KR20180137512A - Organic Thin Film Manufacturing Device, Organic Thin Film Manufacturing Method - Google Patents

Abstract

Provided is an organic thin film production apparatus capable of stably emitting steam. An organic thin film manufacturing apparatus (10) for supplying heat to a vaporizing container (33) to heat an organic material (37) to discharge vapor, characterized in that an organic material (37) is formed from a growth rate of an organic thin film formed on an object (15) And compares the measured temperature with the calculated temperature of the evaporation vessel 33 and changes the supply speed of the heat supplied to the evaporation vessel 33 according to the temperature deviation. Since the heat fluctuation is small, the vapor emission is stabilized. When the measured growth rate is close to the target growth rate, the change in the amount of heat is reduced and the vapor emission is stabilized.

Description

Organic Thin Film Manufacturing Device, Organic Thin Film Manufacturing Method

TECHNICAL FIELD The present invention relates to a technique for forming an organic thin film, and more particularly to a technique for forming an organic thin film by controlling a growth rate of an organic thin film.

Reference numeral 100 in FIG. 4 denotes a conventional organic thin film production apparatus, which has a vacuum chamber 113. An evaporation source 112 is disposed inside the vacuum chamber 113.

The evaporation source 112 has an evaporation vessel 133 and the substrate 115 to be introduced into the vacuum chamber 113 is allowed to pass or be disposed above the evaporation vessel 133.

The evaporation vessel 133 is hollow, and an organic material 137 made of an organic compound in the form of a powder is arranged inside the hollow.

A heating device 134 is formed in the evaporation vessel 133 and a heating power source 145 is connected to the heating device 134.

The inside of the vacuum chamber 113 is vacuum evacuated by the vacuum evacuation device 128 to form a vacuum atmosphere and the heating device 134 is energized by the heating power supply 145 to generate heat, The evaporation vessel 133 is heated and heated and the organic material 137 disposed in the evaporation vessel 133 is heated by the evaporation vessel 133 whose temperature has risen.

When the organic material 137 is heated to a temperature higher than the evaporation temperature, evaporation (including sublimation) is performed so that a large amount of vapor of the organic material 137 is discharged into the evaporation vessel 133.

A discharge hole 138 is formed at a position facing the deposition target substrate 115 of the evaporation vessel 133. The generated vapor is discharged from the discharge hole 138 into the vacuum chamber 113, 115, a thin film of the organic material 137 is grown on the portion.

In this organic thin film production apparatus 100, a growth rate control circuit 114 for controlling the growth rate of the thin film of the organic material 137 is disposed outside the vacuum chamber 113.

A film thickness sensor 131 is provided inside the vacuum chamber 113. The film thickness sensor 131 is connected to a growth rate control circuit 114 Is connected to the film thickness measuring device 141 provided in the film thickness measuring device.

The vapor of the organic material 137 discharged from the evaporation source 112 is supplied to the substrate 115 to be deposited and the film thickness sensor 131 And a thin film is grown on the substrate 115 and the film thickness sensor 131. A signal indicating the film thickness detected by the film thickness sensor 131 is outputted to the film thickness measuring device 141, The thickness measuring device 141 obtains the growth rate of the thin film by the inputted film thickness. The signal indicating the obtained growth rate is output to the speed deviation detector 142 as a measurement signal.

The preferable growth rate of the thin film to be grown on the surface of the substrate 115 to be film-formed is determined in advance and converted into the growth rate of the surface of the film thickness sensor 131 and stored in the storage device 143 as a reference value. 143 and outputs the reference signal to the speed deviation detector 142. [

In the velocity deviation detector 142, the magnitude relation and the difference value between the values (positive and negative signs and absolute values) indicated by the input reference signal and the value indicated by the input measurement signal are found, and the absolute value of the sign A deviation signal indicative of a deviation of the deviation is output from the speed deviation detector 142 to the heating power supply 145.

The heating power supply 145 reduces the current to be output to the heating device 134 and supplies the organic material in the evaporation source 112 to the evaporation source 112. In the case where the deviation signal indicates that the growth rate indicated by the measurement signal is faster than the growth rate indicated by the reference signal, The amount of steam generated in the film deposition chamber 137 is reduced to slow the growth rate of the substrate 115 to be deposited and the film thickness sensor 131.

On the other hand, when the growth rate indicated by the measurement signal is lower than the growth rate indicated by the reference signal, the current output to the heating device 134 is increased to increase the amount of steam generated by the organic material 137 in the evaporation source 112, The growth rate of the target substrate 115 and the film thickness sensor 131 is increased.

Thus, by adjusting the value of the current supplied to the heating device 134, the variation of the amount of vapor generated in the organic material 137 is reduced, and the amount of steam generated is maintained at a constant value, and as a result, the growth rate is maintained at the reference value.

The amount of current to be increased and the amount of current to be reduced are proportional to the value of the deviation, and when the absolute value of the deviation is large, the deviation is controlled so as to quickly approach zero.

However, even if the current value supplied from the heating power supply 145 to the heating device 134 is changed, the temperature change of the evaporation vessel 133 is delayed with respect to the change of the current value There is a problem of discarding.

Further, even if the delay of the container temperature is eliminated, there is a problem that the temperature change of the organic material 137 is delayed with respect to the temperature change of the evaporation vessel 133. Particularly, the temperature of the evaporation vessel 133 Is close to the target temperature at which the desired evaporation rate can be obtained, the change of the supplied current value is too large to be stable at the target temperature, and as a result, the evaporation rate fluctuates.

WO 2015/182090

An object of the present invention is to provide an apparatus for producing an organic thin film which is created to solve the disadvantages of the prior art and which can obtain a stable evaporation rate.

According to an aspect of the present invention, there is provided an evaporation apparatus including a vacuum vessel, an evaporation vessel in which an organic material is disposed and heated to discharge the vapor of the organic material into the vacuum vessel, a heating device for heating and supplying heat to the evaporation vessel, And a growth rate controller for controlling the emission of the vapor, wherein the growth rate controller comprises: a calorimetric controller for controlling the amount of heat supplied by the heating device to the evaporation vessel; A growth rate measuring device for measuring the growth rate of the organic thin film to be grown on the object and outputting the measured rate as a measured growth rate; a temperature measuring device for measuring the temperature of the evaporation container and outputting the measured temperature as a measurement temperature; A speed deviation detector for obtaining a speed deviation that is a deviation of the reference speed, And a temperature difference which is a deviation of the input temperature and the measured temperature from the input temperature and a temperature difference between the measured temperature and the measured temperature, Wherein the conversion relationship is set such that the rate of change of the amount of heat to be supplied to the evaporation vessel is changed in accordance with the value of the temperature deviation, Device.

In the present invention, the reference temperature and the change temperature are set in advance in the growth rate controller, and the proportional temperature at which the value obtained by multiplying the speed deviation by the proportional coefficient is added to the reference temperature is obtained by the growth rate controller, The relationship is that the calculated temperature is set to a temperature that is closer to the reference temperature than the proportional temperature when the value of the proportional temperature is closer to the value of the reference temperature than the value of the changed temperature.

Further, the present invention is characterized in that the conversion relation is set such that the calculated temperature is set to be a temperature farther from the reference temperature than the proportional temperature when the value of the proportional temperature is farther from the value of the reference temperature than the value of the changed temperature. to be.

In the present invention, the reference temperature and the change temperature are set in advance in the growth rate controller, and the proportional temperature at which the value obtained by multiplying the speed deviation by the proportional coefficient is added to the reference temperature is obtained by the growth rate controller, The relationship is that the calculated temperature is set to be a temperature that is higher than the reference temperature from the reference temperature when the value of the proportional temperature is higher than the value of the reference temperature.

In the present invention, the heating apparatus is an apparatus for producing an organic thin film which heats the organic material by heating the evaporation vessel with heat supplied to the evaporation vessel to raise the temperature.

Further, according to the present invention, the evaporation vessel is disposed inside the vacuum tank.

The present invention relates to an organic thin film deposition apparatus, which comprises a film thickness sensor which is disposed in the vacuum chamber and through which the vapor is discharged and in which the organic thin film is formed by the vapor, Wherein the film thickness sensor has a shutter which moves between a blocking position between the discharging hole and the film thickness sensor and an arrival position different from the blocking position and when the shutter is located at the blocking position, The steam can reach the object to be filmed but does not reach the film thickness sensor and when the shutter is located at the arrival place, the steam is supplied to the deposition object and the film thickness sensor Thin film manufacturing apparatus.

The present invention is an organic thin film production apparatus in which a period during which the measurement temperature becomes a constant value is set during one cycle in which the shutter is located in the blocking position and the arrival period in which the shutter is located at the arrival position .

The present invention relates to an organic thin film forming apparatus for forming an organic thin film by heating an organic material disposed in the evaporation container to generate vapor from the organic material and reaching the surface of the object to be vapor- Wherein the vapor deposition rate is a growth rate of the organic thin film on the object to be deposited and a measurement temperature which is a temperature of the evaporation vessel is measured to obtain a velocity deviation which is a difference between a preset reference velocity and the measured growth rate, And converting the speed deviation to an output temperature by a conversion relationship that relates the value of the speed deviation to the temperature and changing the amount of heat supplied to the evaporation container so that the measured temperature is close to the calculated temperature , The rate of change of the amount of heat to be supplied to the evaporation vessel is determined by the calculated temperature, An organic thin film manufacturing method according to the value corresponding to the value of the temperature difference between the temperature of the measured temperature of the vaporizing container.

The present invention is characterized in that a reference temperature and a change temperature are set in advance and a proportional temperature which is a temperature obtained by multiplying the speed deviation by a proportional coefficient is added to the reference temperature and a proportional temperature is calculated, And when said temperature is close to a reference temperature, said conversion relation is a step of converting said speed deviation into said calculated temperature which is a temperature closer to said reference temperature than said proportional temperature.

According to the present invention, when the value of the proportional temperature is farther from the reference temperature than the value of the changing temperature, the conversion relation is an organic thin film which converts the speed deviation into the calculated temperature which is a temperature farther from the reference temperature than the proportional temperature Lt; / RTI >

The present invention is characterized in that a reference temperature and a change temperature are set in advance and a proportional temperature which is a temperature obtained by multiplying the speed deviation by a proportional coefficient is added to the reference temperature and a proportional temperature is calculated, And when the temperature is farther than the reference temperature, the conversion relation is an organic thin film production method for converting the speed deviation into the calculated temperature which is a temperature farther from the reference temperature than the proportional temperature.

The present invention is characterized in that the temperature of the evaporation vessel in which the organic material for generating the vapor is disposed is measured to be the measurement temperature and the organic thin film which obtains the measured growth rate from the growth rate of the organic thin film grown on the film thickness sensor Lt; / RTI >

The present invention is a method for producing an organic thin film which changes the rate of change of the amount of heat supplied to the evaporation vessel by changing the rate of change of electric power supplied to a heating apparatus for heating the evaporation vessel and heating the organic material.

The present invention is characterized in that, as a place between the discharge hole through which the vapor is discharged and the film thickness sensor, the vapor can reach the film formation object but can not reach the film thickness sensor, The vapor is provided with a shutter which moves between the object to be film-formed and a position where the object can reach the film thickness sensor, the shutter is placed at the blocking position, the vapor reaches the object to be coated , A blocking period during which the film thickness sensor is not reached and a reaching period in which the shutter is positioned at the arrival position and the vapor reaches both the object to be film-formed and the film thickness sensor are alternately set .

Further, the present invention is a method for manufacturing an organic thin film, wherein a period for setting the measurement temperature to a constant value is set during one cycle including the blocking period and the arrival period adjacent to the blocking period.

According to the present invention, by comparing the measured temperature of the evaporation vessel in which the organic material is heated by heat conduction and the calculated temperature indicating the temperature of the organic material obtained from the measured growth rate, the rate of change of the amount of heat supplied to the evaporation vessel The rate of change of the amount of heat is not too large or too small, and the vapor is stably released from the organic material.

Further, in the control method according to the related art, it is difficult to control the growth rate with respect to a specific material or disturbance, but according to the present invention, control that does not depend on the material or disturbance can be performed.

1 is a block diagram for explaining an organic thin film production apparatus of the present invention.
2 is a graph for explaining the difference between the calculated temperature and the proportional temperature.
3 is a graph showing the relationship between time and measured temperature.
4 is a block diagram for explaining an organic thin film production apparatus of the prior art.
5 is a block diagram for explaining an apparatus for producing an organic thin film for intermittent control;
6 is a graph showing an example of the relationship between the growth rate of the object to be coated and the measured temperature over time in the organic thin film production apparatus.

Reference numeral 10 in Fig. 1 denotes an apparatus for producing an organic thin film of the present invention.

This organic thin film production apparatus 10 has a vacuum tank 13 and an evaporation source 12 is disposed inside the vacuum tank 13.

The evaporation source 12 has a hollow evaporation vessel 33, and an organic material 37 composed of an organic compound on the powdery body is disposed in the hollow portion.

The organic thin film production apparatus 10 has a main controller 30 and a growth rate controller 14. [

The main controller 30 controls the growth rate controller 14 so that the growth rate controller 14 controls the rate of discharge of the vapor discharged from the evaporation vessel 33 into the vacuum chamber 13 Amount).

A heating device 34 is provided in the evaporation source 12. The growth rate controller 14 has a calorie control 16 and the heating device 34 heats the evaporation container 33 when the power is supplied from the heating power source 46 disposed in the calorie controller 16 , And the internal organic material 37 is heated by heat conduction by the evaporation vessel 33 whose temperature has been raised.

Here, the heating device 34 generates heat when energized by the heating power source 46, and heats the evaporation container 33 by the heat h to raise the temperature.

A vacuum evacuation device 28 is connected to the vacuum chamber 13. When the vacuum evacuation device 28 is operated to evacuate the interior of the vacuum chamber 13, a vacuum atmosphere is formed inside the vacuum chamber 13 do.

The inside of the evaporation vessel 33 is evacuated by this vacuum evacuation apparatus 28 or another vacuum evacuation apparatus to form a vacuum atmosphere. When the organic material 37 is heated to a temperature equal to or higher than the evaporation temperature of the organic material 37 (here, the evaporation temperature includes the sublimation temperature) by the heating device 34 in a state of being placed in a vacuum atmosphere, Lt; / RTI >

At this time, if the vacuum atmosphere inside the vacuum chamber 13 is connected to the vacuum atmosphere inside the evaporation vessel 33, the vapor of the organic material 37 generated by the evaporation vessel 33 is discharged from the evaporation vessel 33 And is discharged into the tank (13). In this case, a vapor discharge hole 38 is formed in the ceiling of the evaporation vessel 33, and the evaporation vessel 33 is disposed inside the vacuum vessel 13, so that the vacuum atmosphere inside the vacuum vessel 13, The vapor generated from the organic material 37 is discharged from the inside of the evaporation vessel 33 into the vacuum chamber 13 through the vapor discharge hole 38 because the vacuum atmosphere inside the vessel 33 is connected.

An apparatus in which the object to be formed is disposed is disposed at a film formation position where the vapor emitted from the evaporation vessel 33 in the vacuum chamber 13 reaches or an apparatus for passing an object to be formed is disposed at a film formation position. Here, a substrate holder 39 is provided as an apparatus in which an object to be film-formed is placed at a deposition position where vapor reaches, and the object to be film-formed, indicated by reference numeral 15, is held in the substrate holder 39.

The growth rate controller 14 is connected to a film thickness sensor 31 for measuring the film thickness of the thin film formed on the surface.

The film thickness sensor 31 does not block the arrival of the vapor to the object 15 in the vacuum chamber 13 so that the vapor emitted from the vapor release hole 38 reaches the film thickness sensor 31 As shown in FIG. Therefore, the vapor discharged from the same vapor releasing source (here, the vaporizing container 33) disposed in the vacuum chamber reaches the film forming object 15 and the film thickness sensor 31.

A shutter 35 is provided inside the vacuum chamber 13.

The shutter 35 is connected to the motor 36 and the motor 36 is controlled by the motor control device 51. [

The motor control device 51 is connected to the main control device 30. When the main control device 30 operates the motor 36 by the motor control device 51, Can be moved in the vacuum chamber 13 to change its position. In this example, the shutter 35 is moved from the blocking position between the film thickness sensor 31 and the vapor releasing hole 38, and also from the blocking position so as to be located at a position different from the blocking position.

The vapor discharged from the vapor discharge hole 38 does not reach the film thickness sensor 31 even if the vapor reaches the object 15 to be filmed so that the object to be film- Even if the thin film is grown, the organic thin film is not grown in the film thickness sensor 31.

On the other hand, the vapor discharged from the vapor discharge hole 38 reaches both the object to be film-formed 15 and the film thickness sensor 31, and the object 15 to be film- The organic thin film grows on both the surface of the film thickness sensor 31 and the surface of the film thickness sensor 31. The position of the shutter 35 where the organic thin film grows on both the surface of the film formation object 15 and the surface of the film thickness sensor 31 is referred to as a "

When the vapor emitted from the vapor discharge hole 38 reaches the film formation object 15 and the film thickness sensor 31, the growth rate of the organic thin film formed on the film thickness sensor 31 (the 'growth rate' The growth rate of the organic thin film formed on the object 15 to be formed is proportional to the growth rate of the organic thin film 15 and the value of the proportional constant is calculated from the previously measured film thickness measurement value and the measurement time. When the shutter 35 is moving from the blocking position, the film thickness and the growth rate of the organic thin film formed on the object 15 to be formed can be calculated from the film thickness and the growth rate of the organic thin film formed on the film thickness sensor 31 have. In the following description, it is assumed that the shutter 35 is not located at the blocking position.

The growth rate controller 14 has a film thickness measuring device 41 and the film thickness sensor 31 is connected to the film thickness measuring device 41. [

The film thickness sensor 31 outputs a signal corresponding to the film thickness of the attached organic thin film to the film thickness measuring device 41. The film thickness measuring device 41 measures a film thickness And the signal indicating the value is output as the growth rate of the film thickness sensor 31. The film thickness measuring device 41 measures the growth rate of the film on the substrate 31, The speed is obtained.

Therefore, the growth rate measuring device for measuring the growth rate on the object 15 to be deposited and outputting the measured value as the measured growth rate is constituted by the film thickness sensor 31 and the film thickness measuring device 41. Reference numeral 40 in Fig. 1 denotes a growth rate measuring instrument.

The growth rate controller 14 has a temperature calculator 17. The temperature calculator 17 has a speed deviation detector 42 and a signal indicative of the measured growth rate is input to the speed deviation detector 42. [

A reference speed indicating a reference value of the growth rate of the object 15 to be film-formed is set in advance in the speed deviation detector 42, for example, the storage device 49. The speed variation detector 42 detects the measured growth rate and the reference speed (Here, the value of the 'deviation' is made up of a sign indicating an absolute value and a positive or negative sign) is obtained, and a signal indicating the obtained speed deviation is output. As for the reference speed, the temperature calculator 17 is provided with a storage device 49, and the reference speed is stored in the storage device 49 and outputted from the storage device 49 to the speed deviation detector 42. [

When a signal indicating the growth rate of the film thickness sensor 31 is input from the film thickness measuring device 41 to the speed deviation detector 42, the reference value of the growth rate of the film thickness sensor 31 is set as a reference speed, (42).

The temperature calculator 17 has a converter 44 and the growth rate controller 14 also has a calorimeter controller 16.

The signal indicative of the speed deviation is output to the converter 44.

The relationship between the speed deviation and the organic material temperature is determined in advance and is set in the converter 44 as a conversion relationship for converting the speed deviation into the calculated temperature indicating the temperature of the organic material 37. [

The converter 44 converts the speed deviation indicated by the input signal into an output temperature indicative of the temperature of the organic material 37 in accordance with the conversion relationship and outputs a signal indicative of the output temperature to the calorimeter controller 16. [ Since the calculated temperature is obtained from the measured growth rate, the calculated temperature represents the temperature of the organic material.

A temperature deviation detector 45 is provided in the calorific value controller 16 and a signal indicative of the calculated temperature is inputted to the temperature deviation detector 45. [

A temperature measuring instrument 32 is provided in the evaporation vessel 33. The temperature of the evaporation vessel 33 is measured by the temperature measuring instrument 32 and a signal indicating the measured temperature is outputted from the temperature measuring instrument 32 to the calorie controller 16. [ And a signal indicative of the measured temperature is input to the temperature deviation detector 45. [ The temperature deviation detector 45 calculates a difference between the input calculated temperature and the measured temperature and a temperature deviation made by a positive sign indicating a magnitude relationship between the calculated temperature and the measured temperature. Here, the temperature meter 32 is a thermocouple.

The calorific value controller 16 supplies electric power to the heating device 34 to raise the temperature of the organic material 37 by supplying heat from the heating device 34 to the organic material 37, The heating device 34 supplies the organic material 37 with the growth rate of the organic thin film formed on the object 15 to be formed becomes the reference speed by increasing or decreasing the electric power supplied to the heating device 34 And the rate of change of the amount of heat (the rate of change means the amount of heat supplied / time) is controlled.

For example, when the amount of heat supplied by the heating device 34 is increasing or decreasing to a constant change rate Q ₁ (cal / sec), the rate of change Q ₂ ; is changed to the cal / sec) (Q ≠ Q _2).

Here, the signal indicating the temperature deviation is input to the heating power source 46, and based on the value of the temperature deviation and the magnitude relationship between the calculated temperature and the measured temperature, the heating device 46 (= Amount of change in supplied power / time) is changed. The rate of change of the amount of heat supplied to the organic material 37 by the heating device 34 is changed by changing the rate of change of the electric power supply amount.

As described above, in the present invention, the calculated temperature calculated by the converter 44 and the measured temperature measured by the temperature measuring device 32 are compared in the calorie controller 16 and supplied to the heating device 34 in accordance with the obtained temperature deviation Since the rate of change of power is changing and the calculated temperature changes to a value corresponding to the value of the measured growth rate, the calorific value controller 16 sets the calculated temperature at which the value changes to be a variable comparison target temperature, Which is the difference between the measured temperature and the measured temperature.

It is also possible to change the rate of change of the supplied heat quantity by the speed deviation instead of the control based on the temperature deviation.

First, the reference velocity inputted to the velocity deviation detector 42 is set to a predetermined value when the organic material 37 in the evaporation vessel 33 is at the reference temperature, which is an ideal temperature at which the organic material 37 evaporates at a desired evaporation rate. Is the growth rate of the organic thin film grown on the surface of the substrate (15).

Therefore, when the measured growth rate output from the growth rate measurer 40 is equal to the reference speed, a speed deviation indicative of a value of zero is output from the speed deviation detector 42. In the converter 44, And is input to the calorific value controller 16. The calorimetric value of the calorimeter 16 is the same as the calorific value.

Assuming that the temperature of the evaporation vessel 33 is equal to the temperature of the organic material 37 in the evaporation vessel 33, when the value of the velocity deviation is zero, the temperature of the evaporation vessel 33 is also the reference temperature, The reference temperature is obtained, and the temperature deviation between the calculated temperature and the measured temperature becomes zero.

Alternatively, when the temperature of the evaporation vessel 33 and the temperature of the organic material 37 in the evaporation vessel 33 are not the same, even when the value of the velocity deviation is zero, the temperature difference between the calculated temperature and the measured temperature Is not zero. When the measured temperature is higher than the calculated temperature, the rate of change of the calorie is changed so that the measured temperature is lowered. When the measured temperature is lower than the calculated temperature, the rate of change of the calorie is changed so that the measured temperature rises.

As described above, the heating power source 46 changes the power supplied to the heating device 34 at the rate of change corresponding to the sign and magnitude of the temperature deviation. When the magnitude of the temperature deviation is zero, the rate of change becomes zero, The magnitude of the supplied power is maintained unchanged.

Each deviation is made up of a sign and an absolute value. With respect to the speed deviation, the sign indicates which of the measured growth rate and the reference speed is larger.

When the speed deviation indicates that the measured growth rate is greater than the reference speed, the conversion relationship set in the converter 44 is set so as to convert the speed deviation to a calculated temperature at which the rate of change of the amount of heat supplied by the heating device 34 is reduced .

When the speed deviation indicates that the measured growth rate is smaller than the reference speed, the conversion relationship is set so as to convert the speed deviation to a calculated temperature at which the rate of change of the amount of heat supplied by the heating device 34 is increased. As a result, the temperature change becomes large.

More specifically, when the change temperature is set in advance in the growth rate controller 14, and a value obtained by multiplying the speed deviation by a proportional coefficient set in advance to the reference temperature is a proportional temperature, When the proportional temperature calculated from the speed deviation is closer to the reference temperature than the set change temperature, the calculated temperature for converting the inputted speed deviation is set to be a temperature close to the reference temperature than the proportional temperature calculated from the speed deviation. As a result, the temperature change becomes small.

When the proportional temperature calculated from the inputted speed deviation is equal to the set change temperature, the calculated temperature becomes the reference temperature.

The proportional temperature higher than the reference temperature is compared with the change temperature higher than the reference temperature, and the proportional temperature at a temperature lower than the reference temperature is compared with the reference temperature Is compared with the change temperature lower than the temperature.

Further, the conversion relation is set such that, when the proportional temperature calculated from the input speed deviation is a temperature farther from the reference temperature than the set temperature, the calculated temperature for converting the input speed deviation is set to be higher than the proportional temperature calculated from the speed deviation, As shown in Fig.

This relationship is shown in the graph of Fig. The abscissa of the graph in Fig. 2 represents the speed deviation, and the value of the origin of the abscissa represents the proportional temperature and the calculated temperature when the speed deviation is zero, that is, the reference temperature. Therefore, the vertical axis represents the difference between the proportional temperature and the reference temperature or the temperature which is the difference between the changing temperature and the reference temperature.

The graph of Fig. 2 shows the case where the velocity deviation is a value obtained by subtracting the measured growth rate from the reference velocity, and also an absolute value with positive and negative signs (velocity deviation = reference velocity - measured growth rate). In FIG. 2, reference character S denotes a curve representing the relationship between the speed deviation and the temperature obtained by subtracting the reference temperature from the proportional temperature obtained from the speed deviation, and H is a straight line indicating the relationship of the speed deviation.

T ₁ is the temperature of the difference between the change temperature on the higher temperature side and the reference temperature, and T ₂ is the temperature difference between the change temperature on the lower temperature side and the reference temperature. Symbols E ₁ and E ₂ are the velocity deviations that give the change temperature of the same value, and the curve S and the straight line H are the points (E ₁ , T ₁ ) and Intersect at points (E ₂ , T ₂ ).

The range of the vertical axis where the calculated proportional temperature is closer to the origin (reference temperature) than the change temperature is the temperature range nearer the origin than the temperatures T ₁ and T ₂ , and the speed deviation providing the temperature range is the speed deviation E ₁ and E ₂ , respectively. When the difference between the calculated temperature and the reference temperature and the difference between the proportional temperature and the reference temperature are obtained from the same speed deviation in the range of the range deviation, the calculated temperature is closer to the origin than the proportional temperature.

Therefore, when the temperature of the organic material 37 is closer to the reference temperature than the change temperature, the change in the amount of heat supplied to the heating device 34 becomes smaller than that in the case where the change in the amount of heat is proportional to the speed deviation. ) Does not change beyond the temperature at which the speed deviation becomes zero.

The range of the vertical axis where the calculated proportional temperature is separated from the reference temperature (reference temperature) from the change temperature is the temperature range farther from the origin than the temperatures T ₁ and T ₂ , and the speed deviation providing the temperature range is the speed It is farther from the origin than the deviations E ₁ and E ₂ . When the difference between the calculated temperature and the reference temperature and the difference between the proportional temperature and the reference temperature are obtained from the same speed deviation in the range, the calculated temperature is farther from the origin than the proportional temperature.

Therefore, when the temperature of the organic material 37 is far from the reference temperature, the amount of change in the amount of heat supplied to the heating device 34 becomes larger than in the case where the amount of change in the amount of heat is proportional to the speed deviation, The temperature of the organic material 37 is quickly stabilized.

The graph of FIG. 3 (a) shows a case where the measured temperature is close to the reference temperature in a state where the measured temperature is lower than the reference temperature. In the graph of FIG. 3 (b), the measured temperature is close to the reference temperature And the curve showing the relationship between the time and the measured temperature finally coincides with a straight line indicating the reference temperature.

In the present embodiment, the signal indicative of the measured growth rate output from the growth rate measuring instrument 40 is input to the speed deviation detector 42 in the temperature calculator 17 by removing the high frequency component from the filter 48 , So that the value of the speed deviation does not fluctuate unnecessarily.

In the present invention, the power output from the heating power source 46 may be intermittently controlled, or the growth rate on the film thickness sensor 31 may be measured at predetermined time intervals to output the measured growth rate. In this case, since the organic thin film does not need to grow on the surface of the film thickness sensor 31 for the time when the growth rate is not measured, the time for which the growth rate is not measured is determined by placing the shutter 35 at the blocking position, Since the thin film is grown on the film thickness sensor 31 by moving from the blocking position, the time for the organic film to grow in the film thickness sensor 31 is shortened, so that the lifetime of the film thickness sensor 31 is prolonged.

The organic thin film production apparatus 10A is an apparatus in which the organic thin film production apparatus 10 shown in Fig. 1 is provided with an open / close controller 43, When the shutter 35 is opened and closed while vapor is reaching the film formation object 15 and steam is not supplied to the film thickness sensor 31 when the film is in the closed state and steam reaches the film thickness sensor 31 when the film is in the open state So that the time when the vapor reaches the film thickness sensor 31 is shorter than the film formation object 15 positioned in the same vacuum chamber 13.

The storage device 49 stores the time of the arrival time at which the shutter 35 is opened and the time of the shutoff period at which the shutter 35 is closed and is output to the open / close controller 43 as the set time, A control signal is outputted to the motor control device 51 through the main control device 30 to control the opening and closing of the shutter 35. [

During the reaching period, the shutter 35 is opened. When the vapor reaches and the organic thin film is grown on the surface of the film thickness sensor 31, the thickness of the film thickness sensor 31 is calculated from the film thickness of the film formed during the arrival time and the arrival time, The measured growth rate of the film formation object 15 can be obtained.

The obtained measured growth rate is compared with the reference speed to obtain the speed deviation and the calculated temperature, and the temperature deviation is output to the heating power source 46 to change the power supplied to the heating device 34.

Thus, the power supplied to the heating device 34 is changed during the arrival period, and the changed value is maintained during the shutdown period.

On the surface of the film thickness sensor 31, the growth of the thin film is started at the start time of the arrival time, and the growth of the thin film is stopped at the end time of the arrival time.

The measurement growth rate may be measured between the start time and the end time of one arrival period or may be averaged to obtain the measured growth rate.

Here, the organic thin film production apparatus 10A calculates the measured growth rate at the end time of the arrival period by the amount of film thickness increase during the arrival period, and stores the value of the measured growth rate input to the growth rate controller 14 in the arrival period It is assumed that it is configured to change every end time.

The graph of FIG. 6 shows an example of the relationship between the growth rate of the object to be film-formed on the organic thin film production apparatus 10A and the elapsed time of the measurement temperature.

In the graph of FIG. 6, the arrival period and the next blocking period adjacent to the arrival period are set to one cycle. For example, the measurement of the film thickness is started at the first time (t ₁ ) (T ₂ ), which is the end time of the arrival period, and the measurement growth rate is obtained from the grown film thickness and the measurement time, and the value of the measured growth rate is obtained at the second time t ₂ , The temperature is output to the temperature calculator 17, and compared with the reference speed, the speed deviation and the calculated temperature are obtained in this order, and the calculated temperature is compared with the measured temperature to obtain the temperature deviation.

The magnitude of the rate of change of the electric power supplied to the heating device 34 at the second time t ₂ at which the measured growth rate is obtained is changed in order to supply electric power of a magnitude corresponding to the temperature deviation to the heating device 34 do.

Here, assuming that the measured growth rate obtained at the second time (t ₂ ) is smaller than the reference speed (reference speed for the object to be film-formed), the value of the calculated temperature increases at the second time (t ₂ ) Since the temperature is lower than the calculated temperature, the supply power increases and the measured temperature rises.

Since the same amount of power is supplied to the heating device 34 until the fourth time t ₄ at which the measured growth rate is obtained in the next one cycle, the measured temperature is maintained at a constant value after a certain period of time has elapsed. That is, during the cut-off period, a maintenance period in which the temperature rise is stopped and the measured temperature is maintained at a constant value is set, and the predetermined time before the third time (t ₃ ) t ₅₎ is started at a predetermined time before the sustain period.

Thereafter, in the arrival period from the third time t3 to the fourth time t4 at which the next one cycle starts, the measured temperature is maintained at the value held at the end of the preceding one cycle.

On the other hand, since the temperature change of the organic material is retarded with respect to the temperature change of the evaporation vessel, the measured growth rate continues to increase even if the measurement temperature is maintained at a certain value.

For this reason, the fourth time (t ₄₎ measuring the growth rate becomes larger than the reference speed, the previous one cycle on the contrary, reduces the power supplied to the heating device 34 and the measured temperature is reduced to obtain in.

As described above, the measurement temperature is changed only for a certain period of time (here, the period excluding the holding period in the blocking period) and maintained at a constant temperature for another period of time. Therefore, when the measured growth rate is obtained in the next cycle, So that the difference between the growth rate and the reference speed is reduced.

In each of the above embodiments, the evaporation vessel 33 is disposed inside the vacuum chamber 13, but it may be disposed outside the vacuum chamber 13.

In the above embodiment, the resistance heating heater is used as the heating device 34, and the evaporation container 33 is heated by the heat conduction. Further, the organic material 37 is heated by the evaporation container 33 heated by the heat conduction The temperature of the organic material 37 is controlled by controlling the amount of heat generated by the heating device 34. The infrared lamp may be used as the heating device 34 to heat the evaporation container 33 by thermal radiation, , And the induction current may be flowed into the evaporation vessel 33 to heat the evaporation vessel 33 directly.

In the above description, the term 'evaporation rate' means a discharge amount per unit time of the steam, which does not mean the flying speed of the steam.

10 Organic thin film production equipment
13 Vacuum tank
14 Growth rate controller
15 Film formation object
16 calorimeter controller
17 Temperature Calculator
31 Thickness sensor
32 Temperature Meter
33 Evaporation vessels
35 Shutter
37 Organic materials
40 Growth Rate Meter
41 Thickness Meter
42 Speed deviation detector
44 converter
45 Temperature deviation detector
46 Heating power
49 Memory

Claims (16)

Vacuum chamber;
An evaporation vessel in which an organic material is disposed and heated to discharge the vapor of the organic material in the vacuum chamber;
A heating device for heating and supplying heat to the evaporation vessel; And
A growth rate controller for controlling the emission of the vapor;
Lt; / RTI &
The growth rate controller
A calorie controller for controlling the amount of heat supplied by the heating device to the evaporation vessel;
A growth rate meter for measuring the growth rate of the organic thin film grown on the object to be vaporized by the vapor of the organic material emitted from the evaporation vessel and outputting the measured rate as a measured growth rate;
A temperature measuring unit for measuring the temperature of the evaporation vessel and outputting the measured temperature as a measurement temperature;
A velocity deviation detector for obtaining a velocity deviation which is a deviation of the input measured growth rate and a preset reference velocity;
A converter having a conversion relation for converting the speed deviation into a calculation temperature indicating a temperature of the organic material; And
A temperature deviation which is a deviation between the calculated output temperature and the measured temperature is calculated and a temperature deviation which changes the amount of heat supplied from the heating device to the evaporation container so that the measured temperature approaches the calculated temperature, Detector;
Lt; / RTI >
Wherein the conversion relation is configured to change the rate of change of the amount of heat to be supplied to the evaporation vessel according to the value of the temperature deviation. The method according to claim 1,
The reference temperature and the change temperature are set in advance in the growth rate controller,
A proportional temperature at which a value obtained by multiplying the speed deviation by a proportional coefficient is added to the reference temperature is obtained by the growth rate controller,
Wherein the conversion relation is set so that the calculated temperature is closer to the reference temperature than the proportional temperature when the value of the proportional temperature is closer to the value of the reference temperature than the value of the changed temperature. 3. The method of claim 2,
Wherein the conversion relation is set so that the calculated temperature is higher than the reference temperature when the value of the proportional temperature is higher than the reference temperature. The method according to claim 1,
The reference temperature and the change temperature are set in advance in the growth rate controller,
A proportional temperature at which a value obtained by multiplying the speed deviation by a proportional coefficient is added to the reference temperature is obtained by the growth rate controller,
Wherein the conversion relation is set so that the calculated temperature is higher than the reference temperature when the value of the proportional temperature is higher than the reference temperature. The method according to claim 1,
Wherein the heating apparatus heats the organic material by heating the evaporation vessel with heat supplied to the evaporation vessel to raise the temperature. The method according to claim 1,
Wherein the evaporation vessel is disposed inside the vacuum chamber. 7. The method according to any one of claims 1 to 6,
A discharge hole disposed in the vacuum chamber to discharge the vapor,
And a film thickness sensor for forming the organic thin film by the vapor,
An organic thin film production apparatus in which the measured growth rate is obtained from a film thickness of the organic thin film on the film thickness sensor,
And a shutter that moves between a blocking position between the release hole and the film thickness sensor and an arrival position different from the blocking position,
When the shutter is located at the blocking position, the vapor can reach the object to be formed, but does not reach the film thickness sensor, and when the shutter is located at the arrival place, So that the film thickness sensor can reach all of the film thickness sensors. 8. The method of claim 7,
Wherein a period during which the measured temperature becomes a constant value is set during one cycle including a blocking period in which the shutter is located in the blocking position and a reaching period in which the shutter is located in the arrival place. A method for manufacturing an organic thin film, wherein an evaporated container heated and supplied with heat generates an evaporative material from the organic material by heating an organic material disposed in the evaporation container, and reaches the surface of the object to be coated to form an organic thin film,
A measured growth rate which is a growth rate of the organic thin film on the object to be film-formed and a measurement temperature which is a temperature of the evaporation vessel are measured,
Which is a difference between a preset reference speed and the measured growth rate measured,
The speed deviation is converted to the calculated temperature by a conversion relation relating the value of the speed deviation to the temperature,
And changing the amount of heat to be supplied to the evaporation vessel so that the measured temperature is close to the calculated temperature,
Wherein the rate of change of the amount of heat to be supplied to the evaporation vessel is set to a value corresponding to a value of a temperature deviation between the calculated temperature and a measured temperature which is the measured temperature of the evaporation vessel. 10. The method of claim 9,
The reference temperature and the changing temperature are set in advance,
A proportional temperature which is a temperature obtained by multiplying the speed deviation by a proportional coefficient plus the reference temperature is calculated,
Wherein the conversion relationship converts the speed deviation into the calculated temperature that is closer to the reference temperature than the proportional temperature when the value of the proportional temperature is closer to the reference temperature than the value of the temperature change. Gt; 11. The method of claim 10,
Wherein the conversion relationship converts the speed deviation to the calculated temperature which is a temperature farther from the reference temperature than the proportional temperature when the value of the proportional temperature is farther from the reference temperature than the value of the change temperature. Gt; 10. The method of claim 9,
The reference temperature and the changing temperature are set in advance,
A proportional temperature which is a temperature obtained by multiplying the speed deviation by a proportional coefficient plus the reference temperature is calculated,
Wherein the conversion relationship converts the speed deviation to the calculated temperature which is a temperature farther from the reference temperature than the proportional temperature when the value of the proportional temperature is farther from the reference temperature than the value of the change temperature. Gt; 13. The method according to any one of claims 9 to 12,
The temperature of the evaporation vessel in which the organic material generating the vapor is disposed is measured to obtain the measurement temperature,
Wherein the measured growth rate is obtained from the growth rate of the organic thin film growing on the film thickness sensor. 13. The method according to any one of claims 9 to 12,
Wherein the rate of change of the amount of heat supplied to the evaporation vessel is changed by changing the rate of change of electric power supplied to the heating device for heating the evaporation vessel to heat the organic material. 13. The method according to any one of claims 9 to 12,
Wherein the steam is a place between the discharge hole through which the steam is discharged and the film thickness sensor, the steam can reach the film formation object but can not reach the film thickness sensor, Wherein said steam is provided with a shutter which moves between said object to be film-formed and a reaching position where it can reach said film thickness sensor,
A blocking period in which the shutter is positioned at the blocking position and the vapor reaches the film formation object and does not reach the film thickness sensor;
Wherein the shutter is positioned at the arrival position and a reaching period for reaching the vapor to both the object to be film-formed and the film thickness sensor is alternately set. 16. The method of claim 15,
Wherein a period for setting the measurement temperature to a constant value is set during one cycle of the blocking period and the arrival period adjacent to the blocking period.

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