vaporizing the vapor deposition material stored in the material container by the heating unit to form a film on the surface of the substrate;
Temperature control for controlling the heating unit so that the heating temperature of the vapor deposition material increases from the inner peripheral side to the outer peripheral side by the temperature control unit based on the film thickness information of the substrate monitored by the film thickness monitoring unit. Steps,
A vapor deposition method comprising:   A substrate, wherein a film is formed on the surface by the vapor deposition method according to claim 7 using the vapor deposition apparatus according to claim 6.

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