CN101981223A - Vacuum deposition apparatus and method for adjusting temperature - Google Patents
Vacuum deposition apparatus and method for adjusting temperature Download PDFInfo
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- CN101981223A CN101981223A CN2009801116731A CN200980111673A CN101981223A CN 101981223 A CN101981223 A CN 101981223A CN 2009801116731 A CN2009801116731 A CN 2009801116731A CN 200980111673 A CN200980111673 A CN 200980111673A CN 101981223 A CN101981223 A CN 101981223A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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Abstract
A vacuum deposition apparatus is provided with: a vacuum chamber (1) capable of storing a body (B) which is to have a material deposited thereon and is carried from the outside; a crucible (2) which is arranged inside the vacuum chamber (1) and stores the deposition material (M); a heating source (3) which heats the crucible (2) and vaporizes the deposition material (M); and a plurality of supporting sections (5), which are dispersedly arranged on a bottom section (2c) of the crucible (2), support the crucible (2) and transfer heat between the crucible (2) and a floor section (1a) of the vacuum chamber (1). Temperature distribution can be uniformized and excessive filling of the material can be reduced using the vacuum deposition apparatus.
Description
Technical field
The present invention relates to vacuum deposition apparatus and temperature control method.
Background technology
As everyone knows, for example, in the manufacturing processed of organic EL commodity, vacuum vapour deposition is mainly used in the film that manufacturing is organic EL composition of material with the low molecular compound.In this vacuum vapour deposition, the crucible accommodate organic materials is set in vacuum chamber, by utilizing well heater etc. this crucible heating is made the organic materials gasification, and organic materials is gone up and film forming attached to substrate etc.
And, because the configuration of components in the imbalance of heater configuration or thermal value, the vacuum chamber, the temperature distribution imbalance of the organic materials in the crucible sometimes.When the temperature distribution of the organic materials in the crucible is uneven, because organic materials gasifies lopsidedly, so the film that is formed on the substrate becomes inhomogeneous.And in crucible, organic materials is remaining in a large number under unbalanced state.
As the vacuum deposition apparatus that addresses this is that, there is the device of following patent documentation 1 record.This vacuum deposition apparatus is as lower device.Promptly, in by the crucible that is not constituted by the material of high-frequency induction heating, accommodate a plurality of granular tramp material that constitutes by by the material of high-frequency induction heating, by this granular tramp material of ratio-frequency heating, organic materials is stirred, and meanwhile heat.
Patent documentation 1:(Japan) spy opens the 2004-323915 communique
Yet, in the prior art, because need a considerable amount of granular tramp materials, so when carrying out the gasification of organic materials, organic materials is lower than the height of granular tramp material for organic materials is heated.At this moment, the organic materials that is positioned between granular tramp material is acutely heated.Therefore,, must add new organic materials or replace this organic materials, have the problem of production efficiency or economical efficiency difference when organic material is lower than when a certain amount of.
Summary of the invention
The present invention makes in view of the above problems, and its purpose is to provide a kind of can realize the homogenization of temperature distribution by simple structure, and the vacuum deposition apparatus and the temperature control method of the unnecessary filling that reduces material can be provided.
In order to arrive above-mentioned purpose, the present invention has adopted following means.
Promptly, vacuum deposition apparatus of the present invention is characterised in that, comprising: can accommodate move into from the outside by the vacuum chamber of evaporation body; Be arranged in the described vacuum chamber and accommodate the crucible of deposition material; The heating source that heats described crucible and described deposition material is gasified; Decentralized configuration is in the bottom of described crucible and a plurality of supports that support described crucible and conduct heat between the bottom of described crucible and described vacuum chamber.
According to this structure, because have decentralized configuration in the bottom of described crucible and a plurality of supports that between the bottom of described crucible and described vacuum chamber, conduct heat, so the temperature of the deposition material near the support the crucible is reduced.By the low temperature part is set wittingly, can regulate the temperature of the deposition material in the crucible.Promptly, by decentralized configuration low temperature part, can realize the homogenization of the temperature of deposition material.And, because, can reduce the deviation of the amount of vaporization of deposition material, so can make minimizing each position homogenization in crucible of deposition material by making the temperature homogenization in the crucible.Therefore, can reduce the unnecessary filling of deposition material.
And described heating source is characterised in that the mode big with near the heating quantitative change of described crucible described support constitutes.
According to this structure because the heating quantitative change is big near support, so leave support and the position of not conducting heat to the bottom and near the position of conducting heat to the bottom support section separately the temperature head of deposition material diminish.In view of the above, can realize the homogenization of the temperature of deposition material better.
And the part of described a plurality of supports is characterised in that heat transfer capacity is different with other supports.
According to this structure, the heat transfer capacity of the part of described a plurality of supports is different with other supports, therefore, because deposition material is increased to the heat transfer capacity of the bottom at the position of relatively-high temperature, and, deposition material is reduced to the heat transfer capacity of the bottom at cryogenic relatively position, can realize the homogenization of the temperature of deposition material.And,, can reduce the thermal value of well heater because deposition material is reduced to the heat transfer capacity of the bottom at cryogenic relatively position.
The part of described a plurality of supports is characterised in that sectional area is different with other supports.
The part of described a plurality of supports is characterised in that, is made of the material different with the thermal conductivity of other supports.
The part of described a plurality of supports is characterised in that, makes in the heat transfer that has directivity in the heat conduction to hinder parts between described crucible and described bottom and conduct heat.
And vacuum deposition apparatus of the present invention comprises: can accommodate move into from the outside by the vacuum chamber of evaporation body; Be arranged in the described vacuum chamber and accommodate the crucible of deposition material; The heating source that heats described crucible and described deposition material is gasified.Described heating source is characterised in that, makes according to the position of described crucible described crucible added the heat difference.
According to this structure, heating source makes according to the position of described crucible described crucible is added the heat difference, therefore, make the heating quantitative change at relative elevated position little by deposition material, and deposition material makes the heating quantitative change at position of relative low level big, can realize the homogenization of the temperature of deposition material.
And described heating source is characterised in that, changes thermal value and make described crucible added the heat difference.
And, comprise the control part of controlling described heating source thermal value.Described control part is characterised in that, begins heating as condition with the described deposition material in the described crucible below specified amount and regulates.
According to this structure, regulate owing to below specified amount, beginning heating as condition with deposition material, can reduce the total amount of deposition material and only carry out temperature regulation in the zone of the uneven aggravation of temperature distribution.Therefore, can utilize necessary minimal control to realize the homogenization of the temperature of deposition material effectively.
And described heating source is characterised in that, changes configuration density and makes described crucible added the heat difference.
According to this structure, can realize the homogenization of the temperature of deposition material with simple structure.
And temperature control method of the present invention is the temperature control method in a kind of vacuum deposition apparatus, and this vacuum deposition apparatus comprises: can accommodate move into from the outside by the vacuum chamber of evaporation body; Be arranged in the described vacuum chamber and accommodate the crucible of deposition material; The heating source that heats described crucible and described deposition material is gasified; Be arranged between the bottom of the bottom of described crucible and described vacuum chamber and support a plurality of supports of described crucible.Temperature control method of the present invention is characterised in that, grasps the high-temperature portion that the temperature in the described deposition material becomes higher relatively in advance, and near the described bottom described high-temperature portion is provided with described support, and the temperature of described high-temperature portion is reduced.
According to this structure, because grasp the high-temperature portion of deposition material in advance, and near the bottom described high-temperature portion is provided with described support, and the temperature of described high-temperature portion is reduced, so and the difference between the relatively low position of the temperature in the deposition material diminish.In view of the above, the deviation of the temperature distribution of the deposition material in the crucible is diminished, and can regulate the temperature of the deposition material in the crucible.Therefore, can realize the homogenization of the temperature of deposition material, and make the homogenization that easily realizes temperature distribution become possibility.And, because by realizing the homogenization of temperature distribution, the amount of vaporization of deposition material becomes necessarily,, and make the unnecessary filling of minimizing material become possibility so each position of minimizing in crucible that can make deposition material is about equally.
And temperature control method of the present invention is the temperature control method in a kind of vacuum deposition apparatus, and this vacuum deposition apparatus comprises: can accommodate move into from the outside by the vacuum chamber of evaporation body; Be arranged in the described vacuum chamber and accommodate the crucible of deposition material; The heating source that heats described crucible and described deposition material is gasified; Be arranged between the bottom of the bottom of described crucible and described vacuum chamber and support a plurality of supports of described crucible.Temperature control method of the present invention is characterised in that, grasps the temperature distribution of described deposition material in advance, changes the heat transfer capacity to the described bottom of at least a portion in described a plurality of supports, and the temperature distribution of regulating described deposition material.
According to this structure, grasp the temperature distribution of described deposition material in advance, near the bottom described high-temperature portion is provided with described support and changes heat transfer capacity to described bottom, and the temperature distribution of regulating described deposition material.Promptly, near the heat transfer capacity of the support the relatively low position of temperature is reduced, near the heat transfer capacity of the support the higher relatively position of temperature is increased.In view of the above, the deviation of the temperature distribution of the deposition material in the crucible is diminished, and can regulate the temperature of the deposition material in the crucible.Therefore, can realize the homogenization of the temperature of deposition material, and make the homogenization that easily realizes temperature distribution become possibility.And, because by realizing the homogenization of temperature distribution, the amount of vaporization of deposition material becomes necessarily,, and make the unnecessary filling of minimizing material become possibility so each position of minimizing in crucible that can make deposition material is about equally.
And temperature control method of the present invention is the temperature control method in a kind of vacuum deposition apparatus, and this vacuum deposition apparatus comprises: can accommodate move into from the outside by the vacuum chamber of evaporation body; Be arranged in the described vacuum chamber and accommodate the crucible of deposition material; The heating source that heats described crucible and described deposition material is gasified.Temperature control method of the present invention is characterised in that, grasps the temperature distribution of described deposition material in advance, changes near the described heat that adds of described high-temperature portion, and the temperature distribution of regulating described deposition material.
According to this structure, grasp the temperature distribution of described deposition material in advance, near the bottom described high-temperature portion is provided with described support and changes heat transfer capacity to described bottom, and the temperature distribution of regulating described deposition material.Promptly, heat transfer capacity is increased, near the support the higher relatively position of temperature reduces heat transfer capacity.In view of the above, the deviation of the temperature distribution of the deposition material in the crucible is diminished, and can regulate the temperature of the deposition material in the crucible.Therefore, can realize the homogenization of the temperature of deposition material, and make the homogenization that easily realizes temperature distribution become possibility.And, because by realizing the homogenization of temperature distribution, the amount of vaporization of deposition material becomes necessarily,, and make the unnecessary filling of minimizing material become possibility so each position of minimizing in crucible that can make deposition material is about equally.
According to vacuum deposition apparatus of the present invention and temperature control method, can realize the homogenization of temperature distribution with simple structure, and can reduce the unnecessary filling of material.
Description of drawings
Figure 1A is that the summary of the vacuum deposition apparatus A1 of first embodiment of the present invention constitutes sectional view.
Figure 1B is a vertical view of seeing the vacuum deposition apparatus A1 of first embodiment of the present invention from the P direction.
Fig. 2 A is that the summary of the vacuum deposition apparatus A1 of first embodiment of the present invention constitutes sectional view, an example of expression heating action.
Fig. 2 B is that the summary of the vacuum deposition apparatus A1 of first embodiment of the present invention constitutes sectional view, an example of expression heating action.
Fig. 2 C is that the summary of the vacuum deposition apparatus A1 of first embodiment of the present invention constitutes sectional view, an example of expression heating action.
Fig. 3 is that the summary of the vacuum deposition apparatus A2 of second embodiment of the present invention constitutes sectional view.
Fig. 4 is that the summary of the vacuum deposition apparatus A3 of the 3rd embodiment of the present invention constitutes sectional view.
Fig. 5 is that the summary of the vacuum deposition apparatus A4 of the 4th embodiment of the present invention constitutes sectional view.
The explanation of Reference numeral
1 vacuum chamber
The 1a bottom
2,12 crucibles
The 2c bottom
3 heating sources
5 (the supports of 5a～5d)
6 conduct heat hinders parts
7 control parts
The B substrate
M, m organic materials (deposition material)
A1, A2, A3, A4 vacuum deposition apparatus
Embodiment
Describe below with reference to the mode of accompanying drawing enforcement of the present invention.
Figure 1A is that the summary of the vacuum deposition apparatus A1 of first embodiment of the present invention constitutes sectional view.
Shown in Figure 1A, vacuum deposition apparatus A1 comprises: vacuum chamber 1; Be arranged in this vacuum chamber 1 and the crucible 2 of accommodating organic materials M; The heating source 3 that heats this crucible 2 and organic materials M is gasified; Decentralized configuration is at the bottom of crucible 2 2c and support crucible 2, and three supports 5 that conduct heat between the bottom 1a of crucible 2 and vacuum chamber 1.
Vacuum chamber 1 is can taking out of, move into substrate B from the outside, and the mode that can reduce pressure constitutes.In this vacuum chamber 1, substrate B is remained on top by substrate maintaining part (not shown).
Crucible 2 is elongated case shape things that the wall portion of a part opens, and is made of metal (for example, titanium or stainless steel).This crucible 2 is bearing on the bottom 1a of vacuum chamber 1 via support 5.Crucible 2 is configured to: the length direction that makes its bottom surface is towards horizontal direction, and makes the plate face of the peristome of accepting hole 2a towards the substrate B that remains on the substrate maintaining part.
The constructional characteristic of this crucible 2 is: an end 2b side of the length direction of its bottom surface has becomes cryogenic tendency.
Particularly, heating source 3 is made of the well heater of electrical heating type, and its bearing of trend is towards the width of the bottom surface of crucible 2.And a plurality of heating sources 3 of configuration below crucible 2.This heating source 3 is configured on the heat Insulation film 4 that is arranged on the 1a of bottom.
On the length direction of this support 5 with about equally the bottom surface that is disposed on crucible 2, and make with the long limit of the roughly the same size of the size of the width of crucible 2 towards the width of the bottom surface of crucible 2 and crucible 2 is supported.
Then, utilize Fig. 2 A～Fig. 2 C that the action of the vacuum deposition apparatus A1 that is made of said structure is described.
At first, shown in Fig. 2 A, the substrate B that is moved in the vacuum chamber 1 by substrate maintaining part (not shown) is maintained at top in vacuum chamber 1.Then, in vacuum chamber 1, reduce pressure, thereby become the specified vacuum degree.
Secondly, by heating source 3, crucible 2 is heated to about 200～400 ℃.This crucible 2 is housed in organic materials M in the accepting hole 2a.In addition, because heating source is via heat Insulation film 4, so to the crucible 2 of top radiative transfer well.
Be applied to the organic materials that heat on the crucible 2 is passed to accepting hole 2a by this heating source 3, and be passed to bottom 1a via support 5.Promptly, the heat that the is passed to organic materials M heat that maybe should be passed to organic materials M is passed to bottom 1a.Therefore, under the situation of overlooking, the temperature of the organic materials M of support 5 near becomes lower than other positions.Promptly, in organic materials M, there are three in the position that temperature is low with roughly the same interval.
Along with crucible 2 is heated, organic materials M gasifies (representing with meeting m), and attached to the plate face of substrate B.In crucible 2, shown in Fig. 2 B, in the position of relatively-high temperature, organic materials M is more to be gasified, cryogenic relatively position, and organic materials M gasification is few.
And shown in Fig. 2 C, in crucible 2, the organic materials M at the position of relatively-high temperature is gasified entirely, and remaining on the cryogenic relatively position the blocky M that becomes three organic materials M is arranged.
Like this, through the evaporation of specified time, formed by homogeneous at the plate face upper film of substrate B.
As mentioned above, the vacuum deposition apparatus A1 of present embodiment comprises: decentralized configuration is at the bottom of crucible 2 2c, and a plurality of supports 5 that conduct heat between the bottom 1a of crucible 2 and vacuum chamber 1.Therefore, the temperature of the organic materials M near the crucible 2 the support 5 is reduced, and can regulate the temperature of the organic materials in the crucible 2.
Promptly, originally, because on the structural property of crucible 2, an end 2b was partial to low temperature, so a low-temp. portion is formed 2b side at one end, produced uneven on temperature distribution.But, according to vacuum deposition apparatus A1, because the low temperature part can be set consciously and be separated into three, so can realize the homogenization of the temperature of organic materials M.
Moreover, because by temperature distribution by homogenization, the amount of vaporization homogenization of organic materials M so the minimizing of organic materials M each position in crucible 2 is roughly the same, makes the unnecessary filling that reduces organic materials M become possibility.
In addition, replacing said structure, also can be near support 5, the structure that adds the heat increase of 3 pairs of crucibles 2 of heating source.Like this, leave support 5 not to position that bottom 1a conducts heat and near the support section 5 on the position that bottom 1a conducts heat separately the temperature head of organic materials M diminish.In view of the above, can realize the homogenization of the temperature of organic materials M better.
And, be not only the below of crucible 2, also can the side or above have heating source 3.By utilizing this structure to heat whole crucible 2, can prevent that the material in the crucible 2 from adhering to.
And heating source 3 also can be provided with towards the length direction of the bottom surface of crucible 2.As long as promptly can heating crucible 2, the direction that is provided with of heating source 3 be disregarded.
(second embodiment)
Then, second embodiment of the present invention is described.
Fig. 3 is that the summary of the vacuum deposition apparatus A2 of second embodiment of the present invention constitutes sectional view.In addition, in the following description,, use same-sign, and omit its explanation for the textural element identical with Fig. 1～3.
As shown in Figure 3, vacuum deposition apparatus A2 is constituted as: (heat transfer capacity of the bottom 1a of 5a～5c) is different with other supports 5 respectively to three supports.
The support 5a of one end 2b is via hinder parts 6 upright being located on the 1a of bottom in the heat transfer that has directivity in the heat conduction.This heat transfer hinders parts 6 and is used to hinder heat passage to bottom 1a from support 5a, for example, can use carbon plate or stainless steel plate.
Compare with support 5c with support 5a, little with the sectional area (with the orthogonal section of heat transfer direction) of the 5b of support section of support 5a adjacency.
Identical with the support 5 of the 5c of support section of support 5b adjacency and above-mentioned first embodiment.In addition, the sectional area of support 5a and support 5c are about equally.
According to this structure, the size of thermal conductivity becomes following order.Support 5a＜support 5b＜support 5c promptly.
According to this structure, as mentioned above,, become minimum to the heat transfer capacity of bottom 1a from support 5a even become cryogenic tendency because a side of the length direction of constructional characteristic crucible 2 has, big according to the order change of support 5b, 5c.Therefore, the temperature contrast on each position of organic materials M is diminished.In view of the above, can further realize the homogenization of the temperature of deposition material.
In addition, replacing said structure, also can be to constitute support 5 with the material different with the miscellaneous part thermal conductivity, thus the structure that heat transfer capacity is changed.And, on the basis of having used the obstruction parts 6 that conduct heat, also can change the section mould, also can replace its formation with the different material of thermal conductivity.
(the 3rd embodiment)
Then, the third embodiment of the present invention is described.
Fig. 4 is that the summary of the vacuum deposition apparatus A3 of the 3rd embodiment of the present invention constitutes sectional view.
As shown in Figure 3, in vacuum deposition apparatus A3, crucible 12 is had two support 5d supportings of identical heat transfer capacity.And in vacuum deposition apparatus A3, in by the zone of this two support 5d clamping, the interval of heating source 3 is big, and, feel little at the outside in this zone heating source 3.Promptly, in by the zone of two support 5d clamping, the heating quantitative change of crucible 12 is little, and is big in the heating quantitative change of its both sides.
According to this structure, in crucible 12, even because constructional characteristic, the both sides of length direction have and become cryogenic tendency and since these both sides to add heat big, near the central authorities little can be realized the homogenization of the temperature of organic materials M.
(the 4th embodiment)
Then, the 4th embodiment of the present invention is described.
Fig. 5 is that the summary of the vacuum deposition apparatus A4 of the 4th embodiment of the present invention constitutes sectional view.
Vacuum deposition apparatus A4 comprises: the control part 7 of the thermal value of control heating source 3.In this control part 7, store: in the inside of crucible 12, organic materials M pairing information of the time below specified amount.And after evaporation began, passed through should the time if control part 7 identifies, and then the thermal value of each heating source 3 is regulated.
If promptly passed through the specified time, the then temperature distribution of the organic materials M in the crucible 12 homogenization that becomes.
According to this structure, only reduce, and the zone of the imbalance of temperature distribution aggravation carries out temperature regulation in the total amount of organic materials M, therefore, can utilize necessary MIN control to realize the homogenization of the temperature of organic materials M effectively.
In addition, replace said structure, also can constitute: the transmitter of the total amount by detecting organic materials M etc. begins control.
In addition, the sequence of operation shown in the above-mentioned embodiment, perhaps the different shape of each structure unit, combination etc. are an example, can carry out various changes according to design requirements etc. in the scope that does not break away from purport of the present invention.
For example, identical with the structure of above-mentioned embodiment, if by measure waiting high-temperature portion of grasping organic materials M in advance, and near the bottom 2c this high-temperature portion is provided with support 5, then this high-temperature portion can be adjusted to low temperature.In addition, the position estimating that also can remain in the organic materials M the crucible 12 behind evaporation goes out high-temperature portion.
Similarly, also can wait the temperature distribution of grasping organic materials M in advance,, and change the sectional area of support 5, the material that heat transfer hinders parts 6 etc. for attemperation distributes by measuring.
And in the above-described embodiment, though the crucible 2 that the part of the wall portion of crucible 2 is opened is applicable to the present invention, the crucible with the peristome that is used to spray steam also can be applicable to the present invention.Similarly, the crucible that has worn a plurality of little peristomes on the part of wall portion also can be applicable to the present invention.
And, in the above-described embodiment, though the crucible 2 that is made of metal is applicable to the present invention,, replace metal and the crucible that is made of nonmetal (for example, graphite, quartz) also is applicable to the present invention.
The application based on December 24th, 2008 spy in Japanese publication be willing to advocate right of priority for 2008-327518 number, and here cite its content.
Claims (13)
1. a vacuum deposition apparatus is characterized in that, comprising:
Can accommodate move into from the outside by the vacuum chamber of evaporation body;
Be arranged in the described vacuum chamber and accommodate the crucible of deposition material;
The heating source that heats described crucible and described deposition material is gasified;
Decentralized configuration is in the bottom of described crucible and a plurality of supports that support described crucible and conduct heat between the bottom of described crucible and described vacuum chamber.
2. as the vacuum deposition apparatus of claim 1 record, it is characterized in that described heating source is constituted as near the heat that adds of the described support described crucible of increase.
3. as the vacuum deposition apparatus of claim 1 record, it is characterized in that the heat transfer capacity of the part of described a plurality of supports is different with other support sections.
4. as the vacuum deposition apparatus of claim 3 record, it is characterized in that the sectional area of the part of described a plurality of supports is different with other support sections.
5. as the vacuum deposition apparatus of claim 3 record, it is characterized in that the part of described a plurality of supports is made of the thermal conductivity material different with other supports.
6. as the vacuum deposition apparatus of claim 3 record, it is characterized in that the part of described a plurality of supports makes in the heat transfer that has directivity in the heat conduction and hinders parts between described crucible and described bottom and conduct heat.
7. a vacuum deposition apparatus is characterized in that, comprising:
Can accommodate move into from the outside by the vacuum chamber of evaporation body;
Be arranged in the described vacuum chamber and accommodate the crucible of deposition material;
The heating source that heats described crucible and described deposition material is gasified,
Described heating source makes according to the position of described crucible described crucible is added the heat difference.
8. as the vacuum deposition apparatus of claim 7 record, it is characterized in that, make described crucible added the heat difference thereby described heating source changes thermal value.
9. as the vacuum deposition apparatus of claim 8 record, it is characterized in that,
Control part with thermal value of the described heating source of control,
Described control part with the described deposition material in the described crucible be below the specified amount as condition, regulate and begin heating.
10. as the vacuum deposition apparatus of claim 7 record, it is characterized in that, make described crucible added the heat difference thereby described heating source changes configuration density.
11. a temperature control method, it is the temperature control method in the vacuum deposition apparatus, and this vacuum deposition apparatus comprises:
Can accommodate move into from the outside by the vacuum chamber of evaporation body;
Be arranged in the described vacuum chamber and accommodate the crucible of deposition material;
The heating source that heats described crucible and described deposition material is gasified;
Be arranged between the bottom of the bottom of described crucible and described vacuum chamber and support a plurality of supports of described crucible, described temperature control method is characterised in that,
Grasp the high relatively high-temperature portion of temperature in the described deposition material in advance, near the described bottom described high-temperature portion is provided with described support, and the temperature of described high-temperature portion is reduced.
12. a temperature control method, it is the temperature control method in the vacuum deposition apparatus, and this vacuum deposition apparatus comprises:
Can accommodate move into from the outside by the vacuum chamber of evaporation body;
Be arranged in the described vacuum chamber and accommodate the crucible of deposition material;
The heating source that heats described crucible and described deposition material is gasified;
Be arranged between the bottom of the bottom of described crucible and described vacuum chamber and support a plurality of supports of described crucible, described temperature control method is characterised in that,
Grasp the temperature distribution of described deposition material in advance, change heat transfer capacity the described bottom of at least a portion in described a plurality of supports, and the temperature distribution of regulating described deposition material.
13. a temperature control method, it is the temperature control method in the vacuum deposition apparatus, and this vacuum deposition apparatus comprises:
Can accommodate move into from the outside by the vacuum chamber of evaporation body;
Be arranged in the described vacuum chamber and accommodate the crucible of deposition material;
Heat described crucible and make the heating source of described deposition material gasification, described temperature control method is characterised in that,
Grasp the temperature distribution of described deposition material in advance, change near the described heat that adds of described high-temperature portion, and the temperature distribution of regulating described deposition material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP327518/08 | 2008-12-24 | ||
| JP2008327518A JP4468474B1 (en) | 2008-12-24 | 2008-12-24 | Vacuum deposition apparatus and temperature adjustment method |
| PCT/JP2009/004811 WO2010073438A1 (en) | 2008-12-24 | 2009-09-24 | Vacuum deposition apparatus and method for adjusting temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101981223A true CN101981223A (en) | 2011-02-23 |
| CN101981223B CN101981223B (en) | 2013-05-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980111673.1A Expired - Fee Related CN101981223B (en) | 2008-12-24 | 2009-09-24 | Vacuum deposition apparatus and method for adjusting temperature |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4468474B1 (en) |
| KR (1) | KR101255424B1 (en) |
| CN (1) | CN101981223B (en) |
| TW (1) | TWI379914B (en) |
| WO (1) | WO2010073438A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866239A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Linear evaporation source device |
Families Citing this family (7)
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| JPWO2014174803A1 (en) * | 2013-04-22 | 2017-02-23 | 株式会社Ｊｏｌｅｄ | Method for manufacturing EL display device |
| TWI485276B (en) * | 2013-12-05 | 2015-05-21 | Nat Inst Chung Shan Science & Technology | Evaporation apparatus with improved selenium compound film growing quality |
| CN105276980B (en) * | 2014-05-28 | 2017-11-03 | 国核华清（北京）核电技术研发中心有限公司 | ceramic crucible |
| CN104078626B (en) * | 2014-07-22 | 2016-07-06 | 深圳市华星光电技术有限公司 | Heater for OLED material evaporation |
| JP6617198B2 (en) * | 2016-05-13 | 2019-12-11 | 株式会社アルバック | Organic thin film manufacturing apparatus, organic thin film manufacturing method |
| EP3494243B1 (en) * | 2016-08-05 | 2021-12-29 | Flisom AG | Homogeneous linear evaporation source with heater |
| KR102453030B1 (en) * | 2018-06-08 | 2022-10-11 | 가부시키가이샤 알박 | Evaporation source for vacuum deposition equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100503881C (en) * | 2005-01-21 | 2009-06-24 | 三菱重工业株式会社 | Vacuum vapor deposition apparatus |
| JP4696710B2 (en) * | 2005-06-15 | 2011-06-08 | ソニー株式会社 | Vapor deposition apparatus and vapor deposition source |
| KR100645688B1 (en) * | 2005-08-30 | 2006-11-14 | 삼성에스디아이 주식회사 | Heater and vapor deposition source having the same |
| JP4768584B2 (en) * | 2006-11-16 | 2011-09-07 | 財団法人山形県産業技術振興機構 | Evaporation source and vacuum deposition apparatus using the same |
| JP2008208443A (en) * | 2007-02-28 | 2008-09-11 | Sony Corp | Vapor deposition film-forming apparatus, vapor deposition film formation method, and manufacturing method of display device |
| JP2008240015A (en) * | 2007-03-26 | 2008-10-09 | Seiko Epson Corp | Mask vapor deposition method |
-
2008
- 2008-12-24 JP JP2008327518A patent/JP4468474B1/en not_active Expired - Fee Related
-
2009
- 2009-09-24 CN CN200980111673.1A patent/CN101981223B/en not_active Expired - Fee Related
- 2009-09-24 WO PCT/JP2009/004811 patent/WO2010073438A1/en active Application Filing
- 2009-09-24 KR KR1020107021550A patent/KR101255424B1/en active IP Right Grant
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866239A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Linear evaporation source device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010073438A1 (en) | 2010-07-01 |
| CN101981223B (en) | 2013-05-22 |
| JP4468474B1 (en) | 2010-05-26 |
| TWI379914B (en) | 2012-12-21 |
| TW201024438A (en) | 2010-07-01 |
| KR101255424B1 (en) | 2013-04-17 |
| JP2010150577A (en) | 2010-07-08 |
| KR20100116227A (en) | 2010-10-29 |
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